WO2004042779A2 - Method of detaching a thin film at moderate temperature after co-implantation - Google Patents
Method of detaching a thin film at moderate temperature after co-implantation Download PDFInfo
- Publication number
- WO2004042779A2 WO2004042779A2 PCT/EP2003/013148 EP0313148W WO2004042779A2 WO 2004042779 A2 WO2004042779 A2 WO 2004042779A2 EP 0313148 W EP0313148 W EP 0313148W WO 2004042779 A2 WO2004042779 A2 WO 2004042779A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- species
- source substrate
- substrate
- implanted
- temperature
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2003801023000A CN1708843B (en) | 2002-11-07 | 2003-10-30 | Method of detaching a thin film at moderate temperature after co-implantation |
KR1020057008067A KR101122859B1 (en) | 2002-11-07 | 2003-10-30 | Method of detaching a thin film at moderate temperature after co-implantation |
AU2003298137A AU2003298137A1 (en) | 2002-11-07 | 2003-10-30 | Method of detaching a thin film at moderate temperature after co-implantation |
EP03795839.4A EP1559139B1 (en) | 2002-11-07 | 2003-10-30 | Method of detaching a thin film at moderate temperature after co-implantation |
JP2004549162A JP4999272B2 (en) | 2002-11-07 | 2003-10-30 | Method of separating thin films at medium temperature after co-injection |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/13935 | 2002-11-07 | ||
FR0213935A FR2847076B1 (en) | 2002-11-07 | 2002-11-07 | METHOD OF DETACHING A THIN LAYER AT MODERATE TEMPERATURE AFTER CO-IMPLANTATION |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004042779A2 true WO2004042779A2 (en) | 2004-05-21 |
WO2004042779A3 WO2004042779A3 (en) | 2004-09-23 |
Family
ID=32116442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2003/013148 WO2004042779A2 (en) | 2002-11-07 | 2003-10-30 | Method of detaching a thin film at moderate temperature after co-implantation |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1559139B1 (en) |
JP (2) | JP4999272B2 (en) |
KR (1) | KR101122859B1 (en) |
CN (1) | CN1708843B (en) |
AU (1) | AU2003298137A1 (en) |
FR (1) | FR2847076B1 (en) |
TW (1) | TWI294663B (en) |
WO (1) | WO2004042779A2 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1605504A1 (en) * | 2004-06-10 | 2005-12-14 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method for manufacturing a SOI wafer |
WO2006032947A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Thin layer transfer method wherein a co-implantation step is performed according to conditions avaoiding blisters formation and limiting roughness |
WO2006032946A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Transfer method with a treatment of a surface to be bonded |
WO2006037783A1 (en) * | 2004-10-04 | 2006-04-13 | S.O.I.Tec Silicon On Insulator Technologies | Method for transferring a thin film comprising a controlled disturbance of a crystal structure |
JP2008510315A (en) * | 2004-08-18 | 2008-04-03 | コーニング インコーポレイテッド | Strained semiconductor structure on insulator and method for making strained semiconductor structure on insulator |
US7833877B2 (en) | 2006-10-27 | 2010-11-16 | S.O.I.Tec Silicon On Insulator Technologies | Method for producing a semiconductor substrate |
WO2011023905A1 (en) | 2009-08-26 | 2011-03-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for detaching a silicon thin film by means of splitting, using triple implantation |
US8142593B2 (en) | 2005-08-16 | 2012-03-27 | Commissariat A L'energie Atomique | Method of transferring a thin film onto a support |
US8252663B2 (en) | 2009-06-18 | 2012-08-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer |
WO2012150184A1 (en) * | 2011-05-02 | 2012-11-08 | Commissariat à l'énergie atomique et aux énergies alternatives | Process for forming a crack in a material |
US8609514B2 (en) | 1997-12-10 | 2013-12-17 | Commissariat A L'energie Atomique | Process for the transfer of a thin film comprising an inclusion creation step |
US8664084B2 (en) | 2005-09-28 | 2014-03-04 | Commissariat A L'energie Atomique | Method for making a thin-film element |
US8778775B2 (en) | 2006-12-19 | 2014-07-15 | Commissariat A L'energie Atomique | Method for preparing thin GaN layers by implantation and recycling of a starting substrate |
US10611630B2 (en) | 2016-09-27 | 2020-04-07 | Infineon Technologies Ag | Method for processing a monocrystalline substrate and micromechanical structure |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873299B1 (en) * | 2007-08-20 | 2008-12-11 | 주식회사 실트론 | Manufacturing method for ssoi wafer |
KR101219358B1 (en) * | 2011-07-26 | 2013-01-21 | 삼성코닝정밀소재 주식회사 | Method for separating substrate and production method for bonding substrate using the same |
FR3045677B1 (en) | 2015-12-22 | 2019-07-19 | Soitec | PROCESS FOR PRODUCING A MONOCRYSTALLINE LAYER, IN PARTICULAR PIEZOELECTRIC |
FR3045678B1 (en) | 2015-12-22 | 2017-12-22 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER AND MICROELECTRONIC, PHOTONIC OR OPTICAL DEVICE COMPRISING SUCH A LAYER |
JP6563360B2 (en) * | 2016-04-05 | 2019-08-21 | 信越化学工業株式会社 | Method for manufacturing composite wafer having oxide single crystal thin film |
CN106222754A (en) * | 2016-07-29 | 2016-12-14 | 成都立威讯科技有限公司 | A kind of sapphire separation method of exquisite workmanship |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5877070A (en) | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2738671B1 (en) * | 1995-09-13 | 1997-10-10 | Commissariat Energie Atomique | PROCESS FOR PRODUCING THIN FILMS WITH SEMICONDUCTOR MATERIAL |
US6150239A (en) * | 1997-05-31 | 2000-11-21 | Max Planck Society | Method for the transfer of thin layers monocrystalline material onto a desirable substrate |
JP3412470B2 (en) * | 1997-09-04 | 2003-06-03 | 三菱住友シリコン株式会社 | Method for manufacturing SOI substrate |
JPH11307747A (en) * | 1998-04-17 | 1999-11-05 | Nec Corp | Soi substrate and production thereof |
FR2811807B1 (en) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | METHOD OF CUTTING A BLOCK OF MATERIAL AND FORMING A THIN FILM |
US6600173B2 (en) * | 2000-08-30 | 2003-07-29 | Cornell Research Foundation, Inc. | Low temperature semiconductor layering and three-dimensional electronic circuits using the layering |
-
2002
- 2002-11-07 FR FR0213935A patent/FR2847076B1/en not_active Expired - Fee Related
-
2003
- 2003-10-30 CN CN2003801023000A patent/CN1708843B/en not_active Expired - Lifetime
- 2003-10-30 EP EP03795839.4A patent/EP1559139B1/en not_active Expired - Lifetime
- 2003-10-30 JP JP2004549162A patent/JP4999272B2/en not_active Expired - Lifetime
- 2003-10-30 WO PCT/EP2003/013148 patent/WO2004042779A2/en active Application Filing
- 2003-10-30 AU AU2003298137A patent/AU2003298137A1/en not_active Abandoned
- 2003-10-30 KR KR1020057008067A patent/KR101122859B1/en active IP Right Grant
- 2003-11-04 TW TW092130723A patent/TWI294663B/en not_active IP Right Cessation
-
2011
- 2011-11-04 JP JP2011242033A patent/JP2012084897A/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5877070A (en) | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8609514B2 (en) | 1997-12-10 | 2013-12-17 | Commissariat A L'energie Atomique | Process for the transfer of a thin film comprising an inclusion creation step |
EP1605504A1 (en) * | 2004-06-10 | 2005-12-14 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method for manufacturing a SOI wafer |
US7256103B2 (en) | 2004-06-10 | 2007-08-14 | S.O.I.Tec Silicon On Insulator Technologies | Method for manufacturing a compound material wafer |
EP2293326A3 (en) * | 2004-06-10 | 2012-01-25 | S.O.I.TEC Silicon on Insulator Technologies S.A. | Method for manufacturing a SOI wafer |
JP2008510315A (en) * | 2004-08-18 | 2008-04-03 | コーニング インコーポレイテッド | Strained semiconductor structure on insulator and method for making strained semiconductor structure on insulator |
WO2006032947A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Thin layer transfer method wherein a co-implantation step is performed according to conditions avaoiding blisters formation and limiting roughness |
WO2006032946A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Transfer method with a treatment of a surface to be bonded |
JP2008513989A (en) * | 2004-09-21 | 2008-05-01 | エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ | Thin layer transfer method that performs co-injection process under conditions that avoid the formation of bubbles and limit roughness |
US7326628B2 (en) | 2004-09-21 | 2008-02-05 | S.O.I.Tec Silicon On Insulator Technologies | Thin layer transfer method utilizing co-implantation to reduce blister formation and to surface roughness |
EP2048706A1 (en) * | 2004-09-21 | 2009-04-15 | S.O.I.Tec Silicon on Insulator Technologies | Transfer method with a treatment of a surface to be bonded |
US7615464B2 (en) | 2004-09-21 | 2009-11-10 | S.O.I.Tec Silicon On Insulator Technologies | Transfer method with a treatment of a surface to be bonded |
US7972939B2 (en) | 2004-09-21 | 2011-07-05 | S.O.I.Tec Silicon On Insulator Technologies | Transfer method with a treatment of a surface to be bonded |
US7387947B2 (en) | 2004-10-04 | 2008-06-17 | S.O.I.Tec Silicon On Insulator Technologies | Method for transferring a thin layer including a controlled disturbance of a crystalline structure |
WO2006037783A1 (en) * | 2004-10-04 | 2006-04-13 | S.O.I.Tec Silicon On Insulator Technologies | Method for transferring a thin film comprising a controlled disturbance of a crystal structure |
US8142593B2 (en) | 2005-08-16 | 2012-03-27 | Commissariat A L'energie Atomique | Method of transferring a thin film onto a support |
US8664084B2 (en) | 2005-09-28 | 2014-03-04 | Commissariat A L'energie Atomique | Method for making a thin-film element |
US7833877B2 (en) | 2006-10-27 | 2010-11-16 | S.O.I.Tec Silicon On Insulator Technologies | Method for producing a semiconductor substrate |
US8778775B2 (en) | 2006-12-19 | 2014-07-15 | Commissariat A L'energie Atomique | Method for preparing thin GaN layers by implantation and recycling of a starting substrate |
US8252663B2 (en) | 2009-06-18 | 2012-08-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer |
WO2011023905A1 (en) | 2009-08-26 | 2011-03-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for detaching a silicon thin film by means of splitting, using triple implantation |
FR2974944A1 (en) * | 2011-05-02 | 2012-11-09 | Commissariat Energie Atomique | METHOD OF FORMING A FRACTURE IN A MATERIAL |
WO2012150184A1 (en) * | 2011-05-02 | 2012-11-08 | Commissariat à l'énergie atomique et aux énergies alternatives | Process for forming a crack in a material |
US9105688B2 (en) | 2011-05-02 | 2015-08-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for forming a crack in a material |
US10611630B2 (en) | 2016-09-27 | 2020-04-07 | Infineon Technologies Ag | Method for processing a monocrystalline substrate and micromechanical structure |
Also Published As
Publication number | Publication date |
---|---|
EP1559139B1 (en) | 2013-05-29 |
FR2847076B1 (en) | 2005-02-18 |
TW200423295A (en) | 2004-11-01 |
AU2003298137A8 (en) | 2004-06-07 |
AU2003298137A1 (en) | 2004-06-07 |
JP4999272B2 (en) | 2012-08-15 |
EP1559139A2 (en) | 2005-08-03 |
JP2012084897A (en) | 2012-04-26 |
CN1708843B (en) | 2010-08-18 |
FR2847076A1 (en) | 2004-05-14 |
WO2004042779A3 (en) | 2004-09-23 |
TWI294663B (en) | 2008-03-11 |
CN1708843A (en) | 2005-12-14 |
KR20050060111A (en) | 2005-06-21 |
JP2006505928A (en) | 2006-02-16 |
KR101122859B1 (en) | 2012-03-21 |
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