WO2004031858A3 - Resist system, use of a resist system and lithography method for the production of semiconductor elements - Google Patents

Resist system, use of a resist system and lithography method for the production of semiconductor elements Download PDF

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Publication number
WO2004031858A3
WO2004031858A3 PCT/DE2003/003178 DE0303178W WO2004031858A3 WO 2004031858 A3 WO2004031858 A3 WO 2004031858A3 DE 0303178 W DE0303178 W DE 0303178W WO 2004031858 A3 WO2004031858 A3 WO 2004031858A3
Authority
WO
WIPO (PCT)
Prior art keywords
resist system
production
lithography method
semiconductor elements
resist
Prior art date
Application number
PCT/DE2003/003178
Other languages
German (de)
French (fr)
Other versions
WO2004031858A2 (en
Inventor
Wolf-Dieter Domke
Oliver Kirch
Karl Kragler
Klaus Lowack
Original Assignee
Infineon Technologies Ag
Wolf-Dieter Domke
Oliver Kirch
Karl Kragler
Klaus Lowack
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Wolf-Dieter Domke, Oliver Kirch, Karl Kragler, Klaus Lowack filed Critical Infineon Technologies Ag
Priority to AU2003281916A priority Critical patent/AU2003281916A1/en
Priority to EP03773450A priority patent/EP1546806A2/en
Publication of WO2004031858A2 publication Critical patent/WO2004031858A2/en
Publication of WO2004031858A3 publication Critical patent/WO2004031858A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.
PCT/DE2003/003178 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements WO2004031858A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003281916A AU2003281916A1 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements
EP03773450A EP1546806A2 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10246546.0 2002-09-30
DE2002146546 DE10246546B4 (en) 2002-09-30 2002-09-30 Use of a resist system and lithographic process for the production of semiconductor devices

Publications (2)

Publication Number Publication Date
WO2004031858A2 WO2004031858A2 (en) 2004-04-15
WO2004031858A3 true WO2004031858A3 (en) 2004-07-01

Family

ID=32010280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/003178 WO2004031858A2 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements

Country Status (4)

Country Link
EP (1) EP1546806A2 (en)
AU (1) AU2003281916A1 (en)
DE (1) DE10246546B4 (en)
WO (1) WO2004031858A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US20020028406A1 (en) * 2000-06-21 2002-03-07 Lee Geun Su Partially crosslinked polymer for bilayer photoresist
US6444395B1 (en) * 1999-03-12 2002-09-03 Matsushita Electric Industrial Co., Ltd. Pattern formation material and method
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59808434D1 (en) * 1997-11-28 2003-06-26 Infineon Technologies Ag Chemically amplified resist for electron beam lithography
EP0955562A1 (en) * 1998-05-07 1999-11-10 Siemens Aktiengesellschaft Chemically amplified resist
JP4139548B2 (en) * 2000-04-06 2008-08-27 富士フイルム株式会社 Positive photoresist composition
JP3853168B2 (en) * 2001-03-28 2006-12-06 松下電器産業株式会社 Pattern formation method
DE10137109A1 (en) * 2001-07-30 2003-02-27 Infineon Technologies Ag Photoresist for lithographic techniques, e.g. structuring silicon wafers, comprises a solution of organopolysiloxane with carbon side chains containing acid-labile groups attached to highly polar groups
DE10243742B4 (en) * 2002-09-20 2007-11-08 Qimonda Ag Method for structuring semiconductor substrates using a photoresist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6444395B1 (en) * 1999-03-12 2002-09-03 Matsushita Electric Industrial Co., Ltd. Pattern formation material and method
US20020028406A1 (en) * 2000-06-21 2002-03-07 Lee Geun Su Partially crosslinked polymer for bilayer photoresist
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LEUSCHNER R ET AL: "Bilayer resist process for exposure with low-voltage electrons (STM-lithography)", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 30, no. 1, 1996, pages 447 - 450, XP004003121, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
EP1546806A2 (en) 2005-06-29
WO2004031858A2 (en) 2004-04-15
DE10246546A1 (en) 2004-04-15
AU2003281916A1 (en) 2004-04-23
AU2003281916A8 (en) 2004-04-23
DE10246546B4 (en) 2006-10-05

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