WO2004069767A1 - Ferromagnetic material - Google Patents

Ferromagnetic material Download PDF

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Publication number
WO2004069767A1
WO2004069767A1 PCT/SE2004/000150 SE2004000150W WO2004069767A1 WO 2004069767 A1 WO2004069767 A1 WO 2004069767A1 SE 2004000150 W SE2004000150 W SE 2004000150W WO 2004069767 A1 WO2004069767 A1 WO 2004069767A1
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WO
WIPO (PCT)
Prior art keywords
recited
ferromagnetic
producing
zno
doped
Prior art date
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Ceased
Application number
PCT/SE2004/000150
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English (en)
French (fr)
Inventor
Parmanand Sharma
Kudumboor Venkat Rao
Börje Johansson
Rajeev Ahuja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NM Spintronics AB
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NM Spintronics AB
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Priority to HK06113756.1A priority Critical patent/HK1093056B/xx
Priority to JP2006502792A priority patent/JP2006517175A/ja
Priority to US10/544,655 priority patent/US7527983B2/en
Priority to DE602004013735T priority patent/DE602004013735D1/de
Priority to EP04708955A priority patent/EP1601629B1/en
Publication of WO2004069767A1 publication Critical patent/WO2004069767A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
    • H01F41/205—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation by laser ablation, e.g. pulsed laser deposition [PLD]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/402—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of II-VI type, e.g. Zn1-x Crx Se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/0206—Manufacturing of magnetic cores by mechanical means
    • H01F41/0246—Manufacturing of magnetic circuits by moulding or by pressing powder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C04B2235/3267—MnO2
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646—Optical properties
    • C04B2235/9653—Translucent or transparent ceramics other than alumina
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

Definitions

  • the present invention relates to materials used for electronic components which use ferromagnetism in its function.
  • Components based on materials with ferromagnetic properties are devised to affect or rectify the spin orientation of bosons and fermions, e.g. electrons.
  • the search for materials with ferromagnetism above room temperatures in dilute magnetic semiconductors has been a quest in recent years, especially to develop a potentially rich new class of future devices which exploit the electron spin state i.e. spintronics.
  • the types of components for these devices include magnetic memories, e.g. hard discs, semiconductor magnetic memories, e.g. MRAM, spin valve transistors, spin light emitting diodes, non- volatile memory, logic devices, quantum computers, optical isolators, sensors, ultra-fast optical switches etc.
  • Dilute magnetic semiconductors can also be used in electronic-, and magnetic -based products.
  • Spintronic devices such as spin valve transistors, spin light emitting diodes, non- volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of high interest for introducing the ferromagnetic properties at room temperature in a semiconductor described in the two documents of reference 6 and 7.
  • the present invention is based on the concept to create ferromagnetism into doped dilute magnetic semiconductors by doping Zinc Oxide (ZnO) with Manganese (Mn). Tailoring of ferromagnetism above room temperature in bulk Mn ( ⁇ 4 atomic %) doped ZnO has been achieved. In this state Mn is found to carry a moment 0.16 ⁇ B . Ferromagnetic Resonance (FMR) data on these samples have confirmed the surprising results of the existence of ferromagnetic order at temperatures even as high as 425K. In the paramagnetic state the Paramagnetic Resonance data show that Mn is in the 2+ state (Mn 2+ ) with a g value 2.0029. Ab initio calculations confirm the above findings.
  • Zinc Oxide Zinc Oxide
  • Mn Manganese
  • the ferromagnetism around room temperatures is completely suppressed giving rise to the often reported pronounced 'ferromagnetic-like' ordered state below 40K.
  • the material also shows room temperature ferromagnetic ordering in 2-3 ⁇ m thick transparent films deposited on fused quartz substrates at temperatures below 600 °C by Pulsed Laser deposition using the same bulk materials as targets.
  • the ferromagnetic dilute Mn doped ZnO can also be obtained as transparent nanoparticles.
  • Manganese doped Zinc oxide with ferromagnetic properties in the specified temperature range can also be manufactured with a sputtering system where either two metallic (Zinc and Manganese) targets are used simultaneously or one sintered ZnO:Mn ceramic target.
  • the present invention is defined by the appended claims.
  • Fig. 1 shows a room temperature hysteresis loops showing ferromagnetic ordering in nominal 2% Mn doped ZnO pellets sintered at various temperatures according to an embodiment of the invention
  • Fig. 2 shows a M(H) hysteretic loop data at 300K for Zn0.978Mn0.022O PLD deposited thin film on fused quartz, after subtracting the diamagnetic contribution (shown as an insert) arising from the fused quartz substrate in the 'as obtained' data from SQUID measurements;
  • Fig. 3 shows a) the Ferromagnetic resonance spectra for nominal 2 at% Mn doped ZnO pellet sintered at 500°C, and (b) the paramagnetic resonance spectra for the same sample sintered at 900 °C;
  • Fig. 4 shows the calculated density of states (DOS) for Zn0.958Mn0.042O, Fermi level is set at zero, where inset shows the DOS near to the Fermi level, and the states just below the Fermi level arising from the Mn 3d states. Below to Mn-3d states, the states between 4 to 6 eV are from 0-2p states and states between 6 to 8 eV are arising from Zn-3d states.
  • the present invention is based on the concept to create ferromagnetism in doped dilute magnetic semiconductors by doping Zinc Oxide (ZnO) with Manganese (Mn) in bulk or film materials.
  • ZnO Zinc Oxide
  • Mn Manganese
  • Our experiments shows successful tailoring of ferromagnetism above room temperature in bulk Mn doped ZnO.
  • the Mn doping level should then be less than 4-5 at% (atomic percent) for bulk materials.
  • Theoretically we find that the upper limit for ferromagnetism is about 5 at% Mn.
  • due to materials problems, above 4 at% Mn there is a clear tendency for the Mn atoms to form clusters which are then antiferromagnetic and that suppresses the ferromagnetic order.
  • Room temperature ferromagnetic ordering has also been obtained in 2-3 ⁇ m thick films deposited on fused quartz substrates at temperatures below 600 °C, by Pulsed Laser deposition using the same bulk materials as targets.
  • the doping concentration in these film materials should be less than 3-4at% in order to obtain controlled homogeneity.
  • samples below 2 at% can be tailored to be homogeneous in composition with slight variations but containing no clusters.
  • the substrate temperature effects the Mn concentration in the film. Films deposited at higher temperatures are found to have a high concentration of Mn in comparison to films deposited at low temperatures. This means that the temperature could be used to control the Mn concentration.
  • the doped dilute semiconductor can also be processed, by particle size selection, into transparent and ferromagnetic nanoparticles.
  • Manganese doped Zincoxide can be manufactured with a sputtering system where either two metallic (Zinc and Manganese) targets are used simultaneously or one sintered ZnO:Mn ceramic target as described previously.
  • the sputtering energy on the Zn and Manganese targets are adjusted in such a way that the resulting Manganese content is in the 1-5% range.
  • An exact recipe has to be adjusted to the sputtering equipment that is used and depends on energy, geometry and gases. This technique is, however, well known to the skilled person.
  • the substrate temperature on the deposition substrate is in the same range as when using laser deposition.
  • PAW PAW
  • GGA generalized-gradient approximation

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Biomedical Technology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Hard Magnetic Materials (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Valve Device For Special Equipments (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
PCT/SE2004/000150 2003-02-06 2004-02-06 Ferromagnetic material Ceased WO2004069767A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
HK06113756.1A HK1093056B (en) 2003-02-06 2004-02-06 Ferromagnetic material
JP2006502792A JP2006517175A (ja) 2003-02-06 2004-02-06 強磁性材料
US10/544,655 US7527983B2 (en) 2003-02-06 2004-02-06 Ferromagnetic material
DE602004013735T DE602004013735D1 (de) 2003-02-06 2004-02-06 Ferromagnetisches material
EP04708955A EP1601629B1 (en) 2003-02-06 2004-02-06 Ferromagnetic material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0300352A SE0300352D0 (sv) 2003-02-06 2003-02-06 Ferromagnetism in semiconductors
SE0300352-2 2003-02-06

Publications (1)

Publication Number Publication Date
WO2004069767A1 true WO2004069767A1 (en) 2004-08-19

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Application Number Title Priority Date Filing Date
PCT/SE2004/000150 Ceased WO2004069767A1 (en) 2003-02-06 2004-02-06 Ferromagnetic material

Country Status (9)

Country Link
US (1) US7527983B2 (cg-RX-API-DMAC7.html)
EP (1) EP1601629B1 (cg-RX-API-DMAC7.html)
JP (1) JP2006517175A (cg-RX-API-DMAC7.html)
KR (1) KR20050110627A (cg-RX-API-DMAC7.html)
CN (1) CN100430335C (cg-RX-API-DMAC7.html)
AT (1) ATE395312T1 (cg-RX-API-DMAC7.html)
DE (1) DE602004013735D1 (cg-RX-API-DMAC7.html)
SE (1) SE0300352D0 (cg-RX-API-DMAC7.html)
WO (1) WO2004069767A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7527983B2 (en) * 2003-02-06 2009-05-05 Spintronix Ab Ferromagnetic material
CN103194798A (zh) * 2013-04-02 2013-07-10 浙江大学 一种过渡金属掺杂ZnO基铁磁多晶薄膜及其制备方法

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Publication number Priority date Publication date Assignee Title
TWI237314B (en) * 2004-06-24 2005-08-01 Ind Tech Res Inst Doping method for forming quantum dots
KR101661025B1 (ko) * 2014-09-03 2016-09-29 한국세라믹기술원 반도성 세라믹스 조성물의 제조방법 및 그의 세라믹스 기판
US9966901B2 (en) * 2015-11-19 2018-05-08 Samsung Electronics Co., Ltd. Spin-torque oscillator based on easy-cone anisotropy
CN111809158A (zh) * 2020-07-22 2020-10-23 延安大学 一种过渡金属掺杂ZnO纳米线阵列、制备方法及其应用
CN113308669B (zh) * 2021-04-26 2023-06-23 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种Mn掺杂ZnO稀磁半导体薄膜的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1219731A1 (en) * 1999-09-01 2002-07-03 Japan Science and Technology Corporation FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF

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JP4365495B2 (ja) * 1999-10-29 2009-11-18 ローム株式会社 遷移金属を含有する強磁性ＺｎＯ系化合物およびその強磁性特性の調整方法
EP1367151A1 (en) * 2001-03-02 2003-12-03 Japan Science and Technology Corporation Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
JP2003298139A (ja) * 2002-03-29 2003-10-17 Alps Electric Co Ltd 磁気検出素子
SE0300352D0 (sv) * 2003-02-06 2003-02-06 Winto Konsult Ab Ferromagnetism in semiconductors
SE528394C2 (sv) * 2004-05-18 2006-11-07 Nm Spintronics Ab Mangandopade magnetiska halvledare
SE528900C2 (sv) * 2004-05-18 2007-03-13 Nm Spintronics Ab Koppardopade magnetiska halvledare
JP2006139854A (ja) * 2004-11-12 2006-06-01 Sony Corp 情報記録装置、情報記録方法

Patent Citations (1)

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EP1219731A1 (en) * 1999-09-01 2002-07-03 Japan Science and Technology Corporation FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF

Non-Patent Citations (1)

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Title
KATSUYASU KAWANO ET AL.: "Electron spin resonance study of laser-annealed (Zn,Mn)O Ceramics", APPL. PHYS. LETT., vol. 58, no. 16, 22 April 1991 (1991-04-22), pages 1742 - 1744, XP002234023 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7527983B2 (en) * 2003-02-06 2009-05-05 Spintronix Ab Ferromagnetic material
CN103194798A (zh) * 2013-04-02 2013-07-10 浙江大学 一种过渡金属掺杂ZnO基铁磁多晶薄膜及其制备方法
CN103194798B (zh) * 2013-04-02 2015-08-26 浙江大学 一种过渡金属掺杂ZnO基铁磁多晶薄膜及其制备方法

Also Published As

Publication number Publication date
US20060148105A1 (en) 2006-07-06
CN1816503A (zh) 2006-08-09
ATE395312T1 (de) 2008-05-15
JP2006517175A (ja) 2006-07-20
US7527983B2 (en) 2009-05-05
EP1601629B1 (en) 2008-05-14
HK1093056A1 (zh) 2007-02-23
SE0300352D0 (sv) 2003-02-06
KR20050110627A (ko) 2005-11-23
CN100430335C (zh) 2008-11-05
EP1601629A1 (en) 2005-12-07
DE602004013735D1 (de) 2008-06-26

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