WO2005013323A2 - Methods and apparatus for fabricating solar cells - Google Patents
Methods and apparatus for fabricating solar cells Download PDFInfo
- Publication number
- WO2005013323A2 WO2005013323A2 PCT/US2004/023200 US2004023200W WO2005013323A2 WO 2005013323 A2 WO2005013323 A2 WO 2005013323A2 US 2004023200 W US2004023200 W US 2004023200W WO 2005013323 A2 WO2005013323 A2 WO 2005013323A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ink
- solar cell
- ink pattern
- layer
- oxide layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000002210 silicon-based material Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 3
- 239000011253 protective coating Substances 0.000 claims description 2
- 239000000976 ink Substances 0.000 description 52
- 239000011230 binding agent Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates generally to solar cells, and more particularly but not exclusively to methods and apparatus for fabricating solar cells.
- Solar cells are well known devices for converting solar radiation to electrical energy. They may be fabricated on a semiconductor wafer using semiconductor processing technology. Generally speaking, a solar cell may be fabricated by forming p-doped and n-doped regions in a silicon substrate. Solar radiation impinging on the solar cell creates electrons and holes that migrate to the p-doped and n-doped regions, thereby creating voltage differentials between the doped regions. In a backside-contact solar cell, the doped regions are coupled to metal contacts on the backside of the solar cell to allow an external electrical circuit to be coupled to and be powered by the solar cell. Backside- contact solar cells are disclosed in U.S. Patent Nos. 5,053,083 and 4,927,770, which are both incorporated herein by reference in their entirety.
- a solar cell is fabricated using an ink pattern as a mask for a processing step.
- the ink pattern may comprise an ink that is substantially devoid of particles that may scratch a surface on which the ink pattern is formed.
- the ink pattern may be formed by screen printing.
- the ink pattern is formed on an oxide layer and comprises an ink that is substantially free of silicon dioxide particles.
- the ink pattern may be employed as a mask in an etching or deposition step, for example.
- FIG. 1 schematically illustrates a technique for forming a mask on a solar cell in accordance with an embodiment of the present invention.
- FIGS. 2A-2E schematically illustrate the fabrication of a solar cell in accordance with an embodiment of the present invention.
- a solar cell is fabricated using ink patterns as masks for etching steps.
- An ink pattern may comprise an ink that is substantially free of particles that may scratch a layer of material directly underneath the ink pattern.
- the ink is devoid of particles that are as hard or harder than the layer of material underneath the ink pattern. This prevents the ink from scratching the surface of the underlying material, which could result in defects that could adversely affect the operation and performance of the solar cell.
- FIG. 1 schematically illustrates a technique for forming a mask on a solar cell in accordance with an embodiment of the present invention.
- a solar cell 100 is in the process of being fabricated.
- the fabrication of solar cells is also described in the following commonly-assigned disclosures, which are incorporated herein by reference in their entirety: U.S. Application No. 10/412,638, entitled “Improved Solar Cell and Method of Manufacture,” filed on April 10, 2003 by William P. Mulligan, Michael J. Cudzinovic, Thomas Pass, David Smith, Neil Kaminar, Keith Mclntosh, and Richard M. Swanson; and U.S. Application No.
- screen printer 120 may be a commercially available screen printer such as those of the type available from affiliated Manufacturing, Inc. (AMI) of North Branch, New Jersey or Baccini Spa of Italy.
- screen printer 120 comprises the AMI 3230 screen printer from affiliated Manufacturing, Inc.
- Other screen printers may also be used without detracting from the merits of the present invention.
- solar cell 100 is placed on a stage and under a screen 114.
- Screen 114 contains a pattern to be printed on solar cell 100.
- the ink pattern serves as a mask for an etching step.
- the ink pattern may have to be cured.
- the ink pattern may be cured by exposing it to ultraviolet light (UV-cured ink) or heat (thermally- cured ink).
- Inks employed in screen printing are thixotropic in that they flow while pressure is applied to push them through the screen and then firm up after the pressure is released. Most inks thus include a binding agent to allow them to firm up.
- Some binding agents have a tendency to damage a surface of the solar cell on which the ink pattern is formed.
- inks that employ silicon dioxide as a binding agent have a tendency to scratch the surface of an oxide layer.
- scratches on the surface of an oxide layer may not present a significant problem in some applications, these scratches may eventually result in pits that could damage a solar cell.
- ink 110 is "particle-free" in that it is substantially devoid of particles that may scratch a surface on solar cell 100 on which the ink pattern is formed.
- FIGS. 2A-2D schematically illustrate the fabrication of a solar cell in accordance with an embodiment of the present invention.
- an oxide layer 213 is formed on a silicon material 212.
- Oxide layer 213 may comprise thermally grown oxide.
- silicon material 212 comprises a silicon substrate.
- silicon material 212 may also be a layer of silicon material that overlies other layers of materials not specifically shown.
- the solar cell being fabricated is a backside-contact solar cell.
- the side of silicon material 212 facing oxide layer 213 is the backside of the solar cell, while the other side of silicon material 212 is the "sun" or front side of the solar cell.
- Electrical connections to the p-doped and n-doped regions of the solar cell may be formed through the backside of the solar cell.
- the aforementioned U.S. Application Nos. 10/412,638 and 10/412,711 describe backside-contact solar cells that may benefit from embodiments of the present invention. It should be understood, however, that the present invention is not so limited and may be employed in the fabrication of solar cells in general.
- particle-free ink 110 is formed on oxide layer 213.
- particle-free ink 110 is substantially devoid of silicon dioxide particles to prevent scratching of underlying oxide layer 213.
- etchants of a subsequently performed silicon etch may penetrate these scratches and form pits on the surface of oxide layer 213.
- particle-free ink 110 is of the same type as the Coates ER- 3070 ink available from Coates Screen of St. Charles, Illinois.
- the composition of particle-free ink 110 may be varied depending on the material on which particle-free ink 110 is applied.
- particle-free ink 110 is substantially devoid of particles that are as hard or harder than the underlying material.
- oxide layer 213 is etched using the ink pattern comprising particle-free ink 110 as a mask.
- Oxide layer 213 may be wet etched using buffered hydrofluoric acid.
- the ink pattern is stripped off oxide layer 213.
- the ink pattern comprises the Coates ER-3070 ink
- the ink pattern may be removed by dipping it in a caustic solution.
- silicon material 212 is subsequently etched using oxide layer 213 as a mask.
- Silicon material 212 may be etched using conventional silicon etchants.
- silicon material 212 may be wet etched by dipping it in concentrated potassium hydroxide (KOH).
- KOH concentrated potassium hydroxide
- the use of particle free ink 110 advantageously helps prevent the ink pattern from damaging the surface of oxide layer 213, thereby helping prevent silicon etchants from forming pits on oxide layer 213 and adversely affecting the operation and performance of the solar cell.
- FIGS. 2A-2E illustrate the use of an ink pattern as a mask for the etching of an oxide layer in a solar cell.
- one of ordinary skill in the art may employ similar ink patterns as masks for etching other types of materials in a solar cell.
- the printing of these ink patterns, along with other solar cell processing techniques, may be employed to complete the fabrication of a solar cell.
- the remaining structures of the solar cell being fabricated may be formed conventionally or as described in U.S. Application Nos. 10/412,638 and 10/412,711.
- the ink patterns disclosed herein may also be employed as masks in solar cell fabrication steps other than etching.
- the ink patterns may be employed as masks for deposition steps including electroplating and spin coating.
- the ink patterns may also be generally employed as a protective coating in other solar cell fabrication steps.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/633,212 US20050022862A1 (en) | 2003-08-01 | 2003-08-01 | Methods and apparatus for fabricating solar cells |
US10/633,212 | 2003-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005013323A2 true WO2005013323A2 (en) | 2005-02-10 |
WO2005013323A3 WO2005013323A3 (en) | 2006-01-26 |
Family
ID=34104539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/023200 WO2005013323A2 (en) | 2003-08-01 | 2004-07-19 | Methods and apparatus for fabricating solar cells |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050022862A1 (en) |
WO (1) | WO2005013323A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007032285A1 (en) | 2007-07-11 | 2009-01-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for manufacturing doped semiconductor components involves providing semiconductor substrate and doping one side of semiconductor substrate with p- or n- doping |
EP2388826A2 (en) | 2010-05-18 | 2011-11-23 | Rohm and Haas Electronic Materials LLC | Method of forming current tracks on semiconductors |
EP2432035A2 (en) | 2010-09-21 | 2012-03-21 | Rohm and Haas Electronic Materials LLC | Improved method of stripping hot melt etch resists from semiconductors |
EP2698831A2 (en) | 2012-08-16 | 2014-02-19 | Rohm and Haas Electronic Materials LLC | Inkjet printable etch resist |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
US20030108664A1 (en) * | 2001-10-05 | 2003-06-12 | Kodas Toivo T. | Methods and compositions for the formation of recessed electrical features on a substrate |
EP1444055A4 (en) * | 2001-10-19 | 2007-04-18 | Superior Micropowders Llc | Tape compositions for the deposition of electronic features |
US7086346B1 (en) * | 2004-09-16 | 2006-08-08 | Van Horn Steven M | Apparatus as a flag or banner pole clip |
KR20090033227A (en) * | 2006-06-19 | 2009-04-01 | 캐보트 코포레이션 | Photovoltaic conductive features and processes for forming same |
US7820540B2 (en) * | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
US7833808B2 (en) * | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
DE102008052660A1 (en) * | 2008-07-25 | 2010-03-04 | Gp Solar Gmbh | Process for producing a solar cell with a two-stage doping |
US7999175B2 (en) * | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
US9150966B2 (en) * | 2008-11-14 | 2015-10-06 | Palo Alto Research Center Incorporated | Solar cell metallization using inline electroless plating |
CN101958361A (en) * | 2009-07-13 | 2011-01-26 | 无锡尚德太阳能电力有限公司 | Method for etching transparent thin-film solar cell component |
DE102011050055A1 (en) | 2010-09-03 | 2012-04-26 | Schott Solar Ag | Process for the wet-chemical etching of a silicon layer |
US8677929B2 (en) * | 2010-12-29 | 2014-03-25 | Intevac, Inc. | Method and apparatus for masking solar cell substrates for deposition |
US8962424B2 (en) | 2011-03-03 | 2015-02-24 | Palo Alto Research Center Incorporated | N-type silicon solar cell with contact/protection structures |
WO2014078011A1 (en) | 2012-11-14 | 2014-05-22 | Sun Chemical Corporation | Compositions and processes for fabrication of rear passivated solar cells |
CN104465881A (en) * | 2014-12-17 | 2015-03-25 | 常州天合光能有限公司 | Implementation method for multi-layer metalized structure of solar battery |
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US4387116A (en) * | 1981-12-28 | 1983-06-07 | Exxon Research And Engineering Co. | Conditioner for adherence of nickel to a tin oxide surface |
US4838952A (en) * | 1988-04-29 | 1989-06-13 | Spectrolab, Inc. | Controlled reflectance solar cell |
US20020000242A1 (en) * | 1996-10-31 | 2002-01-03 | Takeshi Matushiita | Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method |
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US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US5164019A (en) * | 1991-07-31 | 1992-11-17 | Sunpower Corporation | Monolithic series-connected solar cells having improved cell isolation and method of making same |
US5369291A (en) * | 1993-03-29 | 1994-11-29 | Sunpower Corporation | Voltage controlled thyristor |
US5360990A (en) * | 1993-03-29 | 1994-11-01 | Sunpower Corporation | P/N junction device having porous emitter |
US6387726B1 (en) * | 1999-12-30 | 2002-05-14 | Sunpower Corporation | Method of fabricating a silicon solar cell |
US6423568B1 (en) * | 1999-12-30 | 2002-07-23 | Sunpower Corporation | Method of fabricating a silicon solar cell |
US6337283B1 (en) * | 1999-12-30 | 2002-01-08 | Sunpower Corporation | Method of fabricating a silicon solar cell |
US6274402B1 (en) * | 1999-12-30 | 2001-08-14 | Sunpower Corporation | Method of fabricating a silicon solar cell |
US6313395B1 (en) * | 2000-04-24 | 2001-11-06 | Sunpower Corporation | Interconnect structure for solar cells and method of making same |
US6333457B1 (en) * | 2000-08-29 | 2001-12-25 | Sunpower Corporation | Edge passivated silicon solar/photo cell and method of manufacture |
-
2003
- 2003-08-01 US US10/633,212 patent/US20050022862A1/en not_active Abandoned
-
2004
- 2004-07-19 WO PCT/US2004/023200 patent/WO2005013323A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4387116A (en) * | 1981-12-28 | 1983-06-07 | Exxon Research And Engineering Co. | Conditioner for adherence of nickel to a tin oxide surface |
US4838952A (en) * | 1988-04-29 | 1989-06-13 | Spectrolab, Inc. | Controlled reflectance solar cell |
US20020000242A1 (en) * | 1996-10-31 | 2002-01-03 | Takeshi Matushiita | Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007032285A1 (en) | 2007-07-11 | 2009-01-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for manufacturing doped semiconductor components involves providing semiconductor substrate and doping one side of semiconductor substrate with p- or n- doping |
EP2388826A2 (en) | 2010-05-18 | 2011-11-23 | Rohm and Haas Electronic Materials LLC | Method of forming current tracks on semiconductors |
US8470717B2 (en) | 2010-05-18 | 2013-06-25 | Rohm And Haas Electronic Materials Llc | Method of forming current tracks on semiconductors |
EP2432035A2 (en) | 2010-09-21 | 2012-03-21 | Rohm and Haas Electronic Materials LLC | Improved method of stripping hot melt etch resists from semiconductors |
US9130110B2 (en) | 2010-09-21 | 2015-09-08 | Rohm And Haas Electronic Materials Llc | Method of stripping hot melt etch resists from semiconductors |
EP2698831A2 (en) | 2012-08-16 | 2014-02-19 | Rohm and Haas Electronic Materials LLC | Inkjet printable etch resist |
Also Published As
Publication number | Publication date |
---|---|
WO2005013323A3 (en) | 2006-01-26 |
US20050022862A1 (en) | 2005-02-03 |
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