WO2004075251A3 - Tmos-infrared uncooled sensor and focal plane array - Google Patents

Tmos-infrared uncooled sensor and focal plane array Download PDF

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Publication number
WO2004075251A3
WO2004075251A3 PCT/IL2004/000142 IL2004000142W WO2004075251A3 WO 2004075251 A3 WO2004075251 A3 WO 2004075251A3 IL 2004000142 W IL2004000142 W IL 2004000142W WO 2004075251 A3 WO2004075251 A3 WO 2004075251A3
Authority
WO
WIPO (PCT)
Prior art keywords
sensor
tmos
focal plane
plane array
array
Prior art date
Application number
PCT/IL2004/000142
Other languages
French (fr)
Other versions
WO2004075251A2 (en
Inventor
Eran Socher
Ofir Bochobza-Degani
Yael Nemirovsky
Original Assignee
Technion Res & Dev Foundation
Eran Socher
Ofir Bochobza-Degani
Yael Nemirovsky
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technion Res & Dev Foundation, Eran Socher, Ofir Bochobza-Degani, Yael Nemirovsky filed Critical Technion Res & Dev Foundation
Priority to US10/545,892 priority Critical patent/US7489024B2/en
Publication of WO2004075251A2 publication Critical patent/WO2004075251A2/en
Publication of WO2004075251A3 publication Critical patent/WO2004075251A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

An array of uncooled infrared sensors based on a micro-machined temperature sensitive MOS transistor. The sensor array is fabricated using a commercial CMOS process on SOI wafers, followed by backside silicon dry etching for each sensor pixel. Active sensor pixels may include either, an integrator and buffer, or simply the sensing transistor, serving also as the selection device. The transistor bias controls the selected device and the sensitivity of the sensor. PMOS transistors and switched operation are used for noise minimization.
PCT/IL2004/000142 2003-02-20 2004-02-15 Tmos-infrared uncooled sensor and focal plane array WO2004075251A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/545,892 US7489024B2 (en) 2003-02-20 2004-02-15 TMOS-infrared uncooled sensor and focal plane array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44810303P 2003-02-20 2003-02-20
US60/448,103 2003-02-20

Publications (2)

Publication Number Publication Date
WO2004075251A2 WO2004075251A2 (en) 2004-09-02
WO2004075251A3 true WO2004075251A3 (en) 2005-12-01

Family

ID=32908535

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2004/000142 WO2004075251A2 (en) 2003-02-20 2004-02-15 Tmos-infrared uncooled sensor and focal plane array

Country Status (1)

Country Link
WO (1) WO2004075251A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8552380B1 (en) * 2012-05-08 2013-10-08 Cambridge Cmos Sensors Limited IR detector
CN103263255B (en) * 2013-05-25 2014-09-24 慈溪迈思特电子科技有限公司 Method for processing data of human body infrared temperature sensor
US9528881B1 (en) * 2016-05-18 2016-12-27 Nxp Usa, Inc. Stress isolated detector element and microbolometer detector incorporating same
CN116086621B (en) * 2023-03-31 2023-07-25 杭州海康微影传感科技有限公司 Infrared reading circuit and control method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465786B1 (en) * 1999-09-01 2002-10-15 Micron Technology, Inc. Deep infrared photodiode for a CMOS imager
US6483111B1 (en) * 1998-09-14 2002-11-19 Mitsubishi Denki Kabushiki Kaisha Thermal infrared-detector array and method of fabrication thereof
US20040200962A1 (en) * 2003-04-11 2004-10-14 Mitsubishi Denki Kabushiki Kaisha Thermal type infrared detector and infrared focal plane array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483111B1 (en) * 1998-09-14 2002-11-19 Mitsubishi Denki Kabushiki Kaisha Thermal infrared-detector array and method of fabrication thereof
US6465786B1 (en) * 1999-09-01 2002-10-15 Micron Technology, Inc. Deep infrared photodiode for a CMOS imager
US20040200962A1 (en) * 2003-04-11 2004-10-14 Mitsubishi Denki Kabushiki Kaisha Thermal type infrared detector and infrared focal plane array

Also Published As

Publication number Publication date
WO2004075251A2 (en) 2004-09-02

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