WO2004031858A3 - Resist system, use of a resist system and lithography method for the production of semiconductor elements - Google Patents

Resist system, use of a resist system and lithography method for the production of semiconductor elements Download PDF

Info

Publication number
WO2004031858A3
WO2004031858A3 PCT/DE2003/003178 DE0303178W WO2004031858A3 WO 2004031858 A3 WO2004031858 A3 WO 2004031858A3 DE 0303178 W DE0303178 W DE 0303178W WO 2004031858 A3 WO2004031858 A3 WO 2004031858A3
Authority
WO
WIPO (PCT)
Prior art keywords
resist system
production
use
lithography method
semiconductor elements
Prior art date
Application number
PCT/DE2003/003178
Other languages
German (de)
French (fr)
Other versions
WO2004031858A2 (en
Inventor
Wolf-Dieter Domke
Oliver Kirch
Karl Kragler
Klaus Lowack
Original Assignee
Infineon Technologies Ag
Wolf-Dieter Domke
Oliver Kirch
Karl Kragler
Klaus Lowack
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10246546.0 priority Critical
Priority to DE2002146546 priority patent/DE10246546B4/en
Application filed by Infineon Technologies Ag, Wolf-Dieter Domke, Oliver Kirch, Karl Kragler, Klaus Lowack filed Critical Infineon Technologies Ag
Publication of WO2004031858A2 publication Critical patent/WO2004031858A2/en
Publication of WO2004031858A3 publication Critical patent/WO2004031858A3/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Abstract

The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.
PCT/DE2003/003178 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements WO2004031858A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10246546.0 2002-09-30
DE2002146546 DE10246546B4 (en) 2002-09-30 2002-09-30 Use of a resist system and lithography process for producing semiconductor devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20030773450 EP1546806A2 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements
AU2003281916A AU2003281916A1 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements

Publications (2)

Publication Number Publication Date
WO2004031858A2 WO2004031858A2 (en) 2004-04-15
WO2004031858A3 true WO2004031858A3 (en) 2004-07-01

Family

ID=32010280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/003178 WO2004031858A2 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements

Country Status (4)

Country Link
EP (1) EP1546806A2 (en)
AU (1) AU2003281916A1 (en)
DE (1) DE10246546B4 (en)
WO (1) WO2004031858A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US20020028406A1 (en) * 2000-06-21 2002-03-07 Lee Geun Su Partially crosslinked polymer for bilayer photoresist
US6444395B1 (en) * 1999-03-12 2002-09-03 Matsushita Electric Industrial Co., Ltd. Pattern formation material and method
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0919867B1 (en) * 1997-11-28 2003-05-21 Infineon Technologies AG Chemically amplified resist for electron beam lithography
EP0955562A1 (en) * 1998-05-07 1999-11-10 Siemens Aktiengesellschaft Chemically amplified resist
JP4139548B2 (en) * 2000-04-06 2008-08-27 富士フイルム株式会社 Positive photoresist composition
JP3853168B2 (en) * 2001-03-28 2006-12-06 松下電器産業株式会社 The pattern forming method
DE10137109A1 (en) * 2001-07-30 2003-02-27 Infineon Technologies Ag Photoresist for lithographic techniques, e.g. structuring silicon wafers, comprises a solution of organopolysiloxane with carbon side chains containing acid-labile groups attached to highly polar groups
DE10243742B4 (en) * 2002-09-20 2007-11-08 Qimonda Ag A process for patterning of semiconductor substrates using a photoresist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6444395B1 (en) * 1999-03-12 2002-09-03 Matsushita Electric Industrial Co., Ltd. Pattern formation material and method
US20020028406A1 (en) * 2000-06-21 2002-03-07 Lee Geun Su Partially crosslinked polymer for bilayer photoresist
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LEUSCHNER R ET AL: "Bilayer resist process for exposure with low-voltage electrons (STM-lithography)", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 30, no. 1, 1996, pages 447 - 450, XP004003121, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
AU2003281916A8 (en) 2004-04-23
WO2004031858A2 (en) 2004-04-15
AU2003281916A1 (en) 2004-04-23
DE10246546B4 (en) 2006-10-05
EP1546806A2 (en) 2005-06-29
DE10246546A1 (en) 2004-04-15

Similar Documents

Publication Publication Date Title
Zeigler et al. Self-Developing Polysilane Deep-UV Resists-Photochemistry, Photophysics, And Submicron Lithography
JP4562784B2 (en) Pattern forming method, the resist composition used in the pattern forming method, a developing solution and rinsing solution
US7700173B2 (en) Fibrillar microstructure for conformal contact and adhesion
EP0417557B1 (en) Positive-working radiation-sensitive mixture and recording material prepared therefrom
KR100266731B1 (en) Undercoating composition for photolithographic resist and photolithographic patterning resist material
EP1698937B1 (en) Positive resist composition and pattern-forming method using the same
Yamaguchi et al. Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films
US7897323B2 (en) Lithographic method
EP2637062A2 (en) Pattern forming method
CN102566323B (en) Compositions and processes for immersion lithography
Bender et al. Fabrication of nanostructures using a UV-based imprint technique
TW594869B (en) Manufacturing method of photomask and photomask
TW408248B (en) Photosensitive resin composition and method for forming pattern using the same
TW544757B (en) System and method for monitoring process variation by using electron beam
TW393593B (en) Multiple exposure masking system for forming multi-level resist profiles
CN1120185C (en) Copolymer containing N-vinyllactam derivative preparation method and photoresist
DE3625340C2 (en)
AU4678100A (en) Fluorinated polymers, photoresists and processes for microlithography
KR101238315B1 (en) Positive resist composition for immersion exposure and method of pattern formation with the same
AU3676500A (en) Aligner, microdevice, photomask, exposure method, and method of manufacturing device
KR20080027731A (en) Resist composition, resin for use in the resist composition, compound for use in the synthesis of the resin, and pattern-forming method usign the resist composition
TW528933B (en) Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
KR20110002796A (en) Self-aligned spacer multiple patterning methods
KR980003827A (en) Multiple exposure masking system to form a multi-level resist profile
WO2005088397A3 (en) A process of imaging a deep ultraviolet photoresist with a top coating and materials thereof

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003773450

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2003773450

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2003773450

Country of ref document: EP

NENP Non-entry into the national phase in:

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP