WO2004023651A1 - Control circuit for a high-frequency amplifier - Google Patents
Control circuit for a high-frequency amplifier Download PDFInfo
- Publication number
- WO2004023651A1 WO2004023651A1 PCT/DE2003/001981 DE0301981W WO2004023651A1 WO 2004023651 A1 WO2004023651 A1 WO 2004023651A1 DE 0301981 W DE0301981 W DE 0301981W WO 2004023651 A1 WO2004023651 A1 WO 2004023651A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- control circuit
- impedance
- diodes
- circuit according
- transformation
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
- H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
- H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
- H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
Definitions
- the invention is based on a control circuit for a high-frequency amplifier, in particular an antenna amplifier.
- PI ⁇ diode attenuators To improve the modulation strength of AM, FM and TN antenna amplifiers, power controls with PI ⁇ diode attenuators are used. For example, simple shunt diodes with lower attenuation or complex PI or T-PI ⁇ diode attenuators are used.
- an antenna amplifier with a controllable actuator in the form of a PI ⁇ diode is known.
- an adaptation network is provided in front of and behind the PI ⁇ diode.
- GB 2266422 A shows a damping stage with a PI ⁇ diode in the longitudinal branch. This is preceded by another PI ⁇ diode in the shunt arm to reduce the input impedance.
- a similar damping stage is known from EP 0969596 A 2. There the control signal for the diodes from the
- the control dynamics in a high-frequency amplifier / antenna amplifier can be increased in a simple and inexpensive manner.
- an additional PIN diode is connected in the supply voltage branch of the actual actuator PIN diode in the transverse branch, which is short-circuited to ground in terms of radio frequency, that is to say preferably capacitively, and is supplied directly by the control signal / control voltage.
- the two preferably low-resistance PIN diodes are connected via a transformation network in the series branch, which preferably transforms a low-resistance input impedance into a high-resistance output impedance, so that the damping effect is increased.
- the control circuit is characterized by a high level of modulation resistance and a very high control range, with control via a single control current
- the amplifier is protected against ESD interference by preferably high-frequency anti-parallel connection of the PIN diodes.
- Figure 1 Block diagram of a control circuit according to the invention for a
- Antenna amplifier Figure 2: The control circuit in detail,
- Figure 3 The formation of the transformation network of the control circuit as a T element
- Figure 4 The formation of the transformation network of the control circuit as a PI element.
- an antenna signal reaches a matching network 6 from a pane antenna 5, with which the antenna 5 is matched to the input impedance of the amplifier 7.
- the antenna signal is then transmitted via the input PIN
- Diode attenuator 10 led to the amplifier 7. Behind the amplifier 7 the amplified antenna signal is coupled out and fed to a detector 8. Here the signal strength is measured, compared with a reference signal by means of a comparison device 4 and a current proportional to the power is generated. This current (control signal) for the PIN diodes 1 and 2, supplied via point 16 in FIG.
- Attenuator as well as another, located in the supply voltage branch, output-side, also low-resistance PIN diode 2 switched through ( Figure 2). As long as the output power is below the reference power and thus the intermodulation products of the amplifier 7 are still low, the current remains at 0 mA and the diodes 1 and 2 have a high resistance. In this operating state
- This transformation network 3 is permeable to the control current, since a galvanic connection between the PIN diodes 1 and 2 is always provided in its longitudinal branch.
- T-circuits (FIG. 3) with 2 coils 11 and 12 in the longitudinal branch and a capacitor 13 in the transverse branch or PI circuits (FIG. 4) with a coil 14 in the longitudinal branch and a capacitor 15 on the input and output side are suitable as the transformation network 3 16 in the transverse branch.
- Shunt diodes which are relatively low-resistance and have a lower attenuation than conventional PIN diodes are preferably suitable as PDSf diodes D1 and D2.
- the PIN diodes are preferably operated antiparallel in the control circuit with regard to their polarity.
- control dynamics of> 30 dB can be achieved. This results in a significantly increased modulation resistance of approximately 20 dB compared to conventional solutions.
- the attenuation control based on the sensation can be used for AM, FM and TV impedance converters for antenna amplifiers.
Abstract
The invention relates to a control circuit for a high-frequency amplifier, said circuit comprising an input-side PIN diode (1) which is located in the shunt arm and an output-side PIN diode (2) which is also located in the shunt arm and receives a control signal. A transformation system (3) is provided between the PIN diodes (1, 2) in the series arm. Both diodes receive the same control signal.
Description
Regelschaltung für einen HochfrequenzverstärkerControl circuit for a high frequency amplifier
Die Erfindung geht aus von einer Regelschaltung für einen Hochfrequenzverstärker, insbesondere einen Antennenverstärker.The invention is based on a control circuit for a high-frequency amplifier, in particular an antenna amplifier.
Stand der TechnikState of the art
Um die Aussteuerfestigkeit von AM-, FM- und TN-Antennenverstärkern zu verbessern, werden Leistungsregelungen mit PIΝ-Diodendämpfungsgliedern eingesetzt. Es werden beispielsweise einfache Shunt-Dioden mit geringerer Dämpfung oder komplexe PI- bzw. T-PIΝ-Diodendämpfungsglieder verwendet.To improve the modulation strength of AM, FM and TN antenna amplifiers, power controls with PIΝ diode attenuators are used. For example, simple shunt diodes with lower attenuation or complex PI or T-PIΝ diode attenuators are used.
Aus der WO 01/73946 ist ein Antennenverstärker mit einem regelbaren Stellglied in Form einer PIΝ-Diode bekannt. Zur Vergrößerung des Intermodulationsabstandes im Regelbereich ist jeweils ein Anpassungsnetzwerk vor und hinter der PIΝ-Diode vorgesehen.From WO 01/73946 an antenna amplifier with a controllable actuator in the form of a PIΝ diode is known. To increase the intermodulation distance in the control range, an adaptation network is provided in front of and behind the PIΝ diode.
Die GB 2266422 A zeigt eine Dämpfungsstufe mit einer PIΝ-Diode im Längszweig. Dieser ist eine weitere PIΝ-Diode im Querzweig vorgeschaltet, um die Eingangsimpedanz zu reduzieren. Eine ähnliche Dämpfungsstufe ist aus der EP 0969596 A 2 bekannt. Dort wird das Steuersignal für die Dioden aus demGB 2266422 A shows a damping stage with a PIΝ diode in the longitudinal branch. This is preceded by another PIΝ diode in the shunt arm to reduce the input impedance. A similar damping stage is known from EP 0969596 A 2. There the control signal for the diodes from the
Nerstärkerausgangssignal durch Vergleich mit einer Referenzspannung erzeugt.
Vorteile der ErfindungNerärkraft output signal generated by comparison with a reference voltage. Advantages of the invention
Mit den Merkmalen gemäß Anspruch 1 kann die Regeldynamik bei einem Hochfrequenzverstärker/ Antennenverstärker auf einfache und kostengünstige Weise erhöht werden. Bei der Erfindung wird in den Versorgungs-Spannungszweig der eigentlichen Stellglied-PIN-Diode im Querzweig eine zusätzliche PIN-Diode geschaltet, die hochfrequenzmäßig, das heißt vorzugsweise kapazitiv, gegen Masse kurzgeschlossen ist und direkt vom Regelsignal/der Regelspannung versorgt wird. Die beiden vorzugsweise niederohmigen PIN-Dioden sind über ein Transformationsnetzwerk im Längszweig verbunden, das vorzugsweise eine niederohmige Eingangsimpedanz in eine hochohmige Ausgangsimpedanz transformiert, so dass die Dämpfungswirkung verstärkt wird.With the features according to claim 1, the control dynamics in a high-frequency amplifier / antenna amplifier can be increased in a simple and inexpensive manner. In the invention, an additional PIN diode is connected in the supply voltage branch of the actual actuator PIN diode in the transverse branch, which is short-circuited to ground in terms of radio frequency, that is to say preferably capacitively, and is supplied directly by the control signal / control voltage. The two preferably low-resistance PIN diodes are connected via a transformation network in the series branch, which preferably transforms a low-resistance input impedance into a high-resistance output impedance, so that the damping effect is increased.
Die Regelschaltung zeichnet sich durch eine hohe Aussteuerfestigkeit und einen sehr hohen Regelbereich aus, wobei die Ansteuerung über eine einzige Regelstrom-The control circuit is characterized by a high level of modulation resistance and a very high control range, with control via a single control current
/Spannungsquelle erfolgt. Zusätzlich wird durch eine vorzugsweise hochfrequenzmäßige Antiparallelschaltung der PIN-Dioden der Verstärker gegen ESD-Störungen geschützt./ Voltage source is used. In addition, the amplifier is protected against ESD interference by preferably high-frequency anti-parallel connection of the PIN diodes.
Zeichnungendrawings
Anhand der Zeichnungen werden Ausführungsbeispiele der Erfindung erläutert.Exemplary embodiments of the invention are explained on the basis of the drawings.
Es zeigen:Show it:
Figur 1 : Blockschaltbild einer Regelschaltung nach der Erfindung für einenFigure 1: Block diagram of a control circuit according to the invention for a
Antennenverstärker, Figur 2: Die Regelschaltung im Detail,Antenna amplifier, Figure 2: The control circuit in detail,
Figur 3: Die Ausbildung des Transformationsnetzwerkes der Regelschaltung als T-Glied, Figur 4: Die Ausbildung die Transformationsnetzwerkes der Regelschaltung als PI-Glied.Figure 3: The formation of the transformation network of the control circuit as a T element, Figure 4: The formation of the transformation network of the control circuit as a PI element.
Beschreibung von AusführungsbeispielenDescription of exemplary embodiments
Gemäß Figur 1 gelangt von einer Scheibenantenne 5 ein Antennensignal auf ein Anpassnetzwerk 6, mit dem die Antenne 5 auf die Eingangsimpedanz des Verstärkers 7 angepasst wird. Nachfolgend wird das Antennensignal über das eingangsseitige PIN-According to FIG. 1, an antenna signal reaches a matching network 6 from a pane antenna 5, with which the antenna 5 is matched to the input impedance of the amplifier 7. The antenna signal is then transmitted via the input PIN
Diodendämpfungsglied 10 zu dem Verstärker 7 geführt. Hinter dem Verstärker 7 wird
das verstärkte Antennensignal ausgekoppelt und einem Detektor 8 zugeführt. Hier wird die Signalstärke gemessen, mittels einer Vergleichseinrichtung 4 mit einem Referenzsignal verglichen und es wird ein der Leistung proportionaler Strom erzeugt. Mit diesem Strom (Regelsignal) für die PIN-Dioden 1 und 2, zugeführt über Punkt 16 in Figur 2 wird sowohl die eingangsseitige, insbesondere niederohmige PIN-Diode 1 desDiode attenuator 10 led to the amplifier 7. Behind the amplifier 7 the amplified antenna signal is coupled out and fed to a detector 8. Here the signal strength is measured, compared with a reference signal by means of a comparison device 4 and a current proportional to the power is generated. This current (control signal) for the PIN diodes 1 and 2, supplied via point 16 in FIG
Dämpfungsgliedes als auch eine weitere, im Versorgungsspannungszweig gelegene, ausgangsseitige, ebenfalls niederohmige PIN-Diode 2 durchgeschaltet (Figur 2). Solange die Ausgangsleistung unter der Referenzleistung ist und somit die Intermodulationsprodukte des Verstärker 7 noch gering sind, bleibt der Strom bei 0 mA und die Dioden 1 und 2 sind hochohmig. In diesem Betriebszustand ist dieAttenuator as well as another, located in the supply voltage branch, output-side, also low-resistance PIN diode 2 switched through (Figure 2). As long as the output power is below the reference power and thus the intermodulation products of the amplifier 7 are still low, the current remains at 0 mA and the diodes 1 and 2 have a high resistance. In this operating state
Durchgangsdämpfung der Regelschaltung sehr gering und es wird keine zusätzliche Entkopplung zum Detektor 8 benötigt. Bei einer Erhöhung der Eingangsleistung steigt der Strom so weit, bis die Referenzausgangsleistung ausgeregelt ist. Durch die Stromerhöhung werden die Dioden 1 und 2 niederohmiger, so dass die Leistung gegen Masse abgeleitet wird. Dabei ist die PIN-Diode 1 direkt gegen Masse geschaltet, während die weitere PIN-Diode 2 nur für das Hochfrequenz-Signal über den Kondensator 9 kapazitiv gegen Masse und damit hochfrequenzmäßig kurzgeschlossen ist. Die beiden PIN-Dioden 1 und 2 sind über ein Transformationsnetzwerk 3 verbunden, welches eine breitbandige Lambda/4-Impedanztransformation (Transformation von niederohmig auf hochohmig) bewirkt, so dass die maximale Gesamtdämpfung der PIN-Dioden 1 und 2 erhöht wird. Dieses Transformationsnetzwerk 3 ist für den Regelstrom durchlässig, da in seinem Längszweig immer eine galvanische Verbindung zwischen den PIN-Dioden 1 und 2 vorgesehen ist. Als Transformationsnetzwerk 3 sind beispielsweise T-Schaltungen (Figur 3) geeignet mit 2 Spulen 11 und 12 im Längszweig und einem Kondensator 13 im Querzweig oder Pl-Schaltungen (Figur 4) mit einer Spule 14 im Längszweig und einem eingangs- und ausgangsseitigen Kondensator 15 bzw. 16 im Querzweig.Through loss of the control circuit is very low and no additional decoupling from the detector 8 is required. When the input power increases, the current increases until the reference output power is corrected. Due to the current increase, diodes 1 and 2 have a lower resistance, so that the power is diverted to ground. Here, the PIN diode 1 is connected directly to ground, while the further PIN diode 2 is capacitively shorted to ground and thus high-frequency only for the high-frequency signal via the capacitor 9. The two PIN diodes 1 and 2 are connected via a transformation network 3, which brings about a broadband lambda / 4 impedance transformation (transformation from low-resistance to high-resistance), so that the maximum total attenuation of the PIN diodes 1 and 2 is increased. This transformation network 3 is permeable to the control current, since a galvanic connection between the PIN diodes 1 and 2 is always provided in its longitudinal branch. T-circuits (FIG. 3) with 2 coils 11 and 12 in the longitudinal branch and a capacitor 13 in the transverse branch or PI circuits (FIG. 4) with a coil 14 in the longitudinal branch and a capacitor 15 on the input and output side are suitable as the transformation network 3 16 in the transverse branch.
Als PDSf-Dioden Dl und D2 eignen sich vorzugsweise Shunt-Dioden, die relativ niederohmig sind und eine geringere Dämpfung als herkömmliche PIN-Dioden aufweisen. Die PIN-Dioden werden vorzugsweise bezüglich ihrer Polarität antiparallel in der Regelschaltung betrieben.Shunt diodes which are relatively low-resistance and have a lower attenuation than conventional PIN diodes are preferably suitable as PDSf diodes D1 and D2. The PIN diodes are preferably operated antiparallel in the control circuit with regard to their polarity.
Mit der erfmdungsgemäßen Regelschaltung läßt sich eine Regeldynamik von > 30 dB erreichen. Dadurch ergibt sich eine deutlich erhöhte Aussteuerfestigkeit von ca. 20 dB gegenüber herkömmlichen Lösungen.
Die Dämpfungsregelung nach der Empfindung kann sowohl bei AM-, FM- als auch bei TV -Impedanzwandlern für Antennenverstärker eingesetzt werden.
With the control circuit according to the invention, control dynamics of> 30 dB can be achieved. This results in a significantly increased modulation resistance of approximately 20 dB compared to conventional solutions. The attenuation control based on the sensation can be used for AM, FM and TV impedance converters for antenna amplifiers.
Claims
1. Regelschaltung für einen Hochfrequenzverstärker, insbesondere Antennenverstärker, mit folgenden Baueinheiten:1. Control circuit for a high-frequency amplifier, in particular antenna amplifier, with the following components:
- Einer eingangsseitigen, insbesondere niederohmigen PIN-Diode (1) im Querzweig,An input-side, in particular low-resistance, PIN diode (1) in the transverse branch,
- Einem Transformationsnetzwerk (3) im Längszweig,- A transformation network (3) in the longitudinal branch,
- Einer ausgangsseitigen, insbesondere niederohmigen PIN-Diode (2) im Querzweig, welche mit einem Regelsignal beaufschlagbar ist, welche hochfrequenzmäßig gegen Masse kurzschließbar ist und welche über das Transformationsnetzwerk (3) galvanisch mit der eingangsseitigen PIN-Diode (1) verbunden ist.- An output-side, in particular low-impedance PIN diode (2) in the shunt arm, which can be acted upon with a control signal, which can be short-circuited to ground in terms of radio frequency and which is galvanically connected to the input-side PIN diode (1) via the transformation network (3).
2. Regelschaltung nach Anspruch 1 dadurch gekennzeichnet, dass das Transformationsnetzwerk (3) im Längszweig so ausgebildet ist, dass eine Impedanztransformation, ausgehend von einer niederohmigen Eingangsimpedanz, in eine hochohmige Ausgangsimpedanz erzielbar ist.2. Control circuit according to claim 1, characterized in that the transformation network (3) is formed in the longitudinal branch so that an impedance transformation, starting from a low-impedance input impedance, can be achieved in a high-impedance output impedance.
3. Regelschaltung nach Anspruch 1 oder 2 dadurch gekennzeichnet, dass zur Erzeugung des Regelsignals eine Vergleichseinrichtung (4) vorgesehen ist, mit welcher das Ausgangssignal, insbesondere die Ausgangsleistung des Hochfrequenzverstärkers (5), mit einem Referenzsignal vergleichbar ist.3. Control circuit according to claim 1 or 2, characterized in that a comparison device (4) is provided for generating the control signal, with which the output signal, in particular the output power of the high-frequency amplifier (5), is comparable to a reference signal.
4. Regelschaltung nach einem der Ansprüche Ibis 3 dadurch gekennzeichnet, dass die beiden PIN-Dioden (1,2) hochfrequenzmäßig antiparallel geschaltet sind. 4. Control circuit according to one of claims 3, characterized in that the two PIN diodes (1, 2) are connected in antiparallel in terms of radio frequency.
5. Regelschaltung nach einem der Ansprüche 1 bis 4 dadurch gekennzeichnet, dass das Transformationsnetzwerk (3) aus einer PI- oder T-Schaltung besteht, die insbesondere so ausgestaltet ist, dass eine Lambda/4-Transformation erzielbar ist.5. Control circuit according to one of claims 1 to 4, characterized in that the transformation network (3) consists of a PI or T circuit, which is designed in particular so that a lambda / 4 transformation can be achieved.
6. Regelschaltung nach einem der Ansprüche 1 bis 5 dadurch gekennzeichnet, dass die PIN-Dioden (1,2) als Shunt-Dioden realisiert sind. 6. Control circuit according to one of claims 1 to 5, characterized in that the PIN diodes (1,2) are realized as shunt diodes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2002140496 DE10240496A1 (en) | 2002-09-03 | 2002-09-03 | Control circuit for a high-frequency amplifier |
| DE10240496.8 | 2002-09-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2004023651A1 true WO2004023651A1 (en) | 2004-03-18 |
Family
ID=31502284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE2003/001981 WO2004023651A1 (en) | 2002-09-03 | 2003-06-13 | Control circuit for a high-frequency amplifier |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE10240496A1 (en) |
| WO (1) | WO2004023651A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1578017A3 (en) * | 2004-03-19 | 2006-06-28 | Feig Electronic GmbH | Electronic switch for high-frequency connections |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005013123B4 (en) * | 2004-03-19 | 2007-09-13 | Feig Electronic Gmbh | Electronic switch for high-frequency connections |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4754240A (en) * | 1985-11-20 | 1988-06-28 | Gte Telecomunicazioni, S.P.A. | Pin diode attenuators |
| EP0667684A1 (en) * | 1994-02-09 | 1995-08-16 | Lk-Products Oy | A transceiver with an arrangement for separating transmission and reception signals |
| EP0713288A2 (en) * | 1994-11-17 | 1996-05-22 | AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL INC. | Radio frequency detector circuit |
| US20020105391A1 (en) * | 2000-04-19 | 2002-08-08 | Yasuo Yamada | Filter, antenna duplexer, and communication apparatus incorporating the same |
-
2002
- 2002-09-03 DE DE2002140496 patent/DE10240496A1/en not_active Ceased
-
2003
- 2003-06-13 WO PCT/DE2003/001981 patent/WO2004023651A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4754240A (en) * | 1985-11-20 | 1988-06-28 | Gte Telecomunicazioni, S.P.A. | Pin diode attenuators |
| EP0667684A1 (en) * | 1994-02-09 | 1995-08-16 | Lk-Products Oy | A transceiver with an arrangement for separating transmission and reception signals |
| EP0713288A2 (en) * | 1994-11-17 | 1996-05-22 | AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL INC. | Radio frequency detector circuit |
| US20020105391A1 (en) * | 2000-04-19 | 2002-08-08 | Yasuo Yamada | Filter, antenna duplexer, and communication apparatus incorporating the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1578017A3 (en) * | 2004-03-19 | 2006-06-28 | Feig Electronic GmbH | Electronic switch for high-frequency connections |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10240496A1 (en) | 2004-03-11 |
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