WO2003097894A2 - Sputtering cathode adapter - Google Patents

Abstract

An adapter assembly (130) is provided for supporting a sputtering cathode (14) in a fixed opening (15) in the chamber of a sputter coating machine (10). The assembly includes: one of several adapter bodies (32), each configured to support, in the fixed opening (15), a target (11) of one of a plurality of sizes and types, and at one of several target-to-substrate spacings; one of several insulator rings (36), each for a target of a different size or type; one of several dark-space shields (40), each for a target of a different size, type, material, or processing pressure; and one of several adapter shields (41), each for a different adapter body (32) and target material. Only the shields (40, 41) accumulate deposits and require cleaning or replacement. The dark-space shield (40) is spaced from the target rim by a gap of at 0.045 to 0.067 inches to form a deep narrow space (49) that prevents deposits onto the insulator ring (36) while avoiding arcing and plasma formation in the gap (49). A method is provided for existing sputtering machines (10) with the assembly (30), which accommodates different targets (11) and processes.

Description

SPUTTERING CATHODE ADAPTERASSEMBLYAND METHOD

[0001] This application claims priority to U.S. Provisional Patent Application Serial No. 60/380,363, filed May 14, 2002. Field of the Invention

[0002] This application relates to the mounting of sputtering cathode assemblies in wafer processing machines, particularly those of the type described in U.S. Patent Nos. 4,909,695; 4,915,564 and 5,516,732, each hereby expressly incorporated herein by reference. Machines of this type are marketed under the trademarks ECLIPSE, ECLIPSE MARK II and ECLIPSE STAR by Applicant's assignee, Tokyo Electron Limited. These machines have vertical plenums in which an index plate rotates to carry wafers in a plurality of wafer holders spaced around the plate to each of a corresponding plurality of processing chambers. The application particularly relates to tire mounting of sputtering cathode assemblies in sputter deposition chambers of such machines. Background of the Invention

[0003] Sputter coating machines, particularly those of the type identified above, are used in the manufacture of semiconductors. During a semiconductor manufacturing process, such machines sputter a thin layer, often of metal, onto a substrate, typically a semiconductor wafer of silicon or some other semiconductor material. The material that forms the deposited layer is supplied by ion bombardment of a target. Many types of targets are used in the same machines depending on the process to be performed and the semiconductor makers other requirements. Such targets are sometimes formed of a solid piece of sputtering material while others are formed of a mass of sputtering material bonded to a backplate. Targets of any of more than one size may usually be used in the same chamber of a sputtering machine. For example, in the machines referred to above, targets having nominal diameters of ten inches and twelve inches are available. While ten inch targets for these machines are typically 10.000 +/- 0.005 inches in diameter, nominal twelve inch targets are actually 11.625 +/- 0.005 inches in diameter. These targets are approximately one inch thick, which thickness declines over the life of the target as the sputtering material is consumed in the course of coating a large number of wafers, typically several thousand.

[0004] Sputtering targets of the vertical plenum machines referred to above are part of a sputtering cathode sub-assembly that mounts in an opening in the wall of a sputtering chamber in such machines. A sputtering surface of the target lies in the sputtering chamber and faces a semiconductor wafer that is to be coated with the material of which the sputtering surface of the target is formed. At the back of the target is fixed a magnet assembly that forms a magnetic field over the surface of the target to confine and enhance a plasma from which ions of gas for sputtering the target originate. In the machines referred to above, this magnet assembly typically includes an array of magnets that rotate behind the target. The provision of targets of two sizes (ten and twelve inch) and of two types (solid and backed) produces cathode assemblies for each of four distinct dimensional configurations for the same chamber of the machine.

[0005] The vertical plenum sputtering machines of the type identified above are high speed machines that cycle wafers through a series of processing stations by rotating wafer holders on an index plate in a vertical plane. The efficiency of such machines is in part due to indexing of the wafers in a fixed processing plane among the plurality of processing stations. Different processes, however, call for different target-to-wafer spacings. As a result, each of the four target configurations described above must be adapted to two or three different mounting positions in the chambers of the processing machine. This requires a variety of alternative adapter configurations so that any of the targets can be properly installed in the machine chamber for the performance of the various processes at the different target-to-wafer spacings.

[0006] In operation, the one of the cathode assemblies that is installed in a processing chamber of the machine has applied electrical power to it in the course of perfoπning the sputtering process. This necessitates the insulating of tire cathode assembly from the grounded wall of the machine. Annular insulators are used between the target or cathode assemblies and the machine housings, typically around the insides of the mounting adapters that hold the cathode assemblies in cathode mounting openings provided in one side of the chamber.

[0007] When the cathode assembly is installed in the processing chamber of a machine, the target surface faces a wafer holder for the semiconductor substrate across the chamber of the machine. During the sputtering process, electrical power and a negative charge are applied to the target, which causes gases in the chamber to become ionized to form a plasma and the negatively biased target to be bombarded with positive ions from the plasma. The bombarding causes atoms of the target material to be dislodged from the target, which then become mixed with the atoms of gases within the chamber. The object of the sputter coating process is to coat the wafer with the sputtered atoms of target material. However, the process also coats other surfaces facing the target as well as chamber component surfaces facing the gases within the chamber that scatter the sputtered atoms of material onto other surfaces. These surfaces include surfaces around the target and the mounting structure that holds the target in the opening in the chamber wall. Surface finishes and temperature gradients of surfaces in the chamber also affect the tendency for sputtered material to build up on these surfaces.

[0008] Dining the sputtering process, the material being sputtered builds up at specific areas on surfaces within the chamber. The buildup can cause spikes of coating material to form on these surfaces and create an icicle-like structure that can cause arcing and electrical shorts. The arcing can eventually cause the equipment to detect an electrical error condition and power down. Tins requires opening of the chamber and the possible loss of an expensive partially processed wafer. The buildup can also cause material to flake off of the parts during the sputtering process and to light upon and contaminate the semiconductor wafers being processed. Such contamination on the wafer surfaces can adversely affect the operation of the semiconductor devices or integrated circuits being made on the wafer. Such buildups require the stopping of the equipment and the cleaning of the chambers, resulting a loss of productivity of expensive manufacturing assets.

[0009] One particular area where coating buildup can occur is on the surface of the insulator between the target or cathode assembly and the grounded mounting structure surrounding the cathode. Buildup of coating material, particularly where that material is metal, can cause a shorting of the power from the cathode to the grounded frame of the machine, which can cause damage and down time to the equipment and loss of wafers in the chambers of the machine.

[0010] Fig. 1 illustrates a target assembly 17 of an ECLIPSE type machine 10, discussed above, which includes a target 11 formed of a mass of sputter coating material and bonded to a metal backing plate 12. The backing plate 12 is secured to a rotating magnet assembly 13 to form an assembled cathode assembly 14. The cathode assembly 14 is mounted in a fixed size opening 15 in the door 16 of a chamber 18 of the processing apparatus 10, in which chamber 18 is a semiconductor wafer (not shown) mounted parallel to the target 11 for processing. An adapter ring 20, configured to support the specific target assembly 17 in the opening 15, is sealed to the chamber door 16 around its outer run. The adapter 20 has an inner opening 21 in which the target assembly 17 is situated. An annular electrical insulator 22 is situated in the opening 21 and sealed to both the rim of the target assembly 17 and the adapter 20, as illustrated in Fig. 1A. A certain tolerance or spacing 23 around the insulator 22 is typical to accommodate the target assembly 17. The adapter 20 supports a grounded annular dark space shield 25 around the perimeter of the target 11.

[0011] During a sputter coating process, target material from the target 11 enters an annular space 26 between the rim of tire target 11 and the adapter 20, and forms deposits 27 on the surfaces of the dark space shield 25 and the insulator 22. Plasma also can form in this space 26, which can sputter material from the edge of the target and re-sputter the deposited material 27 and redistribute it further into the space 26. A coating of conductive material 27 can eventually build up on these surfaces, including the surface of the insulator 22, thereby forming an electrically-conductive path 28 between the target assembly 14 and the grounded adapter ring 20, causing a current path through which power on the target assembly 14 can short to ground. This damaging occurrence has been avoided in this prior art structure by interrupting the operation of the machine 10 on one or more occasions during the life of a target and removing the adapter 20 and insulator 22 for replacement and cleaning. This interruption results hi machine down-time and increases the cost of semiconductor wafers manufactured with the machine 10.

[0012] There is a need to improve the efficiency and reduce the costs of semiconductor wafer manufacture by solving the problems discussed above. Summary of the Invention

[0013] An objective of the present invention is to improve the efficiency and reduce the overall cost of semiconductor wafer sputter coating processes. A particular objective of the invention is to facilitate the operation of a sputter coating machine for the life of a target without the need to interrupt the operation to remove, clean or replace cathode assembly insulators or mounting adaptors due to buildup of deposits.

[0014] A further objective of the invention is to reduce the cost of servicing sputter coating machines and of configuring such machines with targets and target assemblies of various types.

[0015] A particular objective of tire present invention is to accomplish the above objectives for sputtering machines of the ECLIPSE type.

[0016] According to the principles of the present invention, an adapter assembly system is provided for mounting targets of differing types in a semiconductor wafer processing machine, and particularly in a sputter coating machine of the ECLIPSE type.

[0017] According to certain principles of the invention, an adapter assembly is provided for a sputtering target that is configured in relation to the sputtering cathode assembly of which the target is a part to prevent deposition of coating material during the life of a target to a degree that would require service of the insulator to avoid shorting of power from the target or arcing across the insulator. [0018] According to further principles of the invention, an adapter assembly system is provided with a limited number of alternative parts that allow a mounting adapter for more than one sputtering cathode to be assembled with a reduced number of parts and hi such a way that parts that receive deposits can be economically replaced and reconditioned.

[0019] According to certain embodiments of the invention, an adapter assembly system is provided with alternative adapter bodies to accommodate targets of different sizes or shapes and for processes requiring different target-to-wafer spacings. The system is further provided with alternative dark space shields, alternative removable adapter shields and alternative insulator rings, which provide a small number of combinations of parts and economically accommodate different target and process combinations.

[0020] In accordance with specific embodiments of the invention, specific adaptor solutions are provided for specific target and machine applications, according to the geometrical configurations set forth in detail below.

[0021] According to one method of the present invention, an adapter is provided with geometry that properly positions a target and cathode assembly in a sputter deposition chamber relative to a position of a wafer to be processed. Different adapter geometries are provided to properly position different targets of different sizes or configurations or materials in a fixed opening or other cathode mounting structure of the processing chamber.

[0022] Further according to methods of the invention, the adapters are provided with adapter shields or cladding that can be removed, cleaned or replaced, which allows the body of the adaptor to be directly reused by shield replacement, minimizing the need to replace or clean the adaptor body.

[0023] Also according to methods of the invention, adapter ring geometries are provided to accommodate targets of different diameters in different target-to-wafer spacings, each of wliich of the geometries will accommodate different target types. Further, alternative ring insulators are provided of different insulator configurations, wliich have the capability of adapting targets or catliode assemblies of different types to the same adaptor bodies.

[0024] Further according to methods of the invention, dark space shields are provided that are dimensioned for use with targets of corresponding dimensions so as to provide a deep narrow space between the shield and the target having a width that will avoid the generation of plasma in the narrow space and reduce the likelihood of sputtered material from passing through the narrow space and onto the surface of the insulator that separates the target and catliode assembly from the chamber or adapter structure in which the target and catliode assembly are mounted. This width is related to pressure according to Paschen's Law. In accordance with the invention, the chamber is capable of being operated and is operated for the life of the target, without interruption of the operation for the purpose of removing deposits that might otherwise cause arcing or shorting at the insulator. The provision of dark space shields of different internal diameters enhances this capability.

. [0025] According to methods of the present invention, different combinations of adapter bodies, adapter shields, insulator rings and dark space shields are provided and are capable of being used to adapt a variety of targets-to-wafer processing machines, particularly those of the ECLIPSE type, with a mhiirnum of parts consistent with the minimum overall cost of ownership and operation of the machine. [0026] The system and method accoidmg to the piesent invention is capable of providing an upgiade adaptei assembly to be used for installing a magnetton cathode assembly particulaily useful in machines such as those of the ECLIPSE type identified above The adapter is a reusable metal part that facilitates the installation of the cathode assembly with its taiget to a standaid mounting opening in the processing chambei of the machine The assembly provides protective shielding of parts wifhui the sputtering chambei to alleviate electrical shorting and contamination during the sputteimg process, and to l educe the need to interrupt the opeiation of such machines for cleamng The adaptei assemblies of the system also set the lequired taiget- to- wafei spacing for diffeient sputteimg piocesses The adapters of the system are equipped with watei cooling for temperatuie control

[0027] The invention provides foi the use of a smgle sputter coating chambei with different targets and target mounting paiameteis using an economical set of paits foi adaptmg the chamber to the taiget Interruption of the operation of the chamber for cleanmg is less frequent and lequnes changmg oi cleamng of the least expensive parts The likelihood of spaik dischaige around the taiget and compromise of the msulatois is reduced

[0028] These and othei objectives and advantages of the invention are moie fully set forth in the following detailed description of the diawmgs Brief Description of the Drawings

[0029] Fig. 1 is a cioss-sectional diagiam illustrating a sputteimg cathode assembly installed m a processing chamber with adapter hardwaie of the pnoi ait

[0030] Fig. 1A is an enlaiged view of the enciicled portion of Fig. 1 designated 1A

[0031[ Fig. 2 is a cioss-sectional diagiam lllustiating a sputtering cathode assembly installed m a processing chamber with adapter hardwaie accoidmg to one embodiment of the piesent invention for use with a type of target designated heiein as type RM

[0032] Fig. 2A is an enlaiged diawmg of a portion of Fig. 2 lllushatmg the cioss-sectional diagram lllushatmg a sputteimg cathode assembly installed in a piocessmg chambei with adapter hardware according to one embodiment of the piesent invention for use with an alternative type of target designated herem as type SPA

[0033] Fig. 3 is a disassembled cioss-sectional diawmgs of the assemblies of Fig. 2 and 2A respectively

[0034] Figs. 4 and 4A aie cioss-sectional diawmgs, similai to Figs. 2 and 2A, lespectively, moie particularly describing the alternative combinations of adapter assembly components for use with cathode assemblies having nominal ten inch taigets

[0035] Figs. 5 and 5A aie cioss-sectional diawmgs, similar to Figs. 4 and 4A, lespectively, moie particularly describing the alternative combmations of adaptei assembly components foi use with cathode assemblies having nominal twelve inch taigets

[0036] Figs. 6A - 6E, 6G and 6H show schematic views of an adaptei body m accordance with an embodiment of the invention

[0037] Figs. 7A and 7B shows schematic views of an insulator in accordance with an embodiment of the invention [0038[ Figs. 8A and 8B shows schematic views of another insulator hi accordance with an embodiment of the invention.

[0039[ Figs. 9A and 9B shows schematic views of a dark space shield hi accordance with an embodiment of the invention.

[0040[ Figs. 10A and 10B shows schematic views of another dark space shield in accordance with an embodiment of the invention.

[0041] Figs. 11A and 11B shows schematic views of an adapter shield in accordance with an embodiment of the invention.

[0042] Figs. 12A - 12G show schematic views of another adapter body in accordance with an embodiment of the invention.

[0043] Figs. 13A and 13B shows schematic views of another insulator hi accordance with an embodiment of the invention.

[0044] Figs. 14A and 14B shows schematic views of another insulator hi accordance with an embodiment of the invention.

[0045] Figs. 15A and 15B shows schematic views of another dark space shield in accordance with an embodiment of the invention.

[0046] Figs. 16A and 16B shows schematic views of another dark space shield i accordance with an embodiment of the invention. Detailed Description of the Drawings

[0047] In Fig. 2, the cross section of an improved sputtering catliode assembly 14, such as shown in Fig. 1 and designated herein as the RM type, is illustrated. The catliode assembly 14 includes a target 11 bonded to a metal backing plate 12 that is seemed to a rotating magnet assembly 13 to form the assembled cathode assembly 14. The catliode assembly 14 is held by clamps 31 in an adapter assembly 30 which supports the catliode assembly 14 in a fixed size opening 15 in the door 16 of a chamber 18 of a processing apparatus. The adapter assembly 30 includes a combination of parts configured to support a specific target 11 and catliode assembly 14 in the opening 15, sealed to the chamber door 16 around the rim of the opening 15.

[0048] The adapter 30 is formed of an annular adapter body 32 to which the clamps 31 are attached. The body 32 has an outer flange 33 that carries a seal 34 that seals to the door 16 around the opening 15 and has an inner shoulder 35 on which rests an annular insulator 36. The cathode assembly 14 is held agahist the insulator 36 by the force of the clamps 31. Both the adapter body 32 and the target assembly 14 are provided with seals that contact and seal against the insulator 36. The portion of the catliode assembly 14 that seals against the insulator is an outwardly extending flange on the back of the target 11, in this case on the backing plate 12 to which the target 11 is bonded, wliich has a seal 37 hi a groove in the flange of the backing plate.

[0049] To accommodate target assemblies 14 for different size targets in the opening 15, adaptor bodies 32 of different configurations are provided. For example, to accommodate both standard nominal ten inch and nominal twelve inch targets, two alternative adaptor bodies 32 are provided. Further, different types of targets 11 of the same size are accommodated. For example, in Fig. 2, a target 11 having a backing plate 12 is illustrated. A target of this type is referred to herehi as a type RM target, behig designed for a rotating magnet type cathode assembly of the type illustrated in Fig. 2, which includes a rotating magnet assembly 13, wliich is driven by a drive motor 13a. Alternatively, a target 11a, illustrated in the inset enlarged drawing of Fig. 2 A, is a single piece aluminum target that has an integral flange 12a on wliich is supported an insulator 36a of an alternative configuration for fitting against the different target 11a. The insulator 36a has a seal 37a a groove in the back of the insulator 36a that seals against the flange 12a at the back of the target 11a.

[0050] An annular dark space shield 40 is fixed to the adapter body 32, as illustrated in Fig. 2. A dark space shield 40a of a slightly different configuration than the shield 40 is provided for the target 11a, as illusttated in Fig. 2A. The differences between the dark space shields 40 and 40a are dictated by the differences in the targets 11 and 11a and the respective differences that they impose on the insulators 36 and 36a. An adapter shield 41 is also provided to cover the adapter body 32 to protect from deposits and the effects of the plasma. The adapter shield 41 clads the outside of the body 32 and can be removed for cleaning or replacement. The body 32 is otherwise reusable.

[0051[ Fig. 3 illustrates the parts of the adapter assembly 30 in more detail for RM and SPA type targets 11, 11a respectively. The insulators 36, 36a are preferably fabricated of "Virgin TEFLON" PTFE Grade 7A or 8, which provides electrical insulation between the target 11,11a, which is energized by a cathode power supply (not shown), and the adaptor assembly 30, which is grounded to the machine ground. The target and catliode assembly 14 operates at a negative potential, so that the insulation must be maintained for the sputtering process and for safety.

[0052] The body 32 of the assembly 30 is preferably fabricated from aluminum 6061-T6, which provides the interface for mounting the cathode assembly and target to the apparatus. As illustrated in Fig. 3, the body 32 has a copper cooling tube 43 in thermal contact therewith for water cooling and temperature control of the adapter body 32. The cathode assembly 30 is seemed to the apparatus with fom clamps (e.g., 31 in Fig. 2) that are made of, for example, a phenolic material to further electrically isolate the cathode assembly 14 from the adapter body 32.

[0053] The dark space shield 40,40a is fabricated from non-magnetic 316L stainless steel or aluminum 6061-T6/T651, depending on the sputtering process to be ran. Dark space shields of these and other alternative materials may be provided for each of the configurations for shields 40,40a, depending on the processes for wliich each is required. During fabrication of the dark space shields 40,40a, the smfaces of the shields 40,40a that will be h the line-of-site of the target 11,11a are abrasive blasted or otherwise roughened to insure that what deposits occur on those surfaces are less likely to flake off during processing.

[0054] Various components of the adapter shield assembly 30 and other parts in the chamber 18 (Fig. 2) receive deposition of material from the target. Such material can build up and eventually flake off if the part does not have a good base coating. Flaking can cause contamination within the process chamber and on the substrate surface. Surface treatment such as abrasive blasting better allows the material deposits to adhere to the parts and form a desired base coating. Eventually, all parts hi the line-of-site of the target will require cleaning and re-abrasive blasting or replacement. [0055] Tolerances on dimensions of the dark space shields 40,40a should be tightly controlled to control the space between Hie dark space sliield and the target 11,11a. This might requhe the stocking of alternative dark space shields 40,40a if the tolerances on the outer target diameters vary. These tolerances affect the spacing or gap 49 between the target 11,11a and the dark space shield 40,40a. The spacing between the target 11,11a and the dark space sliield 40,40a should be small enough to insure that plasma does not form within this gap 49. For example, when running standard pressure sputtering processes, typically in the range of 2.0 to 3.0 milli-Torr, the space between the dark space shield and the target should be held to within a dimension of 0.062 +/- 0.005 inches; when running a high pressure sputtering process, e.g., 10.0-15.0 mTorr, the space should be held to within 0.050 +/- 0.005 inches. The spacing 49 should include allowances for tolerances of +/- 0.005 inches on the dark space sliield and +/- 0.005 inches on the target. When the spacing 49 is not kept small enough to prevent plasma from forming between the target and the dark space shield, extreme deposition and icicle-like deposits can form that can cause the undesirable electrical arcing and shorting referred to above. For general purposes, the gap 49 should not be less than 0.045 inches. The maximum gap 49 is less consequential and greater deviations from the maximums can be somewhat tolerated. These considerations can be used if it is necessary to use a single dark space shield for the entire operating pressure range.

[0056] Dark-space shields dimensioned for tlie specific pressme are preferred. For example, for ten hich targets, the inwardly facing surface of the dark-space sliield may have an hiside diameter of 10.124 +/- 0.005 inches for standard pressme processes and 10.100 +/- 0.005 inches for high pressure processes. For twelve inch targets (11.625 inch actual diameter), the inside diameter may be 11.749 +/- 0.005 inches for standard pressme processes and 11.725 +/- 0.005 inches for high pressure processes.

[0057] In addition to the need for one configuration of adapter body 32 for each target 11 , 11 a of a particular diameter, the number of adapter bodies 32 that may be necessary is multiphed by the number of target diameters. For example, to accommodate a type RM cathode and a type SPA cathode hi both nominal ten inch and nominal twelve inch diameters, fom configurations of adapter bodies 32 are required. Further, different target-to-wafer spacings might be required for the processes with some or all of the targets. As illustrated in Figs. 4, 4A, 5 and 5A, accommodations of such spacings can be provided with different height adaptor bodies.

[0058] For example, this is depicted in Fig. 4, wliich illustrates the assemblies for ten inch type RM targets and Fig. 4A, which illustrates the assemblies for ten inch SPA targets. Fom tables, Tables 4-1 through 4-4 are keyed to Figs. 4 and 4A and identify various alternative parts, as follows:

[0059] Table 4-1

[0060] Table 4-2

[0061] Table 4-3

[0063] Table 4-1 lists three adapter bodies, 32-1, 32-2 and 32-3, for accommodating target-to- wafer spacings of 1.7", 2.0" and 2.5". Each of these is suitable for either type RM or type SPA targets. Two different insulator configurations, 36-4 and 36-5, are identified in Table 4-2, wliich adapt the two types of targets to each of the different size bodies 32. Table 4-4 identifies tliree adapter shields 41 to clad each adaptor body 32, which are provided in two materials each for compatibility with different processes. These adapter sliields may be identified as 41-12 through 41-17. Table 4-3 identifies alternative dark space shields 40-6 through 40- 11. These fit on any of the three adapter bodies 32 to accommodate different target materials and types. As shown in the illustrated embodhnent, adapter body 32 has an outside diameter 70 of at least approximately 14.49 inches and an inside diameter 75 of at least approximately 11.12 inches. [0064] Similarly, Fig. 5 also includes two figures, Fig. 5 (left side), which illusfrates the assemblies for twelve inch type RM targets, and Fig. 5A (right side), which illustrates the assemblies for twelve inch SPA targets. Three tables, Tables 5-1 through 5-3 are keyed to Figs. 5 and 5A and identify various alternative parts, as follows:

[0065] Table 5-1

[0066] Table 5-2

[0067] Table 5-3

[0068] Table 5-1 lists two adapter bodies, 32a-l and 32a-2, for accommodating target-to-wafer spacings of 2.0" and 2.5", each of which is suitable for either type RM or type SPA targets. Two different insulator configurations, 36a-3 and 36a-4, are identified in Table 5-2, wliich adapt the two types of targets to each of the different size bodies 32a. Table 5-3 identifies different adapter shields 41a-9 through 41a-14 to clad each of the two adaptor bodies 32, which are provided in different materials for compatibility with different processes. Table 5-3 also identifies alternative dark space shields 40a-5 through 40a-8, which fit on either of the two twelve inch adapter bodies 32a to accommodate different target materials and types. As shown in the illustrated embodiment, adapter body 32a has an outside diameter 80 of at least approximately 14.49 inches and an inside diameter 75 of at least approximately 12.77 inches.

[0069] Figs. 6A - 6H show schematic views of an adapter body in accordance with an embodiment of the invention. Fig. 6A shows a top view; Fig. 6B shows a side view; and Fig. 6C shows a bottom view. Fig. 6D shows a more detailed side view of an adapter body. The terms "top", "bottom" and "side" are chosen for convenience only, with "top" referring to the cathode side and "bottom" referring to the wafer or chamber side of the adapter assembly. In the machines for wliich these adapters are suited, the target faces sideways toward a wafer supported in a vertical plane.

[0070] Adapter body 32 comprises outer flange 610, ring portion 620, and inner shoulder 630. Outer flange 610 comprises inner surface 610a, top smface 610b, an outer surface 610c, and a bottom surface 610d. Ring portion 620 comprises an inner smface 620a coupled to the top surface 630b of tlie inner shoulder 630 and an outer smface 620c coupled to the bottom surface 610d of the outer flange. Inner shoulder 630 comprises inner smface 630a, top surface 630b coupled to the inner smface 620a of ring portion 620, an outer smface 630c coupled to the outer surface 620c of ring portion 620, and a bottom smface 630d coupled to the inner surface 630a and the outer smface 630c.

[0071] Outer flange 610 can comprise a number of through-holes 640 extending from tlie top surface 610b to the bottom smface 610d. For example, hole 640 can have a diameter of at least 0.25 inches. Holes 640 can have angular displacements of approximately 30 degrees. Holes 640 can be located on a circle 673 having a diameter of approximately 13.87 inches.

[0072] Outer flange 610 can comprise a number of through-holes 670 extending from the top surface 610b to the bottom surface 610d. For example, hole 670 can have a diameter of at least 0.25 inches and helicoils can be installed in holes 670. Holes 670 can have angular displacements 671 and 672 of approximately 100 degrees and approximately 80 degrees. Holes 670 can be located on a circle 673 having a diameter of approximately 13.87 inches.

[0073] Outer flange 610 can comprise a number of non-through-holes 644 in tlie top surface 610b. For example, hole 644 can have a diameter of at least 0.25 inches, and helicoils can be installed in holes 644. Holes 644 can be located on a circle 675 having a diameter of approximately 11.62 inches.

[0074] Outer flange 610 can comprise an amiular groove 642, and a cooling element (not shown) can be installed in the groove. For example, amiular groove 642 can be located on tlie top smface 610b of the outer flange and can have a diameter 674 of approximately 13.12 inches. Outer flange 610 can comprise another annular groove 646, and an o-ring (not shown) can be installed in the groove. For example, annular groove 646 can be located on the bottom smface 610d of the outer flange, can have an hiside diameter 688 of approximately 12.99 inches, and can have a width of approximately 0.15 hiches. Outer flange 610 can comprise a number of non-through-holes 648 in tlie bottom smface 610d, and helicoils can be installed in holes 644.

[0075] Inner shoulder 630 can comprise a number of non-through-holes 648 and 650 in the bottom surface 630d. For example, holes 648 and 650 can have diameters of at least 0.14 inches, and helicoils can be installed hi holes 648 and 650. [0076[ Inner shoulder 630 can comprise annular groove 652, and an o-ring (not shown) can be installed in the groove. For example, annular groove 652 can be located on the top surface 630b of the inner shoulder 630, can have an inside diameter 680 of approximately 10.77 +/- .015 hiches, and can have a width of approximately 0.125 inches.

[0077] In addition, outer flange 610 comprises a number of slots 654, For example, slot 654 can have a width of 0.5 inches, and a cooling element (not shown) can be installed using the slots. Outer surface 610c of outer flange 610 can comprise a number of flat smfaces 656 and a number of curved surfaces 658.

[0078] Outer flange 610 can have an inside diameter 679 of at least approximately 11.185 inches and an outside diameter 678 of at least approximately 14.50 inches. Outer flange 610 can further comprise a step 662 having an inside diameter 687 of approximately 12.08 inches and an outside diameter 688 of at most approximately 13.00 inches. Inner shoulder 630 can have an inside diameter 685 of at least approximately 10.415 inches and an outside diameter 687 of at least approximately 12.08 inches. Inner smface 620a can comprise a lip portion 660.

[0079] Outer flange 610 can have a thickness 681 of approximately 0.51 inches. Step 662 can have a height 682 of approximately 1.08 inches. Inner shoulder 630 can have a thickness 684 of at least approximately 0.25 inches. Body portion 620 can have an inside diameter 686 of at least approximately 11.12 inches.

[0080[ Adapter body 32 can comprise different heights 683 that can be application dependent. For example, in a first application, the height can be approximately 1.44 hiches; in a second application, the height can be approximately 1.94 inches; and in a third application, the height can be approximately 2.24 inches. These heights 683 may correspond to target-to-substrate spacings of 2.5 inches, 2.0 inches and 1.7 inches, respectively. The height 683, less the flange and shoulder thicknesses 681 and 684, produce a net offset from the outer or top surface of the chamber wall 16 to the face or top surface of the target insulator 36 of 0.68, 1.18 and 1.48 inches, respectively.

[0081] In one embodiment, adapter body 32 comprises a single block of material. For example, the adapter body can be fabricated from a block of aluminum, and tlie adapter body can be finished to provide a roughened surface which aids the formation of a uniform coating during processing. Alternately, adapter body 32 can comprise more than one piece.

[0082[ Figs. 7A and 7B show schematic views of an insulator in accordance with an embodiment of the invention. Insulator 36 comprises top ring 710, body portion 720, and bottom ring 730. Top ring 710 comprises inner surface 710a, top surface 710b, and an outer smface 710c. Body portion 720 comprises an inner surface 720a, a top surface 720b coupled to the inner surface 710a of top ring 710, an outer smface 720c coupled to the outer smface 710c of top ring 710, and a bottom surface 720d coupled to the inner surface 720a. Bottom ring 730 comprises inner surface 730a coupled to the bottom smface 720d of the body portion, an outer surface 730c coupled to the outer smface 720c of ring portion 720, and a bottom surface 730d. [0083] Body portion 720 can compiise flattened edges 722, and bottom ring 730 can comprise flattened edges 732 Top smface 720b of body portion 720 can be coupled to the lnnei surface 710a of top ring 710 using a rounded edge 712

[0084] Top rmg 710 can have an side diametei 776 of at least appioximately 10 932 inches and an outside diameter 775 of at most appioximately 11 12 niches Body portion 720 can have an mside diameter 777 of at least appioximately 10 32 inches and an outside diameter 775 of at most appioximately 11 12 inches Bottom ring 730 can have an mside diameter 778 of at least appioximately 10 46 inches and an outside diametei 775 of at most approximately 11 12 inches

[0085[ Top ring 710 can have a height 774 of appioximately 0 29 inches, body portion 720 can have a height 773 of appioximately 0 16 inches, and an bottom ring 730 can have a height 772 of approximately 0 15 inches Insulatoi 36 can have a height 771 of approximately 0 6 inches Heights 772 and 773 should be consistent with the thickness of the body 32 m accordance with the taiget-to-subshate spacing of the application

[0086] In one embodiment, insulator 36 comprises a smgle block of material For example, insulator 36 can be fabncated as a block of TEFLON, and PTFE grade 7 or PTFE giade 8 can be used Alternately, msulatoi 36 can compiise a diffeient insulating matenal

[0087] Figs. 8A and 8B show schematic views of anothei msulator m accordance with an embodiment of the invention Insulatoi 36a comprises top rmg 810, body portion 820, and bottom mig 830 Top rmg 810 compiises inner smface 810a, top s face 810b, and an outer smface 810c Body portion 820 comprises an inner smface 820a, a top smface 820b coupled to the rnnei s face 810a of top lmg 810, an outei smface 820c coupled to the outei smface 810c of top mig 810, and a bottom smface 820d coupled to the inner smface 820a Bottom ling 830 compiises inner surface 830a coupled to the bottom surface 820d of the body portion 820, an outei s face 830c coupled to the outei smface 820c of body portion 820, and a bottom surface 830d

[0088] Body portion 820 can compiise flattened edges 822, and bottom lmg 830 can compiise shaped edges 832 Body portion 820 can compiise an amiulai groove 824 Foi example, annulai groove 824 can be located on the top smface 820b of the body portion 820, can have an mside diameter 877 of approximately 10 47 inches, can have a width 890 of appioximately 0 11 inches, and an o-img (not shown) can be installed m the gioove Top smface 820b of body portion 820 can be coupled to the inner smface 810a of top ring 810 usmg a rounded edge 812

[0089] Top ling 810 can have an mside diametei 876 of at least approximately 10 932 inches and an outside diameter 875 of at most appioximately 11 12 inches Body portion 820 can have an mside diameter 878 of at least approximately 10 32 inches and an outside diameter 875 of at most approximately 11 12 inches Bottom ling 830 can have an mside diametei 879 of at least approximately 10 46 inches and an outside diametei 875 of at most approximately 11 12 inches

[0090] Top mig 810 can have a height 874 of approximately 0 35 mches, body portion 820 can have a height 873 of appioximately 0 17 inches, and a bottom rmg 830 can have a height 872 of appioximately 0 088 inches Insulatoi 36a can have a height 871 of at least appioximately 0 6 inches Heights 872 and 873 should be consistent with the thickness of the body 32 in accordance with tlie target- to-substrate spacing of the application.

[0091] In one embodiment, insulator 36a comprises a single block of material. For example, insulator 36a can be fabricated as a block of TEFLON, and PTFE grade 7 or PTFE grade 8 can be used. Alternately, insulator 36a can comprise a different insulating material.

[0092] Figs. 9A and 9B shows schematic views of a dark space shield in accordance with an embodiment of the invention. Dark space shield 40 comprises top ring 910 and body portion 920. Top ring 910 comprises inner smface 910a, top surface 910b, and an outer surface 910c. Body portion 920 comprises an inner smface 920a coupled to the inner smface 910a of top ring 10, a top surface 920b coupled to the outer surface 910c of top ring 910, an outer surface 920c coupled to the top surface 920b of body 920, and a bottom surface 920d coupled to the outer surface 920c and the inner smface 920a.

[0093] Body portion 920 can comprise shaped edge 922, rounded edges 924, and rounded comer edge 926. Top surface 920b of body portion 920 can be coupled to the outer surface 910c of top ring 910 using a rounded edge 912. Body portion 920 can comprise a number of through-holes 940 extending from the top surface 920b to tlie bottom surface 920d. For example, hole 940 can have a diameter of at least 0.19 inches, and can be counter smil . Holes 940 can have angular displacements of approximately 45 degrees. Holes 940 can be located on a circle 971 having a diameter of approximately 11.50 inches.

[0094[ Top ring 910 can have an inside diameter 977 of approximately 10.10 inches and an outside diameter 975 of approximately 10.405 inches. Body portion 920 can have an inside diameter 977 of approximately 10.10 inches and an outside diameter 974 of at most approximately 12.08 inches. Top ring 910 can have a height 984 of approximately 0.505 inches, and body portion 920 can have a height 981 of approximately 0.244 inches. Top ring 910 can further comprise a step 914 having an inside diameter 976 of at most approximately 10.26 inches and a depth 983 of approximately 0.14 inches. Body portion 920 can further comprise a step 926 having an inside diameter 978 of approximately 10.84 inches and a depth 980 of approximately 0.09 inches. Dark space shield 40 can have a height 979 of approximately 0.74 inches.

[0095] In one embodiment, dark space shield 40 comprises a single block of material. For example, dark space sliield 40 can be fabricated from a block of stainless steel. In addition, dark space shield 40 can have its surface roughened and a coating can be applied. For example, the surface can be blasted and a coating can be applied. Alternately, dark space shield 40 can comprise a different material such as aluminum.

[0096] Figs. 10A and 10B shows schematic views of another dark space shield in accordance with an embodiment of the invention. Dark space shield 40a comprises top ring 1010, and body portion 1020. Top ring 1010 comprises inner surface 1010a, top surface 1010b, and an outer surface 1010c. Body portion 1020 comprises an inner surface 1020a coupled to the inner smface 1010a of top ring 1010, a top smface 1020b coupled to tlie outer surface 1010c of top ring 1010, an outer surface 1020c coupled to the top smface 1020b of body 1020, and a bottom surface 1020d coupled to the outer surface 1020c and the inner smface 1020a.

[0097] Body portion 1020 can comprise shaped edge 1022, rounded edges 1024, and romided comer edge 1026. Top smface 1020b of body portion 1020 can be coupled to tlie outer smface 1010c of top rmg 1010 using a rounded edge 1012. Body portion 1020 can comprise a number of through-holes 1040 extendhig from tlie top surface 1020b to tlie bottom smface 1020d. For example, hole 1040 can have a diameter of at least 0.19 inches, and can be counter sunk. Holes 1040 can have angular displacements of approximately 45 degrees. Holes 1040 can be located on a circle 1071 having a diameter of approximately 11.50 hiches.

[0098] Top ring 1010 can have an inside diameter 1072 of approximately 10.12 inches and an outside diameter 1075 of at most approximately 10.405 inches. Body portion 1020 can have an inside diameter 1072 of approximately 10.12 inches and an outside diameter 1074 of approximately 12.08 inches. Top ring 1010 can have a height 1081 of at least approximately 0.305 hiches, and body portion 1020 can have a height 1079 of approximately 0.244 inches. Body portion 1020 can further comprise a step 1026 having an inside diameter 1077 of approximately 10.4 inches and a depth 1080 of approximately 0.09 inches. Dark space shield 40a can have a height 1078 of approximately 0.54 inches.

[0099[ In one embodiment, dark space sliield 40a comprises a single block of material. For example, dark space shield 40a can be fabricated from a block of stainless steel. In addition, dark space shield 40a can be have its surface roughened and a coating can be applied. For example, tlie surface can be blasted and a coating can be applied. Alternately, dark space shield 40a can comprise a different material.

[0100] Figs. 11A and 11B show schematic views of an adapter shield in accordance with an embodiment of the invention. Adapter shield 41 comprises top ring 1110, and body portion 1120. Top ring 1110 comprises inner surface 1110a, top smface 1110b, an outer surface 1110c, and bottom surface 11 lOd. Body portion 1120 comprises an inner surface 1120a coupled to the inner smface 1110a of top ring 1110, an outer surface 1120c coupled to the bottom smface l l lOd of top ring 1110. Bottom ring 1130 comprises inner smface 1130a, top surface 1130b coupled to the inner surface 1120a of body portion 1120, and a bottom surface 1130d coupled to the outer smface 1120c of body portion 1120.

[0101[ Body portion 1120 can comprise rounded edges 1124, and rounded comers 1126. Top ring 1110 can comprise a number of through-holes 1140 extending from tlie top smface 1110b to the bottom surface 11 lOd lying at 90 degree intervals on a circle of diameter 1172 of approximately 12.563 inches.

[0102] Top rmg 1110 can have an outside diameter 1175 of approximately 12.98 inches and a inside diameter 1176 of at least approximately 12.2 inches. Bottom ring 1130 can have an outside diameter of approximately 12.14 inches and a inside diameter 1173 of at least approximately 10.85 inches.

[0103] Adapter shield 41 can comprise different heights 1174 that can be application dependent. For example, in a first application, t e height can be approximately 0.53 inches; in a second application, the height can be approximately 1.03 inches; and in a third application, the height can be approximately 1.33 inches. The heights 1174 protect adapter bodies that are configured to produce target-to-substrate spacings of 2.5, 2.0 and 1.7 inches, respectively.

[0104] In one embodiment, adapter shield 41a comprises a single block of material. For example, adapter sliield 41a can be fabricated from a block of stainless steel. In addition, adapter shield 41a can be have its surface roughened and a coating can be applied. For example, the smface can be blasted and a coating can be applied. Alternately, adapter sliield 41a can comprise a different material such as aluminum. [0105] Figs. 12A — 12G show schematic views of another adapter body in accordance with an embodiment of the invention. Fig. 12A shows a top view; Fig. 12B shows a side view; and Fig. 12C shows a bottom view. Fig. 12D shows a more detailed side view of an adapter body.

[0106[ Adapter body 32a comprises outer flange 1210, ring portion 1220, and inner shoulder 1230. Outer flange 1210 comprises inner smface 1210a, top surface 1210b, an outer surface 1210c, and a bottom smface 1210d. Ring portion 1220 comprises an imier surface 1220a coupled to the top smface 1230b of the inner shoulder 1230 and an outer smface 1220c coupled to the bottom surface 1210d of the outer flange 1210. Inner shoulder 1230 comprises imier surface 1230a, top surface 1230b coupled to the inner surface 1220a of ring portion 1220, an outer smface 1230c coupled to tlie outer surface 1220c of ring portion 1220, and a bottom surface 1230d coupled to the imier smface 1230a and the outer smface 1230c.

[0107] Outer flange 1210 can comprise a number of through-holes 1240 extending from the top surface 1210b to the bottom surface 1210d. For example, hole 1240 can have a diameter of at least 0.25 inches, and helicoils can be installed in holes 1240. Holes 1240 can have angular displacements of approximately 30 degrees. Holes 1240 can be located on a circle 1273 having a diameter of approximately 13.87 inches.

[0108] Outer flange 1210 can comprise a number of through-holes 1270 extending from the top surface 1210b to the bottom smface 1210d. For example, hole 1270 can have a diameter of at least 0.25 inches and helicoils can be installed in holes 1270. Holes 1270 can have angular displacements 1271 and 1272 of approximately 100 degrees and approximately 80 degrees. Holes 1270 can be located on a circle 1273 having a diameter of approximately 13.87 inches.

[0109] Outer flange 1210 can comprise an amiular groove 1242. For example, annular groove 1242 can be located on the top surface 1210b of the outer flange, can have a diameter 1274 of approximately 13.12 inches, and a cooling element (not shown) can be installed in the groove. Outer flange 1210 can comprise another annular groove 1246. For example, annular groove 1246 can be located on the bottom smface 1210d of the outer flange, can have an inside diameter 1284 of approximately 12.99 inches, can have a width of approximately 0.15 inches, and an o-ring (not shown) can be installed in tlie groove.

[0110] Inner shoulder 1230 can comprise a nmnber of non-through-holes 1248 in the bottom smface 1230d. For example, holes 1248 can have diameters of at least 0.14 inches, and helicoils can be installed in holes 1248.

[0111] Imier shoulder 1230 can comprise amiular groove 1252. For example, annular groove 1252 can be located on the top surface 1230b of the imier shoulder 1230 can have an inside diameter 1281 of approximately 12.30 inches, can have a width of at least approximately 0.125 inches, and an o-ring (not shown) can be installed in the groove.

[0112] In addition, outer flange 1210 comprises a number of slots 1254, For example, slot 1254 can have a width of at least 0.5 inches, and a cooling element (not shown) can be installed using tlie slots. Outer surface 1210c of outer flange 1210 can comprise a nmnber of flat smfaces 1256 and a number of curved smfaces 1258. [0113] Outer flange 1210 can have an inside diameter 1280 of at least approximately 12.74 inches and an outside diameter 1278 of at least approximately 14.50 hiches. Body portion 1220 can further comprise a step 1262 having an inside diameter 1283 of approximately 12.92 hiches and an outside diameter 1284 of at most approximately 13.00 inches. Inner shoulder 1230 can have an inside diameter 1282 of at least approximately 12.12 inches and an outside diameter 1283 of at most approximately 12.92 inches. Inner surface 1220a can comprise a lip portion 1260.

[0114] Outer flange 1210 can have a thickness 1285 of approximately 0.51 inches. Step 1262 can have a height 1286 of approximately 0.86 inches. Imier shoulder 1230 can have a thickness 1288 of approximately 0.49 inches. Body portion 1220 can have an inside diameter 1280 of at least approximately 12.74 inches.

[0115] Adapter body 32a can comprise different heights 1287 that can be application dependent. For example, in a first application, the height can be at least approximately 1.62 inches and in a second application, the height can be at least approximately 2.12 inches. These heights 1287 may correspond to target-to-substrate spacings of 2.5 inches and 2.0 inches, respectively. The height 1287, less the flange and shoulder thicknesses 1285 and 1288, produce a net offset from the outer smface of the chamber wall 16 to the face of the target insulator of 0.68 and 1.18 inches, respectively.

[0116] In one embodiment, adapter body 32a comprises a single block of material. For example, adapter body can be fabricated from a block of aluminum, and adapter body can be finished to provide a roughened smface which aids the formation of a uniform coating during processing. Alternately, adapter body 32a can comprise more than one piece.

[0117] Figs. 13A and 13B shows schematic views of another insulator in accordance with an embodiment of the invention. Insulator 36' comprises top ring 1310, body portion 1320, and bottom ring 1330. Top ring 1310 comprises inner surface 1310a, top smface 1310b, and an outer smface 1310c. Body portion 1320 comprises an imier surface 1320a, a top surface 1320b coupled to the imier surface 1310a of top ring 1 10, an outer smface 1320c coupled to the outer smface 1310c of top ring 1310, and a bottom smface 1320d coupled to the outer surface 1320c. Bottom ring 1330 comprises inner smface 1330a coupled to the inner surface 1320a of the body portion, an outer smface 1330c coupled to the bottom surface 1320d of body portion 1320, and a bottom smface 1330d.

[0118] Body portion 1320 can comprise shaped edge 1322, and bottom ring 1330 can comprise shaped edges 1332. Top surface 1320b of body portion 1320 can be coupled to the inner smface 1310a of top ring 1310 using a rounded edge 1312.

[0119] Top ring 1310 can have an inside diameter 1376 of at least approximately 12.55 inches and an outside diameter 1375 of at most approximately 12.74 inches. Body portion 1320 can have an inside diameter 1377 of at least approximately 11.94 niches and an outside diameter of at most approximately 12.74 inches. Bottom ring 1330 can have an inside diameter 1377 of at least approximately 11.94 inches and an outside diameter 1378 of at most approximately 12.12 inches.

[0120] Top ring 1310 can have a height 1374 of approximately 0.25 inches; body portion 1320 can have a height 1373 of approximately 0.125 inches; and an bottom ring 1330 can have a height 1372 of approximately 0.063 inches. [0121] In one embodhnent, insulator 36' comprises a single block of material. For example, insulator 36' can have a height 1371 of approxhnately 0.43 inches, can be fabricated as a block of TEFLON, and PTFE grade 7 or PTFE grade 8 can be used. Alternately, insulator 36' can comprise a different insulating material.

[0122] Figs. 14A and 14B shows schematic views of an insulator hi accordance with an embodhnent of tlie invention. Insulator 36' comprises top ring 1410, body portion 1420, and bottom ring 1430. Top ring 1410 comprises inner surface 1410a, top smface 1410b, and an outer smface 1410c. Body portion 1420 comprises an inner smface 1420a, a top surface 1420b coupled to the inner surface 1410a of top ring 1410, an outer surface 1420c coupled to the outer surface 1410c of top ring 1410, and a bottom smface 1420d coupled to the inner surface 1420a. Bottom ring 1430 comprises inner surface 1430a coupled to the bottom surface 1420d of the body portion, an outer smface 1430c coupled to tlie outer surface 1420c of body portion 1420, and a bottom surface 1430d.

[0123[ Body portion 1420 can comprise shaped edges 1422, and bottom rmg 1430 can comprise shaped edges 1432. Body portion 1420 can comprise an annular groove 1424. For example, annular groove 1424 can be located on the top surface 1420b of the body portion 1420, can have an inside diameter 1477 of at least approximately 12.16 inches, can have a width 1290 of at least approximately 0.11 inches, and an o-ring (not shown) can be installed in the groove. Top surface 1420b of body portion 1420 can be coupled to the imier surface 1410a of top ring 1410 using a rounded edge 1412.

[0124] Top ring 1410 can have an inside diameter 1476 of at least approxhnately 12.55 inches and an outside diameter 1475 of at most approximately 12.74 inches. Body portion 1420 can have an inside diameter 1477 of at least approximately 11.94 hiches and an outside diameter 1475 of at most approximately 12.74 inches. Bottom rmg 1430 can have an inside diameter 1478 of at least approximately 12.13 inches and an outside diameter 1475 of at most approximately 12.74 inches.

[0125] Top ring 1410 can have a height 1474 of approximately 0.185 inches; body portion 1420 can have a height 1473 of approximately 0.14 inches; and a bottom ring 1430 can have a height 1472 of approximately 0.047 inches.

[0126] In one embodiment, insulator 36a' comprises a single block of material. For example, insulator 36a' can have a height 1471 of approximately 0.37 inches and can be fabricated as a block of TEFLON, PTFE grade 7 or PTFE grade 8. Alternately, insulator 36a' can comprise a different insulating material.

[0127] Figs. 15A and 15B shows schematic views of a dark space shield 40' in accordance with an embodiment of the invention. Dark space sliield 40' comprises top ring 1510, and body portion 1520. Top ring 1510 comprises imier smface 1510a, top surface 1510b, and an outer smface 1510c. Body portion 1520 comprises an inner surface 1520a coupled to the inner smface 1510a of top ring 1510, a top smface 1520b coupled to the outer surface 1510c of top ring 1510, an outer smface 1520c coupled to the top smface 1520b of body 1520, and a bottom surface 1520d coupled to the outer smface 1520c and the inner smface 1520a.

[0128] Body portion 1520 can comprise shaped edge 1522, rounded edges 1524, and rounded comer edge 1526. Top surface 1520b of body portion 1520 can be coupled to the outer smface 1510c of top ring 1510 using a rounded edge 1512. Body portion 1520 can comprise a number of through-holes 1540 extending from the top surface 1520b to the bottom surface 1520d. For example, hole 1540 can have a diameter of at least 0.14 inches, and can be counter sunk. Holes 1540 can have angular displacements of approximately 45 degrees. Holes 1540 can be located on a circle 1571 having a diameter of approximately 12.50 hiches.

[0129] Top ring 1510 can have an inside diameter 1575 of approximately 11.72 inches and an outside diameter 1573 of approximately 12.11 inches. Body portion 1520 can have an inside diameter 1575 of approximately 11.72 inches and an outside diameter 1572 of at most approximately 13.00 inches. Top ring 1510 can have a height of approximately 0.55 inches, and body portion 1520 can have a height of approximately 0.245 inches.

[0130] Top ring 1510 can further comprise a step 1514 having an inside diameter 1574 of approximately 11.89 inches and a depth 1583 of approximately 0.12 inches. Dark space sliield 40' can have a height 1576 of approximately 0.74 hiches.

[0131] In one embodiment, dark space sliield 40' comprises a single block of material. For example, dark space shield 40' can be fabricated from a block of stainless steel. In addition, dark space sliield 40' can be have its surface roughened and a coating can be applied. For example, the smface can be blasted and a coating can be applied. Alternately, dark space shield 40' can comprise a different material such as aluminum.

[0132] Figs. 16A and 16B shows schematic views of another dark space sliield in accordance with an embodiment of the invention. Dark space sliield 40a" comprises top ring 1610, and body portion 1620. Top ring 1610 comprises imier surface 1610a, top surface 1610b, and an outer surface 1610c. Body portion 1620 comprises an imier surface 1620a coupled to tlie inner surface 1610a of top ring 1610, a top smface 1620b coupled to the outer smface 1610c of top ring 1610, an outer surface 1620c coupled to the top smface 1620b of body 1620, and a bottom smface 1620d coupled to the outer surface 1620c and tlie inner surface 1620a.

[0133] Body portion 1620 can comprise rounded edges 1622 and 1624. Top surface 1620b of body portion 1620 can be coupled to tlie outer smface 1610c of top ring 1610 using a rounded edge 1612. Body portion 1620 can comprise a number of through-holes 1640 extending from the top surface 1620b to the bottom surface 1620d. For example, holes 1640 can be counter sunk. ^'

[0134] Top ring 1610 can have an inside diameter of approximately 11.74 inches and an outside diameter of approximately 12.11 inches. Body portion 1620 can have an inside diameter of approximately 11.74 inches and an outside diameter of at most approximately 12.99 inches. Top ring 1610 can have a height of approximately 0.475 inches, and body portion 1620 can have a height of at least approximately 0.245 inches.

[0135] In one embodiment, dark space shield 40a' comprises a single block of material. For example, dark space sliield 40a' can be fabricated from a block of stainless steel. In addition, dark space sliield 40a' can be have its smface roughened and a coating can be applied. For example, the surface can be blasted and a coating can be applied. Alternately, dark space sliield 40a' can comprise a different material. [0136] From the above, a number of combinations of parts are seen to be possible. However, only those combinations actually required by users need be provided. Note tiiat there are five bodies 32, three for ten inch targets (one for each of three target-to-substrate spacings) and two for twelve inch targets (one for each of two spacings). Note further that fom insulator rings 36 are provided, two for ten inch targets and two for twelve inch targets, one for each of the RM and SPA types. Ten adapter shields 41 are provided, two for each of two materials for each of the five bodies. For twelve inch targets, different adapter sliields are illustrated for two different target types, resulting in a total of twelve different adapter sliields 41. Two sizes of dark space shields 40 are provided for each target size, one each for standard and one for high pressure. These are multiplied by the nmnber of different materials desired, so that six dark space sliields are provided for ten inch targets (where tliree materials are provided) and four for twelve inch targets (where two materials are provided).

[0137J Those skilled in the art will appreciate that tlie application of tlie present invention herein is varied, that the invention is described in exemplary embodiments, and that additions and modifications can be made without departing from the principles of the invention.

Claims

Therefore, the following is claimed:

1. A method of providing adapter assemblies capable of mounting a sputtering cathode hi mounting structure of a given geometty in a sputter coating apparatus and capable of supporting, in the mounting structure of the given geometty, a plurality of different cathode configurations of either a plurality of different target diameters, a plurality of different catliode types, or at a plurality of different target-to- substrate spacings, the method comprising: providing an annular adapter body having an outside smface configured to mount in the mounting structure of the given geometty, having an inside surface configured to support a catliode of one of said diameters, and having thickness geometry configured to support a cathode at one of said target-to-substrate spacings; providing an annular electrical-insulator ring configured to support a catliode of one of tlie diameters and types; providing a replaceable amiular adapter sliield attachable to the outside surface of the body and configured to cover portions of the outer surface of the body to protect said portions of the body from deposits during sputtering, the adapter sliield being removable from the body to remove from the assembly deposits that have accumulated thereon during sputtering; and providing a replaceable amiular dark-space shield attachable to a side of the body that is configured to face the substrate, the dark-space shield being configured and dimensioned to cover a portion of the body facing the substrate and a portion of the body facing radially-inwardly toward the target to protect said portions of the body from deposits during sputtering, the dark-space shield being removable from the body to remove, from the assembly, deposits that have accumulated thereon during sputtering, the dark-space shield having an inside surface configured to form a gap, between the target and the dark space shield and the target and the insulator, that is wide enough to prevent a spark between the target and the dark-space sliield and narrow enough to prevent die formation of plasma between the target and the dark-space sliield or the insulator, the gap having a depth that is sufficiently large relative to the width thereof to avoid substantial deposition of sputtering material on the insulator to facilitate use of the target substantially for the life of tlie target without interruption necessitated by a need to subject the adaptor assembly or parts thereof to removal for replacement or cleaning.

2. The method of the claim 1 wherein: the providing of tlie adapter body includes providing a plurality of adapter bodies, each having the outside surface tiiereof configured to mount in the mounthig structure of the given geometry, each body having the inside surface thereof configured to support a cathode of a different one of said diameters.

3. The method of claim 1 wherein: the providing of the adapter body includes providing a plurality of adapter bodies, each having tlie outside surface thereof configured to mount in the mounting structure of the given geometry and each having a different thickness geometry configured to support a catliode at a different one of said target-to- substrate spacings.

4. The method of claim 1 wherein: the providing of the adapter body includes providing a plurality of adapter bodies, each having the outside surface thereof configured to mount in the mounting structure of the given geometty and each having the inside smface thereof configured to support a catliode of a different one of said diameters and a thickness geometry configured to support a cathode at a different one of said target-to-substrate spacings.

5. The method of claim 1 wherein: the providing of the electrical-insulator rmg includes providing a ring configured to support the cathode of one of tlie diameters and types in an adapter body configured for any of the plmality of the spacings.

6. The method of claim 1 wherein: the providing of the electrical-insulator ring includes providing a plurality of rings, each configured to support a cathode assembly of a different one of the types.

7. The method of claim 1 wherein: the providing of the electrical-insulator ring includes providing a plmality of rings, each configured to support a cathode assembly of a different one of the diameters.

8. The method of claim 1 wherein: the providing of a replaceable adapter sliield includes provid ig a plurality of adapter shields, one for each of a plmality of different target-to-substrate spacing geometries of the body.

9. The method of claim 1 wherein: the providing of a replaceable adapter shield includes providing a plmality of adapter sliields, one for each of a plmality of different target diameter configuration capabilities of the body.

10. The method of claim 1 wherein: the providing of the dark-space sliield includes providing tlie dark-space configured to provide said gap around the catliode of one of the types and diameters to protect an adapter body of any of the plurality of spacings.

11. The method of claim 1 wherein: the providing of the dark-space shield includes providhig a plmality of dark space sliields, each configured to provide said gap around a cathode assembly of a different one of the types.

12. The method of claim 1 wherein: the providing of the dark-space sliield includes providing a plmality of dark space shields, each configured to provide said gap around a cathode assembly of a different one of the diameters.

13. The method of claim 1 wherein: the providing of die dark-space sliield includes providing a plmality of dark space sliields, each configured to provide said gap aromid a cathode assembly of one of the diameters and types at a different process pressure.

14. The method of claim 1 wherein: the providing of the dark-space shield includes providing a plmality of dark space shields, each configured to provide said gap around a cathode assembly for different materials.

15. The method of the claim 1 wherein: the providing of the adapter body includes providing a plurality of adapter bodies, each having the outside surface configured to mount in the mounting structure of the given geometry, each having the inside surface configured to support a catliode of a different combination of said diameters and each having a tiiickness geometry configured to support a cathode at a different one of, said target-to-substrate spacings; the providhig of the ring includes providing a plurality of rings, each ring configured to support the catliode of a different combination of the diameters and types in an adapter body at any of a plurality of the spacings; the providing of a replaceable adapter shield includes providing a plmality of adapter shields, one for each of a plurality of different combination of target-to-substrate spacing geometries of the body and target diameter configuration capabilities of the body; and the providing of the dark-space sliield includes providing a plurality of dark space shields, each configured to provide said gap aromid a catliode of a different one of the diameters and types for a given processing pressure, and to so protect an adapter body of any of the plmality of target-to-substrate spacing geometries.

16. The method of claim 1 wherein: the providing of tire electrical-insulator ring includes providing a plurality of rings, each configured to support the cathode of a different combination of the diameters and types hi an adapter body at any of tlie plmality of spacings.

17. The method of claim 1 wherein: the providing of a replaceable adapter sliield includes providing a plmality of adapter sliields, one for each of a plmality of different combination of target-to-substrate spacing geometries of the body and target diameter configuration capabilities of the body.

18. The method of claim 1 wherein: tlie providhig of the dark-space sliield includes providing a plmality of dark space shields, each configured to provide said gap aromid a cathode of a different one of the diameters and types and any of the plmality of spacings.

19. The method of claim 1 wherein: the providing of the dark-space shield includes providing a dark space sliield configured to provide said gap of from 0.062 +/- 0.005 inches for standard pressure and 0.050 +/- 0.005 hiches for high pressme.

20. The method of claim 1 wherein: the providing of the dark-space sliield includes providing a dark-space sliield configured to provide a gap of at least 0.045 inches.

21. An adapter assembly capable of mounting a sputtering catiiode in a mounting structure of a given geometry in a sputter coating apparatus and capable of providing a plmality of different cathode configurations of either a plurality of different cathodes, a plurality of different target diameters, a plmality of different cathode or target types of a given diameter, or a plurality of different target-to-substrate spacings for a given target type of a given diameter, the assembly comprising: an annular adapter body having an outside surface configured to mount in tlie mounting structure of the given geometry, having an inside surface configured to support a cathode of one of said diameters, and having thickness geometty configured to support a catliode at one of said target-to-substrate spacings; an annular electrical-insulator ring configured to support a cathode of one of the diameters and types; a replaceable amiular adapter shield attachable to the outside of the body and configured to cover portions of the outer surface of the body to protect said portions of the body from deposits during sputtering, the shield being removable from the body to remove from the assembly deposits that have accumulated thereon during sputtering; and a replaceable amiular dark-space shield attachable to a side of the body that is configured to face tlie substrate, tlie dark-space sliield being configured and dimensioned to cover a portion of the body facing the substrate and a portion thereof facing radially-inwardly toward the target to protect said portions of the body from deposits during sputterhig, the dark-space sliield behig removable from the body to remove, from the assembly, deposits that have accumulated thereon during sputtering, tlie dark-space sliield having an inside smface configured to foπn a gap between the target on the one hand and the shield and insulator on the other hand that is wide enough to prevent a spark between the target and the dark-space shield and narrow enough to prevent the formation of plasma between the target and the dark-space shield or the insulator, the gap having a depth that is sufficiently large relative to the width thereof to avoid substantial deposition of sputtering material on the insulator, so as to facilitate use of the target substantially for the life of the target without interruption necessitated by a need to subject the adaptor assembly or parts thereof to removal for replacement or cleaning.

22. The assembly of the claim 21 further comprising: a plurality of adapter bodies, each having the outside smface configured to mount in a fixed size openmg, each body having tlie mside surface configured to support a cathode of a different one of said diameters.

23. The assembly of the claim 21 further comprising: a plurality of adapter bodies, each having the outside surface configured to mount in a fixed size opening, each body having a different thickness geometry configured to support a cathode at a different one of said target-to-substrate spacings.

24. The assembly of the claim 21 further comprising: a plurality of adapter bodies, each having the outside smface configured to mount in tl e mounting structure of the given geometry, each body having the inside surface configured to support a cathode of a different one of said diameters, each body having thickness geometty configured to support a cathode at one of said target-to-substrate spacings.

25. The assembly of the claim 21 wherein: the ring is configured to support the cathode of one of the diameters and types in an adapter body at any of a plurality of the spacings.

26. The assembly of the claim 21 further comprising: a plurality of rings, each configured to support a cathode assembly of a different one of the types or a different one of the diameters.

27. The assembly of the clahn 21 further comprising: a plmality of adapter shields, one for each of a plmality of different target-to-substrate spacing geometries of the body.

28. The assembly of the claim 21 further comprising: a plurality of replaceable adapter shields, one for each of a plmality of different target diameter configuration capabilities of tlie body.

29. The assembly of the claim 21 wherein: the dark-space configured to provide said gap around the catiiode of one of tlie diameters and types and to so protect an adapter body of any of a plurality of the spacings.

30. The assembly of the claim 21 further comprising: a plurality of dark space shields, each configured to provide said gap around a cathode assembly of a different one of tlie types or diameters.

31. The assembly of tlie claim 21 further comprising: a plurality of adapter bodies, each having the outside smface configured to momit in a fixed size opening, each body having the inside smface configured to support a cathode of a different combination of said diameters and thickness geometties configured to support a cathode at a different one of said target-to- substrate spacings; a plurality of rings, each configured to support a cathode assembly of a different one of the types, each ring configured to support the cathode of a different combination of the diameters and types in an adapter body at any of a plurality of the spacings; a plurality of adapter shields, one for each of a plmality of different combination of target-to- substrate spacing geometties of the body and target diameter configuration capabilities of the body; and a plmality of dark space sliields, each configured to provide said gap aromid a cathode of a different one of the diameters and types and to so protect an adapter body of any of a plurality of the spacings.

32. The assembly of the claim 21 further comprising: a plurality of rings, each configured to support a cathode assembly of a different one of the types, each ring configured to support the cathode of a different combination of the diameters and types in an adapter body at any of a plurality of the spachigs.

33. The assembly of the claim 21 further comprising: the providing of a replaceable adapter shield includes providing a plmality of adapter shields, one for each of a plurality of different combination of target-to-substrate spacing geometties of the body and target diameter configuration capabilities of the body.

34. The assembly of the claim 21 further comprising: the providing of the dark-space shield includes providing a plurality of dark space sliields, each configured to provide said gap around a cathode of a different one of the diameters and types and to so protect an adapter body of any of a plurality of the spachigs.

35. A method of protecting an insulator ring that supports a sputtering target in an adapter body in a sputter coating apparatus, the method comprising: installing a dark-space shield of a given geometty or replacing an existing dark-space sliield of the same or a different geometry, around a target in a sputter coating apparatus, wherein the dark-space shield has a generally cylindrical inwardly facing surface and the target has a generally cylmdrical outwardly facing edge smface; and securing the dark-space shield aromid the target with the inwardly facing smface thereof parallel to and concentric with tlie outwardly fachig edge surface of the target and spaced at least 0.045 inches therefrom and at most 0.067 inches therefrom.

36. The method of the claim 35 wherein: the dark-space sliield is secured around the target with the inwardly facing surface thereof spaced 0.050 +/- 0.005 inches therefrom.

37. The method of tlie clahn 35 wherein: the dark-space shield is secured around the target with the inwardly facing smface thereof spaced

0.062 +/- 0.005 inches therefrom.

38. The method of the claim 35 wherein: the inwardly facing smface of the dark-space shield has an inside diameter of 11.749 +/- 0.005 inches.

39. The method of the claim 35 wherein: the inwardly facing smface of the dark-space shield has an inside diameter of 11.725 +/- 0.005 inches.

40. The method of the claim 35 wherein: the inwardly facing surface of tlie dark-space shield has an mside diameter of 10.124 +/- 0.005 inches.

41. The method of the claim 35 wherein: the inwardly facing smface of the dark-space shield has an inside diameter of 10.100 +/- 0.005 inches.

42. A method of providing an adapter assembly capable of mounting a cathode assembly including a target in a sputter coating apparattis and forming a plasma chamber therein, the method comprising: providing an annular adapter body having a cylindrical cavity therein, an outer flange configured to couple to the sputter coating apparatus, and an imier shoulder configured to couple to the cathode assembly; providhig a replaceable annular insulator ring, the amiular insulator ring physically coupling the catliode assembly to the imier shoulder and electrically insulating the catliode assembly from tlie inner shoulder; and providing a replaceable annular dark space shield configured to be coupled to a lower surface of the h er shoulder, the dark space sliield behig dimensioned and configm-ed to cover the lower smface of the inner shoulder, an inner radial surface of the inner shoulder, and an inner radial surface of the insulator ring, wherein the dark space sliield and the target are separated by a gap of at least 0.045 hiches.

43. The method of claim 42 comprising: providing a replaceable annular adapter sliield configured to be coupled to a mathig smface of the adapter body, the adapter sliield being dimensioned and configured to cover a portion of the dark space sliield, an outer radial smface of the adapter body, and the mating smface of the adapter body, wherein a gap is provided between tlie dark space sliield and the cathode assembly.

44. In a method of mounting a cathode assembly to the sputter coating apparattis having a sputtering chamber, the cathode assembly having a plurality of different cathode configurations of either a plmality of different target diameters, a plurality of different cathode types, or at a plurality of different target-to-substrate spacings, the improvement comprising: providing an amiular adapter body having an outside smface configured to mount in the mounting structure of the sputter coating apparatus, having an inside surface configured to support the catiiode assembly having the plurality of different cathode configurations; providing an annular electrical-insulator ring configured to support at least one of the cathodes of one of the diameters and types; providing a replaceable amiular adapter shield attachable to the outside surface of the body and configured to cover portions of the outer surface of the body to protect said portions of the body from deposits during sputtering, the adapter sliield being removable from the body to remove from the assembly deposits that have accumulated thereon during sputtering; and providhig a replaceable annular dark-space shield attachable to a side of the body that is configured to face the sputtering chamber, the dark-space sliield being configured and dimensioned to cover a portion of the body facing the sputterhig chamber and a portion of the body facing radially-inwardly toward the target to protect tlie portions of the body from deposits during sputtering, the dark-space shield being removable from the body to remove, from tlie assembly, deposits that have accumulated thereon during sputtering, the dark-space shield having an mside surface configured to form a gap, between the target and the dark space shield and the target and the hisulator, that is wide enough to prevent a spark between the target and the dark-space sliield and narrow enough to prevent tlie formation of plasma between tlie target and the dark-space shield or the hisulator, the gap having a depth that is sufficiently large relative to the width thereof to avoid substantial deposition of sputterhig material on the insulator to facilitate use of the target substantially for tlie life of the target without interruption necessitated by a need to subject the adaptor assembly or parts thereof to removal for replacement or cleaning.

45. The method of claim 44 further comprising: providing a replaceable amiular adapter shield configured to be coupled to a mating surface of the adapter body, the adapter shield being dimensioned and configured to cover a portion of the dark space- shield, an outer radial smface of the adapter body, and the mating surface of the adapter body, wherein a gap is provided between tlie dark space sliield and the catiiode assembly.

46. In sputter coating apparatus, the improvement comprising: an adapter assembly for mounting the cathode assembly to the sputter coating apparatus having a sputtering chamber, the cathode assembly having a plurality of different cathode configurations of either a plmality of different target diameters, a plurality of different cathode types, or at a plmality of different target-to-substrate spacings, wherein the adapter assembly comprises: an annular adapter body having an outside smface configured to momit in the mounting structure of tlie sputter coating apparatus, having an inside surface configured to support the cathode assembly having the plurality of different catiiode configurations; an amiular electrical-insulator ring coupled to the adapter body and configured to support at least one of the cathodes of one of the diameters and types; a replaceable annular adapter shield coupled to the outside surface of the adapter body and configured to cover portions of the outer surface of the body to protect the portions of the body from deposits during sputtering, the adapter shield being removable from the body to remove from the assembly deposits that have accumulated thereon during sputtering; and a replaceable amiular dark-space shield coupled to a side of the body that is configured to face the sputtering chamber, the dark-space shield being configured and dimensioned to cover a portion of the body facing the sputtering chamber and a portion of the body facing radially- inwardly toward the target to protect the portions of the body from deposits during sputtering, the dark-space shield being removable from the body to remove, from the assembly, deposits that have accumulated thereon during sputtering, the dark-space shield having an inside smface configured to form a gap, between the target and the dark space shield and the target and the insulator, that is wide enough to prevent a spark between the target and the dark-space shield and narrow enough to prevent tlie formation of plasma between the target and the dark-space shield or the insulator, the gap having a depth that is sufficiently large relative to the width thereof to avoid substantial deposition of sputtering material on the insulator to facilitate use of the target substantially for tlie life of the target without interruption necessitated by a need to subject the adaptor assembly or parts thereof to removal for replacement or cleaning.

47. An adapter body comprising: a cylindrical element comprising an outer flange, a ring portion, and inner shoulder, wherein the outer flange has an inner surface, a top surface coupled to the hmer smface, an outside smface coupled to the top surface, and a bottom surface coupled to tlie outside smface, wherein the ring portion has an inner surface coupled to the top surface of the hmer shoulder and an outer surface coupled to the bottom surface of tlie outer flange, and wherein the inner shoulder has an outer smface coupled to the outer surface of the ring portion, a bottom surface coupled to the inner surface and the outer smface, an inner smface coupled to the bottom smface, and a top surface coupled to the inside surface and to the hmer smface of the ring portion.

48. The adapter body of claim 47 wherein the cylindrical element is fabricated from a single block of material.

49. The adapter body of claim 47 wherein the top smface of the outer flange comprises an annular groove.

50. The adapter body of claim 49 wherein tlie annular groove comprises at least one curved surface.

51. The adapter body of claim 47 wherein the outside surface comprises at least one flat smface and at least one curved surface.

52. The adapter body of clahn 47 wherein outer flange comprises a plurality of through-holes.

53. The adapter body of claim 47 wherein the bottom surface of the outer flange comprises an annular groove.

54. The adapter body of claim 53 wherein the amiular groove is a groove for an o-ring.

55. The adapter body of claim 47 wherein tlie top surface of the hmer shoulder comprises an amiular groove.

56. The adapter body of claim 55 wherein the annular groove is a groove for an o-ring.

57. The adapter body of claim 47 wherein the bottom surface of the imier shoulder comprises a plurality of holes in a radial pattern.

58. The adapter body of claim 47 wherein the outer flange comprises an outside diameter of at least approximately 14.50 inches.

59. The adapter body of claim 47 wherein the cylindrical element comprises a height extending from the bottom smface of the outer flange to the top surface of tlie inner shoulder, the height being approxhnately equal to a height selected from the group consisting essentially of 0.68, 1.18 and 1.48 inches.

60. An hisulator comprising: an amiular ring element having a body portion, a top ring portion, and a bottom ring portion; the body portion having an hmer smface, a top smface coupled to the inner surface, a bottom smface coupled to tlie hmer surface, and an outside smface; the top ring portion having an imier smface coupled to the top smface of the body portion, an outer surface coupled to the outer surface of the body portion, and a top smface coupled to the inner smface and the outer surface of the top ring; and the bottom ring portion having an outer surface coupled to the outer surface of tlie body portion, a bottom smface coupled to the outer surface, and an inside smface coupled to the bottom smface of the body portion.

61. The hisulator of clahn 60 wherein the amiular ring element comprises TEFLON material produced hi accordance with ASTM D3294-97.

62. The hisulator of claim 61 wherein the material comprises TEFLON PTFE.

63. The insulator of claim 62 wherein the material comprises at least one of TEFLON PTFE grade

7A and TEFLON PTFE grade 8 from the Dupont Corp.

64. The insulator of claim 60 wherein the bottom smface of the body portion comprises an annular groove.

65. The insulator of claim 64 wherein the amiular groove is a groove for an o-ring.

66. The insulator of claim 60 wherein the top ring portion comprises an outside diameter of approxhnately 11.12 inches.

67. The insulator of clahn 60 wherein the top ring portion comprises an inside diameter of approximately 10.92 inches.

68. The hisulator of claim 60 wherein: the top ring portion has an inside diameter of at least approximately 10.932 inches and an outside diameter of at most approximately 11.12 inches and a height 774 of approxhnately 0.29 inches; the body portion has an inside diameter of at least approximately 10.32 inches and an outside diameter of at most approximately 11.12 inches and a height 773 of approximately 0.16 inches; and the bottom ring has an inside diameter of at least approximately 10.46 hiches and an outside diameter of at most approximately 11.12 inches.

69. The insulator of claim 60 wherein: the top ring portion has an inside diameter of at least approximately 10.932 inches and an outside diameter of at most approximately 11.12 inches and a height 774 of approximately 0.35 inches; the body portion has an inside diameter of at least approximately 10.32 inches and an outside diameter of at most approximately 11.12 inches and a height 773 of approximately 0.17 mches ; and the bottom ring has an side diameter of at least approximately 10.46 inches and an outside diameter of at most approximately 11.12 hiches.

70. The insulator of claim 60 wherein: the top ring portion has an inside diameter of at least approximately 12.55 inches and an outside diameter of at most approximately 12.74 inches and a height of approximately 0.25 inches; the body portion has an inside diameter of at least approximately 11.94 inches and an outside diameter of at most approximately 12.74 hiches and a height of approximately 0.125 inches; and the bottom ring has an inside diameter of at least approximately 11.94 hiches and an outside diameter 1378 of at most approximately 12.11 inches.

71. The insulator of claim 60 wherein: the top ring portion has an inside diameter of at least approximately 12.55 inches and an outside diameter of at most approximately 12.74 inches and a height of approximately 0.185 inches; the body portion has an mside diameter of at least approximately 11.94 inches and an outside diameter of at most approximately 12.74 inches and a height of approximately 0.14 inches; and the bottom ring has an inside diameter of at least approximately 11.94 inches and an outside diameter 1378 of at most approxhnately 12.11 inches.

72. A dark space sliield comprising: a cylindrical element having a body portion and a top ring portion; the body portion having an outer surface, a bottom surface coupled to tlie outer surface by a first shaped surface, an hmer surface coupled to the bottom surface, and a top surface coupled to the outer surface; and the top ring portion having an outer surface coupled to the top smface of the body portion, a top smface coupled to the outer surface, an imier surface coupled to the top surface and to the mer surface of the body portion.

73. The dark space shield of claim 72 wherein tlie cylindrical element is fabricated from a single block of material.

74. The dark space shield of claim 72 wherein the body portion comprises a plurality of through- holes.

75. The dark space shield of claim 72 wherein the top ring portion comprises an outside diameter, wherein tlie outside diameter comprises at least 10.4 inches.

76. The dark space shield of claim 72 wherein the top ring portion comprises an inside diameter of at least approximately 10.1 inches.

77. The dark space shield of claim 72 wherein the top ring portion has an inside diameter of 11.749 +/- 0.005 inches.

78. The dark space shield of claim 72 wherein the top ring portion has an inside diameter of 11.725 +/- 0.005 inches.

79. The dark space shield of claim 72 wherein the top ring portion has an inside diameter of

10.124 +/- 0.005 inches.

80. The dark space shield of claim 72 wherein the top ring portion has an inside diameter of 10.100 +/- 0.005 inches.

81. The dark space shield of claim 72 wherein: tlie top ring has an inside diameter of approximately 10.10 hiches and an outside diameter of approximately 10.405 inches and a height of approximately 0.505 inches; and the body portion has an mside diameter of approximately 10.10 inches and an outside diameter of at most approximately 12.08 inches and a height of approximately 0.244 inches.

82. The dark space sliield of clahn 72 wherein: the top ring has an inside diameter of approxhnately 10.10 inches and an outside diameter of approximately 10.405 inches and a height of approximately 0.505 inches; and the body portion has an inside diameter of approximately 10.10 inches and an outside diameter of at most approximately 12.08 inches and a height of approximately 0.244 inches, the body portion having holes therein, angularly spaced at approximately 45 degrees, located on a circle having a diameter of approximately 11.50 inches.

83. The dark space shield of claim 72 wherein: the top ring has an inside diameter of approximately 10.12 inches and an outside diameter of approximately 10.405 hiches and a height of approximately 0.305 inches; and the body portion has an inside diameter of approximately 10.12 hiches and an outside diameter of at most approximately 12.08 inches and a height of approximately 0.244 inches.

84. The dark space shield of claim 72 wherein: the top ring has an inside diameter of approximately 10.12 inches and an outside diameter of approximately 10.405 inches and a height of approximately 0.305 inches; the body portion has an inside diameter of approximately 10.12 inches and an outside diameter of at most approximately 12.08 hiches and a height of approximately 0.244 inches, tlie body portion having holes therein, angularly spaced at approxhnately 45 degrees, located on a circle having a diameter of approximately 11.50 inches.

85. The dark space shield of claim 72 wherein: tlie top ring has an inside diameter of approximately 11.72 inches and an outside diameter of approxhnately 12.11 inches and a height of approximately 0.55 inches; and the body portion has an inside diameter of approximately 11.72 inches and an outside diameter of at most approximately 13.00 hiches and a height of approximately 0.245 inches.

86. The dark space sliield of claim 72 wherein: the top ring has an inside diameter of approximately 11.72 inches and an outside diameter of approximately 12.11 inches and a height of approximately 0.55 hiches; and the body portion has an inside diameter of approximately 11.72 inches and an outside diameter of at most approximately 13.00 inches and a height of approximately 0.245 hiches, the body portion having holes therein, angularly spaced at approximately 45 degrees, located on a circle having a diameter of approximately 12.50 inches.

87. The dark space shield of claim 72 wherein: the top ring has an mside diameter of approximately 11.74 inches and an outside diameter of approximately 12.11 inches and a height of approximately 0.475 inches; and the body portion has an inside diameter of approximately 11.74 inches and an outside diameter of at most approximately 12.99 inches and a height of approximately 0.245 inches.

88. An adapter shield comprising: a body portion having rounded edges and rounded comers; a top ring having a plurality of fom through-holes at 90 degree intervals on a circle of diameter of approximately 12.563 inches, an outside diameter of approximately 12.98 inches and an inside diameter of at least approximately 12.2 inches; a bottom ring having an outside diameter of approximately 12.14 inches and an inside diameter of at least approximately 10.85 inches; and the body portion extending from the outside diameter of the bottom ring to the inside diameter of the top ring and having an axial height selected from the group consisting of approximately 0.53 inches, approximately 1.03 inches, and approximately 1.33 inches.