WO2004035855A3 - Method of producing a high density pattern of isolated clusters - Google Patents

Method of producing a high density pattern of isolated clusters Download PDF

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Publication number
WO2004035855A3
WO2004035855A3 PCT/CA2003/001581 CA0301581W WO2004035855A3 WO 2004035855 A3 WO2004035855 A3 WO 2004035855A3 CA 0301581 W CA0301581 W CA 0301581W WO 2004035855 A3 WO2004035855 A3 WO 2004035855A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
clusters
high density
producing
density pattern
Prior art date
Application number
PCT/CA2003/001581
Other languages
French (fr)
Other versions
WO2004035855A2 (en
WO2004035855A8 (en
Inventor
Edward Sacher
Konstantinos Piyakis
De-Quan Yang
Original Assignee
Ecole Polytech
Edward Sacher
Konstantinos Piyakis
De-Quan Yang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech, Edward Sacher, Konstantinos Piyakis, De-Quan Yang filed Critical Ecole Polytech
Priority to AU2003278021A priority Critical patent/AU2003278021A1/en
Publication of WO2004035855A2 publication Critical patent/WO2004035855A2/en
Publication of WO2004035855A8 publication Critical patent/WO2004035855A8/en
Publication of WO2004035855A3 publication Critical patent/WO2004035855A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electron Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a method of producing a high density pattern of isolated clusters on a surface of a substrate, comprising treating the surface of the substrate to produce element-adhesion sites distributed on the surface of the substrate in accordance with the pattern, depositing a first transition series element on the surface of the substrate, and forming, by diffusion and/or coalescence, clusters of the deposited element on the elementadhesion sites. The size of the clusters can be manipulated by irradiating the clusters with a low energy ion beam to cause coalescence of the clusters and diffusion of these clusters on the surface of the substrate whereby the size of the clusters is changed. The surface of the substrate can also be irradiated at a grazing angle with a low energy ion beam to modify the surface of the substrate and thereby enhance adhesion of the clusters of the deposited element to the modified surface. Finally, contact mode atomic force microscopy can be used for surface local cleaning and cluster assembling by applying an atomic force microscopy tip to the surface of the substrate and scanning with this tip a region of the substrate surface.
PCT/CA2003/001581 2002-10-18 2003-10-17 Method of producing a high density pattern of isolated clusters WO2004035855A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003278021A AU2003278021A1 (en) 2002-10-18 2003-10-17 Method of producing a high density pattern of isolated clusters

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41910902P 2002-10-18 2002-10-18
US60/419,109 2002-10-18

Publications (3)

Publication Number Publication Date
WO2004035855A2 WO2004035855A2 (en) 2004-04-29
WO2004035855A8 WO2004035855A8 (en) 2004-07-08
WO2004035855A3 true WO2004035855A3 (en) 2005-01-13

Family

ID=32108029

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2003/001581 WO2004035855A2 (en) 2002-10-18 2003-10-17 Method of producing a high density pattern of isolated clusters

Country Status (2)

Country Link
AU (1) AU2003278021A1 (en)
WO (1) WO2004035855A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4200193A1 (en) * 1992-01-07 1993-07-08 Fraunhofer Ges Forschung Prodn. of quantum point systems - by vaporising cluster-forming atoms and polymerising monomers between electrodes in high vacuum, and coalescing clusters in electron beam
US6342307B1 (en) * 1997-11-24 2002-01-29 The Board Of Trustees Of The University Of Illinois Embedded cluster metal-polymeric micro interface and process for producing the same
US20020150843A1 (en) * 2001-04-17 2002-10-17 Jeffrey Stewart Method of preparing thin supported films by vacuum deposition
CA2377315A1 (en) * 2002-03-19 2003-09-19 Ecole Polytechnique De Montreal Method for the synthesis and characterization of supported metal nanoclusters of controlled size, surface distribution, shape and interfacial adhesion

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4200193A1 (en) * 1992-01-07 1993-07-08 Fraunhofer Ges Forschung Prodn. of quantum point systems - by vaporising cluster-forming atoms and polymerising monomers between electrodes in high vacuum, and coalescing clusters in electron beam
US6342307B1 (en) * 1997-11-24 2002-01-29 The Board Of Trustees Of The University Of Illinois Embedded cluster metal-polymeric micro interface and process for producing the same
US20020150843A1 (en) * 2001-04-17 2002-10-17 Jeffrey Stewart Method of preparing thin supported films by vacuum deposition
CA2377315A1 (en) * 2002-03-19 2003-09-19 Ecole Polytechnique De Montreal Method for the synthesis and characterization of supported metal nanoclusters of controlled size, surface distribution, shape and interfacial adhesion

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
A. SADOUGH-VANINI, D Q YANG, L MARTINU, E SACHER: "The adhesion of evaporated copper to dow cyclotene 3022, determined by microscratch testing", THE JOURNAL OF ADHESION, vol. 77, no. 4, 2001, pages 309 - 321, XP008031280 *
D Q YANG, L MARTINU, E SACHER, A SADOUGH-VANINI: "nitrogen plasma treatment of the dow cyclotene 3022 surface and its reaction with evaporated copper", APPLIED SURFACE SCIENCE, vol. 177, 2001, pages 85 - 95, XP008031205 *
HU X ET AL: "Nano-scale metal cluster deposition using STM", APPL. PHYS. A, MATER. SCI. PROCESS. (GERMANY), APPLIED PHYSICS A (MATERIALS SCIENCE PROCESSING), FEB. 1999, SPRINGER-VERLAG, GERMANY, vol. A68, no. 2, February 1999 (1999-02-01), pages 137 - 143, XP008031150, ISSN: 0947-8396 *
L J GERENSER: "an x-ray photoemission spectroscopy study of chemical interactions at silver/plasma modified polyethylene interfaces: correlations with adhesion", JOURNAL OF VACUUM TECHNOLOGY, September 1988 (1988-09-01) - October 1988 (1988-10-01), pages 2897 - 2093, XP001191280 *
TADA T ET AL: "FORMATION OF 10 NM SI STRUCTURES USING SIZE-SELECTED METAL CLUSTERS", JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB, vol. 31, no. 7, 7 April 1998 (1998-04-07), pages L21 - L24, XP000780542, ISSN: 0022-3727 *

Also Published As

Publication number Publication date
AU2003278021A8 (en) 2004-05-04
AU2003278021A1 (en) 2004-05-04
WO2004035855A2 (en) 2004-04-29
WO2004035855A8 (en) 2004-07-08

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