WO2004023210A1 - Method for producing a pattern formation mold - Google Patents
Method for producing a pattern formation mold Download PDFInfo
- Publication number
- WO2004023210A1 WO2004023210A1 PCT/JP2003/011028 JP0311028W WO2004023210A1 WO 2004023210 A1 WO2004023210 A1 WO 2004023210A1 JP 0311028 W JP0311028 W JP 0311028W WO 2004023210 A1 WO2004023210 A1 WO 2004023210A1
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- WO
- WIPO (PCT)
- Prior art keywords
- pattern formation
- pattern
- resist film
- radiation
- formation mold
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3218—Carbocyclic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Definitions
- the present invention relates to a method for producing a pattern formation mold. More particularly, the invention relates to a method for producing a pattern formation mold which is suitably employed as a technique that can be applied to, for example, a photolithography step included in the LIGA process and capable of readily producing a pattern formation mold for producing a pattern having a high aspect ratio (hereinafter referred to as a high-aspect pattern) with high precision.
- a high-aspect pattern a high aspect ratio
- the LIGA process has been employed as a technique for producing microparts .
- the LIGA process is a technique which includes a lithography step for forming a resist pattern matching the pattern of a target part, an electrofor ing step for forming a metal pattern, and a resin molding step employing the metal pattern, to thereby produce microparts on a large scale.
- the LIGA process is explained in Chapter 1 of the book entitled “LIGA Process” (published by The Nikkan Kogyo Shimbun, Ltd.) , and techniques of process elements thereof are disclosed in Chapter 2 of the same book.
- a very thick resist film having a thickness of generally more than 50 ⁇ m, in some cases more than 100 ⁇ is processed to form a high-aspect pattern.
- the type of the active energy beam employed in the lithography step is limited, and an X-ray based on synchrotron radiation or obtained by other means is generally employed.
- PMMA polymethyl methacrylate
- Japanese Patent Publication (kokoku) No. 7-78628 discloses that a resist material, SU-8 (trade name, negative-type resist) , can be used in the LIGA process.
- the material SU-8 is a composition to be cured through photo-cationic polymerization and contains an epoxy resin and a radiation-sensitive cationic polymerization initiator. As compared with an acrylate-based composition to be cured through radical photopolymerization, SU-8 is known to undergo less shrinkage during curing reaction. Thus, SU-8 is suited for the LIGA process for processing a very thick film.
- the PMMA coating method includes considerably cumbersome steps, and the precision in film thickness is poor, since methyl methacrylate (monomer) is polymerized on a substrate.
- methyl methacrylate monomer
- the process cannot be employed in practice, in view of a considerably long process time.
- PMMA has a problem of insensitivity to a generally used light source; i.e., a high-pressure mercury lamp.
- Synchrotron radiation advantageously attains considerably high pattern precision, but is not an advantageous light source, in view that it requires a large-scale apparatus .
- SU-8 having considerably high sensitivity to a high- pressure mercury lamp and excellent patterning characteristics, also has a problem in that it exhibits intense absorption in a deep UV region (wavelength: ⁇ 300 nm) attributed to an aromatic ring included in the skeleton of novolak epoxy resin used in the material, imposing a limitation on the wavelength of exposure light.
- a deep UV region wavelength: ⁇ 300 nm
- Studies conducted in recent years have confirmed that, in semiconductor microprocessing, shifting the wavelength of exposure light to a shorter wavelength in the UV region effectively enhances pattern precision. Therefore, another demerit of SU-8 is that it cannot be used in the deep UV region.
- a cationic initiator must be selected in accordance with light absorption (transparency) of the resin. Since most commercial cationic initiators have absorption bands similar in wavelength range to those of novolak epoxy resin, the initiator must be selected from a limited range of commercial cationic initiators, and this is also problematic.
- Some commercially available monomer products for producing an aliphatic epoxy resin have no aromatic group. Examples include glycidyl (meth) acrylate, CYCLOMER A200 and CYCLOMER MlOO ( (meth) crylate having an aliphatic epoxy group, products of Daicel Chemical Industries, Ltd.), and Celloxide 2000 (l-vinyl-3 , 4-epoxycyclohexane, product of Daicel Chemical Industries, Ltd.) . These monomers are polymerized through radical polymerization or a similar method, to thereby synthesize epoxy resins.
- (meth) acrylates such as glycidyl (meth) acrylate, CYCLOMER A200, and CYCLOMER MlOO have a (meth) acrylate ester backbone and are known to have relatively high sensitivity to high-energy active beams such as electron beams, deep UV rays, and X-rays.
- high-energy active beams such as electron beams, deep UV rays, and X-rays.
- (meth) acrylates are irradiated with any such active beams, a side reaction other than the target epoxy-group- poly erization occurs in the backbone, greatly varying and affecting physical properties (e.g., patterning characteristics, sensitivity to exposure, characteristics of cured products) of the produced resins. Thus, such a high sensitivity is not preferred.
- Celloxide 2000 has no (meth) acrylate backbone, but raises concerns over its toxicity. Therefore, it must be used under strict control, which is also problematic.
- an object of the present invention is to provide a method for producing a pattern formation mold formed of metal, resin, etc. from a high- aspect pattern having high pattern precision, the high-aspect pattern being produced through a method in which a resist composition can be applied to a substrate in a simple manner so as to accurately control film thickness (e.g., spin coating) ; the target level of pattern precision and the light source for exposure can be selected from wide ranges; and high productivity is attained by virtue of requirement of a short exposure time.
- a resist composition can be applied to a substrate in a simple manner so as to accurately control film thickness (e.g., spin coating) ; the target level of pattern precision and the light source for exposure can be selected from wide ranges; and high productivity is attained by virtue of requirement of a short exposure time.
- the present inventors have carried out extensive studies in order to solve the aforementioned problems, and have found that, when a specific epoxy resin having no (meth) acrylate skeleton is employed in pattern formation, particularly when employed in combination with a specific initiator, there can be produced a pattern formation mold formed of metal, resin, etc. from a high-aspect pattern having high pattern precision, the high-aspect pattern being produced through a method in which a resist composition can be applied to a substrate in a simple manner so as to accurately control film thickness (e.g., spin coating); the target level of pattern precision and the light source for exposure can be selected from wide ranges; and high productivity is attained by virtue of requirement of a short exposure time.
- the present invention has been accomplished on the basis of this finding.
- a first mode of the present invention is drawn to a method for producing a pattern formation mold, characterized in that the method comprises: a first step of applying to a substrate a radiation-sensitive negative-type resist composition containing an epoxy resin represented by formula (1) :
- R 1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100) ; each of ni , n 2 , through nk represents 0 or an integer of 1 to 100; the sum of ni, n 2 , through n ⁇ falls within a range of 1 to 100; and each of "A"s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2) :
- R 2 represents a hydrogen atom, an alkyl group, or an acyl group, herein, an alkyl group and an acyl group preferably have 1 to 20 carbon atoms, respectively
- at least two groups represented by formula (3) are contained in one molecule of the epoxy resin)
- a second step of drying the substrate coated with the radiation-sensitive negative-type resist composition to thereby form a resist film
- a fifth step of developing the heated resist film to thereby remove the unexposed area of the resist film through dissolution, thereby forming a patterned layer
- a second mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to the first mode, wherein the second layer is formed through metal plating.
- a third mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to the first mode, wherein the second layer is formed by casting a photo-curable or heat-curable resin and curing the resin by light or heat.
- a fourth mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to any one of the first to third modes , wherein the resist film formed by drying the radiation-sensitive negative-type resist composition has a softening point falling within a range of 30 to 120°C.
- a fifth mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to any one of the first to fourth modes, wherein the epoxy resin has a softening point of 30°C or higher.
- a sixth mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to any one of the first to fifth modes, wherein the radiation-sensitive cationic polymerization initiator comprises one or more sulfonium salts .
- a seventh mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to any one of the first to sixth modes, wherein the radiation-sensitive cationic polymerization initiator has one or more anion moieties , at least one species of the anion moieties being SbF 6 ⁇ .
- An eighth mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to any one of the first to seventh modes, wherein the radiation-sensitive cationic polymerization initiator has one or more anion moieties , at least one species of the anion moieties being a borate represented by formula (6) :
- a ninth mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to any one of the first to eighth modes, wherein the active energy beam is an X-ray having a wavelength of 0.1 to 5 nm.
- a tenth mode of the present invention is directed to a method for producing a pattern formation mold mentioned in relation to any one of the first to ninth modes , wherein the resist film has a thickness of at least 50 ⁇ m.
- FIGs . 1A to 1C show a procedure for producing a pattern formation mold according to one embodiment of the present invention.
- FIGs. 2A to 2C show a procedure for producing a pattern formation mold according to another embodiment of the present invention.
- a pattern formation mold is produced from a high-aspect pattern which can be formed at high productivity in a simple manner by use. of a variety of light sources .
- the pattern formation mold produced through the production method of the present invention can be employed as a "mold" for forming other parts having a pattern similar to that of the resist pattern.
- the pattern formation mold produced through the production method of the present invention itself can also be used as a part, such as a micromachine or a microchip.
- One characteristic feature of the present invention resides in employment of a particular epoxy resin represented by formula (1) selected from among a number of conventionally ⁇ employed curable resin compositions.
- Japanese Patent Application Laid- Open ⁇ kokal) No. 60-166675 discloses the above epoxy resin
- Japanese Patent Application Laid-Open (kokai) No. 61- 283614 discloses a curable resin composition predominantly containing the epoxy resin and a photo-initiator.
- the latter document discloses that the curable resin composition has been developed only as a UV-curable resin composition, and provides no description about pattern formation by use of the resin composition.
- the document provides no description indicating the method of the present invention; i.e., a method for producing a pattern formation mold formed of metal or a similar material, particularly a method for producing a pattern formation mold including formation of a thick-film pattern performed in the LIGA process. Therefore, those skilled in the art would not easily conceive the effect of the present invention that a pattern formation mold can be beneficially produced by use of a resist pattern having a high aspect ratio which can be formed at high productivity in a simple manner by use of any of a variety of light sources.
- the method for producing a pattern formation mold of the present invention includes : a first step of applying to a substrate a radiation-sensitive negative-type resist composition containing an epoxy resin represented by formula (1), a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein; a second step of drying the substrate coated with the radiation-sensitive negative-type resist composition, to thereby form a resist film; a third step of selectively exposing the formed resist film to an active energy beam according to a desired pattern; a fourth step of heating the exposed resist film so as to enhance a contrast of a pattern to be formed; a fifth step of developing the heated resist film, to thereby remove the unexposed area of the resist film, thereby forming a patterned layer; and a sixth step of applying to the patterned layer with a material other than that of the patterned layer such that spaces present in the patterned layer are filled, at least to some height, with the material, to thereby form a second layer, and removing the second layer, to thereby yield
- the radiation-sensitive negative-type resist composition which is applied to a substrate in the first step contains an epoxy resin represented by formula (1) , a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein.
- an epoxy resin represented by formula (1) e.g., a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein.
- Such a radiation-sensitive negative-type resist composition can be applied to a substrate in a manner which is simple and attains high precision and control in film thickness (e.g., spin coating) .
- No particular limitation is imposed on the softening point of the resist film formed by drying the radiation-sensitive negative-type resist composition, and the softening point preferably falls within a range of 30 to 120°C, more preferably a range of 35 to 100°C, most preferably a range of 40 to 80°C.
- the "softening point” is determined through measurement of the resist film formed through a predetermined drying step.
- the term "resist film formed through a predetermined drying step” refers to a resist film which is obtained by drying a radiation-sensitive negative-type resist composition applied to a substrate so as to control the amount of the solvent remaining in the resist film to 10 wt.% or less.
- the form of the film gradually changes from solid of high viscosity to fluid of low viscosity.
- the temperature at which a specific viscosity is obtained during the softening step is evaluated as the softening point of the resist film formed through drying. Specifically, the temperature is determined in accordance with the method of JIS K 7234.
- the thus-determined softening point of the resist film formed by drying the radiation-sensitive negative-type resist composition varies in accordance with mainly the type and content of the epoxy resin or the radiation-sensitive cationic polymerization initiator, as well as with the type, amount, and other parameters of the solvent remaining during drying or other additives. In other words, when these parameters are modified, the softening point can be controlled.
- the softening point of the resist film which is formed by drying a resist composition so as to control the amount of the solvent remaining in the resist film to 10 wt.% or less preferably falls within a range of 30 to 120°C.
- no particular limitation is imposed on the dryness of the radiation-sensitive negative- type resist composition.
- the amount of solvent remaining in the film after the drying step may exceed 10 wt.% in the second step.
- the aforementioned negative-type resist composition can be processed in the form of thick film having a thickness in excess of 50 ⁇ m.
- removal of a volatile component during the drying step causes reduction in volume of the film, thereby generating stress.
- the stress must be removed. The reason for removing the stress is that, when the resist film has a great thickness, the effect of the stress considerably increases, and defects such as creases, cracks, and foam tend to be generated in the resist film.
- the negative-type resist composition exhibits a softening point of the resist film formed by drying the composition falling within the aforementioned temperature range, the stress generated in the film is relaxed by softening of the resist film during drying, to thereby prevent creases or other defects of the resist film. In addition, generation of folds at room temperature is prevented.
- the polyether-type epoxy resin represented by formula (1) is produced by, for example, reacting 4-vinylcyclohexene- 1-oxide with an organic compound having active hydrogen in the presence of a catalyst, to thereby yield a polyether compound and by partially or completely epoxidizing vinyl groups of the polyether compound by use of an oxidizing agent such as a peracid (e.g., peracetic acid) or a hydroperoxide .
- an oxidizing agent such as a peracid (e.g., peracetic acid) or a hydroperoxide .
- a small amount of acyl groups and similar groups may be introduced to the epoxy resin.
- organic compounds having active hydrogen examples include alcohols (e.g., linear or branched aliphatic alcohols, preferably polyhydric alcohols such as trimethylolpropane) , phenols, carboxylic acids, amines, and thiols .
- organic compounds having active hydrogen preferably have a molecular weight of ten thousand or less.
- a moiety derived by removing active hydrogen from any of organic compounds having active hydrogen serves as R 1 in formula (1) .
- Examples also includes commercially available products (e.g., EHPE-3150 (epoxy equivalent: 170 to 190, softening point: 70 to 90°C, product of Daicel Chemical Industries, Ltd.)).
- the softening point of the epoxy resin represented by formula (1) is preferably 30°C or higher, more preferably 40 to 140°C, since excessively low temperatures tend to generate folds in the dried resist film.
- the radiation-sensitive cationic polymerization initiator contained in the radiation-sensitive negative-type resist composition No particular limitation is imposed on the radiation- sensitive cationic polymerization initiator contained in the radiation-sensitive negative-type resist composition, and a known initiator can be used, so long as the initiator generates an acid upon irradiation with an active energy beam.
- the initiator include sulfonium salts, iodonium salts, phosphonium salts, and pyridinium salts.
- sulfonium salts examples include triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate , bis (4- (diphenylsulfonio) -phenyl) sulfide bis (hexafluorophosphate) , bis (4- (diphenylsulfonio) - phenyl) sulfide bis (hexafluoroantimonate) , 4-di (p- toluyl) sulfonio-4 ' -tert-butylphenylcarbonyl-diphenylsulfide hexafluoroantimonate, 7-di (p-toluyl) sulfonio-2- isopropylthioxanthone hexafluorophosphate , 7-di (p- toluyl) sulfonio-2-is
- iodonium salts examples include diphenyliodonium hexafluorophosphate, diphenyliodonium hexafluoroantimonate, bis (dodecylphenyl) iodonium tetrakis (pentafluorophenyl) borate, and aromatic iodonium salts disclosed in Japanese Patent Application Laid-Open (kokai) No. 6-184170, US Patent No. 4256828, etc.
- Examples of the phosphonium salts include tetrafluorophosphonium hexafluorophosphate , tetrafluorophosphonium hexafluoroantimonate, and aromatic phosphonium salts disclosed in Japanese Patent Application Laid-Open (kokai) No. 6-157624, etc.
- Examples of the pyridinium salts include pyridinium salts disclosed in Japanese Patent No. 2519480, Japanese Patent Application Laid-Open (kokai) No. 5-222112, etc.
- the aforementioned negative-type resist composition can be processed in the form of thick film having a thickness in excess of 50 ⁇ m.
- the radiation-sensitive cationic polymerization initiator preferably includes one or more sulfonium salts, because thermal stability of the negative- type resist composition increases when the composition contains, among the aforementioned radiation-sensitive cationic polymerization initiators, a sulfonium salt.
- At least one of the anion moieties of the radiation- sensitive cationic polymerization initiator is preferably SbF ⁇ " or a borate represented by formula (6) :
- each of xi to x represents an integer of 0 to 5, and the sum xi + x 2 + x 3 + x is 1 or more
- the negative-type resist composition beneficially exhibits a high contrast.
- examples of more preferred borates include tetrakis (pentafluorophenyl) borate .
- the sulfonium salts and iodonium salts may be products that are readily available on the market.
- radiation-sensitive cationic polymerization initiators examples include sulfonium salts such as UVI-6990 and UVI-6974 (products of Union Carbide) and Adeka Optomer SP-170 and Adeka Optomer SP-172 (products of Asahi Denka Kogyo K.K.) and iodonium salts such as PI 2074 (product of Rhodia) .
- the amount of the radiation-sensitive cationic polymerization initiator added to the resist composition is preferably 0.1 to 15 parts by weight, more preferably 1 to 12 parts by weight, based on 100 parts by weight of the epoxy resin .
- the solvent for dissolving therein the epoxy resin contained in the radiation-sensitive negative-type resist composition, and any solvent can be used so long as it can dissolve the epoxy resin.
- the solvent include propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate; alkyl lactate esters such as methyl lactate and ethyl lactate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; 2-heptanone; ⁇ -butyrolactone; alkyl alkoxyprop
- the radiation-sensitive negative-type resist composition containing the aforementioned components preferably has a solid content of 10 to 90 wt.% based on the solvent for dissolving the epoxy resin, more preferably 40 to 85 wt.%, more preferably 60 to 80 wt.%.
- a solid content 10 to 90 wt.% based on the solvent for dissolving the epoxy resin, more preferably 40 to 85 wt.%, more preferably 60 to 80 wt.%.
- the aforementioned radiation-sensitive negative-type resist composition may contain, in accordance with needs, a variety of additives such as a surfactant, an acid-diffusion-suppressor, a pigment, a dye, a sensitizer, and a plasticizer.
- the substrate may be formed of silicon, glass, metal, ceramics, organic polymer, etc. These substrates may be subjected to pre-treatment in order to enhance adhesion with the resist composition or other properties. Specifically, silane treatment is performed so as to enhance adhesion with the resist composition. In the case in which a metal-made pattern formation mold is produced, the surface of the substrate is readily plated so as to impart electrical conductivity to the surface .
- the method for applying the radiation-sensitive negative-type resist composition to a substrate No particular limitation is imposed on the method for applying the radiation-sensitive negative-type resist composition to a substrate, and coating methods such as screen printing, curtain coating, blade coating, spin coating, spray coating, dip coating, and slit, coating can be employed.
- the substrate to which the radiation-sensitive negative-type resist composition has been applied in the first step is dried in the second step, to thereby form a resist film.
- the drying step is preferably performed under conditions (temperature and time) such that the solvent contained in the negative-type resist composition is vaporized and fold-free resist film is formed, and such that the epoxy resin, radiation-sensitive cationic polymerization initiator, and optionally added additive do not cause thermal reaction which adversely affects pattern formation.
- preferred drying conditions include, for example, 40 to 120°C, and 5 minutes to 24 hours.
- No particular limitation is imposed on the thickness of the resist film. Even when the resist film has a thickness, for example, as great as 50 ⁇ m or more, the film can be processed with precision in the subsequent steps. A thickness of 50 ⁇ m to 2 mm is particularly preferred.
- the resist film which has been formed in the second step is selectively exposed to an active energy beam according to a desired pattern.
- the active energy beam for exposure and examples include UV rays, excimer laser beams, electron beams, and X-rays. Use of an X-ray having a wavelength of 0.1 to 5 nm is particularly preferable, since high pattern precision is attained.
- the production method of the present invention employs the aforementioned radiation-sensitive negative-type resist composition, even when the resist film has a thickness, for example, as great as 50 ⁇ m or more, only a short exposure time is required and the type of the active energy beam can be selected in accordance with the desired pattern precision. Specifically, high productivity is attained, since highly useful UV-rays (light source: high-pressure mercury lamp) can be used.
- the resist film which has been exposed to the active energy beam is heated to enhance contrast. If this fourth step is omitted, reaction to form epoxy resin is not fully complete, thereby failing to form a high precision pattern.
- the heat treatment must be performed within a time and temperature where thermal reaction of the unexposed resist area to be insoluble in a developer is prevented.
- the temperature is preferably 70 to 110°C, more preferably 80 to 100°C, and the time is preferably 5 minutes to 10 hours.
- the temperature is lower than the above range or the time is shorter than the above range, the contrast is poor, whereas when the- temperature is excessively high or the time is excessively long, a problem such as formation of the unexposed area insoluble in a developer arises.
- the resist film which has been heat- treated in the fourth step is developed to remove the unexposed . area of the resist through dissolution, thereby forming a patterned layer.
- the resist film formed in the present invention has a large thickness and high strength and resolution, whereby a high-aspect pattern ⁇ layer can be formed. For example, a pattern of an aspect ratio of 10 or higher can be formed.
- any solvent can be used so long as the solvent is capable of removing the unexposed portion of the negative- type resist through dissolution.
- the solvent serving as a developer include propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate; alkyl lactate esters such as methyl lactate and ethyl lactate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; 2-heptanone; ⁇ -butyrolactone; alkyl alk
- the development can be performed any of a variety of methods, such as the spray method, the paddle method, and immersion. Among these immersion is preferred, because breakage of patterns such as peeling is prevented. In addition, ultrasonication may be performed in accordance with needs .
- a rinse step is preferably performed after completion of the development.
- No particular limitation is imposed on the mode of the rinse step, the rinse liquid, and the rinsing method, and known rinse liquids and methods can be employed.
- the resist pattern may be stabilized through heating under known conditions .
- a material other than that of the patterned layer which has been formed in the fifth step is applied to the patterned layer such that spaces present in the patterned layer are filled, at least to some height, with the material, to thereby form a second layer, and the second layer is removed, to thereby yield a pattern formation mold.
- a second layer 3 formed of a material other than that of a patterned layer 2 FIGs. 1 and 2
- a composite structure of the patterned layer 2 and the second layer 3 (FIGs. , IB and 2B) .
- the second layer 3 may be provided exclusively in the space present in the patterned layer 2 or may be provided such that the second layer completely covers the surface of the patterned layer 2.
- the pattern formation mold 4 can be employed as a "mold" for forming other parts, or the mold itself can also be used- as a part. As described above, according to the present invention, a high-aspect resist pattern layer can be formed. Thus, a pattern formation mold to which the high-aspect pattern is transferred can be produced. For example, the aspect ratio can be enhanced to 10 or higher.
- a metal-made pattern formation mold can be produced through a step; e.g., a plating step, although no particular limitation is imposed on the method for performing the plating step, electroplating is preferred.
- Plating of copper, nickel, silver, gold, solder, copper/nickel multilayer, a complex system thereof, etc. can be performed through any known conventional method. Such methods are disclosed in, for example, Comprehensive
- wet method immersion in an organic solvent such as N-methylpyrrolidone or in an organic alkaline solution agent such as ethanolamine solution is employed.
- dry method dry etching (e.g., reactive ion etching) or ashing is employed.
- the material for forming the second layer 3 may be a resin.
- a resin-made pattern formation mold can be produced by, for example, casting a photocurable or thermosetting (heatcurable) resin to form the second layer 3, and photo-curing or thermally curing the cast resin.
- the second layer 3 formed of a photocurable or thermosetting resin can be physically separated.
- the second layer 3 has sufficient resistance to the aforementioned wet method and dry method, both methods can also be employed.
- the species of the photocurable or thermosetting resin When a photocurable or thermosetting PDMS (polydimethylsiloxane) is employed, pattern transfer can be performed by readily curing PDMS through light or heat. The thus-formed second layer can be readily removed from the resist pattern through a physical method. Thus, the PDMS is particularly preferred. Examples
- the resist materials were mixed in the proportions shown in Table 1 , and the resultant mixture was uniformly kneaded by means of a three-roll mill, to thereby prepare the respective radiation-sensitive negative-type resist compositions for pattern formation.
- the structures and product names of the epoxy resins and cationic polymerization initiators are shown below. [Table 1]
- Resin-1 EHPE-3150 (epoxy resin, product of Daicel Chemical
- Resin-2 EPON SU-8 (epoxy resin, product of Shell Chemical)
- UVI-6974 cationic polymerization initiator, product of
- UVI-6990 cationic polymerization initiator, product of Union Carbide, a mixture predominantly containing the above
- PI-3 SarCat CD-1012 (cationic polymerization initiator, product of Sartomer Co.)
- PI-4 A mixture predominantly containing PI-4. ⁇ Comparative Example 1>
- Comparative Example 1 for pattern formation having a composition shown in Table 1 was prepared. 2. Evaluation of patterning characteristics (1) Production of resist film
- Each of the radiation-sensitive negative-type resist compositions for pattern formation of Examples 1 to 4 was applied by means of a spin-coater to a silicon substrate which had been surface-coated with copper through sputtering.
- Each of the resist films produced in Examples la to 4a was irradiated with light.
- a quartz UV mask was used, whereas when an X-ray (wavelength: 0.2 to 1 nm) based on synchrotron radiation was used, a diamond membrane on which a gold light-absorbing pattern was formed was used as an X-ray mask.
- the substrate was heated on a hot-plate at 90°C for 10 minutes, followed by immersion of the irradiated resist film in propylene glycol monomethyl ether acetate for 30 minutes for developing, to thereby form a resist pattern.
- the irradiation dose at each test is shown in Table 2.
- the PMMA resist film of Comparative Example 2a was irradiated through a mask similar to that employed in Examples lb to 4b.
- the thus-irradiated resist film was immersed in a mixture containing ethanol , oxazine, aminoethanol , and water for 12 hours with ultrasonication for developing, to thereby form a resist pattern.
- ⁇ Test Example 2> Each of the resist patterns produced in Examples lb to 4b and Comparative Examples lb and 2b was observed under an optical microscope, to thereby evaluate the resist composition in terms of its sensitivity. Specifically, the case in which no curved or deformed portion of the pattern formed by swelling was observed was assigned a rating "AA" . Similarly, the case in which the top of the pattern had creases but no curved portion was observed was assigned a rating "BB" , and the case in which a curved portion was observed was assigned a rating "CC" .
- the pattern was also evaluated in terms of the resolution of each resist composition. Specifically, the case in which the resist pattern was resolved at a mask width of 10 ⁇ m (aspect ratio: 10) was assigned a rating "AA” . Similarly, the case in which the resist pattern was resolved at a mask width of 20 ⁇ m (aspect ratio: 5) was assigned a rating "BB” , and the case in which the resist pattern was not resolved was assigned a rating "CC” . Table 2 shows the results . [Table 2]
- test results of Examples la and 4a indicate excellent coatability, and the test results of Examples lb and 4b indicate excellent properties under all exposure conditions (light sources: high-pressure mercury lamp, KrF excimer laser beam, and X-ray based on synchrotron radiation) .
- Example 2a The test results of Example 2a indicate excellent coatability.
- the test results of Example 2b indicate generally excellent properties, although curing sensitivity is slightly inferior to that obtained in Example lb.
- Example 3a The test results of Example 3a indicate excellent coatability.
- the test results of Example 3b indicate generally excellent properties, although the development rate of unexposed portions was slow and the formed pattern was slightly affected.
- Comparative Example la indicate excellent coatability.
- the test results of Comparative Example lb indicate excellent properties under exposure conditions (light sources: high-pressure mercury lamp and X- ray based on synchrotron radiation) .
- a resist pattern was not formed through exposure to a KrF excimer laser beam.
- Comparative Example 2a a resist film having a uniform thickness failed to be formed.
- the test results of Comparative Example 2b indicate that forming a resist pattern requires severe exposure conditions which are not practically employed (i.e., synchrotron radiation of 10,000 J/cm 2 ) . 3. Softening point and appearance of resist film formed through drying ⁇ Test Example 3>
- the softening point of the resist film of Example la was determined through the method specified by JIS K 7234, and the resist film was visually observed. As a result, the resist film was found to have a softening point of 60°C and was found to be an excellent resist film free from creases and folds . 4. Formation of a metal-made pattern formation mold ⁇ Example lc>
- the substrate on which the resist pattern of Example lb had been formed was immersed in Microfab Au 100 (plating solution, product of Tanaka Kikinzoku Kogyo K.K.), and plating was performed at room temperature and a current density of 1 to 10 A/100 cm 2 , to thereby form an Au plating layer (second layer) .
- the thus-formed composite was immersed in an aqueous solution having a Cr(VI) oxide concentration of 250 g/L and a sulfuric acid concentration of 15 mL/L, to thereby remove copper from the substrate through etching.
- Example 4 The procedure of Example lc was repeated, except that a substrate on which the resist pattern of Comparative Example 2b was used instead of that of Example lb, to thereby produce a metal (Au) -made pattern formation mold.
- Example lc Each of the metal-made pattern formation molds produced in Example lc and Comparative Example 2c was observed under a microscope, to thereby evaluate formation status. Specifically, the case in which the resist pattern was uniformly plated and a pattern was formed with high precision through transfer of the original resist pattern was assigned a rating "0.” Similarly, the case in which the resist pattern was not uniformly plated and/or failure in formation of a pattern formed through transfer of the original resist pattern was observed was assigned a rating "X.” The results are shown in Table 3. 5. Formation of a resin-made pattern formation mold ⁇ Example ld>
- Example 5 The procedure of Example Id was repeated, except that a substrate on which the resist pattern of Comparative Example 2b had, been formed was used instead of that of Example lb, to thereby produce a resin-made pattern formation mold.
- Example Id Each of the resin-made pattern formation molds produced in Example Id and Comparative Example 2d was observed under a microscope, to thereby evaluate formation status. Specifically, the case in which broken fragments of the original resist pattern did not adhere to the produced PDMS pattern and a pattern was formed with high precision through transfer of the original resist pattern was assigned a rating "0.” Similarly, the case in which the original resist pattern was broken and/or failure in formation of a pattern formed through transfer of the original resist pattern was observed was assigned a rating "X.” The results are shown in Table 3. [Table 3]
- a pattern formation mold formed of metal, resin, etc. from a high-aspect resist pattern having high pattern precision, the high-aspect pattern being produced through a method in which a resist composition can be applied to a substrate in a simple manner so as to accurately control film thickness (e.g., spin coating) ; the target level of pattern precision and the light source for exposure can be selected from wide ranges; and high productivity is attained by virtue of requirement of a short exposure time.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03794133A EP1540419A1 (en) | 2002-08-30 | 2003-08-29 | Method for producing a pattern formation mold |
US10/526,384 US20060189160A1 (en) | 2002-08-30 | 2003-08-29 | Method for producing a pattern formation mold |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002-252920 | 2002-08-30 | ||
JP2002252920 | 2002-08-30 |
Publications (1)
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WO2004023210A1 true WO2004023210A1 (en) | 2004-03-18 |
Family
ID=31972769
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2003/011028 WO2004023210A1 (en) | 2002-08-30 | 2003-08-29 | Method for producing a pattern formation mold |
Country Status (5)
Country | Link |
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US (1) | US20060189160A1 (en) |
EP (1) | EP1540419A1 (en) |
KR (1) | KR100775059B1 (en) |
TW (1) | TWI245970B (en) |
WO (1) | WO2004023210A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007111469A1 (en) * | 2006-03-28 | 2007-10-04 | Lg Chem, Ltd. | Method of forming nanopattern and substrate having pattern formed using the method |
KR100871059B1 (en) * | 2006-03-28 | 2008-11-27 | 주식회사 엘지화학 | Method for forming a nano-pattern and substrate having the pattern formed by the method |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI249075B (en) * | 2002-08-30 | 2006-02-11 | Toyo Gosei Co Ltd | Radiation-sensitive negative-type resist composition for pattern formation and pattern formation method |
JP3723201B1 (en) * | 2004-10-18 | 2005-12-07 | 独立行政法人食品総合研究所 | Method for producing microsphere using metal substrate having through hole |
KR100782412B1 (en) * | 2006-10-25 | 2007-12-05 | 삼성전기주식회사 | Method for forming transcriptional circuit and method for manufacturing circuit board |
US8013456B2 (en) * | 2007-02-23 | 2011-09-06 | Texas Advanced Optoelectronic Solutions, Inc. | Molded beam for optoelectronic sensor chip substrate |
EP2093612B1 (en) * | 2008-02-25 | 2012-02-08 | Sony Corporation | A method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US4565859A (en) * | 1984-01-30 | 1986-01-21 | Daicel Chemical Industries, Ltd. | Polyether compounds, epoxy resins, epoxy resin compositions, and processes for production thereof |
JPS62187720A (en) * | 1985-12-28 | 1987-08-17 | Daicel Chem Ind Ltd | Epoxy resin jig |
DE19955969A1 (en) * | 1999-11-19 | 2001-05-31 | Inst Mikrotechnik Mainz Gmbh | Use of polyimide for adhesive layers and lithographic process for the production of microcomponents |
WO2001044875A2 (en) * | 1999-12-15 | 2001-06-21 | Nanogen, Inc. | Micromolds fabricated using mems technology and methods of use therefor |
US6251565B1 (en) * | 1999-08-16 | 2001-06-26 | Industrial Technology Research Institute | Method of making molds for manufacturing multiple-lead microstructures |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4256828A (en) * | 1975-09-02 | 1981-03-17 | Minnesota Mining And Manufacturing Company | Photocopolymerizable compositions based on epoxy and hydroxyl-containing organic materials |
US4231951A (en) * | 1978-02-08 | 1980-11-04 | Minnesota Mining And Manufacturing Company | Complex salt photoinitiator |
JP3143308B2 (en) * | 1994-01-31 | 2001-03-07 | キヤノン株式会社 | Method of manufacturing ink jet recording head |
TWI249075B (en) * | 2002-08-30 | 2006-02-11 | Toyo Gosei Co Ltd | Radiation-sensitive negative-type resist composition for pattern formation and pattern formation method |
-
2003
- 2003-08-29 KR KR1020057003432A patent/KR100775059B1/en not_active IP Right Cessation
- 2003-08-29 US US10/526,384 patent/US20060189160A1/en not_active Abandoned
- 2003-08-29 EP EP03794133A patent/EP1540419A1/en not_active Withdrawn
- 2003-08-29 WO PCT/JP2003/011028 patent/WO2004023210A1/en active Application Filing
- 2003-08-29 TW TW092123909A patent/TWI245970B/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4565859A (en) * | 1984-01-30 | 1986-01-21 | Daicel Chemical Industries, Ltd. | Polyether compounds, epoxy resins, epoxy resin compositions, and processes for production thereof |
JPS62187720A (en) * | 1985-12-28 | 1987-08-17 | Daicel Chem Ind Ltd | Epoxy resin jig |
US6251565B1 (en) * | 1999-08-16 | 2001-06-26 | Industrial Technology Research Institute | Method of making molds for manufacturing multiple-lead microstructures |
DE19955969A1 (en) * | 1999-11-19 | 2001-05-31 | Inst Mikrotechnik Mainz Gmbh | Use of polyimide for adhesive layers and lithographic process for the production of microcomponents |
WO2001044875A2 (en) * | 1999-12-15 | 2001-06-21 | Nanogen, Inc. | Micromolds fabricated using mems technology and methods of use therefor |
Non-Patent Citations (2)
Title |
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PATENT ABSTRACTS OF JAPAN vol. 120, no. 40 5 February 1988 (1988-02-05) * |
See also references of EP1540419A1 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007111469A1 (en) * | 2006-03-28 | 2007-10-04 | Lg Chem, Ltd. | Method of forming nanopattern and substrate having pattern formed using the method |
KR100871059B1 (en) * | 2006-03-28 | 2008-11-27 | 주식회사 엘지화학 | Method for forming a nano-pattern and substrate having the pattern formed by the method |
Also Published As
Publication number | Publication date |
---|---|
TWI245970B (en) | 2005-12-21 |
KR20050100592A (en) | 2005-10-19 |
KR100775059B1 (en) | 2007-11-08 |
US20060189160A1 (en) | 2006-08-24 |
TW200405124A (en) | 2004-04-01 |
EP1540419A1 (en) | 2005-06-15 |
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