WO2004061856A3 - Spin detection magnetic memory - Google Patents

Spin detection magnetic memory Download PDF

Info

Publication number
WO2004061856A3
WO2004061856A3 PCT/FR2003/003863 FR0303863W WO2004061856A3 WO 2004061856 A3 WO2004061856 A3 WO 2004061856A3 FR 0303863 W FR0303863 W FR 0303863W WO 2004061856 A3 WO2004061856 A3 WO 2004061856A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic memory
detection magnetic
spin detection
disposed
zones
Prior art date
Application number
PCT/FR2003/003863
Other languages
French (fr)
Other versions
WO2004061856A2 (en
Inventor
Viatcheslav Safarov
Original Assignee
Univ Aix Marseille Ii
Centre Nat Rech Scient
Viatcheslav Safarov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Aix Marseille Ii, Centre Nat Rech Scient, Viatcheslav Safarov filed Critical Univ Aix Marseille Ii
Priority to AU2003303658A priority Critical patent/AU2003303658A1/en
Priority to JP2004564294A priority patent/JP2006512763A/en
Priority to EP03814485A priority patent/EP1595263A2/en
Publication of WO2004061856A2 publication Critical patent/WO2004061856A2/en
Publication of WO2004061856A3 publication Critical patent/WO2004061856A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention relates to a spin detection magnetic memory disposed on a semiconductor junction (103) formed by 2 adjacent zones, the first (101) and the second (102) zones having a conductivity which is respectively a first and second type; said memory comprises a first (110) and a second (120) connection cell disposed on the sides of said junction (103), each cell being provided with a magnetization module (111-112, 121-122). At least one of said cells comprises a polarization electrode (113, 123) on top of the magnetization module.
PCT/FR2003/003863 2002-12-27 2003-12-22 Spin detection magnetic memory WO2004061856A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003303658A AU2003303658A1 (en) 2002-12-27 2003-12-22 Spin detection magnetic memory
JP2004564294A JP2006512763A (en) 2002-12-27 2003-12-22 Spin detection magnetic memory
EP03814485A EP1595263A2 (en) 2002-12-27 2003-12-22 Spin detection magnetic memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0216844A FR2849526B1 (en) 2002-12-27 2002-12-27 MAGNETIC MEMORY WITH SPIN DETECTION
FR02/16844 2002-12-27

Publications (2)

Publication Number Publication Date
WO2004061856A2 WO2004061856A2 (en) 2004-07-22
WO2004061856A3 true WO2004061856A3 (en) 2004-08-26

Family

ID=32480276

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/003863 WO2004061856A2 (en) 2002-12-27 2003-12-22 Spin detection magnetic memory

Country Status (6)

Country Link
EP (1) EP1595263A2 (en)
JP (1) JP2006512763A (en)
CN (1) CN1745430A (en)
AU (1) AU2003303658A1 (en)
FR (1) FR2849526B1 (en)
WO (1) WO2004061856A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692954B2 (en) 2007-03-12 2010-04-06 International Business Machines Corporation Apparatus and method for integrating nonvolatile memory capability within SRAM devices
JP2010287664A (en) * 2009-06-10 2010-12-24 Tdk Corp Spin conduction element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962905A (en) * 1996-09-17 1999-10-05 Kabushiki Kaisha Toshiba Magnetoresistive element
US20010031547A1 (en) * 2000-03-07 2001-10-18 Tohoku University Method of generating spin-polarized conduction electron and semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962905A (en) * 1996-09-17 1999-10-05 Kabushiki Kaisha Toshiba Magnetoresistive element
US20010031547A1 (en) * 2000-03-07 2001-10-18 Tohoku University Method of generating spin-polarized conduction electron and semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
E.I. RASHBA: "Theory of electrical spin injection : tunnel contacts as a solution of the conductivity mismatch problem", PHYSICAL REVIEW B, vol. 62, no. 24, 15 December 2000 (2000-12-15) - 15 December 2000 (2000-12-15), USA, pages 267 - 270, XP002253319 *
V.I. SAFAROV, V.F. MOTSNYI, J. DE BOECK, J. DAS, W. VAN ROY, G. BORGHS AND E. GOOVAERTS: "Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure", APPLIED PHYSICS LETTERS, vol. 81, no. 2, 8 July 2002 (2002-07-08) - 8 July 2002 (2002-07-08), USA, pages 265 - 267, XP002253320 *

Also Published As

Publication number Publication date
WO2004061856A2 (en) 2004-07-22
CN1745430A (en) 2006-03-08
EP1595263A2 (en) 2005-11-16
JP2006512763A (en) 2006-04-13
AU2003303658A1 (en) 2004-07-29
AU2003303658A8 (en) 2004-07-29
FR2849526B1 (en) 2005-03-25
FR2849526A1 (en) 2004-07-02

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