WO2004084259A2 - Diode electroluminescente organique au decouplage de lumiere ameliore - Google Patents

Diode electroluminescente organique au decouplage de lumiere ameliore Download PDF

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Publication number
WO2004084259A2
WO2004084259A2 PCT/EP2004/002128 EP2004002128W WO2004084259A2 WO 2004084259 A2 WO2004084259 A2 WO 2004084259A2 EP 2004002128 W EP2004002128 W EP 2004002128W WO 2004084259 A2 WO2004084259 A2 WO 2004084259A2
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WO
WIPO (PCT)
Prior art keywords
light
layer
emitting diode
substrate
organic light
Prior art date
Application number
PCT/EP2004/002128
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German (de)
English (en)
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WO2004084259A3 (fr
Inventor
Arvid Hunze
Lothar Rau
Wolfgang Rogler
Marcus Scheffel
Sven VÖGELE
Original Assignee
Osram Opto Semiconductors
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Publication date
Application filed by Osram Opto Semiconductors filed Critical Osram Opto Semiconductors
Publication of WO2004084259A2 publication Critical patent/WO2004084259A2/fr
Publication of WO2004084259A3 publication Critical patent/WO2004084259A3/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light

Definitions

  • the invention relates to an organic light-emitting diode (OLED) in which the extraction efficiency, that is to say the probability with which a photon generated can be coupled out of the diode and thus contribute to the brightness, is improved.
  • OLED organic light-emitting diode
  • OLEDs with improved efficiency are known, for example, from the publication by G. Gu, et. al .: High-external - quantum-efficiency organic light-emitting devices in "Optics Letters", vol. 22, no. 6, p. 396, from 1997.
  • the method described therein for increasing efficiency is based on so-called mesa structures. These include structures made from truncated pyramids or truncated cones, which serve as reflectors for laterally emitted emissions. The illuminated area is located on the flat upper side of the stump. Disadvantages of this method are: The structures used are introduced directly into the substrate. When using glass substrates, this can only be achieved with great effort or the use of highly toxic substances (hydrofluoric acid).
  • the mesa structures enclose one pixel each.
  • the structure depth must be at least a few 10 ⁇ m. Such structures cannot be produced photolithographically or only with great effort.
  • the active illuminated area covers only a small part of the available area.
  • US 5,834,893 discloses mesa structures on inverted OLEDs.
  • the structures described here for improving the coupling-out efficiency are based on an inverted OLED structure, ie the transparent anode is deposited as the last layer.
  • the OLEDs are in Substrate depressions that serve as reflectors, analogous to the structure described above.
  • a polymer LED was applied to a one-dimensional periodic structure with a period of 388 nm and depths of 10 - 100 nm.
  • the structure acts as a Bragg reflector and in turn leads to a scattering of optical modes in the emitter material. Disadvantages with this procedure are: -
  • the periodicity of the structure leads to a strong angular dispersion. For display elements, however, a color impression that is independent of the viewing angle is required.
  • the object of the invention is to provide an OLED with a conventional, that is to say non-inverted structure, which shows a significantly increased extraction efficiency.
  • the subject matter of the invention is an OLED, a substrate, on which a first positive and transparent electrode (anode), subsequently comprising at least one emitting layer of predominantly organic material and in turn subsequently a negative reflecting electrode (cathode), between the lower first electrode and the substrate and / or at least one light decoupling structure layer is integrated into the substrate.
  • the extraction efficiency is increased by introducing at least one light coupling structure layer, between the substrate and the first electrode and / or integrated into the substrate.
  • OLEDs can also be combined with color filter structures to generate certain colors or full colors. These are generally introduced between the substrate and the first positive electrode (ITO anode) and, for example, covered with an organic planarization material before the ITO electrode is applied.
  • the light decoupling structure layer can be combined particularly well with such a color filter structure and / or integrated directly into a color filter.
  • the structure resolution of the light decoupling structure layer is less than / equal to one pixel, preferably less than one pixel and particularly preferably in the range from 1-50 ⁇ m.
  • the individual structures of the light decoupling structure layer can be worked into the substrate or structured on it (eg photolithographically).
  • one or more structured layer (s) of a photoresist is applied to a substrate, on which the transparent electrode, the organic layer (s) and the second electrode are then applied.
  • the entire structure is then repeated if necessary, i.e. if there are no planning layer is introduced, the structuring of the photoresist layer.
  • the structures of the light decoupling structure layer are not periodic.
  • the outcoupling efficiency can be optimized by a further layer between the substrate and the structure.
  • the refractive index of this layer should be smaller than that of the two adjacent layers. This leads to a greater probability of total reflection at the interface between the light decoupling structure layer and the low index layer. Light reflected in this way can in turn be reflected on the oblique cathode surface and thus coupled out.
  • the light decoupling structure layer can also be planarized.
  • Materials suitable for planarization are known from microelectronics and can either be predominantly organic or inorganic material. They can be applied by means of processes known from microelectronics, such as spin coating, knife coating and / or vapor deposition. Large-area structured application by means of a suitable printing process is also possible.
  • the refractive index of the planarization differs from that of the light decoupling structure layer.
  • an additional layer with a higher or lower refractive index or a semi-transparent metal layer can be inserted between the two. Planarization with a high refractive index is advantageous in order to achieve the most efficient possible coupling of the light from the OLED material into the planarization layer.
  • Light decoupling structure layer can be connected to one another or executed individually.
  • the structures can be periodic or non-periodic.
  • the structures can be, for example, conical, drop-shaped, pyramidal or polygonal.
  • Glass, plastic, plastic / ceramic and plastic / glass composites come into consideration as substrate materials.
  • Particularly suitable substrates are plastic films, in particular flexible films, since the structures according to the invention can be generated particularly easily by simple molding processes such as embossing in film production.
  • FIG. 1 shows an embodiment in which the substrate 1, for example a glass substrate, has a light coupling structure layer 2, which was produced by means of a suitable and known, for example photolithographic process and is provided with periodic or non-periodic (statistically distributed) structures.
  • a suitable and known, for example photolithographic process and is provided with periodic or non-periodic (statistically distributed) structures.
  • an OLED is built up, which reproduces the structures in all layers.
  • the light coupling structure layer is followed by the first electrode, the transparent anode 3, for example made of ITO (indium tin oxide).
  • the anode is followed at least by an organic active layer 4 on which the cathode 5, for example the last deposited and / or metallic one, then comes to rest, which in turn has a structured, non-planar shape.
  • the layer structure is for example the following: 80nm PEDOT
  • FIG. 6 shows a significantly increased efficiency (+ 41% at 10 mA / cm 2 ) (line with the filled boxes "structured device") in comparison to the reference diodes processed on the same substrate (shown by the line with the empty box “reference”).
  • FIG. 7 shows a microscopic picture of structured OLED during operation.
  • the structured areas can be recognized by the brightness (generally increased luminance) and in particular the even brighter edges are striking.
  • the arrows 7 in FIG. 1 show an exemplary beam path of an emitted photon.
  • the non-planarity of the upper electrode or cathode 5 can serve to reflect photons emitted laterally from the OLED. These are deflected in the forward direction and at least partially decoupled. Overall, reflector-like structures of the light decoupling structure layer 2 lead to the decoupling of otherwise wave-guided photons.
  • Coupling structures that consist of a material with a high refractive index are advantageous. It should be larger than that of the functional organic materials arranged above it, that is to say preferably greater than 1.6 and particularly preferably greater than 1.8 and particularly preferably greater than 2.0, in order to make the coupling of light from the active organic layers as efficient as possible.
  • FIG. 2 shows a structure similar to that of FIG. 1, with the difference that a low index layer 6 is arranged between the substrate 1 and the light decoupling structure layer 2, by means of which the decoupling efficiency between substrate and structure is further optimized.
  • the refractive index of this layer 6 is preferably smaller than that of the two adjacent layers substrate 1 on the one hand and light coupling structure layer 2 on the other. This leads to a greater probability of total reflection at the interface between the decoupling structure 2 and the low-index layer 6. In this way, light reflected in turn can be reflected on the oblique cathode surface 5 and thus coupled out.
  • FIG. 3 shows an exemplary embodiment in which the light decoupling structure layer 2 is embedded in a further layer 8.
  • This planarization can take place with various materials, which are preferably known from microelectronics and are organic and / or inorganic in origin. Examples of suitable planarization materials are poly-epoxides, novolac resins, phenolic resins, polyimides or polyacrylates.
  • the planarization is preferably carried out with a high index layer, that is to say particularly advantageously with a material of the substance classes described above, the refractive index of which is greater than or equal to 1.6.
  • FIG. 3 shows a light decoupling structure layer 2 which essentially comprises individual truncated cones 2.
  • a light decoupling structure layer 2 can be produced by means of a suitable photolithographic process, so that only free-standing islands of the originally applied layer 2 are retained after the development.
  • FIG. 4 essentially shows the structure known from FIG. 3 with the low index layer 6 known from FIG. 2.
  • the coupling-out efficiency is optimized by a low-index layer 6 between substrate and structure and / or high-index layer or planarization layer 8 analogously to FIG. 2.
  • FIG. 5 shows how the processing sequence of low-index layer 6 and light decoupling structure layer 2 can be interchanged.
  • the low index layer 6 lies between the substrate 1 and the high index layer 8 but above the light coupling structure layer 2.
  • the exemplary embodiments can, for example, also be combined with one another in such a way that the decoupling structures are only partially planarized.
  • FIGS. 6 and 7 show how the efficiency of these OLEDs is increased and that the emission mainly occurs at the edges of the structures.
  • Quantum mechanical calculations show that from a conventional OLED component approx. 50% to 80% of the photons are lost through emission suppression and total reflection without additional measures for light extraction (MH Lu and JC Sturm, Optimization of external coupling and light emission in organic light-emitting devides: modeling and experiment, J. Appl Phys., 91 (2), p. 595, 2002).
  • the decoupling can be increased by at least a factor of 1.4 with the invention.
  • the resulting increased component efficiency means lower operating voltage and thus a longer service life.
  • the invention relates to an organic light-emitting diode (OLED) in which the extraction efficiency, that is to say the probability with which a photon generated can be coupled out of the diode and thus detected, is improved. This will achieved by introducing a light extraction structure layer between the substrate and the anode.
  • OLED organic light-emitting diode

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  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne une diode électroluminescente organique (OLED) dont l'efficacité d'extraction et la probabilité avec laquelle un photon généré est découplé de la diode et donc peut être détecté, sont améliorées. Cela est obtenu par l'introduction d'une couche structurelle de découplage de lumière entre le substrat et l'anode.
PCT/EP2004/002128 2003-03-19 2004-03-03 Diode electroluminescente organique au decouplage de lumiere ameliore WO2004084259A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10312219A DE10312219A1 (de) 2003-03-19 2003-03-19 Organische Leuchtdiode mit verbesserter Lichtauskopplung
DE10312219.2 2003-03-19

Publications (2)

Publication Number Publication Date
WO2004084259A2 true WO2004084259A2 (fr) 2004-09-30
WO2004084259A3 WO2004084259A3 (fr) 2004-11-04

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7922358B2 (en) 2007-09-28 2011-04-12 Osram Opto Semiconductors Gmbh Illumination device, luminaire and display device
US8179034B2 (en) 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
US8653548B2 (en) 2007-12-12 2014-02-18 Osram Opto Semiconductors Gmbh Light-emitting device
WO2015164191A1 (fr) * 2014-04-24 2015-10-29 Ppg Industries Ohio, Inc. Diode électroluminescente organique présentant une couche de modification de surface

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4410123B2 (ja) 2005-02-10 2010-02-03 株式会社東芝 有機ｅｌディスプレイ
DE102014006293A1 (de) * 2014-04-26 2015-10-29 Audi Ag Schutzvorrichtung, Fahrzeug und Verfahren zum Überwachen eines Fahrzeugsitzes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780174A (en) * 1995-10-27 1998-07-14 Kabushiki Kaisha Toyota Chuo Kenkyusho Micro-optical resonator type organic electroluminescent device
US5834893A (en) * 1996-12-23 1998-11-10 The Trustees Of Princeton University High efficiency organic light emitting devices with light directing structures
EP1100129A2 (fr) * 1999-11-10 2001-05-16 Matsushita Electric Works, Ltd. Substrat pour dispositif émetteur de lumière, dispositif émetteur de lumière et méthode de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001247342A1 (en) * 2000-11-02 2002-05-15 3M Innovative Properties Company Brightness enhancement of emissive displays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780174A (en) * 1995-10-27 1998-07-14 Kabushiki Kaisha Toyota Chuo Kenkyusho Micro-optical resonator type organic electroluminescent device
US5834893A (en) * 1996-12-23 1998-11-10 The Trustees Of Princeton University High efficiency organic light emitting devices with light directing structures
EP1100129A2 (fr) * 1999-11-10 2001-05-16 Matsushita Electric Works, Ltd. Substrat pour dispositif émetteur de lumière, dispositif émetteur de lumière et méthode de fabrication

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8179034B2 (en) 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
US7922358B2 (en) 2007-09-28 2011-04-12 Osram Opto Semiconductors Gmbh Illumination device, luminaire and display device
US8653548B2 (en) 2007-12-12 2014-02-18 Osram Opto Semiconductors Gmbh Light-emitting device
WO2015164191A1 (fr) * 2014-04-24 2015-10-29 Ppg Industries Ohio, Inc. Diode électroluminescente organique présentant une couche de modification de surface
US9761841B2 (en) 2014-04-24 2017-09-12 Vitro, S.A.B. De C.V. Organic light emitting diode with surface modification layer

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DE10312219A1 (de) 2004-10-07
WO2004084259A3 (fr) 2004-11-04

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