WO2005014753A1 - Non-polymeric organic particles for chemical mechanical planarization - Google Patents
Non-polymeric organic particles for chemical mechanical planarization Download PDFInfo
- Publication number
- WO2005014753A1 WO2005014753A1 PCT/US2003/039840 US0339840W WO2005014753A1 WO 2005014753 A1 WO2005014753 A1 WO 2005014753A1 US 0339840 W US0339840 W US 0339840W WO 2005014753 A1 WO2005014753 A1 WO 2005014753A1
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- WO
- WIPO (PCT)
- Prior art keywords
- abrasive
- slurry
- composition according
- particles
- abrasive composition
- Prior art date
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- 239000011146 organic particle Substances 0.000 title claims abstract description 39
- 239000000126 substance Substances 0.000 title claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 59
- 239000004094 surface-active agent Substances 0.000 claims abstract description 20
- 239000007800 oxidant agent Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000002738 chelating agent Substances 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 239000008234 soft water Substances 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims description 121
- 239000002245 particle Substances 0.000 claims description 97
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 45
- 229920000877 Melamine resin Polymers 0.000 claims description 44
- -1 alkyl carboxylic acid Chemical class 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Chemical class 0.000 claims description 12
- 239000002184 metal Chemical class 0.000 claims description 12
- 239000003082 abrasive agent Substances 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 125000002924 primary amino group Chemical class [H]N([H])* 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 4
- 239000002736 nonionic surfactant Substances 0.000 claims description 4
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 claims description 4
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 239000008139 complexing agent Substances 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 150000007974 melamines Chemical class 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 3
- 150000002978 peroxides Chemical class 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- YEDUAINPPJYDJZ-UHFFFAOYSA-N 2-hydroxybenzothiazole Chemical compound C1=CC=C2SC(O)=NC2=C1 YEDUAINPPJYDJZ-UHFFFAOYSA-N 0.000 claims description 2
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 125000003368 amide group Chemical class 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- MXJIHEXYGRXHGP-UHFFFAOYSA-N benzotriazol-1-ylmethanol Chemical compound C1=CC=C2N(CO)N=NC2=C1 MXJIHEXYGRXHGP-UHFFFAOYSA-N 0.000 claims description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 2
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- DKSMCEUSSQTGBK-UHFFFAOYSA-M bromite Chemical compound [O-]Br=O DKSMCEUSSQTGBK-UHFFFAOYSA-M 0.000 claims 2
- 150000005207 1,3-dihydroxybenzenes Chemical class 0.000 claims 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N Resorcinol Natural products OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims 1
- 229910005091 Si3N Inorganic materials 0.000 claims 1
- 125000003275 alpha amino acid group Chemical group 0.000 claims 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims 1
- 239000004202 carbamide Substances 0.000 claims 1
- 229910001919 chlorite Inorganic materials 0.000 claims 1
- 229910052619 chlorite group Inorganic materials 0.000 claims 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical class O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 claims 1
- 150000002989 phenols Chemical class 0.000 claims 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims 1
- 150000003672 ureas Chemical class 0.000 claims 1
- 238000005498 polishing Methods 0.000 abstract description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 31
- 239000010949 copper Substances 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 30
- 229910052802 copper Inorganic materials 0.000 description 29
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 28
- 239000000463 material Substances 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 229910001868 water Inorganic materials 0.000 description 12
- 239000004471 Glycine Substances 0.000 description 11
- 239000002270 dispersing agent Substances 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 9
- 239000012964 benzotriazole Substances 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000009472 formulation Methods 0.000 description 8
- 230000003993 interaction Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 235000014113 dietary fatty acids Nutrition 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000194 fatty acid Substances 0.000 description 5
- 229930195729 fatty acid Natural products 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000003701 mechanical milling Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- NJYZCEFQAIUHSD-UHFFFAOYSA-N acetoguanamine Chemical compound CC1=NC(N)=NC(N)=N1 NJYZCEFQAIUHSD-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 159000000000 sodium salts Chemical class 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 150000001412 amines Chemical group 0.000 description 3
- VPSRQEHTHIMDQM-FKLPMGAJSA-N benazepril hydrochloride Chemical compound Cl.C([C@@H](C(=O)OCC)N[C@@H]1C(N(CC(O)=O)C2=CC=CC=C2CC1)=O)CC1=CC=CC=C1 VPSRQEHTHIMDQM-FKLPMGAJSA-N 0.000 description 3
- 235000010980 cellulose Nutrition 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000001238 wet grinding Methods 0.000 description 3
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000001768 carboxy methyl cellulose Substances 0.000 description 2
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 2
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 description 2
- 239000007859 condensation product Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 235000019329 dioctyl sodium sulphosuccinate Nutrition 0.000 description 2
- YHAIUSTWZPMYGG-UHFFFAOYSA-L disodium;2,2-dioctyl-3-sulfobutanedioate Chemical compound [Na+].[Na+].CCCCCCCCC(C([O-])=O)(C(C([O-])=O)S(O)(=O)=O)CCCCCCCC YHAIUSTWZPMYGG-UHFFFAOYSA-L 0.000 description 2
- IVJISJACKSSFGE-UHFFFAOYSA-N formaldehyde;1,3,5-triazine-2,4,6-triamine Chemical compound O=C.NC1=NC(N)=NC(N)=N1 IVJISJACKSSFGE-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 235000010755 mineral Nutrition 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- KVBGVZZKJNLNJU-UHFFFAOYSA-N naphthalene-2-sulfonic acid Chemical compound C1=CC=CC2=CC(S(=O)(=O)O)=CC=C21 KVBGVZZKJNLNJU-UHFFFAOYSA-N 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 159000000001 potassium salts Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000000527 sonication Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- RZRNAYUHWVFMIP-KTKRTIGZSA-N 1-oleoylglycerol Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(O)CO RZRNAYUHWVFMIP-KTKRTIGZSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 238000013313 FeNO test Methods 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229910002567 K2S2O8 Inorganic materials 0.000 description 1
- 229920001732 Lignosulfonate Polymers 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002675 Polyoxyl Polymers 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910034327 TiC Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RPBJCMGPMCAUSR-UHFFFAOYSA-O azanium;cerium(3+);tetranitrate Chemical compound [NH4+].[Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O RPBJCMGPMCAUSR-UHFFFAOYSA-O 0.000 description 1
- VBICKXHEKHSIBG-UHFFFAOYSA-N beta-monoglyceryl stearate Natural products CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 229920003090 carboxymethyl hydroxyethyl cellulose Polymers 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical class [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- DKSRNSSBMXOZAJ-UHFFFAOYSA-N dodecanoic acid;ethene Chemical compound C=C.CCCCCCCCCCCC(O)=O DKSRNSSBMXOZAJ-UHFFFAOYSA-N 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- HBRNMIYLJIXXEE-UHFFFAOYSA-N dodecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCN HBRNMIYLJIXXEE-UHFFFAOYSA-N 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 description 1
- 229940094506 lauryl betaine Drugs 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- RZRNAYUHWVFMIP-UHFFFAOYSA-N monoelaidin Natural products CCCCCCCCC=CCCCCCCCC(=O)OCC(O)CO RZRNAYUHWVFMIP-UHFFFAOYSA-N 0.000 description 1
- AYOOGWWGECJQPI-NSHDSACASA-N n-[(1s)-1-(5-fluoropyrimidin-2-yl)ethyl]-3-(3-propan-2-yloxy-1h-pyrazol-5-yl)imidazo[4,5-b]pyridin-5-amine Chemical compound N1C(OC(C)C)=CC(N2C3=NC(N[C@@H](C)C=4N=CC(F)=CN=4)=CC=C3N=C2)=N1 AYOOGWWGECJQPI-NSHDSACASA-N 0.000 description 1
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 description 1
- CFYGEIAZMVFFDE-UHFFFAOYSA-N neodymium(3+);trinitrate Chemical compound [Nd+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CFYGEIAZMVFFDE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011242 organic-inorganic particle Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- YXJYBPXSEKMEEJ-UHFFFAOYSA-N phosphoric acid;sulfuric acid Chemical compound OP(O)(O)=O.OS(O)(=O)=O YXJYBPXSEKMEEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229940083542 sodium Drugs 0.000 description 1
- BTURAGWYSMTVOW-UHFFFAOYSA-M sodium dodecanoate Chemical compound [Na+].CCCCCCCCCCCC([O-])=O BTURAGWYSMTVOW-UHFFFAOYSA-M 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 229940082004 sodium laurate Drugs 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- RYYKJJJTJZKILX-UHFFFAOYSA-M sodium octadecanoate Chemical compound [Na+].CCCCCCCCCCCCCCCCCC([O-])=O RYYKJJJTJZKILX-UHFFFAOYSA-M 0.000 description 1
- OGRPJZFGZFQRHZ-UHFFFAOYSA-M sodium;4-octoxy-4-oxo-3-sulfobutanoate Chemical compound [Na+].CCCCCCCCOC(=O)C(S(O)(=O)=O)CC([O-])=O OGRPJZFGZFQRHZ-UHFFFAOYSA-M 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- KMIOJWCYOHBUJS-HAKPAVFJSA-N vorolanib Chemical compound C1N(C(=O)N(C)C)CC[C@@H]1NC(=O)C1=C(C)NC(\C=C/2C3=CC(F)=CC=C3NC\2=O)=C1C KMIOJWCYOHBUJS-HAKPAVFJSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Definitions
- the present invention relates to an abrasive composition for chemical mechanical planarization (CMP), which contains non-polymeric organic particles as abrasive materials.
- CMP chemical mechanical planarization
- the invention also pertains to methods of preparing non- polymeric organic particles, methods of making abrasive compositions, which can be used in CMP applications, and CMP methods utilizing the same.
- CMP is a commonly used technology in the semiconductor industry.
- the pure substrate surface and complex surface of semiconductor wafer, dielectric layer, conducting wire and barrier materials in the integrated circuits have to be polished to achieve a certain degree of planarity, which is extremely important to reach a high density of integrated circuits.
- CMP technology consists of four major specific technologies including slurry, pad, polisher and post-cleaning device.
- the CMP slurry provides a chemical environment to wet and adjust the interaction between abrasive, pad and the wafer surface, and also moderates the mechanical force on the polishing surface.
- the slurry plays a key role in CMP process and determines the production efficiency and product quality.
- the present invention relates generally to the preparation of semiconductor devices and more particularly to improved slurry compositions for the chemical- mechanical planarization (CMP) of metal (e.g., Cu) layers and barrier materials (e.g., Ta, TaN, etc.) and dielectric materials for their polishing.
- a semiconductor wafer typically includes a substrate, such as a silicon wafer, on which a plurality of integrated circuits have been formed.
- CMP processes are being employed. In general, CMP involves pressing a semiconductor wafer against a moving polishing surface that is wetted with a chemically reactive, abrasive slurry.
- slurries either are acidic or basic, and generally contain alumina, silica, zirconium oxide, magnesium oxide, or cerium oxide abrasive particles.
- the polishing surface usually is a planar pad made of a relatively soft, porous material, such as polyurethane.
- the pad usually is mounted on a planar platen. Continuous pad devices also are being tested. Systems devoid of a slurry where the pad contains the abrasive also are being used.
- Integrated circuits are chemically and physically integrated into a substrate by patterning regions in the substrate and layers on the substrate.
- the layers generally are formed of various materials having either a conductive, insulating, or semiconducting nature.
- barrier materials or barriers are used to prevent the migration of ions and adhesion promoters.
- U.S. Patent No. 4,959,113 discloses a method of polishing metal surfaces with aqueous slurries.
- the slurry composition comprises water, abrasive such as SiO 2) AI 2 O 3 , TiO 2 , ZrO 2 , CeO 2 , SnO 2 , SiC, TiC, and a salt containing any cation of group IIA, MIA, IVA, or IVB and any anion of chloride, bromide, iodide, nitrate, sulfate phosphate, or perchlorate.
- the patent also discloses a pH range of 1-6 adjusted with mineral acids.
- U.S. Patent No. 5,084,071 discloses the CMP slurry, which comprises abrasive particles, e.g.
- U.S. Patent No. 5,1 14,437 discloses the CMP slurry for polishing aluminum substrate, which contains an alumina with an average particle size of 0.2-0.5 ⁇ m, and a polishing accelerator from the group consisting of chromium (III) nitrate, lanthanum nitrate, ammonium cerium (III) nitrate and neodymium nitrate.
- a polishing accelerator from the group consisting of chromium (III) nitrate, lanthanum nitrate, ammonium cerium (III) nitrate and neodymium nitrate.
- 5,209,816 discloses a method for polishing Al- or Ti- containing metal layer with the CMP slurry, which contains inorganic abrasive materials, 0.1-20 % by volume of H 3 PO 4 and 1-30 % by volume of H 2 O 2 .
- U.S. Patent No. 5,225,034 discloses the CMP slurry for polishing copper layer on a semiconductor wafer to produce copper wire on the wafer.
- the slurry comprises AgNO 3 , inorganic abrasive particles and an oxidant selected from H 2 O 2 , HCIO, KCIO, K 2 MnO 4) or CH 3 COOOH.
- 5,340,370 discloses the CMP slurry for polishing tungsten or tungsten nitride film, which comprises an oxidizing agent such as potassium ferricyanide, inorganic abrasive particles, water, and has a pH in 2-4.
- U.S. Patent No. 5,366,542 discloses a CMP slurry comprising alumina abrasive particles, chelating agent selected from the group consisting of polyaminocarboxylic acid (EDTA) and sodium or potassium salts, and further may contain beohmite or aluminum salt.
- U.S. Patent No. 5,391 ,258 discloses a CMP slurry for polishing silicon, silica or silicate composite.
- the slurry comprises, in addition to inorganic abrasive particles, hydrogen peroxide and potassium hydrogen phthalate.
- U.S. Patent No. 5,516,346 discloses CMP slurry for titanium film. The slurry contains potassium fluoride, inorganic abrasive particles such as silica, and pH ⁇ 8.
- U.S. Patent No. 5,527,423 discloses the slurry for polishing a metal layer, which comprises an oxidizing agent such as iron nitrate, alumina particles containing at least 50 % gamma phase, nonionic surfactants such as polyalkyl siloxanes, or polyoxyalkylene ethers.
- 6,171 ,352 discloses a CMP slurry which contains, in addition to inorganic abrasive particles, an abrasion accelerator, wherein the abrasion accelerator comprises monocarboxy group- or an amino group- containing compound and optionally a nitrate salt, also a viscosity modifier such as polyacrylic acid or its copolymer.
- U.S. Patent No. 6,258,721 discloses an innovative CMP slurry of using diamond particles as an abrasive material, comprising ingredients such as an oxidizing agent, chelating agent, surfactant and others.
- CMP slurries employ inorganic particles as abrasive materials and fail to adequately control dishing and erosion, corrosion, defects of the surface, polishing rate and selectivity among different materials on the surface.
- Another approach to preparing CMP slurries is to use organic polymeric particles as the abrasive material.
- organic polymeric particle containing abrasive materials are disclosed in U.S. Patent No. 6,620,215.
- U.S. Patent No. 6,576,554 teaches a slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains a composite particle formed by thermocompressing polymeric organic particles and inorganic particles.
- none of these patents teach or suggest the use of organic non-polymeric abrasive particles in the CMP slurries nor their unexpectedly superior properties.
- the present invention provides novel CMP compositions and slurries that use organic abrasive particles therein.
- the invention further utilizes non-polymeric organic particles to control the interaction between particles and the wafer surface that offers unique properties for CMP applications that are not available with conventional inorganic abrasive particles.
- the particles in a CMP slurry have at least three functions: serving as an abrasive to cut through the surface to-be-polished, as a carrier to deliver a desired ingredient and/or take away abraded materials from the surface that is being polished, and an agent that modifies the rheological behavior of the slurry.
- abrasive materials have been chosen based on relative hardness.
- the abrasive particles commonly used are polymeric inorganic particles or polymeric organic particles including silica, alumina, ceria, polystyrene, resin, etc.
- a review of the prior art shows that non- polymeric soft organic particles have not been considered as a potential key component in slurry formulation at all.
- the present invention is based on the discovery that these non-polymeric organic particles possess unexpectedly advantageous properties and value in CMP applications and in CMP performance.
- One important advantage of using soft non-polymeric organic particles is the reduction in defects formed during CMP.
- the soft non-polymeric organic particles have the ability to provide unsurpassed high selectivity in removal rate for copper over barrier and dielectric materials.
- yet another unexpected benefit of a composition and slurry incorporating non- polymeric organic particles is that the non-polymeric organic particles are insensitive towards pressure for material removal rate (MRR). This is particularly valuable as today's CMP community faces tough challenges in reducing down- force without sacrificing removal rate.
- MRR material removal rate
- the abrasive particles can be significantly low in density, which leads to a much more stable composition and slurry for CMP applications. When particles are soft in nature, their ability to act as an abrasive diminishes, i.e., the removal rate decreases.
- the rheological behavior of the slurry can be modified.
- the composition of the slurry can be modified to increase the friction force thereby increasing the removal rate with little dependency on the down force.
- MRR C x P + K
- P the down force or pressure
- K is a chemical/mechanical modifier
- C is often referred as Preston Constant.
- a Preston constant of greater than 1000 A/psi is often encountered for most abrasive slurries.
- a low down force process is preferred.
- CMP slurry that has a zero or small Preston constant is desirable.
- the rheological behavior can be very different from those using classic hard inorganic abrasive particles.
- the organic particles may have very high deformation probability or elasticity, the Preston constant may be much smaller.
- the removal mechanism for a slurry using non-polymeric particles is mainly controlled by friction force alteration or chemical interaction between the particle and the surface to be polished, there is a surprising reduction in down force.
- An embodiment of the present invention is a chemical mechanical planarization abrasive composition, which comprises non-polymeric organic particles as an abrasive material and a solvent in the form of a slurry.
- the non-polymeric organic abrasive particle has an average particle size of less than 1 ⁇ m.
- the average particle size is 0.05-0.75 ⁇ m.
- the average particle size is 0.2-0.5 ⁇ m.
- the particles can be reduced in size by various techniques, such as wet grinding, with or without the use of dispersants. The technical advantage to using small particle sizes are less scratches, and more contact area so that the end result is a more efficient polishing and better surface quality.
- the particle size of the non- polymeric organic abrasive particles has a narrow size distribution.
- the size distribution is less than ⁇ 75%. More preferably, the size distribution is less than ⁇ 60%. Most preferably, the size distribution is less than ⁇ 50%.
- the advantages for having a narrow particle size distribution are two fold. One is that a narrow particle size distribution can be directly correlated to a low over sized particle count. Over sized (>1 ⁇ m) particles have been linked to various surface defects such as scratches, pull out, and delamination. The other advantage for a narrow particle size distribution is the performance consistency. More specifically, the CMP performance can be more directly and consistently correlated to the particle size and other physical properties.
- the chemical structure of the non-polymeric organic abrasive particles is chosen to provide enough intermolecular forces such as hydrogen bonding to hold the particle essentially structurally intact, and to have sufficient surface functional groups that can interact with the surface to be polished.
- the particles can be tailored to selectively remove one type of material over another type of material on the surface of the substrate.
- the type of compound used in the organic abrasive particles that is preferred has at least one of amine and amido functionalities. Most preferably, the compound is at least one selected from the group consisting of melamine, melamine derivatives such as acetoguanamine, benzoguanamine, dicyandiamide and salts thereof.
- non-polymeric means that the compound does not contain units which are covalently linked.
- the molecular weight of the non-polymeric compound is less than 1000 g/mole.
- the molecular weight of the non- polymeric compound is 75-250 g/mole.
- melamine and its derivatives are excellent examples.
- the strong hydrogen bonding among the molecules hold the particles together to form well defined particles.
- the amino functionality on the surface provides strong interaction with copper oxide and copper ions.
- the structural variation of melamine, and melamine derivates can fine-tune such intermolecular interactions and hence the performance of the slurry.
- the present invention discloses methods of preparing such non-polymeric particles in compositions and slurries for CMP applications.
- the invention also discloses the advantages of using such non-polymeric organic particles in the present inventive compositions, slurries, methods and processes.
- the non-polymeric organic particles "consist essentially of the compound(s) (such as melamine).
- the phrase "consist essentially of means that the non-polymeric organic particles are greater than 80 w/w% pure in composition.
- the solid particles may contain impurities such as solvent groups crystallized as part of the lattice.
- the non-polymeric organic particles have a greater than 90 w/w% purity.
- the non-polymeric organic particles have a greater than 95 w/w% purity.
- the w/w% values are based on the total weight of the particles.
- the size and size distribution of the non-polymeric organic particles can be controlled using grinding techniques which are standard in the industry. The grinding may be performed under wet or dry conditions. In performing a wet grinding, it is preferable to use a dispersing agent/surfactant. Any of nonionic, anionic, cationic and amphoteric dispersing agents/surfactants can be used.
- anionic dispersing agents/surfactants are fatty acid salts such as sodium stearate, sodium oleate and sodium laurate; alkylarylsulfonic acid salts such as sodium dodecylbenzenesulfonate; alkyl or alkenyl sulfate ester salts such as sodium lauryl sulfate; alkyl sulfosuccinate ester salts such as sodium monooctyl sulfosuccinate, sodium dioctyl sulfosuccinate (CYTEC OT-75) and sodium polyoxyethylenelauryl sulfosuccinate; sodium salt of special aromatic sulfonic acid-formalin condensate such as the sodium salt of a condensation product of beta-naphthalene sulfonic acid with formaldehyde (DAXAD 19); polyoxyalkylene alkyl or alkenyl ether sulfate ester salts such as sodium polyoxyethylene lauryl
- examples of usable nonionic dispersing agents/surfactants are polyoxyalkylene alkyl or alkenyl ethers such as polyoxyethylene lauryl ether and polyoxyethylene stearyl ether; polyoxyalkylene alkyl aryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monostearate and sorbitan trioleate; polyoxyalkylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate; polyoxyalkylene fatty acid esters such as polyoxyl ethylene monolaurate and polyoxyethylene monostearate; glycerol fatty acid esters such as oleic acid monoglyceride and stearic acid monoglyceride; polyoxyethylene polyoxyproylene block copolymer; etc.
- alkylamine salts such as, for example, laurylamine acetate
- quaternary ammonium salts such as, for example, lauryl trimethylammonium chloride and alkylbenzyldimethylammonium chloride
- polyoxyethylalkylamine etc.
- alkyl betaines such as laurylbetaine, etc.
- a saturated or unsaturated dialkyl ester sulfosuccinate such as sodium dioctyl sulfosuccinate or a sodium salt of a condensation product of beta-naphthalene sulfonic acid with formaldehyde.
- Another method of controlling the size and size distribution of the non- polymeric organic particles is using hydrodynamic cavitation as described in U.S. Patent No. 5,931 ,771 to Kozyuk (and the references cited therein). This technique is based on the controlled collapse of vapor bubbles so that the shock waves cause particles to collide and break down.
- the slurry may further comprise at least one of a surfactant, an oxidizing agent, a chelating agent and a passivation agent.
- the slurry has 0.001-20 w/w% of non- polymeric organic particles.
- the slurry has 0.005-15 w/w% of non- polymeric organic particles.
- the slurry has 0.01-10 w/w% of non- polymeric organic particles.
- the w/w% values are based on the total weight of the slurry.
- the solvent used in the slurry is preferably "soft" water.
- the term "soft" as used herein means that the water has less than 500 ppm heavy metal impurities.
- the soft water has less than 50 ppm heavy metal impurities. Salts and other impurities that do not significantly affect the polishing process of the abrasive slurry, do not necessarily need to be removed from the water prior to its use.
- the surfactant is used, it is generally added in a concentration of
- the surfactant is added in a concentration of 0.05-3 w/w%. More preferably, the concentration is 0.05-1 w/w%.
- the surfactant can be either ionic or non-ionic, however, a non-ionic surfactant is preferred. Any non-ionic surfactant known in the art can be used. Examples of surfactants which can be used include alkylated polyethylene oxide, alkylated cellulose, alkylated polyvinyl alcohol, alkyl or aryl carboxylic acid, sulfate or ammonium salt and polystearic ether.
- the oxidizing agent used in the inventive abrasive composition can be any suitable commercial oxidant, such as peroxides, chlorates, chlorites, perchlorates, bromates, bromites, perbromate, nitrates, persulfates, iodates, permanganates, chromates and hypochlorites or any mixture thereof.
- suitable commercial oxidant such as peroxides, chlorates, chlorites, perchlorates, bromates, bromites, perbromate, nitrates, persulfates, iodates, permanganates, chromates and hypochlorites or any mixture thereof.
- Examples include H 2 O 2 , CIO 3) FeNO 3 ) 3 , K 2 S 2 O 8 KIO 3 , K 2 MnO 4 , and CH3COOOH.
- the concentration of the oxidizing agent depends upon the strength of the oxidizing agent.
- the oxidizing agent When used, it is added to the slurry in a concentration of 0.01-10 w/w% based on the weight of the slurry composition. Preferably, the concentration is 0.05-10 w/w%. Most preferably, the concentration is 0.1-5 w/w%. It is highly desirable to improve the selectivity of metal planarization as much as possible. Further improvements in CMP planarization of dielectric/metal composite structures can be obtained by the addition of a chelating agent to the slurry which is selective for the metal component of interest. This results in a further increase in the corrosion rate of the metal phase and increased selectivity of metal versus dielectric phase removal, making the planarization process much more efficient.
- the chelating agent to be used in the present invention is a compound which has a multidentate ligand to form a chelate compound with a metal ion.
- a water soluble chelating agent is generally used in the present invention, and is preferably a polyamine, polyaminocarboxylic acid and/or an amino acid. The most preferred being an amino acid.
- the polyamine include ethylenediamine, 2,2'-bipyridine, and diethylenetriamine.
- Examples of the polyaminocarboxylic acid include nitrilotriacetic acid, ethylenediamine-tetraacetic acid, and diethylenetriaminepentaacetic acid, and sodium or potassium salts thereof.
- Glycine is an example of an amino acid chelating agent.
- the chelating agent When the chelating agent is used, it is added in an amount of 0.05-10w/w% based on the weight of the slurry composition. Preferably the concentration is 0.1- 7 w/w%. Most preferably, the concentration is 0.1-5 w/w%. With an excessively small amount, the chelating agent does not produce the intended effect of the invention; and with an excessively large amount, the chelating agent is wasteful without any additional effect.
- the CMP slurry may further comprise a passivating agent. When the passivating agent is used, it is generally added in the range of 0.0001-10 w/w% based on the weight of the slurry composition. Preferably, the passivation agent is in a concentration of 0.001-5 w/w%.
- an effective passivating agent is a phosphate.
- the phosphate may be, for example, dilute phosphoric acid or ammonium phosphate which is added in an effective amount sufficient for passivation.
- the passivation agent can also be an organic compound containing two or more hetero-elements such as nitrogen, sulfur, phosphorus, and oxygen. In general, all benzotriazole (BTA) or benzothiazole compounds can be used as copper film passivating agents.
- the CMP slurry may also contain inorganic abrasive particles.
- the inorganic abrasive particles are added in a concentration of 0.1-10 w/w% based on the weight of the slurry composition.
- the concentration is 0.5-5 w/w%. More preferably, the concentration is 0.5-2 w/w%.
- the abrasive agent can be formed of any inorganic particles, as long as the hardness is in a range of 1 ,200 to 10,000 kg/mm 2 (as measured by atomic force microscopy).
- the inorganic abrasive agent includes at least one of Si ⁇ 2 , AI 2 O 3 , ZrO 2 , Ce ⁇ 2 , SiC, Fe 2 O 3 , Ti ⁇ 2 , Si 3 N 4 and diamond.
- the CMP slurry may further comprise polymeric abrasive particles. These polymers are prepared from a conventional process such as that described in U.S. Patent Nos. 6,620,215, 6,245,853 and 6,576,554 which are herein incorporated by reference in their entirety.
- the polymeric abrasive particles can be added in a concentration of 0.1-20 w/w% based on the weight of the slurry composition.
- the polymeric abrasive particles are added in a concentration of 1-15 w/w%. More preferably, the concentration is 1-5 w/w%.
- the organic resin particles have an average particle size in a range of 0.05-5 microns.
- the average particle size is 0.05-1 micron.
- the average particle size in a range of 0.1-0.5 micron.
- the hydrogen ion concentration of the CMP slurry is pH 1-13, preferably 2- 12, and most preferably 4-10. The pH is adjusted with an acid or base.
- Acids include any mineral acids such as sulfuric acid, hydrochloric acid, and nitric acid, or organic acids such as acetic acid.
- the base is an alkaline earth metal hydroxide, ammonia or an organic amine.
- the pH can also be maintained by adding a buffer solution.
- the polishing composition of the present invention may be incorporated with the following known additives depending upon the type of object to be polished or upon the conditions for the polishing operation.
- the additives include water-soluble alcohols such as ethanol, propanol, and ethylene glycol; organic polyanionic substances such as lignin sulfonate, carboxymethylcellulose salt, and polyacrylate; celluloses such as cellulose, carboxymethyl cellulose, and hydroxyethyl cellulose; and inorganic salts such as ammonium sulfate, ammonium chloride, ammonium acetate and magnesium nitrate.
- the polishing composition of the present invention may be produced as a stock of high concentration which is diluted at the time of use. The above- mentioned concentration is applied to the polishing composition ready to use.
- the polishing composition of the present invention is used for the polishing of metal, glass, and plastics.
- KPS system Potassium Persulfate
- Formulated amount of other ingredients such as glycine and potassium persulfate, are added into the slurry during stirring.
- the slurry pH is adjusted by using potassium hydroxide solution for the desired range.
- a typical primary slurry is formulated with the following composition: 0.1-1 potassium persulfate w/w % , 0.1 - 1 w/w % glycine, 0.1- 2 w/w % melamine, 0.1 w/w% surfactant, and deionized (Dl) water.
- Disc Polishing A disc of 1" diameter by 0.25 " thickness purchased from Kamis Inc, is mounted onto a single side polishing machine (Struers Labopol 5 Grinding Table, Serial # 5200825 and Struers LaboForce 3 Force Arm, Serial #5210461 , manufactured by Struers Inc, Westlake, Ohio) which has a soft polyurethane polishing pad mounted onto its lower side. Polishing is conducted for three minutes using a pressure of 6 psi with a slurry flow rate of 60 ml/minute. The disk and the pad have a relative rotating speed of 150 rpm. After polishing, the disk is removed from the polisher and ultrasonic cleaning is performed to clean the polished surface of the disk. The weight loss of the disk is measured and the average material removal rate (MRR) is calculated.
- MRR average material removal rate
- Polishing of 8" blanket wafer Eight inch blanket wafers (from Montco) are polished on Westech 372M under the following polishing conditions; Down Force (4psi), slurry flow rate (200 ml/min), platen speed and carrier speed (75/65 rpm being the maximum, respectively). Removal rate is calculated by measuring resistivity at different points on wafer surface (then convert resistivity to thickness) before and after polishing. After polishing surface quality is evaluated by using a Horizon Non-contact optical profilometer.
- Polishing 8" patterned wafer Eight-inch patterned wafers (SeMaTech 854) are polished with Westech 372-M. The polishing conditions are as follows: wafer pressure (4 Psi); slurry flow rate (200 ml/min); platen speed and carrier speed (75/65 rpm being the maximum, respectively). After polishing, the dishing and erosion are measured using a high-resolution stylus profilometer, Ambios XP-2. The surface quality of the copper, tantalum and oxide wafer is evaluated using a Horizon Non-contact optical profilometer. The scanning size is 268800 x 268800 nm.
- Example-1 Melamine particles were reduced in size to less than one micron by various techniques, such as wet grinding, with and without the use of dispersants.
- the following table shows different samples, with corresponding process conditions:
- Dispersant A is a sulfosuccinate ester salt
- Dispersant B is a sodium salt of aromatic sulfonic acid-formalin condensate
- the prepared organic particles have an average particle size less than 500 nm and narrow particle size distribution. It is also determined that there is a minimal number of particles that are significantly larger than 1000 nm.
- the prepared aqueous slurry is stable against settling and oxidization. They are easily diluted and mixed with other required CMP ingredients under moderate mixing conditions.
- the copper material removal rate was significantly enhanced when a small amount of melamine particles was added. It was found that the material removal rate decreases slightly when melamine solid content was significantly greater than 0.1%.
- Table 4 MRR Selectivity Of Copper, Ta, Silicon Oxide, And SiC For Slurries Formulated Based On Melamine Particles.
- Example-6 One of the most important performance characteristics of a copper CMP slurry is its ability to obtain low dishing values after the over plated/deposited copper has been completely cleared or removed and over-polished at least for an additional 20% of the polishing time.
- One of the commonly used patterned wafers in the copper CMP community is the SEMATECH 854 patterned wafer. To evaluate for dishing, one looks to the 50um lines in 50% metal density arrays. The industry target for today's patterned layout and design is to obtain dishing values below 500A after extensive optimization on both slurry formulation and processing parameters on the polishers. The final dishing values can be heavily dependant upon the extensiveness of such optimization and the quality of the polishers.
- dishing values are considered to be excellent for the best abrasive slurries in comparison.
- the dishing values are excellent at a pressure (4 psi) that is comparable to those used for classic slurries.
- the ability to obtain low dishing values and long over polishing window is often directly related to the so-called planarization efficiency.
- a good polishing slurry should have planarization efficiency above 90% for the initial step height reduction stage.
- a "long over polishing window" means that even if the prescribed polishing time is exceeded, there is essentially no damage to the material beneath the copper.
- Step height reduction refers to the relationship between the "global” surface area and a purposefully “depressed” area. A long “over polishing window” and good “step height reduction efficiency” are both favorable goals.
- Table 5 Representative Patterned Wafer Polishing Results For A Slurry Based On Hydrogen Peroxide And Melamine Particles 3 .
- the particle size of the melamine was reduced by mechanical milling.
- Example-8 It is expected that the results obtained and described in the previous examples can be obtained with organic particles that have the same or similar chemical/physical/mechanical characteristics in relation to melamine.
- Table 7 shows the results obtained with slurries that utilize organic particles that are melamine derivatives or analogs. It can be seen from the results that the invention can be extended to other similar organic materials. It should be transparent to those skilled in the art that further improvement upon the results obtained and described in the above examples can be made by using some of those analogs or derivatives as abrasive particles with careful consideration, extensive optimization, and structural design.
- Polisher Struers Labopol 5 Grinding Table Disc: 1" Copper disc.
- the acetoguanamine was used in the powder form as purchased.
- Example 9 Samples were prepared with the combination of non-polymeric organic abrasive particles and polymeric organic abrasive particles.
- the results in Table 8 show that slurries prepared with this combination of abrasive particles have high MRR's and high SER's.
- the ratio of MRR to SER is a measure of planarization efficiency.
Abstract
Description
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Also Published As
Publication number | Publication date |
---|---|
CN1860198B (en) | 2010-06-16 |
CN1860198A (en) | 2006-11-08 |
KR20060115712A (en) | 2006-11-09 |
AU2003297104A1 (en) | 2005-02-25 |
KR101123210B1 (en) | 2012-03-19 |
US20050005525A1 (en) | 2005-01-13 |
JP2007535118A (en) | 2007-11-29 |
US7037351B2 (en) | 2006-05-02 |
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