WO2004097879A3 - Bradbury-nielsen gate and method of fabricating same - Google Patents

Bradbury-nielsen gate and method of fabricating same Download PDF

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Publication number
WO2004097879A3
WO2004097879A3 PCT/US2004/013048 US2004013048W WO2004097879A3 WO 2004097879 A3 WO2004097879 A3 WO 2004097879A3 US 2004013048 W US2004013048 W US 2004013048W WO 2004097879 A3 WO2004097879 A3 WO 2004097879A3
Authority
WO
WIPO (PCT)
Prior art keywords
bradbury
fabricating same
nielsen gate
nielsen
semiconducting layer
Prior art date
Application number
PCT/US2004/013048
Other languages
French (fr)
Other versions
WO2004097879A2 (en
Inventor
Harry K Charles Jr
Arthur S Francomacaro
Richard L Edwards
Original Assignee
Univ Johns Hopkins
Harry K Charles Jr
Arthur S Francomacaro
Richard L Edwards
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Johns Hopkins, Harry K Charles Jr, Arthur S Francomacaro, Richard L Edwards filed Critical Univ Johns Hopkins
Publication of WO2004097879A2 publication Critical patent/WO2004097879A2/en
Publication of WO2004097879A3 publication Critical patent/WO2004097879A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/06—Electron- or ion-optical arrangements
    • H01J49/061—Ion deflecting means, e.g. ion gates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A Bradbury-Nielsen gate structure configured with a crystalline semiconducting layer and a plurality of free standing, spaced apart interdigitated electrodes formed atop the crystalline semiconducting layer is disclosed.
PCT/US2004/013048 2003-04-28 2004-04-28 Bradbury-nielsen gate and method of fabricating same WO2004097879A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46601503P 2003-04-28 2003-04-28
US60/466,015 2003-04-28

Publications (2)

Publication Number Publication Date
WO2004097879A2 WO2004097879A2 (en) 2004-11-11
WO2004097879A3 true WO2004097879A3 (en) 2005-05-12

Family

ID=33418326

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/013048 WO2004097879A2 (en) 2003-04-28 2004-04-28 Bradbury-nielsen gate and method of fabricating same

Country Status (1)

Country Link
WO (1) WO2004097879A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005112103A2 (en) * 2004-05-07 2005-11-24 Stillwater Scientific Instruments Microfabricated miniature grids
WO2007103375A2 (en) 2006-03-06 2007-09-13 Stillwater Scientific Instruments Gating grid and method of manufacture
CN105632867B (en) * 2015-12-30 2020-07-07 复旦大学 Method for improving performance of grid ion trap

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465480A (en) * 1993-03-27 1995-11-14 Bruker-Franzen Analytik Gmbh Method of manufacturing a gating grid
US6080985A (en) * 1997-09-30 2000-06-27 The Perkin-Elmer Corporation Ion source and accelerator for improved dynamic range and mass selection in a time of flight mass spectrometer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465480A (en) * 1993-03-27 1995-11-14 Bruker-Franzen Analytik Gmbh Method of manufacturing a gating grid
US6080985A (en) * 1997-09-30 2000-06-27 The Perkin-Elmer Corporation Ion source and accelerator for improved dynamic range and mass selection in a time of flight mass spectrometer

Also Published As

Publication number Publication date
WO2004097879A2 (en) 2004-11-11

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