WO2004095498A2 - Source de plasma a densite elevee employant des atomes excites - Google Patents

Source de plasma a densite elevee employant des atomes excites Download PDF

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Publication number
WO2004095498A2
WO2004095498A2 PCT/US2004/010968 US2004010968W WO2004095498A2 WO 2004095498 A2 WO2004095498 A2 WO 2004095498A2 US 2004010968 W US2004010968 W US 2004010968W WO 2004095498 A2 WO2004095498 A2 WO 2004095498A2
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WO
WIPO (PCT)
Prior art keywords
plasma
power supply
density
initial
power
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Application number
PCT/US2004/010968
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English (en)
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WO2004095498A3 (fr
Inventor
Roman Chistyakov
Original Assignee
Zond,Inc
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Publication date
Priority claimed from US10/249,595 external-priority patent/US6806651B1/en
Application filed by Zond,Inc filed Critical Zond,Inc
Publication of WO2004095498A2 publication Critical patent/WO2004095498A2/fr
Publication of WO2004095498A3 publication Critical patent/WO2004095498A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Definitions

  • Plasma is considered the fourth state of matter.
  • a plasma is a collection of charged particles that move in random directions.
  • a plasma is, on average, electrically neutral.
  • One method of generating a plasma is to drive a current through a low- pressure gas between two conducting electrodes that are positioned parallel to each other. Once certain parameters are met, the gas "breaks down" to form the plasma.
  • a plasma can be generated by applying a potential of several kilovolts between two parallel conducting electrodes in an inert gas atmosphere (e.g., argon) at
  • Plasma processes are widely used in many industries, such as the semiconductor manufacturing industry. For example, plasma etching is commonly used to etch substrate material and to etch films deposited on substrates in the electronics industry. There are four basic types of plasma etching processes that are used to remove material from surfaces: sputter etching, pure chemical etching, ion energy driven etching, and ion inhibitor etching.
  • Plasma sputtering is a technique that is widely used for depositing films on substrates and other work pieces.
  • Sputtering is the physical ejection of atoms from a target surface and is sometimes referred to as physical vapor deposition (PVD).
  • Ions such as argon ions, are generated and are then drawn out of the plasma and accelerated across a cathode dark space.
  • the target surface has a lower potential than the region in which the plasma is formed. Therefore, the target surface attracts positive ions.
  • Positive ions move towards the target with a high velocity and then impact the target and cause atoms to physically dislodge or sputter from the target surface.
  • the sputtered atoms then propagate to a substrate or other work piece where they deposit a film of sputtered target material.
  • the plasma is replenished by electron-ion pairs formed by the collision of neutral molecules with secondary electrons generated at the target surface.
  • Reactive sputtering systems inject a reactive gas or mixture of reactive gases into the sputtering system.
  • the reactive gases react with the target material either at the target surface or in the gas phase, resulting in the deposition of new compounds.
  • the pressure of the reactive gas can be varied to control the stoichiometry of the film. Reactive sputtering is useful for forming some types of molecular thin films.
  • Magnetron sputtering systems use magnetic fields that are shaped to trap and concentrate secondary electrons proximate to the target surface.
  • the magnetic fields increase the density of electrons and, therefore, increase the plasma density in a region that is proximate to the target surface.
  • the increased plasma density increases the sputter deposition rate.
  • FIG. 1 illustrates a cross-sectional view of a known plasma generating apparatus having a direct current (DC) power supply.
  • FIG. 2A illustrates a cross-sectional view of a plasma generating apparatus having a segmented cathode according to the invention.
  • FIG. 2B illustrates a cross-sectional view of the segmented cathode of FIG. 2A.
  • FIG. 3 illustrates a cross-sectional view of a plasma generating apparatus including a magnet assembly according to the invention.
  • FIG. 4 illustrates a graphical representation of applied power as a function of time for periodic pulses applied to an initial plasma in the plasma generating system of FIG. 2A.
  • FIG. 5 illustrates a cross-sectional view of a plasma generating apparatus including the magnet assembly of FIG. 3 and an additional magnet assembly according to the invention.
  • FIG. 6 illustrates a cross-sectional view of a plasma generating apparatus including the magnet assembly of FIG. 3 and an additional magnet assembly according to the invention.
  • FIG. 7 illustrates a cross-sectional view of another embodiment of a plasma generating apparatus including a magnet assembly according to the invention.
  • FIG. 8 illustrates a cross-sectional view of a plasma generating apparatus including a magnet configuration that includes a first magnet and a second magnet according to the invention.
  • FIG. 9 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly, an ionizing electrode, and a first, a second and a third power supply.
  • FIG. 10 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly, a common anode, an ionizing electrode and a first, a second and a third power supply.
  • FIG. 1 1 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly and a first, a second and a third power supply.
  • FIG. 1 2 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly, an excited atom source, and a first, and a second power supply.
  • FIG. 13 illustrates a graphical representation of the power as a function of time for each of a first, a second and a third power supply for one mode of operating the plasma generating system of FIG. 9.
  • FIG. 14 illustrates a graphical representation of power generated as a function of time for each of a first, a second and a third power supply for one mode of operating the plasma generating system of FIG. 9.
  • FIG. 1 5 illustrates a graphical representation of the power as a function of time for each of a first, a second and a third power supply for one mode of operating the plasma generating system of FIG. 9.
  • FIG. 1 6A through FIG. 1 6C are flowcharts of illustrative processes of generating high-density plasmas according to the present invention.
  • FIG. 1 illustrates a cross-sectional view of a known plasma generating apparatus
  • the known plasma generating apparatus 1 00 includes a vacuum chamber 104 where a plasma 105 is generated.
  • the vacuum chamber 1 04 can be coupled to ground.
  • the vacuum chamber 1 04 is positioned in fluid communication with a vacuum pump 106 via a conduit 108 and a valve 109.
  • the vacuum pump 106 is adapted to evacuate the vacuum chamber 104 to high vacuum.
  • the pressure inside the vacuum chamber 104 is generally less than 10 Torr.
  • a feed gas 1 1 0 from a feed gas source 1 1 1 such as an argon gas source, is introduced into the vacuum chamber 104 through a gas inlet 1 1 2.
  • the gas flow is controlled by a valve 1 1 3.
  • the plasma generating apparatus 100 also includes a cathode assembly 1 14.
  • the cathode assembly 1 14 is generally in the shape of a circular disk.
  • the cathode assembly 1 14 can include a target 1 1 6.
  • the cathode assembly 1 14 is electrically connected to a first terminal 1 1 8 of the DC power supply 1 02 with an electrical transmission line 120.
  • An insulator 1 22 isolates the electrical transmission line 120 from a wall of the vacuum chamber 104.
  • An anode 1 24 is electrically connected to a second terminal 126 of the DC power supply 102 with an electrical transmission line 1 27.
  • An insulator 1 28 isolates the electrical transmission line 1 27 from the wall of the vacuum chamber 104.
  • the anode 1 24 is positioned in the vacuum chamber 104 proximate to the cathode assembly 1 14.
  • An insulator 1 29 isolates the anode 124 from the cathode assembly 1 14.
  • the anode 1 24 and the second output 126 of the DC power supply 1 02 are coupled to ground in some systems.
  • the plasma generating apparatus 100 illustrates a magnetron sputtering system that includes a magnet 1 30 that generates a magnetic field 1 32 proximate to the target 1 16.
  • the magnetic field 132 is strongest at the poles of the magnet 130 and weakest in the region 1 34.
  • the magnetic field 132 is shaped to trap and concentrate secondary electrons proximate to the target surface. The magnetic field increases the density of electrons and, therefore, increases the plasma density in a region that is proximate to the target surface.
  • the plasma generating apparatus 1 00 also includes a substrate support 1 36 that holds a substrate 138 or other work piece.
  • the substrate support 136 can be electrically connected to a first terminal 140 of a RF power supply 142 with an electrical transmission line 144.
  • An insulator 146 isolates the RF power supply 142 from a wall of the vacuum chamber 104.
  • a second terminal 148 of the RF power supply 142 is coupled to ground.
  • the feed gas 1 10 from the feed gas source 1 1 1 is injected into the chamber 104.
  • the DC power supply 102 applies a DC voltage between the cathode assembly 1 14 and the anode 124 that causes an electric field 1 50 to develop between the cathode assembly 1 14 and the anode 124.
  • the amplitude of the DC voltage is chosen so that it is sufficient to cause the resulting electric field to ionize the feed gas 1 10 in the vacuum chamber 104 and to ignite the plasma 105.
  • the plasma 105 is maintained, at least in part, by secondary electron emission from the cathode assembly 1 14.
  • the magnetic field 132 that is generated proximate to the cathode assembly 1 14 confines the secondary electrons in the region 1 34 and, therefore, confines the plasma 105 approximately in the region 134.
  • the confinement of the plasma in the region 1 34 increases the plasma density in the region 1 34 for a given input power.
  • the plasma generating apparatus 100 can be configured for magnetron sputtering. Since the cathode assembly 1 14 is negatively biased, ions in the plasma 105 bombard the target 1 16. The impact caused by these ions bombarding the target 1 1 6 dislodges or sputters material from the target 1 1 6. A portion of the sputtered material forms a thin film of sputtered target material on the substrate 1 38.
  • magnetron sputtering systems have relatively poor target utilization.
  • the term "poor target utilization" is defined herein to mean undesirable non-uniform erosion of target material. Poor target utilization is caused by a relatively high concentration of positively charged ions in the region 134 that results in a non- uniform plasma.
  • magnetron etching systems typically have relatively non-uniform etching characteristics.
  • an apparatus generates a plasma having a higher density of ions for a giving input power than a plasma generated by known plasma systems, such as the plasma generating apparatus 1 00 of FIG. 1 .
  • a high-density plasma generation method and apparatus uses an electrode structure including three or more electrodes to generate a high-density plasma including excited atoms, ions, neutral atoms and electrons.
  • the electrodes can be a combination of cathodes, anodes, and/or ionizing electrodes.
  • the electrodes can be configured in many different ways, such as a ring electrode structure, a linear electrode structure, or hollow cathode electrode structure.
  • the plasma generation method and apparatus of the present invention provides independent control of two or more co-existing plasmas in the system.
  • a high-density plasma source can include one or more feed gas injection systems that inject feed gas proximate to one or more of the electrodes in the plasma source.
  • the feed gas can be any mixture of gases as described herein.
  • the one or more feed gas injection systems can also inject plasma proximate to one or more of the electrodes in the plasma source.
  • the injected plasma can be a high-density plasma or a low-density plasma.
  • an initial plasma is generated and then it is super-ionized to form a high-density plasma.
  • super-ionized is defined herein to mean that at least 75% of the neutral atoms in the plasma are converted to ions.
  • the high-density plasma source of the present invention can operate in a constant power, constant voltage, or constant current mode. These modes of operation are discussed herein.
  • the high-density plasma source can use different types of power supplies to generate the high-density plasma. For example, direct-current (DC), alternating-current (AC), radio-frequency (RF), or pulsed DC power supplies can be used to generate the high-density plasma.
  • the power supplies can generate power levels in the range of about 1 W to 10MW.
  • asma generated by the high-density plasma source of the present invention can be used to sputter materials from solid or liquid targets. Numerous types of materials can be sputtered. For example, magnetic, non-magnetic, dielectric, metals, and semiconductor materials can be sputtered.
  • the high-density plasma source of the present invention generates relatively high deposition rates near the outer edge of a sputtering target.
  • the target can be designed and operated such that the increase in the deposition rate near the outer edge of the sputtering target compensates for the decrease of the sputtering rate typically associated with the edge of a sputtering target.
  • This embodiment allows the use of relatively small targets, which can reduce the overall footprint of a process tool, the cost of the target and the cost to operate the process tool.
  • the high-density plasma source of the present invention provides high target utilization and high sputtering uniformity. Additionally, the plasma generated by the high-density plasma source of the present invention can be used for producing ions or atoms from molecules for numerous applications, such as sputter etch, reactive etch, chemical vapor deposition, and for generating ion beams.
  • FIG. 2A illustrates a cross-sectional view of a plasma generating apparatus 200 having a segmented cathode 202 according to the invention.
  • the segmented cathode 202 includes an inner cathode section 202a and an outer cathode section 202b.
  • the segmented cathode 202 includes more than two sections.
  • the segmented cathode 202 can be composed of a metal material, such as stainless steel or any other material that does not chemically react with reactive gases.
  • the segmented cathode 202 can include a target (not shown) that is used for sputtering.
  • the inner cathode section 202a and the outer cathode section 202b can be composed of different materials.
  • Tne ou ter cathode section 202b is coupled to a first output 204 of a first power supply 206.
  • the first power supply 206 can operate in a constant power mode.
  • the term "constant power mode” is defined herein to mean that the power generated by the power supply has a substantially constant power level regardless of changes in the output current and the output voltage level.
  • the first power supply 206 operates in a constant voltage mode.
  • the term “constant voltage mode” is defined herein to mean that the voltage generated by the power supply has a substantially constant voltage level regardless of changes in the output current and the output power level.
  • the first power supply 206 can include an integrated matching unit (not shown). Alternatively, a matching unit (not shown) can be electrically connected to the first output 204 of the first power supply 206.
  • a second output 208 of the first power supply 206 is coupled to a first anode 210.
  • An insulator 21 1 isolates the first anode 210 from the outer cathode section 202b.
  • the second output 208 of the first power supply 206 and the first anode 210 are coupled to ground potential (not shown).
  • the first output 204 of the first power supply 206 couples a negative voltage impulse to the outer cathode section 202b.
  • the second output 208 of the first power supply 206 couples a positive voltage impulse to the first anode 10.
  • Numerous types of power supplies can be used for the first power supply 206.
  • the first power supply 206 can be a pulsed power supply, radio-frequency (RF) power supply, an alternating-current (AC) power supply, or a direct-current (DC) power supply.
  • the first power supply 206 can be a pulsed power supply that generates peak voltage levels of up to about 5kV. Typical operating voltages are in the range of about 50V to 5kV. The first power supply 206 can generate peak current levels in the range of about 1 mA to 10OkA depending on the desired volume and characteristics of the plasma. Typical operating currents vary from less than one hundred amperes to more than a few thousand amperes depending on the desired volume and characteristics of the plasma. The first power supply 206 can generate pulses having a repetition rate that is below 1 kHz. The first power supply 206 can generate pulses having a pulse width that is in the range of about one microsecond to several seconds.
  • the first anode 210 is positioned so as to form a gap 21 2 between the first anode
  • the gap 212 and the total volume of the region 214 are parameters in the ionization process as described herein.
  • the gap 212 can be configured to generate exited atoms from ground state atoms. The excited atoms can increase the density of a plasma.
  • the gap 21 2 can be configured to conduct exited atoms towards the inner cathode section 202a.
  • the excited atoms can either be generated externally or inside the gap 212 depending on the configuration of the system.
  • the gap 212 exhibits a pressure differential that forces the exited atoms towards the inner cathode section 202a. This can increase the density of the plasma proximate to the inner cathode section 202a as previously discussed.
  • the gap 212 can be a plasma generator. In this configuration, feed gas is supplied to the gap 21 2 and a plasma is ignited in the gap 21 2.
  • An ignition condition in the gap 212 can be optimized by varying certain parameters of the gap 212. For example, the presence of crossed electric and magnetic fields in the gap 212 can assist in the ignition and development of a plasma in the gap 21 2. The crossed electric and magnetic fields trap electrons and ions, thereby improving the efficiency of the ionization process.
  • the gap 21 2 can facilitate the use of high input power. For example, as high power is applied to a plasma that is ignited and developing in the gap 212, additional feed gas can be supplied to the gap 21 2. This additional feed gas displaces some of the already developing plasma and absorbs any excess power applied to the plasma. The absorption of the excess power prevents the plasma from contracting and terminating which could otherwise occur without the additional feed gas.
  • the first anode 210 and/or the outer cathode section 202b can include raised areas, depressed areas, surface anomalies, or shapes that improve the ionization process.
  • the pressure in the region 214 can be optimized by including a raised area (not shown) on the surface of the outer cathode section 202b.
  • the raised area can create a narrow passage at a location in the region 214 between the first anode 210 and the outer cathode section 202b that changes the pressure in the region 214.
  • the first output 220 of a second power supply 222 is electrically coupled to the inner cathode section 202a.
  • the second power supply 222 can operate in a constant power mode or a constant voltage mode.
  • the second power supply 222 can have an integrated matching unit (not shown).
  • a matching unit (not shown) is electrically connected to the first output 220 of the first power supply 222.
  • the second power supply 222 can be any type of power supply, such as a pulsed power supply, a DC power supply, an AC power supply, or a RF power supply.
  • a second output 224 of the second power supply 222 is coupled to a second anode 226.
  • An insulator 227 is positioned to isolate the second anode 226 from the outer cathode section 202b.
  • Another insulator (not shown) can be positioned to isolate the second anode 226 from the inner cathode section 202a.
  • the second output 224 of the second power supply 222 and the second anode 226 are electrically connected to ground potential.
  • the first output 220 of the second power supply 222 can couple a negative voltage impulse to the inner cathode section 202a.
  • the second output 224 of the second power supply 222 can couple a positive voltage impulse to the second anode 226.
  • the second power supply 222 can be a pulsed power supply that generates peak voltage levels in the range of about 50V to 5kV.
  • the second power supply 222 can generate peak current levels in the range of about 1 mA to 1 OOkA depending on the desired volume and characteristics of the plasma. Typical operating currents varying from less than one hundred amperes to more than a few thousand amperes depending on the desired volume and characteristics of the plasma and the desired plasma density.
  • the pulses generated by the second power supply 222 can have a repetition rate that is below 1 kHz.
  • the pulse width of the pulses generated by the second power supply 222 can be between about one microsecond and several seconds.
  • the second anode 226 is positioned proximate to the inner cathode section 202a such that current is capable of flowing between the second anode 226 and the inner cathode section 202a.
  • the distance between the second anode 226 and the inner cathode section 202a can be in the range of about 0.3cm to 1 0cm.
  • the plasma generating apparatus 200 can include a chamber (not shown), such as a vacuum chamber.
  • the chamber is coupled in fluid communication to a vacuum pump (not shown) through a vacuum valve (not shown).
  • the chamber can be electrically coupled to ground potential.
  • One or more gas lines 230, 232 provide feed gas 234, 236 (indicated by arrows) from one or more feed gas sources 238, 240, respectively, to the chamber.
  • the feed gas lines 230, 232 can include in-line gas valves 242, 244 that can control the gas flow to the chamber.
  • the gas lines 230, 232 can be isolated from the chamber and other components by insulators (not shown).
  • the gas lines 230, 232 can be isolated from the one or more feed gas sources 238, 240 using in-line insulating couplers (not shown).
  • the one or more feed gas sources 238, 240 can include any feed gas, such as argon.
  • the feed gas can be a mixture of different gases, reactive gases, or pure reactive gas gases.
  • the feed gas can include a noble gas or a mixture of gases.
  • the in-line gas valves 242, 244 are switchable mass flow controllers (not shown).
  • the switchable mass flow controllers can be programmed inject the feed gases 234, 236 in a pulsed manner from the feed gas sources 238, 240, respectively.
  • the pressure in the gap 212 can be varied and optimized by pulsing the feed gas 234 that is injected directly into the gap 212.
  • the timing of the pulses is synchronized to the timing of power pulses generated by the first power supply 206 operated in a pulsed mode.
  • Pulsing the feed gases 234, 236 can also assist in the generation of excited atoms including metastable atoms in the gap 212. For example, by pulsing the feed gas 234 in the gap 212, the instantaneous pressure in the gap is increased while the average pressure in the chamber is unchanged.
  • the plasma generating apparatus 200 can be operated in many different modes. In some modes of operation, the first 206 and the second power supplies 222 together with the segmented cathode 202 are used to generate independent plasmas. The parameters of an initial plasma and a high- density plasma can be varied individually as required by the particular plasma process.
  • the feed gas 234 from the feed gas source 238 is supplied to the chamber by controlling the gas valve 242.
  • the feed gas 234 is supplied between the outer cathode section 202b and the first anode 210.
  • the feed gas 234 can be directly injected into the gap 212 between the outer cathode section 202b and the first anode 210 in order to increase the density of a plasma that is generated in the gap 21 2.
  • Increasing the flow rate of the feed gas causes a rapid volume exchange in the region 214 between the outer cathode section 202b and the first anode 21 0.
  • This rapid volume exchange increases the maximum power that can be applied across the gap 21 2 and thus, permits a high-power pulse having a relatively long duration to be applied across the gap 21 2.
  • Applying high-power pulses having relatively long durations across the gap 212 results in the formation of high- density plasmas in the region 214, as described herein.
  • the first power supply 206 is a component in an ionization source that generates an initial or a pre-ionization plasma in the region 21 4.
  • the pre-ionization plasma can be a weakly-ionized plasma.
  • the term "weakly- ionized plasma” is defined herein to mean a plasma with a relatively low peak plasma density.
  • the peak plasma density of the weakly ionized plasma depends on the properties of the specific plasma processing system. For example, a weakly ionized argon plasma is a plasma that has a peak plasma density that is in the range of about
  • the first power supply 206 applies a voltage between the outer cathode section 202b and the first anode 210.
  • the first power supply 206 can be a pulsed (DC) power supply that applies a negative voltage pulse to the outer cathode section 202b.
  • the size and shape of the voltage pulse are chosen such that an electric field 250 (FIG. 2B) develops between the outer cathode section 202b and the first anode 210.
  • the first power supply can be a DC, AC, or a RF power supply.
  • the amplitude and shape of the electric field 250 are chosen such that an initial plasma is generated in the region 214 between the first anode 210 and the outer cathode section 202b.
  • the initial plasma can be a weakly-ionized plasma that is used for pre-ionization and generally has a relatively low-level of ionization, as described herein.
  • the first power supply 206 generates a low power pulse having an initial voltage that is in the range of about 100V to 5kV with a discharge current that is in the range of about 0.1 A to 1 OOA.
  • the width of the pulse can be in the range of approximately 0.1 microseconds to one hundred seconds. Specific parameters of the pulse are discussed herein in more detail.
  • the first power supply 206 In another mode of operation, prior to the generation of the initial plasma in the region 214, the first power supply 206 generates a potential difference between the outer cathode section 202b and the first anode 210 before the feed gas 234 is supplied to the region 214. In this mode of operation, the feed gas 234 is ignited once a sufficient volume of feed gas is present in the region 214.
  • a direct current (DC) power supply (not shown) is used in an ionization source to generate and maintain the initial plasma in the region 214.
  • the DC power supply is adapted to generate a voltage that is large enough to ignite the initial plasma.
  • the DC power supply can generate an initial voltage of several kilovolts that creates a plasma discharge voltage that is in the range of about 100V to 1 kV with a discharge current that is in the range of about 0.1 A to 100A.
  • the value of the discharge current depends on the power level of the DC power supply and is a function of the volume and characteristics of the plasma.
  • the presence of a magnetic field (not shown) in the region 214 can have a dramatic effect on the value of the applied voltage and current that is required to generate the initial plasma.
  • the DC power supply can generate a current that is in the range of about 1 mA to
  • the DC power supply before generating the initial plasma, is adapted to generate and maintain an initial peak voltage potential between the outer cathode section 202b and the first anode 210 before the introduction of the feed gas 234.
  • an alternating current (AC) power supply (not shown) is used to generate and maintain the initial plasma in the region 214.
  • An AC power supply can require less power to generate and maintain a plasma than a DC power supply.
  • the initial plasma can be generated and maintained using a planar discharge source, a radio frequency (RF) diode source, an ultraviolet (UV) source, an X-ray source, an electron beam source, an ion beam source, an inductively coupled plasma (ICP) source, a capacitively coupled plasma (CCP) source, a microwave plasma source, an electron cyclotron resonance (ECR) source, a helicon plasma source, or ionizing filament techniques.
  • RF radio frequency
  • UV ultraviolet
  • ICP inductively coupled plasma
  • CCP capacitively coupled plasma
  • microwave plasma source a microwave plasma source
  • ECR electron cyclotron resonance
  • helicon plasma source a helicon plasma source
  • Forming an initial plasma in the region 214 substantially eliminates the probability of establishing a breakdown condition in the chamber when high-power pulses are subsequently applied between the outer cathode section 202b and the first anode 210.
  • the probability of establishing a breakdown condition is substantially eliminated because the initial plasma has at least a low-level of ionization that provides electrical conductivity through the plasma. This conductivity substantially prevents the setup of a breakdown condition, even when high-power is applied to the plasma.
  • the initial plasma diffuses somewhat homogeneously through the region 252 as additional feed gas 234 is injected into the region 214.
  • the additional feed gas 234 forces the initial plasma from the region 214 into the region 252. This homogeneous diffusion tends to facilitate the creation of a highly uniform plasma in the region 252.
  • the pressure in the region 214 is higher than the pressure in the region 252. This pressure gradient causes the initial plasma in the region 214 to diffuse into the region 252.
  • the first power supply 206 generates high-power pulses in the gap 212 between the outer cathode section 202b and the first anode 210.
  • the desired power level of the high-power pulses depends on several factors including the desired volume and characteristics of the plasma as well as the density of the initial plasma. In one embodiment, the power level of the high-power pulse is in the range of about 1 kW to 10MW.
  • g acn of the high-power pulses is maintained for a predetermined time that can be in the range of about one microsecond to ten seconds.
  • the repetition frequency or repetition rate of the high-power pulses can be in the range of about 0.1 Hz to 1 kHz.
  • the average power generated by the first power supply 206 can be less than one megawatt depending on the characteristics and the volume of the plasma.
  • the thermal energy in the outer cathode section 202b and/or the first anode 210 can be conducted away or dissipated by liquid or gas cooling such as helium cooling (not shown).
  • the high-power pulses generate an electric field 250 (FIG. 2B) between the outer cathode section 202b and the first anode 210.
  • the electric field 250 can be a relatively strong electric field, depending on the strength and duration of the high- power pulses.
  • the electric field 250 is substantially located in the region 214 between the outer cathode section 202b and the first anode 210.
  • the electric field 250 can be a static or a pulsed electric field.
  • the electric field 250 is a quasi-static electric field.
  • the term "quasi-static electric field" is defined herein to mean an electric field that has a characteristic time of electric field variation that is much greater than the collision time for electrons with neutral gas particles.
  • Such a time of electric field variation can be on the order of ten seconds.
  • the electric field can be an alternating electric field.
  • the term "alternating electric field” is defined herein to mean that the polarity of the electric field changes with time. The strength and the position of the electric field 250 are discussed in more detail herein.
  • the high-power pulses generate a high-density plasma from the initial plasma.
  • high-density plasma is also referred to as a “strongly-ionized plasma.”
  • high-density plasma and “strongly-ionized plasma” are defined herein to mean a plasma with a relatively high peak plasma density. For example, the peak
  • the discharge current that is formed from the high-density plasma can be on the order of about 5kA with a discharge voltage that is in the range of about 50V to 500V for a pressure that is in the range of about 5mTorr to 1 OTorr.
  • the high-density plasma tends to diffuse homogenously in the region 252.
  • the homogenous diffusion creates a more homogeneous plasma volume.
  • the pressure gradient responsible for this homogenous diffusion is described in more detail herein.
  • Homogeneous plasma volumes are advantageous for many plasma processes. For example, plasma etching processes using homogenous plasma volumes accelerate ions in the high-density plasma towards the surface of the substrate (not shown) being etched in a more uniform manner than conventional plasma etching. Consequently, the surface of the substrate is etched more uniformly. Plasma processes using homogeneous plasma volumes can achieve high uniformity without the necessity of rotating the substrate.
  • Magnetron sputtering systems using homogenous plasma volumes accelerate ions in the high-density plasma towards the surface of the sputtering target in a more uniform manner than conventional magnetron sputtering. Consequently, the target material is deposited more uniformly on a substrate without the necessity of rotating the substrate and/or the magnetron. Also, the surface of the sputtering target is eroded more evenly and, thus higher target utilization is achieved.
  • target material can be applied to the first 210 and/or the second anode 226 to reduce possible contamination from sputtering undesired material.
  • the second power supply 222 can be a pulsed power supply that generates high-power pulses between the inner cathode section 202a and the second anode 226 after the high-density plasma is formed in the region 214 and diffuses into the region 252 proximate to the inner cathode section 202a.
  • the desired power level of the high-power pulses depends on several factors including the volume and other characteristics of the plasma such as the density of the high-density plasma. In one embodiment, the power level of the high-power pulse is in the range of about 1 kW to 10MW.
  • Each of the high-power pulses is maintained for a predetermined time that can be in the range of one microsecond to ten seconds.
  • the repetition frequency or repetition rate of the high-power pulses can be in the range of between about 0.1 Hz and 1 kHz.
  • the average power generated by the second power supply 222 can be less than one megawatt depending on the desired volume and characteristics of the plasma.
  • the thermal energy in the inner cathode section 202a and/or the second anode 226 can be conducted away or dissipated by liquid or gas cooling such as helium cooling (not shown).
  • Tne high-power pulses generate an electric field 254 (FIG. 2B) between the inner cathode section 202a and the second anode 226.
  • the electric field 254 can be a pulsed electric field, a quasi-static electric field or an alternating electric field. The strength and the position of the electric field 254 will be discussed in more detail herein.
  • the second power supply 222 generates high power pulses that launch additional power into the already strongly ionized plasma and, therefore, super-ionize the high- density plasma in the region 252.
  • the discharge current can be on the order of 5kA with a discharge voltage that is in the range of about 50V to 500V for a pressure that is in the range of about 5mTorr to 1 OTorr.
  • an initial plasma is generated in the region 214 and the initial plasma diffuses to the region 252 as additional feed gas is supplied to the region 214.
  • the gap 212 is dimensioned to create a pressure differential between the region 214 and the region 252.
  • the pressure differential forces the initial plasma that is generated in the region 214 into the region 252.
  • the second power supply 222 applies high-power pulses between the inner cathode section 202a and the second anode 226 after a suitable volume of initial plasma is present in the region 252.
  • the high-power pulses create an electric field 254 between the inner cathode section 202b and the second anode 226 that strongly-ionizes the initial plasma thereby creating a high-density plasma in the region 252.
  • feed gas 236 from the feed gas source 240 flows between the second anode 226 and the inner cathode section 202a at various times during the plasma generation process.
  • This additional feed gas 236 can be a noble gas, a reactive gas, or a mixture of gases.
  • the additional feed gas 236 can facilitate a more efficient plasma generation process and/or can- result in a higher density plasma.
  • a voltage generated by the second power supply 222 is sufficient to ignite a second plasma (not shown) from the feed gas 236 in the region 255 between the second anode 226 and the inner cathode section 202a.
  • This second plasma flows from the region 255 into the region 252 as the second plasma is displaced by more feed gas 236.
  • the second plasma from the region 255 can commingle with the initial plasma from the region 214 in the region 252.
  • a plasma diverting plate 256 (FIG. 2B) is disposed proximate to the second anode 226 to divert the second plasma from the region 255 toward the inner cathode section 202a and/or towards the region 214.
  • the size, shape, and location of the plasma diverting plate 256 depend on the desired plasma properties of the second plasma.
  • target material can be applied to the plasma diverting plate 256 to reduce possible contamination from sputtering undesired material.
  • Controlling the flow of the feed gases 234, 236 through the regions 214, 255, respectively, can affect the homogeneity, distribution profile, and density of the plasma. Additionally, controlling certain parameters, such as power and pulse rate of the first 206 and the second power supplies 222 (FIG. 2A) can also affect the homogeneity, distribution profile, and density of the plasma.
  • the plasma generating apparatus 200 of the present invention generates a relatively high electron temperature plasma and a relatively high-density plasma.
  • One application for the high-density plasma of the present invention is ionized physical vapor deposition (IPVD) (not shown), which is a technique that converts neutral sputtered atoms into positive ions to enhance a sputtering process.
  • IPVD physical vapor deposition
  • FIG. 2B illustrates a cross-sectional view of the segmented cathode of FIG. 2A.
  • FIG. 2B shows that one or both of the electric fields 250, 254 can facilitate a multi-step ionization process of the feed gases 234, 236, respectively, that substantially increases the rate at which the high-density plasma is formed.
  • At least one of the feed gases 234, 236 can be a molecular gas.
  • the electric fields 250, 254 enhance the formation of ions in the plasma.
  • the multi-step or stepwise ionization process is described as follows with reference to the electric field 250 between the outer cathode section 202b and the first anode 210.
  • a pre-ionizing voltage is applied between the outer cathode section 202b and the first anode 210 across the feed gas 234 to form an initial plasma.
  • the initial plasma can be a weakly-ionized plasma as previously discussed.
  • the initial plasma is generally formed in the region 214 and diffuses or is transported to the region 252 as the feed gas 234 continues to flow.
  • a magnetic field is generated in the region 214 and extends proximate to the center of the inner cathode section 202a. This magnetic field tends to assist in diffusing electrons in the initial plasma from the region 214 to the region 252.
  • the electrons in the initial plasma are substantially trapped in the region 252 by the magnetic field.
  • the volume of initial plasma in the region 214 can be rapidly exchanged with a new volume of feed gas 234.
  • FIG. 2A applies a high-power pulse between the outer cathode section 202b and the first anode 210.
  • This high-power pulse generates the electric field 250 in the region 214.
  • the electric field 250 results in collisions occurring between neutral atoms, electrons, and ions in the initial plasma. These collisions generate numerous excited atoms in the initial plasma.
  • the excited atoms can include atoms that are in a metastable state.
  • the electric field 250 can be a strong electric field that facilitates a multi- step ionization process of an atomic feed gas that significantly increases the rate at which the high-density plasma is formed.
  • the multi-step ionization process has an efficiency that increases as the density of excited atoms in the initial plasma increases.
  • the strong electric field 250 enhances the formation of ions of a molecular or atomic feed gas.
  • the dimensions of the gap 212 between the outer cathode section 202b and the first anode 210 are chosen so as to maximize the rate of excitation of the atoms.
  • the value of the electric field 250 in the region 214 depends on the voltage level applied by the first power supply 206 and the dimensions of the gap 212.
  • the strength of the electric field 250 can be in the range of about 2V/cm to 10 V/cm depending on various system parameters and operating conditions of the plasma system.
  • j ne S j ze 0 f he gap 212 can be in the range of about 0.30cm to 1 0cm depending on various parameters of the desired plasma.
  • the electric field 250 in the region 214 is rapidly applied to the initial plasma.
  • the rapidly applied electric field 250 can be generated by applying a voltage pulse having a rise time that is in the range of about 0.1 microsecond to ten seconds.
  • the dimensions of the gap 21 2 and the parameters of the applied electric field 250 are varied in order to determine the optimum condition for a relatively high rate of excitation of the atoms in the region 214. Since an argon atom requires energy of about 1 1 .55eV to become excited, the applied electric field 250 can be adjusted to maximize the excitation rate of the argon atoms. As argon feed gas 234 flows through the region 214, the initial plasma is formed and many of the atoms in the initial plasma then become excited by the applied electric field 250. Thus, the vast majority of ground state feed gas atoms are not directly ionized, but instead undergo a stepwise ionization process.
  • excited atoms in the initial plasma then encounter electrons that are in the region 214.
  • excited argon atoms only require about 4eV of energy to ionize while argon ground state atoms require about 1 5.76eV of energy to ionize. Therefore, when energy is applied in the region 214, the excited atoms will ionize at a much higher rate than the ground state atoms.
  • Ions in the high- density plasma strike the outer cathode section 202b causing secondary electron emission from the outer cathode section 202b. These secondary electrons interact with neutral or excited atoms in the high-density plasma. This process further increases the density of ions in the high-density plasma as the feed gas 234 is exchanged.
  • Ar represents an excited argon atom in the initial plasma.
  • the excited argon atoms generally require less energy to become ionized than neutral ground state argon atoms.
  • the excited atoms tend to more rapidly ionize near the surface of the outer cathode section 202b than the neutral ground state argon atoms.
  • the efficiency of the ionization process rapidly increases. This increased efficiency eventually results in an avalanche-like increase in the density of the high- density plasma.
  • the proportion of the energy applied to the initial plasma, which is transformed to the excited atoms is very high for a pulsed discharge in the feed gas 234.
  • the density of the plasma is increased by controlling the flow of the feed gas 234 in the region 214.
  • a first volume of feed gas 234 is supplied to the region 214.
  • the first volume of feed gas 234 is then ionized to form an initial plasma in the region 214.
  • the first power supply 206 then applies a high-power electrical pulse across the initial plasma.
  • the high-power electrical pulse generates a high-density plasma from the initial plasma.
  • the second power supply 222 (FIG. 2A) then applies a high-power electrical pulse between the inner cathode section 202a and the second anode 226.
  • the density of the plasma is generally limited by the level and duration of the high-power electrical pulse that can be absorbed before the discharge contracts and terminates.
  • Increasing the flow rate of at least one of the feed gases 234, 236 can increase the level and duration of the high-power electrical pulse that can be absorbed by the discharge.
  • Any type of gas exchange means can be used to rapidly exchange the volume of feed gas.
  • the density of the plasma can be increased by transporting the initial plasma through the region 214 by a rapid volume exchange of feed gas 234.
  • feed gas 234 As the feed gas
  • the plasma generating system 200 can be configured for plasma etching. In another embodiment, the plasma generating system 200 can be configured for plasma sputtering. In particular, the plasma generating system 200 can be configured for sputtering magnetic materials.
  • Known magnetron sputtering systems generally are not suitable for sputtering magnetic materials because the magnetic field generated by the magnetron can be absorbed by the magnetic target material.
  • RF diode sputtering is sometimes used to sputter magnetic materials. However, RF diode sputtering generally has poor film thickness uniformity and produces relatively low deposition rates.
  • the plasma generating system 200 can be adapted to sputter magnetic materials by including a target assembly (not shown) having a magnetic target material and by driving that target assembly with an RF power supply (not shown).
  • an RF power supply can provide an RF power that is about 1 OkW.
  • a substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly.
  • the high-density plasma is generated by applying a strong electric field across the initial plasma as described herein.
  • the RF power supply applies a negative voltage bias to the target assembly. Ions in the high-density plasma bombard the target material thereby causing sputtering.
  • the plasma generating system 200 can also be adapted to sputter dielectric materials.
  • Dielectric materials can be sputtered by driving a target assembly (not shown) including a dielectric target material with an RF power supply (not shown).
  • an RF power supply can provide an RF power that is about 1 OkW.
  • a substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly.
  • a magnetic field is generated proximate to the target assembly in order to trap electrons in the initial plasma.
  • the high-density plasma is generated by applying a strong electric field across the initial plasma as described herein.
  • the RF power supply applies a negative voltage bias to the target assembly. Ions in the high-density plasma bombard the target material thereby causing sputtering.
  • a high-density plasma according to the present invention can be used to generate an ion beam.
  • An ion beam source according to the present invention includes the plasma generating system 200 and an external electrode (not shown) that is used to accelerate ions in the plasma.
  • the external electrode is a grid.
  • the ion beam source can generate a very high-density ion flux.
  • the ion beam source can generate ozone flux.
  • Ozone is a highly reactive oxidizing agent that can be used for many applications such as cleaning process chambers, deodorizing air, purifying water, and treating industrial wastes, for example.
  • FIG. 3 illustrates a cross-sectional view of a plasma generating apparatus 300 including a magnet assembly 302 according to the invention.
  • the magnet assembly 302 can include permanent magnets 304, or alternatively, electro-magnets (not shown).
  • the magnet assembly 302 is adapted to create a magnetic field 306 proximate to the inner cathode section 202a.
  • the configuration of the magnet assembly 302 can be varied depending on the desired shape and strength of the magnetic field 306.
  • the magnet assembly 302 can have either a balanced or unbalanced configuration.
  • the magnet assembly 302 includes switching electromagnets, which generate a pulsed magnetic field proximate to the inner cathode section 202a.
  • additional magnet assemblies can be placed at various locations around and throughout the process chamber (not shown).
  • y ne magnetic assembly 302 can be configured to generate a magnetic field in the shape of one or more racetracks (not shown). Magnetic fields in the shape of one or more racetracks can improve target utilization in sputtering targets by distributing regions of highest target erosion across the surface of the target. These regions of high target erosion generally correspond to locations in which the magnetic field lines are parallel to the surface of the target.
  • the magnetic field 306 is generated proximate to the inner cathode section 202a.
  • the permanent magnets 304 continuously generate the magnetic field 306.
  • Electro-magnets can also generate the magnetic field 306.
  • the strength of the magnetic field 306 can be in the range of about fifty gauss to two thousand gauss.
  • the first power supply 206 generates an electric field across the feed gas
  • the feed gas 234 flows through the region 214 and continuously displaces the initial plasma.
  • the initial plasma diffuses into the region 252' and the magnetic field 306 traps electrons in the initial plasma.
  • a large fraction of the electrons are concentrated in the region 308 that corresponds to the weakest area of the magnetic field 306 that is generated by the magnet assembly 302. By trapping the electrons in the region 308, the magnetic field 306 substantially prevents the initial plasma from diffusing away from the inner cathode section 202a.
  • the second power supply 222 generates a strong-electric field between the second anode 226 and the inner cathode section 202a.
  • the strong electric field super-ionizes the initial plasma to generate a high-density plasma having an ion density that is greater than the ion density of the initial plasma.
  • the initial plasma has an ion density that is in the range of about 10 to 10 cm
  • the high-density plasma has an ion density that is greater than about 10 cm
  • the magnetic field 306 can improve the homogeneity of the- high-density plasma.
  • the magnetic field 306 can also increase the ion density of the high-density plasma by trapping electrons in the initial plasma and also by trapping secondary electrons proximate to the inner cathode section 202a. The trapped electrons ionize excited atoms in the initial plasma thereby generating the high-density plasma.
  • a magnetic field is generated in the region 214 that substantially traps electrons in the area where the initial plasma is ignited.
  • the magnetic field 306 also promotes increased homogeneity of the high-density plasma by setting up a substantially circular electron ExB drift current 310 proximate to the inner cathode section 202a.
  • the electron ExB drift current 31 0 generates a magnetic field that interacts with the magnetic field 306 generated by the magnet assembly 302.
  • the substantially circular electron ExB ⁇ rift current 310 generates a magnetic field that interacts with the magnetic field 306 generated by the magnet assembly 302.
  • the magnetic field generated by the electron ExBd ft current 310 has a direction that is substantially opposite to the magnetic field 306 generated by the magnet assembly 302.
  • the magnitude of the magnetic field generated by the electron ExB drift current 310 increases with increased electron ExB d ft current 310.
  • the homogeneous diffusion of the high- density plasma in the region 252' is caused, at least in part, by the interaction of the magnetic field 306 generated by the magnet assembly 302 and the magnetic field generated by the electron ExB drift current 310.
  • the electron ExB drift current 310 defines a substantially circular shape for low current density plasma.
  • the substantially circular electron ExB drift current 310 tends to have a more complex shape as the interaction of the magnetic field 306 generated by the magnet assembly 302, the electric field generated by the high-power pulse, and the magnetic field generated by the electron ExB drift current 310 becomes more acute.
  • the electron ExB drift current 310 has a substantially cycloidal shape. The exact shape of the electron ExB drift current 310 can be quite elaborate and depends on various factors.
  • the interaction of the magnetic field 306 generated by the magnet assembly 302 and the magnetic field generated by the electron £ ⁇ -?drift current 310 generates magnetic field lines that are somewhat more parallel to the surface of the inner cathode section 202a than the magnetic field lines generated by the magnet assembly 302.
  • the somewhat more parallel magnetic field lines allow the high-density plasma to more uniformly distribute itself in the area 252'.
  • the high-density plasma is substantially uniformly diffused in the area 252'.
  • FIG. 4 illustrates a graphical representation 400 of applied power as a function of time for periodic pulses applied to an initial plasma in the plasma generating system 200 of FIG. 2A.
  • the first power supply 206 generates a constant power and the second power supply 222 generates periodic power pulses.
  • the feed gas 234 flows into the region 214 between the outer cathode section 202b and the first anode 210 at time t , before either the first power supply 206 or the second power supply 222 are activated.
  • the first power supply 206 generates a power 402 that is in the range of about 0.01 kW to 1 OOkW and applies the power 402 between the outer cathode section 202b and the anode 210.
  • the power 402 causes the feed gas 234 to become at least partially ionized, thereby generating an initial plasma that can be a pre-ionization plasma as previously discussed.
  • An additional volume of feed gas flows into the region 214 (FIG. 2A) between time t and time t substantially displacing the initial plasma.
  • the initial plasma is displaced into the region 252 proximate to the inner cathode section 202a.
  • the second power supply 222 delivers a high-power pulse 404 to the initial plasma that is in the range of about 1 kW to 10MW depending on the volume and characteristics of the plasma and the operating pressure.
  • the high-power pulse 404 delivers a high-power pulse 404 to the initial plasma that is in the range of about 1 kW to 10MW depending on the volume and characteristics of the plasma and the operating pressure.
  • the high-power pulse 404 has a leading edge 406 having a rise time from t to t
  • the second power supply 222 is a pulsed power supply.
  • the second power supply 222 can be an RF power supply, an AC power supply, or a DC power supply.
  • the pulse width of the high-power pulse 404 is in the range of about one microsecond to ten seconds.
  • the high-power pulse 404 is terminated at time t .
  • the power 402 from the first power supply 206 is continuously applied to generate additional plasma from the flowing feed gas 234, while the second power supply 222 prepares to deliver another high-power pulse 408.
  • the second power supply 222 delivers another high-power pulse 408 having a rise time from t to t and terminating at time t .
  • the second power supply 222 delivers another high-power pulse 408 having a rise time from t to t and terminating at time t .
  • the 5 6 7 repetition rate of the high-power pulses is in the range of about 0.1 Hz to 10kHz.
  • the particular size, shape, width, and frequency of the high-power pulse 408 depend on the process parameters, such as the operating pressure, the design of the second power supply 222, the presence of a magnetic field proximate to the inner cathode section 202a, and the volume and characteristics of the plasma, for example.
  • the shape and duration of the leading edge 406 and the trailing edge 410 of the high- power pulse 404 are chosen to control the rate of ionization of the high-density plasma.
  • the first power supply 206 and/or the second power supply 222 are activated at time t before the feed gas 234 flows in the region 214.
  • the feed gas 234 is injected between the outer cathode section 202b and the first anode 210 where it is ignited by the first power supply 206 to generate the initial plasma.
  • the first power supply 202 is a DC power supply. In other embodiments (not shown), the first power supply 202 can an RF power supply, an AC power supply, or a pulsed power supply.
  • FIG. 5 illustrates a cross-sectional view of a plasma generating apparatus 500 including the magnet assembly 302 of FIG. 3 and an additional magnet assembly 502 according to the invention.
  • the additional magnet assembly 502 can include a permanent magnets 504 as shown, or alternatively, electro-magnets (not shown).
  • the magnet assembly 502 is adapted to create a magnetic field 506 proximate to the outer cathode section 202b.
  • the configuration of the magnet assembly 502 can be varied depending on the desired shape and strength of the magnetic field 506.
  • the magnet assembly 502 can have either a balanced or unbalanced configuration.
  • the magnet assembly 502 includes switching electromagnets, which generate a pulsed magnetic field proximate to the outer cathode section 202b.
  • additional magnet assemblies can be placed at various locations around and throughout the process chamber (not shown).
  • the plasma generating apparatus 500 is operated by generating the magnetic field 506 proximate to the outer cathode section 202b.
  • the permanent magnets 504 continuously generate the magnetic field 506.
  • electro-magnets (not shown) generate the magnetic field 506 by energizing a current source (not shown) that is coupled to the electro-magnets.
  • the strength of the magnetic field 506 is in the range of about fifty gauss to two thousand gauss.
  • the first power supply 206 generates an electric field across the feed gas 234 to ignite an initial plasma in the region 214.
  • the magnetic field 506 substantially traps electrons in the initial plasma in the region 214. This causes the initial plasma to remain concentrated in the region 214.
  • the first power supply 206 applies a high-power pulse across the initial plasma thereby generating a high-density plasma in the region 214.
  • the high-power pulse energizes the electrons in the initial plasma.
  • the magnetic field 506 causes the electrons to move in a substantially circular manner creating a substantially circular electron ExB drift current (not shown) proximate to the outer cathode section 202b.
  • the electron £v_7drift current generates a magnetic field that interacts with the magnetic field 506 generated by the magnet assembly 502.
  • the high-power pulses applied between the outer cathode section 202b and the first anode 210 generate secondary electrons from the outer cathode section 202a that move in a substantially circular motion proximate to the inner cathode section 202a according to crossed electric and magnetic fields.
  • the substantially circular motion of the electrons generates the electron ExB drift current.
  • the magnitude of the electron ExB drift current is proportional to the magnitude of the discharge current in the plasma and, in one embodiment, is approximately in the range of between about three and ten times the magnitude of the discharge current. As previously discussed, the electron ExB drift current can improve the homogeneity of the high-density plasma in the region 214.
  • FIG. 6 illustrates a cross-sectional view of a plasma generating apparatus 550 including the magnet assembly 302 of FIG. 3 and an additional magnet assembly 552 according to the invention.
  • the additional magnet assembly 552 can include permanent magnets 554, 556, or alternatively, electro-magnets (not shown).
  • the magnet assembly 552 is adapted to create a magnetic field 558 proximate to the outer cathode section 202b.
  • the configuration of the magnet assembly 552 can be varied depending on the desired shape and strength of the magnetic field 558.
  • the magnet assembly 552 can have either a balanced or unbalanced configuration.
  • a Sma generating apparatus 550 functions similarly to the plasma generating apparatus 500 of FIG. 5.
  • the magnetic assembly 552 that is located proximate to the outer cathode section 202b generates magnetic field lines 560 that are substantially perpendicular to a surface of the outer cathode section 202b.
  • the perpendicular magnetic field lines 560 completely cross the region 214, thereby trapping substantially all of the electrons in the region 214.
  • the magnetic field 558 can facilitate a more efficient process of generating the initial plasma in the region 214.
  • Skilled artisans will appreciate that alternative magnet configurations can be used within the scope of the invention.
  • FIG. 7 illustrates a cross-sectional view of another embodiment of a plasma generating apparatus 600 including a magnet assembly 602 according to the invention.
  • the magnet assembly 602 can include permanent magnets 604, or alternatively, electro-magnets (not shown).
  • the magnet assembly 602 is adapted to create a magnetic field 606 that is located proximate to the inner cathode section 202a and proximate to the outer cathode section 202b.
  • the configuration of the magnet assembly 602 can be varied depending on the desired shape and strength of the magnetic field 606.
  • the magnet assembly 602 can have either a balanced or unbalanced configuration.
  • the magnet assembly 602 includes switching electromagnets, which generate a pulsed magnetic field proximate to the inner 202a and the outer cathode sections 202b.
  • additional magnet assemblies can be placed at various locations around and throughout the process chamber (not shown).
  • the permanent magnets 604 continuously generate the magnetic field 606.
  • electro-magnets (not shown) generate the magnetic field 606 by energizing a current source (not shown) that is coupled to the electro-magnets.
  • the strength of the magnetic field 606 is in the range of about fifty gauss to two thousand gauss.
  • the feed gas 234 from the gas source 238 is supplied between the outer cathode section 202b and the first anode 210. A volume of the feed gas 234 fills in the region 214.
  • the first power supply 206 generates an electric field across the feed gas
  • the initial plasma is concentrated proximate to the outer edge of the inner cathode section 202a.
  • the second power supply 222 generates a strong electric field between the second anode 226 and the inner cathode section 202a.
  • the strong electric field super-ionizes the initial plasma to generate a high-density plasma having an ion density that is greater than the ion density of the initial plasma.
  • the initial plasma has an ion density in the of about 10 to 10 cm .
  • the high-density plasma has an ion density that is greater than about 10
  • the high-density plasma is used in a magnetron sputtering system (not shown).
  • the magnetron sputtering system includes a target (not shown) that can be integrated into the inner cathode section 202a.
  • Operating parameters can be chosen such that the outer edge of the target is eroded at a relatively high rate compared with the center of the target because the high-density plasma is concentrated in the region 608.
  • a sputtering system according to the present invention can include a target that is relatively small compared with known sputtering systems for similarly sized substrates (not shown).
  • the power level of the high-power pulse can be chosen such that the high-density plasma can be homogeneously distributed across the target as described herein.
  • the magnetic field 606 can improve the homogeneity of the high-density plasma and can increase the ion density of the high-density plasma by trapping electrons in the initial plasma and also trapping secondary electrons proximate to the target. The trapped electrons ionize excited atoms in the initial plasma thereby generating the high-density plasma.
  • the magnetic field 606 also promotes increased homogeneity of the high-density plasma by setting up an electron ExB drift current 610 proximate to the target.
  • the electron £x.?drift current 610 generates a magnetic field that interacts with the magnetic field 606 generated by the magnet assembly 602 as described herein.
  • FIG. 8 illustrates a cross-sectional view of a plasma generating apparatus 650 including a magnet configuration that includes a first magnet 652 and a second magnet 654 according to the invention.
  • the first 652 and the second magnets 654 can be any type of magnet, such as a permanent ring-shaped magnet or an electromagnet, for example.
  • the plasma generating apparatus 650 also includes a segmented cathode 656.
  • the segmented cathode 656 (656a, b) includes an inner cathode section 656a and an outer cathode section 656b.
  • the outer cathode section 656b is disposed generally opposite to the inner cathode section 656a, but can be offset as shown in FIG. 8.
  • the segmented cathode 656 illustrated in FIG. 8 can reduce sputtering contamination compared with known cathodes used in sputtering systems because both the inner cathode section 656a and the outer cathode section 656b can include target material (not shown). Consequently, any material that is sputtered from the outer cathode section 656b is target material instead of cathode material that could contaminate the sputtering process.
  • the plasma generating apparatus 650 also includes an anode 658.
  • the anode 658 is disposed proximate to the inner cathode section 656a and the outer cathode section 656b.
  • the first output 220 of the second power supply 222 is coupled to the inner cathode section 656a and the second output 224 of the second power supply 222 is coupled to an input 660 of the anode 658.
  • a first output 662 of a first power supply 664 is coupled to the outer cathode section 656b.
  • a second output 666 of the first power supply 664 is coupled to the input 660 of the anode 658.
  • the anode 658 is coupled to ground potential and the second output 224 of the second power supply 222 as well as the second output 666 of the first power supply 664 are also coupled to ground potential.
  • the plasma generating apparatus 650 operates in a similar manner to the plasma generating apparatus 200 of FIG. 2A.
  • the magnetic field 668 generated by the first 652 and the second magnets 654 is substantially parallel to at least a portion of the surface of the inner cathode section 656a.
  • the shape of the magnetic field 668 can result in a homogeneous plasma volume that is located proximate to the inner cathode section 656a as discussed herein.
  • the magnetic field 668 traps substantially all of the secondary electrons from the inner 656a and the outer cathode sections 656b due to the configuration of the first 652 and the second magnets 654.
  • feed gas 234 from the gas source 238 flows in the region 214 between the anode 658 and the outer cathode section 656b.
  • the feed gas source 240 supplies feed gas 236 between the inner cathode section 656a and the anode 658.
  • the first power supply 664 generates an electric field across the feed gas 234 that generates an initial plasma in the region 214. Electrons in the initial plasma diffuse along the magnetic field lines of the magnetic field 668. Due to the configuration of the magnets 652 and 654, substantially all of the electrons in the initial plasma are trapped by the magnetic field 668. The initial plasma diffuses towards the inner cathode section 656a as the feed gas 234 continues to flow.
  • the second power supply 222 After- a suitable volume of the initial plasma is located proximate to the inner cathode section 656a, the second power supply 222 generates a strong electric field between the inner cathode section 656a and the anode 658.
  • the strong electric field super-ionizes the initial plasma and generates a high-density plasma having an ion density that is higher than the ion density of the initial plasma.
  • FIG. 9 illustrates a cross-sectional view of a plasma generating apparatus 700 according to the present invention including a segmented cathode assembly 702 (702a, b), an ionizing electrode 708, and a first 206, a second 222 and a third power supply 704.
  • the first 206, the second 222, and the third power supplies 704 can each be any type of power supply suitable for plasma generation, such as a pulsed power supply, a RF power supply, a DC power supply, or an AC power supply.
  • the first 206, the second 222, and/or the third power supplies 704 operate in a constant power or constant voltage mode as described herein.
  • the plasma generating apparatus 700 also includes a first anode 210 and a second anode 706.
  • the ionizing electrode 708 is a filament-type electrode.
  • the ionizing electrode 708 can be ring- shaped or any other shape that is suitable for generating an initial plasma in the region 214.
  • Isolators 709 insulate the inner cathode section 702a from the outer cathode section 702b.
  • the isolators 709 also insulate the second anode 706 from the inner 702a and the outer cathode sections 702b.
  • a first output 710 of the third power supply 704 is coupled to the ionizing electrode 708.
  • a second output 712 of the third power supply 704 is coupled to the outer cathode section 702b.
  • the power generated by the third power supply 704 is sufficient to ignite a feed gas 234 located in the region 214 to generate an initial plasma.
  • the first output 204 of the first power supply 206 is coupled to the outer cathode section 702b.
  • the second output 208 of the first power supply 206 is coupled to the first anode 210.
  • the power generated by the first power supply 206 is sufficient to increase the ion density of the initial plasma in the region 214.
  • the first output 220 of the second power supply 222 is coupled to the inner cathode section 702a.
  • the second output 224 of the second power supply 222 is coupled to the second anode 706.
  • the first power supply 206 is a pulsed power supply that applies a high-power pulse between the outer cathode section 702b and the first anode 210.
  • the high-power pulse generates an electric field (not shown) through the region 214.
  • the electric field generates a high-density plasma from the initial plasma that is generated by the ionizing electrode 708.
  • the high-density plasma is generally more strongly ionized than the initial plasma.
  • the feed gas 234 continues to flow after the high-density plasma is generated in the region 214.
  • the feed gas 234 displaces the high-density plasma towards the inner cathode region 702a.
  • the feed gas exchange continues until a suitable volume of the high-density plasma is located proximate to the inner cathode section 702a.
  • the second power supply 222 is a pulsed power supply that applies a high-power pulse across the high-density plasma.
  • the high-power pulse generates an electric field (not shown) between the inner cathode section 702a and the second anode 706.
  • the electric field generates a plasma that is generally more strongly-ionized than the high-density plasma.
  • the plasma generating apparatus 700 of the present invention generates a very high-density plasma using standard power supplies.
  • the plasma generating apparatus 700 of the present invention can generate a very high-density plasma at a lower cost compared with a known plasma generating apparatus because the plasma generating apparatus 700 can use relatively inexpensive and commercially available power supplies.
  • the sputtering targets that are used in the plasma generating apparatus 700 can be much smaller relative to comparable sputtering targets that are used in known magnetron sputtering systems used to process similarly sized substrates.
  • FIG. 1 0 illustrates a cross-sectional view of a plasma generating apparatus 720 according to the present invention including a segmented cathode assembly 722 (722a, b), a common anode 724, an ionizing electrode 708, and a first 206, a second 222, and a third power supply 704.
  • the first 206, the second 222, and the third power supplies 704 can each be any type of power supply suitable for plasma generation, such as a pulsed power supply, a RF power supply, a DC power supply, or an AC power supply.
  • the first 206, the second 222, and/or the third power supplies 704 operate in a constant power or constant voltage mode as described herein.
  • the ionizing electrode 708 is a filament-type electrode.
  • the ionizing electrode 708 can be ring- shaped or any other shape that is suitable for generating an initial plasma in the region 214.
  • An isolator 726 insulates the anode 724 from the inner cathode section 722a.
  • An isolator 728 insulates the anode 724 from the outer cathode section 722b.
  • the segmented cathode assembly 722 illustrated in FIG. 10 can reduce sputtering contamination compared with known cathodes used in sputtering systems because both the inner cathode section 722a and the outer cathode section 722b can include target material (not shown). Consequently, any material that is sputtered from the outer cathode section 722b is target material instead of cathode material that could contaminate the sputtering process.
  • a first output 710 of the third power supply 704 is coupled to the ionizing electrode 708.
  • a second output 712 of the third power supply 704 is coupled to the outer cathode section 722b.
  • the power generated by the third power supply 704 is sufficient to ignite a feed gas 234 located in the region 214 to generate an initial plasma.
  • the first output 204 of the first power supply 206 is coupled to the anode 724.
  • the second output 208 of the first power supply 206 is coupled to the outer cathode section 722b.
  • the power generated by the first power supply 206 is sufficient to increase the ion density of the initial plasma in the region 214.
  • the first output 220 of the second power supply 222 is coupled to the inner cathode section 722a.
  • the second output 224 of the second power supply 222 is coupled to the anode 724.
  • the first power supply 206 is a pulsed power supply that applies a high-power pulse between the outer cathode section 722b and the anode 724.
  • the high-power pulse generates an electric field through the region 214.
  • the electric field generates a high-density plasma from the initial plasma.
  • the high-density plasma is generally more strongly ionized than the initial plasma.
  • the feed gas 234 continues to flow after the high-density plasma is generated in the region 214.
  • the feed gas 234 displaces the high-density plasma towards the inner cathode region 722a.
  • the feed gas exchange continues until a suitable volume of the high-density plasma is located proximate to the inner cathode section 722a.
  • the second power supply 222 is a pulsed power supply that applies a high-power pulse across the high-density plasma.
  • the high-power pulse generates a strong electric field between the inner cathode section 722a and the anode 724.
  • the strong electric field generates a plasma that is generally more strongly-ionized than the high-density plasma.
  • FIG. 1 1 illustrates a cross-sectional view of a plasma generating apparatus 725 according to the present invention including the segmented cathode assembly 702 (702a, b) and a first 206, a second 222 and a third power supply 704.
  • the first 206, the second 222, and the third power supplies 704 can each be any type of power supply suitable for plasma generation, such as a pulsed power supply, a RF power supply, a DC power supply, or an AC power supply.
  • the first 206, the second 222, and/or the third power supplies 704 operate in a constant power or constant voltage mode as described herein.
  • the first 206 and the third power supplies 704 can be integrated into a single power supply.
  • the plasma generating apparatus 725 also includes a first anode 210 and a second anode 706. Isolators 709 insulate the inner cathode section 702a from the outer cathode section 702b and insulate the second anode 706 from the inner 702a and the outer cathode sections 702b.
  • a first output 710 of the third power supply 704 is coupled to the outer cathode section 702b.
  • a second output 712 of the third power supply 704 is coupled to the first anode 210.
  • the power generated by the third power supply 704 is sufficient to ignite a feed gas 234 located in the region 214 to generate an initial plasma.
  • a first output 204 of the first power supply 206 is coupled to the outer cathode section 702b.
  • a second output 208 of the first power supply 206 is coupled to the first anode 210.
  • a first output 220 of the second power supply 222 is coupled to the inner cathode section 702a.
  • a second output 224 of the second power supply 222 is coupled to the second anode 706.
  • the power generated by the first power supply 206 is sufficient to increase the ion density of the initial plasma in the region 214 that is generated by the third power supply 704.
  • the first power supply 206 is a pulsed power supply that applies a high-power pulse between the outer cathode section 702b and the first anode 210.
  • the high-power pulse generates an electric field through the region 214.
  • the electric field generates a high-density plasma from the initial plasma.
  • the high-density plasma is generally more strongly ionized than the initial plasma.
  • the feed gas 234 continues to flow after the high-density plasma is generated in the region 214.
  • the feed gas 234 displaces the high-density plasma towards the inner cathode region 702a.
  • the feed gas exchange continues until a suitable volume of the high-density plasma is located proximate to the inner cathode section 702a.
  • the second power supply 222 is a pulsed power supply that applies a high-power pulse across the high-density plasma.
  • the high-power pulse generates a strong electric field between the inner cathode section 702a and the second anode 706.
  • the strong electric field generates a plasma that is generally more strongly-ionized than the high-density plasma.
  • the plasma generating apparatus 725 of the present invention generates a very high-density plasma using standard power supplies.
  • the plasma generating apparatus 725 of the present invention can generate a very high-density plasma at a lower cost compared with a known plasma generating apparatus because the plasma generating apparatus 725 can use relatively inexpensive and commercially available power supplies.
  • the first power supply 206 and the second power supply 222 can both be operated in constant power mode.
  • the first power supply 206 is operated in constant power mode and the second -power supply 222 is operated in constant voltage mode.
  • the first 206 and the second power supplies 222 are both operated in constant voltage mode.
  • FIG. 12 illustrates a cross-sectional view of a plasma generating apparatus 730 according to the present invention including a segmented cathode assembly 732 (732a, b), a second anode 706, a first 731 and a second power supply 222.
  • the outer cathode section is in the form of an excited atom source 732b.
  • the excited atom source 732b generates excited atoms including metastable atoms from ground state atoms in the feed gas 234.
  • the outer cathode section 732b is in the form of a hollow cathode. Skilled artisans will appreciate that multiple excited atom sources (not shown) can surround the inner cathode section 732a.
  • the first 731 and the second power supplies 222 can be any type of power supplies suitable for plasma generation, such as pulsed power supplies, RF power supplies, DC power supplies, or AC power supplies. In some embodiments, the first 731 and/or the second power supplies 222 operate in a constant power or constant voltage mode as described herein.
  • segmented cathode assembly 732 Only one portion of the segmented cathode assembly 732 is shown for illustrative purposes. In one embodiment, the portion that is not shown is substantially symmetrical to the portion shown in FIG. 12.
  • the inner cathode section 732a can be electrically isolated from the excited atom source 732b.
  • Isolators 709 insulate the second anode 706 from the inner cathode section 732a and the excited atom source 732b. '
  • the excited atom source 732b includes a tube 733.
  • the tube 733 can be formed of non-conducting material, such as a dielectric material, like boron nitride or quartz, for example.
  • a nozzle 734 is positioned at one end of the tube 733.
  • the nozzle 734 can be formed from a ceramic material.
  • the tube 733 is surrounded by an enclosure 735.
  • a skimmer 736 having an aperture 737 is positioned adjacent to the nozzle 734 forming a nozzle chamber 738.
  • the skimmer 736 can be connected to the enclosure 735.
  • the skimmer 736 is cone-shaped as shown in FIG. 12.
  • the enclosure 735 and the skimmer 736 are electrically connected to ground potential.
  • jhe tube 733 and the enclosure 735 define an electrode chamber 739 that is in fluid communication with a gas inlet 740.
  • a feed gas source (not shown) is coupled to the gas inlet 740 so as to allow feed gas 234 to flow into the electrode chamber 739.
  • An electrode 741 is positioned inside the electrode chamber 739 adjacent to the nozzle 734 and to the skimmer 736.
  • the electrode 741 is a needle electrode, as shown in FIG. 12. The needle electrode generates a relatively high electric field at the tip of the electrode.
  • the electrode 741 is electrically isolated from the skimmer 736.
  • a first output 742 of the first power supply 731 is coupled to the needle electrode
  • a second output 745 of the first power supply 737 is coupled to ground.
  • a first output 220 of the second power supply 222 is coupled to the inner cathode section 732a.
  • a second output 224 of the second power supply 222 is coupled to the second anode 706.
  • the second power supply 222 generates an electric field between the inner cathode section 732a and the second anode 706.
  • the plasma generating apparatus 730 of the present invention generates a high- density plasma using standard power supplies.
  • the plasma generating apparatus 730 of the present invention can generate a high-density plasma at a lower cost compared with known plasma generating apparatus because the plasma generating apparatus 730 can use relatively inexpensive and commercially available power supplies.
  • the sputtering targets that can be used in the plasma generating apparatus 730 can be much smaller relative to comparable sputtering targets that are used in known magnetron sputtering systems used to process similarly sized substrates.
  • the first power supply 731 and the second power supply 222 can both be operated in constant power mode.
  • the first power supply 731 is operated in constant power mode and the second power supply 222 is operated in constant voltage mode.
  • the first 731 and the second power supplies 222 are both operated in constant voltage mode.
  • ground state atoms in the feed gas 234 are supplied to the excited atom source 732b through the gas inlet 740.
  • the pressure in the electrode chamber 739 is optimized to produce exited atoms including metastable atoms by adjusting parameters, such as the flow rate of the feed gas 234, the diameter of the nozzle 734, and the diameter of the aperture 737 of the skimmer 736.
  • the first power supply 731 generates an electric field (not shown) between the needle electrode 741 and the skimmer 736.
  • the electric field raises the energy of the ground state atoms to an excited state that generates excited atoms. Many of the excited atoms are metastable atoms.
  • the electric field can also generate some ions and electrons along with the exited atoms.
  • Optional magnets 746 generate a magnetic field 747 proximate to the excited atom source 732b.
  • the magnetic field 747 can be used to assist in exciting the ground state atoms.
  • the magnetic field 747 traps accelerated electrons proximate to the electric field. Some of the accelerated electrons impact a portion of the ground state atoms, thereby transferring energy to those ground state atoms. This energy transfer excites at least a portion of the ground state atoms to create a volume of excited atoms including metastable atoms.
  • a portion of the volume of excited atoms as well as some ions, electrons and ground state atoms flow through the nozzle 734 into the nozzle chamber 738 as additional feed gas flows into the electrode chamber 739.
  • a large fraction of the ions and electrons are trapped in the nozzle chamber 738 while the excited atoms and the ground state atoms flow through the aperture 737 of the skimmer 736.
  • the second power supply 222 After a sufficient volume of excited atoms including metastable atoms is present proximate to the inner cathode section 732a, the second power supply 222 generates an electric field (not shown) proximate to the volume of excited atoms between the inner cathode section 732a and the second anode 706.
  • the electric field raises the energy of the volume of excited atoms causing collisions between neutral atoms, electrons, and excited atoms including metastable atoms. These collisions generate the plasma proximate to the inner cathode section 732a.
  • the plasma includes ions, excited atoms and additional metastable atoms. The efficiency of this multi-step ionization process increases as the density of excited atom and metastable atoms increases.
  • a magnetic field is generated proximate to the inner cathode section 732a.
  • the magnetic field can increase the ion density of the plasma by trapping electrons in the plasma and also by trapping secondary electrons proximate to the inner cathode section 732a.
  • All noble gas atoms have metastable states.
  • argon metastable atoms can be generated by a multi-step ionization process.
  • ionizing electrons e are generated by applying a sufficient voltage across argon feed gas containing ground state argon atoms.
  • a metastable argon atom and an electron are generated.
  • Argon has two metastable states, see Fabrikant, 1.1., Shpenik, O.B., Snegursky, A.V., and
  • the metastable argon atom is ionized.
  • the multi-step ionization process described herein substantially increases the rate at which the plasma is formed and, therefore, generates a relatively dense plasma.
  • the rate is increased because only a relatively small amount of energy is required to ionize the metastable atoms as described herein.
  • ground state argon atoms require energy of about 1 5.76eV to ionize.
  • argon metastable atoms require only about 4eV of energy to ionize.
  • the excited atom source 732b provides the energies of about 1 1 .55eV and 1 1.72eV that are necessary to reach argon metastable states. Therefore, a volume of metastable atoms will ionize at a much higher rate than a similar volume of ground state atoms for the same input energy.
  • the efficiency of the ionization process rapidly increases.
  • the increased efficiency results in an avalanche-like process that substantially increases the density of the plasma.
  • the ions in the plasma strike the inner cathode section 732a causing secondary electron emission from the inner cathode section 732a.
  • the secondary electrons interact with ground state atoms and with the excited atoms including the metastable atoms in the plasma. This interaction further increases the density of ions in the plasma as additional volumes of metastable atoms become available.
  • the plasma generating apparatus of the present invention can include an ion beam source (not shown) that generates an ion beam.
  • the ion beam is directed into the high-density plasma or at a substrate or work piece being processed.
  • the ion beam can be used to change the properties of the plasma or for ion beam assisted plasma processing.
  • the plasma generating apparatus of the present invention includes one or more process gas sources (not shown) that inject at least one process gas into the high-density plasma.
  • the process gas can undergo electron impact dissociation in the high-density plasma.
  • electro impact dissociation is defined herein to mean a process whereby molecules in the process gas are broken apart by an impacting electron having energy that is above the dissociation threshold of the molecules. Electron impact dissociation is used to enhance some processes, such as plasma enhanced chemical vapor deposition (CVD).
  • FIG. 13 illustrates a graphical representation 750 of power as a function of time for each of a first 206, a second 222, and a third power supply 704 for one mode of operating the plasma generating system 700 of FIG. 9.
  • the first 206, second 222, and third power supplies 704 are synchronized to each other to optimize certain properties of the plasma.
  • the third power supply 704 generates a constant power throughout the process, while the first 206 and the second power supplies 222 generate periodic power pulses at preset intervals.
  • FIG. 13 relates to the operation of FIG. 9, skilled artisans will appreciate that the plasma generating systems 720, 725 of FIG. 10 and FIG. 1 1 , respectively, can be operated in a similar manner to the plasma generating system 700 of FIG. 9. In one mode of operation, the first power supply 206 and the second power supply 222 are operated in a constant power mode.
  • the plasma generating apparatus 700 can operate as follows.
  • the third power supply 704 applies a constant power 752 in the range of about 0.1 kW to 1 OkW across the feed gas 234 to generate an initial plasma.
  • the power level required to generate the initial plasma depends on several factors including the dimensions of the region 214, for example.
  • the constant power 752 is applied between the ionizing electrode 708 and the outer cathode section 702b.
  • the initial plasma diffuses towards the inner cathode section 702a due to a pressure differential as described herein.
  • the pressure differential concentrates the initial plasma from the region 214 towards the inner cathode section 702a.
  • the second power supply 222 applies a constant power 754 in the range of about 0.1 kW to 10kW across the initial plasma to increase the ion density of the initial plasma and to sustain the initial plasma proximate to the inner cathode section 702a.
  • the time period between time t and time t is in the range of about 0.1 msec to 1 sec and depends on several parameters including the dimensions of the inner cathode section 702a, for example.
  • a sufficient volume of the initial plasma is located proximate to the inner cathode section 702a and an additional volume of initial plasma is generated in the region 214.
  • the first power supply 206 then applies a high power pulse 756 across the additional volume of initial plasma in the region 214 to generate a high- density plasma in the region 214.
  • the ion density of the high-density plasma is greater than the ion density of the initial plasma.
  • the high-power pulse 756 has a power level that is in the range of about 1 OkW to 1 ,000kW.
  • the time period between time t and time t is in the range of about 0.1 msec to 1 sec. 1 2
  • the high-density plasma that is generated in the region 214 diffuses toward the inner cathode section 702a due to the pressure differential.
  • the second power supply 222 applies a high-power pulse 758 to the high-density plasma in order to super-ionize the high-density plasma to further increase the plasma density.
  • time period between time t and time t is in the range of about 0.001 msec to
  • the time period of the high-power pulse 758 between time t and time t is in the range of about 0.1 msec to 1 Osec.
  • the first power supply 206 continues to apply the high-power pulse 756 in order to sustain the high-density plasma.
  • the high-power pulse 756 terminates.
  • the second power supply 222 continues to apply a background power 760 after the high-power pulse 758 terminates at time t .
  • the background power 760 continues to sustain the high- density plasma.
  • the time period between time t and time t is in the range of about 0.001 msec to 1 msec.
  • the high power pulse 756 generated by the first power supply 206 terminates.
  • the first power supply 206 applies another high-power pulse 6
  • the high-power pulse 762 increases the current density in the new volume of high-density plasma.
  • the new volume of high-density plasma diffuses towards the inner cathode section
  • the second power supply 222 applies another high-power pulse
  • the high-power pulse 764 terminates. At time t ,
  • the power from the third power supply 704 is continuously applied for a time that is in the range of about one microsecond to one hundred seconds in order to allow the initial plasma to form and to be maintained at a sufficient plasma density.
  • the power from the second power supply 222 can be continuously applied after the initial plasma is ignited in order to maintain the initial plasma.
  • the second power supply 222 can be designed so as to output a continuous nominal power in order to generate and sustain the initial plasma until a high-power pulse is delivered by the second power supply 222.
  • the high-power pulse has a leading edge having a rise time that is in the range of about 0.1 microseconds to ten seconds.
  • the high-power pulse 756 has a power and a pulse width that is sufficient to transform the initial plasma to a strongly-ionized high-density plasma.
  • the high- power pulse 756 is applied for a time that is in the range of about ten microseconds to ten seconds.
  • the repetition rate of the high-power pulses 756, 762 is in the range of about 0.1 Hz to 1 kHz.
  • the shape and duration of the leading edge and the trailing edge of the high-power pulse 756 is chosen to sustain the initial plasma while controlling the rate of ionization of the high-density plasma.
  • FIG. 14 illustrates a graphical representation 770 of power generated as a function of time for each of a first 206, a second 222, and a third power supply 704 for one mode of operating the plasma generating system 700 of FIG. 9.
  • the plasma generating apparatus 700 has many operating modes. For example, in this mode, the first power supply 206 is operated in voltage mode, while the second power supply can be operated in power mode.
  • the plasma generating apparatus 700 can operate as follows.
  • the third power supply 704 applies a constant power 772 in the range of about 0.1 kW to 1 OkW across the feed gas 234 to generate an initial plasma.
  • the power from the third power supply 704 is continuously applied for a time that is in the range of about one microsecond to one hundred seconds in order to allow the initial plasma to form and to be maintained at a sufficient plasma density.
  • the initial plasma diffuses towards the inner cathode section 702a.
  • the second power supply 222 applies a constant power 774 in the range of about 0.1 kW to 1 OkW across the initial plasma to increase the ion density of the initial plasma and to maintain/sustain the initial plasma proximate to the inner cathode section 702a.
  • a pressure differential forces the initial plasma from the region 214 towards the inner cathode region 702a.
  • the first power supply 206 applies a ramping power pulse 776 across the initial plasma in the region 214 in order to generate a high-density plasma in the region 214.
  • the ramping power pulse 776 has a power and a rise time that is sufficient to transform the initial plasma to a strongly-ionized high-density plasma.
  • the ramping power pulse 776 has a power that is in the range of about 1 OkW to
  • the ramping power pulse 776 is applied for a time that is in the range of between about ten microseconds to ten seconds.
  • the repetition rate between the ramping power pulses 776 is between about 0.1 Hz and 1 kHz.
  • the shape and duration of the leading edge and the trailing edge of the ramping power pulse 776 is chosen to sustain the initial plasma while controlling the rate of ionization of the high-density plasma.
  • the high-density plasma diffuses toward the inner cathode section 702a.
  • the second power supply 222 applies a high-power pulse 778 to the high-density plasma to generate a higher-density plasma.
  • the high- power pulse and the ramping power pulse 776 terminate.
  • the second power supply 222 continues to apply a background power 780 to sustain the plasma after the high- power pulse 778 terminates.
  • the second power supply 222 can be designed so as to generate a continuous nominal power that generates and ' sustains the initial plasma until a high-power pulse is delivered by the second power supply 222.
  • the high-power pulse has a leading edge with a rise time that is in the range of about 0.1 microseconds to ten seconds.
  • the first power supply 206 applies another ramping power pulse 782 across an additional volume of initial plasma in the region 214.
  • the ramping power pulse 782 increases the current density in the additional volume of initial plasma to generate a high-density plasma.
  • the second power supply 222 applies
  • the 6 another high-power pulse 784 to the high-density plasma that is located proximate to the inner cathode section 702a.
  • the high-power pulse generates a higher density plasma proximate to the inner cathode section 702a.
  • the high-power pulse 784 and the ramping power pulse 782 terminate.
  • the repetition rate between the ramping power pulses 776, 782 is between about 0.1 Hz and 1 kHz.
  • FIG. 1 5 illustrates a graphical representation 790 of power as a function of time for each of a first 206, a second 222, and a third power supply 704 for one mode of operating the plasma generating system 700 of FIG. 9.
  • the second power supply 222 is a RF power supply.
  • a RF power supply can be used in plasma sputtering systems for sputtering magnetic materials or dielectric materials, for example.
  • the first power supply 206 is operated in a constant power mode. Due to the nature of a RF power supply, the second power supply 222 is operated in a substantially constant power mode.
  • the plasma generating apparatus 700 can operate as follows.
  • the third power supply 704 applies a constant power 752 in the range of about 0.1 kW to 1 OkW across the feed gas 234 to generate an initial plasma.
  • the power level required to generate the initial plasma depends on several factors including the dimensions of the region 214, for example.
  • the constant power 752 is applied between the ionizing electrode 708 and the outer cathode section 702b.
  • the initial plasma diffuses towards the inner cathode section 702a due to a pressure differential as described herein. The pressure differential forces the initial plasma from the region 214 towards the inner cathode section 702a.
  • the second power supply 222 applies an RF driving voltage corresponding to a power 792 in the range of about O.l kW to l OkW across the initial plasma to sustain the initial plasma proximate to the inner cathode section 702a.
  • the RF power supply generates a series of very short sinusoidal voltage pulses having a time period between time t and time t that is in the range of about 0.1 msec to I sec and that depends on several parameters, such as the dimensions of the inner cathode section 702a.
  • a sufficient volume of the initial plasma is located proximate to the inner cathode section 702a and an additional volume of initial plasma is generated in the region 214.
  • the first power supply 206 then applies a high-power pulse 756 across the additional volume of initial plasma in the region 214 to generate a high- density plasma in the region 214.
  • the ion density of the high-density plasma is greater than the ion density of the initial plasma.
  • the high-power pulse 756 has a power level that is in the range of about 1 OkW to 1 ,000kW.
  • the time period between time t and time t is in the range of about 0.1 msec to 1 sec.
  • the high-density plasma that is generated in the region 214 diffuses toward the inner cathode section 702a due to the pressure differential.
  • the second power supply 222 applies a high-power RF pulse 794 to the high-density plasma.
  • the high-power RF pulse super-ionizes the high-density plasma, thereby generating a higher-density plasma.
  • the frequency of the high-power pulse 794 is 1 3.56MHz. In other embodiments, the frequency of the high power RF pulse 794 is in the range of about 40kHz to 100MHz.
  • the time period between time t and time t is in the range of about 0.001 msec to 1 msec.
  • the total time period of the high-power pulse 794 between time t and time t is in the range of about 0.01 microsec to 1 Osec.
  • the first power supply 206 continues to apply the high-power pulse 756 in order to maintain the high-density plasma.
  • the high-power pulse 756 terminates.
  • the second power supply 222 continues to apply a background RF driving voltage corresponding to a power 796 after the high-power pulse 794 terminates at time t .
  • the background RF power 796 continues to maintain the high-density plasma.
  • the time period between time t and time t is in the range of about 0.001 msec to 1 msec.
  • the first power supply 206 applies another high-power pulse 762
  • the high-power pulse 762 generates a new volume of high-density plasma.
  • the new volume of high-density plasma diffuses towards the inner cathode section 702a.
  • the second power supply 222 applies RF driving voltage corresponding to another high-power pulse 798 to the new volume of high-density plasma that is located proximate to the inner cathode section 702a.
  • the high-power pulse 798 terminates.
  • the power 752 from the third power supply 704 is continuously applied for a time that is in the range of about one microsecond to one hundred seconds in order to allow the initial plasma to form and to be maintained at a sufficient plasma density.
  • the RF power from the second power supply 222 is continuously applied after the initial plasma is ignited in order to maintain the initial plasma.
  • the high-power pulse 756 has a power and a pulse width that is sufficient to transform the initial plasma to a strongly-ionized high-density plasma.
  • the high- power pulse 756 is applied for a time that is in the range of about ten microseconds to ten seconds.
  • the repetition rate of the high-power pulses 756, 762 is in the range of about 0.1 Hz to 1 kHz.
  • FIG. 16A through FIG. 16C are flowcharts 800, 800', and 800" of illustrative processes of generating high-density plasmas according to the present invention.
  • the feed gas 234 (FIG. 2) flows into the region 214 (step 802).
  • the feed gas 234 flows through the region 214 towards the inner cathode section 202a.
  • the first power supply 206 generates a voltage across the feed gas 234 in the region 214 (step 804).
  • the voltage generates an electric field that is large enough to ignite the feed gas 234 and generate the initial plasma.
  • additional feed gas flows into the region 214 forcing the initial plasma to diffuse proximate to the inner cathode section 202a (step 806).
  • the second power supply 222 After a suitable volume of the initial plasma is present in the region 252, the second power supply 222 generates a large electric field across the initial plasma that super-ionizes the initial plasma, thereby generating a high-density plasma in the region 252 (step 808).
  • the high-density plasma is typically more strongly ionized than the initial plasma.
  • the feed gas 234 flows through the region 214 towards the inner cathode section 202a.
  • the first power supply 206 generates a voltage across the feed gas 234 in the region 214 (step 804). The voltage is large enough to ignite the feed gas 234 and to generate the initial plasma. While the initial plasma is being generated, additional feed gas 234 flows into the region 214 forcing the initial plasma to diffuse proximate to the inner cathode section 202a (step 806).
  • the first power supply 206 generates a strong electric field across the initial plasma, thereby super-ionizing the initial plasma and creating a high-density plasma in the region 214 (step 810).
  • an additional power supply (not shown) generates. the strong electric field instead of the first power supply 206.
  • jh e high-density plasma diffuses towards the inner cathode section 202a where it commingles with the initial plasma in the region 252 (step 812).
  • the second power supply 222 When a suitable volume of the combined plasma is present in the region 252, the second power supply 222 generates a strong electric field across the plasma in the region 252 that generates a high-density plasma (step 814).
  • the high-density plasma will typically be more strongly-ionized than the plasma formed from the combination of the initial plasma and the high-density plasma from the region 214.
  • the feed gas 234 flows through the region 214 towards the inner cathode section 202a.
  • the first power supply 206 generates a voltage across the feed gas 234 in the region 214 (step 81 8). The voltage generates an electric field that is large enough to ignite the feed gas 234 and generate the initial plasma. In this embodiment, additional feed gas 234 is not supplied to the region 214 and therefore, the initial plasma remains in the region 214.
  • the first power supply 206 generates a strong electric field across the initial plasma, thereby super-ionizing the initial plasma and creating a high-density plasma in the region 214 (step 820).
  • an additional power supply (not shown) generates the strong electric field instead of the first power supply 206.
  • the second power supply 222 When a suitable volume of high-density plasma is present in the region 252, the second power supply 222 generates a strong electric field across the high-density plasma in the region 252 to generate a higher-density plasma (step 824).
  • the higher- density plasma will typically be more strongly-ionized than the high-density plasma from the region 214.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
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  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne une source de plasma. La source de plasma comprend un système cathodique. Une anode est adjacente au système cathodique. Une source d'atomes excités produit un plasma initial et des atomes excités à partir d'un volume de gaz d'alimentation. Le plasma initial et les atomes excités se trouvent à proximité du système cathodique. Une alimentation électrique produit un champ électrique entre le système cathodique et l'anode. Le champ électrique produit la super-ionisation du plasma initial de façon à produire un plasma à densité élevée.
PCT/US2004/010968 2003-04-22 2004-04-08 Source de plasma a densite elevee employant des atomes excites WO2004095498A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/249,595 2003-04-22
US10/249,595 US6806651B1 (en) 2003-04-22 2003-04-22 High-density plasma source
US10/249,844 2003-05-12
US10/249,844 US6806652B1 (en) 2003-04-22 2003-05-12 High-density plasma source using excited atoms

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WO2004095498A2 true WO2004095498A2 (fr) 2004-11-04
WO2004095498A3 WO2004095498A3 (fr) 2005-03-17

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EP3340274A1 (fr) * 2016-12-24 2018-06-27 WINDLIPIE spólka z ograniczona odpowiedzialnoscia spólka komandytowa Dispositif de pulvérisation magnétron

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DE2857102A1 (de) * 1978-07-08 1980-06-12 Wolfgang Kieferle Vorrichtung zum auflagern einer metall- oder legierungsschicht auf ein elektrisch leitendes werkstueck
EP0064288A1 (fr) * 1981-05-04 1982-11-10 Optical Coating Laboratory, Inc. Procédé et appareil pour la production et l'utilisation de jets moléculaires activés
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US20020108847A1 (en) * 2000-11-30 2002-08-15 Cuomo Jerome J. Non-thermionic sputter material transport device, methods of use, and materials produced thereby

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2857102A1 (de) * 1978-07-08 1980-06-12 Wolfgang Kieferle Vorrichtung zum auflagern einer metall- oder legierungsschicht auf ein elektrisch leitendes werkstueck
EP0064288A1 (fr) * 1981-05-04 1982-11-10 Optical Coating Laboratory, Inc. Procédé et appareil pour la production et l'utilisation de jets moléculaires activés
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US20020108847A1 (en) * 2000-11-30 2002-08-15 Cuomo Jerome J. Non-thermionic sputter material transport device, methods of use, and materials produced thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3340274A1 (fr) * 2016-12-24 2018-06-27 WINDLIPIE spólka z ograniczona odpowiedzialnoscia spólka komandytowa Dispositif de pulvérisation magnétron

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