WO2004027810A2 - System and method for removal of materials from an article - Google Patents

System and method for removal of materials from an article Download PDF

Info

Publication number
WO2004027810A2
WO2004027810A2 PCT/US2003/029733 US0329733W WO2004027810A2 WO 2004027810 A2 WO2004027810 A2 WO 2004027810A2 US 0329733 W US0329733 W US 0329733W WO 2004027810 A2 WO2004027810 A2 WO 2004027810A2
Authority
WO
WIPO (PCT)
Prior art keywords
organic
article
vacuum
oxygen
dielectric barrier
Prior art date
Application number
PCT/US2003/029733
Other languages
French (fr)
Other versions
WO2004027810A3 (en
Inventor
Thomas Johnston
Timothy Vaughn
Pete Atwell
Original Assignee
Thomas Johnston
Timothy Vaughn
Pete Atwell
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomas Johnston, Timothy Vaughn, Pete Atwell filed Critical Thomas Johnston
Priority to AU2003272613A priority Critical patent/AU2003272613A1/en
Priority to EP03754805A priority patent/EP1573771A4/en
Publication of WO2004027810A2 publication Critical patent/WO2004027810A2/en
Publication of WO2004027810A3 publication Critical patent/WO2004027810A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
    • B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
    • B09B5/00—Operations not covered by a single other subclass or by a single other group in this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
    • C22B7/001—Dry processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Definitions

  • the system and method of the present invention pertains to the manufacture of articles; more particularly, the removal of organic and organometallic materials from an article.
  • UV systems for removing organic materials such as polymers and photoresist from articles have been used for many years. Historically, most of the UV systems for removing organic or organometallic materials from articles have involved the use of 254 nm and 184 nm mercury lamp systems . In recent years , the development of systems for removing organic materials from an article has focused more on the use of dielectric barrier discharge lamps such as shown in U.S. Patent No. 5,510,158. These dielectric barrier discharge lamps are xenon lamps that emit light at 172-nm wavelength. It has been shown that ozone and activated oxygen can be produced by combining an oxygen-containing gas at a pressure of one atmosphere in the presence of xenon 172-nm wavelength source.
  • the system and method of the present invention facilitates the dry environment removal of organic and organometallic materials, such as a polymer created by the semiconductor etching process and photoresist materials, from the surface and sidewalls of an article without the use wet chemistry or standard atmospheric oxidative processes.
  • organic and organometallic materials such as a polymer created by the semiconductor etching process and photoresist materials
  • An article with organic or organometallic materials, such as a polymer or photoresist, located thereon is placed into a vacuum reaction chamber.
  • the vacuum reaction chamber contains an oxygen-containing gas at a reduced pressure of between about 50 mtorr to about 1500 mtorr.
  • an irradiation source Located within the vacuum reaction chamber is an irradiation source.
  • the irradiation source is a xenon gas dielectric barrier discharge lamp, which emits vacuum ultraviolet rays having a wavelength of about 172 nm. It is essential that the irradiation source have the ability to withstand the low-pressure conditions within the vacuum reaction chamber.
  • the 172 nm xenon wavelength induces an intermolecular molecule energy transfer, thereby destroying the molecular bonds of the organic or organometallic material.
  • the 172 nm energy in the presence of oxygen-containing gases creates ozone and activated oxygen.
  • the products resulting from the destruction of the molecular bonds are then oxidized by the ozone and activated oxygen.
  • the volatile byproducts created from this reaction with ozone and activated oxygen are abated from the article surfaces via the vacuum system.
  • the vacuum increases the amount of 172 nm energy at the surface of the article resulting in an increase in the overall reaction rate.
  • One advantage of the present invention over the prior art is the elimination of the need for wet chemistry in the removal of organic and organometallic materials, thereby eliminating the need for expensive solvents and environmentally destructive and potentially hazardous byproducts.
  • Another advantage is the elimination of the use of plasma-based photoresist removal processes, thereby eliminating the potential for damage from electrostatic charging commonly found in plasma-based ashers .
  • Yet another advantage is the increase in the overall reaction rate which is highly beneficial in a commercially viable post-etch cleaning process for semiconductor and reticle manufacturing.
  • Figure 1 is a schematic view of a vacuum reaction chamber containing a dielectric barrier discharge lamp
  • Figure 2A is a "before" picture of a metallic article before application of the present invention.
  • Figure 2B is an "after" picture of the metallic article shown in Figure 2A after application of the present invention. DESCRIPTION OF THE EMBODIMENTS
  • a xenon 172 nm dielectric barrier discharge lamp at very low pressures from about 50 mtorr to about 1500 mtorr allows for an extended life of activated oxygen, which is produced by a xenon 172 nm dielectric barrier discharge lamp (0 3 - 0 2 + O) or (20 2 -> 0 3 + 0) .
  • the ozone 0 3 and activated atomic oxygen O react with the organic and organometallic materials that have broken bonds via the intermolecular molecule energy transfer from the xenon 172 nm dielectric barrier discharge lamp.
  • a vacuum reaction chamber 20 is constructed with single or multiple lamp 172 nm lamp sources 22, vacuum inlet ports 24, particle gas inlet ports 26, a single wafer or reticle stage 28, and TC or thermogauge inlets 30.
  • the system for producing vacuum within the vacuum reaction chamber 20 includes a two-stage 300 L/min pump 30 or some variation thereof .
  • the photodissociation process caused by the UV light source performs the below resist etches.
  • the system and method of the present invention removes polymers created by the metal etch process along with the complete removal of the photoresist material such as a SPR-700 Shipley photoresist material.
  • the sample which appears in the photographs at Figures 2A and 2B is a Silicon wafer that contains a IK of titanium, 3K of titanium tungsten, plus 6K of aluminum with 0.5% copper (lKTi/3K TiW w/ 6 K Al Cu 0.5%) that was etched with a Lam Researcher Corporation etcher with no pacification process.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The system and method of the present invention removes organic and organometallic materials from an article in reduced pressure atmosphere containing ozone and activated oxygen. A dielectric barrier discharge lamp induces an intermolecular molecule energy transfert to the organic and organometallic material. The dielectric barrier discharge lamp emits vacuum ultaviolet rays having a wavelength of about 172 nm that produce a photochemical reaction with the oxygen-containing gas to generate ozone and the activated oxygen. The organic and organometallic material is then attached by the ozone and activated oxygen.

Description

Title: System and Method for Removal of Materials from an Article
[0001] This present application claims benefit from U.S. Provisional Patent Application Serial Number 60/412604 filed September 20, 2002 in the names of Thomas Johnston, Tim Vaughn and Pete Atwell entitled "Method and System for Oxidizing an Article at Low Pressure
BACKGROUND OF THE INVENTION Field of the Invention
[0002] The system and method of the present invention pertains to the manufacture of articles; more particularly, the removal of organic and organometallic materials from an article. Background
[0003] Ultraviolet systems for removing organic materials such as polymers and photoresist from articles have been used for many years. Historically, most of the UV systems for removing organic or organometallic materials from articles have involved the use of 254 nm and 184 nm mercury lamp systems . In recent years , the development of systems for removing organic materials from an article has focused more on the use of dielectric barrier discharge lamps such as shown in U.S. Patent No. 5,510,158. These dielectric barrier discharge lamps are xenon lamps that emit light at 172-nm wavelength. It has been shown that ozone and activated oxygen can be produced by combining an oxygen-containing gas at a pressure of one atmosphere in the presence of xenon 172-nm wavelength source. It has also been show that the production of ozone and activated oxygen for the use in the oxidation process consumes a large portion of the energy produced by 172-nm xenon wavelength source . [0004] When organic or organometallic materials are located on the sidewalls of an article, removal of these materials is typically accomplished in a wet chemistry environment. The removal of organic or organometallic materials from an article in a wet chemistry environment can produce surface damage to the article as well as create hazardous byproducts .
[0005] The need remains for a commercially effective dry environment system and method that effectively removes organic and organometallic materials from the surface and sidewalls of an article at a rapid rate
SUMMARY OF THE INVENTION
[0006] The system and method of the present invention facilitates the dry environment removal of organic and organometallic materials, such as a polymer created by the semiconductor etching process and photoresist materials, from the surface and sidewalls of an article without the use wet chemistry or standard atmospheric oxidative processes.
[0007] An article with organic or organometallic materials, such as a polymer or photoresist, located thereon is placed into a vacuum reaction chamber. The vacuum reaction chamber contains an oxygen-containing gas at a reduced pressure of between about 50 mtorr to about 1500 mtorr. Located within the vacuum reaction chamber is an irradiation source. Typically, the irradiation source is a xenon gas dielectric barrier discharge lamp, which emits vacuum ultraviolet rays having a wavelength of about 172 nm. It is essential that the irradiation source have the ability to withstand the low-pressure conditions within the vacuum reaction chamber.
[0008] The 172 nm xenon wavelength induces an intermolecular molecule energy transfer, thereby destroying the molecular bonds of the organic or organometallic material. The 172 nm energy in the presence of oxygen-containing gases creates ozone and activated oxygen. The products resulting from the destruction of the molecular bonds are then oxidized by the ozone and activated oxygen. The volatile byproducts created from this reaction with ozone and activated oxygen are abated from the article surfaces via the vacuum system. In addition to the removal of the reaction byproducts, the vacuum increases the amount of 172 nm energy at the surface of the article resulting in an increase in the overall reaction rate. [0009] One advantage of the present invention over the prior art is the elimination of the need for wet chemistry in the removal of organic and organometallic materials, thereby eliminating the need for expensive solvents and environmentally destructive and potentially hazardous byproducts. Another advantage is the elimination of the use of plasma-based photoresist removal processes, thereby eliminating the potential for damage from electrostatic charging commonly found in plasma-based ashers . Yet another advantage is the increase in the overall reaction rate which is highly beneficial in a commercially viable post-etch cleaning process for semiconductor and reticle manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS
[0010] A better understanding of the system and method of the present invention may be had by reference to the drawing figures, wherein:
Figure 1 is a schematic view of a vacuum reaction chamber containing a dielectric barrier discharge lamp;
Figure 2A is a "before" picture of a metallic article before application of the present invention; and
Figure 2B is an "after" picture of the metallic article shown in Figure 2A after application of the present invention. DESCRIPTION OF THE EMBODIMENTS
[0011] A better understanding of the present invention may be had by understanding that the ultraviolet photodissociation process produces high molecular breakdown rates of both organic and organometallic materials from the surface of article. The use of a xenon 172 nm wavelength lamp fragments hydrocarbon bonds by the process of intermolecular molecule energy transfer. This method of fragmenting of hydrocarbon bonds, as opposed to an oxidation method, allows for smaller, more volatile species to form at the reaction surface, thereby improving upon the use of an oxidative process for the removal of unwanted organic materials from the surface of the article.
[0012] It has been found that the placement of xenon 172 nm dielectric barrier discharge lamp directly into a vacuum reaction chamber allows the surface of an article within the vacuum reaction chamber to receive higher levels of energy than at atmospheric pressure. The receipt of these higher levels of energy was unattainable in atmospheric conditions because of the majority of energy transferred by the xenon 172 nm dielectric barrier discharge lamp was to the gas phase molecules (N2 and 02) . It has been discovered that the use of a xenon 172 nm dielectric barrier discharge lamp at very low pressures from about 50 mtorr to about 1500 mtorr allows for an extended life of activated oxygen, which is produced by a xenon 172 nm dielectric barrier discharge lamp (03 - 02 + O) or (202 -> 03 + 0) . The production of activated atomic oxygen 0, which is a strong oxidizing agent, accelerates the overall reaction rate and creates a volatile species, which is removed by the vacuum system. The ozone 03 and activated atomic oxygen O react with the organic and organometallic materials that have broken bonds via the intermolecular molecule energy transfer from the xenon 172 nm dielectric barrier discharge lamp.
[0013] To implement the use of a xenon 172-nm dielectric barrier discharge lamp in a vacuum reaction chamber, the lamp must have the structural strength to be placed in a low- pressure environment and encapsulate the xenon gas in an excimer state. In the preferred embodiment, and as shown in Figure 1, a vacuum reaction chamber 20 is constructed with single or multiple lamp 172 nm lamp sources 22, vacuum inlet ports 24, particle gas inlet ports 26, a single wafer or reticle stage 28, and TC or thermogauge inlets 30. The system for producing vacuum within the vacuum reaction chamber 20 includes a two-stage 300 L/min pump 30 or some variation thereof .
[0014] In the preferred embodiment of the system described, the photodissociation process caused by the UV light source performs the below resist etches.
[0015] According to the photos attached at Figures 2A and 2B, the system and method of the present invention removes polymers created by the metal etch process along with the complete removal of the photoresist material such as a SPR-700 Shipley photoresist material. The sample which appears in the photographs at Figures 2A and 2B is a Silicon wafer that contains a IK of titanium, 3K of titanium tungsten, plus 6K of aluminum with 0.5% copper (lKTi/3K TiW w/ 6 K Al Cu 0.5%) that was etched with a Lam Researcher Corporation etcher with no pacification process.
[0016] The system and method of the present invention not only removes sidewall polymer and photoresist material from the surface of the article in a dry environment, but allow for such removal without damaging the article surfaces. [0017] While the present system and method has been disclosed according to the preferred embodiment of the invention, those of ordinary skill in the art will understand that other embodiments have also been enabled. Such other embodiments shall fall within the scope and meaning of the appended claims .

Claims

CLAIMS :
1. A system for removing organic or organometallic materials from an article comprising: an enclosed vacuum reaction chamber constructed and arranged to contain an article having organic or organometallic materials located therein; said enclosed vacuum reaction chamber containing an oxygen-containing gas, wherein the vacuum pressure within said enclosed vacuum reaction chamber is between about 50 mtorr and about 1500 mtorr; means for emitting vacuum ultraviolet rays having a wavelength of about 172 nm contained within said enclosed vacuum reaction chamber; wherein said emitted vacuum ultraviolet rays fragment the hydrocarbon bonds in said organic or organometallic materials; wherein said oxygen-containing gas within said enclosed vacuum reaction chamber and said emitted vacuum ultraviolet rays photochemically react to produce ozone and activated oxygen; and wherein said ozone and said activated oxygen react with said fragments of said organic and organometallic materials .
2. The system as defined in Claim 1, wherein said means for emitting vacuum ultraviolet rays is one or more dielectric barrier discharge lamps.
3. The system as defined in Claim 2, wherein said one or more dielectric barrier discharge lamps contain xenon gas in an excimer state.
4. A system for removing organic and organometallic materials from an article comprising: a vacuum reaction chamber in which the vacuum pressure is from about 50 mtorr to 1500 mtorr, said vacuum reaction chamber containing oxygen-containing gas and at least one article having organic or organometallic materials located thereon; means for emitting vacuum ultraviolet rays having a wavelength of about 172 nm contained within said vacuum reaction chamber; whereby when said vacuum ultraviolet rays are emitted within said vacuum reaction chamber the hydrogen bonds in said organic or organometallic materials are fragmented and oxygen-containing gas is broken down to produce ozone and activated oxygen; and said ozone and said activated oxygen combine with said fragmented portions of said organic and organometallic materials .
5. The system as defined in Claim 4, wherein said means for emitting vacuum ultraviolet rays is one or more dielectric barrier discharge lamps.
6. The system as defined in Claim 5, wherein said one or more dielectric barrier discharge lamps contain xenon gas in an excimer state.
7. A method for removing organic or organometallic materials from an article, said method comprising the steps of: creating a vacuum of about 50 mtorr to about 1500 mtorr in an oxygen-containing gas in a chamber; placing an article containing organic or organometallic materials in said oxygen-containing gas within said chamber; irradiating said organic or organometallic materials with vacuum ultraviolet rays having a wavelength of about 172 nm to induce an intermolecular molecule energy transfer to said organic or organometallic material, whereby said intermolecular molecule energy transfer results in a cleaving of at least one of the hydrogen bonds within said organic or organometallic material; irradiating said oxygen-containing gas to create ozone and activated oxygen; and allowing said ozone and said activated oxygen to combine with said cleaved portions of said organic or organometallic material.
8. The method as defined in Claim 7, wherein said ozone and said activated oxygen are produced by a photochemical reaction.
9. The method as defined in Claim 7, wherein one or more dielectric barrier discharge lamps are used to produce said vacuum ultraviolet rays.
10. The method as defined in Claim 9, wherein said one or more dielectric barrier discharge lamps encapsulate xenon gas in an excimer state.
11. An article from which organic or organometallic materials have been removed, said article being produced by a process including the steps of : a) creating a vacuum of about 50 mtorr to about 1500 mtorr in a chamber containing an oxygen-containing gas; b) placing an article including the organic or organometallic materials in said chamber; c) irradiating said organic or organometallic materials and said oxygen-containing gas within said chamber with vacuum ultraviolet light rays having a wavelength of about 172 nm; and d) removing said organic or organometallic materials from said article utilizing the ozone and activated oxygen produced in step c) .
12. The article as defined in Claim 11, wherein said ozone and said activated oxygen are produced by a photochemical reaction.
13. The article as defined in Claim 11 wherein said step for irradiating said oxygen-containing gas utilizes at least one dielectric barrier discharge lamp.
14. The article as defined in Claim 13 wherein said one or more dielectric barrier discharge lamps contain xenon gas in an excimer state.
15. A system for removing the organic or organometallic material from an article in a dry environment, said system comprising: an enclosed vacuum reaction chamber constructed and arranged to contain an article having organic or organometallic material on its surface and on its sidewalls; said enclosed vacuum reaction chamber containing an oxygen-containing gas wherein the vacuum pressure is between about 50 mtorr and about 1500 mtorr; an irradiation device for emitting vacuum ultraviolet rays having a wavelength of about 172 nm contained within said enclosed vacuum reaction chamber to induce an intermolecular molecule energy transfer to said organic or organometallic material and to create ozone and activated oxygen from said oxygen-containing gas; and wherein said ozone and said activated oxygen removes said organic or organometallic material from said surface and said sidewalls of said article.
16. The system as defined in Claim 15 wherein said irradiation device is one or more dielectric barrier discharge lamps;
17. The system as defined in Claim 16 wherein said one or more dielectric barrier discharge lamps contains xenon gas in an excimer state.
18. A method for removing the sidewall polymer and photoresist from an article, said method comprising the steps of : creating a vacuum of about 50 mtorr to about 1500 mtorr in a vacuum reaction chamber; placing an article having sidewall polymer and photoresist in said vacuum reaction chamber; irradiating said vacuum reaction chamber with vacuum ultraviolet light rays having a wavelength of about 172 nm to produce ozone and activated oxygen for removing said polymer and photoresist from said article.
19. The method as defined in Claim 18 wherein step for irradiating said vacuum reaction chamber is performed by at least one dielectric barrier discharge lamp.
20. The method as defined in Claim 19 wherein said dielectric barrier discharge lamp includes a xenon gas in an excimer state.
21. An apparatus for dissociating molecular bonds in a vacuum comprising: a dielectric barrier discharge lamp capable of withstanding pressures between about 50 mtorr and 1500 mtorr.
22. An apparatus according to Claim 21 wherein said dielectric barrier discharge lamp includes a xenon gas in an excimer state.
23. An apparatus according to Claim 21 wherein said dielectric barrier discharge lamp emits wavelengths at approximately 172 nm.
PCT/US2003/029733 2002-09-20 2003-09-22 System and method for removal of materials from an article WO2004027810A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003272613A AU2003272613A1 (en) 2002-09-20 2003-09-22 System and method for removal of materials from an article
EP03754805A EP1573771A4 (en) 2002-09-20 2003-09-22 System and method for removal of materials from an article

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41260402P 2002-09-20 2002-09-20
US60/412,604 2002-09-20

Publications (2)

Publication Number Publication Date
WO2004027810A2 true WO2004027810A2 (en) 2004-04-01
WO2004027810A3 WO2004027810A3 (en) 2005-09-29

Family

ID=32030914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/029733 WO2004027810A2 (en) 2002-09-20 2003-09-22 System and method for removal of materials from an article

Country Status (4)

Country Link
US (2) US20040108059A1 (en)
EP (1) EP1573771A4 (en)
AU (1) AU2003272613A1 (en)
WO (1) WO2004027810A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101875048A (en) * 2010-06-30 2010-11-03 国电光伏(江苏)有限公司 Method for removing impurities on surface of silicon chip

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8240539B2 (en) * 2004-05-28 2012-08-14 Panasonic Corporation Joining apparatus with UV cleaning
US20080302400A1 (en) * 2007-06-05 2008-12-11 Thomas Johnston System and Method for Removal of Materials from an Article
WO2009146744A1 (en) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Method for treating surfaces, lamp for said method, and irradiation system having said lamp
US8980751B2 (en) * 2010-01-27 2015-03-17 Canon Nanotechnologies, Inc. Methods and systems of material removal and pattern transfer
US20150206798A1 (en) * 2014-01-17 2015-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect Structure And Method of Forming
JP7304768B2 (en) * 2019-08-16 2023-07-07 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment equipment and method for cleaning heat treatment equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6409842B1 (en) * 1999-11-26 2002-06-25 Heraeus Noblelight Gmbh Method for treating surfaces of substrates and apparatus

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910436A (en) * 1988-02-12 1990-03-20 Applied Electron Corporation Wide area VUV lamp with grids and purging jets
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US4980198A (en) * 1989-11-30 1990-12-25 Syracuse University Laser CVD and plasma CVD of CrO2 films and cobalt doped CrO2 films using organometallic precursors
DE4113523A1 (en) * 1991-04-25 1992-10-29 Abb Patent Gmbh METHOD FOR TREATING SURFACES
TW260806B (en) * 1993-11-26 1995-10-21 Ushio Electric Inc
JPH0864559A (en) * 1994-06-14 1996-03-08 Fsi Internatl Inc Method of deleting unnecessary substance from substrate surface
US5709754A (en) * 1995-12-29 1998-01-20 Micron Technology, Inc. Method and apparatus for removing photoresist using UV and ozone/oxygen mixture
JP3500050B2 (en) * 1997-09-08 2004-02-23 東京エレクトロン株式会社 Impurity removing device, film forming method and film forming system
US6015759A (en) * 1997-12-08 2000-01-18 Quester Technology, Inc. Surface modification of semiconductors using electromagnetic radiation
US6192897B1 (en) * 1999-01-27 2001-02-27 Euv Llc Apparatus and method for in-situ cleaning of resist outgassing windows
JP2000294530A (en) * 1999-04-06 2000-10-20 Nec Corp Method for cleaning semiconductor substrate and its cleaner
US6533952B2 (en) * 1999-06-08 2003-03-18 Euv Llc Mitigation of radiation induced surface contamination
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6409842B1 (en) * 1999-11-26 2002-06-25 Heraeus Noblelight Gmbh Method for treating surfaces of substrates and apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1573771A2 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101875048A (en) * 2010-06-30 2010-11-03 国电光伏(江苏)有限公司 Method for removing impurities on surface of silicon chip

Also Published As

Publication number Publication date
AU2003272613A1 (en) 2004-04-08
EP1573771A4 (en) 2007-10-31
US20060180173A1 (en) 2006-08-17
AU2003272613A8 (en) 2004-04-08
WO2004027810A3 (en) 2005-09-29
EP1573771A2 (en) 2005-09-14
US20040108059A1 (en) 2004-06-10

Similar Documents

Publication Publication Date Title
TW540114B (en) Substrate cleaning apparatus and method
US6715498B1 (en) Method and apparatus for radiation enhanced supercritical fluid processing
US20060180173A1 (en) System and method for removal of materials from an article
JP5217951B2 (en) Resist removing method and apparatus
EP2166564B1 (en) Method for removing a hardened photoresist from a semiconductor substrate
JP4952375B2 (en) Resist removing method and apparatus
JP5101442B2 (en) Improved plasma chamber wall cleaning by adding a noble gas cleaning step
CN107180774B (en) System and method for gas phase hydroxyl radical processing of substrates
KR970077317A (en) Dry Etcher Residual Gas Removal Apparatus and Method
JP4968028B2 (en) Resist remover
JPH04159718A (en) Copper etching process using halide substance
US20080302400A1 (en) System and Method for Removal of Materials from an Article
Choi et al. Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O3 and ECR oxygen plasma cleaning methods
WO2001052309A1 (en) Method of surface preparation
Falkenstein Surface cleaning mechanisms utilizing VUV radiation in oxygen-containing gaseous environments
JPH0885861A (en) Oxidation of surface of body to be treated or material on the same surface under reduced pressure
JP2011192764A (en) Method of removing film, and device for film removal
JP2579346Y2 (en) Ashing device for resist film
JPH077003A (en) Treatment method
JP2010123739A (en) Decompression treatment vessel
JPH05198498A (en) Ashing device for resist film
JPH01189123A (en) Removing method for polymer resin film
KR20170037616A (en) Method and station for treatment of a plastic transport box for conveyance and atmospheric storage of substrates
US20060078481A1 (en) System and method for corrosive vapor reduction by ultraviolet light
JPS63117424A (en) Substrate surface treatment device and substrate surface treatment method

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003754805

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2003754805

Country of ref document: EP

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP