WO2005006545A1

WO2005006545A1 - Frequency regulator of electronic component and frequency regulating method of electronic component employing it

Info

Publication number: WO2005006545A1
Application number: PCT/JP2004/008324
Authority: WO
Inventors: Takashi Mizuguchi; Masahiro Tonsho
Original assignee: Murata Manufacturing Co., Ltd.
Priority date: 2003-07-10
Filing date: 2004-06-14
Publication date: 2005-01-20
Also published as: JP4196993B2; JPWO2005006545A1

Abstract

A highly reliable frequency regulator of an electronic component and a frequency regulating method of an electronic component employing it in which particles produced through ion beam etching have no adverse effect on the characteristics of a product. At least the part of a control collector (4) for detecting an ion beam current (ions or electrons) which is irradiated with the ion beam is composed of an inorganic insulator (12). At least the part of the control collector (4) which is not irradiated with the ion beam (5) is composed of a conductor (13).

Description

TECHNICAL FIELD The present invention relates to a frequency adjustment device for electronic components and a frequency adjustment method for electronic components using the same.

The present invention relates to a frequency adjustment device for adjusting the frequency of an electronic component such as a surface acoustic wave filter or a piezoelectric filter by ion beam etching, and a method for adjusting the frequency of an electronic component using the same. Control to monitor current (ions or electrons)

Device for adjusting frequency of electronic component characterized by collector and electronic component using the same

Frequency adjustment method.

Background art

[0002] A conventional frequency adjusting device for an electronic component used to obtain a desired characteristic by adjusting the frequency of an oscillator ゃ a piezoelectric filter or a surface acoustic wave filter includes, for example, etching of a piezoelectric element using an ion beam. There is a frequency adjustment device for a piezoelectric element that adjusts the frequency by performing the adjustment.

[0003] In this frequency adjusting device, as shown in Fig. 8, a neutralizer 52 of tungsten filament is arranged near an ion gun 51, and a control collector 54 is arranged between a shutter 58 and the ion gun 51. The collector 54 detects the ion beam current, and the feedback circuit 59 controls the power of the neutralizer 52.

In this frequency adjusting device, when the shutter 58 is closed, the switch 62 is turned off to stop the irradiation of the ion beam 55, and the switch 63 is turned off, so that the electron beam from the neutralizer 52 is turned off. Configured to stop the release

In adjusting the frequency using this frequency adjusting device, first, a collector 60 for testing for obtaining a set value of a collector current, which is mounted on a carrier 65, is firstly processed by a bias power supply 61 by a bias power supply 61. Is set to the same potential as the etched surface of the piezoelectric element, and the set value of the collector current is determined such that the ion beam current at this time and the electron current of the neutralizer 52 are canceled out and become zero. [0005] After the set value of the collector current is determined in this way, the switch 60 removes the test collector 60 for obtaining the set value of the collector current, and the carrier 65 on which the piezoelectric element 53 is mounted is fixed. To the position.

Next, the feedback circuit 59 and the feedback circuit 64 irradiate the ion beam 55 while performing feedback control so that the collector current always becomes a set value, and perform frequency adjustment by ion beam etching (see, for example, Patent Document 1). 1).

[0007] In addition, in a plasma etching apparatus, at least a surface of a portion to be irradiated with plasma is formed of a polyimide resin in order to prevent a member in the chamber from being eroded by the plasma and contaminating the wafer. There has been proposed a plasma etching apparatus that suppresses the adhesion of reaction products due to plasma etching and prevents generation of particles (for example, see Patent Document 2).

Patent Document 1: Japanese Patent Application Laid-Open No. 2001-257549

Patent Document 2: JP-A-8-148471

Disclosure of the invention

Problems to be solved by the invention

However, in the case of the frequency adjusting device for a piezoelectric element disclosed in Patent Document 1, since the current flowing through the control collector is detected and the ion beam is controlled by the magnitude of the current, the control collector has conductivity. Since the control collector cannot be composed of only the insulator, the conductive material (particles) generated by the erosion of the control collector by the ion beam adheres to the workpiece, etc. There is a problem that it may cause an electrical short circuit. In other words, since the control collector performs not only the function of monitoring the current but also the function of focusing the ion beam, the control collector is directly exposed to the ion beam, and the energy of the ion beam causes the control collector to slightly change. And particles are generated.

[0009] Further, as described above, since the control collector is shaved by the energy of the ion beam, there is a problem that portions directly exposed to the ion beam are heavily consumed and have a short life.

[0010] Further, in the frequency adjusting device for a piezoelectric element disclosed in Patent Document 1, the ion collector of the control collector is used. As in Patent Document 2, it is conceivable to form the surface of the part irradiated with the beam with a polyimide resin as an insulator, but in this case, the adhesion of reaction products by the ion beam is temporarily suppressed. However, there is a problem that a sufficient life as a control collector cannot be obtained only by forming the surface of a portion to be irradiated with a force ion beam capable of preventing generation of particles with a polyimide resin. That is, the etching rate of polyimide resin is higher than that of conventional materials used for control collectors, such as stainless steel, Mo (molybdenum) considering heat resistance, and C (carbon) considering etching resistance. The life expectancy is also short.

[0011] The present invention has been made in view of the above circumstances, and even if the life of the control collector is long, particles generated by ion beam etching may not adversely affect the characteristics of the product, and the reliability is high. An object of the present invention is to provide a frequency adjustment device for an electronic component and a frequency adjustment method for an electronic component using the frequency adjustment device.

Means for solving the problem

[0012] In order to solve the above-mentioned problems, a frequency adjusting device for an electronic component according to the present invention (claim 1)

In an electronic component frequency adjustment device that adjusts the frequency of an electronic component by ion-etching the electronic component element,

The control collector for detecting the ion beam current has an opening through which the ion beam passes, and at least a portion of the control collector irradiated with the ion beam is made of an inorganic insulator.

[0013] Furthermore, the frequency adjusting device for an electronic component according to claim 2 is the frequency adjusting device for an electronic component according to claim 1, wherein at least a part of the control collector that is not irradiated with the ion beam has a conductor force. It is characterized by being composed.

[0014] Further, the frequency adjustment device for electronic components of the present invention (claim 3)

It has an opening through which the ion beam passes, and is a control collector force for detecting the ion beam current. It is formed by alternately laminating an inorganic insulator layer and a conductor layer, and at least ion The outermost layer on the side irradiated with the beam is formed from a laminated structure that is an inorganic insulator layer.

It is characterized by.

[0015] Further, a frequency adjusting device for an electronic component according to claim 4 is the frequency adjusting device for an electronic component according to any one of claims 13 to 13, wherein the opening of the control collector is located on the inlet side of the ion beam. The diameter is larger than the diameter on the outlet side.

[0016] Further, according to the frequency adjustment method for an electronic component of the present invention (claim 5), the electronic component element is ion-etched using the electronic component frequency adjustment device according to any one of claims 14 to 14. In this case, the frequency is adjusted.

The invention's effect

[0017] As described above, the frequency adjustment device for an electronic component according to the present invention (claim 1) uses an inorganic insulating material for at least a portion of the control collector that detects an ion beam current (ions or electrons), where the ion beam is irradiated. Since it is composed of a body, it is less likely to be etched than a resin such as polyimide, and has a highly reliable electron that can prevent particles generated by ion beam etching from adversely affecting the characteristics of the product. It becomes possible to realize a device for adjusting the frequency of components.

In other words, if the portion of the control collector that is irradiated with the ion beam is made of an inorganic insulator, even if the control collector is irradiated with the ion beam and particles are generated, the portion of the control collector that is exposed to the ion beam will be inorganic. Since it is an insulator, the partake is an insulator. Therefore, by using the frequency adjustment device of the present invention, a problem such as a short circuit occurs even when particles generated in the frequency adjustment process adhere to the electrodes of the electronic component to be frequency adjusted. Therefore, it is possible to provide a highly reliable electronic component adjusted to a desired frequency.

Note that, in the present invention, at least the portion irradiated with the ion beam is composed of an inorganic insulating material when at least the portion irradiated with the ion beam itself is formed of an inorganic insulator such as alumina. This is a broad concept including a case where the substrate is covered with an inorganic insulator film such as an alumina film and a case where an inorganic insulator plate such as an alumina substrate is attached. [0018] Further, as in the frequency adjusting device for an electronic component according to claim 2, at least a part of the portion of the control collector that is not irradiated with the ion beam is made of a conductor, so that the current flowing through the control collector is detected. The ion beam can be reliably controlled by the magnitude of the current, and the present invention can be made effective.

In the present invention, at least a part of the collector that is not irradiated with the ion beam is constituted by a conductor force, which means that the ion beam is not irradiated, and at least a part of the part is a metal. This is a broad concept that includes a case where a conductor plate such as a metal plate is used, a case where the conductor plate is covered with a conductor film such as a metal film, and a case where a conductor plate such as a metal plate is attached.

[0019] Further, as in the frequency adjusting device for an electronic component according to the present invention (claim 3), the control collector is formed by laminating an inorganic insulator layer and a conductor layer, and at least the outermost layer on the side irradiated with the ion beam. When a layer is formed from a laminated structure in which an inorganic insulator layer is formed, the outermost layer on the side irradiated with an ion beam is an inorganic insulator layer. It becomes an insulator. Therefore, it is possible to suppress the occurrence of problems such as short-circuiting even when the part generated in the frequency adjustment process becomes the target of frequency adjustment and adheres to the electrodes of electronic components. In addition, since part of the control collector is formed of conductive layers alternately stacked with the inorganic insulator layers, it is possible to detect the current flowing through the control collector and control the ion beam based on the magnitude of the current. It will be possible.

Accordingly, it is possible to realize a highly reliable electronic component frequency adjusting device in which the life of the control collector is long and particles generated by ion beam etching do not adversely affect the characteristics of the product.

In the present invention, at least the outermost layer on the side irradiated with the ion beam is an inorganic insulator layer, which means that the outermost layer on the side irradiated with the ion beam is an inorganic insulator layer such as alumina, and the like. When the outermost layer on the side opposite to the side irradiated with is also an inorganic insulator layer, and when the outermost layer on the side irradiated with the ion beam is an inorganic insulator layer such as alumina and the side irradiated with the ion beam The concept includes the case where the outermost layer on the opposite side is a conductor layer is there.

[0020] Furthermore, as in the frequency adjusting device for an electronic component according to claim 4, the diameter of the opening of the control collector on the inlet side of the ion beam is made larger than the diameter on the outlet side, so that the inner periphery of the opening is In the surface (tapered portion), it is possible to increase the amount of inflow current from the conductive layer exposed to the tapered portion, to improve the sensitivity of the ion beam current detection, and to further improve the present invention. It can be effective.

[0021] Further, according to the frequency adjustment method for an electronic component of the present invention (claim 5), the electronic component element is ion-etched using the electronic component frequency adjustment device according to any one of claims 14 to 14. As a result, it is possible to prevent the particles generated in the frequency adjustment process from adhering to the electrodes of the electronic component whose frequency is being adjusted and causing a short circuit, and to reliably adjust the frequency of the electronic component. Thus, it is possible to provide a highly reliable electronic component having desired characteristics.

Brief Description of Drawings

FIG. 1 is a diagram showing a schematic configuration of a frequency adjusting device for an electronic component according to an embodiment of the present invention.

FIG. 2 is an enlarged view showing a main part of a frequency adjusting device for an electronic component according to an embodiment of the present invention.

FIG. 3 is a diagram showing a modified example of a control collector used in the frequency adjustment device for electronic components of the present invention.

FIGS. 4 (a) and (b) are diagrams showing another modified example of the control collector used in the electronic component frequency adjusting device of the present invention.

FIGS. 5 (a) and 5 (b) are diagrams showing still another modified example of the control collector used in the electronic component frequency adjusting device of the present invention.

6] (a) and (b) are diagrams showing still another modified example of the control collector used in the electronic component frequency adjusting device of the present invention. [FIG.

FIGS. 7 (a)-(d) are diagrams showing still another modified example of the control collector used in the electronic component frequency adjusting device of the present invention.

FIG. 8 is a diagram showing a conventional frequency adjustment device for electronic components. Explanation of reference numerals

[0023] 1 Ion gun

2 Neutralizer

3 Work (surface acoustic wave filter)

4 Wholesale collector

5 year old beam

9 Controller

Ten

11 Opening

12 Inorganic insulator (alumina)

12a Inorganic insulator layer

13 Conductor (Silver (Ag) thin film)

13a

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described, and features thereof will be described in more detail.

Example 1

In this embodiment, for a surface acoustic wave filter having a structure in which a comb-shaped electrode made of Ta is provided on the surface of a quartz substrate, the frequency is adjusted by ion-etching the quartz substrate and the comb-shaped electrode. An example will be described.

In the above structure, since the specific gravity of the comb-shaped electrode made of the force Ta, which is simultaneously etched at substantially the same rate by the quartz substrate and the comb-shaped electrode, is much larger than that of the quartz substrate, the comb-shaped electrode The frequency is increased by the fact that the effect of etching is large.

FIG. 1 is a diagram showing a frequency adjusting device for an electronic component according to an embodiment of the present invention, and FIG. 2 is an enlarged view of a main part thereof.

As shown in FIGS. 1 and 2, the frequency adjusting apparatus for electronic components of this embodiment is configured such that a work (elastic surface wave) by irradiating an ion beam 5 is provided near an ion gun 1 disposed inside a vacuum vessel 10. Filter) 3 function to emit electrons to prevent charge up A neutralizer 2 composed of a tungsten filament is disposed, and a control collector 4 is disposed between the workpiece 3 and the ion gun 1. The current of the ion beam 5 is detected by the control collector 4, and the neutralizer is controlled by the controller 9. It is configured to control the power of riser 2.

The control collector 4 functions to detect the current (ion and Z or electrons) of the ion beam 5 and to control the ion beam 5 to be narrowed. As shown in FIG. 2, the control collector 4 has an opening 11 through which the ion beam 5 passes. The main part (body) of the control collector 4 is made of an inorganic insulator (alumina in this embodiment) 12, and the back side of the inorganic insulator (alumina in this embodiment) 12 (ion beam) A conductor (an electrode film made of a silver (Ag) thin film in this embodiment) 13 is disposed on the side opposite to the irradiation surface 5).

[0028] The neutralizer 2 generally generates a thermoelectron with a filament as used in this embodiment. A force other than this is used. Is also possible.

When adjusting the frequency of the work (surface acoustic wave filter) 3 using the frequency adjustment device configured as described above, the ion beam 1 is generated from the ion gun 1 disposed inside the vacuum vessel 10. Then, the work 3 is irradiated and the frequency is adjusted by ion-etching the surface of the quartz substrate of the work 3 and the comb-shaped electrodes.

At this time, the ion beam current is detected through the conductor 13 disposed on the surface of the control collector 4 opposite to the surface irradiated with the ion beam 5, and the controller 9 outputs the output of the neutralizer 2 to the work 3 Is controlled to an appropriate value that can prevent charge-up of the battery.

[0030] As described above, the ion beam current is detected by the control collector 4, and the output of the neutralizer 2 is controlled to an appropriate value that can prevent charge-up of the work 3. Is for the following reason.

That is, in the ion beam etching, the charged ions collide with the work 3 due to the irradiation of the ion beam 5, and the work 3 is in a state where the charge is accumulated (charge-up state). Then, when this charge-up state is reached, it must then collide with work 3. If the ions are repelled and the collision with the work 3 is disturbed, it will also affect the frequency measurement with force, and in some cases, if a large amount of electric charge enters the measuring instrument and destroys it, it will be like Problems arise. Therefore, by supplying electrons using the neutralizer 2, the above-described problem is prevented from occurring, and the frequency can be adjusted by ion etching without fail.

In the frequency adjusting device configured as described above, the surface of the control collector 4 to which the ion beam 5 is irradiated is formed by the plate-like inorganic insulator 12, so that the durability of the control collector 4 is improved. Even if the control collector 4 is irradiated with the ion beam 5 to generate particles, the part of the control collector 4 exposed to the ion beam 5 is made of the inorganic insulator 12. Therefore, the generated particles become insulators. Therefore, when the frequency adjustment of the electronic component is performed by using the frequency adjustment device of this embodiment, even if the generated particles adhere to the electrode or the circuit of the work (the surface acoustic wave filter in this embodiment) 3, a short circuit occurs. The problem described above does not occur, and it is possible to efficiently manufacture a highly reliable electronic component adjusted to a desired frequency.

The surface acoustic wave filter having a structure in which a comb-shaped electrode made of Ta is provided on the surface of a quartz substrate by using the frequency adjusting device of this embodiment When the frequency was adjusted by ion-etching the electrode, it was confirmed that the frequency could be adjusted to a desired value with extremely few problems such as short circuit.

Further, an embodiment of the present invention using a control collector in which a main part is formed of alumina which is an inorganic insulator, and a conductor (a silver (Ag) thin film electrode film) is disposed on the back surface side. Using a frequency adjustment device for electronic components and a conventional frequency adjustment device for electronic components using a control collector made entirely of metal (molybdenum), the frequency of 1000 surface acoustic wave filters with The frequency of rejects was adjusted and the rejection rate was checked. As a result, when the conventional frequency adjustment device for electronic components was used, the rejection rate was 39 (rejection rate 3.9%). On the other hand, when the frequency adjustment device for electronic components according to the embodiment of the present invention is used, the number of defective products is two (the defective product occurrence rate is 0.2%), and the defective product is generated. It was confirmed that the rate greatly decreased. In the above embodiment, the case where alumina was used as a constituent material of the inorganic insulator 12 and silver (Ag) was used as a constituent material of the conductor (electrode film) 13 was described as an example. Other than alumina, other materials such as zirconia, SiC, and Si〇 can be used as the rim, and those having a low etching rate, such as alumina, are preferable.

. Further, as the conductor, other than silver, a material such as molybdenum, stainless steel, carbon (C), or another metal can be used, and a material having no corrosiveness is preferable.

In this embodiment, the surface acoustic wave filter has been described as an example in which the frequency is adjusted by ion-etching the surface of the quartz substrate and the interdigital electrode made of Ta. In the case of a surface acoustic wave oscillator having a comb-shaped electrode made of A1 on the surface of a quartz substrate, the frequency is adjusted by ion-etching the surface of the quartz substrate and the comb-shaped electrode made of A1. It is also possible. At this time, the frequency is adjusted using the fact that the quartz substrate and the A1 comb-shaped electrode have different etching plates.For example, a piezoelectric vibrator having a structure in which vibrating electrodes are arranged on both front and back surfaces of a piezoelectric substrate When the frequency is adjusted, the frequency can be adjusted by ion-etching the vibration electrode.

However, in the present invention, the specific mode for adjusting the frequency is not limited to the above example, and can be widely applied to the case where the frequency of the electronic component is adjusted in still another mode. .

[Modification of Control Collector]

In the above embodiment, the portion constituting the surface irradiated with the ion beam 5 is made of the inorganic insulator (alumina) 12, and the back side of the inorganic insulator (alumina) 12 (the side opposite to the irradiation surface of the ion beam 5) ), A control collector having a structure in which a conductor (silver (Ag) thin film) 13 is disposed is used. However, in the frequency adjustment device for electronic components of the present invention, other components will be described below. It is possible to use control collectors having various structures (see Figs. 3, 4, 5, 6 and 7).

That is, in the electronic device frequency adjusting apparatus of the present invention, in addition to the control collector 4 (see FIGS. 1 and 2) of the above embodiment, as shown in FIG. As in the case of the heater 4, the main part (main body) is composed of the inorganic insulator 12, and the portion of the inorganic insulator (alumina) 12 not irradiated with the ion beam 5 (the actual surface of the surface irradiated with the ion beam 5). The control collector has a structure in which the entire surface of the inorganic insulator 12 (excluding the region irradiated with the ion beam 5 and the inner peripheral surface of the opening 11 of the control collector 4) is covered with a conductor (electrode film) 13. It is possible to use 4.

As shown in FIGS. 4 (a) and 4 (b), the main part (main body) is made of an inorganic insulator (alumina in this embodiment) 12, similarly to the control collector 4 of the above embodiment. Then, a conductor 13 is formed on the back side of the inorganic insulator (alumina) 12, and the opening 11 has a linear tapered shape (trapezoidal shape) as shown in FIG. Alternatively, as shown in FIG. 4 (b), it is also possible to use a control collector 4 in which the opening 11 has a curved tapered shape (convex taper).

As shown in FIGS. 5 (a) and 5 (b), a main part (main body) is made of an inorganic insulator 12, and a portion of the inorganic insulator (alumina) 12 to which the ion beam 5 is not irradiated. (The entire surface of the inorganic insulator 12 except for the area to be irradiated with the ion beam 5 and the area to be actually irradiated with the ion beam 5 and the inner peripheral surface of the opening 11 of the control collector 4) The control collector 4 has a structure covered with the opening 13 and the opening 11 has a linear tapered shape (trapezoidal shape) as shown in FIG. 5 (a), or as shown in FIG. 5 (b). In addition, it is also possible to use the control collector 4 in which the opening 11 has a curved tapered shape (convex taper).

As shown in FIG. 6 (a), the main part (main body) is made of a conductor 13, and an inorganic insulator (alumina film in this embodiment) is formed on the entire surface to be irradiated with the ion beam 5. 6) A control collector 4 provided with 12, and as shown in Fig. 6 (b), the main part (main body) is made of a conductor 13, and the ion beam 5 on the surface to be irradiated with the ion beam 5 is actually irradiated. It is also possible to use a control collector 4 in which an inorganic insulator (alumina film in this embodiment) 12 is disposed in a region to be formed. In addition, if the thickness of the inorganic insulator is usually about several hundred zm, practical durability can be ensured.

Further, as shown in FIGS. 7 (a) and 7 (d), the outermost layer on the side irradiated with the ion beam 5 is formed by alternately laminating the inorganic insulator layers 12a and the conductor layers 13a. It is also possible to use a control collector having a laminated structure configured to be an inorganic insulator layer. 7A to 7D, the surface of the control collector having a laminated structure to which the ion beam 5 is irradiated is shown. The outermost layer constituting the surface on the opposite side also becomes the inorganic insulator layer 12a.

Note that the control collector 4 in FIG. 7 (a) has a structure in which the conductor layer 13a is sandwiched between the inorganic insulator layers 12a, and the control collector 4 in FIG. The layer 12a and the conductor layer 13a are alternately stacked, and the surface irradiated with the ion beam 5 and the outermost layer on the opposite side are formed as an inorganic insulator layer 12a.

Further, the control collector 4 in FIG. 7 (c) has an inorganic insulator layer 12a and a conductor layer 13a alternately stacked, and the irradiation surface of the ion beam 5 and the outermost layer on the opposite side are made of an inorganic insulator. The control collector 4 in FIG. 7D has a structure in which the inorganic insulator layer 12a and the conductor layer 13a are formed as a layer 12a and the opening 11 has a linear tapered shape (trapezoidal shape). It has a structure in which the layers are alternately stacked, the irradiation surface of the ion beam 5 and the outermost layer on the opposite side are the inorganic insulating layer 12a, and the opening 11 is a curved tapered shape (convex taper). Te, ru.

In the case of the control collector 4 shown in FIGS. 7 (c) and 7 (d), the amount of current flowing from the conductive layer 13a exposed on the tapered portion of the inner peripheral surface (tapered portion) of the opening 11 should be large. Therefore, the sensitivity of the detection of the ion beam current can be improved.

Note that the specific structure and configuration of the control collector that can be used in the electronic device frequency adjustment device of the present invention are not limited to those described above, and are not limited to those described above. It is also possible to use one.

In the above embodiment, the case where the frequency of the surface acoustic wave filter is adjusted has been described as an example. However, the present invention can be widely applied to the case where the frequency of the piezoelectric filter and other various electronic components is adjusted. It is possible.

The invention of the present application is not limited to the above-described embodiment in other respects, and various applications and modifications can be made within the scope of the invention.

Industrial applicability

As described above, by using the frequency adjusting device of the present invention, it is possible to prevent particles generated by ion beam etching from adversely affecting the characteristics of a product, and to perform the process in the frequency adjusting step. Even if the generated particles are subject to frequency adjustment and adhere to the electrodes of electronic components, problems such as short circuits are prevented from occurring, and a highly reliable frequency adjusted to the desired frequency is prevented. Electronic components can be obtained. Therefore, the present invention is widely used in a frequency adjusting device for adjusting the frequency of an electronic component by ion etching, and in a manufacturing process of an electronic component which needs to adjust the frequency such as a surface acoustic wave filter and a piezoelectric filter. It is possible.

Claims

The scope of the claims

[1] An electronic component frequency adjustment device that adjusts the frequency of an electronic component by ion-etching the electronic component element.

A frequency adjuster for an electronic component, comprising: an opening through which an ion beam passes; and a control collector for detecting an ion beam current, wherein at least a portion of the control collector irradiated with the ion beam is made of an inorganic insulator.

2. The electronic device frequency adjustment device according to claim 1, wherein at least a part of the portion of the control collector that is not irradiated with the ion beam is made of a conductive material.

[3] In an electronic component frequency adjustment device that adjusts the frequency of an electronic component by ion-etching the electronic component element,

A control collector having an opening through which the ion beam passes and detecting the ion beam current, formed by alternately laminating an inorganic insulator layer and a conductor layer, and at least the outermost layer on the side irradiated with the ion beam; Formed from a laminated structure that is an inorganic insulator layer

A frequency adjusting device for an electronic component, characterized in that:

4. The frequency adjustment device for an electronic component according to claim 1, wherein the diameter of the opening of the control collector on the inlet side of the ion beam is larger than the diameter on the outlet side.

[5] A frequency adjustment method for an electronic component, wherein the frequency is adjusted by ion-etching an electronic component element using the frequency adjustment device for an electronic component according to claim 14.