WO2003107493A3 - Device for optical signal transmission, method for optical signal transmission and optical modulator - Google Patents

Device for optical signal transmission, method for optical signal transmission and optical modulator Download PDF

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Publication number
WO2003107493A3
WO2003107493A3 PCT/DE2003/002044 DE0302044W WO03107493A3 WO 2003107493 A3 WO2003107493 A3 WO 2003107493A3 DE 0302044 W DE0302044 W DE 0302044W WO 03107493 A3 WO03107493 A3 WO 03107493A3
Authority
WO
WIPO (PCT)
Prior art keywords
signal transmission
optical signal
optical
modulator
emission
Prior art date
Application number
PCT/DE2003/002044
Other languages
German (de)
French (fr)
Other versions
WO2003107493A2 (en
Inventor
Robert Averbeck
Bernhard Stegmueller
Original Assignee
Infineon Technologies Ag
Robert Averbeck
Bernhard Stegmueller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Robert Averbeck, Bernhard Stegmueller filed Critical Infineon Technologies Ag
Priority to EP03740100A priority Critical patent/EP1514334A2/en
Publication of WO2003107493A2 publication Critical patent/WO2003107493A2/en
Publication of WO2003107493A3 publication Critical patent/WO2003107493A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Communication System (AREA)

Abstract

The invention relates to a device for optical signal transmission comprising a laser element, a semi-conductor element arranged in the direction of emission having a third energy level which is located between a first and a second energy level, and means for applying an electric field. When an electric field is applied, light can be emitted by absorption of the light emitted by the laser element in a second direction of emission.
PCT/DE2003/002044 2002-06-18 2003-06-18 Device for optical signal transmission, method for optical signal transmission and optical modulator WO2003107493A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP03740100A EP1514334A2 (en) 2002-06-18 2003-06-18 Device for optical signal transmission, method for optical signal transmission and optical modulator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2002127168 DE10227168A1 (en) 2002-06-18 2002-06-18 Optical signal transmission device, optical signal transmission method and optical modulator
DE10227168.2 2002-06-18

Publications (2)

Publication Number Publication Date
WO2003107493A2 WO2003107493A2 (en) 2003-12-24
WO2003107493A3 true WO2003107493A3 (en) 2004-07-29

Family

ID=29723232

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002044 WO2003107493A2 (en) 2002-06-18 2003-06-18 Device for optical signal transmission, method for optical signal transmission and optical modulator

Country Status (3)

Country Link
EP (1) EP1514334A2 (en)
DE (1) DE10227168A1 (en)
WO (1) WO2003107493A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175739A (en) * 1988-09-09 1992-12-29 Fujitsu Limited Semiconductor optical device having a non-linear operational characteristic
EP0549132A2 (en) * 1991-12-24 1993-06-30 AT&T Corp. Article comprising a semiconductor body and means for modulating the optical transparency of the same
EP0614253A1 (en) * 1993-03-03 1994-09-07 Nec Corporation Multi-quantum well (MQW) structure laser diode/modulator integrated light source
JPH1084164A (en) * 1996-09-06 1998-03-31 Fujitsu Ltd Semiconductor quantum dot light modulator

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215072A (en) * 1988-02-12 1989-09-13 Philips Electronic Associated A method of modulating an optical beam
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
JP3572673B2 (en) * 1994-08-31 2004-10-06 ソニー株式会社 Quantum device
FR2751480A1 (en) * 1996-07-19 1998-01-23 Commissariat Energie Atomique Solid state cavity micro-laser applicable in telemetry and automobile industries
FR2784514B1 (en) * 1998-10-13 2001-04-27 Thomson Csf METHOD FOR CONTROLLING A SINGLE POLE SEMICONDUCTOR LASER

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175739A (en) * 1988-09-09 1992-12-29 Fujitsu Limited Semiconductor optical device having a non-linear operational characteristic
EP0549132A2 (en) * 1991-12-24 1993-06-30 AT&T Corp. Article comprising a semiconductor body and means for modulating the optical transparency of the same
EP0614253A1 (en) * 1993-03-03 1994-09-07 Nec Corporation Multi-quantum well (MQW) structure laser diode/modulator integrated light source
JPH1084164A (en) * 1996-09-06 1998-03-31 Fujitsu Ltd Semiconductor quantum dot light modulator

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
HUDGINGS J A ET AL: "THE PHYSICS OF NEGATIVE DIFFERENTIAL RESISTANCE OF AN INTRACAVITY VOLTAGE-CONTROLLED ABSORBER IN A VERTICAL-CAVITY SURFACE-EMITTING LASER", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 73, no. 13, 28 September 1998 (1998-09-28), pages 1796 - 1798, XP000784162, ISSN: 0003-6951 *
KOICHI WAKITA ET AL: "HIGH-SPEED INGAALAS/INALAS MULTIPLE QUANTUM WELL OPTICAL MODULATORS", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE. NEW YORK, US, vol. 8, no. 7, 1 July 1990 (1990-07-01), pages 1027 - 1032, XP000171591, ISSN: 0733-8724 *
KOREN U ET AL: "Low-loss in InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator", APPLIED PHYSICS LETTERS, 12 OCT. 1987, USA, vol. 51, no. 15, pages 1132 - 1134, XP002281196, ISSN: 0003-6951 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 08 30 June 1998 (1998-06-30) *

Also Published As

Publication number Publication date
DE10227168A1 (en) 2004-01-15
WO2003107493A2 (en) 2003-12-24
EP1514334A2 (en) 2005-03-16

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