WO2005112516A1 - Organic el device - Google Patents

Organic el device Download PDF

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Publication number
WO2005112516A1
WO2005112516A1 PCT/JP2005/008682 JP2005008682W WO2005112516A1 WO 2005112516 A1 WO2005112516 A1 WO 2005112516A1 JP 2005008682 W JP2005008682 W JP 2005008682W WO 2005112516 A1 WO2005112516 A1 WO 2005112516A1
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WO
WIPO (PCT)
Prior art keywords
organic
layer
substrate
water
electrode film
Prior art date
Application number
PCT/JP2005/008682
Other languages
French (fr)
Japanese (ja)
Inventor
Toshio Negishi
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Publication of WO2005112516A1 publication Critical patent/WO2005112516A1/en

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/874Passivation; Containers; Encapsulations including getter material or desiccant
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission

Definitions

  • the present invention relates to the field of organic EL devices.
  • a cap is provided on the back side of the substrate to seal the organic layer.
  • a desiccant is attached inside the cap to absorb moisture.
  • the light emitted from the organic layer is absorbed by the TFT, so that the display area is reduced and the brightness of the device may be reduced.
  • the cap on the back surface needs to be formed of a transparent substrate.
  • the inside of the cap is wide like the bottom emission type! (4) If a desiccant is set in the range, light is absorbed by the desiccant, so that the desiccant cannot be sufficiently set. Insufficient waterproof performance may shorten the life of the device compared to the bottom emission type.
  • Patent Document 1 JP-A-2000-173766
  • Patent Document 2 JP 2003-142254 A
  • the present invention has been made in order to solve the above-mentioned disadvantages of the related art, and an object thereof is to provide a top emission type organic EL device having high luminance and a long life. is there.
  • the present invention provides a substrate, an active region disposed on the substrate, on which an electric element and a lower electrode film are formed, and an organic region disposed on the active region.
  • a transparent electrode film disposed on the organic layer and when the electric element is turned on, a current flows through the organic layer located between the lower electrode film and the transparent electrode film.
  • An organic EL device configured to emit light in the portion of the organic layer where the current flows, wherein a water-absorbing layer mainly composed of a transparent water-absorbing substance is disposed on the transparent electrode film; The light emitted from the organic layer is transmitted through the transparent electrode film and the water-absorbing layer and emitted to the outside.
  • the present invention is an organic EL device, wherein the water-absorbing layer contains a water-absorbing substance that also has MgO power.
  • the present invention is an organic EL device, wherein the water absorbing layer is an organic EL device formed by sputtering.
  • the present invention is an organic EL device, wherein the water absorbing layer has a thickness of 5 nm or more and 20 nm or less.
  • the present invention is an organic EL device, wherein a transparent sealing layer is disposed on the water absorbing layer, and the water absorbing layer and the organic layer are surrounded by the sealing layer and the substrate. It is.
  • the present invention is the organic EL device, wherein the sealing layer contains one or both of silicon nitride and silicon nitride.
  • the present invention is an organic EL device, wherein a transparent container is disposed on the sealing layer, and the sealing layer, the water absorbing layer, and the organic layer are surrounded by the container and the substrate.
  • Tayu Machine EL device is an organic EL device, wherein a transparent container is disposed on the sealing layer, and the sealing layer, the water absorbing layer, and the organic layer are surrounded by the container and the substrate.
  • the present invention is an organic EL device, wherein a desiccant is disposed between the container and the substrate and at a position outside the active region.
  • the water-absorbing layer is made transparent, and light emitted from the organic layer is not absorbed by the water-absorbing layer but passes through, so that the water-absorbing layer can also be formed in the display range. Therefore, it is possible to arrange the water absorbing layer over a wide range without being restricted by the place where the water absorbing layer is provided unlike the conventional organic EL device, and the water entering the device is absorbed by the water absorbing layer. The layers are not degraded by moisture and the life of the device is extended. As described above, according to the present invention, even the top emission type has a sufficient water absorbing ability and high waterproofness! (4) An organic EL display device can be provided.
  • FIG. 1 (a) to (g): cross-sectional views illustrating an example of a process for manufacturing the organic EL device of the present invention
  • FIG. 2 cross-sectional views illustrating a cap
  • FIG. 3 is an enlarged sectional view of the organic EL device of the present invention.
  • reference numeral 11 denotes a substrate, and an electric element and a lower electrode film, which will be described later, are formed on one surface of the substrate 11.
  • Reference numeral 20 in FIG. 1A indicates an active region in which an electric element and a lower electrode film are formed.
  • Reference numeral 9 in FIG. 1 (a) indicates a mask used for forming an organic layer described later. As shown in FIG. L (a), the opening of the mask 9 is located on the active area 20. Then, the mask 9 is arranged on the substrate 11 so that the edge of the substrate 11 is covered with the mask 9. In that state, mask the substrate 11 9 Together with the inside of a first film forming apparatus (here, a vapor deposition apparatus).
  • a first film forming apparatus here, a vapor deposition apparatus
  • a vacuum atmosphere is previously formed inside the first film forming apparatus, and while maintaining the vacuum atmosphere, the organic material disposed inside the first film forming apparatus is heated, and the organic material is heated. Generates steam.
  • the substrate 11 is transported together with the mask 9 from the first film forming apparatus to a second film forming apparatus (here, a sputtering apparatus).
  • a second film forming apparatus here, a sputtering apparatus.
  • a vacuum atmosphere is previously formed inside the second film forming apparatus, and a target made of a transparent conductive material is arranged in the vacuum atmosphere.
  • the target When a ground potential is applied to the substrate 11 and a negative voltage is applied to the target while maintaining a vacuum atmosphere inside the second film forming apparatus, the target is sputtered and sputtered particles are emitted from the target.
  • the substrate 11 has the surface on the side where the mask 9 is disposed facing the target, and among the sputter particles emitted from the target, the sputter particles that have passed through the opening of the mask 9 are organic layers.
  • the transparent conductive material film grows on the surface of the substrate 12 (FIG. 1 (c)).
  • the substrate 11 is carried together with the mask 9 from the second film forming apparatus to a third film forming apparatus (here, a vapor deposition apparatus).
  • a vacuum atmosphere is previously formed inside the third film forming apparatus, and a transparent water absorbing material (here, MgO) placed inside the third film forming apparatus is maintained while maintaining the vacuum atmosphere. Is heated to generate vapor of the water absorbing material.
  • a transparent water absorbing material here, MgO
  • the surface of the substrate 11 on which the mask 9 is disposed faces the water-absorbing material, and the vapor of the water-absorbing material passing through the opening reaches the surface of the transparent electrode film 15, A layer of water-absorbing material (water-absorbing layer 17) grows on the surface (Fig. 1 (d)).
  • the substrate 11 is also carried out by the third film forming apparatus, and the mask 9 is removed from the substrate 11.
  • a vacuum atmosphere is previously formed inside the fourth film forming apparatus by vacuum evacuation, and while the vacuum evacuation is continued, the first raw material gas containing silicon is contained inside the fourth film forming apparatus (
  • SiH gas SiH gas
  • O gas oxygen and nitrogen
  • H gas is supplied together to form a film formation atmosphere at a predetermined pressure.
  • Electrodes are arranged inside the fourth film forming apparatus.
  • a ground potential and a negative voltage are applied to the substrate 11 and the electrode while maintaining the film forming atmosphere, the first and second source gases are applied. Is generated, and an insulating film is formed on the surface of the substrate 11 as a reactant (silicon oxynitride, SiON) of the first and second source gases.
  • a transparent insulating film grows on 1.
  • the substrate 11 is unloaded from the fourth film forming apparatus.
  • FIG. 1E shows a state immediately after the insulating film 18 ′ having a predetermined thickness is formed.
  • the insulating film 18 ′ is formed on the surface and side surfaces of the water absorbing layer 17 and the transparent electrode film 15. Side, the side of the organic layer 12, the periphery of the active region 20, and the portion of the surface of the substrate 11 outside the active region 20 in a continuous manner.
  • FIG. 1 (f) shows a state after the etching, and reference numeral 18 in the same figure denotes a sealing layer made of the insulating film 18 ′ remaining without being etched.
  • the sealing layer 18 is formed so as to continuously cover the periphery of the active region 20, the side surface of the organic layer 12, the side surface of the transparent electrode film 15, and the side surface and surface of the water absorbing layer 17,
  • the organic layer 12, the transparent electrode film 15, and the water absorbing layer 17 are surrounded by the sealing layer 18 and the substrate 11, and are shielded from the outside.
  • Reference numeral 30 in FIG. 2 indicates a transparent container-shaped cap, and a plurality of ring-shaped grooves 37 to 39 are formed at an edge of the container opening of the cap.
  • the center of the ring of each groove 37-39 coincides with the center of the opening of the cap 30, and the inner diameter of each groove 37-39 is larger than the diameter of the opening of the cap 30. Therefore, the opening of the cap 30 is surrounded by the grooves 37-39.
  • a ring-shaped adhesive resin 31 is arranged at least in the groove 37 located at the outermost periphery, and the groove 3 located inside the groove 37 located at the outermost periphery.
  • a ring-shaped desiccant 32 is placed on 8, 39 (Fig. 2).
  • the adhesive resin 31 and the desiccant 32 Since the thickness of the ring of the adhesive resin 31 and the desiccant 32 is made larger than the depth of the grooves 37 to 39, the adhesive resin 31 and the desiccant 32 also reduce the surface force of the edge portion of the cap 30. It is protruding.
  • the inner diameter of the opening of the cap 30 is larger than the diameter of the sealing layer 18 described above, and the opening of the cap 30 faces the surface of the substrate 11 on the side where the sealing layer 18 is arranged.
  • the sealing layer 18 is covered with the cap 30 and the adhesive resin 31 is formed.
  • the desiccant 32 adheres to a portion of the substrate 11 outside the region where the sealing layer 18 is formed.
  • the adhesive resin 31 contains an ultraviolet curable resin, and when the adhesive resin 31 is irradiated with ultraviolet light, the adhesive resin 31 is located outside the sealing layer 18 of the substrate 11. It cures in a state where it is in close contact with both the part and the cap 30.
  • Reference numeral 10 in FIG. 1G indicates the organic EL device in a state where the adhesive resin 31 is cured.
  • the adhesive resin 31 is cured in a state in which both the portion of the substrate 11 outside the sealing layer 18 and the cap 30 are in close contact with each other. It is surrounded by the cap 30 and the hardened adhesive resin 31.
  • the adhesive resin 31 is made of a resin having high waterproofness after curing, such as an acrylic resin. Further, the cap 30 is made of a highly waterproof substance such as glass, and the substrate 11 is also made of a highly waterproof substance such as a glass plate, so that the cured adhesive resin 31 and the cap 30 are used. It is difficult for the moisture of the external atmosphere to enter the space surrounded by the substrate 11 and the moisture of the external atmosphere, even if the moisture of the external atmosphere passes through the adhesive resin 31 and enters the space. Absorbed by a desiccant 32 located inside the 31 ring.
  • FIG. 3 shows an enlarged cross-sectional view of the organic EL device 10.
  • a plurality of lower electrode films 21 are arranged in a row in the active region 20, and at least one electric element (here, a transistor 25) is arranged near each lower electrode film 21! You.
  • each transistor 25 has a gate electrode 22, a source electrode 23, a drain electrode 27, and a semiconductor layer 26, respectively.
  • the gate electrode 22 is covered with the insulating thin film 24, the semiconductor layer 26 is disposed in close contact with the surface of the insulating thin film 24, and the source electrode 23 and the drain electrode 27 are in close contact with the semiconductor layer 26 while being separated from each other.
  • a source line and a gate line extend in the active region 20 while being insulated from each other.
  • the source line is connected to a power supply circuit, and the gate line is connected to a control circuit.
  • the source wiring is connected to the source electrode 23, the gate wiring is connected to the gate electrode 22, the voltage of the power supply circuit is applied to the source electrode 23, and the voltage from the control circuit is applied to the gate electrode 22. It's like that.
  • a transistor 25 to be turned on is selected, and a source line and a gate line are connected so that a voltage is applied to the source electrode 23 and the gate electrode 22 of the selected transistor 25.
  • a voltage is applied to the transistor 25, the resistance value of the semiconductor layer 26 of the selected transistor 25 decreases, the source electrode 23 and the drain electrode 27 are electrically connected, and the transistor 25 is turned on.
  • the drain electrode 27 Since the drain electrode 27 is connected to the lower electrode film 21, when the transistor 25 is turned on, the voltage of the drain electrode 27 is applied to the lower electrode film 21. Since the lower electrode films 21 are insulated from each other by the insulating layer 29, no electricity is transmitted from one lower electrode film 21 to the other lower electrode film 21, and the lower electrode films 21 connected to the conductive transistor 25 are not connected. Only the voltage is applied.
  • the water absorbing layer 17 is mainly composed of a transparent water absorbing material
  • the sealing layer 18 is made of a transparent insulating material such as SiON
  • the water absorbing layer 17 and the sealing layer 18 are High transparency Since it has optical properties, light emitted from the organic layer 12 passes through the transparent electrode film 15, the water absorbing layer 17, and the sealing layer 18.
  • the cap 30 is a force closely attached to the sealing layer 18, or if there is a space between the cap 30 and the sealing layer 18, no light-shielding substance is disposed in the space. Instead, the cap 30 is made transparent as described above, so that the light transmitted through the sealing layer 18 is transmitted through the cap 30 and is emitted to the outside.
  • the organic EL device 10 by selecting the transistor 25 to be turned on, only a desired portion of the organic layer 12 emits light, and image information such as characters and figures can be displayed.
  • members (wirings, electrodes, and the like) forming the transistor 25 are opaque, but light emitted from the organic layer 12 is not reflected on the substrate 11 side on which the transistor 25 is disposed, but on the transparent electrode film 15 side.
  • the organic EL device 10 has high brightness because the light is emitted to the device.
  • a reflective member having a reflective property is arranged on a member in the active region 20, for example, on the lower electrode film 21 or the insulating layer 29, radiation is emitted from the organic layer 12 toward the substrate 11 side. The reflected light is reflected by the reflection member and emitted to the transparent electrode film 15 side, so that the luminance of the organic EL device 10 can be further increased.
  • the substrate 11 is not particularly limited, and a transparent substrate exemplified by a glass substrate or another opaque substrate such as a ceramic substrate can be used.
  • a transparent substrate exemplified by a glass substrate or another opaque substrate such as a ceramic substrate
  • the substrate 11 may not be transparent. If a transparent substrate is used for the substrate 11, light emitted from the organic layer 12 can be emitted to both the cap 30 side and the substrate 11 side.
  • the lower electrode film 21 and the transistor 25 formed in the active region 20 are not particularly limited. Although the above description has been made on the case where one transistor 25 is arranged for one lower electrode film 21, a plurality of transistors may be provided for one lower electrode film 21.
  • a so-called active matrix type organic EL device in which a plurality of lower electrode films 21 are arranged in a matrix and a transistor 25 is provided on each lower electrode film 21 has been described, but the present invention is not limited to this.
  • a linear lower electrode film is arranged in the active area 20 substantially parallel to the active area 20 and a linear transparent electrode film is formed on the active area 20 so as to be orthogonal to the lower electrode film.
  • the present invention also includes a so-called simple matrix organic EL device in which the organic layer 12 emits light at a position where the transparent electrode film and the lower electrode film cross each other. Also in this case, by providing a transparent water-absorbing layer on the transparent electrode film, it is possible to prevent water from entering the organic layer 12.
  • the organic layer 12 has a single-layer structure
  • the organic layer is formed by laminating a plurality of layers such as a hole transport layer, a light emitting layer, and an electron transport layer in the thickness direction.
  • the present invention also includes the case where a
  • a plurality of lower electrode films 21 adjacent to each other are used as one set of light-emitting units, and an organic light-emitting device that emits light of different colors such as red, blue, green, etc.
  • an organic light-emitting device that emits light of different colors such as red, blue, green, etc.
  • the emission colors of the organic layers 12 are the same, color filters of different colors are provided on the organic layers 12 so that the organic layers 12 where the color filters of the desired colors are located emit light.
  • the image information can be displayed in color.
  • the organic EL device is used as a display device for displaying image information
  • the present invention is not limited to this. If the organic layer 12 emits light over a wide area, it can be used as a light emitting device.
  • the type and thickness of the transparent electrode film 15 are not particularly limited either.
  • the transparent electrode film 15 contains any one metal material selected from the group consisting of Li, Ca, Mg, and Ag.
  • a film formed with a thickness of lOnm or more and 15 nm or less (100 to 15 ⁇ ), more preferably a thickness of 12 nm (120 A) can be used.
  • a transparent conductive film such as an InZnO film can be formed on the surface of the transparent electrode film 15 by vapor deposition.
  • the thickness of the water-absorbing layer 17 is not particularly limited, but if the thickness of the water-absorbing layer 17 is less than 5 nm, the water absorption is insufficient, and if it exceeds 20 nm, the light transmittance may decrease. Therefore, the thickness is preferably 5 nm or more and 20 nm or less.
  • the substance constituting the water-absorbing layer 17 is water-absorbing and is not particularly limited as long as it is a transparent water-absorbing material.
  • the substance having a transmittance Z and a refractive index used for the cap 30 eg, glass
  • the cap 30 is made of glass
  • the method for forming the water-absorbing layer is not limited to the vapor deposition method, and the water-absorbing layer can be formed by another film-forming method such as a sputtering method.
  • the sputtering speed is set to 0.2 to 0.2 nmZ (lAZs to 2AZs) so as not to damage the transparent electrode film 15 and the organic layer 12.
  • the shape of the water absorbing layer 17 is not particularly limited. If the water absorbing layer 17 has sufficient insulating properties and is made of an absorbing material having low chemical reactivity with the organic material of the organic layer 12, the side surface of the transparent electrode film 15 and the organic layer 12 A water absorbing layer 17 is formed to cover the side surface.
  • the material constituting the cap 30 is not particularly limited as long as it is a material that transmits light (particularly, visible light), and glass or transparent resin (for example, acrylic resin) can be used. Also, it is not necessary that the entire cap 30 be transparent, and at least the portion located on the active area 20 is transparent. Also, the shape of the cap 30 is not particularly limited.
  • the order of forming these layers is not limited to this.
  • the sealing layer 18 may be formed on the transparent electrode film 15, and the water absorbing layer 17 may be formed on the sealing layer 18.
  • the sealing layer 18, the water absorbing layer 17, and the sealing layer 18 may be laminated on the transparent electrode film 15 in the order described.
  • the number of the sealing layers 18 and the water absorbing layers 17 and the order of lamination are not particularly limited.
  • the material constituting the sealing layer 18 has a high translucency! If it is a material, it is not limited to SiON. It is also possible to use another material such as SiO. Especially the membrane method
  • the sealing layer 18 may be a combination of SiON and SiO. Specifically, the transparent electrode film
  • a layer and a water absorbing layer 17 containing MgO as a main component may be provided.
  • the order of laminating the first and second sealing layers and the water absorbing layer 17 is not particularly limited.
  • the MgO layer water absorbing layer
  • the sealing layer 18 on the transparent electrode film 15, the influence of sputtering on the transparent electrode film 15 and the organic layer 12 can be suppressed.
  • the adhesive resin 31 for fixing the cap 30 to the substrate 11 is not limited to an acrylic resin, but may be, for example, urethane resin or epoxy resin as an ultraviolet curable resin. Further, the adhesive resin 31 is not limited to the ultraviolet curing type, and various types such as a thermosetting type can be used. Further, a resin obtained by adding other resins such as a thermoplastic resin and additives such as a filler, an ultraviolet absorber, an antioxidant, and a coloring agent to the adhesive resin 31 may be used.
  • the shape and location of the desiccant 32 are not particularly limited.If it is outside the active area 20, for example, it can be installed on the inner side surface of the cap 30.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A long-lived organic EL device is provided. An organic EL device (10) has a water absorbing layer (17) disposed on a transparent electrode membrane (15). Since the water absorbing layer (17) is made of transparent water absorbing material such as MgO, there is no possibility that the light emitted from an organic layer (12) and passed through the transparent electrode membrane (15) will be absorbed by the water absorbing layer (17). Therefore, even if the water absorbing layer (17) is formed widely over a display range, the brightness of the device will not lower. Further, the moisture entering the organic EL device (10) is absorbed by this water absorbing layer (17), so that the organic layer (12) will never be moisture-deteriorated, prolonging the life of the device.

Description

明 細 書  Specification
有機 EL装置  Organic EL device
技術分野  Technical field
[0001] 本発明は有機 EL装置の分野に関する。  [0001] The present invention relates to the field of organic EL devices.
背景技術  Background art
[0002] 従来より、有機 EL (Electro Luminescence)を用いた表示装置や発光装置は広く用 いられており、これらの装置の寿命を伸ばすことが求められている。有機 EL装置が短 寿命となる主な原因は、水分が素子内に侵入することにより電極が有機層から剥離し 、ダークスポットと呼ばれる発光不良箇所が発生することである。従って、素子への水 分の侵入を防げば、有機 EL装置の寿命を延ばすことができる。  [0002] Conventionally, display devices and light emitting devices using organic EL (Electro Luminescence) have been widely used, and it is required to extend the life of these devices. The main cause of the short life of the organic EL device is that moisture enters the element and the electrode is peeled off from the organic layer, thereby generating a light emission defective spot called a dark spot. Therefore, the life of the organic EL device can be extended by preventing water from entering the element.
[0003] 有機 EL層から放出される光力 基板を透過して基板表面カゝら放出されるボトムエミ ッシヨン型の有機 EL装置では、基板の裏面側にキャップを設置して有機層を封止す ると共に、キャップの内側に乾燥剤を装着して水分を吸収している。(例えば、特許文 献 1の図 1、図 8を参照。)  [0003] In a bottom emission type organic EL device in which light is emitted from the organic EL layer and passes through the substrate and is emitted from the surface of the substrate, a cap is provided on the back side of the substrate to seal the organic layer. In addition, a desiccant is attached inside the cap to absorb moisture. (For example, see Figures 1 and 8 in Patent Document 1.)
しかし、基板側に TFT(Thin Film Transistor:薄膜トランジスタ)を設ける場合には、 有機層から放出される光が TFTで吸収されるので、表示面積が減少し、装置の輝度 が下がることがある。  However, when a TFT (Thin Film Transistor) is provided on the substrate side, the light emitted from the organic layer is absorbed by the TFT, so that the display area is reduced and the brightness of the device may be reduced.
[0004] このため、基板の裏面側(キャップ側)に光を放出させるトップェミッション型の有機 EL装置が提案されている。(特許文献 1、図 3〜6と、特許文献 2を参照。 )  [0004] Therefore, a top emission type organic EL device that emits light to the back surface side (cap side) of a substrate has been proposed. (See Patent Document 1, FIGS. 3 to 6 and Patent Document 2.)
トップェミッション型では、 TFTが設けられた基板側へ光を放出する必要がな 、た め、発光面積を大きくすることができ、装置の輝度を高ることができる。尚、このようなト ップェミッション型では裏面のキャップを透明基板で形成する必要がある。  In the top emission type, it is not necessary to emit light to the substrate side on which the TFT is provided, so that the light emitting area can be increased and the brightness of the device can be increased. Incidentally, in such a top emission type, the cap on the back surface needs to be formed of a transparent substrate.
[0005] しかしトップェミッション型では、ボトムェミッション型のようにキャップ内側の広!ヽ範 囲に乾燥剤を設置すると、乾燥剤で光が吸収されてしまうので、乾燥剤を十分に設 置することができない。防水性能が十分でなぐ装置の寿命がボトムェミッション型に 比べて短くなつてしまう場合がある。  [0005] However, in the top emission type, the inside of the cap is wide like the bottom emission type! (4) If a desiccant is set in the range, light is absorbed by the desiccant, so that the desiccant cannot be sufficiently set. Insufficient waterproof performance may shorten the life of the device compared to the bottom emission type.
特許文献 1 :特開 2000— 173766号公報 特許文献 2 :特開 2003— 142254号公報 Patent Document 1: JP-A-2000-173766 Patent Document 2: JP 2003-142254 A
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0006] 本発明は上記従来技術の不都合を解決するために創作されたものであり、その目 的は、輝度が高ぐかつ、寿命の長いトップェミッション型の有機 EL装置を提供する ことである。 [0006] The present invention has been made in order to solve the above-mentioned disadvantages of the related art, and an object thereof is to provide a top emission type organic EL device having high luminance and a long life. is there.
課題を解決するための手段  Means for solving the problem
[0007] 上記課題を解決するために、本発明は、基板と、前記基板上に配置され、電気素 子と下部電極膜とが形成された能動領域と、前記能動領域上に配置された有機層と 、前記有機層上に配置された透明電極膜とを有し、前記電気素子を導通すると、前 記下部電極膜と、前記透明電極膜との間に位置する前記有機層に電流が流れ、前 記有機層の前記電流が流れた部分が発光するように構成された有機 EL装置であつ て、前記透明電極膜上には透明な吸水性物質を主成分とする吸水層が配置され、 前記有機層で発光した光は、前記透明電極膜と、前記吸水層とを透過して外部に放 出される有機 EL装置である。 [0007] In order to solve the above problems, the present invention provides a substrate, an active region disposed on the substrate, on which an electric element and a lower electrode film are formed, and an organic region disposed on the active region. A transparent electrode film disposed on the organic layer, and when the electric element is turned on, a current flows through the organic layer located between the lower electrode film and the transparent electrode film. An organic EL device configured to emit light in the portion of the organic layer where the current flows, wherein a water-absorbing layer mainly composed of a transparent water-absorbing substance is disposed on the transparent electrode film; The light emitted from the organic layer is transmitted through the transparent electrode film and the water-absorbing layer and emitted to the outside.
本発明は、有機 EL装置であって、前記吸水層は MgO力もなる吸水性物質を含有 する有機 EL装置である。  The present invention is an organic EL device, wherein the water-absorbing layer contains a water-absorbing substance that also has MgO power.
本発明は、有機 EL装置であって、前記吸水層はスパッタリングにより形成された有 機 EL装置である。  The present invention is an organic EL device, wherein the water absorbing layer is an organic EL device formed by sputtering.
本発明は、有機 EL装置であって、前記吸水層の膜厚は 5nm以上 20nm以下にさ れた有機 EL装置である。  The present invention is an organic EL device, wherein the water absorbing layer has a thickness of 5 nm or more and 20 nm or less.
本発明は、有機 EL装置であって、前記吸水層上には透明な封止層が配置され、 前記吸水層と前記有機層は、前記封止層と前記基板とで取り囲まれた有機 EL装置 である。  The present invention is an organic EL device, wherein a transparent sealing layer is disposed on the water absorbing layer, and the water absorbing layer and the organic layer are surrounded by the sealing layer and the substrate. It is.
本発明は、有機 EL装置であって、前記封止層は窒酸ィ匕シリコンと酸ィ匕シリコンのい ずれか一方又は両方を含有する有機 EL装置である。  The present invention is the organic EL device, wherein the sealing layer contains one or both of silicon nitride and silicon nitride.
本発明は、有機 EL装置であって、前記封止層上には透明な容器が配置され、前 記封止層と、前記吸水層と、前記有機層は前記容器と前記基板とで取り囲まれた有 機 EL装置である。 The present invention is an organic EL device, wherein a transparent container is disposed on the sealing layer, and the sealing layer, the water absorbing layer, and the organic layer are surrounded by the container and the substrate. Tayu Machine EL device.
本発明は、有機 EL装置であって、前記容器と前記基板との間であって、前記能動 領域よりも外側の位置に乾燥剤が配置された有機 EL装置である。  The present invention is an organic EL device, wherein a desiccant is disposed between the container and the substrate and at a position outside the active region.
発明の効果  The invention's effect
[0008] 本発明では吸水層は透明にされており、有機層で発光した光は吸水層に吸収され ず、透過するので、吸水層は表示範囲にも形成可能である。従って、従来の有機 EL 装置のように吸水層を設ける場所の制約を受けず、吸水層を広範囲に配置すること が可能であり、装置内部に侵入した水分は吸水層に吸収されるので、有機層が水分 によって劣化せず、装置の寿命が長くなる。このように、本発明によればトップエミッシ ヨン型でも十分な吸水能力を有し、防水性が高!ヽ有機 EL表示装置を提供することが できる。  [0008] In the present invention, the water-absorbing layer is made transparent, and light emitted from the organic layer is not absorbed by the water-absorbing layer but passes through, so that the water-absorbing layer can also be formed in the display range. Therefore, it is possible to arrange the water absorbing layer over a wide range without being restricted by the place where the water absorbing layer is provided unlike the conventional organic EL device, and the water entering the device is absorbed by the water absorbing layer. The layers are not degraded by moisture and the life of the device is extended. As described above, according to the present invention, even the top emission type has a sufficient water absorbing ability and high waterproofness! (4) An organic EL display device can be provided.
図面の簡単な説明  Brief Description of Drawings
[0009] [図 1] (a)〜 (g):本発明の有機 EL装置を製造する工程の一例を説明する断面図 [図 2]キャップを説明するための断面図  [0009] [FIG. 1] (a) to (g): cross-sectional views illustrating an example of a process for manufacturing the organic EL device of the present invention [FIG. 2] cross-sectional views illustrating a cap
[図 3]本発明の有機 EL装置の拡大断面図  FIG. 3 is an enlarged sectional view of the organic EL device of the present invention.
符号の説明  Explanation of symbols
[0010] 10……有機 EL装置 11……基板 12……有機層 15……透明電極膜 1 7……吸水層 18……封止層 20……能動領域 25……トランジスタ (電気素 子) 30……キャップ (容器)  [0010] 10: Organic EL device 11: Substrate 12: Organic layer 15: Transparent electrode film 17: Water absorbing layer 18: Sealing layer 20: Active area 25: Transistor (electric element) 30… Cap (container)
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0011] 先ず、本発明の有機 EL装置を製造する工程の一例について詳細に説明する。図 1 (a)の符号 11は基板を示しており、この基板 11の片面には、後述する電気素子と 下部電極膜とが形成されている。図 1 (a)の符号 20は電気素子と下部電極膜が形成 された領域である能動領域を示して 、る。  First, an example of a process for manufacturing the organic EL device of the present invention will be described in detail. In FIG. 1A, reference numeral 11 denotes a substrate, and an electric element and a lower electrode film, which will be described later, are formed on one surface of the substrate 11. Reference numeral 20 in FIG. 1A indicates an active region in which an electric element and a lower electrode film are formed.
[0012] 図 1 (a)の符号 9は後述する有機層の成膜に用いられるマスクを示しており、図 l (a )に示すように、マスク 9の開口が能動領域 20上に位置し、基板 11の縁部分がマスク 9で覆われるように、マスク 9を基板 11上に配置する。その状態で、基板 11をマスク 9 と一緒に第一の成膜装置 (ここでは蒸着装置)内部に配置する。 Reference numeral 9 in FIG. 1 (a) indicates a mask used for forming an organic layer described later. As shown in FIG. L (a), the opening of the mask 9 is located on the active area 20. Then, the mask 9 is arranged on the substrate 11 so that the edge of the substrate 11 is covered with the mask 9. In that state, mask the substrate 11 9 Together with the inside of a first film forming apparatus (here, a vapor deposition apparatus).
[0013] 第一の成膜装置の内部には予め真空雰囲気が形成されており、該真空雰囲気を 維持しながら、第一の成膜装置の内部に配置された有機材料を加熱し、有機材料の 蒸気を発生させる。  [0013] A vacuum atmosphere is previously formed inside the first film forming apparatus, and while maintaining the vacuum atmosphere, the organic material disposed inside the first film forming apparatus is heated, and the organic material is heated. Generates steam.
[0014] 基板 11はマスク 9が配置された側の面が有機材料に向けて保持されており、有機 材料の蒸気はマスク 9の開口を通過し、マスク 9の開口を通過した蒸気は能動領域 2 0表面に付着して有機材料の膜 (有機層 12)が成長する(図 1 (b) )。  The surface of the substrate 11 on which the mask 9 is disposed is held toward the organic material, and the vapor of the organic material passes through the opening of the mask 9, and the vapor that has passed through the opening of the mask 9 A film of organic material (organic layer 12) grows on the 20 surface (Fig. 1 (b)).
[0015] 有機層 12が所定膜厚に成長したところで、基板 11をマスク 9と一緒に第一の成膜 装置から第二の成膜装置 (ここではスパッタ装置)に搬入する。第二の成膜装置の内 部には予め真空雰囲気が形成され、該真空雰囲気内に透明導電材料からなるター ゲットが配置されている。  When the organic layer 12 has grown to a predetermined thickness, the substrate 11 is transported together with the mask 9 from the first film forming apparatus to a second film forming apparatus (here, a sputtering apparatus). A vacuum atmosphere is previously formed inside the second film forming apparatus, and a target made of a transparent conductive material is arranged in the vacuum atmosphere.
[0016] 第二の成膜装置内部の真空雰囲気を維持しながら、基板 11に接地電位、ターゲッ トに負電圧を印加すると、ターゲットがスパッタされ、ターゲットからスパッタ粒子が放 出される。  When a ground potential is applied to the substrate 11 and a negative voltage is applied to the target while maintaining a vacuum atmosphere inside the second film forming apparatus, the target is sputtered and sputtered particles are emitted from the target.
[0017] 基板 11はマスク 9が配置された側の面がターゲットに向けて配置されており、ターゲ ットから放出されたスパッタ粒子のうち、マスク 9の開口を通過したスパッタ粒子は有 機層 12の表面に付着し、透明導電材料の膜 (透明電極膜 15)が成長する(図 1 (c) ) 。透明電極膜 15が所定膜厚に成長したところで、基板 11をマスク 9と一緒に、第二の 成膜装置から第三の成膜装置 (ここでは蒸着装置)へ搬入する。  The substrate 11 has the surface on the side where the mask 9 is disposed facing the target, and among the sputter particles emitted from the target, the sputter particles that have passed through the opening of the mask 9 are organic layers. The transparent conductive material film (transparent electrode film 15) grows on the surface of the substrate 12 (FIG. 1 (c)). When the transparent electrode film 15 has grown to a predetermined thickness, the substrate 11 is carried together with the mask 9 from the second film forming apparatus to a third film forming apparatus (here, a vapor deposition apparatus).
[0018] 第三の成膜装置内部には予め真空雰囲気が形成されており、該真空雰囲気を維 持しながら、第三の成膜装置内部に配置された透明な吸水材料 (ここでは MgO)を 加熱し、該吸水材料の蒸気を発生させる。  A vacuum atmosphere is previously formed inside the third film forming apparatus, and a transparent water absorbing material (here, MgO) placed inside the third film forming apparatus is maintained while maintaining the vacuum atmosphere. Is heated to generate vapor of the water absorbing material.
[0019] 基板 11はマスク 9が配置された側の面が吸水材料に向けて配置されており、開口 を通過した吸水材料の蒸気は、透明電極膜 15の表面に到達し、透明電極膜 15表面 に吸水材料の層(吸水層 17)が成長する(図 1 (d) )。  The surface of the substrate 11 on which the mask 9 is disposed faces the water-absorbing material, and the vapor of the water-absorbing material passing through the opening reaches the surface of the transparent electrode film 15, A layer of water-absorbing material (water-absorbing layer 17) grows on the surface (Fig. 1 (d)).
[0020] 吸水層 17が所定膜厚に成長したところで、基板 11を第三の成膜装置力も搬出し、 マスク 9を基板 11上力 取り除いた後、基板 11を第四の成膜装置 (ここでは CVD装 置)内に搬入する。 [0021] 第四の成膜装置の内部には真空排気によって予め真空雰囲気が形成されており、 真空排気を続けながら、第四の成膜装置内部にケィ素を含有する第一の原料ガス ( ここでは SiHガス)と、酸素と窒素を含有する第二の原料ガス (ここでは Oガスと、 N When the water-absorbing layer 17 has grown to a predetermined film thickness, the substrate 11 is also carried out by the third film forming apparatus, and the mask 9 is removed from the substrate 11. In the case of CVD equipment). A vacuum atmosphere is previously formed inside the fourth film forming apparatus by vacuum evacuation, and while the vacuum evacuation is continued, the first raw material gas containing silicon is contained inside the fourth film forming apparatus ( Here, SiH gas) and a second source gas containing oxygen and nitrogen (here, O gas, N
4 2  4 2
Hガス)とを一緒に供給し、所定圧力の成膜雰囲気を形成する。  H gas) is supplied together to form a film formation atmosphere at a predetermined pressure.
3  Three
[0022] 第四の成膜装置内部には電極が配置されており、成膜雰囲気を維持しながら、基 板 11に接地電位、電極に負電圧を印加すると、第一、第二の原料ガスのプラズマが 発生し、基板 11の表面に第一、第二の原料ガスの反応物(窒酸化シリコン、 SiON) 力 なる絶縁膜が成長する。  Electrodes are arranged inside the fourth film forming apparatus. When a ground potential and a negative voltage are applied to the substrate 11 and the electrode while maintaining the film forming atmosphere, the first and second source gases are applied. Is generated, and an insulating film is formed on the surface of the substrate 11 as a reactant (silicon oxynitride, SiON) of the first and second source gases.
[0023] SiON中の窒化ケィ素の量が多くなりすぎると絶縁膜が着色される力 窒素含有ガ ス (NHガス)の供給量は、絶縁膜が透明になる程度に少なくされているので、基板 1 If the amount of silicon nitride in SiON is too large, the insulating film is colored. The supply amount of nitrogen-containing gas (NH gas) is so small that the insulating film becomes transparent. Board 1
3 Three
1上には透明な絶縁膜が成長する。絶縁膜が所定膜厚まで成長したところで、基板 1 1を第四の成膜装置力 搬出する。  A transparent insulating film grows on 1. When the insulating film has grown to a predetermined thickness, the substrate 11 is unloaded from the fourth film forming apparatus.
[0024] 図 1 (e)は所定膜厚の絶縁膜 18'が形成された直後の状態を示しており、この状態 では絶縁膜 18'は吸水層 17の表面及び側面と、透明電極膜 15の側面と、有機層 1 2の側面と、能動領域 20の周囲と、基板 11表面の能動領域 20よりも外側の部分を連 続して覆っている。 FIG. 1E shows a state immediately after the insulating film 18 ′ having a predetermined thickness is formed. In this state, the insulating film 18 ′ is formed on the surface and side surfaces of the water absorbing layer 17 and the transparent electrode film 15. Side, the side of the organic layer 12, the periphery of the active region 20, and the portion of the surface of the substrate 11 outside the active region 20 in a continuous manner.
[0025] 次に、絶縁膜 18'の能動領域 20よりも外側に位置する部分をエッチング除去すると 、基板 11の端部が露出する。図 1 (f)はエッチング後の状態を示しており、同図の符 号 18はエッチングされずに残った絶縁膜 18'からなる封止層を示している。  Next, when the portion of the insulating film 18 ′ located outside the active region 20 is removed by etching, the end of the substrate 11 is exposed. FIG. 1 (f) shows a state after the etching, and reference numeral 18 in the same figure denotes a sealing layer made of the insulating film 18 ′ remaining without being etched.
[0026] 封止層 18は能動領域 20の周囲と、有機層 12の側面と、透明電極膜 15の側面と、 吸水層 17の側面及び表面を連続して覆うように形成されており、従って、有機層 12 と、透明電極膜 15と、吸水層 17は、封止層 18と基板 11とで取り囲まれ、外部から遮 蔽された状態になっている。  [0026] The sealing layer 18 is formed so as to continuously cover the periphery of the active region 20, the side surface of the organic layer 12, the side surface of the transparent electrode film 15, and the side surface and surface of the water absorbing layer 17, The organic layer 12, the transparent electrode film 15, and the water absorbing layer 17 are surrounded by the sealing layer 18 and the substrate 11, and are shielded from the outside.
[0027] 図 2の符号 30は透明な容器状のキャップを示しており、キャップの容器開口の縁部 分にはリング状の溝 37〜39が複数形成されている。ここでは各溝 37〜39のリングの 中心は、キャップ 30の開口の中心と一致しており、各溝 37〜39の内径はキャップ 30 の開口の径よりも大きくなつている。従って、キャップ 30の開口は溝 37〜39で取り囲 まれた状態になっている。 [0028] このキャップ 30を上述した基板 11に取り付けるには、少なくとも最外周に位置する 溝 37にリング状の接着剤榭脂 31を配置し、最外周の溝 37よりも内側に位置する溝 3[0027] Reference numeral 30 in FIG. 2 indicates a transparent container-shaped cap, and a plurality of ring-shaped grooves 37 to 39 are formed at an edge of the container opening of the cap. Here, the center of the ring of each groove 37-39 coincides with the center of the opening of the cap 30, and the inner diameter of each groove 37-39 is larger than the diameter of the opening of the cap 30. Therefore, the opening of the cap 30 is surrounded by the grooves 37-39. In order to attach the cap 30 to the substrate 11 described above, a ring-shaped adhesive resin 31 is arranged at least in the groove 37 located at the outermost periphery, and the groove 3 located inside the groove 37 located at the outermost periphery.
8、 39にリング状の乾燥剤 32を配置する(図 2)。 A ring-shaped desiccant 32 is placed on 8, 39 (Fig. 2).
[0029] 接着剤榭脂 31と乾燥剤 32のリングの厚みは、溝 37〜39の深さよりも大きくされて いるので、接着剤榭脂 31と乾燥剤 32はキャップ 30の縁部分の表面力も突き出され ている。 [0029] Since the thickness of the ring of the adhesive resin 31 and the desiccant 32 is made larger than the depth of the grooves 37 to 39, the adhesive resin 31 and the desiccant 32 also reduce the surface force of the edge portion of the cap 30. It is protruding.
[0030] キャップ 30の開口の内径は、上述した封止層 18の径よりも大きくなつており、キヤッ プ 30の開口と、基板 11の封止層 18が配置された側の面とを対向させ、封止層 18が 形成された領域上に開口が位置するように位置合わせし、キャップ 30を基板 11上に 載置すると、封止層 18がキャップ 30で覆われ、接着剤榭脂 31と乾燥剤 32が、基板 1 1の封止層 18が形成された領域よりも外側の部分に密着する。  [0030] The inner diameter of the opening of the cap 30 is larger than the diameter of the sealing layer 18 described above, and the opening of the cap 30 faces the surface of the substrate 11 on the side where the sealing layer 18 is arranged. When the cap 30 is placed on the substrate 11, the sealing layer 18 is covered with the cap 30 and the adhesive resin 31 is formed. The desiccant 32 adheres to a portion of the substrate 11 outside the region where the sealing layer 18 is formed.
[0031] ここでは、接着剤榭脂 31は紫外線硬化榭脂を含有しており、接着剤榭脂 31に紫 外線を照射すると、接着剤榭脂 31が基板 11の封止層 18よりも外側の部分と、キヤッ プ 30の両方に密着した状態で硬化する。  Here, the adhesive resin 31 contains an ultraviolet curable resin, and when the adhesive resin 31 is irradiated with ultraviolet light, the adhesive resin 31 is located outside the sealing layer 18 of the substrate 11. It cures in a state where it is in close contact with both the part and the cap 30.
[0032] 図 1 (g)の符号 10は接着剤榭脂 31が硬化した状態の有機 EL装置を示している。  Reference numeral 10 in FIG. 1G indicates the organic EL device in a state where the adhesive resin 31 is cured.
上述したように、接着剤榭脂 31は、基板 11の封止層 18よりも外側の部分と、キャップ 30の両方に密着した状態で硬化しており、従って、封止層 18は基板 11とキャップ 30 と硬化した接着剤榭脂 31で取り囲まれて ヽる。  As described above, the adhesive resin 31 is cured in a state in which both the portion of the substrate 11 outside the sealing layer 18 and the cap 30 are in close contact with each other. It is surrounded by the cap 30 and the hardened adhesive resin 31.
[0033] 接着剤榭脂 31はアクリル榭脂のように、硬化した後の防水性が高い樹脂で構成さ れている。また、キャップ 30はガラスのように防水性の高い物質で構成され、基板 11 もガラス板のように防水性の高 、ものが用いられて 、るので、硬化した接着剤榭脂 31 とキャップ 30と基板 11とで取り囲まれた空間には外部雰囲気の水分が浸入し難ぐ また、仮に外部雰囲気の水分が接着剤榭脂 31を通過し、浸入したとしても、その水 分は接着剤榭脂 31のリングの内側に配置された乾燥剤 32に吸収される。  [0033] The adhesive resin 31 is made of a resin having high waterproofness after curing, such as an acrylic resin. Further, the cap 30 is made of a highly waterproof substance such as glass, and the substrate 11 is also made of a highly waterproof substance such as a glass plate, so that the cured adhesive resin 31 and the cap 30 are used. It is difficult for the moisture of the external atmosphere to enter the space surrounded by the substrate 11 and the moisture of the external atmosphere, even if the moisture of the external atmosphere passes through the adhesive resin 31 and enters the space. Absorbed by a desiccant 32 located inside the 31 ring.
[0034] 従って、封止層 18には水分が到達し難ぐ封止層 18と基板 11とで取り囲まれた有 機層 12に水分が浸入し難い。また、仮に封止層 18と基板 11とで取り囲まれた空間 に水分が浸入したとしても、その空間には吸水層 17が配置されており、水分は吸水 層 17に吸収されるので、有機層 12が水分によって化学的に劣化することがな!、。 [0035] 次に、この有機 EL装置 10が発光する工程の一例について説明する。図 3は有機 E L装置 10の拡大断面図を示している。能動領域 20には複数の下部電極膜 21が行 列状に並べられており、各下部電極膜 21の近傍位置には電気素子 (ここではトラン ジスタ 25)が少なくとも 1個ずつ配置されて!ヽる。 Accordingly, moisture hardly reaches the sealing layer 18 and the organic layer 12 surrounded by the sealing layer 18 and the substrate 11. Even if moisture enters the space surrounded by the sealing layer 18 and the substrate 11, the water absorbing layer 17 is disposed in that space, and the water is absorbed by the water absorbing layer 17, so that the organic layer 12 cannot be chemically degraded by moisture! Next, an example of a process in which the organic EL device 10 emits light will be described. FIG. 3 shows an enlarged cross-sectional view of the organic EL device 10. A plurality of lower electrode films 21 are arranged in a row in the active region 20, and at least one electric element (here, a transistor 25) is arranged near each lower electrode film 21! You.
[0036] ここでは、各トランジスタ 25は、ゲート電極 22と、ソース電極 23と、ドレイン電極 27と 、半導体層 26とをそれぞれ有している。ゲート電極 22は絶縁性薄膜 24で覆われて おり、半導体層 26は絶縁性薄膜 24表面に密着配置され、ソース電極 23とドレイン電 極 27は互 、に離間した状態で、半導体層 26に密着配置されて!、る。  Here, each transistor 25 has a gate electrode 22, a source electrode 23, a drain electrode 27, and a semiconductor layer 26, respectively. The gate electrode 22 is covered with the insulating thin film 24, the semiconductor layer 26 is disposed in close contact with the surface of the insulating thin film 24, and the source electrode 23 and the drain electrode 27 are in close contact with the semiconductor layer 26 while being separated from each other. Arranged!
[0037] 能動領域 20には不図示のソース配線とゲート配線が互いに絶縁された状態で延 設されており、ソース配線は電源回路に接続され、ゲート配線は制御回路に接続さ れている。ソース配線はソース電極 23に接続され、ゲート配線はゲート電極 22に接 続されており、電源回路力もの電圧はソース電極 23に印加され、制御回路からの電 圧はゲート電極 22に印加されるようになって 、る。  [0037] A source line and a gate line (not shown) extend in the active region 20 while being insulated from each other. The source line is connected to a power supply circuit, and the gate line is connected to a control circuit. The source wiring is connected to the source electrode 23, the gate wiring is connected to the gate electrode 22, the voltage of the power supply circuit is applied to the source electrode 23, and the voltage from the control circuit is applied to the gate electrode 22. It's like that.
[0038] この有機 EL装置 10を発光させるには、導通させるトランジスタ 25を選択し、選択し たトランジスタ 25のソース電極 23と、ゲート電極 22に電圧が印加されるように、ソース 配線とゲート配線に電圧を印加すると、選択されたトランジスタ 25の半導体層 26の抵 抗値が下がり、ソース電極 23とドレイン電極 27が電気的に接続され、そのトランジス タ 25が導通状態になる。  In order for the organic EL device 10 to emit light, a transistor 25 to be turned on is selected, and a source line and a gate line are connected so that a voltage is applied to the source electrode 23 and the gate electrode 22 of the selected transistor 25. When a voltage is applied to the transistor 25, the resistance value of the semiconductor layer 26 of the selected transistor 25 decreases, the source electrode 23 and the drain electrode 27 are electrically connected, and the transistor 25 is turned on.
[0039] ドレイン電極 27は下部電極膜 21に接続されているので、トランジスタ 25が導通され ると、下部電極膜 21にドレイン電極 27の電圧が印加されることになる。下部電極膜 2 1同士は絶縁層 29によって絶縁されているので、 1つの下部電極膜 21から他の下部 電極膜 21に電気が伝わらず、導通されたトランジスタ 25に接続された下部電極膜 2 1だけに電圧が印加されることになる。  Since the drain electrode 27 is connected to the lower electrode film 21, when the transistor 25 is turned on, the voltage of the drain electrode 27 is applied to the lower electrode film 21. Since the lower electrode films 21 are insulated from each other by the insulating layer 29, no electricity is transmitted from one lower electrode film 21 to the other lower electrode film 21, and the lower electrode films 21 connected to the conductive transistor 25 are not connected. Only the voltage is applied.
[0040] 上述した有機層 12は各下部電極膜 21と透明電極膜 15に密着しているので、透明 電極膜 15に負電圧を印加した状態で、選択した下部電極膜 21に正電圧を印加する と、有機層 12のうち、選択した下部電極膜 21上の部分に電流が流れて発光する。  Since the above-mentioned organic layer 12 is in close contact with each lower electrode film 21 and the transparent electrode film 15, a positive voltage is applied to the selected lower electrode film 21 while a negative voltage is applied to the transparent electrode film 15. Then, a current flows to a portion of the organic layer 12 on the selected lower electrode film 21 to emit light.
[0041] 上述したように吸水層 17は透明な吸水材料を主成分とし、封止層 18は SiONのよ うな透明な絶縁性物質で構成されており、吸水層 17と封止層 18はそれぞれ高い透 光性を有しているので、有機層 12から放出される光は、透明電極膜 15と、吸水層 17 と、封止層 18とを透過する。 As described above, the water absorbing layer 17 is mainly composed of a transparent water absorbing material, the sealing layer 18 is made of a transparent insulating material such as SiON, and the water absorbing layer 17 and the sealing layer 18 are High transparency Since it has optical properties, light emitted from the organic layer 12 passes through the transparent electrode film 15, the water absorbing layer 17, and the sealing layer 18.
[0042] キャップ 30は封止層 18に密着されている力、又はキャップ 30と封止層 18との間に 空間がある場合はその空間には遮光性のある物質は何も配置されておらず、上述し たようにキャップ 30は透明にされて!、るので、封止層 18を透過した光はキャップ 30と を透過して外部に放出されることになる。  [0042] The cap 30 is a force closely attached to the sealing layer 18, or if there is a space between the cap 30 and the sealing layer 18, no light-shielding substance is disposed in the space. Instead, the cap 30 is made transparent as described above, so that the light transmitted through the sealing layer 18 is transmitted through the cap 30 and is emitted to the outside.
[0043] この有機 EL装置 10では、導通させるトランジスタ 25を選択することで、有機層 12 の所望部分だけを発光させ、文字や図形等の画像情報を表示することができる。  In the organic EL device 10, by selecting the transistor 25 to be turned on, only a desired portion of the organic layer 12 emits light, and image information such as characters and figures can be displayed.
[0044] 一般に、トランジスタ 25を構成する部材 (配線や電極等)は不透明であるが、有機 層 12から放出される光は、トランジスタ 25が配置された基板 11側ではなぐ透明電 極膜 15側へ放出されるので、この有機 EL装置 10の輝度は高い。  In general, members (wirings, electrodes, and the like) forming the transistor 25 are opaque, but light emitted from the organic layer 12 is not reflected on the substrate 11 side on which the transistor 25 is disposed, but on the transparent electrode film 15 side. The organic EL device 10 has high brightness because the light is emitted to the device.
[0045] 尚、能動領域 20にある部材、例えば下部電極膜 21や絶縁層 29の上に反射性の ある反射部材を配置しておけば、有機層 12から基板 11側に向力つて放射される光 は反射部材で反射され、透明電極膜 15側へ放出されることになるから、有機 EL装置 10の輝度をより高くすることができる。  If a reflective member having a reflective property is arranged on a member in the active region 20, for example, on the lower electrode film 21 or the insulating layer 29, radiation is emitted from the organic layer 12 toward the substrate 11 side. The reflected light is reflected by the reflection member and emitted to the transparent electrode film 15 side, so that the luminance of the organic EL device 10 can be further increased.
[0046] 基板 11も特に限定されるものではなぐガラス基板に例示される透明基板もしくは セラミック基板等その他の不透明基板を用いることができる。有機層 12で発光した光 を、トランジスタ 25が形成された基板 11とは反対側に放出させる所謂トップエミッショ ン型の有機 EL装置 10の場合には、基板 11は透明でなくてもよい。基板 11に透明基 板を用いれば、有機層 12で発光する光をキャップ 30側と基板 11側の両方に放出す ることち可會である。  The substrate 11 is not particularly limited, and a transparent substrate exemplified by a glass substrate or another opaque substrate such as a ceramic substrate can be used. In the case of a so-called top emission type organic EL device 10 that emits light emitted from the organic layer 12 to the side opposite to the substrate 11 on which the transistor 25 is formed, the substrate 11 may not be transparent. If a transparent substrate is used for the substrate 11, light emitted from the organic layer 12 can be emitted to both the cap 30 side and the substrate 11 side.
[0047] 能動領域 20に形成する下部電極膜 21やトランジスタ 25も特に限定されるものでは ない。以上は 1つの下部電極膜 21に対し、 1個のトランジスタ 25を配置する場合につ V、て説明したが、 1つの下部電極膜 21に対し複数個のトランジスタを設けてもよ!、。  The lower electrode film 21 and the transistor 25 formed in the active region 20 are not particularly limited. Although the above description has been made on the case where one transistor 25 is arranged for one lower electrode film 21, a plurality of transistors may be provided for one lower electrode film 21.
[0048] 以上は、下部電極膜 21を行列状に複数個配置し、各下部電極膜 21にトランジスタ 25を設置する所謂アクティブマトリックス型の有機 EL装置について説明したが、本発 明はこれに限定されるものではなぐ能動領域 20に直線状の下部電極膜を互いに略 並行に配置し、能動領域 20上に直線状の透明電極膜を下部電極膜と直交するよう に配置し、透明電極膜と下部電極膜とが交差する位置で、有機層 12が発光する所 謂単純マトリクス型の有機 EL装置も本発明には含まれる。この場合も、透明電極膜 上に透明な吸水層を設けることで、有機層 12への水分の浸入を防止することができ る。 In the above, a so-called active matrix type organic EL device in which a plurality of lower electrode films 21 are arranged in a matrix and a transistor 25 is provided on each lower electrode film 21 has been described, but the present invention is not limited to this. A linear lower electrode film is arranged in the active area 20 substantially parallel to the active area 20 and a linear transparent electrode film is formed on the active area 20 so as to be orthogonal to the lower electrode film. The present invention also includes a so-called simple matrix organic EL device in which the organic layer 12 emits light at a position where the transparent electrode film and the lower electrode film cross each other. Also in this case, by providing a transparent water-absorbing layer on the transparent electrode film, it is possible to prevent water from entering the organic layer 12.
[0049] 以上は有機層 12が単層構造である場合について説明したが、有機層が、厚さ方向 に、電孔輸送層、発光層、電子輸送層等の複数層が積層されて形成される場合も本 発明には含まれる。  [0049] Although the case where the organic layer 12 has a single-layer structure has been described above, the organic layer is formed by laminating a plurality of layers such as a hole transport layer, a light emitting layer, and an electron transport layer in the thickness direction. The present invention also includes the case where a
[0050] また、互いに隣接する複数の下部電極膜 21を 1組の発光単位とし、発光単位を構 成する下部電極膜 21上に、赤、青、緑等の異なる色の光を発光する有機層をそれぞ れ設け、電圧を印加する下部電極膜 21を選択することで、所望の色の有機層 12を 発光させれば、画像情報をカラー表示することができる。  Further, a plurality of lower electrode films 21 adjacent to each other are used as one set of light-emitting units, and an organic light-emitting device that emits light of different colors such as red, blue, green, etc. By providing the respective layers and selecting the lower electrode film 21 to which a voltage is applied, by causing the organic layer 12 of a desired color to emit light, image information can be displayed in color.
[0051] また、各有機層 12の発光色が同じ場合であっても、有機層 12の上に異なる色の力 ラーフィルターを設け、所望の色のカラーフィルターが位置する有機層 12を発光させ ることで、画像情報をカラー表示することもできる。  Further, even when the emission colors of the organic layers 12 are the same, color filters of different colors are provided on the organic layers 12 so that the organic layers 12 where the color filters of the desired colors are located emit light. Thus, the image information can be displayed in color.
[0052] 以上は、有機 EL装置を画像情報を表示する表示装置として用いる場合にっ ヽて 説明したが、本発明はこれに限定されず、各下部電極膜 21に一斉に電圧を印加し、 有機層 12の広 、範囲を発光させれば、発光装置として用いることができる。  Although the above description has been given of the case where the organic EL device is used as a display device for displaying image information, the present invention is not limited to this. If the organic layer 12 emits light over a wide area, it can be used as a light emitting device.
[0053] 透明電極膜 15の種類や厚さも特に限定されるものではないが、例えば、 Liと, Caと , Mgと, Agとからなる群より選択されるいずれか 1種類の金属材料を含有する膜が、 厚さ lOnm以上 15nm以下(100〜15θΑ)、より好ましくは厚さ 12nm (120A)で形 成されたものを用いることができる。透明電極膜 15の抵抗値を下げるため、透明電極 膜 15の表面に InZnO膜等の透明導電膜を蒸着により形成することもできる。  [0053] The type and thickness of the transparent electrode film 15 are not particularly limited either. For example, the transparent electrode film 15 contains any one metal material selected from the group consisting of Li, Ca, Mg, and Ag. A film formed with a thickness of lOnm or more and 15 nm or less (100 to 15θΑ), more preferably a thickness of 12 nm (120 A) can be used. In order to reduce the resistance value of the transparent electrode film 15, a transparent conductive film such as an InZnO film can be formed on the surface of the transparent electrode film 15 by vapor deposition.
[0054] 吸水層 17の膜厚も特に限定されるものではないが、吸水層 17の膜厚が 5nm未満 では吸水性が不十分であり、 20nmを超えると光の透過率が下がる恐れがあるので、 その膜厚は 5nm以上 20nm以下であることが好ましい。  The thickness of the water-absorbing layer 17 is not particularly limited, but if the thickness of the water-absorbing layer 17 is less than 5 nm, the water absorption is insufficient, and if it exceeds 20 nm, the light transmittance may decrease. Therefore, the thickness is preferably 5 nm or more and 20 nm or less.
[0055] 吸水層 17を構成する物質は吸水性を有し、かつ、透明な吸水材料であれば特に 限定されるものではなぐ透過率 Z屈折率が、キャップ 30に用いられる物質 (例えば ガラス)と同等のもので構成することがより好ましい。例えば、キャップ 30がガラスから なる場合には、ガラスと屈折率 Z透過率が同等であって、かつ吸水性を有する物質( 例えば MgO等)を用いることが好ましい。吸水層の成膜方法は蒸着法に限定されず 、スパッタ法等、他の成膜方法によっても形成することができる。 The substance constituting the water-absorbing layer 17 is water-absorbing and is not particularly limited as long as it is a transparent water-absorbing material. The substance having a transmittance Z and a refractive index used for the cap 30 (eg, glass) It is more preferable to configure the same as the above. For example, if the cap 30 is made of glass In such a case, it is preferable to use a substance (for example, MgO or the like) having the same refractive index Z transmittance as that of glass and having water absorption. The method for forming the water-absorbing layer is not limited to the vapor deposition method, and the water-absorbing layer can be formed by another film-forming method such as a sputtering method.
[0056] 吸水層 17をスパッタ法で形成する場合、透明電極膜 15および有機層 12にダメー ジを与えないように、 0. InmZ秒以上 0. 2nmZ秒以下(lAZs以上 2AZs以下) のスパッタ速度で成膜することが望ま ヽ When the water-absorbing layer 17 is formed by a sputtering method, the sputtering speed is set to 0.2 to 0.2 nmZ (lAZs to 2AZs) so as not to damage the transparent electrode film 15 and the organic layer 12.成膜
吸水層 17の形状も特に限定されるものではな 、。吸水層 17が絶縁性を十分に有 し、かつ、有機層 12の有機材料との化学的反応性が低い吸収材料で構成されてい るのであれば、透明電極膜 15の側面及び有機層 12の側面を覆うように吸水層 17を 形成してちょい。  The shape of the water absorbing layer 17 is not particularly limited. If the water absorbing layer 17 has sufficient insulating properties and is made of an absorbing material having low chemical reactivity with the organic material of the organic layer 12, the side surface of the transparent electrode film 15 and the organic layer 12 A water absorbing layer 17 is formed to cover the side surface.
[0057] キャップ 30を構成する物質は、光 (特に可視光)を透過する素材であれば特に限定 されず、ガラスや透明榭脂 (例えばアクリル榭脂)を用いることができる。また、キヤッ プ 30全体が透明である必要もなぐ少なくとも能動領域 20上に位置する部分が透明 であればょ 、。またキャップ 30の形状も特に限定されるものではな 、。  [0057] The material constituting the cap 30 is not particularly limited as long as it is a material that transmits light (particularly, visible light), and glass or transparent resin (for example, acrylic resin) can be used. Also, it is not necessary that the entire cap 30 be transparent, and at least the portion located on the active area 20 is transparent. Also, the shape of the cap 30 is not particularly limited.
[0058] 以上は、透明電極膜 15上に吸水層 17と封止層 18を形成する場合について説明し た力 これらの層の形成順序はこれに限定されるものではない。具体的には、透明電 極膜 15の上に封止層 18を形成し、封止層 18上に吸水層 17を形成してもよい。更に 、透明電極膜 15の上に封止層 18と吸水層 17と封止層 18を記載した順番に積層し てもよい。封止層 18と吸水層 17の数と、積層の順番は特に限定されるものではない  In the above, the description has been given of the case where the water absorbing layer 17 and the sealing layer 18 are formed on the transparent electrode film 15. The order of forming these layers is not limited to this. Specifically, the sealing layer 18 may be formed on the transparent electrode film 15, and the water absorbing layer 17 may be formed on the sealing layer 18. Further, the sealing layer 18, the water absorbing layer 17, and the sealing layer 18 may be laminated on the transparent electrode film 15 in the order described. The number of the sealing layers 18 and the water absorbing layers 17 and the order of lamination are not particularly limited.
[0059] 封止層 18を構成する物質は、透光性が高!、物質であれば SiONに限定されるもの ではなぐ SiO等の他の物質で構成することも可能であり、またその成膜方法も特に The material constituting the sealing layer 18 has a high translucency! If it is a material, it is not limited to SiON. It is also possible to use another material such as SiO. Especially the membrane method
2  2
限定されるものではない。  It is not limited.
[0060] また、封止層 18は SiONと SiOの組み合わせでも良い。具体的には、透明電極膜 The sealing layer 18 may be a combination of SiON and SiO. Specifically, the transparent electrode film
2  2
15の上に、 SiONを主成分とする第一の封止層と、 SiOを主成分とする第二の封止  Above 15, a first sealing layer mainly composed of SiON and a second sealing layer mainly composed of SiO
2  2
層と、 MgOを主成分とする吸水層 17を設けてもよい。第一、第二の封止層と、吸水 層 17を積層する順番は特に限定されるものではな 、。  A layer and a water absorbing layer 17 containing MgO as a main component may be provided. The order of laminating the first and second sealing layers and the water absorbing layer 17 is not particularly limited.
[0061] MgO層(吸水層)をスパッタで形成する場合には、 MgO層をスパッタで形成する前 に、透明電極膜 15上に封止層 18を形成することで、透明電極膜 15及び有機層 12 へのスパッタによる影響を抑えることができる。 When the MgO layer (water absorbing layer) is formed by sputtering, before the MgO layer is formed by sputtering. In addition, by forming the sealing layer 18 on the transparent electrode film 15, the influence of sputtering on the transparent electrode film 15 and the organic layer 12 can be suppressed.
キャップ 30を基板 11に固定する接着剤榭脂 31は、アクリル榭脂に限定されるもの ではなぐ紫外線硬化型の榭脂としては、例えばウレタン榭脂ゃエポキシ榭脂を用い ることもできる。また、接着剤榭脂 31は、紫外線硬化型のものに限定されず、熱硬化 型等種々のものを用いることができる。更に、接着剤榭脂 31に、熱可塑性榭脂等の 他の榭脂や、充填剤、紫外線吸収剤、老化防止剤、着色剤等の添加剤を添加したも のを用いてもよい。乾燥剤 32の形状や設置場所も特に限定されるものではなぐ能 動領域 20よりも外側であれば、例えばキャップ 30の内側側面に設置することもできる  The adhesive resin 31 for fixing the cap 30 to the substrate 11 is not limited to an acrylic resin, but may be, for example, urethane resin or epoxy resin as an ultraviolet curable resin. Further, the adhesive resin 31 is not limited to the ultraviolet curing type, and various types such as a thermosetting type can be used. Further, a resin obtained by adding other resins such as a thermoplastic resin and additives such as a filler, an ultraviolet absorber, an antioxidant, and a coloring agent to the adhesive resin 31 may be used. The shape and location of the desiccant 32 are not particularly limited.If it is outside the active area 20, for example, it can be installed on the inner side surface of the cap 30.

Claims

請求の範囲 The scope of the claims
[1] 基板と、  [1] a substrate,
前記基板上に配置され、電気素子と下部電極膜とが形成された能動領域と、 前記能動領域上に配置された有機層と、  An active region disposed on the substrate, on which an electric element and a lower electrode film are formed, and an organic layer disposed on the active region,
前記有機層上に配置された透明電極膜とを有し、  Having a transparent electrode film disposed on the organic layer,
前記電気素子を導通すると、前記下部電極膜と、前記透明電極膜との間に位置す る前記有機層に電流が流れ、  When the electrical element is turned on, a current flows through the organic layer located between the lower electrode film and the transparent electrode film,
前記有機層の前記電流が流れた部分が発光するように構成された有機 EL装置で あって、  An organic EL device configured to emit light at a portion of the organic layer where the current flows, and
前記透明電極膜上には透明な吸水性物質を主成分とする吸水層が配置され、 前記有機層で発光した光は、前記透明電極膜と、前記吸水層とを透過して外部に 放出される有機 EL装置。  A water-absorbing layer mainly composed of a transparent water-absorbing substance is disposed on the transparent electrode film, and light emitted from the organic layer is emitted to the outside through the transparent electrode film and the water-absorbing layer. Organic EL device.
[2] 前記吸水層は MgOからなる吸水性物質を含有する請求項 1記載の有機 EL装置。 2. The organic EL device according to claim 1, wherein the water-absorbing layer contains a water-absorbing substance made of MgO.
[3] 前記吸水層はスパッタリングにより形成された請求項 1又は請求項 2のいずれか 1 項記載の有機 EL装置。 3. The organic EL device according to claim 1, wherein the water absorbing layer is formed by sputtering.
[4] 前記吸水層の膜厚は 5nm以上 20nm以下にされた請求項 1記載の有機 EL装置。 4. The organic EL device according to claim 1, wherein the water absorbing layer has a thickness of 5 nm or more and 20 nm or less.
[5] 前記吸水層上には透明な封止層が配置され、 [5] A transparent sealing layer is disposed on the water absorbing layer,
前記吸水層と前記有機層は、前記封止層と前記基板とで取り囲まれた請求項 1記 載の有機 EL装置。  The organic EL device according to claim 1, wherein the water absorbing layer and the organic layer are surrounded by the sealing layer and the substrate.
[6] 前記封止層は窒酸ィ匕シリコンと酸ィ匕シリコンのいずれか一方又は両方を含有する 請求項 5記載の有機 EL装置。  6. The organic EL device according to claim 5, wherein the sealing layer contains one or both of silicon nitride and silicon nitride.
[7] 前記封止層上には透明な容器が配置され、 [7] A transparent container is disposed on the sealing layer,
前記封止層と、前記吸水層と、前記有機層は前記容器と前記基板とで取り囲まれ た請求項 5又は請求項 6のいずれ力 1項記載の有機 EL装置。  7. The organic EL device according to claim 5, wherein the sealing layer, the water absorbing layer, and the organic layer are surrounded by the container and the substrate.
[8] 前記容器と前記基板との間であって、前記能動領域よりも外側の位置に乾燥剤が 配置された請求項 7記載の有機 EL装置。 8. The organic EL device according to claim 7, wherein a desiccant is disposed between the container and the substrate and outside the active area.
PCT/JP2005/008682 2004-05-17 2005-05-12 Organic el device WO2005112516A1 (en)

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EP1814185A3 (en) * 2006-01-27 2011-07-27 Samsung Mobile Display Co., Ltd. Organic light emitting display and method of fabricating the same
JP2014157664A (en) * 2013-02-14 2014-08-28 Toppan Printing Co Ltd Sheet sealing material, organic electroluminescent panel, method for manufacturing sheet sealing material, and method for manufacturing organic electroluminescent panel
CN111864118A (en) * 2020-07-31 2020-10-30 京东方科技集团股份有限公司 Display device, display panel and manufacturing method thereof

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JP5185598B2 (en) * 2007-11-06 2013-04-17 株式会社ジャパンディスプレイイースト Organic EL display device and manufacturing method thereof

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JP2003323975A (en) * 2002-04-30 2003-11-14 Seiko Epson Corp Electrooptical device and electronic equipment
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JP2003338367A (en) * 2002-05-21 2003-11-28 Seiko Instruments Inc El element sealing plate, el display device, and manufacturing method therefor

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JP2003323975A (en) * 2002-04-30 2003-11-14 Seiko Epson Corp Electrooptical device and electronic equipment
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EP1814185A3 (en) * 2006-01-27 2011-07-27 Samsung Mobile Display Co., Ltd. Organic light emitting display and method of fabricating the same
JP2014157664A (en) * 2013-02-14 2014-08-28 Toppan Printing Co Ltd Sheet sealing material, organic electroluminescent panel, method for manufacturing sheet sealing material, and method for manufacturing organic electroluminescent panel
CN111864118A (en) * 2020-07-31 2020-10-30 京东方科技集团股份有限公司 Display device, display panel and manufacturing method thereof
CN111864118B (en) * 2020-07-31 2024-04-05 京东方科技集团股份有限公司 Display device, display panel and manufacturing method thereof

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