WO2004001853A3 - Imager - Google Patents

Imager Download PDF

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Publication number
WO2004001853A3
WO2004001853A3 PCT/FR2003/001965 FR0301965W WO2004001853A3 WO 2004001853 A3 WO2004001853 A3 WO 2004001853A3 FR 0301965 W FR0301965 W FR 0301965W WO 2004001853 A3 WO2004001853 A3 WO 2004001853A3
Authority
WO
WIPO (PCT)
Prior art keywords
block
photosensitive material
imager
addressing
detector
Prior art date
Application number
PCT/FR2003/001965
Other languages
French (fr)
Other versions
WO2004001853A2 (en
Inventor
Cyril Guedj
Jose Alvarez
Yvan Bonnassieux
Jean-Paul Kleider
Norbert Moussy
I Cabarrocas Pere Roca
Svetoslav Tchakarov
Original Assignee
Commissariat Energie Atomique
Centre Nat Rech Scient
Cyril Guedj
Jose Alvarez
Yvan Bonnassieux
Jean-Paul Kleider
Norbert Moussy
I Cabarrocas Pere Roca
Svetoslav Tchakarov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0207893A external-priority patent/FR2841382B1/en
Priority claimed from FR0207894A external-priority patent/FR2841383B1/en
Application filed by Commissariat Energie Atomique, Centre Nat Rech Scient, Cyril Guedj, Jose Alvarez, Yvan Bonnassieux, Jean-Paul Kleider, Norbert Moussy, I Cabarrocas Pere Roca, Svetoslav Tchakarov filed Critical Commissariat Energie Atomique
Priority to EP03760788A priority Critical patent/EP1516368B1/en
Priority to DE60318848T priority patent/DE60318848T2/en
Priority to US10/519,012 priority patent/US7189952B2/en
Publication of WO2004001853A2 publication Critical patent/WO2004001853A2/en
Publication of WO2004001853A3 publication Critical patent/WO2004001853A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Meat, Egg Or Seafood Products (AREA)
  • Massaging Devices (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention relates to a collection of sensors embodied as an imager with a detector block made from a photosensitive material, an addressing block optionally for signal processing of signals coming from the sensor(s) and an interconnection block, located between the detector block and the addressing block, said block having connector points. The above is characterised in that the photosensitive material of the detection block contains polymorphic silicon. The invention further relates to a production method.
PCT/FR2003/001965 2002-06-25 2003-06-25 Imager WO2004001853A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03760788A EP1516368B1 (en) 2002-06-25 2003-06-25 Imager
DE60318848T DE60318848T2 (en) 2002-06-25 2003-06-25 ILLUSTRATION DEVICE
US10/519,012 US7189952B2 (en) 2002-06-25 2003-06-25 Imager having photosensitive material contains polymorphous silicon

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR02/07893 2002-06-25
FR02/07894 2002-06-25
FR0207893A FR2841382B1 (en) 2002-06-25 2002-06-25 IMAGER FOR VISIBLE LIGHT
FR0207894A FR2841383B1 (en) 2002-06-25 2002-06-25 IMAGER FOR ULTRAVIOLET

Publications (2)

Publication Number Publication Date
WO2004001853A2 WO2004001853A2 (en) 2003-12-31
WO2004001853A3 true WO2004001853A3 (en) 2004-04-08

Family

ID=30001931

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/001965 WO2004001853A2 (en) 2002-06-25 2003-06-25 Imager

Country Status (5)

Country Link
US (1) US7189952B2 (en)
EP (1) EP1516368B1 (en)
AT (1) ATE385043T1 (en)
DE (1) DE60318848T2 (en)
WO (1) WO2004001853A2 (en)

Families Citing this family (33)

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US20040135209A1 (en) * 2002-02-05 2004-07-15 Tzu-Chiang Hsieh Camera with MOS or CMOS sensor array
EP1677364A1 (en) * 2004-12-30 2006-07-05 St Microelectronics S.A. Light detector formed on an integrated circuit
KR100790237B1 (en) * 2005-12-29 2008-01-02 매그나칩 반도체 유한회사 Method for fabricating the same of cmos image sensor in metal layer
US7714300B1 (en) * 2006-06-27 2010-05-11 Kla-Tencor Technologies Corporation High-speed high-efficiency solid-state electron detector
FR2907261B1 (en) * 2006-10-12 2009-01-30 Commissariat Energie Atomique DEVICE FOR ELECTROMAGNETIC COUPLING OF AN ELECTROMAGNETIC RADIATION DETECTOR
KR100872719B1 (en) * 2007-04-17 2008-12-05 동부일렉트로닉스 주식회사 Image Sensor and Method for Manufacturing thereof
JP2009065161A (en) * 2007-09-07 2009-03-26 Dongbu Hitek Co Ltd Image sensor, and manufacturing method thereof
JP4503060B2 (en) * 2007-09-21 2010-07-14 Ｏｋｉセミコンダクタ株式会社 UV sensor, UV sensor setting method
IL189254A0 (en) * 2008-02-04 2008-08-07 Garber Valery Quantum uncooled infra-red photo-detector
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8835831B2 (en) * 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US10297707B1 (en) * 2009-02-23 2019-05-21 Tatiana Globus Thin film photovoltaic cell system and method of manufacture
JP5553693B2 (en) * 2010-06-30 2014-07-16 キヤノン株式会社 Solid-state imaging device and imaging system
KR101154709B1 (en) * 2010-07-28 2012-06-08 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system
US8753917B2 (en) * 2010-12-14 2014-06-17 International Business Machines Corporation Method of fabricating photoconductor-on-active pixel device
JP6197312B2 (en) * 2013-03-12 2017-09-20 株式会社リコー Sensor element and method for manufacturing sensor element
US20210305306A1 (en) * 2020-03-31 2021-09-30 Stmicroelectronics (Crolles 2) Sas Pixel of a light sensor and method for manufacturing same
CN112331687A (en) * 2020-11-30 2021-02-05 联合微电子中心有限责任公司 CMOS image sensor and manufacturing method thereof
FR3117268B1 (en) * 2020-12-08 2022-12-09 St Microelectronics Crolles 2 Sas Pixel of a light sensor and method of manufacturing the same
US20230112479A1 (en) * 2021-10-12 2023-04-13 Tyntek Corporation Photodiode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726605A2 (en) * 1995-02-09 1996-08-14 Universita' Degli Studi Di Roma "La Sapienza" Thin film detector of ultraviolet radiation, with high spectral selectivity option
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
EP1050907A2 (en) * 1999-05-03 2000-11-08 Agilent Technologies Inc. Photosensor structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239808B1 (en) * 1986-03-03 1991-02-27 Kabushiki Kaisha Toshiba Radiation detecting device
US6114739A (en) * 1998-10-19 2000-09-05 Agilent Technologies Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726605A2 (en) * 1995-02-09 1996-08-14 Universita' Degli Studi Di Roma "La Sapienza" Thin film detector of ultraviolet radiation, with high spectral selectivity option
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
EP1050907A2 (en) * 1999-05-03 2000-11-08 Agilent Technologies Inc. Photosensor structure

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AFANAS'EV V P ET AL: "PHOTODETECTOR STRUCTURES BASED ON AMORPHOUS HYDROGENATED SILICON WITH NANOCRYSTALLINE INCLUSIONS", HUETTE. DES INGENIEURS TASCHENBUCH, XX, XX, vol. 68, no. 12, December 2001 (2001-12-01), pages 949 - 951, XP008017344 *
FONTCUBERTA I MORRAL A ET AL: "In situ investigation of polymorphous silicon deposition", JOURNAL OF NON-CRYSTALLINE SOLIDS, NORTH-HOLLAND PUBLISHING COMPANY, AMSTERDAM, NL, vol. 266-269, May 2000 (2000-05-01), pages 48 - 53, XP004198464, ISSN: 0022-3093 *
POISSANT Y ET AL: "Metastability study and optimization of polymorphous silicon solar cells: the state-of-the-art", JOURNAL OF NON-CRYSTALLINE SOLIDS, NORTH-HOLLAND PHYSICS PUBLISHING. AMSTERDAM, NL, vol. 299-302, April 2002 (2002-04-01), pages 1173 - 1178, XP004353196, ISSN: 0022-3093 *
VOZ C ET AL: "Thin-film transistors with polymorphous silicon active layer", JOURNAL OF NON-CRYSTALLINE SOLIDS, NORTH-HOLLAND PHYSICS PUBLISHING. AMSTERDAM, NL, vol. 299-302, April 2002 (2002-04-01), pages 1345 - 1350, XP004353229, ISSN: 0022-3093 *

Also Published As

Publication number Publication date
US20050224707A1 (en) 2005-10-13
EP1516368B1 (en) 2008-01-23
WO2004001853A2 (en) 2003-12-31
EP1516368A2 (en) 2005-03-23
DE60318848D1 (en) 2008-03-13
US7189952B2 (en) 2007-03-13
DE60318848T2 (en) 2009-02-05
ATE385043T1 (en) 2008-02-15

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