WO2005022658A3 - Verbindung mit mindestens einer speichereinheit aus organischem speichermaterial, insbesondere zur verwendung in cmos-strukturen, halbleiterbauelement und ein verfahren zur herstellung eines halbleiterbauelementes - Google Patents

Verbindung mit mindestens einer speichereinheit aus organischem speichermaterial, insbesondere zur verwendung in cmos-strukturen, halbleiterbauelement und ein verfahren zur herstellung eines halbleiterbauelementes Download PDF

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Publication number
WO2005022658A3
WO2005022658A3 PCT/DE2004/001936 DE2004001936W WO2005022658A3 WO 2005022658 A3 WO2005022658 A3 WO 2005022658A3 DE 2004001936 W DE2004001936 W DE 2004001936W WO 2005022658 A3 WO2005022658 A3 WO 2005022658A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor component
compound
producing
unit consisting
memory unit
Prior art date
Application number
PCT/DE2004/001936
Other languages
English (en)
French (fr)
Other versions
WO2005022658A2 (de
Inventor
Marcus Halik
Hagen Klauk
Guenter Schmid
Ute Zschieschang
Original Assignee
Infineon Technologies Ag
Marcus Halik
Hagen Klauk
Guenter Schmid
Ute Zschieschang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Marcus Halik, Hagen Klauk, Guenter Schmid, Ute Zschieschang filed Critical Infineon Technologies Ag
Priority to EP04786208A priority Critical patent/EP1658646A2/de
Publication of WO2005022658A2 publication Critical patent/WO2005022658A2/de
Publication of WO2005022658A3 publication Critical patent/WO2005022658A3/de
Priority to US11/364,134 priority patent/US20060211257A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/50—Bistable switching devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices

Abstract

Die Erfindung betrifft eine Verbindung mit mindestens einer Speichereinheit aus organischem Speichermaterial, insbesondere zur Verwendung in CMOS-Strukturen, gekennzeichnet durch a) mindestens eine erste Ankergruppe (1) mit einer reaktiven Gruppe zur kovalenten Bindung an eine erste Elektrode (10), insbesondere eine Bottom-Elektrode einer Speicherzelle (102) und b) mindestens eine zweiten Ankergruppe (2) mit einer reaktiven Gruppe zur Bindung an eine zweite Elektrode (20), insbesondere eine Top-Elektrode einer Speicherzelle (102). Die Erfindung betrifft auch ein Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelementes. Damit liegen eine Verbindung, ein Halbleiterbauelement und ein Verfahren zur Herstellung des Halbleiterbauelementes vor, mit denen es effizient möglich ist, molekulare Speicherschichten auf konventionellen Substraten zu realisieren.
PCT/DE2004/001936 2003-08-29 2004-08-27 Verbindung mit mindestens einer speichereinheit aus organischem speichermaterial, insbesondere zur verwendung in cmos-strukturen, halbleiterbauelement und ein verfahren zur herstellung eines halbleiterbauelementes WO2005022658A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04786208A EP1658646A2 (de) 2003-08-29 2004-08-27 Verbindung mit mindestens einer speichereinheit aus organischem speichermaterial, insbesondere zur verwendung in cmos-strukturen, halbleiterbauelement und ein verfahren zur herstellung eines halbleiterbauelementes
US11/364,134 US20060211257A1 (en) 2003-08-29 2006-02-28 Compound, semiconductor component, and method for producing a semiconductor component comprising an organic memory material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10340610.7 2003-08-29
DE10340610A DE10340610B4 (de) 2003-08-29 2003-08-29 Verbindung mit mindestens einer Speichereinheit aus organischem Speichermaterial, insbesondere zur Verwendung in CMOS-Strukturen, Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelementes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/364,134 Continuation US20060211257A1 (en) 2003-08-29 2006-02-28 Compound, semiconductor component, and method for producing a semiconductor component comprising an organic memory material

Publications (2)

Publication Number Publication Date
WO2005022658A2 WO2005022658A2 (de) 2005-03-10
WO2005022658A3 true WO2005022658A3 (de) 2005-11-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/001936 WO2005022658A2 (de) 2003-08-29 2004-08-27 Verbindung mit mindestens einer speichereinheit aus organischem speichermaterial, insbesondere zur verwendung in cmos-strukturen, halbleiterbauelement und ein verfahren zur herstellung eines halbleiterbauelementes

Country Status (4)

Country Link
US (1) US20060211257A1 (de)
EP (1) EP1658646A2 (de)
DE (1) DE10340610B4 (de)
WO (1) WO2005022658A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG173529A1 (en) 2009-02-04 2011-09-29 Univ Singapore Soluble polymer with multi-stable electric states and products comprising such polymer
JP2023081627A (ja) * 2021-12-01 2023-06-13 キオクシア株式会社 有機分子メモリ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993025003A1 (en) * 1992-06-01 1993-12-09 Yale University Sub-nanoscale electronic systems, devices and processes
WO2001027972A2 (en) * 1999-09-20 2001-04-19 Yale University Molecular scale electronic devices
WO2002103753A2 (en) * 2000-11-01 2002-12-27 Myrick James J Nanoelectronic interconnection and addressing
WO2003005369A2 (de) * 2001-07-05 2003-01-16 Infineon Technologies Ag Molekularelektronik-anordnung und verfahren zum herstellen einer molekularelektronik-anordnung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475341A (en) * 1992-06-01 1995-12-12 Yale University Sub-nanoscale electronic systems and devices
DE10324388A1 (de) * 2003-05-28 2004-12-30 Infineon Technologies Ag Schaltungselement mit einer ersten Schicht aus einem elektrisch isolierenden Substratmaterial und Verfahren zur Herstellung eines Schaltungselements
DE10329247A1 (de) * 2003-06-24 2005-01-27 Infineon Technologies Ag Verbindung zur Bildung einer selbstorganisierenden Monolage, eine Schichtstruktur, ein Halbleiterbauelement und ein Verfahren zur Herstellung einer Schichtstruktur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993025003A1 (en) * 1992-06-01 1993-12-09 Yale University Sub-nanoscale electronic systems, devices and processes
WO2001027972A2 (en) * 1999-09-20 2001-04-19 Yale University Molecular scale electronic devices
WO2002103753A2 (en) * 2000-11-01 2002-12-27 Myrick James J Nanoelectronic interconnection and addressing
WO2003005369A2 (de) * 2001-07-05 2003-01-16 Infineon Technologies Ag Molekularelektronik-anordnung und verfahren zum herstellen einer molekularelektronik-anordnung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
C. YAN, M. ZHARNIKOV, A. GÖLZHÄUSER, M. GRUNZE: "Preparation and Characterization of Self-Assembled Monolayers on Indium Tin Oxide", LANGMUIR, vol. 16, no. 15, 25 July 2000 (2000-07-25), American Chem.Soc. USA, pages 6208 - 6215, XP002341753 *
CH. ZUBRÄGEL, C. DEUPER, F. SCHNEIDER, M. NEUMANN, M. GRUNZE, A. SCHERTEL, CH. WÖLL: "The presence of two different sulfur species in self-assembled films of n-alkanethiols on Au and Ag surfaces", CHEM PHYS. LETT., vol. 238, 2 June 1995 (1995-06-02), Stevenage, GB, pages 308 - 312, XP002341754 *

Also Published As

Publication number Publication date
DE10340610A1 (de) 2005-04-07
WO2005022658A2 (de) 2005-03-10
US20060211257A1 (en) 2006-09-21
DE10340610B4 (de) 2007-06-06
EP1658646A2 (de) 2006-05-24

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