WO2005011110A1 - Absorptive microwave single pole single throw switch - Google Patents
Absorptive microwave single pole single throw switch Download PDFInfo
- Publication number
- WO2005011110A1 WO2005011110A1 PCT/US2004/020334 US2004020334W WO2005011110A1 WO 2005011110 A1 WO2005011110 A1 WO 2005011110A1 US 2004020334 W US2004020334 W US 2004020334W WO 2005011110 A1 WO2005011110 A1 WO 2005011110A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- differential amplifier
- switch circuit
- providing
- amplifier pair
- channel
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45466—Indexing scheme relating to differential amplifiers the CSC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45638—Indexing scheme relating to differential amplifiers the LC comprising one or more coils
Definitions
- ABSORPTIVE MICROWAVE SINGLE POLE SINGLE THROW SWITCH [0001] This present invention relates to microwave switches, and in particular, to absorptive microwave switches.
- Absorptive switches are attractive components for a system designer, as the input, and ideally output, reflection coefficient of the switch remains constant regardless of the state of the switch. This reduces the effects of the switch on system parameters such as frequency pulling of a signal source, or the inducement of other transient effects that can be problematic in very short interval time-based systems.
- absorptive switches One drawback of absorptive switches is that a dummy, or additional load, has to be included in the circuitry to be presented to the input network to absorb any incident energy when the switch is selected to be in a non-transmit or isolated state. This dummy load takes up valuable circuit board space in an integrated circuit (IC) design that directly translates to increased circuit cost and reduced yield.
- IC integrated circuit
- An embodiment of the present invention comprises a switch circuit including a first differential amplifier pair providing a portion of an isolation channel, a second differential amplifier pair providing a portion of a transmit channel, and a third differential amplifier pair providing a control bias for selecting either the transmit channel or the isolation channel.
- An embodiment of the present invention also comprises a method for providing isolation between the input and output of a circuit comprising the steps of providing a first channel including at least one first differential amplifier pair, said first channel providing isolation between the input and output of the circuit, providing a second channel including at least one second differential amplifier pair, said second channel providing coupling between the input and output of the circuit, and providing a control bias which selects one of the first channel or the second channel.
- Figure 1 shows switch circuit according to an exemplary embodiment of the present invention.
- Figure 2 shows the switch circuit of Figure 1 implemented as an integrated circuit.
- Figure 3(a) is a graph showing a frequency versus decibel (dB) response of the input reflection coefficient for the switch circuit of Figure 1 in both the isolated and transmission states.
- Figure 3(b) is a graph showing shows a frequency versus decibel (dB) response of the transmission characteristics for the switch circuit of Figure 1 when the switch circuit is in alternately the isolated and the "transmit" states.
- An embodiment of the present invention comprises an absorptive microwave switch circuit that provides 35 decibels (dB) of isolation between input and output over 15 Gigahertz (GHz)-26GHz range, yet is only 500 micrometers ( ⁇ m) by 250 ⁇ m in size. Since 24GHz has been used recently to provide pulsed radar systems for short-range automotive sensors, the present invention will be particularly applicable to such systems.
- the switch circuit ensures that there is almost no perceptible change in the input reflection coefficient between the transmission or absorptive states. In the transmit state the switch provides gain for the input signal between 14.2GHz and 25.5GHz, and has a ldB loss bandwidth of over 12GHz.
- the present invention will be particularly applicable to automotive sensing systems, which are required to detect objects at distances between 5 centimeters (cm) and 10 meters (m) to 30m, often with a distance resolution of less than 10cm. These requirements translate directly to a minimum inter-pulse period of less than 2 nanoseconds (nS) (correspond to the two-way flight time of a pulse reflected from an object 10cm from the sensor), and a required pulse width of less than 500pS. These design considerations require a circuit which has fast switching.
- nS nanoseconds
- FIG. 1 shows an absorptive single pole single throw (SPST) switch circuit 100 according to an exemplary embodiment of the present invention which includes an input terminal Vj n , and output terminal V ou t. and a control terminal V con troi-
- the switch circuit 100 also includes a first differential amplifier pair 110 including transistors Ql and Q2, a second differential amplifier pair 120 including transistors Q3 and Q4, and a third differential amplifier pair 130 including transistors Q5 and Q6.
- the collectors of each of transistors Ql- Q4 are all coupled to a supply voltage V cc .
- Transistors Q3 and Q4 further include inductors 140, 150 coupled between the collectors and V cc -
- the collector of transistor Q5 is coupled to the emitters of transistors Ql and Q2, and the collector of transistor Q6 is coupled to the emitters of transistors Q3 and Q4.
- the emitters of transistors Q5 and Q6 are coupled to a current source I ee .
- transistor Q6 is biased on by control signal Vcontr o i to select the "transmit" state of the switch 100. This is accomplished by providing a control signal Vco n t ro i which is above the junction voltage of transistor Q6 on the negative side (e.g., -0.7 volts).
- Vco n t ro i which is above the junction voltage of transistor Q6 on the negative side (e.g., -0.7 volts).
- signals entering input terminal V m are coupled to output terminal V ou t-
- the biasing on of transistor Q6 in turn biases on transistors Q3 and Q4, thus creating a signal path from the input terminal Vj n to the output terminal V out at the respective collectors of transistors Q3 and Q4.
- the input signal is transmitted to the output.
- V cont roi selects the "isolation" state of the switch 100 by biasing transistor Q5 on
- signals entering input terminal Vj n are decoupled from output terminal V out .
- this is accomplished by providing a control signal contro i which is above the junction voltage of transistor Q5 on the positive side (e.g., +0.7 volts).
- the biasing on of transistor Q5 in turn biases on transistors Ql and Q2, and thus creates a signal path from the input terminal Vj n to the midpoint between the bases of transistors Q2 and Q3. Accordingly, the input is "isolated" from the output.
- the switch circuit 100 provides for several advantages. First, the control signal V con tr o i applied differentially across transistors Q5 and Q6 allows for easy selection of either the transmission or isolated state. Additionally, the constant current steering between the two differential amplifier pairs 110, 120 ensures extremely high speed switching between the two states, as the switch never has to be depleted of high current densities. In particular, the switch circuit provides a pulse width of approximately 220pS, with rise and fall times around 60pS at 24 GHz.
- the switch circuit 100 may be implemented using any commercially available transistor based semiconductor process, such as a Silicon Germanium (SiGe) process (e.g., Atmel SiGE2basic).
- SiGe Silicon Germanium
- Atmel SiGE2basic a Silicon Germanium process
- FIG. 2 shows a photograph of the switch circuit 100 of Figure 1 implemented in SiGe.
- the switch circuit 100 may be implemented in other substrates as well, such as Silicon Gallium Arsenide (SiGaAs) or Indium Phosphide (InP).
- the switch circuit also includes input and output matching networks (not shown in the idealized circuit diagram of Figure 1) comprising a series of inductors and resistors designed for operation at a center frequency of 24GHz.
- the first and second differential amplifier pairs 110, 120 are disposed adjacent to each other and connected in parallel across an input signal network.
- the collectors of Q3-Q4 are connected to an output-matching network, while the collectors of Ql- Q2 are connected directly together and further connected directly to source voltage V cc .
- the total circuit area of the switch circuit shown in Figure 2 including input and output matching networks and bias circuits is 500 ⁇ m by 250 ⁇ m.
- Figure 3(a) shows the input reflection coefficient of the switch circuit 100 in both its transmission and absorption (isolation) states.
- the difference between the reflection coefficients in each state is extremely small, as the DC current flowing through the network has remained constant.
- RF radiofrequency
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020067000319A KR101105491B1 (en) | 2003-07-07 | 2004-06-23 | Absorptive microwave single pole single throw switch |
JP2006518682A JP2007527650A (en) | 2003-07-07 | 2004-06-23 | Absorbing microwave single pole single throw switch |
DE602004024543T DE602004024543D1 (en) | 2003-07-07 | 2004-06-23 | ABSORPTIVE MICROWAVE SINGLE POLE SINGLE CONTROL SWITCH |
EP04777044A EP1652296B1 (en) | 2003-07-07 | 2004-06-23 | Absorptive microwave single pole single throw switch |
CN200480019549XA CN1820412B (en) | 2003-07-07 | 2004-06-23 | Absorptive microwave single pole single throw switch |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/614,495 | 2003-07-07 | ||
US10/614,495 US6987419B2 (en) | 2003-07-07 | 2003-07-07 | Absorptive microwave single pole single throw switch |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005011110A1 true WO2005011110A1 (en) | 2005-02-03 |
Family
ID=33564381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/020334 WO2005011110A1 (en) | 2003-07-07 | 2004-06-23 | Absorptive microwave single pole single throw switch |
Country Status (7)
Country | Link |
---|---|
US (1) | US6987419B2 (en) |
EP (1) | EP1652296B1 (en) |
JP (1) | JP2007527650A (en) |
KR (1) | KR101105491B1 (en) |
CN (1) | CN1820412B (en) |
DE (1) | DE602004024543D1 (en) |
WO (1) | WO2005011110A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114497928A (en) * | 2022-04-18 | 2022-05-13 | 合肥芯谷微电子有限公司 | Millimeter wave single-pole single-throw switch |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547993B2 (en) * | 2003-07-16 | 2009-06-16 | Autoliv Asp, Inc. | Radiofrequency double pole single throw switch |
EP2122599B1 (en) | 2007-01-25 | 2019-11-13 | Magna Electronics Inc. | Radar sensing system for vehicle |
US20090028216A1 (en) * | 2007-07-26 | 2009-01-29 | M/A-Com, Inc. | Method and apparatus for generating a radio frequency pulse |
US8531209B2 (en) * | 2009-01-16 | 2013-09-10 | Tektronix, Inc. | Multifunction word recognizer element |
US8503593B2 (en) * | 2010-06-23 | 2013-08-06 | Raytheon Company | Waveform generator in a multi-chip system |
KR101440000B1 (en) | 2012-08-29 | 2014-09-12 | 한국과학기술원 | Multifunctional Single-Pole Single-Though pulse modulation switch circuit and driving method Thereof |
CN112838852A (en) * | 2020-12-31 | 2021-05-25 | 重庆百瑞互联电子技术有限公司 | Fully differential single-pole single-throw switch with high isolation and low insertion loss |
US12015430B2 (en) * | 2021-06-09 | 2024-06-18 | Qorvo Us, Inc. | Dynamic band steering filter bank module |
US11916541B2 (en) | 2021-06-09 | 2024-02-27 | Qorvo Us, Inc. | Dynamic band steering filter bank module with passband allocations |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6157257A (en) * | 1999-06-30 | 2000-12-05 | Conexant Systems, Inc. | Low power folding amplifier |
US20020125924A1 (en) * | 2001-01-29 | 2002-09-12 | Fujitsu Limited | Frequency multiplier device and frequency multplier circuit |
US20030001677A1 (en) * | 2000-12-01 | 2003-01-02 | Eiji Taniguchi | High-frequency amplifier and high-frequency mixer |
US6518842B1 (en) * | 2002-06-07 | 2003-02-11 | Analog Devices, Inc. | Bipolar rail-to-rail input stage with selectable transition threshold |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58181310A (en) * | 1982-04-15 | 1983-10-24 | Mitsubishi Electric Corp | Voltage gain control amplification device |
JPH04150310A (en) * | 1990-10-11 | 1992-05-22 | Matsushita Electric Ind Co Ltd | Analog switch circuit |
JP3922773B2 (en) * | 1997-11-27 | 2007-05-30 | 三菱電機株式会社 | Power amplifier |
US6393260B1 (en) * | 1998-04-17 | 2002-05-21 | Nokia Mobile Phones Limited | Method for attenuating spurious signals and receiver |
US6073002A (en) * | 1998-05-04 | 2000-06-06 | Motorola | Mixer circuit and communication device using the same |
-
2003
- 2003-07-07 US US10/614,495 patent/US6987419B2/en not_active Expired - Lifetime
-
2004
- 2004-06-23 DE DE602004024543T patent/DE602004024543D1/en not_active Expired - Lifetime
- 2004-06-23 WO PCT/US2004/020334 patent/WO2005011110A1/en active Application Filing
- 2004-06-23 CN CN200480019549XA patent/CN1820412B/en not_active Expired - Fee Related
- 2004-06-23 JP JP2006518682A patent/JP2007527650A/en active Pending
- 2004-06-23 KR KR1020067000319A patent/KR101105491B1/en active IP Right Grant
- 2004-06-23 EP EP04777044A patent/EP1652296B1/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6157257A (en) * | 1999-06-30 | 2000-12-05 | Conexant Systems, Inc. | Low power folding amplifier |
US20030001677A1 (en) * | 2000-12-01 | 2003-01-02 | Eiji Taniguchi | High-frequency amplifier and high-frequency mixer |
US20020125924A1 (en) * | 2001-01-29 | 2002-09-12 | Fujitsu Limited | Frequency multiplier device and frequency multplier circuit |
US6518842B1 (en) * | 2002-06-07 | 2003-02-11 | Analog Devices, Inc. | Bipolar rail-to-rail input stage with selectable transition threshold |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114497928A (en) * | 2022-04-18 | 2022-05-13 | 合肥芯谷微电子有限公司 | Millimeter wave single-pole single-throw switch |
CN114497928B (en) * | 2022-04-18 | 2022-06-28 | 合肥芯谷微电子有限公司 | Millimeter wave single-pole single-throw switch |
Also Published As
Publication number | Publication date |
---|---|
CN1820412B (en) | 2010-04-28 |
EP1652296B1 (en) | 2009-12-09 |
US6987419B2 (en) | 2006-01-17 |
EP1652296A1 (en) | 2006-05-03 |
US20050007196A1 (en) | 2005-01-13 |
DE602004024543D1 (en) | 2010-01-21 |
CN1820412A (en) | 2006-08-16 |
JP2007527650A (en) | 2007-09-27 |
KR101105491B1 (en) | 2012-01-13 |
KR20060026959A (en) | 2006-03-24 |
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