WO2003103060A3 - Wavelength selective detector - Google Patents

Wavelength selective detector Download PDF

Info

Publication number
WO2003103060A3
WO2003103060A3 PCT/US2003/018205 US0318205W WO03103060A3 WO 2003103060 A3 WO2003103060 A3 WO 2003103060A3 US 0318205 W US0318205 W US 0318205W WO 03103060 A3 WO03103060 A3 WO 03103060A3
Authority
WO
WIPO (PCT)
Prior art keywords
absorbing
wavelength selective
selective detector
band
wavelength
Prior art date
Application number
PCT/US2003/018205
Other languages
French (fr)
Other versions
WO2003103060A2 (en
Inventor
James K Guenter
Ralph H Johnson
Original Assignee
Finisar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Finisar Corp filed Critical Finisar Corp
Priority to AU2003237521A priority Critical patent/AU2003237521A1/en
Publication of WO2003103060A2 publication Critical patent/WO2003103060A2/en
Publication of WO2003103060A3 publication Critical patent/WO2003103060A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

A wavelength selective detector having a first absorbing layer for absorbing light with a wavelength below a lower band cutoff, a second absorbing layer downstream of the first absorbing layer for absorbing light with a wavelength below an upper band cutoff, and a confinement layer situated between the first and second absorbing layers. The lower and upper band cutoffs can be set by controlling the bandgaps and/or thicknesses of the first and second absorbing layers. The wavelength selective detector of the present invention has a good out-of-band rejection, a narrow spectral responsivity, and a high in-band responsivity. In addition, the wavelength selective detector is relatively easy to manufacture using conventional integrated circuit fabrication techniques.
PCT/US2003/018205 2002-06-04 2003-06-03 Wavelength selective detector WO2003103060A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003237521A AU2003237521A1 (en) 2002-06-04 2003-06-03 Wavelength selective detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/162,928 US6693311B2 (en) 2002-06-04 2002-06-04 Wavelength selective detector
US10/162,928 2002-06-04

Publications (2)

Publication Number Publication Date
WO2003103060A2 WO2003103060A2 (en) 2003-12-11
WO2003103060A3 true WO2003103060A3 (en) 2004-08-19

Family

ID=29583646

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/018205 WO2003103060A2 (en) 2002-06-04 2003-06-03 Wavelength selective detector

Country Status (4)

Country Link
US (1) US6693311B2 (en)
AU (1) AU2003237521A1 (en)
TW (1) TWI234291B (en)
WO (1) WO2003103060A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7683308B2 (en) * 2004-01-12 2010-03-23 Ecole Polytechnique Federale de Lausanne EFPL Controlling spectral response of photodetector for an image sensor
US7501628B2 (en) * 2005-02-14 2009-03-10 Ecole Polytechnique Federale De Lausanne Epfl Transducer for reading information stored on an optical record carrier, single photon detector based storage system and method for reading data from an optical record carrier
US7547872B2 (en) * 2005-02-14 2009-06-16 Ecole Polytechnique Federale De Lausanne Integrated circuit comprising an array of single photon avalanche diodes
JP2022084037A (en) * 2020-11-26 2022-06-07 エイブリック株式会社 Light receiving element, photodetection device, and light detection method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020005524A1 (en) * 2000-07-13 2002-01-17 Masanobu Kato Semiconductor photoreceiving device
US6396117B1 (en) * 1998-08-31 2002-05-28 Oki Electric Industry Co., Ltd Semiconductor photodetector, method for manufacturing semiconductor photodetector and photodetector module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857727A (en) 1988-05-12 1989-08-15 Honeywell Inc. Optically powered remote sensors with timing discrimination
JP3292894B2 (en) * 1993-05-12 2002-06-17 日本電信電話株式会社 Integrated light receiving circuit
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
US5770868A (en) * 1995-11-08 1998-06-23 Martin Marietta Corporation GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396117B1 (en) * 1998-08-31 2002-05-28 Oki Electric Industry Co., Ltd Semiconductor photodetector, method for manufacturing semiconductor photodetector and photodetector module
US20020005524A1 (en) * 2000-07-13 2002-01-17 Masanobu Kato Semiconductor photoreceiving device

Also Published As

Publication number Publication date
US6693311B2 (en) 2004-02-17
TW200404374A (en) 2004-03-16
WO2003103060A2 (en) 2003-12-11
TWI234291B (en) 2005-06-11
US20030222275A1 (en) 2003-12-04
AU2003237521A1 (en) 2003-12-19

Similar Documents

Publication Publication Date Title
IL156744A0 (en) Depletion-less photodiode with supp ressed dark current and method for producing the same
TW200618319A (en) Solar cells having a transparent composition-graded buffer layer
KR101395266B1 (en) Radiation detector
WO2007143585A3 (en) Residue free hardmask trim
JP2007080920A (en) Avalanche photodiode
US8212285B2 (en) Radiation detector
WO2008099524A1 (en) Photoelectric converter and method for fabricating the same
WO2004106987A3 (en) Impurity-based waveguide detectors
EP1811578A4 (en) Avalanche photodiode
WO2009099282A3 (en) Solar cell having multiple transparent conductive layers and manufacturing method thereof
WO2008156337A3 (en) Solar cell, method of fabricating the same and apparatus for fabricating the same
TW200725919A (en) Solar cell with superlattice structure and fabricating method thereof
WO2009100023A3 (en) A multijunction photovoltaic device
EP1437609A4 (en) Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film
WO2010065635A3 (en) Sub-wavelength metallic cone structures as selective solar absorber
WO2003103060A3 (en) Wavelength selective detector
WO2009031206A1 (en) Semiconductor laser element, and semiconductor laser element manufacturing method
TW200725167A (en) Mask and fabrication method thereof and application thereof
WO2008147486A3 (en) Methods of fabricating nanostructured zno electrodes for efficient dye sensitized solar cells
WO2011014559A3 (en) Lattice-matched chalcogenide multi-junction photovoltaic cell
WO2004100224A3 (en) Pin photodetector
WO2007107973A3 (en) Reduced dark current photodetector
WO2008078171A3 (en) Method of filtering spectral energy
JP2004200302A5 (en)
EP1743535A3 (en) Respiratory mask comprising a protective strip

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP