WO2004003663A3 - Apparatus and method for treating a substrate electrochemically while reducing metal corrosion - Google Patents

Apparatus and method for treating a substrate electrochemically while reducing metal corrosion Download PDF

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Publication number
WO2004003663A3
WO2004003663A3 PCT/US2003/020949 US0320949W WO2004003663A3 WO 2004003663 A3 WO2004003663 A3 WO 2004003663A3 US 0320949 W US0320949 W US 0320949W WO 2004003663 A3 WO2004003663 A3 WO 2004003663A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
treating
metal corrosion
reducing metal
atmosphere
Prior art date
Application number
PCT/US2003/020949
Other languages
French (fr)
Other versions
WO2004003663A2 (en
Inventor
Axel Preusse
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10228998A external-priority patent/DE10228998B4/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to JP2004518227A priority Critical patent/JP2006507405A/en
Priority to EP03762324A priority patent/EP1540044A2/en
Priority to AU2003248809A priority patent/AU2003248809A1/en
Publication of WO2004003663A2 publication Critical patent/WO2004003663A2/en
Publication of WO2004003663A3 publication Critical patent/WO2004003663A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008—Current shielding devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/003—Electroplating using gases, e.g. pressure influence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Abstract

A process tool (200) for electrochemically treating a substrate (201) is configured to reduce the oxygen concentration and/or the sulfur dioxide concentration in the vicinity of the substrate so that corrosion of copper may be reduced. In one embodiment, a substantially inert atmosphere is established within the process tool (200) including a plating reactor by providing a continuous inert gas flow and/or by providing a cover (201) that reduces a gas exchange with the ambient atmosphere. The substantially inert gas atmosphere may also be maintained during further process steps involved in electrochemically treating the substrate including required transportation steps between the individual process steps.
PCT/US2003/020949 2002-06-28 2003-06-24 Apparatus and method for treating a substrate electrochemically while reducing metal corrosion WO2004003663A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004518227A JP2006507405A (en) 2002-06-28 2003-06-24 Apparatus and method for electrochemically treating a substrate while reducing metal corrosion
EP03762324A EP1540044A2 (en) 2002-06-28 2003-06-24 Apparatus and method for treating a substrate electrochemically while reducing metal corrosion
AU2003248809A AU2003248809A1 (en) 2002-06-28 2003-06-24 Apparatus and method for treating a substrate electrochemically while reducing metal corrosion

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10228998.0 2002-06-28
DE10228998A DE10228998B4 (en) 2002-06-28 2002-06-28 Device and method for the electrochemical treatment of a substrate with reduced metal corrosion
US10/304,903 US6841056B2 (en) 2002-06-28 2002-11-26 Apparatus and method for treating a substrate electrochemically while reducing metal corrosion
US10/304,903 2002-11-26

Publications (2)

Publication Number Publication Date
WO2004003663A2 WO2004003663A2 (en) 2004-01-08
WO2004003663A3 true WO2004003663A3 (en) 2005-04-28

Family

ID=30001486

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/020949 WO2004003663A2 (en) 2002-06-28 2003-06-24 Apparatus and method for treating a substrate electrochemically while reducing metal corrosion

Country Status (5)

Country Link
EP (1) EP1540044A2 (en)
JP (1) JP2006507405A (en)
AU (1) AU2003248809A1 (en)
TW (1) TWI286355B (en)
WO (1) WO2004003663A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4108804A1 (en) * 2019-10-10 2022-12-28 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Method and apparatus for performing immersion tin process or copper plating process in the production of a component carrier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1103639A2 (en) * 1999-11-08 2001-05-30 Ebara Corporation Plating apparatus and method
WO2002031231A1 (en) * 2000-10-13 2002-04-18 Sony Corporation Semiconductor production device and production method for semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01104795A (en) * 1987-10-15 1989-04-21 Nisshin Steel Co Ltd Method for controlling atmosphere in electrolytic aluminizing tank
JPH03207893A (en) * 1989-12-30 1991-09-11 Sumitomo Metal Ind Ltd Cell for continuous pressure electroplating for steel strip
JPH0497904A (en) * 1990-08-13 1992-03-30 Hitachi Plant Eng & Constr Co Ltd Manufacture of activated carbon impregnated with chemical
US5536302A (en) * 1994-03-23 1996-07-16 Air Products And Chemicals, Inc. Adsorbent for removal of trace oxygen from inert gases
CN1260778C (en) * 2000-12-04 2006-06-21 株式会社荏原制作所 Substrate processing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1103639A2 (en) * 1999-11-08 2001-05-30 Ebara Corporation Plating apparatus and method
WO2002031231A1 (en) * 2000-10-13 2002-04-18 Sony Corporation Semiconductor production device and production method for semiconductor device
US20030113996A1 (en) * 2000-10-13 2003-06-19 Takeshi Nogami Semiconductor production device and production method for semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1540044A2 *

Also Published As

Publication number Publication date
WO2004003663A2 (en) 2004-01-08
TW200401362A (en) 2004-01-16
TWI286355B (en) 2007-09-01
AU2003248809A8 (en) 2004-01-19
JP2006507405A (en) 2006-03-02
EP1540044A2 (en) 2005-06-15
AU2003248809A1 (en) 2004-01-19

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