WO2003106927A3 - PASSIVE TEMPERATURE CORRECTION TECHNIQUE FOR MICROELECTROMECHANICAL DEVICES - Google Patents

PASSIVE TEMPERATURE CORRECTION TECHNIQUE FOR MICROELECTROMECHANICAL DEVICES Download PDF

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Publication number
WO2003106927A3
WO2003106927A3 PCT/US2003/013308 US0313308W WO03106927A3 WO 2003106927 A3 WO2003106927 A3 WO 2003106927A3 US 0313308 W US0313308 W US 0313308W WO 03106927 A3 WO03106927 A3 WO 03106927A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature correction
correction technique
passive temperature
diode
microelectromechanical devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/013308
Other languages
French (fr)
Other versions
WO2003106927A2 (en
Inventor
William Platt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to CA002484323A priority Critical patent/CA2484323A1/en
Priority to EP03748903A priority patent/EP1499855A2/en
Priority to AU2003267956A priority patent/AU2003267956B2/en
Priority to JP2004513700A priority patent/JP2005524856A/en
Publication of WO2003106927A2 publication Critical patent/WO2003106927A2/en
Publication of WO2003106927A3 publication Critical patent/WO2003106927A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)

Abstract

Dans un mode de réalisation, un capteur micro-électromécanique MEMS mettant en application une technique de correction de température passive peut produire une sortie de détection non corrigée. De plus, un circuit couplé au capteur MEMS peut comporter une diode présentant une chute de tension. Il est possible d'obtenir une sortie de détection corrigée par combinaison de la sortie de détection non corrigée à une sortie de diode proportionnelle à la chute de tension dans cette diode.In one embodiment, a MEMS micro-electromechanical sensor implementing a passive temperature correction technique can produce an uncorrected detection output. In addition, a circuit coupled to the MEMS sensor may include a diode having a voltage drop. It is possible to obtain a corrected detection output by combining the uncorrected detection output with a diode output proportional to the voltage drop in this diode.

PCT/US2003/013308 2002-04-30 2003-04-29 Passive temperature compensation technique for mems devices Ceased WO2003106927A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA002484323A CA2484323A1 (en) 2002-04-30 2003-04-29 Passive temperature compensation technique for mems devices
EP03748903A EP1499855A2 (en) 2002-04-30 2003-04-29 Passive temperature compensation technique for mems devices
AU2003267956A AU2003267956B2 (en) 2002-04-30 2003-04-29 Passive temperature compensation techqnique for MEMS devices
JP2004513700A JP2005524856A (en) 2002-04-30 2003-04-29 Passive temperature compensation for MEMS sensors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/135,538 US6959583B2 (en) 2002-04-30 2002-04-30 Passive temperature compensation technique for MEMS devices
US10/135,538 2002-04-30

Publications (2)

Publication Number Publication Date
WO2003106927A2 WO2003106927A2 (en) 2003-12-24
WO2003106927A3 true WO2003106927A3 (en) 2004-02-26

Family

ID=29249474

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/013308 Ceased WO2003106927A2 (en) 2002-04-30 2003-04-29 Passive temperature compensation technique for mems devices

Country Status (6)

Country Link
US (1) US6959583B2 (en)
EP (1) EP1499855A2 (en)
JP (1) JP2005524856A (en)
AU (1) AU2003267956B2 (en)
CA (1) CA2484323A1 (en)
WO (1) WO2003106927A2 (en)

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US7307540B2 (en) * 2004-06-08 2007-12-11 General Electric Company Systems, apparatus, and methods having a mechanical logic function in a microelectromechanical system sensor
EP1640726B1 (en) 2004-09-22 2009-09-09 STMicroelectronics S.r.l. Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress
EP1645847B1 (en) 2004-10-08 2014-07-02 STMicroelectronics Srl Temperature compensated micro-electromechanical device and method of temperature compensation in a micro-electromechanical device
GB0423780D0 (en) * 2004-10-26 2004-12-01 Trade & Industry Sec Dep For Lateral calibration device
CN100397041C (en) * 2004-11-12 2008-06-25 中国科学院上海微系统与信息技术研究所 Piezoresistive micromechanical gyroscope with micro-beam direct pull direct compression structure and manufacturing method
US7308827B2 (en) * 2005-03-02 2007-12-18 United States Of America As Represented By The Secretary Of The Army Integrated gyroscope and temperature sensor
US7258010B2 (en) * 2005-03-09 2007-08-21 Honeywell International Inc. MEMS device with thinned comb fingers
US7302848B2 (en) * 2005-03-10 2007-12-04 The Charles Stark Draper Laboratory, Inc. Force compensated comb drive
US7210337B1 (en) * 2005-10-17 2007-05-01 Honeywell International Inc. MEMS sensor package leak test
JP5006268B2 (en) * 2008-06-10 2012-08-22 日本電信電話株式会社 Sensor node chip, sensor node system, and receiver
US8187902B2 (en) 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
US8640552B2 (en) 2011-09-06 2014-02-04 Honeywell International Inc. MEMS airflow sensor die incorporating additional circuitry on the die
CN103207848B (en) * 2013-03-07 2016-01-06 中国兵器工业集团第二一四研究所苏州研发中心 A kind of communication means being applicable to MEMS gyro coefficient and loading
RU2554624C1 (en) * 2014-02-12 2015-06-27 Акционерное общество "Концерн "Центральный научно-исследовательский институт "Электроприбор" Method of measurement of physical non-electrical quantity
CN105093239B (en) * 2015-08-21 2017-07-28 西安空间无线电技术研究所 A kind of Time Delay of Systems error calibration method based on temperature-compensating
CN106370173B (en) * 2016-08-17 2019-05-24 中国船舶重工集团公司第七0七研究所 A kind of modeling of lasergyro model of temperature compensation and verification method
US11174153B2 (en) 2019-08-21 2021-11-16 Invensense, Inc. Package level thermal gradient sensing
US11073531B2 (en) 2019-08-21 2021-07-27 Invensense, Inc. Vertical thermal gradient compensation in a z-axis MEMS accelerometer
US11186479B2 (en) 2019-08-21 2021-11-30 Invensense, Inc. Systems and methods for operating a MEMS device based on sensed temperature gradients
DE102019217333A1 (en) * 2019-11-11 2021-05-12 Robert Bosch Gmbh Method for determining at least one temperature compensation parameter to compensate for temperature influences on the measured values of a sensor system
CN115523911B (en) * 2022-09-23 2025-06-10 北京自动化控制设备研究所 Temperature self-adaptive compensation method and system for quartz tuning fork gyroscope

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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349855A (en) * 1992-04-07 1994-09-27 The Charles Stark Draper Laboratory, Inc. Comb drive micromechanical tuning fork gyro
EP0661521A1 (en) * 1993-12-28 1995-07-05 Murata Manufacturing Co., Ltd. Oscillation circuit
EP0675340A1 (en) * 1994-03-30 1995-10-04 Murata Manufacturing Co., Ltd. Vibrating gyroscope detecting system
US5895851A (en) * 1994-11-17 1999-04-20 Nippondenso Co., Ltd. Semiconductor yaw rate sensor with a vibrating movable section with vertical and horizontal displacement detection
US6251698B1 (en) * 1997-05-23 2001-06-26 Sextant Avionique Method for making a machined silicon micro-sensor
US5920012A (en) * 1998-06-16 1999-07-06 Boeing North American Micromechanical inertial sensor
WO2001027026A1 (en) * 1999-10-08 2001-04-19 Hahn-Schickard Gesellschaft Für Angewandte Forschung E.V. Electromechanical component and method for producing said component

Also Published As

Publication number Publication date
AU2003267956A1 (en) 2003-12-31
JP2005524856A (en) 2005-08-18
CA2484323A1 (en) 2003-12-24
US6959583B2 (en) 2005-11-01
AU2003267956B2 (en) 2006-04-27
US20030200785A1 (en) 2003-10-30
EP1499855A2 (en) 2005-01-26
WO2003106927A2 (en) 2003-12-24

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