WO2004062958A2 - Integrated component - Google Patents

Integrated component Download PDF

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Publication number
WO2004062958A2
WO2004062958A2 PCT/EP2003/014155 EP0314155W WO2004062958A2 WO 2004062958 A2 WO2004062958 A2 WO 2004062958A2 EP 0314155 W EP0314155 W EP 0314155W WO 2004062958 A2 WO2004062958 A2 WO 2004062958A2
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WO
WIPO (PCT)
Prior art keywords
integrated component
semiconductor switching
switching elements
reference potential
surrounded
Prior art date
Application number
PCT/EP2003/014155
Other languages
German (de)
French (fr)
Other versions
WO2004062958A3 (en
Inventor
Wolfgang Fey
Mario Engelmann
Gunther HÖLZL
Original Assignee
Continental Teves Ag & Co. Ohg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Teves Ag & Co. Ohg filed Critical Continental Teves Ag & Co. Ohg
Priority to DE10394039T priority Critical patent/DE10394039D2/en
Priority to JP2004565970A priority patent/JP4431055B2/en
Priority to EP03789252A priority patent/EP1587705B1/en
Publication of WO2004062958A2 publication Critical patent/WO2004062958A2/en
Publication of WO2004062958A3 publication Critical patent/WO2004062958A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T17/00—Component parts, details, or accessories of power brake systems not covered by groups B60T8/00, B60T13/00 or B60T15/00, or presenting other characteristic features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T17/00—Component parts, details, or accessories of power brake systems not covered by groups B60T8/00, B60T13/00 or B60T15/00, or presenting other characteristic features
    • B60T17/18—Safety devices; Monitoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T8/00—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T8/00—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force
    • B60T8/32—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force responsive to a speed condition, e.g. acceleration or deceleration
    • B60T8/72—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force responsive to a speed condition, e.g. acceleration or deceleration responsive to a difference between a speed condition, e.g. deceleration, and a fixed reference
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Definitions

  • the invention relates to an integrated component, which can be provided in particular in an integrated circuit for controlling loads in electronic regulators of motor vehicle brakes.
  • an electronic brake system can be provided, in which valve coils assigned to individual brakes, among other things, are activated by means of field effect transistors via integrated circuits. If such a system malfunctions, a safety shutdown is usually necessary due to its high relevance for driving safety. In order to ensure their reliability to a particularly high degree, their functional components are usually additionally protected by redundant circuits. For example, a driver output of such a system, which is provided for activating the voltage supply of the valve stages mentioned, is usually connected in such a way that, if necessary, it can be pulled to ground by means of two completely redundant switch-off paths.
  • Such redundant switch-off paths are used in integrated circuits, which can be integrated into an error monitoring IC (FMON) which monitors voltages and is arranged outside a power driver IC (PCU). If the monitored voltages fall outside the specified range, a shutdown transistor is activated via an inverter.
  • FMON-IC usually consists of two separate blocks, so that if one of these blocks is destroyed, the second block ensures safe shutdown.
  • the switch-off paths in such an arrangement are usually active without being switched, ie "* a so-called” pull down transistor is switched through by a constant voltage, a further transistor being driven by a so-called “pulldown” deactivation signal and thereby pulling the supply of the "pulldown” transistor to ground.
  • the switch-off paths in such circuits are designed to be completely redundant for safety reasons, in particular the “pulldown” transistors mentioned being supplied via different voltage supplies. Such a circuit can be problematic, however, if a short circuit to the voltage supply occurs in one of the switch-off paths.
  • the invention is therefore based on the object of specifying an integrated component with a number of semiconductor switching elements which is particularly suitable for use for switching on or switching off load drivers in a motor vehicle brake system and in which, with a particularly simple construction, particularly high operational safety is ensured ,
  • control conductor tracks assigned to the semiconductor switching elements are surrounded by protection zones that are stable at a predefinable reference potential.
  • D-e invention is based on the consideration that, for a particularly high operational safety of the integrated component, cross-effects of short circuits in the semiconductor switching elements provided for safety shutdown on further semiconductor switching elements connected to it redundantly should be avoided consistently.
  • the line routing for controlling the semiconductor components should be designed to be particularly secure against such crosstalk or short circuit. This can be achieved by designing the connection conductor tracks assigned to the semiconductor components classified as particularly safety-relevant, such as gate, drain or source connection conductor tracks, in the manner of a shielded supply line surrounded by a protective conductor. For this purpose, the respective connecting conductor tracks are surrounded by suitably selected and dimensioned protection zones.
  • the protection zones can be, in particular, conductors, conductive areas or conductive tracks which are routed directly adjacent to the connecting conductor track to be protected and are kept at a suitable reference potential.
  • the protective zones can in particular also comprise suitably dimensioned and positioned conductive regions arranged in adjacent layers.
  • the entire connection area assigned to the respective semiconductor switching elements is advantageously designed in the manner of a shielded feed line.
  • connecting wires connected to the control conductor tracks are advantageously surrounded by protective wires that are stable at the reference potential, whereby in an alternative or additional advantageous development, the plug contacts possibly connected to the control conductor tracks are arranged in a common connector housing adjacent to the plug contacts held at the reference potential. Furthermore, each of the semiconductor switching elements is expediently surrounded by a protective zone that is stable at the reference potential and is therefore shielded.
  • control line is advantageously led out of the protection zone surrounding the semiconductor component by the shortest route and as far as possible from drain and source connections.
  • the gate connection is designed to be current-limited by a suitably chosen resistor.
  • ground potential is advantageously provided as the reference potential. Maintaining ground potential on the protection zones can be achieved in a particularly simple manner by connecting them appropriately and permanently to the ground line.
  • the semiconductor switching elements are advantageously designed redundantly. In an alternative or additional advantageous In a further development, the semiconductor switching elements are switched to "de-energized open".
  • the advantages achieved by the invention are, in particular, that by designing the leads to the semiconductor switching elements provided for safety shutdown as shielded leads surrounded by a protective conductor, a particularly high level of design-related security against cross interference of short circuits between the redundant shutdown paths can be achieved. In order to ensure a high level of operational safety, additional protection by external decoupling diodes is not necessary, so that the integrated component can be designed to be comparatively simple.
  • Fig. 1 is an integrated component, in particular for use in electronic controllers of motor vehicle brake systems, and
  • FIG. 2 schematically shows a connection area of the component according to FIG. 1.
  • the integrated component 1 shown schematically and in extracts in FIG. 1 is provided for switching off the voltage supply of valve stages assigned to a brake of a motor vehicle for safety reasons.
  • the integrated component 1 comprises redundant switch-off paths 2, 2 ', via which one for activation tion of the voltage supply to the valve stages 4 associated driver 6 provided driver output 8 can be pulled to ground if necessary.
  • the load drivers, the loads and the switch-off stages can of course also be present several times.
  • the switch-off paths 2, 2 ' are active when not switched and each comprise a semiconductor switching element 10, 10' designed as a so-called “pulldown” transistor for performing a switching function as required. These are switched through by a constant voltage 12.
  • the semiconductor switching elements 10, 10 ' are each preceded within their switch-off path 2, 2' by a further semiconductor switching element 14, 14 ', which is also designed as a transistor and which, if necessary, is controlled by a "pulldown” deactivation signal 16 and thereby pulls the transistor supply to ground. The transistor closes accordingly, so that the "pulldown” is deactivated.
  • the switch-off paths 2, 2 ' are designed to be completely redundant, in particular the semiconductor switching elements 10, 10' designed as transistors being supplied with independent, redundant voltage supplies.
  • the connecting conductor tracks 18, 18 'assigned to the semiconductor switching elements 14, 14' are designed in the manner of shielded conductors.
  • the connecting conductor tracks 18, 18 ' which are arranged on a substrate 20 and which also carry the semiconductor switching elements 10, 10', 14, 14 'are surrounded by protective zones 22.
  • the protection zones 22, which fulfill the function of a protective conductor, are guided adjacent to the connecting conductor tracks 18 and are arranged in the assembly plane of the connecting conductor tracks 18.
  • the connecting conductor tracks 18 are also surrounded by suitably selected protective zones in adjacent component levels.
  • the protection zones 22 are stable to ground as a reference potential.
  • the connecting wire 24 assigned to the connecting conductor track 18, which leads from the substrate 20 to the lead frame 26, is also surrounded by protective wires 28 that can be held to ground as a reference potential.
  • the semiconductor components 14, 14 ' are also surrounded by protective zones that can be held to ground as a reference potential.
  • the semiconductor components 14, 14 ' which are provided in particular as so-called MD-OFF transistors, are surrounded by a ground ring (not shown in more detail) as a further protection zone. ben.
  • a ground ring not shown in more detail
  • the gate connection of the semiconductor switching elements 10, 10 'designed as a transistor is preferably current-limited by a resistor, so that increased safety is ensured in the event of a fault.
  • the transistors are preferably NMOS field effect transistors.
  • the "pulldown" resistance of the semiconductor switching elements 10, 10 ' is chosen so low that with the current limitation provided, the redundant switching path can draw such a current and the corresponding line to ground.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Transportation (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Regulating Braking Force (AREA)
  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Stopping Of Electric Motors (AREA)
  • Electric Propulsion And Braking For Vehicles (AREA)

Abstract

The invention relates to an integrated component (1) which can more particularly be used to connect or disconnect load drivers in a motor vehicle braking system for safety reasons. Said component comprises a plurality of semiconductor switch elements (10, 10', 14, 14') and is constructed in a highly simple manner, offering a particularly high degree of operational reliability. According to the invention, the semiconductor switch elements (10, 10', 14, 14') are associated with control strip conductors (2, 2', 18, 18') which are surrounded by protection areas (22) which can be kept at a given reference potential.

Description

Integriertes BauelementIntegrated component
Die Erfindung bezieht sich auf ein integriertes Bauelement, welches insbesondere in einem integrierten Schaltkreis zur Ansteuerung von Lasten in elektronischen Reglern von Kraftfahrzeugbremsen vorgesehen sein kann.The invention relates to an integrated component, which can be provided in particular in an integrated circuit for controlling loads in electronic regulators of motor vehicle brakes.
Zur Regelung der Bremsen eines Kraftfahrzeugs kann ein elektronisches Bremssystem vorgesehen sein, bei dem über integrierte Schaltkreise unter anderem individuellen Bremsen zugeordnete Ventilspulen mittels Feldeffekttransistoren angesteuert werden. Bei Fehlfunktionen eines derartigen Systems ist üblicherweise aufgrund seiner hohen Relevanz für die Fahrsicherheit eine Sicherheitsabschaltung erforderlich. Um deren Zuverlässigkeit in besonders hohem Maße zu gewährleisten, sind ihre Funktionskomponenten üblicherweise durch redundante Schaltkreise zusätzlich abgesichert. Beispielsweise ist ein Treiberausgang eines derartigen Systems, der zur Aktivierung der Spannungsversorgung der genannten Ventilstufen vorgesehen ist, üblicherweise derart verschaltet, dass er im Bedarfsfall durch zwei komplett redundant ausgeführte Abschaltpfade auf Masse gezogen werden kann.To regulate the brakes of a motor vehicle, an electronic brake system can be provided, in which valve coils assigned to individual brakes, among other things, are activated by means of field effect transistors via integrated circuits. If such a system malfunctions, a safety shutdown is usually necessary due to its high relevance for driving safety. In order to ensure their reliability to a particularly high degree, their functional components are usually additionally protected by redundant circuits. For example, a driver output of such a system, which is provided for activating the voltage supply of the valve stages mentioned, is usually connected in such a way that, if necessary, it can be pulled to ground by means of two completely redundant switch-off paths.
Derartige redundante Abschaltpfade werden in integrierten Schaltkreisen eingesetzt, die in ein außerhalb eines Leis- tungstreiber-ICs (PCU) angeordneten Fehlerüberwachungs-IC (FMON), welches Spannungen überwacht, integriert sein können. Geraten die überwachten Spannungen außerhalb des spezifizierten Bereiches, wird ein Abschalttransistor über einen Inverter aktiviert. Das FMON-IC besteht in der Regel aus zwei getrennten Blöcken, so dass bei Zerstörung eines dieser Blöcke der zweite Block ein sicheres Abschalten gewährleistet.Such redundant switch-off paths are used in integrated circuits, which can be integrated into an error monitoring IC (FMON) which monitors voltages and is arranged outside a power driver IC (PCU). If the monitored voltages fall outside the specified range, a shutdown transistor is activated via an inverter. The FMON-IC usually consists of two separate blocks, so that if one of these blocks is destroyed, the second block ensures safe shutdown.
Die Abschaltpfade in einer derartigen Anordnung sind üblicherweise ungeschaltet aktiv, d. h."* ein so genannter „Pull- down„-Transistor wird von einer konstanten Spannung durchgeschaltet, wobei ein weiterer Transistor von einem so genannter „Pulldown„-Deaktivierungssignal angesteuert wird und dabei die Versorgung des „Pulldown„-Transistors auf Masse zieht. Gerade bei der Anwendung in Kraftfahrzeug-Bremssystemen sind in derartigen Schaltungen aus Sicherheitsgründen die Abschaltpfade vollständig redundant ausgelegt, wobei insbesondere auch die genannten „Pulldown„-Transistoren über unterschiedliche Spannungversorgungen bespeist sind. Problematisch kann in einer derartigen Schaltung aber sein, falls bei einem der Abschaltpfade ein Kurzschluss zur Spannungsversorgung auftritt. Dies könnte auch die Funktionsfähigkeit des zweiten Abschaltpfades gefährden, da dieser im Bedarfsfall, also zur funtkionsgerechten Abschaltung des Treiberausgangs, auch die Spannungsver-sorgung auf Masseniveau ziehen müsste. Um dies zu vermeiden, sind die redundanten Abschaltpfade üblicherweise jeweils durch Dioden voneinander entkoppelt .The switch-off paths in such an arrangement are usually active without being switched, ie "* a so-called" pull down transistor is switched through by a constant voltage, a further transistor being driven by a so-called "pulldown" deactivation signal and thereby pulling the supply of the "pulldown" transistor to ground. Especially when used in motor vehicle brake systems, the switch-off paths in such circuits are designed to be completely redundant for safety reasons, in particular the “pulldown” transistors mentioned being supplied via different voltage supplies. Such a circuit can be problematic, however, if a short circuit to the voltage supply occurs in one of the switch-off paths. This could also jeopardize the functionality of the second switch-off path, since if necessary, in order to switch off the driver output properly, it would also have to pull the power supply to ground level. To avoid this, the redundant switch-off paths are usually decoupled from one another by diodes.
Eine derartige Absicherung der Abschaltpfade über Dioden bedingt jedoch einen erhöhten Herstellungs- und Montageaufwand, sowie aufgrund des Spannungsabfalls über die Dioden eine Reduktion des „Pulldown„-Effekts .Such protection of the switch-off paths via diodes, however, requires increased manufacturing and assembly costs, and, due to the voltage drop across the diodes, a reduction in the “pulldown” effect.
Der Erfindung liegt daher die Aufgabe zugrunde, ein insbesondere zum Einsatz zum An- oder Abschalten von Lasttreibern in einem Kraftfahrzeug-Bremssystem aus Sicherheitsgründen geeignetes integriertes Bauelement mit einer Anzahl von Halbleiterschaltelementen anzugeben, bei dem bei besonders einfach gehaltener Bauweise eine besonders hohe betriebliche Sicherheit gewährleistet ist.The invention is therefore based on the object of specifying an integrated component with a number of semiconductor switching elements which is particularly suitable for use for switching on or switching off load drivers in a motor vehicle brake system and in which, with a particularly simple construction, particularly high operational safety is ensured ,
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, dass den Halbleiterschaltelementen zugeordnete Ansteuerleiterbahnen von auf einem vorgebbaren Bezugspotential haltbaren Schutzzonen umgeben sind.According to the invention, this object is achieved in that control conductor tracks assigned to the semiconductor switching elements are surrounded by protection zones that are stable at a predefinable reference potential.
D-e Erfindung geht dabei von der Überlegung aus, dass für eine besonders hohe betriebliche Sicherheit des integrierten Bauelements Querauswirkungen von Kurzschlüssen bei den zur Sicherheitsabschaltung vorgesehenen Halbleiterschaltelementen auf dazu redundant geschaltete weitere Halbleiterschaltelemente konsequent vermieden werden sollten. Um dies auf besonders einfache Weise zu erreichen und insbesondere den Einsatz dazu vorgesehener Entkoppel-Dioden entbehrlich zu machen, sollte die Leitungsfuhrung zur Ansteuerung der Halbleiterbauelemente besonders sicher gegenüber einem derartigen Ubersprechen oder Kurzschluss ausgeführt sein. Dies ist erreichbar, indem die den als besonders sicherheitsrelevant eingestuften Halbleiterbauelementen zugeordneten An- schlussleiterbahnen, wie beispielsweise Gate-, Drain- oder Source-Anschluss-Leiterbahnen, in der Art einer geschirmten, von einem Schutzleiter umgebenen Zuleitung ausgeführt sind. Dazu sind die jeweiligen Anschluss-leiterbahnen von geeignet gewählten und dimensionierten Schutzzonen umgeben.D-e invention is based on the consideration that, for a particularly high operational safety of the integrated component, cross-effects of short circuits in the semiconductor switching elements provided for safety shutdown on further semiconductor switching elements connected to it redundantly should be avoided consistently. In order to achieve this in a particularly simple manner and, in particular, to make the use of decoupling diodes provided for this purpose unnecessary, the line routing for controlling the semiconductor components should be designed to be particularly secure against such crosstalk or short circuit. This can be achieved by designing the connection conductor tracks assigned to the semiconductor components classified as particularly safety-relevant, such as gate, drain or source connection conductor tracks, in the manner of a shielded supply line surrounded by a protective conductor. For this purpose, the respective connecting conductor tracks are surrounded by suitably selected and dimensioned protection zones.
Bei den Schutzzonen kann es sich dabei insbesondere um Leiter, leitende Flachen oder leitende Bahnen handeln, die der zu schutzenden Anschlussleiterbahn unmittelbar benachbart gefuhrt sind und auf einem geeigneten Bezugspotential gehalten werden. Bei der Anordnung der Halbleiterbau-elemente in integrierter Bauweise auf einem Substrat können die Schutzzonen dabei insbesondere auch m benachbarten Lagen angeordnete, geeignet dimensionierte und positionierte leitfahige Bereiche umfassen. Vorteilhafterweise ist für eine besonders hohe betriebliche Sicherheit der gesamte den jeweiligen Halbleiterschaltelementen zugeordnete Anschlussbereich in der Art einer geschirmten Zuleitung ausgeführt. Dazu sind vorteilhafterweise mit den Ansteuerleiterbahnen verbundene Anschlussdrähte von auf dem Bezugspotential haltbaren Schutzdrähten umgeben, wobei in alternativer oder zusätzlicher vorteilhafter Weiterbildung die mit den Ansteuerleiterbahnen ggf. verbundenen Steckerkontakte in einem gemeinsamen Steckergehäuse zu auf dem Bezugspotential gehaltenen Steckerkontakten benachbart angeordnet sind. Weiterhin ist zweckmäßigerweise jedes der Halbleiterschaltelemente an sich von einer auf dem Bezugspotential haltbaren Schutzzone umgeben und somit geschirmt ausgeführt.The protection zones can be, in particular, conductors, conductive areas or conductive tracks which are routed directly adjacent to the connecting conductor track to be protected and are kept at a suitable reference potential. When the semiconductor components are arranged in an integrated design on a substrate, the protective zones can in particular also comprise suitably dimensioned and positioned conductive regions arranged in adjacent layers. For a particularly high level of operational security, the entire connection area assigned to the respective semiconductor switching elements is advantageously designed in the manner of a shielded feed line. For this purpose, connecting wires connected to the control conductor tracks are advantageously surrounded by protective wires that are stable at the reference potential, whereby in an alternative or additional advantageous development, the plug contacts possibly connected to the control conductor tracks are arranged in a common connector housing adjacent to the plug contacts held at the reference potential. Furthermore, each of the semiconductor switching elements is expediently surrounded by a protective zone that is stable at the reference potential and is therefore shielded.
Bei einer derartigen Anordnung und einer Ausgestaltung des Halbleiterschaltelements als Transistor ist die Steuerleitung (Gate) vorteilhafterweise auf dem kürzesten Weg und in möglichst großem Abstand zu Drain- und Source-Anschlüssen aus der das Halbleiterbauelement umgebenden Schutzzone herausgeführt. Der Gate-Anschluss ist dabei in weiterer vorteilhafter Ausgestaltung durch einen geeignet gewählten Widerstand strombegrenzt ausgeführt.With such an arrangement and a configuration of the semiconductor switching element as a transistor, the control line (gate) is advantageously led out of the protection zone surrounding the semiconductor component by the shortest route and as far as possible from drain and source connections. In a further advantageous embodiment, the gate connection is designed to be current-limited by a suitably chosen resistor.
Eine besonders hohe betriebliche Sicherheit ist erreichbar, indem als Bezugspotential vorteilhafterweise Massepotential vorgesehen ist. Die Aufrechterhaltung von Massepotential auf den Schutzzonen ist dabei in besonders einfacher Weise erreichbar, indem diese geeignet und dauerhaft mit Masseleitung verbunden sind.A particularly high level of operational safety can be achieved if ground potential is advantageously provided as the reference potential. Maintaining ground potential on the protection zones can be achieved in a particularly simple manner by connecting them appropriately and permanently to the ground line.
Um eine hohe betriebliche Sicherheit zu gewährleisten, sind die Halbleiterschaltelemente vorteilhafterweise redundant ausgeführt. In alternativer oder zusätzlicher vorteilhafter Weiterbildung sind die Halbleiterschaltelemente stromlos offen "geschaltet .In order to ensure a high level of operational safety, the semiconductor switching elements are advantageously designed redundantly. In an alternative or additional advantageous In a further development, the semiconductor switching elements are switched to "de-energized open".
Die mit der Erfindung erzielten Vorteile bestehen insbesondere darin, dass durch die Ausführung der Zuleitungen zu den zur Sicherheitsabschaltung vorgesehenen Halbleiterschaltelementen als geschirmte, von einem Schutzleiter umgebene Zuleitungen eine besonders hohe auslegungsbedingte Sicherheit gegen eine Querbeeinflussung von Kurzschlüssen zwischen den redundant ausgeführten Abschaltpfaden erreichbar ist. Dabei ist zur Gewährleistung einer hohen betrieblichen Sicherheit eine zusätzliche Absicherung durch externe Entkoppel-Dioden nicht erforderlich, so dass das integrierte Bauelement vergleichsweise einfach ausgeführt sein kann.The advantages achieved by the invention are, in particular, that by designing the leads to the semiconductor switching elements provided for safety shutdown as shielded leads surrounded by a protective conductor, a particularly high level of design-related security against cross interference of short circuits between the redundant shutdown paths can be achieved. In order to ensure a high level of operational safety, additional protection by external decoupling diodes is not necessary, so that the integrated component can be designed to be comparatively simple.
Ein Ausführungsbeispiel der Erfindung wird anhand einer Zeichnung näher erläutert. Darin zeigen:An embodiment of the invention is explained in more detail with reference to a drawing. In it show:
Fig. 1 ein integriertes Bauelement, insbesondere zur Anwendung in elektronischen Reglern von Kraftfahrzeugbremssystemen, undFig. 1 is an integrated component, in particular for use in electronic controllers of motor vehicle brake systems, and
Fig. 2 schematisch einen Anschlussbereich des Bauelements nach Fig . 1.2 schematically shows a connection area of the component according to FIG. 1.
Gleiche Teile sind in beiden Figuren mit denselben Bezugszeichen versehen.Identical parts are provided with the same reference symbols in both figures.
Das in Fig. 1 schematisch und auszugsweise dargestellte integrierte Bauelement 1 ist zur bedarfsweisen Abschaltung der Spannungsversorgung von einer Bremse eines Kraftfahrzeugs zugeordneten Ventilstufen aus Sicherheitsgründen vorgesehen. Dazu umfasst das integrierte Bauelement 1 redundant ausgeführte Abschaltpfade 2, 2', übe*tr die ein zur Aktivie- rung der Spannungsversorgung des den Ventilstufen 4 zugeordneten Treibers 6 vorgesehener Treiberausgang 8 im Bedarfsfall auf Masse gezogen werden kann. Die Lasttreiber, die Lasten und die Abschaltstufen können selbstverständlich auch mehrfach vorhanden sein.The integrated component 1 shown schematically and in extracts in FIG. 1 is provided for switching off the voltage supply of valve stages assigned to a brake of a motor vehicle for safety reasons. For this purpose, the integrated component 1 comprises redundant switch-off paths 2, 2 ', via which one for activation tion of the voltage supply to the valve stages 4 associated driver 6 provided driver output 8 can be pulled to ground if necessary. The load drivers, the loads and the switch-off stages can of course also be present several times.
Die Abschaltpfade 2, 2' sind ungeschaltet aktiv und umfassen zur bedarfsweisen Durchführung einer Schaltfunktion jeweils ein als so genannter „Pulldown„-Transistor ausgeführtes Halbleiterschaltelement 10, 10'. Diese werden von einer konstanten Spannung 12 durchgeschaltet. Den Halbleiterschaltelementen 10, 10' ist jeweils innerhalb ihres Abschaltpfads 2, 2' ein ebenfalls als Transistor ausgeführtes, weiteres Halbleiterschaltelement 14, 14' vorgeschaltet, das im Bedarfsfall von einem „Pulldown„-Deaktivierungssignal 16 angesteuert wird und dabei die Transistorversorgung auf Masse zieht. Der Transistor schließt demzufolge, so dass der „Pulldown,, deaktiviert ist.The switch-off paths 2, 2 'are active when not switched and each comprise a semiconductor switching element 10, 10' designed as a so-called “pulldown” transistor for performing a switching function as required. These are switched through by a constant voltage 12. The semiconductor switching elements 10, 10 'are each preceded within their switch-off path 2, 2' by a further semiconductor switching element 14, 14 ', which is also designed as a transistor and which, if necessary, is controlled by a "pulldown" deactivation signal 16 and thereby pulls the transistor supply to ground. The transistor closes accordingly, so that the "pulldown" is deactivated.
Aus Sicherheitsgründen sind die Abschaltpfade 2, 2' vollständig redundant ausgeführt, wobei insbesondere die als Transistoren ausgeführten Halbleiterschaltelemente 10, 10' mit unabhängigen, redundant ausgeführten Spannungsversorgungen beaufschlagt sind.For safety reasons, the switch-off paths 2, 2 'are designed to be completely redundant, in particular the semiconductor switching elements 10, 10' designed as transistors being supplied with independent, redundant voltage supplies.
Für eine besonders hohe betriebliche Sicherheit ist die Redundanz der Abschaltpfade 2, 2' konsequent eingehalten. Dabei sind die Abschaltpfade 2, 2' auch gegen ein Übersprechen von Kurzschlüssen gegen Versorgungspotential abge-sichert . Um dies mit einfacher Bauweise und insbesondere unter Verzicht auf die Verwendung externer Entkoppel-Dioden zu gewährleisten, sind die den Halbleiterschaltelementen 14, 14' zugeordneten Anschlussleiterbahnen 18, 18' in der Art geschirmter Leiter ausgeführt. Dazu sind, wie dies im Ausschnitt nach Fig. 2 erkennbar ist, die auf einem auch die Halbleiterschaltelemente 10, 10', 14, 14' tragenden Substrat 20 angeordneten Anschlussleiterbahnen 18, 18' von Schutzzonen 22 umgeben. Die Schutzzonen 22, die die Funktion eines Schutzleiters erfüllen, sind dabei zu den Anschlussleiterbahnen 18 benachbart geführt und in der Bestückungsebene der Anschlussleiterbahnen 18 angeordnet. Um zudem auch eine Absicherung in Richtung orthogonal zur in Fig. 2 gezeigten Bestückungsebene zu gewährleisten, sind die Anschlussleiterbahnen 18 auch in benachbarten Bestückungsebenen von geeignet gewählten Schutzzonen umgeben.The redundancy of the shutdown paths 2, 2 'is consistently observed for particularly high operational safety. The shutdown paths 2, 2 'are also protected against crosstalk from short circuits against supply potential. In order to ensure this with a simple design and in particular without using external decoupling diodes, the connecting conductor tracks 18, 18 'assigned to the semiconductor switching elements 14, 14' are designed in the manner of shielded conductors. For this purpose, as can be seen in the detail according to FIG. 2, the connecting conductor tracks 18, 18 'which are arranged on a substrate 20 and which also carry the semiconductor switching elements 10, 10', 14, 14 'are surrounded by protective zones 22. The protection zones 22, which fulfill the function of a protective conductor, are guided adjacent to the connecting conductor tracks 18 and are arranged in the assembly plane of the connecting conductor tracks 18. In order to also ensure protection in the direction orthogonal to the component level shown in FIG. 2, the connecting conductor tracks 18 are also surrounded by suitably selected protective zones in adjacent component levels.
Die Schutzzonen 22 sind auf Masse als Bezugspotential haltbar. In der Art einer vollständigen Schirmung ist aber auch der der Anschlussleiterbahn 18 zugeordnete Anschlussdraht 24, der vom Substrat 20 zum Leadframe 26 führt, von auf Masse als Bezugspotential haltbaren Schutzdrähten 28 umgeben. In nicht näher dargestellter Weise sind zudem die Halbleiterbauelemente 14, 14' von auf Masse als Bezugspotential haltbaren Schutzzonen umgeben.The protection zones 22 are stable to ground as a reference potential. In the manner of complete shielding, however, the connecting wire 24 assigned to the connecting conductor track 18, which leads from the substrate 20 to the lead frame 26, is also surrounded by protective wires 28 that can be held to ground as a reference potential. In a manner not shown, the semiconductor components 14, 14 'are also surrounded by protective zones that can be held to ground as a reference potential.
Die mit den Ansteuerleiterbahnen 18, 18' verbundenen Steckerkontakte 30 sind zudem in einem gemeinsamem Steckergehäuse zu auf Masse als Bezugspotential gehaltenen Steckerkontakten 32 benachbart angeordnet, so dass das gesamte, sich vom Steckerkontakt 30 über den Anschlussdraht 24 bis zur Anschlussleiterbahn 18 erstreckende Zuleitungssystem geschirmt ausgeführt ist.The plug contacts 30 connected to the control conductor tracks 18, 18 'are also arranged in a common connector housing adjacent to the plug contacts 32 held at ground as a reference potential, so that the entire supply system, which extends from the plug contact 30 via the connecting wire 24 to the connecting conductor track 18, is shielded ,
Die insbesondere als so genannte MD-OFF-Transistoren vorgesehenen Halbleiterbauelemente 14, 14' sind von einem nicht näher dargestellten Massering als weitere Schutzzone umge- ben. Zusätzlich ist es zweckmäßig, die Steuerleitung (Gate) auf dem kürzesten Weg und in möglichst großem Abstand zu Drain- und Source-Anschlüssen aus diesem Ring herauszuführen .The semiconductor components 14, 14 ', which are provided in particular as so-called MD-OFF transistors, are surrounded by a ground ring (not shown in more detail) as a further protection zone. ben. In addition, it is expedient to lead the control line (gate) out of this ring by the shortest route and as far as possible from the drain and source connections.
Der Gate-Anschluss der als Transistor ausgeführten Halbleiterschaltelemente 10, 10' ist bevorzugt durch einen Widerstand strombegrenzt, so dass im Fehlerfall erhöhte Sicherheit gewährleistet ist. Bei den Transistoren handelt es sich vorzugsweise um NMOS-Feldeffekttransistoren.The gate connection of the semiconductor switching elements 10, 10 'designed as a transistor is preferably current-limited by a resistor, so that increased safety is ensured in the event of a fault. The transistors are preferably NMOS field effect transistors.
Der „Pulldown„-Widerstand der Halbleiterschaltelemente 10, 10' ist dabei derart gering gewählt, dass mit der vorgesehenen Strombegrenzung der jeweils redundante Schaltpfad einen solchen Strom sowie die entsprechende Leitung auf Masse ziehen kann. The "pulldown" resistance of the semiconductor switching elements 10, 10 'is chosen so low that with the current limitation provided, the redundant switching path can draw such a current and the corresponding line to ground.
Bezugs zeichenlisteReference character list
1 Bauelement1 component
2, 2' Abschaltpfade2, 2 'shutdown paths
4 Ventilstufen4 valve stages
6 Treiber6 drivers
8 Treiberausgang8 driver output
10, 10' HaIbleiterschaltelement10, 10 'semiconductor switching element
12 Spannung12 tension
14, 14' HaIbleiterschaltelement14, 14 'semiconductor switching element
16 „Pulldown„-Deaktivierungssignal16 "pulldown" deactivation signal
18, 18' Anschlussleiterbahn18, 18 'connecting conductor track
20 Substrat20 substrate
22 Schutzzone22 protection zone
24 Anschlussdraht24 connecting wire
26 Leadframe26 leadframe
28 Schutzdrähte28 protective wires
30, 32 Steckerkontakte 30, 32 plug contacts

Claims

Patentansprüche (18.02.2004) Claims (02/18/2004)
1. Integriertes Bauelement (1) mit einer Anzahl von Halbleiterschaltelementen (10, 10', 14, 14') zum An- oder Abschalten von Lasttreibern (6) aus Sicherheitsgründen, dadurch gekennzeichnet, dass den Halbleiterschaltelementen (10, 10', 14, 14') zugeordnete Ansteuerleiterbahnen (2, 2', 18, 18') von auf einem vorgebbaren Bezugspotential haltbaren Schutzzonen (22) umgeben sind.1. Integrated component (1) with a number of semiconductor switching elements (10, 10 ', 14, 14') for switching on or off load drivers (6) for safety reasons, characterized in that the semiconductor switching elements (10, 10 ', 14, 14 ') assigned control conductor tracks (2, 2', 18, 18 ') are surrounded by protective zones (22) which can be held at a predefinable reference potential.
2. Integriertes Bauelement (1) nach Anspruch 1, dadurch gekennzeichnet:, dass mit den Ansteuerleiterbahnen (2, 2', 18, 18') verbundene Anschlussdrähte (24) von auf dem Bezugspotential haltbaren Schutzdrähten (28) umgeben sind.2. Integrated component (1) according to claim 1, characterized in that the connecting wires (24) connected to the drive conductor tracks (2, 2 ', 18, 18') are surrounded by protective wires (28) which are stable at the reference potential.
3. Integriertes Bauelement (1) nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass jedes der Halbleiterschaltelemente (10, 10*, 14, 14') von einer auf dem Bezugspotential haltbaren Schutzzone (22) umgeben ist.3. Integrated component (1) according to claim 1 or 2, characterized in that each of the semiconductor switching elements (10, 10 *, 14, 14 ') is surrounded by a protective zone (22) which is stable at the reference potential.
4. Integriertes Bauelement (1) nach einem der Ansprüche 1 bis4. Integrated component (1) according to one of claims 1 to
3, dadurch gekennzeichnet, dass die mit den Ansteuerleiterbahnen (2, 2', 18, 18') verbundenen Steckerkontakte (30, 32) in einem gemeinsamen Steckergehäuse zu auf dem Bezugspotential gehaltenen Steckerkontakten (30, 32) benachbart angeordnet sind.3, characterized in that the plug contacts (30, 32) connected to the control conductor tracks (2, 2 ', 18, 18') are arranged in a common plug housing adjacent to the plug contacts (30, 32) held at the reference potential.
5. Integriertes Bauelement # (1) nach einem der Ansprüche 1 bis5. Integrated component # (1) according to one of claims 1 to
4, dadurch gekennzeichnet, dass als Bezugspotential Massepotential vorgesehen ist. 4, characterized in that ground potential is provided as the reference potential.
6. Integriertes Bauelement (1) nach einem der Ansprüche 1 bis6. Integrated component (1) according to one of claims 1 to
5, dadurch gekennzeichnet, dass die Halbleiterschaltelemente (10, 10', 14, 14') redundant ausgeführt sind.5, characterized in that the semiconductor switching elements (10, 10 ', 14, 14') are designed redundantly.
7. Integriertes Bauelement (1) nach einem der Ansprüche 1 bis7. Integrated component (1) according to one of claims 1 to
6, dadurch gekennzeichnet, dass die Halbleiterschaltelemente (10, 10', 14, 14') stromlos offen geschaltet sind.6, characterized in that the semiconductor switching elements (10, 10 ', 14, 14') are open when de-energized.
8. Integriertes Bauelement (1) nach einem der Ansprüche 1 bis8. Integrated component (1) according to one of claims 1 to
7, dadurch gekennzeichnet, dass den Halbleiterschaltelementen (10, 10', 14, 14') zugeordnete Steuerletiungen strombegrenzt sind. 7, characterized in that control positions associated with the semiconductor switching elements (10, 10 ', 14, 14') are current-limited.
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JP2006515817A (en) 2006-06-08
CN100379005C (en) 2008-04-02
JP4431055B2 (en) 2010-03-10
WO2004062958A3 (en) 2009-04-16
KR100983205B1 (en) 2010-09-20
EP1587705A2 (en) 2005-10-26
KR20050094846A (en) 2005-09-28
CN1748311A (en) 2006-03-15
EP1587705B1 (en) 2011-06-15
DE10394039D2 (en) 2006-03-23

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