WO2004088710A3 - Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof - Google Patents

Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof Download PDF

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Publication number
WO2004088710A3
WO2004088710A3 PCT/DK2004/000240 DK2004000240W WO2004088710A3 WO 2004088710 A3 WO2004088710 A3 WO 2004088710A3 DK 2004000240 W DK2004000240 W DK 2004000240W WO 2004088710 A3 WO2004088710 A3 WO 2004088710A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
gas
gas plasma
extent
controlling
Prior art date
Application number
PCT/DK2004/000240
Other languages
French (fr)
Other versions
WO2004088710A2 (en
Inventor
Soeren Flygenring Christensen
Bent Overby
Rene Carlsen
Steen Guldager Petersen
Christianus Wilhelmu Berendsen
Original Assignee
Nkt Res & Innovation As
Soeren Flygenring Christensen
Bent Overby
Rene Carlsen
Steen Guldager Petersen
Christianus Wilhelmu Berendsen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nkt Res & Innovation As, Soeren Flygenring Christensen, Bent Overby, Rene Carlsen, Steen Guldager Petersen, Christianus Wilhelmu Berendsen filed Critical Nkt Res & Innovation As
Publication of WO2004088710A2 publication Critical patent/WO2004088710A2/en
Publication of WO2004088710A3 publication Critical patent/WO2004088710A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

A method of controlling the extent of gas plasma, the method comprising: (A) providing a gas zone (110), said gas zone comprising a gas having a pressure; said gas comprising at least one gas component allowing generation of a plasma; (B) generating a plasma in said gas zone by supplying a potential difference between at least two electrodes (150); said at least two electrodes being configured to wholly or partly encompass said gas zone; and (C) controlling the extent of said generated plasma by controlling at least one of: said gas, said pressure, said potential difference, and said configuration of said at least two electrodes; a plasma treatment apparatus comprising at least one plasma measuring means (160) for measuring the extent of the plasma, and at least one controlling means (180, 191, 131) for controlling the extent of the plasma; and use of the method and apparatus in plasma treatment and/or plasma-assisted surface modification of electrodes and/or substrates.
PCT/DK2004/000240 2003-04-02 2004-04-02 Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof WO2004088710A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA200300504 2003-04-02
DKPA200300504 2003-04-02

Publications (2)

Publication Number Publication Date
WO2004088710A2 WO2004088710A2 (en) 2004-10-14
WO2004088710A3 true WO2004088710A3 (en) 2005-12-08

Family

ID=33104012

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DK2004/000240 WO2004088710A2 (en) 2003-04-02 2004-04-02 Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof

Country Status (1)

Country Link
WO (1) WO2004088710A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9712338D0 (en) 1997-06-14 1997-08-13 Secr Defence Surface coatings
GB0406049D0 (en) * 2004-03-18 2004-04-21 Secr Defence Surface coatings
US8852693B2 (en) 2011-05-19 2014-10-07 Liquipel Ip Llc Coated electronic devices and associated methods

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0566220A2 (en) * 1986-12-19 1993-10-20 Applied Materials, Inc. Magnetic field enhanced plasma etch reactor
EP0644273A1 (en) * 1993-09-16 1995-03-22 Applied Materials, Inc. Magnetron plasma sputter deposition apparatus and method of sputter coating onto a substrate
US5415718A (en) * 1990-09-21 1995-05-16 Tadahiro Ohmi Reactive ion etching device
US5494522A (en) * 1993-03-17 1996-02-27 Tokyo Electron Limited Plasma process system and method
US5527394A (en) * 1991-06-08 1996-06-18 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Apparatus for plasma enhanced processing of substrates
US5997686A (en) * 1992-07-27 1999-12-07 Tokyo Electron Limited Process for setting a working rate distribution in an etching or plasma CVD apparatus
US6162323A (en) * 1997-08-12 2000-12-19 Tokyo Electron Yamanashi Limited Plasma processing apparatus
EP1164206A2 (en) * 2000-06-12 2001-12-19 Agilent Technologies, Inc. (a Delaware corporation) Chemical vapor deposition method for amorphous silicon and resulting film
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US20030047140A1 (en) * 2000-03-27 2003-03-13 Bailey Andrew D. Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0566220A2 (en) * 1986-12-19 1993-10-20 Applied Materials, Inc. Magnetic field enhanced plasma etch reactor
US5415718A (en) * 1990-09-21 1995-05-16 Tadahiro Ohmi Reactive ion etching device
US5527394A (en) * 1991-06-08 1996-06-18 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Apparatus for plasma enhanced processing of substrates
US5997686A (en) * 1992-07-27 1999-12-07 Tokyo Electron Limited Process for setting a working rate distribution in an etching or plasma CVD apparatus
US5494522A (en) * 1993-03-17 1996-02-27 Tokyo Electron Limited Plasma process system and method
EP0644273A1 (en) * 1993-09-16 1995-03-22 Applied Materials, Inc. Magnetron plasma sputter deposition apparatus and method of sputter coating onto a substrate
US6162323A (en) * 1997-08-12 2000-12-19 Tokyo Electron Yamanashi Limited Plasma processing apparatus
US20030047140A1 (en) * 2000-03-27 2003-03-13 Bailey Andrew D. Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
EP1164206A2 (en) * 2000-06-12 2001-12-19 Agilent Technologies, Inc. (a Delaware corporation) Chemical vapor deposition method for amorphous silicon and resulting film
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber

Also Published As

Publication number Publication date
WO2004088710A2 (en) 2004-10-14

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