WO2003077038A2 - Reduced striae extreme ultraviolegt lithographic elements, a method of manufacturing the same and a method of measuring striae - Google Patents

Reduced striae extreme ultraviolegt lithographic elements, a method of manufacturing the same and a method of measuring striae Download PDF

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Publication number
WO2003077038A2
WO2003077038A2 PCT/US2003/006825 US0306825W WO03077038A2 WO 2003077038 A2 WO2003077038 A2 WO 2003077038A2 US 0306825 W US0306825 W US 0306825W WO 03077038 A2 WO03077038 A2 WO 03077038A2
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WO
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Prior art keywords
striae
titania
glass
extreme ultraviolet
titanium
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PCT/US2003/006825
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French (fr)
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WO2003077038A3 (en
Inventor
Kenneth E Hrdina
John E Maxon
Brent R Mclean
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Corning Incorporated
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Application filed by Corning Incorporated filed Critical Corning Incorporated
Priority to KR1020047013806A priority Critical patent/KR101190914B1/en
Priority to DE60332429T priority patent/DE60332429D1/en
Priority to JP2003575191A priority patent/JP2005519349A/en
Priority to EP03744207A priority patent/EP1481288B1/en
Priority to AU2003220982A priority patent/AU2003220982A1/en
Publication of WO2003077038A2 publication Critical patent/WO2003077038A2/en
Publication of WO2003077038A3 publication Critical patent/WO2003077038A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1446—Means for after-treatment or catching of worked reactant gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1484—Means for supporting, rotating or translating the article being formed
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/0085—Compositions for glass with special properties for UV-transmitting glass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/60—Relationship between burner and deposit, e.g. position
    • C03B2207/62—Distance
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2207/00—Glass deposition burners
    • C03B2207/60—Relationship between burner and deposit, e.g. position
    • C03B2207/66—Relative motion
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/40—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03C2201/42—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn containing titanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/40—Gas-phase processes

Definitions

  • This invention relates to extreme ultraviolet elements made from glasses including silica and titania. More particularly, the invention relates to extreme ultraviolet elements having reduced striae and methods and apparatus for making such elements and measuring striae.
  • Ultra low expansion glasses and soft x-ray or extreme ultraviolet (EUV) lithographic elements made from silica and titania traditionally have been made by flame hydrolysis of organometallic precursors of silica and titania.
  • Ultra-low expansion silica-titania articles of glass made by the flame hydrolysis method are used in the manufacture of elements used in mirrors for telescopes used in space exploration and extreme ultraviolet or soft x-ray-based lithography. These lithography elements are used with extreme ultraviolet or soft x-ray radiation to illuminate, project and reduce pattern images that are utilized to form integrated circuit patterns.
  • extreme ultraviolet or soft x-ray radiation is beneficial in that smaller integrated circuit features can be achieved, however, the manipulation and direction of radiation in this wavelength range is difficult. Accordingly, wavelengths in the extreme ultraviolet or soft x-ray range, such as in the 1 nm to 70 nm range, have not been widely used in commercial applications.
  • One of the limitations in this area has been the inability to economically manufacture mirror elements that can withstand exposure to such radiation while maintaining a stable and high quality circuit pattern image.
  • ultra low expansion titania-silica glass made in accordance with the method described above is that the glass contains striae.
  • Striae are compositional inhomogeneities which adversely affect optical transmission in lens and window elements made from the glass. Striae can be measured by a microprobe that measures compositional variations that correlate to coefficient of thermal expansion (CTE) variations of a few ppb/°C. In some cases, striae have been found to impact surface finish at an angstrom root mean rms level in reflective optic elements made from the glass. Extreme ultraviolet lithographic elements require finishes having a very low rms level.
  • CTE coefficient of thermal expansion
  • the invention relates to ultra low expansion glass extreme ultraviolet optical or lithographic elements and methods for their manufacture. Methods and apparatus are provided for producing ultra low expansion glass bodies and extreme ultraviolet optical or lithographic elements having decreased striae.
  • extreme ultraviolet abbreviated as EUV
  • soft x-ray will be used interchangeably to refer to short wavelengths of electromagnetic radiation between 1 nm and 70 nm.
  • lithographic systems that utilize EUV radiation operate between 5 and 15 nm, and typically around 13 nm.
  • an extreme ultraviolet lithographic element includes a titania-containing silica glass having a polished and shaped surface and having a rms striae level less than about 0.05 mega Pascals.
  • the element has a peak to valley striae level less than about 0.2 mega Pascals.
  • the glass contains between about 5 and 10 weight percent titania and has a coefficient of thermal expansion in the range of about + 30 ppb/° C to -30 ppb/° C between about 20° C and 35° C.
  • the glass contains between about 6 weight % titania and 8 weight % titania and has a homogeneous CTE in the range of about + 20 ppb/° C to -20 ppb/° C between about 20° C and 35° C.
  • Still another embodiment of the invention relates to a method of manufacturing an extreme ultraviolet lithography element. The method includes the steps of providing a silicon-containing feedstock and a titanium-containing feedstock, delivering the feedstocks to a conversion site, and converting the feedstocks into titania-containing silica soot.
  • the method further includes consolidating the titania- containing silica soot into a low inclusion, homogeneous titania-containing silica glass preform and finishing the titanium-containing glass preform into an extreme ultraviolet lithographic element having an rms striae level less than about 0.05 mega Pascals.
  • the conversion site includes a furnace having exhaust vents and the method includes maintaining said striae level by controlling exhaust vent flow during the manufacturing process.
  • the method includes providing the furnace with more than six exhaust vents.
  • the striae level is controlled by adjusting the distance between the preform and the burner.
  • the soot is deposited into a cup mounted on an oscillating table and the striae level is reduced by altering the oscillation pattern of the table, and in particular by increasing the rotation rate of the table. For example, in some embodiments, the rotation rate of the boule is greater than about 6 rpm.
  • Another embodiment of the invention relates to a method of measuring striae in an extreme ultraviolet lithographic element which includes utilizing a polariscope to measure the optical retardance in the element as a function of position and converting the optical retardance to stress values.
  • the retardance values are converted to a stress level value by knowing the path length, i.e. the thickness, over which optical retardance is measured and the stress optical coefficient of the material.
  • the polariscope has a sensitivity of at least 0.05 nm, and in other embodiments, the polariscope utilizes a light source having a beam size less than the spacing of the striae in the extreme ultraviolet lithographic element.
  • extreme ultraviolet elements having reduced striae and methods and apparatus are provided for the manufacture of these elements and measurement of striae in these elements. Methods and apparatus are also provided for measuring low levels of striae in glasses and extreme ultraviolet elements.
  • FIG. 1 is a schematic drawing of an apparatus for manufacturing ultra low expansion glass according to one embodiment of the invention.
  • FIG. 2 is a schematic drawing of an apparatus for manufacturing ultra low expansion glass according to one embodiment of the invention.
  • FIG. 3 is a graph comparing striae measurement techniques utilizing a polariscope and utilizing a microprobe.
  • the invention provides glass bodies and extreme ultraviolet elements having low thermal expansion and homogeneous titanium concentrations and methods and apparatus for their manufacture.
  • the methods and apparatus are particularly beneficial for the manufacture of extreme ultraviolet optical elements such as lithography substrates for both lithography masks and lithography mirror optics.
  • the methods and apparatus substantially reduce striae problems encountered during the formation of boules, particularly when the glass is ground and polished into a curved mirror reflective surface that cuts across the planar striae levels.
  • the invention further pertains to making thermally stable EUV lithography structure objects such as optical mirror lithography element substrate structures and reflective lithography mask element substrate structures.
  • PCT patent publication WO 01/08163 entitled EUV SOFT X-RAY PROJECTION LITHOGRAPHIC METHOD SYSTEM AND LITHOGRAPHY ELEMENTS commonly assigned to CORNING INCORPORATED and naming Davis et al. as inventors and WO 01/07967, entitled EUV SOFT X-RAY PROJECTION LITHOGRAPHIC METHOD AND MASK DEVICES commonly assigned to CORNING INCORPORATED and naming Davis et al. as inventors, the contents of which are hereby incorporated by reference discloses EUV lithography mirror element and mask structures.
  • silica-titania powders are manufactured as shown in Fig. 1 through flame hydrolysis of silica- containing and titanium-containing feedstocks.
  • a conventional apparatus for the manufacture of titania-containing silica glasses includes high purity silicon-containing feedstock or precursor 14 and high purity titanium-containing feedstock or precursor 26.
  • the feedstock or precursor materials are typically siloxanes, alkoxides and tetrachlorides containing titanium or silicon.
  • silicon-containing feedstock material is octamethylcyclotetrasiloxane
  • titanium-containing feedstock material is titanium isopropoxide.
  • An inert bubbler gas 20 such as nitrogen is bubbled through feedstocks 14 and 26, to produce mixtures containing the feedstock vapors and carrier gas.
  • An inert carrier gas 22 such as nitrogen is combined with the silicon feedstock vapor and bubbler gas mixture and with the titanium feedstock vapor and bubbler gas mixture to prevent saturation and to deliver the feedstock materials 14, 26 to a conversion site 10 within furnace 16 through distribution systems 24 and manifold 28.
  • the silicon feedstock and vapor and titanium feedstock and vapor are mixed in a manifold 28 to form a vaporous, titanium-containing silica glass precursor mixture which is delivered through conduits 34 to burners 36 mounted in the upper portion 38 of the furnace 16.
  • the burners 36 produce burner flames 37.
  • Conversion site burner flames 37 are formed with a fuel and oxygen mixture such as methane mixed with hydrogen and/or oxygen, which combusts, oxidizes and converts the feedstocks at temperatures greater than about 1600° C into soot 11.
  • the burner flames 37 also provide heat to consolidate the soot 11 into glass.
  • the temperature of the conduits 34 and the feedstocks contained in the conduits are typically controlled and monitored in minimize the possibility of reactions prior to the flames 37.
  • the feedstocks are delivered to a conversion site 10, where they are converted into titania-containing silica soot particles 11.
  • the soot 11 is deposited in a revolving collection cup 12 located in a refractory furnace 16 typically made from zircon and onto the upper glass surface of a hot titania-silica glass body 18 inside the furnace 16.
  • the soot particles 11 consolidate into a titania-containing high purity silica glass body.
  • the cup 12 typically has a circular diameter shape of between about
  • the weight percent of titania in the fused silica glass can be adjusted by changing the amount of either the titanium feedstock or silicon-containing feedstock delivered to the conversion site 10 that is incorporated into the soot 11 and the glass 18.
  • the amount of titania and/or silica is adjusted so that the glass body has a coefficient of thermal expansion of about zero at the operating temperature of an EUV or soft x-ray reflective lithography or mirror element.
  • the furnace 16 further includes crown 40 which carries a plurality of burners 37 which produce silica soot. Further details on the structure and operation of furnaces of this type may be found in commonly assigned United States patent number 5,951 ,730, the entire contents of which are incorporated herein by reference. Particular details on burner configurations for making fused silica boules may be found in commonly- assigned PCT patent publication number WO 00/17115.
  • the furnace 16 also includes a plurality of exhaust ports or vents 42, evenly spaced around the circumference of the furnace. Typically, a furnace 16 includes 6 exhaust ports 42.
  • the furnace further includes a ring wall 44 which supports the crown 40.
  • the furnace also includes a rotatable base 46 mounted on an oscillation table 48 that oscillates in an the x and y direction as shown in Figure 2.
  • the base is rotatable about an axis 50.
  • the crown 40, the ring wall 44, the base 46 and the lateral walls are all made from suitable refractory materials such as zircon.
  • Commonly assigned United States patent number 5,696,038 describes oscillation and rotation patterns for improving off-axis homogeneity in fused silica boules.
  • x(t) and y(t) represent the coordinates of the center of the boule as measured from the center of the furnace ringwall as a function of time (t) measured in minutes.
  • the sum of r1 and r2 must be less than the difference between the radius of the ringwall and radius of the containment vessel or cup to avoid contact between these structures during formation of the boule.
  • the parameters r**, r 2 , ⁇ - ⁇ , ⁇ 2 , and a fifth parameter, ⁇ 3 which represents the boule's rotation rate about its center in revolutions per minute (rpm) define the total motion of the boule.
  • Typical values for ⁇ ⁇ , ⁇ 2 and ⁇ 3 used in the manufacture of titania- containing silica boules are 1.71018 rpm, 3.63418 rpm and 4.162 rpm, respectively.
  • striae in silica-titania ultra low expansion glass boules can be reduced by modification of several manufacturing parameters during flame hydrolysis.
  • Applicants have been able to manufacture boules and extreme ultraviolet elements having rms striae values less than about 0.05 MPa, preferably less than about 0.03 MPa, and more preferably less than about 0.02 MPa. Peak to valley striae values were reduced to less than 0.2 MPa and preferably less than 0.15 MPa.
  • the titania-silica glass contains between about 5 weight percent and 10 weight percent titania, and preferably the amount of titania is between about 6 weight percent and 10 weight percent. According to one preferred embodiment of the present invention, the titania-silica glass contains about 7 weight percent titania.
  • powders, ultra low expansion glass bodies and EUV optical elements having a homogeneous titania-silica glass titania level in the range from 6 wt. % to about 9 wt. % and a homogeneous CTE in the range of about + 30 ppb/° C to -30 ppb/° C between about 20° C and 35° C, preferably in the range of about + 20 ppb/° C to -20 ppb/° C between about 20° C and 35° C. More preferably, the powder, the glass and optical elements have a homogeneous titania-silica glass titania level in the range from 6 wt. % to about 9 wt.
  • the powder particles and the titania-containing silica glass have a titania level in the range from 6 wt. % to 8 wt. %. More preferably, the powder, the consolidated glass and the EUV optical substrate have a titania level in the range from 6 wt. % to 8 wt. %. More preferably, the titania-containing silica powder particles and the silica glass titania level are between about 6.8 and 7.5 wt. %.
  • a microprobe which measures titania concentration in the glass at one micron intervals.
  • One disadvantage of using a microprobe for measuring striae is that such measurements are very time consuming and extensive sample preparation is required. Thus, the use of a microprobe for regularly measuring striae is not cost- effective.
  • a polariscope which measures optical retardation in glass samples, can be used to measure striae in titania-silica glass. As polarized light propagates through a strained glass or plastic material, it experiences a retardation proportional to the amount of stress. A polariscope is an instrument which quantitatively measures this retardation. Stress in a sample can be determined by knowing the amount of retardation, the path length of light through the sample, which is typically the sample thickness, and the birefringence or stress optical constant of a sample which is a known value. United States patent number 4,668,086 contains more information on the operation and construction of a polariscope.
  • the polariscope measures retardance through a sample as a function of position.
  • the spatial resolution of a polariscope is much smaller than the size of the striae in titania-silica glass and therefore allows for measurement through striae layers.
  • the retardance observed in the polariscope indicates stresses between striae layers, which are most likely due to thermal expansion mismatch between the layers.
  • Figure 3 shows a comparison of striae measurements made on a sample.
  • the lower line in Figure 3 represents striae measurements made by a polariscope, and the upper line represents measurements made by a microprobe.
  • the polariscope used is available from Cambridge Research Instrumentation, Model LC, which was used with a Nikon microscope.

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Abstract

Titania-containing silica glass bodies and extreme ultraviolet elements having low levels of striae are disclosed. Methods and apparatus for manufacturing and measuring striae in glass elements and extreme ultraviolet elements are also disclosed.

Description

REDUCED STRIAE EXTREME ULTRAVIOLET ELEMENTS
FIELD OF THE INVENTION [0001] This invention relates to extreme ultraviolet elements made from glasses including silica and titania. More particularly, the invention relates to extreme ultraviolet elements having reduced striae and methods and apparatus for making such elements and measuring striae.
BACKGROUND OF THE INVENTION [0002] Ultra low expansion glasses and soft x-ray or extreme ultraviolet (EUV) lithographic elements made from silica and titania traditionally have been made by flame hydrolysis of organometallic precursors of silica and titania. Ultra-low expansion silica-titania articles of glass made by the flame hydrolysis method are used in the manufacture of elements used in mirrors for telescopes used in space exploration and extreme ultraviolet or soft x-ray-based lithography. These lithography elements are used with extreme ultraviolet or soft x-ray radiation to illuminate, project and reduce pattern images that are utilized to form integrated circuit patterns. The use of extreme ultraviolet or soft x-ray radiation is beneficial in that smaller integrated circuit features can be achieved, however, the manipulation and direction of radiation in this wavelength range is difficult. Accordingly, wavelengths in the extreme ultraviolet or soft x-ray range, such as in the 1 nm to 70 nm range, have not been widely used in commercial applications. One of the limitations in this area has been the inability to economically manufacture mirror elements that can withstand exposure to such radiation while maintaining a stable and high quality circuit pattern image. Thus, there is a need for stable high quality glass lithographic elements containing for use with extreme soft x-ray radiation. [0003] One limitation of ultra low expansion titania-silica glass made in accordance with the method described above is that the glass contains striae. Striae are compositional inhomogeneities which adversely affect optical transmission in lens and window elements made from the glass. Striae can be measured by a microprobe that measures compositional variations that correlate to coefficient of thermal expansion (CTE) variations of a few ppb/°C. In some cases, striae have been found to impact surface finish at an angstrom root mean rms level in reflective optic elements made from the glass. Extreme ultraviolet lithographic elements require finishes having a very low rms level.
[0004] It would be advantageous to provide improved methods and apparatus for manufacturing ultra low expansion glasses containing silica and titania. In particular, it would be desirable to provide extreme ultraviolet elements having reduced striae and methods and apparatus that are capable of producing such glass elements. In addition, it would be desirable to provide improved methods and apparatus for measuring striae in ultra low expansion glass and extreme ultraviolet lithographic elements.
SUMMARY OF THE INVENTION [0005] The invention relates to ultra low expansion glass extreme ultraviolet optical or lithographic elements and methods for their manufacture. Methods and apparatus are provided for producing ultra low expansion glass bodies and extreme ultraviolet optical or lithographic elements having decreased striae. As used herein, the terms extreme ultraviolet (abbreviated as EUV) and soft x-ray will be used interchangeably to refer to short wavelengths of electromagnetic radiation between 1 nm and 70 nm. Presently, lithographic systems that utilize EUV radiation operate between 5 and 15 nm, and typically around 13 nm.
[0006] According to one embodiment of the invention, an extreme ultraviolet lithographic element is provided that includes a titania-containing silica glass having a polished and shaped surface and having a rms striae level less than about 0.05 mega Pascals. In another embodiment, the element has a peak to valley striae level less than about 0.2 mega Pascals. In certain embodiments, the glass contains between about 5 and 10 weight percent titania and has a coefficient of thermal expansion in the range of about + 30 ppb/° C to -30 ppb/° C between about 20° C and 35° C. In still other embodiments, the glass contains between about 6 weight % titania and 8 weight % titania and has a homogeneous CTE in the range of about + 20 ppb/° C to -20 ppb/° C between about 20° C and 35° C. [0007] Still another embodiment of the invention relates to a method of manufacturing an extreme ultraviolet lithography element. The method includes the steps of providing a silicon-containing feedstock and a titanium-containing feedstock, delivering the feedstocks to a conversion site, and converting the feedstocks into titania-containing silica soot. The method further includes consolidating the titania- containing silica soot into a low inclusion, homogeneous titania-containing silica glass preform and finishing the titanium-containing glass preform into an extreme ultraviolet lithographic element having an rms striae level less than about 0.05 mega Pascals.
[0008] In certain embodiments, the conversion site includes a furnace having exhaust vents and the method includes maintaining said striae level by controlling exhaust vent flow during the manufacturing process. In some embodiments, the method includes providing the furnace with more than six exhaust vents. In other embodiments, the striae level is controlled by adjusting the distance between the preform and the burner. In still other embodiments, the soot is deposited into a cup mounted on an oscillating table and the striae level is reduced by altering the oscillation pattern of the table, and in particular by increasing the rotation rate of the table. For example, in some embodiments, the rotation rate of the boule is greater than about 6 rpm.
[0009] Another embodiment of the invention relates to a method of measuring striae in an extreme ultraviolet lithographic element which includes utilizing a polariscope to measure the optical retardance in the element as a function of position and converting the optical retardance to stress values. According to this embodiment, after the optical retardance as a function of position is measured, the retardance values are converted to a stress level value by knowing the path length, i.e. the thickness, over which optical retardance is measured and the stress optical coefficient of the material. In some embodiments, the polariscope has a sensitivity of at least 0.05 nm, and in other embodiments, the polariscope utilizes a light source having a beam size less than the spacing of the striae in the extreme ultraviolet lithographic element.
[0010] Thus, according to the present invention, extreme ultraviolet elements having reduced striae and methods and apparatus are provided for the manufacture of these elements and measurement of striae in these elements. Methods and apparatus are also provided for measuring low levels of striae in glasses and extreme ultraviolet elements.
[0011] Additional advantages of the invention will be set forth in the following detailed description. It is to be understood that both the foregoing general description and the following detailed description are exemplary and are intended to provide further explanation of the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS [0012] FIG. 1 is a schematic drawing of an apparatus for manufacturing ultra low expansion glass according to one embodiment of the invention; [0013] FIG. 2 is a schematic drawing of an apparatus for manufacturing ultra low expansion glass according to one embodiment of the invention; and [0014] FIG. 3 is a graph comparing striae measurement techniques utilizing a polariscope and utilizing a microprobe.
DETAILED DESCRIPTION [0015] The invention provides glass bodies and extreme ultraviolet elements having low thermal expansion and homogeneous titanium concentrations and methods and apparatus for their manufacture. The methods and apparatus are particularly beneficial for the manufacture of extreme ultraviolet optical elements such as lithography substrates for both lithography masks and lithography mirror optics. The methods and apparatus substantially reduce striae problems encountered during the formation of boules, particularly when the glass is ground and polished into a curved mirror reflective surface that cuts across the planar striae levels.
[0016] The invention further pertains to making thermally stable EUV lithography structure objects such as optical mirror lithography element substrate structures and reflective lithography mask element substrate structures. PCT patent publication WO 01/08163, entitled EUV SOFT X-RAY PROJECTION LITHOGRAPHIC METHOD SYSTEM AND LITHOGRAPHY ELEMENTS commonly assigned to CORNING INCORPORATED and naming Davis et al. as inventors and WO 01/07967, entitled EUV SOFT X-RAY PROJECTION LITHOGRAPHIC METHOD AND MASK DEVICES commonly assigned to CORNING INCORPORATED and naming Davis et al. as inventors, the contents of which are hereby incorporated by reference discloses EUV lithography mirror element and mask structures.
[0017] According to the present invention, methods and apparatus are provided for the production ultra low expansion titania-silica glass used in the manufacture of extreme ultraviolet lithographic elements. In overview, silica-titania powders are manufactured as shown in Fig. 1 through flame hydrolysis of silica- containing and titanium-containing feedstocks.
[0018] As shown in Fig. 1 , a conventional apparatus for the manufacture of titania-containing silica glasses includes high purity silicon-containing feedstock or precursor 14 and high purity titanium-containing feedstock or precursor 26. The feedstock or precursor materials are typically siloxanes, alkoxides and tetrachlorides containing titanium or silicon. One particular commonly used silicon-containing feedstock material is octamethylcyclotetrasiloxane, and one particular commonly used titanium-containing feedstock material is titanium isopropoxide. An inert bubbler gas 20 such as nitrogen is bubbled through feedstocks 14 and 26, to produce mixtures containing the feedstock vapors and carrier gas. An inert carrier gas 22 such as nitrogen is combined with the silicon feedstock vapor and bubbler gas mixture and with the titanium feedstock vapor and bubbler gas mixture to prevent saturation and to deliver the feedstock materials 14, 26 to a conversion site 10 within furnace 16 through distribution systems 24 and manifold 28. The silicon feedstock and vapor and titanium feedstock and vapor are mixed in a manifold 28 to form a vaporous, titanium-containing silica glass precursor mixture which is delivered through conduits 34 to burners 36 mounted in the upper portion 38 of the furnace 16. The burners 36 produce burner flames 37. Conversion site burner flames 37 are formed with a fuel and oxygen mixture such as methane mixed with hydrogen and/or oxygen, which combusts, oxidizes and converts the feedstocks at temperatures greater than about 1600° C into soot 11. The burner flames 37 also provide heat to consolidate the soot 11 into glass. The temperature of the conduits 34 and the feedstocks contained in the conduits are typically controlled and monitored in minimize the possibility of reactions prior to the flames 37. [0019] The feedstocks are delivered to a conversion site 10, where they are converted into titania-containing silica soot particles 11. The soot 11 is deposited in a revolving collection cup 12 located in a refractory furnace 16 typically made from zircon and onto the upper glass surface of a hot titania-silica glass body 18 inside the furnace 16. The soot particles 11 consolidate into a titania-containing high purity silica glass body.
[0020] The cup 12 typically has a circular diameter shape of between about
0.2 meters and 2 meters so that the glass body 18 is a cylindrical body having a diameter D between about 0.2 and 2 meters and a height H between about 2 cm and 20 cm. The weight percent of titania in the fused silica glass can be adjusted by changing the amount of either the titanium feedstock or silicon-containing feedstock delivered to the conversion site 10 that is incorporated into the soot 11 and the glass 18. The amount of titania and/or silica is adjusted so that the glass body has a coefficient of thermal expansion of about zero at the operating temperature of an EUV or soft x-ray reflective lithography or mirror element.
[0021] The powders are collected in the cup and consolidated into a glass boule. Typically, temperatures above 1600° C are sufficient to consolidate the powder into a glass boule. After a boule of the desired size is formed, the glass boule can be removed from the furnace for further processing. [0022] Referring now to Fig. 2, which shows the furnace in more detail, the furnace 16 further includes crown 40 which carries a plurality of burners 37 which produce silica soot. Further details on the structure and operation of furnaces of this type may be found in commonly assigned United States patent number 5,951 ,730, the entire contents of which are incorporated herein by reference. Particular details on burner configurations for making fused silica boules may be found in commonly- assigned PCT patent publication number WO 00/17115. The furnace 16 also includes a plurality of exhaust ports or vents 42, evenly spaced around the circumference of the furnace. Typically, a furnace 16 includes 6 exhaust ports 42. The furnace further includes a ring wall 44 which supports the crown 40. The furnace also includes a rotatable base 46 mounted on an oscillation table 48 that oscillates in an the x and y direction as shown in Figure 2. The base is rotatable about an axis 50. The crown 40, the ring wall 44, the base 46 and the lateral walls are all made from suitable refractory materials such as zircon. [0023] Commonly assigned United States patent number 5,696,038 describes oscillation and rotation patterns for improving off-axis homogeneity in fused silica boules. As disclosed in United States patent number 5,696,038, the x-axis and y- axis oscillation patterns were defined by the equations: [0024] x(t) = r-i sin2t/ α.ιt + r2 sin2 πω2\
[0025] y(t) = r-i cos2rtωιt + r2cos2 πω2\
[0026] where x(t) and y(t) represent the coordinates of the center of the boule as measured from the center of the furnace ringwall as a function of time (t) measured in minutes. The sum of r1 and r2 must be less than the difference between the radius of the ringwall and radius of the containment vessel or cup to avoid contact between these structures during formation of the boule. The parameters r**, r2, ω-\, ω2, and a fifth parameter, ω3, which represents the boule's rotation rate about its center in revolutions per minute (rpm) define the total motion of the boule. Typical values for ω\, ω2 and ω3 used in the manufacture of titania- containing silica boules are 1.71018 rpm, 3.63418 rpm and 4.162 rpm, respectively. [0027] According to certain embodiments of the present invention, applicants have demonstrated that striae in silica-titania ultra low expansion glass boules can be reduced by modification of several manufacturing parameters during flame hydrolysis. Applicants have been able to manufacture boules and extreme ultraviolet elements having rms striae values less than about 0.05 MPa, preferably less than about 0.03 MPa, and more preferably less than about 0.02 MPa. Peak to valley striae values were reduced to less than 0.2 MPa and preferably less than 0.15 MPa. In one embodiment, the titania-silica glass contains between about 5 weight percent and 10 weight percent titania, and preferably the amount of titania is between about 6 weight percent and 10 weight percent. According to one preferred embodiment of the present invention, the titania-silica glass contains about 7 weight percent titania.
[0028] In certain preferred embodiments, powders, ultra low expansion glass bodies and EUV optical elements are provided having a homogeneous titania-silica glass titania level in the range from 6 wt. % to about 9 wt. % and a homogeneous CTE in the range of about + 30 ppb/° C to -30 ppb/° C between about 20° C and 35° C, preferably in the range of about + 20 ppb/° C to -20 ppb/° C between about 20° C and 35° C. More preferably, the powder, the glass and optical elements have a homogeneous titania-silica glass titania level in the range from 6 wt. % to about 9 wt. % and a homogeneous CTE in the range of about + 10 ppb/° C to -10 ppb/° C between about 20° and 35° C, and most preferably a CTE in the range of about + 5 ppb/° C to -5 ppb/° C between about 20° C and 35° C, with the CTE having a variation in coefficient of thermal expansion less than 5 ppb/° C. Preferably the powder particles and the titania-containing silica glass have a titania level in the range from 6 wt. % to 8 wt. %. More preferably, the powder, the consolidated glass and the EUV optical substrate have a titania level in the range from 6 wt. % to 8 wt. %. More preferably, the titania-containing silica powder particles and the silica glass titania level are between about 6.8 and 7.5 wt. %.
[0029] Modifications to flame hydrolysis process that allowed for the manufacture of ultra low expansion titania-silica boules included making changes to the oscillation patterns of the boule during the flame hydrolysis process. As noted above, typical values for the manufacture of titania-silica boules for ω\, ω and α/3 are 1.71018 rpm, 3.63418 rpm and 4.162 rpm, respectively. Applicants have discovered that by increasing these values each to above 5.0 reduced striae levels in titania-silica glass produced by the flame hydrolysis process. I,n one particularly preferred embodiment, the values for ω**, ω2 and ω3 were increased to 7.0488, 7.7563 and 6.5736, respectively, resulting in a significant reduction in striae in the glass.
[0030] In addition to changing the oscillation pattern of the boule, applicants observed other factors that impacted striae. In one experiment, flows through the exhaust ports or vents in the furnace were adjusted to determine the effect on striae. Plugging or reduction of vents in the furnace caused the striae in the titania silica glass to be worse than when operating the furnace with six vents. Thus, increasing the number of vents or exhaust ports beyond the six exhaust ports contained in a standard furnace will likely improve striae values. Another observation during experimentation was that titania-silica glass near the bottom of the cup contained less striae than titania-silica glass near the top of the cup. This led to the conclusion that both the distance of the burners from the bottom of the cup and the depth of the cup impact striae, and that a deeper cup and increasing the distance between the burners and the boule surface should reduce striae.
[0031] In another aspect of the invention, improved methods for measuring striae were developed. One way for measuring striae in titania-silica glass involves using a microprobe, which measures titania concentration in the glass at one micron intervals. One disadvantage of using a microprobe for measuring striae is that such measurements are very time consuming and extensive sample preparation is required. Thus, the use of a microprobe for regularly measuring striae is not cost- effective.
[0032] Applicants have discovered that a polariscope, which measures optical retardation in glass samples, can be used to measure striae in titania-silica glass. As polarized light propagates through a strained glass or plastic material, it experiences a retardation proportional to the amount of stress. A polariscope is an instrument which quantitatively measures this retardation. Stress in a sample can be determined by knowing the amount of retardation, the path length of light through the sample, which is typically the sample thickness, and the birefringence or stress optical constant of a sample which is a known value. United States patent number 4,668,086 contains more information on the operation and construction of a polariscope.
[0033] Thus, the polariscope measures retardance through a sample as a function of position. The spatial resolution of a polariscope is much smaller than the size of the striae in titania-silica glass and therefore allows for measurement through striae layers. The retardance observed in the polariscope indicates stresses between striae layers, which are most likely due to thermal expansion mismatch between the layers. Figure 3 shows a comparison of striae measurements made on a sample. The lower line in Figure 3 represents striae measurements made by a polariscope, and the upper line represents measurements made by a microprobe. The polariscope used is available from Cambridge Research Instrumentation, Model LC, which was used with a Nikon microscope. As indicated by Figure 3, there is good correlation between the two techniques, which shows that the polariscope can be used to measure striae in titania-silica glass and optical elements such as extreme ultraviolet lithographic elements. An advantage of using a polariscope is that method is very sensitive (as high as 0.01 nm), and light beam sizes smaller than the spacing of the striae (e.g., 50-300 microns) can be used. [0034] It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention covers modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims

What is claimed is:
1. An extreme ultraviolet lithographic element comprising: a titania-containing silica glass having a polished and shaped surface and having a rms striae level less than 0.05 mega Pascals.
2. The lithography element of claim 1 , wherein the element has a peak to valley striae level less than 0.2 mega Pascals.
3. The lithography element of claim 2, wherein the glass contains between 5 and 10 weight percent titania and has a coefficient of thermal expansion in the range of + 30 ppb/° C to -30 ppb/° C between 20° C and 35° C.
4. The lithography element of claim 2, wherein the glass contains between 6 weight % titania and 8 weight % titania and has a homogeneous CTE in the range of + 20 ppb/° C to -20 ppb/° C between about 20° C and 35° C.
5. A method of manufacturing an extreme ultraviolet lithography element comprising: providing a silicon-containing feedstock and a titanium containing feedstock; delivering the silicon-containing feedstock and titanium-containing feedstock to a conversion site; converting the silicon-containing feedstock and titanium-containing feedstock into titania-containing silica soot; consolidating the titania-containing silica soot into an inclusion-free, homogeneous titanium-containing silica glass preform; and finishing the titanium-containing glass preform into an extreme ultraviolet lithographic element having a rms striae level less than 0.05 mega Pascals.
6. The method of claim 5, wherein the conversion site includes a furnace having exhaust vents and the method includes maintaining said striae level by controlling exhaust vent flow during the manufacturing process.
7. The method of claim 5, further including providing the furnace with more than six exhaust vents.
8. The method of claim 5, wherein the striae level is modified by adjusting the distance between the preform and the burner.
9. The method of claim 5, wherein soot is deposited into a cup mounted on an oscillating table and the striae level is decreased by increasing the rotation rate of the table.
10. The method of claim 9, wherein the rotation rate of the boule is greater than 6 rpm.
11. A method of measuring striae in an extreme ultraviolet lithographic element comprising utilizing a polariscope to measure the optical retardance in the element as a function of position and converting the optical retardance to stress values.
12. The method of claim 11 , wherein the polariscope has a sensitivity of at least 0.05 nm.
13. The method of claim 11 , wherein the polariscope utilizes light source having a beam size less than the spacing of the striae in the element.
PCT/US2003/006825 2002-03-05 2003-03-04 Reduced striae extreme ultraviolegt lithographic elements, a method of manufacturing the same and a method of measuring striae WO2003077038A2 (en)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004089838A1 (en) * 2003-04-03 2004-10-21 Asahi Glass Company Limited Silica glass containing tio2 and optical material for euv lithography
EP1471038A2 (en) * 2003-04-26 2004-10-27 Schott Glas Process for producing glass articles of doped silica glass
JP2005228875A (en) * 2004-02-12 2005-08-25 Canon Inc Exposure apparatus and device manufacturing method
JP2006306674A (en) * 2005-04-28 2006-11-09 Shinetsu Quartz Prod Co Ltd Silica-titania glass for nanoimprint stamper
EP1795506A1 (en) * 2005-12-08 2007-06-13 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method, euv lithographic member and photomask substrate
EP2003098A1 (en) * 2007-06-06 2008-12-17 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
EP2014624A3 (en) * 2007-06-06 2010-04-21 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
WO2010131662A1 (en) 2009-05-13 2010-11-18 旭硝子株式会社 Method for producing tio2-sio2 glass body, method for heat-treating tio2-sio2 glass body, tio2-sio2 glass body, and optical base for euvl
WO2010134449A1 (en) 2009-05-18 2010-11-25 旭硝子株式会社 Method for producing tio2-sio2 glass body, method for heat-treating tio2-sio2 glass body, tio2-sio2 glass body, and optical base for euvl
EP2426091A1 (en) * 2010-09-02 2012-03-07 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method
WO2012105513A1 (en) 2011-01-31 2012-08-09 旭硝子株式会社 Method for producing silica glass body containing titania, and silica glass body containing titania
US9382151B2 (en) 2014-01-31 2016-07-05 Corning Incorporated Low expansion silica-titania articles with a Tzc gradient by compositional variation

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7053017B2 (en) * 2002-03-05 2006-05-30 Corning Incorporated Reduced striae extreme ultraviolet elements
JP4792706B2 (en) * 2003-04-03 2011-10-12 旭硝子株式会社 Silica glass containing TiO2 and method for producing the same
US7155936B2 (en) 2003-08-08 2007-01-02 Corning Incorporated Doped silica glass articles and methods of forming doped silica glass boules and articles
DE10359102A1 (en) 2003-12-17 2005-07-21 Carl Zeiss Smt Ag Optical component comprises a material with a longitudinal expansion coefficient which is spatially dependent
JP4492123B2 (en) * 2004-01-05 2010-06-30 旭硝子株式会社 Silica glass
DE102004015766B4 (en) * 2004-03-23 2016-05-12 Asahi Glass Co., Ltd. Use of a SiO 2 -tiO 2 glass as a radiation-resistant substrate
DE102004024808B4 (en) * 2004-05-17 2006-11-09 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass blank for an optical component for transmitting extremely short-wave ultraviolet radiation
JP4487783B2 (en) * 2005-01-25 2010-06-23 旭硝子株式会社 Method for producing silica glass containing TiO2 and optical member for EUV lithography using silica glass containing TiO2
US20100154474A1 (en) * 2005-12-21 2010-06-24 Lorrie Foley Beall Reduced striae low expansion glass and elements, and a method for making same
US20070263281A1 (en) * 2005-12-21 2007-11-15 Maxon John E Reduced striae low expansion glass and elements, and a method for making same
US20070137252A1 (en) * 2005-12-21 2007-06-21 Maxon John E Reduced striae low expansion glass and elements, and a method for making same
US20070137253A1 (en) * 2005-12-21 2007-06-21 Beall Lorrie F Reduced striae low expansion glass and elements, and a method for making same
EP2247546B1 (en) 2008-02-26 2016-02-24 Asahi Glass Company, Limited Tio2-containing silica glass and optical member for euv lithography using high energy densities as well as special temperature controlled process for its manufacture
EP2250133A1 (en) * 2008-02-29 2010-11-17 Asahi Glass Company, Limited Tio2-containing silica glass and optical member for lithography using the same
EP2256789B1 (en) 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflective mask blank for euv lithography
JP2010135732A (en) * 2008-08-01 2010-06-17 Asahi Glass Co Ltd Substrate for euv mask blanks
US8328417B2 (en) * 2009-08-20 2012-12-11 Corning Incorporated Photoelastic method for absolute determination of zero CTE crossover in low expansion silica-titania glass samples
US8713969B2 (en) * 2009-08-31 2014-05-06 Corning Incorporated Tuning Tzc by the annealing of ultra low expansion glass
DE102009043680A1 (en) 2009-09-30 2011-03-31 Heraeus Quarzglas Gmbh & Co. Kg Blank made of titanium-doped, high-silica glass for a mirror substrate for use in EUV lithography and method for its production
EP2518030A4 (en) * 2009-12-01 2013-09-11 Asahi Glass Co Ltd Silica glass containing tio2
CN103003054B (en) * 2010-07-12 2014-11-19 旭硝子株式会社 TIO2-containing quartz-glass substrate for an imprint mold and manufacturing method therefor
US20120026473A1 (en) 2010-07-29 2012-02-02 Michael Lucien Genier Highly reflective, hardened silica titania article and method of making
US8524319B2 (en) 2011-11-18 2013-09-03 Memc Electronic Materials, Inc. Methods for producing crucibles with a reduced amount of bubbles
US8857214B2 (en) * 2011-11-18 2014-10-14 Sunedison Semiconductor Limited Methods for producing crucibles with a reduced amount of bubbles
US8987155B2 (en) 2012-08-30 2015-03-24 Corning Incorporated Niobium doped silica titania glass and method of preparation
US9505649B2 (en) 2013-09-13 2016-11-29 Corning Incorporated Ultralow expansion glass
US20150239767A1 (en) 2014-02-26 2015-08-27 Corning Incorporated HEAT TREATING SILICA-TITANIA GLASS TO INDUCE A Tzc GRADIENT
US10017413B2 (en) 2014-11-26 2018-07-10 Corning Incorporated Doped silica-titania glass having low expansivity and methods of making the same
US10427974B2 (en) 2015-03-26 2019-10-01 Corning Incorporated Glass composite for use in extreme ultra violet lithography
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
US10486997B2 (en) * 2016-11-10 2019-11-26 Goodrich Corporation Joining members using additive manufacturing
DE102016224236A1 (en) 2016-12-06 2017-01-26 Carl Zeiss Smt Gmbh Blank made of TiO2-doped quartz glass, optical element for EUV lithography and EUV lithography system with it
JP7068309B2 (en) 2016-12-21 2022-05-16 コーニング インコーポレイテッド Sintering system and sintered articles

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696038A (en) 1995-09-12 1997-12-09 Corning Incorporated Boule oscillation patterns in methods of producing fused silica glass
EP0901989A1 (en) 1997-09-11 1999-03-17 Nikon Corporation Silica glass and its manufacturing method
WO2001008163A1 (en) 1999-07-22 2001-02-01 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithography elements

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668086A (en) 1985-05-20 1987-05-26 Salomon Redner Stress and strain measuring apparatus and method
US5154744A (en) * 1991-08-26 1992-10-13 Corning Incorporated Method of making titania-doped fused silica
JPH0660421A (en) * 1992-07-31 1994-03-04 Victor Co Of Japan Ltd Rewritable optical recording medium and its recording and erasing method
JP2639514B2 (en) * 1994-07-11 1997-08-13 信越石英 株式会社 Laser lithography equipment
DE69620896T2 (en) 1995-09-12 2002-10-10 Corning Inc., Corning CALLED DETECTION METHOD
EP0850199B1 (en) * 1995-09-12 2005-12-28 Corning Incorporated Method and Furnace for the Production of Silica Glass containing less striae
JP4438126B2 (en) * 1998-06-08 2010-03-24 旭硝子株式会社 Stepped glass plate
JP2002526363A (en) 1998-09-22 2002-08-20 コーニング インコーポレイテッド Burner for producing boules of fused silica glass
JP4601022B2 (en) 1999-03-04 2010-12-22 信越石英株式会社 Synthetic quartz glass member for ArF excimer laser lithography
AU5932500A (en) 1999-07-22 2001-02-13 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
US6776006B2 (en) * 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US6606883B2 (en) * 2001-04-27 2003-08-19 Corning Incorporated Method for producing fused silica and doped fused silica glass
US6997015B2 (en) * 2001-11-27 2006-02-14 Corning Incorporated EUV lithography glass structures formed by extrusion consolidation process
US20030159466A1 (en) * 2002-02-27 2003-08-28 Bowden Bradley F. Dry pressing of spray dried soot to make EUV components
US6829908B2 (en) * 2002-02-27 2004-12-14 Corning Incorporated Fabrication of inclusion free homogeneous glasses
US7053017B2 (en) * 2002-03-05 2006-05-30 Corning Incorporated Reduced striae extreme ultraviolet elements

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696038A (en) 1995-09-12 1997-12-09 Corning Incorporated Boule oscillation patterns in methods of producing fused silica glass
EP0901989A1 (en) 1997-09-11 1999-03-17 Nikon Corporation Silica glass and its manufacturing method
WO2001008163A1 (en) 1999-07-22 2001-02-01 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithography elements

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7462574B2 (en) 2003-04-03 2008-12-09 Asahi Glass Company, Limited Silica glass containing TiO2 and optical material for EUV lithography
WO2004089838A1 (en) * 2003-04-03 2004-10-21 Asahi Glass Company Limited Silica glass containing tio2 and optical material for euv lithography
EP1471038A2 (en) * 2003-04-26 2004-10-27 Schott Glas Process for producing glass articles of doped silica glass
EP1471038A3 (en) * 2003-04-26 2005-11-23 Schott Ag Process for producing glass articles of doped silica glass
JP2005228875A (en) * 2004-02-12 2005-08-25 Canon Inc Exposure apparatus and device manufacturing method
JP2006306674A (en) * 2005-04-28 2006-11-09 Shinetsu Quartz Prod Co Ltd Silica-titania glass for nanoimprint stamper
KR101076491B1 (en) 2005-12-08 2011-10-24 신에쓰 가가꾸 고교 가부시끼가이샤 Titania-doped quartz glass and making method, euv lithographic member and photomask substrate
US7585598B2 (en) 2005-12-08 2009-09-08 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method, EUV lithographic member and photomask substrate
EP1795506A1 (en) * 2005-12-08 2007-06-13 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method, euv lithographic member and photomask substrate
US7849711B2 (en) 2005-12-08 2010-12-14 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method, EUV lithographic member and photomask substrate
US7935648B2 (en) 2007-06-06 2011-05-03 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
EP2014624A3 (en) * 2007-06-06 2010-04-21 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
EP2003098A1 (en) * 2007-06-06 2008-12-17 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
US7923394B2 (en) 2007-06-06 2011-04-12 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
WO2010131662A1 (en) 2009-05-13 2010-11-18 旭硝子株式会社 Method for producing tio2-sio2 glass body, method for heat-treating tio2-sio2 glass body, tio2-sio2 glass body, and optical base for euvl
US8590342B2 (en) 2009-05-13 2013-11-26 Asahi Glass Company, Limited Method for producing TiO2-SiO2 glass body, method for heat-treating TiO2-SiO2 glass body, TiO2-SiO2 glass body, and optical base for EUVL
WO2010134449A1 (en) 2009-05-18 2010-11-25 旭硝子株式会社 Method for producing tio2-sio2 glass body, method for heat-treating tio2-sio2 glass body, tio2-sio2 glass body, and optical base for euvl
EP2426091A1 (en) * 2010-09-02 2012-03-07 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method
US8820122B2 (en) 2010-09-02 2014-09-02 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method
WO2012105513A1 (en) 2011-01-31 2012-08-09 旭硝子株式会社 Method for producing silica glass body containing titania, and silica glass body containing titania
US9382151B2 (en) 2014-01-31 2016-07-05 Corning Incorporated Low expansion silica-titania articles with a Tzc gradient by compositional variation

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USRE40586E1 (en) 2008-11-25
WO2003077038A3 (en) 2004-03-18
KR20040089703A (en) 2004-10-21
US20050241338A1 (en) 2005-11-03
JP2012042966A (en) 2012-03-01
AU2003220982A8 (en) 2003-09-22
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US7053017B2 (en) 2006-05-30
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TWI247196B (en) 2006-01-11
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