WO2004031858A3 - Resist system, use of a resist system and lithography method for the production of semiconductor elements - Google Patents

Resist system, use of a resist system and lithography method for the production of semiconductor elements Download PDF

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Publication number
WO2004031858A3
WO2004031858A3 PCT/DE2003/003178 DE0303178W WO2004031858A3 WO 2004031858 A3 WO2004031858 A3 WO 2004031858A3 DE 0303178 W DE0303178 W DE 0303178W WO 2004031858 A3 WO2004031858 A3 WO 2004031858A3
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WO
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Application
Patent type
Prior art keywords
resist system
production
use
lithography method
semiconductor elements
Prior art date
Application number
PCT/DE2003/003178
Other languages
German (de)
French (fr)
Other versions
WO2004031858A2 (en )
Inventor
Wolf-Dieter Domke
Oliver Kirch
Karl Kragler
Klaus Lowack
Original Assignee
Infineon Technologies Ag
Wolf-Dieter Domke
Oliver Kirch
Karl Kragler
Klaus Lowack
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Abstract

The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.
PCT/DE2003/003178 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements WO2004031858A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10246546.0 2002-09-30
DE2002146546 DE10246546B4 (en) 2002-09-30 2002-09-30 Use of a resist system and lithography process for producing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP20030773450 EP1546806A2 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements

Publications (2)

Publication Number Publication Date
WO2004031858A2 true WO2004031858A2 (en) 2004-04-15
WO2004031858A3 true true WO2004031858A3 (en) 2004-07-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/003178 WO2004031858A3 (en) 2002-09-30 2003-09-19 Resist system, use of a resist system and lithography method for the production of semiconductor elements

Country Status (3)

Country Link
EP (1) EP1546806A2 (en)
DE (1) DE10246546B4 (en)
WO (1) WO2004031858A3 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US20020028406A1 (en) * 2000-06-21 2002-03-07 Lee Geun Su Partially crosslinked polymer for bilayer photoresist
US6444395B1 (en) * 1999-03-12 2002-09-03 Matsushita Electric Industrial Co., Ltd. Pattern formation material and method
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0919867B1 (en) * 1997-11-28 2003-05-21 Infineon Technologies AG Chemically amplified resist for electron beam lithography
EP0955562A1 (en) * 1998-05-07 1999-11-10 Siemens Aktiengesellschaft Chemically amplified resist
JP4139548B2 (en) * 2000-04-06 2008-08-27 富士フイルム株式会社 Positive photoresist composition
JP3853168B2 (en) * 2001-03-28 2006-12-06 松下電器産業株式会社 The pattern forming method
DE10137109A1 (en) * 2001-07-30 2003-02-27 Infineon Technologies Ag Photoresist for lithographic techniques, e.g. structuring silicon wafers, comprises a solution of organopolysiloxane with carbon side chains containing acid-labile groups attached to highly polar groups
DE10243742B4 (en) * 2002-09-20 2007-11-08 Qimonda Ag A process for patterning of semiconductor substrates using a photoresist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6444395B1 (en) * 1999-03-12 2002-09-03 Matsushita Electric Industrial Co., Ltd. Pattern formation material and method
US20020028406A1 (en) * 2000-06-21 2002-03-07 Lee Geun Su Partially crosslinked polymer for bilayer photoresist
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LEUSCHNER R ET AL: "Bilayer resist process for exposure with low-voltage electrons (STM-lithography)", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 30, no. 1, 1996, pages 447 - 450, XP004003121, ISSN: 0167-9317 *

Also Published As

Publication number Publication date Type
WO2004031858A2 (en) 2004-04-15 application
DE10246546B4 (en) 2006-10-05 grant
EP1546806A2 (en) 2005-06-29 application
DE10246546A1 (en) 2004-04-15 application

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