WO2005015623A3 - Reduction of defects in conductive layers during electroplating - Google Patents

Reduction of defects in conductive layers during electroplating Download PDF

Info

Publication number
WO2005015623A3
WO2005015623A3 PCT/US2004/025538 US2004025538W WO2005015623A3 WO 2005015623 A3 WO2005015623 A3 WO 2005015623A3 US 2004025538 W US2004025538 W US 2004025538W WO 2005015623 A3 WO2005015623 A3 WO 2005015623A3
Authority
WO
WIPO (PCT)
Prior art keywords
power
supply
defects
reduction
conductive layers
Prior art date
Application number
PCT/US2004/025538
Other languages
French (fr)
Other versions
WO2005015623A2 (en
Inventor
Laila Baniahmad
Efrain Velazquez
Bulent M Basol
Original Assignee
Nutool Inc
Laila Baniahmad
Efrain Velazquez
Bulent M Basol
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nutool Inc, Laila Baniahmad, Efrain Velazquez, Bulent M Basol filed Critical Nutool Inc
Publication of WO2005015623A2 publication Critical patent/WO2005015623A2/en
Publication of WO2005015623A3 publication Critical patent/WO2005015623A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention is a method and system to reduce defects in conductive surfaces during electrochemical processes. The system includes a first power supply and a second power supply. The first powers supply is configured to supply a first power between a conductive surface of a workpiece and an electrode of the system. The second power supply is configured to supply a second power between the conductive surface and the electrode when a switching unit switches from the first power from the first power supply to the second power from the second power supply in response to the conductive surface contacting the process solution.
PCT/US2004/025538 2003-08-07 2004-08-05 Reduction of defects in conductive layers during electroplating WO2005015623A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/637,243 2003-08-07
US10/637,243 US20050029106A1 (en) 2003-08-07 2003-08-07 Reduction of defects in conductive layers during electroplating

Publications (2)

Publication Number Publication Date
WO2005015623A2 WO2005015623A2 (en) 2005-02-17
WO2005015623A3 true WO2005015623A3 (en) 2005-04-14

Family

ID=34116561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/025538 WO2005015623A2 (en) 2003-08-07 2004-08-05 Reduction of defects in conductive layers during electroplating

Country Status (3)

Country Link
US (1) US20050029106A1 (en)
TW (1) TW200524015A (en)
WO (1) WO2005015623A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070238265A1 (en) * 2005-04-05 2007-10-11 Keiichi Kurashina Plating apparatus and plating method
US11225727B2 (en) 2008-11-07 2022-01-18 Lam Research Corporation Control of current density in an electroplating apparatus
US10011917B2 (en) 2008-11-07 2018-07-03 Lam Research Corporation Control of current density in an electroplating apparatus
US9028666B2 (en) * 2011-05-17 2015-05-12 Novellus Systems, Inc. Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath
US11674235B2 (en) * 2018-04-11 2023-06-13 Hutchinson Technology Incorporated Plating method to reduce or eliminate voids in solder applied without flux

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1050902A2 (en) * 1999-05-03 2000-11-08 Motorola, Inc. Method for forming a copper layer over a semiconductor wafer
US6274023B1 (en) * 1999-07-07 2001-08-14 Technic Inc. Apparatus and method for electroplating wafers, substrates and other articles
US20010015321A1 (en) * 1998-10-26 2001-08-23 Reid Jonathan D. Electroplating process for avoiding defects in metal features of integrated circuit devices
EP1160846A2 (en) * 2000-05-02 2001-12-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
US6440291B1 (en) * 2000-11-30 2002-08-27 Novellus Systems, Inc. Controlled induction by use of power supply trigger in electrochemical processing
US6554976B1 (en) * 1997-03-31 2003-04-29 Tdk Corporation Electroplating apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4120759A (en) * 1976-08-10 1978-10-17 New Nippon Electric Company, Ltd. Constant current density plating method
US5007993A (en) * 1989-06-20 1991-04-16 Hull Harry F Electrolytic processing apparatus and method with time multiplexed power supply
US6395101B1 (en) * 1999-10-08 2002-05-28 Semitool, Inc. Single semiconductor wafer processor
US6440297B1 (en) * 2000-12-18 2002-08-27 General Electric Company System and method for determining noble metal concentrations in reactor coolant streams
US6551487B1 (en) * 2001-05-31 2003-04-22 Novellus Systems, Inc. Methods and apparatus for controlled-angle wafer immersion

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6554976B1 (en) * 1997-03-31 2003-04-29 Tdk Corporation Electroplating apparatus
US20010015321A1 (en) * 1998-10-26 2001-08-23 Reid Jonathan D. Electroplating process for avoiding defects in metal features of integrated circuit devices
EP1050902A2 (en) * 1999-05-03 2000-11-08 Motorola, Inc. Method for forming a copper layer over a semiconductor wafer
US6274023B1 (en) * 1999-07-07 2001-08-14 Technic Inc. Apparatus and method for electroplating wafers, substrates and other articles
EP1160846A2 (en) * 2000-05-02 2001-12-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
US6440291B1 (en) * 2000-11-30 2002-08-27 Novellus Systems, Inc. Controlled induction by use of power supply trigger in electrochemical processing

Also Published As

Publication number Publication date
WO2005015623A2 (en) 2005-02-17
TW200524015A (en) 2005-07-16
US20050029106A1 (en) 2005-02-10

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