WO2004048491A1 - B-stageable die attach adhesives - Google Patents
B-stageable die attach adhesives Download PDFInfo
- Publication number
- WO2004048491A1 WO2004048491A1 PCT/US2003/037109 US0337109W WO2004048491A1 WO 2004048491 A1 WO2004048491 A1 WO 2004048491A1 US 0337109 W US0337109 W US 0337109W WO 2004048491 A1 WO2004048491 A1 WO 2004048491A1
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- 0 CC(C=C(C1)C2*1N)S2(=O)=O Chemical compound CC(C=C(C1)C2*1N)S2(=O)=O 0.000 description 1
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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Definitions
- the present invention relates to b-stageable die attach adhesives, methods of preparing such adhesives, methods of applying such adhesives to the die and other substrate surfaces, and assemblies prepared therewith for connecting microelectronic circuitry.
- Bismaleimides occupy a prominent position in the spectrum of thermosetting resins, and a number of bismaleimides are commercially available. Bismaleimides have been used for the production of moldings and adhesive joints, heat-resistant composite materials, and high temperature coatings. More recently, Henkel Loctite Corporation has commercialized a number of products based in part on certain bismaleimides for the attachment of semiconductor chips -to circuit boards, which have been well received commercially from within the microelectronic industry. These products are covered in one or more of U.S. Patent Nos. 5,789,757 (Husson) , 6,034,194 (Dershem) , 6,034,195 (Dershem) and 6,187,886 (Husson).
- B-stageable of pre-applied adhesives themselves are not a new commercial entity. For instance, Henkel Loctite. has a substantial business in pre-applied threadlocker adhesives, which involve (meth) acrylate chemistry, for use in connection with nut and bolt assemblies, curable by either a photocure mechanism, a heat cure mechanism, or combinations thereof, with an optional secondary anaerobic cure mechanism.
- the present invention is directed to a b-stage curable composition, which includes a solid component heat curable at a first temperature; a liquid component, which is either heat curable at a second temperature or curable upon exposure to radiation in the electromagnetic spectrum; and a heat cure catalyst for the solid curable component.
- the invention further provides a method for preparing the b-stageable heat curable composition, which includes providing a solid curable component heat curable at a first temperature, a liquid curable component, which is either heat curable at a second temperature or curable upon exposure to radiation in the electromagnetic spectrum, and a heat cure catalyst for the solid curable component; and mixing together the solid curable component, liquid curable component and the heat cure catalyst.
- the method here may further include exposing the composition to conditions favorable to effect cure of the liquid curable component, exposing the composition to a temperature condition sufficient to melt the solid curable component, and exposing the composition to a temperature condition sufficient to cure the melted, solid curable component .
- the invention still further provides a method for adhesively attaching one substrate, such as a chip die, to another substrate, such as a circuit board or a another chip die, which includes applying the inventive composition to one of the substrates; exposing the composition-applied substrates to conditions favorable to effect cure of the liquid curable component thereof, thereby forming a b-staged curable film; exposing the b-staged curable film to a temperature condition sufficient to melt the solid curable component thereof; adjoining the substrates to form an assembly where the substrates are separated by the previously-applied composition; and exposing the curable film to a temperature condition sufficient to cure the melted, solid curable component.
- the b-stageable heat curable composition may be preapplied onto one or more metallized contact pads located on the substrate.
- the heat curing conditions for the b-staged film may involve subjecting the assembly to a temperature in the range of about 150°C up to about 200 °C for a period of time of about 0.25 minutes up to about 2 minutes.
- FIG. 1 is a schematic representation of a semiconductor chip in one embodiment of the present invention, prior to assembly with a substrate.
- FIG. 2 is a schematic representation of a circuit assembly including the semiconductor chip of FIG. 1 assembled to a substrate.
- FIG. 3 is a schematic representation of a circuit assembly including a semiconductor chip assembled to a chip scale package in a further embodiment of the present invention.
- FIG. 4 is a schematic representation of a stacked chip die application.
- solid heat curable component epoxies, episulfides, maleimides, itaconimides and nadimides are particularly desirable.
- the epoxy resin in the solid state may include the mono-functional epoxy compounds: C4-C28 alkyl glycidyl ethers;
- epoxy resins in the solid state suitable for use in the present invention are polyglycidyl derivatives of phenolic compounds, such as those available from Resolution Performance, under the EPON tradename, such as EPON 1009F [bisphenol A epoxy resin (CAS No. 25036-25- 3)], EPON 1001F, EPON 1002F, EPON 1004F, EPON 1007F, EPON 3001, EPON 3002, EPON 2002, EPON 2003, EPON 2004, EPON 2005, EPON 2012, EPON 2014, EPON 2024, and EPON 2042; from Dow Chemical Co.
- EPON 1009F bisphenol A epoxy resin (CAS No. 25036-25- 3)
- DER trade designation such as DER 331, DER 332, DER 383, DER 354, and DER 542; from Vantico Inc., Brewster, New York under the ARALDITE tradename, such as ARALDITE [phenol-4, 4' - (1- methylethylidene)bis with (chloromethyl) oxirane ' (CAS No. 25068- 38-6)], ARALDITE ECN 1299 [formaldehyde, polymer with (chloromethyl) oxirane and 2-methylphenol, melting point 85-100°C (CAS No.
- ARALDITE ECN 1285 [formaldehyde, polymer with (chloromethyl) oxirane and 2-methylphenol, melting ' point 80-90°C (CAS No. 29690-82-2)] and ARALDITE GT 7097 US [(phenol, 4- (1, 1-dimethylethyl) , polymer ' with
- epoxy resins include polyepoxides prepared from polyols and the like and polyglycidyl derivatives of phenol-formaldehyde novolacs, the latter of which are available commercially from Dow Chemical Company under the tradename DEN, such as DEN 431, DEN 438, and DEN 439.
- Polyglycidyl adducts of amines, aminoalcohols and polycarboxylic acids are also useful in this invention, commercially available resins of which include GLYAMINE 135, GLYAMINE 125, and GLYAMINE 115 from BP Chemicals, LTD.; ARALDITE MY 720, ARALDITE MY 721, ARALDITE MY 0500, and ARALDITE MY 0510 from Vantico Inc.
- episulfides are desirable as well, whether they are full or partial episulfides, provided that they are in the solid state. Episulfides may be commercially available or readily prepared from the corresponding epoxy through known synthetic methods .
- the maleimides, nadimides, and itaconimides in the solid state include those compounds having the following structures I, II and III, respectively where:
- each R 2 is independently selected from hydrogen or lower alkyl
- J is a monovalent or a polyvalent moiety comprising organic or organosiloxane radicals, and combinations of two or more thereof.
- R 2 is independently selected from hydrogen or lower alkyl
- J is a monovalent or polyvalent radical selected from hydrocarbyl, substituted hydrocarbyl, heteroatom-containing hydrocarbyl, substituted heteroatom-containing hydrocarbyl, hydrocarbylene, substituted hydrocarbylene, heteroatom- containing hydrocarbylene, substituted heteroatom-containing hydrocarbylene, polysiloxane, polysiloxane-polyurethane block copolymer, and combinations of two or more thereof, optionally containing one or more linkers selected from a covalent bond, -0-, -S-, -NR-, -O-C(O)-, -C ⁇ C(0)-C ⁇ , -0-C(0)-NR-, -NR-C(O)-, -NR-C(0)-O-, -NR-C(0)-NR-, -S-C(O)-, -S-C(0)-0-, -S-C(0)-NR-, -S(O)-, -S(0) 2 -, -0-S(0) 2 -,
- linkers to form the J" appendage of a malei ide, nadimide or itaconimide group
- linkers can be produced, such as, for example, oxyalkyl, thioalkyl, aminoalkyl, carboxylalkyl, oxyalkenyl, thioalkenyl, aminoalkenyl, carboxyalkenyl, oxyalkynyl, thioalkynyl, aminoalkynyl, carboxyalkynyl, oxycycloalkyl, thiocycloalkyl, aminocycloalkyl, carboxycycloalkyl, oxycloalkenyl, thiocycloalkenyl, aminocycloalkenyl, carboxycycloalkenyl, heterocyclic, oxyheterocyclic, thioheter
- each Ar is a monosubstituted, disubstituted or trisubstituted aromatic or heteroaromatic ring having in the range of 3 up to 10 carbon atoms, and
- Z is: saturated straight chain alkylene or branched chain alkylene, optionally containing saturated cyclic moieties as substituents on the alkylene chain or as part of the backbone of the alkylene chain, or polyalkylene oxides having the structure:
- each R is independently hydrogen,- alkyl or substituted alkyl, r and s are each defined as above, and
- q falls in the range of 1 up to 50;
- each R is independently hydrogen, alkyl or substituted alkyl
- u falls in the range of 2 up to 10, ' and
- Ar is as defined above;
- E is -0- or -NR 5 -, where R 5 is hydrogen or lower alkyl
- W is straight or branched chain alkyl, alkylene, oxyalkylene, alkenyl, alkenylene, oxyalkenylene, ester, or polyester, a siloxane having the structure - (C (R 3 ) 2 ) d ⁇ [Si (R 4 ) 2 -0] f - Si (R 4 ) 2 - (C (R 3 ) 2 ) e -, - (C (R 3 ) 2 ) d-C (R 3 ) -C (0) 0- (C (R 3 ) 2 ) d - [Si (R 4 ) 2 -0] f - Si(R 4 ) 2 -(C(R 3 ) 2 )e-0(0)C-(C(R 3 ) 2 ) ⁇ -, or - (C ⁇ R 3 ) 2 ) d -C (R 3 ) -0 (0) C- (C (R 3 ) 2 ) d -
- each R 6 is independently hydrogen or lower alkyl
- each R 7 is independently an alkyl, aryl, or arylalkyl group having 1 to 18 carbon atoms
- each R 8 is an alkyl or alkyloxy chain having up to about 100 atoms in the chain, optionally substituted with Ar,
- the maleimide-, nadimide-, and itaconimide-containing compounds useful as the solid curable component are chosen of course such that they are in the solid state and have a melting point between 90 °C and 160 °C.
- maleimides compounds for use as the solid component of the b-stageable die attach adhesive of the present invention include, for example, maleimides having the following structures:
- liquid curable component epoxies, episulfides, maleimides, nadimides, itaconimides, (meth) acrylates, maleates, fumarates, vinyl ethers, vinyl esters, allyl amides, styrene and derivatives thereof, poly (alkenylene) s, norbornenyls, thiolenes and the like are particularly desirable.
- the epoxies in the liquid state that may be used herein include those also available commercially from Resolution Performance under the EPON tradename, such as EPON 825, EPON 826, EPON 828, EPON 862, EPON 8019, EPON 8101, EPON 8112, EPON 813, EPON 8131, EPON 8132, EPON 8133, EPON 815C, and EPON 824.
- the functional group of the maleimide-, nadimide- and/or itaconimide-containing compound, respectively, is attached to a monovalent radical, J, or separated by a polyvalent radical, J, each of the monovalent radical or the polyvalent radical having sufficient length and branching to render the maleimide-, nadimide- and/or itaconimide-containing compound a liquid, such a compound is suitable for use as the liquid curable component.
- each R is independently hydrogen or lower alkyl
- -J- comprises a branched chain alkyl, alkylene or alkylene oxide species having sufficient length and branching to render the maleimide, nadimide and/or itaconimide compound a liquid
- m is 1, 2 or 3.
- the maleimide-, nadimide- or itaconimide-containing compound useful as the liquid component of the present invention may be chosen from those described and claimed in U.S. Patent Nos. 5,789,757 (Husson), 6,034,194 (Dershem), 6,034,195 (Dershem) and 6,187,886 (Husson), the disclosures of each of which are hereby incorporated herein by reference, and those described by U.S. Patent Nos. 6,063,828 (Ma), 6,265,530 (Herr) , 6,281,314 (Tong) and 6,316,566 (Ma), the disclosures of each of which are hereby incorporated herein by reference, as well.
- the (meth) acrylates may be chosen from a host of different compounds.
- the terms (meth) acrylic and (meth) acrylate are used synonymously with regard to the monomer and monomer-containing component.
- the terms (meth) acrylic and (meth) acrylate include acrylic, methacrylic, acrylate and methacrylate.
- the (meth) acrylate component may comprise one or more members selected from a monomer represented by the formula:
- G is hydrogen, halogen, or an alkyl having from 1 to 4 carbon atoms
- R 1 has from 1 to 16 carbon atoms and is an alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkaryl, aralkyl, or aryl group, optionally substituted or interrupted with silane, silicon, oxygen, halogen, carbonyl, hydroxyl, ester, carboxylic acid, urea, urethane, carbamate, amine, amide, sulfur, sulfonate, or sulfone; urethane acrylates or ureide acrylates represented by the formula:
- G is hydrogen, halogen, or an alkyl having from 1 to 4 carbon atoms
- R 8 denotes a divalent aliphatic, cycloaliphatic, aromatic, or araliphatic group, bound through a carbon atom or carbon atoms thereof indicated at the -0- atom and -X- atom or group;
- X is -0-, -NH-, or -N (alkyl)-, in which the alkyl radical has from 1 to 8 carbon atoms; z is 2 to 6; and R 9 is a z-valent cycloaliphatic, aromatic, or araliphatic group bound through a carbon atom or carbon atoms thereof to the one or more NH groups; and a di- or tri- (meth) acrylate selected from polyethylene glycol di (meth) acrylates, bisphenol-A di (meth) acrylates, tetrahydrofurane di (meth) acrylates, hexanediol di (meth) acrylate, trimethylol propane tri (meth) acrylate, or combinations thereof.
- Suitable polymerizable (meth) acrylate monomers include triethylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, 1, 4-butanediol di (meth) acrylate, 1, 6-hexanediol di (meth) acrylate, pentae ' rythritol tetra (meth) acrylate, trimethylol propane tri (meth) acrylate, di-pentaerythritol monohydroxypenta (meth) acrylate, pentaerythritol tri (meth) acrylate, bisphenol-A-ethoxylate di (meth) acrylate, trimethylolpropane ethoxylate tri (meth) acrylate, trimethylolpropane propoxylate tri (meth) acrylate, and bis
- mono-functional (meth) acrylate monomers may be used, including tetrahydrofurane (meth) acrylates and di (meth) acrylates, citronellyl (meth) acrylate, hydroxypropyl (meth) acrylate, tetrahydrodicyclopentadienyl (meth) acrylate, triethylene glycol (meth) acrylate, triethylene glycol (meth) acrylate, and combinations thereof.
- (meth) acrylated silicones may also be used, provided the silicone backbone is not so large so as to minimize the effect of (meth) acrylate when cure occurs.
- the maleates include those comprising the following general structure:
- R for each of the fumarates and maleates may be selected from R 1 as defined above.
- the vinyl ethers and vinyl esters include those comprising the following general structure:
- each R is independently as defined above for R 1
- each Q is independently selected from -0-, -0(0) C-, -C(O)- or -C(0)-0-
- Y is defined as X with respect to structures I, II and III above.
- Examples of vinyl ethers or vinyl esters embraced by the above generic structure include stearyl vinyl ether, behenyl vinyl ether or ester, eicosyl vinyl ether or ester, isoeicosyl vinyl ether or ester, isotetracosyl vinyl ether or ester, poly (tetrahydrofuran) divinyl ether or ester, tetraethylene glycol divinyl ether or ester, tris-2, 4, 6- (1-vinyloxybutane- 4-oxy-l, 3, 5-triazine, bis-1, 3- (l-vinyloxybutane-4-) -oxycarbonyl- benzene (alternately referred to as bis (4-vinyloxybutyl) isophthalate; available from Allied-Signal Inc., Morristown, NJ, under the trade name VECTOMER 4010), divinyl ethers prepared by transvinylation between lower vinyl ethers and higher molecular weight di-alcohols.
- divinyl resins include stearyl vinyl ether or ester, behenyl vinyl ether or ester, eicosyl vinyl ether or ester, isoeicosyl vinyl ether or ester, poly (tetrahydrofuran) divinyl ether or ester, divinyl ethers prepared by transvinylation between lower vinyl ' ethers and higher molecular weight di-alcohols.
- allyl amides a variety of compounds may be chosen, such as those satisfying the criteria set forth above for "J" with respect to the maleimides, itaconimides and/or nadimides. For instance, in a more specific representation, those corresponding to the following structure:
- R' is hydrogen, Ci up to about Cis alkyl or oxyalkyl, allyl, aryl, or substituted aryl, m is 1-6, and
- styrene-containing component include those comprising the following general structure:
- n 1-6, attached to X as defined above.
- the norbornenyl component include those comprising the following general structure:
- the thiolene component include those comprising the following general structure:
- the first temperature at which the solid component is curable should be greater than or equal to the temperature (or temperature range) at which the solid component melts — i.e., changes from the solid state to the liquid state. Ordinarily, this temperature should be within the range of about 100°C to about 300°C, though desirably the temperature is above about 100°C. These different temperature ranges provides the formulator with a wide array of possibilities when preparing a composition within the scope of this invention, particularly where a particular set of physical property parameters are desirable or specified.
- a heat cure catalyst may be included in the composition to reduce the temperature at which cure occurs or hasten the degree of cure when the appropriate temperature condition is selected for cure to occur.
- the heat cure catalyst may be chosen from free radical catalysts, anionic curatives, cationic curatives, and combinations thereof.
- the free radical catalyst may be chosen from peroxides, azo compounds, and combinations thereof.
- Particularly desirable peroxide catalysts include dicumyl peroxide, dibenzoyl peroxide, 2-butanone peroxide, tert- butyl perbenzoate, di-tert-butyl peroxide, 2, 5-bis (tert- butylperoxy) -2, 5-dimethylhexane, bis (tert-butyl peroxyisopropyl) benzene, and tert-butyl hydroperoxide, and azo compounds include 2, 2 ' -azobis (2-methylpropanenitrile) , 2,2'- azobis (2-methylbutanenitrile) , and 1,1'- azobis (cyclohexanecarbonitrile) .
- free radical catalysts include those promoted by Akzo Nobel, such as the following peroxides dl-isobutyryl peroxide (CAS No. 3437-84-1) , cumyl peroxyneodecanoate (CAS No. 26748-47-0), peroxydicarbonate mixture (CAS No. 105-64-6; 19910-65-7; 78350-78-4), 2,4,2- trimethylpentyl-2 peroxyneodecanoate (CAS No. 51240-95-0), cumyl peroxyneoheptanoate (CAS No. 68299-16-1), di-sec-butyl peroxydicarbonate (CAS No.
- tert- butylperoxyneodecanoate (CAS No. 26748-41-4) , dibutyl peroxydicarbonate (CAS No. 16215-49-9), dicetyl peroxydicarbonate (CAS No. 26332-14-5), di(4-tert- butylcyclohexyl) peroxydicarbonate (CAS No. 15520-11-3), di(2- ethylhexyl) peroxydicarbonate (CAS No. 16111-62-9), dimyristyl peroxydicarbonate (CAS No. 53220-22-7), tert-butyl peroxyneoheptanoate (CAS No. 26748-38-9), tert-amyl peroxypivalate (CAS No. 29240-17-3), tert-butyl peroxypivalate
- tert-butyl peroxy 2- ethylhexyl carbonate (CAS No. 34443-12-4), tert-amyl peroxybenzoate (CAS No. 4511-39-1), tert-butyl peroxyacetate (CAS No. 107-71-1), butyl 4, -di- (tert-butylperoxy) valerate (CAS No. 995-33-5), tert-butyl peroxybenzoate (CAS No. 614-45-9), di- tert-amyl peroxide (CAS No. 10508-09-5), dicumyl peroxide (CAS No.
- di- (tert-butylperoxyisopropyl) benzene (CAS No. 25155-25-3), 2, 5-dimethyl-2, 5-di (tert-butylperoxy) hexane (CAS No. 78-63-7), tert-butyl cumyl peroxide (CAS No. 3457-61-2), 2,5-dimethyl-2,5-di(tertbutylperoxy)hexyne-3 (CAS No. 1068-27- 5), di-tert-butyl peroxide (CAS No. 110-05-4), 3, 6, 9-triethyl- 3,6,9-trimethyl-l,4,7-triperoxonane (CAS No.
- the heat cure catalyst may also be an anionic curative, such as those broadly described as aza compounds, amine compounds, amide compounds, imidazole compounds, and combinations thereof. More specific examples of aza compounds include
- amine compounds include aliphatic polyamines, aromatic polyamines, alicyclic polyamines, such as diethylenetriamine, triethylenetetraamine, diethylaminopropylamine, benzyl dimethylamine, m-xylenediamine, diaminodiphenylamine, quinoxaline, isophoronediamine, menthenediamine and combinations thereof.
- a more specific example of an amide compound is the functionalized amide, dicyandiamide .
- imidazole More specific examples include isoimidazole, imidazole, 2-ethyl-4-methylimidazole, 2,4- dimethylimidazole, butylimidazole, 2-heptadecenyl-4- methylimidazole, 2-methylimidazole, 2-undecenylimidazole, 1- vinyl-2-methylimidazole, 2-undecylimidazole, 2- • heptadecylimidazole, 2-phenylimidazole, l-benzyl-2- methylimidazole, l-propyl-2-methylimidazole, l-cyanoethyl-2- methylimidazole, l-cyanoethyl-2-ethyl-4-methylimidazole, 1- cyanoethyl-2-undecylimidazole, l-cyanoethyl-2-phenylimidazole, l-
- the heat cure catalyst may also be a cationic curative, such as those broadly described as organic acids, anhydrides, and Lewis acids.
- the organic acids include phenols, thiophenols, thiols, carboxylic acids, and combinations thereof.
- the anhydrides include among others hexahydrophthalic anhydride, methyl hexahydrophthalic anhydride, 5- (2, 5-dioxotetrahydrol) -3- methyl-3-cyclohexene-l, 2-dicarboxylic anhydride, and combinations thereof.
- the Lewis acids include a variety of materials known in the art as Lewis acids, examples of which are phosphines, alkyl halides, phosphorous esters, boron trifluoride etherate and the like.
- the liquid component is either heat curable at a second temperature, different from the first temperature, or curable upon exposure to radiation in the electromagnetic spectrum.
- the second temperature oftentimes is within the range of about 50°C to about 150°C, though desirably the temperature is less than about 100°C.
- another heat cure catalyst may be included in the composition to reduce the temperature at which cure of the liquid component occurs or hasten the degree of cure of the liquid component when the appropriate temperature condition is selected for cure to occur.
- Those heat cure catalysts recited above are suitable as the another heat cure catalyst, provided they catalyze reaction of or react with the liquid component at the indicated temperature.
- a photoinitiator should also be included in the composition.
- the photoinitiator should be chosen with an eye toward the range of radiation in the electromagnetic spectrum at which cure is to be triggered.
- suitable ranges of radiation in the electromagnetic spectrum include UV, UV/VIS, VIS, IR, E-beam, X- ray, and microwave radiation.
- UV and UV/VIS photoinitiators include those available commercially from Ciba Specialty Chemicals, Tarrytown, New York under the "IRGACURE” and “DAROCUR” tradena es, specifically "IRGACURE” 184 (1- , hydroxycyclohexyl phenyl ketone) , 907 (2-methyl-l- [4- (methylthio)phenyl] -2-morpholino propan-1-one) , 369 (2-benzyl-2- N,N-dimethylamino-l- (4-morpholinophenyl) -1-butanone) , 500 (the combination of 1-hydroxy cyclohexyl phenyl ketone and benzophenone) , 651 (2, 2-dimethoxy-2-phenyl acetophenone) , 1700 (the combination of bis (2, 6-dimethoxybenzoyl-2, 4, 4-trimethyl pentyl) phosphine oxide and 2-hydroxy-2-
- photoinitiators useful herein include alkyl pyruvates, such as methyl, ethyl, propyl, and butyl pyruvates, and aryl pyruvates, such as phenyl, benzyl, and appropriately substituted derivatives thereof.
- Photoinitiators particularly well-suited for use herein include ultraviolet photoinitiators, such as 2,2- dimethoxy-2-phenyl acetophenone (e.g. , "IRGACURE” 651), and 2- hydroxy-2-methyl-l-phenyl-l-propane (e.g., "DAROCUR” 1173), bis (2, 4, 6-trimethyl benzoyl) phenyl phosphine oxide (e.g.
- Additional photoinitiators may be chosen from those available from Sartomer, Inc., Exton, Pennsylvania under the tradenames "ESACURE” and “SARCAT”. Examples include “ESACURE” KB1 (benzil dimethyl ketal) , “ESACURE” EB3 (mixture of benzoin and butyl ethers), “ESACURE” TZT (trimethylbenzophenone blend), “ESACURE” KIP100F (hydroxy ketone) , “ESACURE” KIP150 (polymeric hydroxy ketone) , “ESACURE” KT37 (blend of “ESACURE” TZT and KIP150), “ESACURE” KT046 (blend of triphenyl phosphine oxide, "ESACURE” KIP150 and TZT) , and “ESACURE” X33 (blend of 2- and 4- isopropylthioxanthone, ethyl 4- (dimethyl amino) benzoate and "ESACURE”
- the photoinitiator may be a cationic one, which is capable of catalyzing the polymerization of the liquid component of the inventive compositions, upon exposure to appropriate radiation conditions.
- Desirable cationic photoinitiators for use with the present invention include triarylsulfonium and diaryliodonium salts containing non- nucleophilic counterions and aryl diazonium salts, examples of which include 4-methoxybenzenediazonium hexafluorophosphate, benzenediazonium tetrafluoroborate, diphenyl iodonium chloride, diphenyl iodonium hexafluorophosphate, 4, -dioctyloxydiphenyl iodonium hexafluorophosphate, triphenylsulfonium tetrafluoroborate, diphenyltolylsulfonium hexafluorophosphate, phenylditolyl
- the b-stageable heat curable composition may further include in the range of about 20 up to 90 wt % filler, based on the total weight of the composition.
- Fillers contemplated for use in the practice of the present invention may optionally be conductive (electrically and/or thermally) .
- Electrically conductive fillers contemplated for use in the practice of the present invention include, for example, silver, nickel, gold, cobalt, copper, aluminum, graphite, silver-coated graphite, nickel-coated graphite, alloys of such metals, and the like, as well as mixtures thereof. Both powder and flake forms of filler may be- used herein. in flake form, the filler may have a thickness of less than about 2 microns, with planar dimensions of about 20 to about 25 microns.
- Flake employed herein may have a surface area of about 0.15 to 5.0 m 2 /g and a tap density of about 0.4 up to about 5.5 g/cc.
- the filler particles may have a diameter of about 0.5 to 30 microns, . such as about 20 microns.
- Thermally conductive fillers contemplated for use in the practice of the present invention include, for example, aluminum nitride, boron nitride, silicon carbide, diamond, graphite, beryllium oxide, magnesia, silica, alumina, and the like.
- Electrically and/or thermally conductive fillers should be rendered substantially free of catalytically active metal ions by treatment with chelating agents, reducing agents, nonionic lubricating agents, or mixtures of such agents. Such treatment is described in U.S. Patent No. 5,447,988, which is expressly incorporated by reference herein in its entirety.
- a filler may be used in addition to or as an alternative to the conductive filler, that is neither electrically nor thermally conductive.
- Such fillers may be desirable to impart some other phusical property to the formulation such as, for example, reduced thermal expansion of the cured composition, reduced dielectric constant, improved toughness, increased hydrophobicity, and the like.
- the b-stageable heat curable composition may be preapplied either (a) onto at least a portion of the opposed surface of the circuit chip or (b) onto at least a portion of bond pad of the substrate, at any thickness or amount which can achieve sufficient adhesion between the chip die and the substrate and which provides for appropriate properties therebetween during use of the thus integrated assembly.
- the composition may be substantially free of non- reactive solvent or diluent, or depending on the constituents used may include a non-reactive solvent or diluent.
- a diluent When a diluent is added, it is desirable for the diluent to be a reactive diluent which, in combination with the maleimide- containing compound, forms a thermosetting resin composition.
- reactive diluents include acrylates and methacrylates of monofunctional and polyfunctional alcohols, vinyl compounds as described in greater detail herein, styrenic monomers (i.e., ethers derived from the reaction of vinyl benzyl chlorides with mono-, di-, or trifunctional hydroxy compounds), and the like.
- Exemplary coupling agents contemplated for use in the practice of the present invention include silicate esters, metal acrylate salts (e.g., aluminum methacrylate) , titanates (e.g., titanium methacryloxyethylacetoacetate triisopropoxide) , or compounds that contain a copolymerizable group and a chelating ligand (e.g., phosphine, mercaptan, acetoacetate, and the like).
- a chelating ligand e.g., phosphine, mercaptan, acetoacetate, and the like.
- Certain desirable coupling agents contain both a co-polymerizable function (e.g., vinyl moiety, acrylate moiety, methacrylate moiety, styrene moiety, cyclopentadiene moiety, and the like) , as well as a silicate ester function.
- the silicate ester portion of the coupling agent is capable of condensing with metal hydroxides present on the mineral surface of the substrate, while the co-polymerizable function is capable of •co-polymerizing with the other reactive components of invention adhesive composition.
- An example of such a coupling agent is an oligomeric silicate coupling agent, such as poly (methoxyvinylsiloxane) .
- Free-radically polymerizable groups, A include optionally substituted maleimides, optionally substituted vinyl ethers, optionally substituted vinyl thioether, optionally substituted vinyl esters, optionally substituted fumarates, optionally substituted vinyl thioester, optionally substituted diallyl amides, optionally substituted styrene functional groups, optionally substituted polybutadienyl, and the like.
- These functional groups can co-cure by a free-radical mechanism with bismaleimide or acrylate resin systems when catalyzed by a small amount of free-radical inhibitor.
- such functional groups can also co-cure with maleimide or acrylate resin systems without using a free radical initiator if the system is exposed to elevated cure temperatures, UV radiation, or the like.
- inventive b-stageable heat curable composition may further contain other additives, such as defoaming agents, leveling agents, dyes, and pigments.
- circuit assembly 50 includes a semiconductor chip with the die attach adhesive preapplied onto the die backside 60, and a carrier substrate such as circuit board substrate 70.
- Circuit chip 60 includes a chip die 62.
- Chip die 62 may be constructed of any material known in the art.
- chip die 62 may be constructed of silicon, germanium, or the like.
- Chip die 62 may also be coated with a passivation material, which is capable inhibiting environmental corrosion, such as a polyimide-, poly-benzocyclobutane-, or silicone nitride-based material.
- Substrate 70 may also be constructed of any material known in the art.
- substrate ' 70 may be constructed from ceramic substrates including A1 2 0 3 , silicon nitride (SiN 3 ) , and mullite (Al 2 0 3 -Si0 2 ) ; substrates or tapes of heat-resistant resins, such as polyi ides; substrates of glass-reinforced epoxy; substrates of acrylonitrile-butadiene-styrene (ABS) ; and phenolic substrates, substrates made metallic materials such Cu, Alloy 42, and the like with various surface finishes such as spot Ag plating, Pd, flash Au and the like.
- Substrate 70 includes circuitry on a substrate surface 74, including a plurality of electrical bond pads 76.
- Chip die 62 includes opposing first and second surfaces, including chip surface 64 as a first surface and attach surface 68 as a second surface.
- Circuitry is provided on chip surface 64, including a plurality of electrical contact pads, such as metallized bond pads 66, which are arranged in a predetermined pattern. These electrical contact pads are connectable to the bond pads 76 of the substrate 70.
- the electrical interconnection and engagement between the circuitry on chip die 62 and the circuitry on substrate 70 is provided by way of bonds between each of contact pads 66 on chip die 62 and contact pads 76 of substrate 70, established such as by wire(s) 80.
- chip die 62 includes metallized electrical contacts, in the form of contact pads 66 on chip surface 64, and includes b-stageable die attach adhesive 90 preapplied on the opposing attach surface 68 prior to assembly of chip die 62 with substrate 70.
- B-stageable die attach material 90 provides circuit assembly 50, after exposure to appropriate curing conditions, with high adhesive strength for adhering chip die 62 to substrate 70. Ordinarily, such adherence occurs by forming a fully cured material in a solid form for attaching and adhering chip die 62 to substrate 70, through exposure to elevated temperature conditions sufficient to promote b-stage curing of the b-stageable die attach adhesive 90.
- the present invention further provides circuit assembly 50 in an assembled form, as depicted in FIG. 2, in which chip die 62 has been mated with substrate 70, and exposed to appropriate conditions to cause the b-stageable die attach adhesive 90 to attach and adhere chip die 62 to substrate 70. Also, chip die 62 can then be electrically interconnected with substrate 70 through an electrical interconnection established between contact pads 66 and contact pads 76, such as by soldering or otherwise bonding wires 80 therebetween.
- the present invention thus provides, in one embodiment, an article of manufacture in the form of a chip die having a first surface capable of providing electrical engagement with another chip die or a carrier substrate to which it is intended to be electrically interconnected, and a second surface, opposed from the first, and having a b-stageable die attach adhesive disposed on at least a portion thereof.
- Providing the b-stageable die attach adhesive directly onto a surface of the chip die eliminates production issues with dispensing volumes and temperatures, and storage, handling and shelf life issues, as well that are often considered with flowable or liquid die attach adhesives. That is, the end user no longer needs to use sophisticated dispensing equipment and low temperature storage containers for application of such materials.
- a semiconductor chip preapplied with a b-stageable die attach adhesive also enables the end user to implement tighter package design specifications. That is, because of reduced flowout and bleed from such b-stageable die attach adhesive as contrasted to many known die attach adhesives, tighter tolerances between die edge and bond may be realized.
- semiconductor - chips may now be stacked, such that the overall size of the semiconductor device may be reduced, or at least remain substantially the same in the length and width directions, yet the performance capabilities of the stacked semiconductor chips may be increased dramatically. See e.g. U.S. Patent Nos. 5,323,060, 5,286,679, 5,140,404, and 6,465,893, the disclosures of each of which hereby expressly incorporated herein by reference.
- the inventive b-stageable die attach adhesives may be applied by stencil printing, screen printing or spray coating.
- the wafers can be uniformly coated with the inventive die attach adhesives and thereafter cured. During wafer dicing, the dicing saw then cuts completely through the cured die attach adhesive layer and the wafer.
- the stencil or screen is made with apertures designed to partially coat the individual die or semiconductor chips. Specifically, the webbing of the stencil or screen is used to maintain the inventive die attach adhesive in place.
- the width of the webbing or conversely, the dimensions of the aperture, are designed so that after die placement, the target wet bondline may be achieved and the die attach adhesive may form fillets of the desired height beneath the die.
- the stencil or screen is made with apertures designed to partially coat the die pad.
- the webbing of the screen or stencil is used to maintain in place the die -attach adhesive after die placement.
- the width of the webbing, or conversely, the dimensions of the aperture, are designed so that after die placement, the target wet bondline may be achieved and the die attach adhesive may form fillets of the desired height beneath the die with minimal to no wetting by the die attach adhesive of the electrically conductive interconnects .
- a "zero gap bondline" may be achieved with the inventive die attach adhesive.
- the laminate may first manufactured without a solder mask layer over the die pad.
- the die pad area is lower in height relative to the non- die pad areas by a depth equal to the thickness of the solder mask layer, which is typically around 1 mil.
- These recessed die pads are then filled with the die attach adhesive, using stencil printing, screen printing or spray coating.
- an amount of the inventive b-stageable die attach adhesive is applied until the surface of the applied adhesive is flush with the solder mask layer.
- the recessed die pad is not completely filled in with the die attach adhesive; rather, an amount of the die attach adhesive is used such that after die placement, the die attach adhesive has flowed underneath the die to cover the previously exposed die pad bottom.
- inventive b-stageable die attach adhesive adhesive may be used as a replacement for solder mask, whether inside or outside the diepad area, or both.
- thin semiconductor wafers are desirable substrates on which to coat the die attach adhesive. These thin semiconductor wafers have typical thickness of about 2-3 mil. Although mechanically robust once properly supported, i.e., bonded onto flexible subtrates and encapsulated or overmolded, in their unsupported form thin dice derived from these wafers are fragile and break rather easily.
- the adhesive may then be dried to remove solvent, if present, or cooled to solidify the adhesive, if applied under mildly elevated temperature conditions .
- a typical drying time may be about 30 minutes at a temperature of about 100°C, though any temperature below the cure onset of the curable componenets of the b-stageable die attach adhesive may be chosen.
- the length of time may vary depending on the time required for the surface of the die attach adhesive to become tack free at the chosen temperature.
- die bonding may occur.
- Conditions suitable for curing the b-stageable die attach adhesive include subjecting the inventive adhesive to a temperature of at least about 175°C but less than about 300°C for about 0.5 up to about 2 minutes.
- a typical die bonding setting is a time of about 10 seconds at a temperature of about 100°C using 500 cN spread, in the case of a 7.6 mm x 7.6 mm die.
- This rapid, short duration heating can be accomplished in a variety of ways, e.g., with in-line snap cure stations such as those manufactured by Nihon Sanso, a heated stage mounted on the diebonder, or an IR beam provided by an EFOS Novacure IR unit.
- in-line snap cure stations such as those manufactured by Nihon Sanso
- a heated stage mounted on the diebonder or an IR beam provided by an EFOS Novacure IR unit.
- chip die 62 as discussed herein may be provided as an individual chip die, or may be provided as a chip scale package, such as depicted as 160 in FIG. 3. Accordingly, in FIG. 3, a circuit assembly 150 is provided including a chip scale package 160. Chip scale packages are known in the art for use in electrical connections of circuits with circuit board substrates.
- circuit assembly 150 includes a structure similar to that shown in the embodiment depicted in FIG. 2, except that chip die 62 is replaced with chip scale package 160.
- circuit assembly 150 includes a circuit board substrate 70 including contact pads 76 thereon.
- Substrate 70 is attached to chip scale package 160, which may include, for example, a chip die attached to a separate carrier substrate or an interposer layer, as is known in the art.
- chip scale package 160 may include, for example, a chip die attached to a separate carrier substrate or an interposer layer, as is known in the art.
- contact pads 66 and/or wires 80 may be provided on such a separate carrier substrate or on the interposer layer, in a similar manner as set forth with respect to circuit chip 60 in the previous description.
- chip scale package 160 is attached to substrate 70 in a similar manner as with the previous description, through die attach material 90.
- FIG. 4 depicts a cross sectional view of two dies stacked in a stacked die assembly 350 includes a semiconductor chip in the form of preapplied die attach circuit chip 360 (having chip die 62 and inventive b-stageable die attach adhesive 90 disposed thereon) , and an other chip die 62A, to which preapplied die attach circuit chip 360 will be attached.
- preapplied die attach circuit chip 360 having chip die 62 and inventive b-stageable die attach adhesive 90 disposed thereon
- Circuit chip 360 includes a chip die 62, as above with reference to FIG. 1.
- the other chip die 62A may be constructed of any material known in the art, and may be constructed from the same of different materials.
- the other chip die 62A includes opposing first and second surfaces, including chip surface 64A as a first surface which is the attach surface for chip die 62. Electrical contact pads, such as metallized contact pads 66A, which are arranged in a predetermined pattern, are connectable to the contact pads of a substrate or another chip die (neither of which shown) .
- the electrical interconnection and engagement between the circuitry on chip die 62 and the circuitry on the other chip die 62A is provided by way of bonds between each of contact pads 66 on chip die 62 and contact pads 66A of the other chip die 62A, established such as by wire(s) 80.
- Electrical interconnection can be established by bonding wire 80 to contact pads 66A before or, more preferably, after curing of the b-stageable die attach adhesive. Alternatively, electrical interconnection can be established by bonding wire 80 to contact pads ditrectly on the substrate 70.
- a b-stageable die attach adhesive was prepared using the components listed below in the noted amounts.
- the maleimides were prepared according to the procedure set forth in U.S. Patent No. 5,973,166, the disclosure of which is hereby expressly incorporated herein by reference.
- the b-stageable die attach adhesive was mixed thoroughly after the addition of each component at room temperature, dispensed onto a glass slide, and heated to a temperature of 90°C for 10 minutes, followed by heating to a temperature of 125°C for 1 minute.
- the b-staged die attach adhesive was heated to a temperature of 125°C to 130°C for less than 60 seconds, and silicon die was placed thereover. The silicon die was then attached to the glass slide by heating at a temperature of 150°C for a period of time of 1 hour.
- the b-staged die attach adhesive was then evaluated for room temperature die shear and hot die shear on a calibrated Dage 4000 die shear tester.
- the room temperature die shear was observed to be greater than 100 Kg-f, and the hot die shear was observed to be 45 +/- 19.
- a b-stageable die attach adhesive was prepared using the components listed below in the noted amounts .
- the maleimides were prepared according to the procedure set forth in U . S . ' Patent No . 5, 973, 166.
- X-BMI the 1, 20-bismaleimi o derivative of 10, 11-dioctyl-eicosane
- Beta-3, 4-epoxycyclohexyl) ethyltrimethoxy silane Di (4-t-butylcycohexyl) eroxydicarbonate .
- the b-stageable die attach adhesive was mixed thoroughly after the addition of each component at room temperature, dispensed onto a glass slide, and heated to a temperature of 90°C for 10 minutes, followed by heating to a temperature of 125°C for 1 minute.
- the b-staged die attach adhesive was heated to a temperature of 125°C to 130°C for less than 60 seconds, and silicon die was placed thereover. The silicon die was then attached to the glass slide by heating at a temperature of 150°C for a period of time of 1 hour.
- the b-staged die attach adhesive was then evaluated for room temperature die shear and hot die shear on a calibrated Dage 4000 die shear tester.
- the room temperature die shear was observed to be greater than 100 Kg-f, and the hot die shear was observed to be 63 +/- 23.
- a silver-filled b-stageable die attach adhesive was prepared using the components listed below in the noted amounts.
- the maleimides were prepared according to the procedure set forth in U.S. Patent No. 5,973,166.
- the b-stageable die attach adhesive was mixed thoroughly after the addition of each component at room temperature, dispensed onto a glass slide, and heated to a temperature of 90°C for 10 minutes, followed by heating to a temperature of i25°C for 1 minute.
- the b-staged die attach adhesive was heated to a temperature of 125°C to 130°C for less than 60 seconds, and a silicon die was placed thereover. The silicon die was then attached to the glass slide by heating at a temperature of 150°C for a period of time of 1 hour.
- the b-staged die attach adhesive was then evaluated for room temperature die shear and hot die shear on a calibrated Dage 4000 die shear tester.
- the room temperature die shear was observed to be greater than 100 Kg-f, and the hot die shear was observed to be 51 +/- 13.
- Another silver-filled b-stageable die attach adhesive was prepared using the components listed below in the noted amounts . Again as in example 1, the maleimides were prepared according to the procedure set forth in U . S . Patent No . 5, 973, 166.
- the b-stageable die attach adhesive was mixed thoroughly after the addition of each component at room temperature, and determined to have a 1 rpm viscosity of 349,000 cps .
- the b-stageable die attach adhesive was dispensed onto a glass slide, and heated to a temperature of 125°C for 5 minutes.
- the b-staged die attach adhesive was heated to a temperature of 175°C for one hour. At this point, the cured die attach adhesive was allowed to cool to room temperature, and its volume resistivity was determined to be 0.00023 ohms-cm.
- the b-stageable die attach adhesive was screen printed onto a ceramic substrate, and heated to a temperature of 125°C for 5 minutes.
- the b-staged die attach adhesive was allowed to cool to room temperature.
- the b-staged die attach adhesive was heated to a temperature of 125°C to allow for the solid component to melt so that a silicon die may be placed thereover.
- the assembly was bonded together by heating at a temperature of 175°C for a period of time of one hour.
- the b-staged die attach adhesive was then evaluated for hot die shear at 275°C on a calibrated Dage 4000 die shear tester. The hot die shear was observed to be 46 +/- about 10.
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Dental Preparations (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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EP20030786906 EP1565536B1 (en) | 2002-11-25 | 2003-11-20 | B-stageable die attach adhesives |
DE60335821T DE60335821D1 (en) | 2002-11-25 | 2003-11-20 | B-STATE ADHESIVE FOR CHIP COVERING |
AU2003295705A AU2003295705A1 (en) | 2002-11-25 | 2003-11-20 | B-stageable die attach adhesives |
AT03786906T ATE496104T1 (en) | 2002-11-25 | 2003-11-20 | B CONDITION ADHESIVE FOR CHIP BONDING |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US42872402P | 2002-11-25 | 2002-11-25 | |
US60/428,724 | 2002-11-25 | ||
US10/459,601 | 2003-06-12 | ||
US10/459,601 US7176044B2 (en) | 2002-11-25 | 2003-06-12 | B-stageable die attach adhesives |
Publications (1)
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WO2004048491A1 true WO2004048491A1 (en) | 2004-06-10 |
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PCT/US2003/037109 WO2004048491A1 (en) | 2002-11-25 | 2003-11-20 | B-stageable die attach adhesives |
Country Status (8)
Country | Link |
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US (2) | US7176044B2 (en) |
EP (1) | EP1565536B1 (en) |
KR (1) | KR101069047B1 (en) |
AT (1) | ATE496104T1 (en) |
AU (1) | AU2003295705A1 (en) |
DE (1) | DE60335821D1 (en) |
TW (1) | TWI295312B (en) |
WO (1) | WO2004048491A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009129136A2 (en) * | 2008-04-16 | 2009-10-22 | Henkel Corporation | Flow controllable b-stageable composition |
EP2608231A1 (en) | 2011-12-21 | 2013-06-26 | Henkel AG & Co. KGaA | Electric component |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101164671B1 (en) * | 2002-06-17 | 2012-07-11 | 헨켈 코포레이션 | Interlayer dielectric and pre-applied die attach adhesive materials |
US7884174B2 (en) * | 2003-05-05 | 2011-02-08 | Designer Molecules, Inc. | Imide-linked maleimide and polymaleimide compounds |
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WO2005090510A1 (en) * | 2004-03-19 | 2005-09-29 | Sumitomo Bakelite Company, Ltd. | Resin composition and semiconductor devices made by using the same |
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US7795362B2 (en) * | 2004-07-16 | 2010-09-14 | Designer Molecules, Inc. | Olefin oligomers containing pendant maleimide groups |
WO2006107748A1 (en) * | 2005-04-04 | 2006-10-12 | National Starch And Chemical Investment Holding Corporation | Radiation-curable desiccant-filled adhesive/sealant |
US20080003373A1 (en) * | 2005-05-11 | 2008-01-03 | Yazaki Corporation | Antireflective coating compositions and methods for depositing such coatings |
US8043534B2 (en) * | 2005-10-21 | 2011-10-25 | Designer Molecules, Inc. | Maleimide compositions and methods for use thereof |
US8378017B2 (en) * | 2005-12-29 | 2013-02-19 | Designer Molecules, Inc. | Thermosetting adhesive compositions |
US8530573B2 (en) | 2006-05-10 | 2013-09-10 | Designer Molecules, Inc. | Modified calcium carbonate-filled adhesive compositions and methods for use thereof |
US8287686B2 (en) * | 2006-07-24 | 2012-10-16 | Designer Molecules, Inc. | Derivatives of poly(styrene-co-allyl alcohol) and methods for use thereof |
DE102006042032A1 (en) * | 2006-09-07 | 2008-03-27 | Infineon Technologies Ag | Semiconductor component |
WO2008077141A1 (en) * | 2006-12-19 | 2008-06-26 | Designer Molecules, Inc. | Rubber epoxy curatives and methods for use thereof |
WO2008077140A2 (en) * | 2006-12-19 | 2008-06-26 | Designer Molecules, Inc. | Hydrolytically resistant thermoset monomers |
US7422707B2 (en) * | 2007-01-10 | 2008-09-09 | National Starch And Chemical Investment Holding Corporation | Highly conductive composition for wafer coating |
WO2008092168A2 (en) * | 2007-01-26 | 2008-07-31 | Designer Molecules, Inc. | Methods for the preparation of imides, maleimides and maleimide-terminated polyimide compounds |
US8039663B2 (en) | 2007-04-09 | 2011-10-18 | Designer Molecules, Inc. | Monomers derived from pentacyclopentadecane dimethanol |
US8431655B2 (en) * | 2007-04-09 | 2013-04-30 | Designer Molecules, Inc. | Curatives for epoxy compositions |
WO2008124797A1 (en) * | 2007-04-09 | 2008-10-16 | Designer Molecules, Inc. | Curatives for epoxy compositions |
US7868113B2 (en) | 2007-04-11 | 2011-01-11 | Designer Molecules, Inc. | Low shrinkage polyester thermosetting resins |
US20100056671A1 (en) * | 2007-04-12 | 2010-03-04 | Designer Molecules, Inc. | Polyfunctional epoxy oligomers |
WO2008130894A1 (en) * | 2007-04-16 | 2008-10-30 | Designer Molecules, Inc. | Low temperature curing acrylate and maleimide based formulations and methods for use thereof |
US7928153B2 (en) | 2007-08-14 | 2011-04-19 | Designer Molecules, Inc. | Thermosetting polyether oligomers, compositions and methods for use thereof |
US8398898B2 (en) * | 2008-02-23 | 2013-03-19 | Designer Molecules, Inc. | Soluble metal salts for use as conductivity promoters |
WO2009117345A2 (en) | 2008-03-17 | 2009-09-24 | Henkel Corporation | Adhesive compositions for use in die attach applications |
WO2009117729A2 (en) | 2008-03-21 | 2009-09-24 | Designer Molecules, Inc. | Anti-bleed compounds, compositions and methods for use thereof |
US8308892B2 (en) | 2008-04-09 | 2012-11-13 | Designer Molecules, Inc. | Di-cinnamyl compounds and methods for use thereof |
US8008419B2 (en) * | 2008-08-13 | 2011-08-30 | Designer Molecules, Inc. | Siloxane monomers and methods for use thereof |
US8158748B2 (en) | 2008-08-13 | 2012-04-17 | Designer Molecules, Inc. | Hetero-functional compounds and methods for use thereof |
US8637611B2 (en) | 2008-08-13 | 2014-01-28 | Designer Molecules, Inc. | Amide-extended crosslinking compounds and methods for use thereof |
US8013104B2 (en) * | 2008-08-13 | 2011-09-06 | Designer Molecules, Inc. | Thermosetting hyperbranched compositions and methods for use thereof |
US8217120B2 (en) * | 2008-08-13 | 2012-07-10 | Designer Molecules, Inc. | Functionalized styrene oligomers and polymers |
US20100052122A1 (en) * | 2008-08-27 | 2010-03-04 | Advanced Semiconductor Engineering, Inc. | Wire bodning package structure |
US8288591B2 (en) * | 2008-11-20 | 2012-10-16 | Designer Molecules, Inc. | Curing agents for epoxy resins |
WO2010068287A2 (en) * | 2008-12-11 | 2010-06-17 | Angion Biomedica Corp. | Small molecule modulators of hepatocyte growth factor (scatter factor) activity |
CN102300950A (en) * | 2009-02-02 | 2011-12-28 | 洛德公司 | Structural adhesives containing maleimide terminated polyimides |
BRPI1012553A2 (en) | 2009-03-31 | 2016-10-18 | Sanofi Aventis Deutschland | A method for manufacturing a drug delivery device body using an adhesive and a drug delivery device body |
US20100252783A1 (en) * | 2009-04-07 | 2010-10-07 | Syh-Tau Yeh | Ambient-curable anisotropic conductive adhesive |
US8415812B2 (en) * | 2009-09-03 | 2013-04-09 | Designer Molecules, Inc. | Materials and methods for stress reduction in semiconductor wafer passivation layers |
US8710682B2 (en) * | 2009-09-03 | 2014-04-29 | Designer Molecules Inc, Inc. | Materials and methods for stress reduction in semiconductor wafer passivation layers |
EP2323047B1 (en) * | 2009-10-09 | 2020-02-19 | Software AG | Primary database system, replication database system and method for replicating data of a primary database system |
US8698320B2 (en) * | 2009-12-07 | 2014-04-15 | Henkel IP & Holding GmbH | Curable resin compositions useful as underfill sealants for use with low-k dielectric-containing semiconductor devices |
WO2011156228A2 (en) | 2010-06-08 | 2011-12-15 | Henkel Corporation | Coating adhesives onto dicing before grinding and micro-fabricated wafers |
TWI456012B (en) * | 2010-06-08 | 2014-10-11 | Henkel IP & Holding GmbH | Wafer backside coating process with pulsed uv light source |
US8686162B2 (en) | 2010-08-25 | 2014-04-01 | Designer Molecules Inc, Inc. | Maleimide-functional monomers in amorphous form |
US8816021B2 (en) | 2010-09-10 | 2014-08-26 | Designer Molecules, Inc. | Curable composition with rubber-like properties |
US20120100379A1 (en) * | 2010-10-20 | 2012-04-26 | Greene, Tweed Of Delaware, Inc. | Fluoroelastomer bonding compositions suitable for high-temperature applications |
JP2014511560A (en) | 2011-02-01 | 2014-05-15 | ヘンケル コーポレイション | Underfill film on dicing tape precut and applied to wafer |
WO2012106191A2 (en) | 2011-02-01 | 2012-08-09 | Henkel Corporation | Pre- cut wafer applied underfill film |
TWI466969B (en) | 2011-04-05 | 2015-01-01 | Henkel IP & Holding GmbH | B-stageable and skip-curable wafer back side coating adhesives |
TWI545702B (en) * | 2012-10-25 | 2016-08-11 | 矽品精密工業股份有限公司 | Semiconductor package and method of forming the same |
US8962389B2 (en) | 2013-05-30 | 2015-02-24 | Freescale Semiconductor, Inc. | Microelectronic packages including patterned die attach material and methods for the fabrication thereof |
TWI651387B (en) | 2013-09-30 | 2019-02-21 | 漢高智慧財產控股公司 | Conductive die attach film for large die semiconductor packages and compositions useful for the preparation thereof |
JP6092752B2 (en) * | 2013-10-30 | 2017-03-08 | 京セラ株式会社 | Wiring board |
KR102243196B1 (en) | 2016-02-19 | 2021-04-22 | 애버리 데니슨 코포레이션 | Two-step method of manufacturing adhesive and related composition |
KR101753158B1 (en) | 2016-04-28 | 2017-08-09 | (주)이녹스첨단소재 | Composition for non-conductive film and non-conductive film including the same |
WO2018081268A1 (en) | 2016-10-25 | 2018-05-03 | Avery Dennison Corporation | Block polymers with photoinitiator groups in backbone and their use in adhesive compositions |
CN106803502A (en) * | 2016-12-29 | 2017-06-06 | 广州凯耀资产管理有限公司 | A kind of integrated circuit package structure |
US11084913B2 (en) * | 2017-10-12 | 2021-08-10 | Texas Research International, Inc. | Anaerobic composite matrix resins |
US20190112438A1 (en) * | 2017-10-12 | 2019-04-18 | Texas Research International, Inc. | Anaerobic composite matrix resins |
US11552040B2 (en) * | 2020-07-21 | 2023-01-10 | Western Digital Technologies, Inc. | Package process, DAF replacement |
CN116313820A (en) * | 2021-12-21 | 2023-06-23 | 先进半导体材料(深圳)有限公司 | Lead frame's chip mounter |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2928446A (en) | 1957-04-05 | 1960-03-15 | Little Inc A | Self-locking screw-threaded fastening member |
US4325985A (en) | 1980-03-31 | 1982-04-20 | The Oakland Corporation | Thread lock |
US4412048A (en) | 1981-09-11 | 1983-10-25 | Westinghouse Electric Corp. | Solventless UV dryable B-stageable epoxy adhesive |
US4632944A (en) | 1981-10-15 | 1986-12-30 | Loctite Corporation | Polymerizable fluid |
US5084532A (en) | 1988-08-10 | 1992-01-28 | Teroson Gmbh | Hot-melt adhesive of epoxy resins and amino groups-containing polyoxypropylene |
US5140404A (en) | 1990-10-24 | 1992-08-18 | Micron Technology, Inc. | Semiconductor device manufactured by a method for attaching a semiconductor die to a leadframe using a thermoplastic covered carrier tape |
JPH05339429A (en) | 1992-06-10 | 1993-12-21 | Japan Synthetic Rubber Co Ltd | Rubber composition |
US5286679A (en) | 1993-03-18 | 1994-02-15 | Micron Technology, Inc. | Method for attaching a semiconductor die to a leadframe using a patterned adhesive layer |
US5300608A (en) | 1992-03-31 | 1994-04-05 | Loctite Corporation | Process for preparing alkoxy-terminated organosiloxane fluids using organo-lithium reagents |
US5323060A (en) | 1993-06-02 | 1994-06-21 | Micron Semiconductor, Inc. | Multichip module having a stacked chip arrangement |
US5447988A (en) | 1993-02-26 | 1995-09-05 | Quantum Materials | Solvent free die-attach compositions |
US5789757A (en) | 1996-09-10 | 1998-08-04 | The Dexter Corporation | Malemide containing formulations and uses therefor |
US5973166A (en) | 1998-03-02 | 1999-10-26 | The Dexter Corporation | Method for the preparation of maleimides |
US6034194A (en) | 1994-09-02 | 2000-03-07 | Quantum Materials/Dexter Corporation | Bismaleimide-divinyl adhesive compositions and uses therefor |
US6211320B1 (en) | 1999-07-28 | 2001-04-03 | Dexter Corporation | Low viscosity acrylate monomers formulations containing same and uses therefor |
US6465893B1 (en) | 1990-09-24 | 2002-10-15 | Tessera, Inc. | Stacked chip assembly |
WO2003052016A2 (en) | 2001-12-14 | 2003-06-26 | National Starch And Chemical Investment Holding Corporation | Dual cure b-stageable adhesive for die attach |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS535920B2 (en) | 1974-06-03 | 1978-03-02 | ||
JPS5339429A (en) | 1976-09-22 | 1978-04-11 | Hitachi Ltd | Inverter |
US4851454A (en) * | 1986-07-17 | 1989-07-25 | The Dow Chemical Company | Photolytically crosslinkable thermally stable composition |
US4816294A (en) * | 1987-05-04 | 1989-03-28 | Midwest Research Institute | Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes |
US4759874A (en) * | 1987-08-03 | 1988-07-26 | The Dow Chemical Company | Benzocyclobutene-based die attach adhesive compositions |
US5015695A (en) * | 1989-05-09 | 1991-05-14 | Shell Oil Company | Functionalized elastomeric polymer production |
JPH0395225A (en) | 1989-09-08 | 1991-04-19 | Fujitsu Ltd | Maleimide resin composition |
US5208188A (en) | 1989-10-02 | 1993-05-04 | Advanced Micro Devices, Inc. | Process for making a multilayer lead frame assembly for an integrated circuit structure and multilayer integrated circuit die package formed by such process |
US5177032A (en) * | 1990-10-24 | 1993-01-05 | Micron Technology, Inc. | Method for attaching a semiconductor die to a leadframe using a thermoplastic covered carrier tape |
US5298562A (en) | 1991-08-19 | 1994-03-29 | Sartomer Company, Inc. | Calcium di(meth)acrylate cured halogenated polyethylene polymers |
DE4130329A1 (en) | 1991-09-12 | 1993-03-18 | Bayer Ag | HEAT-CURABLE REACTION RESIN MIXTURES, A METHOD FOR THE PRODUCTION THEREOF AND THE USE FOR THE PRODUCTION OF PRESSING MATERIALS AND MOLDED BODIES |
JP2642554B2 (en) | 1991-12-27 | 1997-08-20 | 電気化学工業株式会社 | Adhesive composition |
TW259846B (en) | 1992-09-11 | 1995-10-11 | Canon Kk | |
WO1995032229A1 (en) * | 1994-05-19 | 1995-11-30 | E.I. Du Pont De Nemours And Company | Coatings comprising self-stabilized lattices prepared in an aqueous carrier |
US5585671A (en) * | 1994-10-07 | 1996-12-17 | Nagesh; Voddarahalli K. | Reliable low thermal resistance package for high power flip clip ICs |
US5708129A (en) * | 1995-04-28 | 1998-01-13 | Johnson Matthey, Inc. | Die attach adhesive with reduced resin bleed |
CN1194059A (en) * | 1995-08-29 | 1998-09-23 | 美国3M公司 | Deformable substrate assembly for adhesively bonded electric device |
JPH09286971A (en) * | 1996-04-19 | 1997-11-04 | Toray Dow Corning Silicone Co Ltd | Silicon-based die bonding agent, production of semiconductor device and semiconductor device |
US5962854A (en) * | 1996-06-12 | 1999-10-05 | Ishizuka Electronics Corporation | Infrared sensor and infrared detector |
US5717034A (en) * | 1996-07-29 | 1998-02-10 | Quantum Materials, Inc. | Perfluorinated hydrocarbon polymer-filled adhesive formulations and uses therefor |
US5912282A (en) * | 1996-12-16 | 1999-06-15 | Shell Oil Company | Die attach adhesive compositions |
AU740553B2 (en) * | 1998-01-16 | 2001-11-08 | Loctite (R&D) Limited | Curable epoxy-based compositions |
JP4098403B2 (en) | 1998-06-01 | 2008-06-11 | 富士通株式会社 | Adhesive, bonding method, and assembly of mounting substrate |
US6063828A (en) | 1998-07-02 | 2000-05-16 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulant compositions for use in electronic devices |
US6316566B1 (en) | 1998-07-02 | 2001-11-13 | National Starch And Chemical Investment Holding Corporation | Package encapsulant compositions for use in electronic devices |
US6265530B1 (en) | 1998-07-02 | 2001-07-24 | National Starch And Chemical Investment Holding Corporation | Die attach adhesives for use in microelectronic devices |
US6281314B1 (en) | 1998-07-02 | 2001-08-28 | National Starch And Chemical Investment Holding Corporation | Compositions for use in the fabrication of circuit components and printed wire boards |
SG105450A1 (en) | 1998-07-02 | 2004-08-27 | Nat Starch Chem Invest | Allylated amide compounds and die attach adhesives prepared therefrom |
AR023110A1 (en) | 1999-03-22 | 2002-09-04 | Loctite Corp | THREADED ITEMS WITH DEFORMABLE COATED COATING ON THE SAME |
JP3601443B2 (en) | 1999-11-30 | 2004-12-15 | 日立化成工業株式会社 | Adhesive film, method of manufacturing the same, wiring board for mounting semiconductor, and semiconductor device |
JP3562465B2 (en) | 1999-11-30 | 2004-09-08 | 日立化成工業株式会社 | Adhesive composition, adhesive film and wiring board for mounting semiconductor |
DE50009029D1 (en) | 2000-04-08 | 2005-01-27 | Siemens Building Tech Ag | Method for optimizing a water spray extinguishing system and water spray extinguishing system for carrying out the method |
US6512043B2 (en) | 2000-05-10 | 2003-01-28 | Illinois Tool Works Inc. | Two-part structural adhesive having long working time |
US6522018B1 (en) * | 2000-05-16 | 2003-02-18 | Micron Technology, Inc. | Ball grid array chip packages having improved testing and stacking characteristics |
ATE291048T1 (en) * | 2000-05-18 | 2005-04-15 | Nat Starch Chem Invest | ADHESIVE ADHESIVES CONTAINING VINYL ETHER AND CARBAMAT OR UREA FUNCTIONALITY FOR SEMICONDUCTOR BOARDS |
US20030034124A1 (en) * | 2001-06-19 | 2003-02-20 | Yasuhiro Sugaya | Dielectric resonator, dielectric filter and method of producing the same, filter device combined to a transmit-receive antenna and communication apparatus using the same |
US6620651B2 (en) | 2001-10-23 | 2003-09-16 | National Starch And Chemical Investment Holding Corporation | Adhesive wafers for die attach application |
US6833629B2 (en) | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
US20050211555A1 (en) * | 2002-02-14 | 2005-09-29 | Solus Biosystems, Inc. | Method for multiple sample screening using IR spectroscopy |
US6620905B1 (en) * | 2002-02-23 | 2003-09-16 | National Starch And Chemical Investment Holding Corporation | Curable compositions containing benzoxazine |
US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
US6969914B2 (en) * | 2002-08-29 | 2005-11-29 | Micron Technology, Inc. | Electronic device package |
-
2003
- 2003-06-12 US US10/459,601 patent/US7176044B2/en not_active Expired - Lifetime
- 2003-11-20 WO PCT/US2003/037109 patent/WO2004048491A1/en not_active Application Discontinuation
- 2003-11-20 KR KR1020057009302A patent/KR101069047B1/en active IP Right Grant
- 2003-11-20 EP EP20030786906 patent/EP1565536B1/en not_active Expired - Lifetime
- 2003-11-20 DE DE60335821T patent/DE60335821D1/en not_active Expired - Lifetime
- 2003-11-20 AU AU2003295705A patent/AU2003295705A1/en not_active Abandoned
- 2003-11-20 AT AT03786906T patent/ATE496104T1/en not_active IP Right Cessation
- 2003-11-25 TW TW92133034A patent/TWI295312B/en not_active IP Right Cessation
-
2007
- 2007-02-09 US US11/673,140 patent/US7851254B2/en not_active Expired - Fee Related
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2928446A (en) | 1957-04-05 | 1960-03-15 | Little Inc A | Self-locking screw-threaded fastening member |
US4325985A (en) | 1980-03-31 | 1982-04-20 | The Oakland Corporation | Thread lock |
US4412048A (en) | 1981-09-11 | 1983-10-25 | Westinghouse Electric Corp. | Solventless UV dryable B-stageable epoxy adhesive |
US4632944A (en) | 1981-10-15 | 1986-12-30 | Loctite Corporation | Polymerizable fluid |
US5084532A (en) | 1988-08-10 | 1992-01-28 | Teroson Gmbh | Hot-melt adhesive of epoxy resins and amino groups-containing polyoxypropylene |
US6465893B1 (en) | 1990-09-24 | 2002-10-15 | Tessera, Inc. | Stacked chip assembly |
US5140404A (en) | 1990-10-24 | 1992-08-18 | Micron Technology, Inc. | Semiconductor device manufactured by a method for attaching a semiconductor die to a leadframe using a thermoplastic covered carrier tape |
US5300608A (en) | 1992-03-31 | 1994-04-05 | Loctite Corporation | Process for preparing alkoxy-terminated organosiloxane fluids using organo-lithium reagents |
JPH05339429A (en) | 1992-06-10 | 1993-12-21 | Japan Synthetic Rubber Co Ltd | Rubber composition |
US5447988A (en) | 1993-02-26 | 1995-09-05 | Quantum Materials | Solvent free die-attach compositions |
US5286679A (en) | 1993-03-18 | 1994-02-15 | Micron Technology, Inc. | Method for attaching a semiconductor die to a leadframe using a patterned adhesive layer |
US5323060A (en) | 1993-06-02 | 1994-06-21 | Micron Semiconductor, Inc. | Multichip module having a stacked chip arrangement |
US6034194A (en) | 1994-09-02 | 2000-03-07 | Quantum Materials/Dexter Corporation | Bismaleimide-divinyl adhesive compositions and uses therefor |
US6034195A (en) | 1994-09-02 | 2000-03-07 | Dexter Corporation | Thermosetting resin compositions containing maleimide and/or vinyl compounds |
US5789757A (en) | 1996-09-10 | 1998-08-04 | The Dexter Corporation | Malemide containing formulations and uses therefor |
US6187886B1 (en) | 1996-09-10 | 2001-02-13 | Dexter Corporation | Maleimide containing formulations and uses therefor |
US5973166A (en) | 1998-03-02 | 1999-10-26 | The Dexter Corporation | Method for the preparation of maleimides |
US6211320B1 (en) | 1999-07-28 | 2001-04-03 | Dexter Corporation | Low viscosity acrylate monomers formulations containing same and uses therefor |
WO2003052016A2 (en) | 2001-12-14 | 2003-06-26 | National Starch And Chemical Investment Holding Corporation | Dual cure b-stageable adhesive for die attach |
Non-Patent Citations (1)
Title |
---|
DATABASE WPI Section Ch Week 199404, Derwent World Patents Index; Class A12, AN 1994-031914, XP002277590 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009129136A2 (en) * | 2008-04-16 | 2009-10-22 | Henkel Corporation | Flow controllable b-stageable composition |
WO2009129136A3 (en) * | 2008-04-16 | 2010-01-21 | Henkel Corporation | Flow controllable b-stageable composition |
EP2608231A1 (en) | 2011-12-21 | 2013-06-26 | Henkel AG & Co. KGaA | Electric component |
WO2013092407A1 (en) | 2011-12-21 | 2013-06-27 | Henkel Ag & Co. Kgaa | Method for manufacturing an electric component |
Also Published As
Publication number | Publication date |
---|---|
KR101069047B1 (en) | 2011-09-30 |
TWI295312B (en) | 2008-04-01 |
US7176044B2 (en) | 2007-02-13 |
US7851254B2 (en) | 2010-12-14 |
KR20050083978A (en) | 2005-08-26 |
EP1565536B1 (en) | 2011-01-19 |
US20080160315A1 (en) | 2008-07-03 |
DE60335821D1 (en) | 2011-03-03 |
TW200426200A (en) | 2004-12-01 |
AU2003295705A1 (en) | 2004-06-18 |
US20040102566A1 (en) | 2004-05-27 |
EP1565536A1 (en) | 2005-08-24 |
ATE496104T1 (en) | 2011-02-15 |
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