WO2003054257A1 - Method for producing particles with diamond structure - Google Patents
Method for producing particles with diamond structure Download PDFInfo
- Publication number
- WO2003054257A1 WO2003054257A1 PCT/EP2002/013160 EP0213160W WO03054257A1 WO 2003054257 A1 WO2003054257 A1 WO 2003054257A1 EP 0213160 W EP0213160 W EP 0213160W WO 03054257 A1 WO03054257 A1 WO 03054257A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- particles
- diamond
- plasma chamber
- forces
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Definitions
- the present invention relates to a method for producing particles having a monocrystalline diamond structure and in particular to a method for vapor-growing of diamond particles under plasma conditions.
- Plasma-assisted Chemical Vapor Deposition is generally known. CVD procedures for carbon deposition with diamond structure are investigated since several years. M. Ishikawa et al. describe the plasma-assisted diamond synthesis under mi- crogravity conditions using a plasma chamber which is schematically illustrated in Fig. 4 (M. Ishikawa et al. in "SPIE conference on materials research in low gravity II", SPIE vol. 3792, July 1990, pp. 283-291 and "Adv. Space Res.”, vol. 24, 1999, pp. 1219-1223) .
- the plasma chamber 100' contains a substrate 10', an anode 20' and a cathode 30'. The distance 21' between anode and cathode is 1 cm.
- the plasma chamber is operated in a DC mode under high pressure (about 5 • 10 3 Pa) . If a mixture of H 2 and CH 4 is supplied to the chamber, carbon with diamond structure can be vapor-grown on the substrate 10' .
- the conventional diamond deposition techniques have a plurality of disadvantages, which restrict the practical applicability of the deposited diamonds.
- An essential disadvantage is the restriction to the thin film formation.
- the rate of diamond growth is extremely low.
- the diamond structure is growing into one direction only.
- the conventional methods could show the appearance of diamonds on the substrate only.
- the thickness of the layers obtained is below the 100 nm range.
- the layers have a polycrystalline structure only.
- the effectivity of the diamond growth is further restricted by the use of relatively small substrates with an area of about 20 mm 2 .
- the prior art procedure does not allow to influence the shape or composition of the carbon layers.
- the plasma-assisted diamond layer formation bases in particular on the provision of electrons with a low electron temperature.
- the electron temperature is a parameter, which describes the average energy distribution of the electrons. According to M. Ishikawa et al., the electron temperature is reduced under the microgravity conditions. A procedure for controlling the electron temperature is described by K. Kato et al. in "Appl. Phys. Lett.”, vol. 65, 1994, pp 816-818, and "Appl. Phys . Lett.”, vol. 76, 2000, pp 547-549.
- the procedure described by K. Kato et al. is implemented with a device which is schematically shown in Fig. 5.
- the device 40' for producing low temperature electrons comprises a plasma source 41' surrounded by a chamber wall 42' and a mesh grid 43' .
- the electron temperature can be decreased by almost 2 orders of magnitude.
- a plasma is produced with the plasma source 41' in region I surrounded by the chamber wall 42' and the grid 43' .
- High energy electrons in the plasma can pass through the grid into the other region II. lonisation occurs due to the electrons in this region II, resulting in production of cold electrons which are not responsible for maintaining the discharge of the plasma source 41' .
- At least one particle having a monocrystalline diamond structure is produced by polydirectional vapor-growing of carbon with diamond or tetragonal structure in a reactive plasma. Due to the polydirectional vapor-growing of carbon, the size of a diamond structure is increased simultaneously toward all directions in space.
- a diamond structure is grown three- dimensionally.
- the growing diamond particles are arranged in a space within a reactive plasma. The particles are kept in this space under the influence of external forces compensating gravity. The forces supporting the particles act contact-free so that the whole surface or at least almost the whole surface of each particle is exposed to the reactive plasma and subjected to the vapor-growing process.
- the particles are grown under microgravity or zerogravity conditions.
- microgravity conditions are obtained in a plasma chamber which is located in the orbit e.g. on a space vehicle like the International Space Station (ISS) or a satellite.
- ISS International Space Station
- Microgravity conditions are present if the gravity is lower than 10 ⁇ 3 g, e. g. 10 "4 g.
- This embodiment has two essential advantages. Firstly, gravity compensating forces are inherently present if the method of the invention is conducted in the orbit. Additional measures for supporting the growing particles are not necessary. In this case, conventional plasma chambers can be used.
- particles with diamond structure are produced under gravity conditions wherein the external gravity compensating forces comprise e.g. thermophoretic forces, mechanical forces, optical forces and/or electrostatic forces.
- the inventors have realized the possibility of supporting the growing particles in the reactive plasma while the surface of the particles is kept free or almost free.
- This embodiment of invention has a particular advantage with regard to the implementation under gravity conditions.
- the plasma chamber can be operated stationary on the earth' surface.
- a particle having a monocrystalline diamond structure is an object, which is covered in all space directions with a diamond layer.
- the object may consist of carbon completely.
- the object may contain a core which has been used as a seed particle and which comprises another material than carbon.
- the core may have a size, which is essentially smaller than the size of the growing particle.
- the core may have a size which is comparable with the size of the growing particle.
- the invention provides a compound particle with a non-carbon carrier and a diamond structure deposited all-round on all surfaces of the carrier.
- the method of the invention is performed in a reactive plasma with low temperature electrons.
- This feature has an essential advantage with regard to the purity of the obtained diamond particles.
- the inventors have found that the chemical bonding forming the diamond structure can be obtained with increased reproducibility.
- the temperature of the electrons is controlled to the range of 0.09 eV to 3 eV.
- the method is conducted in a heated plasma chamber.
- the method of the invention comprises a thermal control.
- the purity and reproducibility of the particle growth is further improved.
- the temperature of the plasma and growing particles is adjusted to the range of 700°C to 1000°C.
- Another subject of the invention is a particle having a diamond structure as such.
- Particles according to the invention have a diameter of at least 10 ⁇ m, preferably at least 100 ⁇ m.
- diamond containing particles may have a predetermined shape and/or composition.
- the invention allows the production of so-called adapted or designed diamonds.
- the diamond structures produced according to the invention are characterized by an extremely high purity which has been proven by Raman spectroscopy experiments.
- the plasma chamber of the invention in particular comprises a plasma generator with a grid for providing low temperature electrons and a force control device for exerting external gravity compensating forces.
- the invention has the following further advantages.
- the method of producing diamond particles can be implemented with any available plasma production techniques (in particular HF plasma, DC plasma, inductively and/or capacitively coupled plasma, magnetron plasma, microwave plasma, arc plasma) .
- the plasma conditions can be obtained in a broad pressure range covering the available techniques from low pressure to high pressure plasmas (about 10 _1 to 10000 Pa) .
- the invention can be implemented with any gas containing carbon.
- the particles can be grown with an essentially increased growth rate of about 1 ⁇ m/h or higher. Contrary to prior art diamond layers which have a polycrystalline diamond structure, the particles of the present invention have a monocrystalline diamond structure. Monocrystals with sizes of at least 10 ⁇ m can be obtained.
- Fig. 1 a schematic diagram of a plasma chamber used for implementing the method of the present invention
- Figs. 2, 3 embodiments of plasma chambers with levitation electrodes
- Fig. 4 a schematic illustration of a conventional plasma chamber
- Fig. 5 an illustration of a cold electron source.
- diamond particles are produced in a plasma chamber 100 which is schematically illustrated in Fig. 1.
- the plasma chamber 100 comprises a plasma generator 40 with electrodes 20, 30 (see below) , a grid 43 for electron- temperature control, a force control device 50 for exerting external gravity compensating forces and a temperature control device 60 for controlling the temperature of the plasma chamber 100. These components are arranged in an enclosure 42 which has an e.g. cylindrical shape.
- the plasma generator 40 and the grid 43 are arranged for producing a reactive plasma in the plasma chamber 100.
- the plasma chamber 100 is separated into two regions I and II by the grid 43. In region II, a plasma with cold electrons is produced as described above with regard to the prior art cold electron sources.
- the vapor- growing of diamond particles 10 (schematically shown) is performed in region II as described below. The growing particles can be monitored and analyzed by an appropriate measurement equipment through the monitoring window 44.
- the components 50 and 60 represent features of the plasma chamber 100 which are not necessarily implemented.
- the force control device 50 can be omitted if the plasma chamber 100 is operated under microgravity or zerogravity conditions.
- the temperature control device 60 can be omitted if the surrounding temperature of the plasma chamber 100 is high enough for obtaining particles with diamond structure.
- the force control device 50 comprises e. g. a levitation electrode 51 (see Figs. 2, 3), a gas supply device, an optical tweezer device or an electrode device for providing electrostatic forces.
- the levitation electrode is arranged for ther- mophoretic levitating the particles.
- Thermophoresis has the advantage of a relatively simple structure of the force control device.
- the levitation electrodes additionally can be used as a temperature control.
- Levitating the particles with a gas supply device allows compensating gravity with a gas flow.
- this gas flow technique is known from other applications in vapor deposition.
- the levitation of particles can be controlled with high precision.
- the use of optical tweezer or electro-static devices provides the capability of controlling the position of single particles.
- the plasma chamber 100 comprises further components for supplying the reaction gases, controlling the pressure, delivering seed particles and taking the diamond particles out of the chamber. These components are implemented with control and manipulation devices which are known as such from the conventional plasma and vacuum technology.
- Figs. 2 and 3 illustrate plasma chambers 100 with further details.
- the plasma generator 40 comprises plasma electrodes 20, 30.
- Plasma electrode 20 has a cylindrical shape surrounding region I of plasma generation.
- Plasma electrode 30 is a platelike electrode with an outer diameter covering the diameter of cylindrical plasma electrode 20. Both electrodes are made of an appropriate inert material, e. g. stainless steel.
- the diameter of plasma electrode 20 is about 10 cm.
- the axial height of plasma electrode 20 is about 5 cm.
- the dimension of plasma chamber 100 or the components thereof generally may be selected like dimensions of conventional plasma chambers. However, the plasma chamber of the invention can be provided with other dimensions depending on the application.
- region I is delimited on one side by plasma electrode 30, the other side is covered with the grid 43 for electron- temperature control.
- the grid is made e. g. from stainless steel with a mesh size of 0.1-1.2 meshes/mm.
- Grid 43 has a negative DC potential so that it functions as a filter for electrons leaving region I.
- Plasma electrodes 20 and 30 can be operated for producing a radio frequency plasma.
- the cylindrical plasma electrode 20 may be the radio frequency electrode (see Fig. 2) or grounded (see Fig. 3) while the other electrode 30 is the counter elec- trode. Details of the plasma generation are not described here as they are known as such.
- the levitation electrode 51 is arranged with an axial distance from the grid 43 of about 5 cm. Electrode 51 is made of a plate or a grid which is heated for generating a thermopho- retic flow inside region II. The temperature of levitation electrode 51 is adjusted with a control device 52.
- the method of the present invention follows the following procedural steps.
- the plasma chamber 100 is operated as it is known from a plasma technology.
- a reactive gas is supplied to the plasma chamber.
- the reaction gas comprises e. g. a mixture of H 2 and CH 4 .
- the contents of CH 4 is selected in the range of 1 to 10%.
- Other possible mixtures of reactive gas are CH 3 OH, C 2 H 5 0H, C 2 H 2 , C0 2 , CO.
- the pressure of the reaction gas is adjusted to be in the range of 10 -1 T to 100 Pa.
- the low pressure regime is preferred under gravity conditions.
- the temperature of the plasma chamber 100 is adjusted to be in the range of 700°C to 1000°C. The temperature is controlled by the temperature control 60 electrically.
- seed particles are provided in the plasma chamber 100, in particular in region II with cold electron plasma.
- the seed particle formation may be implemented according to one of the following approaches.
- seed particles are formed spontaneously in the plasma. The density of spontaneous seed particle formation can be controlled.
- seed particles are supplied externally to the plasma chamber. This seed particle supply is preferred if the method of the invention is performed under gravity conditions.
- seed particles microscopic diamond particles, conducting particles or non-conducting particles are supplied.
- the use of diamond particles has the particular advantage of providing a substrate with the lattice structure to be grown.
- Non-conducting particles e. g. ceramic particles
- conducting metallic particles e. g. Ni
- they can be supplied with certain shapes or sizes so that the shape or size of the growing diamond structure can be influenced.
- carbon from the reactive gas is polydirectionally grown to the seed particles. Carbon is deposited all-round on all surfaces of the particles. During the growth process, the masses of the particles are increased. In conventional processes, particles can occur as an undesired distortion. These particles can grow until a size of about 40 ⁇ m. Bigger particles fall down under the influence of gravity. Contrary to these effects, the present invention allows particle growth into the range of 50 ⁇ m and higher, e. g. from 100 ⁇ m up to the cm range. Under microgravity or zerogravity conditions, particle sizes of e. g. 3 cm can be obtained.
- the shape of diamond particles is controlled by providing seed particles with a predetermined shape and/or by controlling the plasma conditions during the growth process.
- seed particles with whisker shape or loop shape are used.
- additional plasma control electrodes can be provided in the plasma chamber 100. These electrodes may be adapted for generating electro-static or magnetic fields in particular in region II so that a preferred growth direction is obtained.
- the composition of diamond particles can be controlled by an additional substance supply.
- doping impurities can be added for obtaining special features of the diamond particles as e. g. colors or other optical properties.
- Doping impurities are, as an example, dyes or metals.
- Doping impurities be may added as a beam of molecules or atoms or alternatively as powder.
- the obtained compositions have the particular advantage of comprising properties of the diamond as well as the doping impurity. This offers a new dimension for the design of functional materials.
- the arrangement of the plasma generator 40 and the grid 43 within the plasma chamber 100 can be modified depending on the particular operation conditions. Under microgravity or zero- gravitiy conditions, the plasma chamber can be arranged in any space direction. Under gravity conditions, the plasma generator can be arranged on a side wall or on the bottom of the plasma chamber.
- the force control device may comprise a mechanical support for the seed particles and the growing diamond particles.
- the mechanical support comprises e. g. a plurality of filaments or wires which are fixed in the plasma chamber. The ends of the filaments project into the region with low electron temperature plasma. In this situation, the growing of diamond structure on the free surface of the particles is possible.
- the diameter of the filament is e. g. 1-2 ⁇ m.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02779571A EP1456436B1 (en) | 2001-12-20 | 2002-11-22 | Method for producing particles with diamond structure |
AU2002342921A AU2002342921A1 (en) | 2001-12-20 | 2002-11-22 | Method for producing particles with diamond structure |
DE60220183T DE60220183T2 (en) | 2001-12-20 | 2002-11-22 | METHOD FOR PRODUCING PARTICLES WITH DIAMOND STRUCTURE |
US10/499,260 US20050147765A1 (en) | 2001-12-20 | 2002-11-22 | Method for producing particles with diamond structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01130453.2 | 2001-12-20 | ||
EP01130453A EP1321545A1 (en) | 2001-12-20 | 2001-12-20 | Method for producing particles with diamond structure |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003054257A1 true WO2003054257A1 (en) | 2003-07-03 |
Family
ID=8179623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/013160 WO2003054257A1 (en) | 2001-12-20 | 2002-11-22 | Method for producing particles with diamond structure |
Country Status (7)
Country | Link |
---|---|
US (1) | US20050147765A1 (en) |
EP (2) | EP1321545A1 (en) |
AT (1) | ATE362557T1 (en) |
AU (1) | AU2002342921A1 (en) |
DE (1) | DE60220183T2 (en) |
RU (1) | RU2312175C2 (en) |
WO (1) | WO2003054257A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL1020059C2 (en) * | 2002-02-21 | 2003-08-25 | Corus Technology B V | Method and device for coating a substrate. |
US10005672B2 (en) | 2010-04-14 | 2018-06-26 | Baker Hughes, A Ge Company, Llc | Method of forming particles comprising carbon and articles therefrom |
US9205531B2 (en) | 2011-09-16 | 2015-12-08 | Baker Hughes Incorporated | Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond |
US9309582B2 (en) | 2011-09-16 | 2016-04-12 | Baker Hughes Incorporated | Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond |
FR2995999B1 (en) * | 2012-09-27 | 2014-10-17 | Centre Nat Rech Scient | METHOD AND SYSTEM FOR DETECTING AND / OR ANALYZING PARTICLES IN COLD PLASMA |
WO2020036789A1 (en) * | 2018-08-13 | 2020-02-20 | Cemvita Factory, Inc. | Methods and systems for producing structured carbon materials in a microgravity environment |
CN110616459A (en) * | 2019-10-31 | 2019-12-27 | 北京大学东莞光电研究院 | Preparation device and preparation method of large-particle diamond |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0286310A1 (en) * | 1987-03-30 | 1988-10-12 | Crystallume | Fluidized bed diamond particle growth |
JPH01157497A (en) * | 1987-12-14 | 1989-06-20 | Natl Inst For Res In Inorg Mater | Production of granular diamond |
US4859493A (en) * | 1987-03-31 | 1989-08-22 | Lemelson Jerome H | Methods of forming synthetic diamond coatings on particles using microwaves |
GB2219578A (en) * | 1988-06-09 | 1989-12-13 | Toshiba Kk | Manufacturing single-crystal diamond particles |
EP0368490A1 (en) * | 1988-10-20 | 1990-05-16 | Sumitomo Electric Industries, Ltd. | A process for the synthesis of granular diamond |
EP0407894A2 (en) * | 1989-07-13 | 1991-01-16 | Mitsubishi Denki Kabushiki Kaisha | Electrostatic levitation furnace |
US5087434A (en) * | 1989-04-21 | 1992-02-11 | The Pennsylvania Research Corporation | Synthesis of diamond powders in the gas phase |
US6238512B1 (en) * | 1998-01-22 | 2001-05-29 | Hitachi Kokusai Electric Inc. | Plasma generation apparatus |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02265637A (en) * | 1989-04-06 | 1990-10-30 | Kobe Steel Ltd | Synthesizing process for diamond |
US5704976A (en) * | 1990-07-06 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Navy | High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
US5470661A (en) * | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
JP3728465B2 (en) * | 1994-11-25 | 2005-12-21 | 株式会社神戸製鋼所 | Method for forming single crystal diamond film |
JP3824675B2 (en) * | 1995-03-03 | 2006-09-20 | 有限会社デジタル・ウェーブ | Crystal manufacturing equipment |
-
2001
- 2001-12-20 EP EP01130453A patent/EP1321545A1/en not_active Withdrawn
-
2002
- 2002-11-22 DE DE60220183T patent/DE60220183T2/en not_active Expired - Fee Related
- 2002-11-22 RU RU2004122127/15A patent/RU2312175C2/en active
- 2002-11-22 US US10/499,260 patent/US20050147765A1/en not_active Abandoned
- 2002-11-22 AT AT02779571T patent/ATE362557T1/en not_active IP Right Cessation
- 2002-11-22 EP EP02779571A patent/EP1456436B1/en not_active Expired - Lifetime
- 2002-11-22 AU AU2002342921A patent/AU2002342921A1/en not_active Abandoned
- 2002-11-22 WO PCT/EP2002/013160 patent/WO2003054257A1/en active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0286310A1 (en) * | 1987-03-30 | 1988-10-12 | Crystallume | Fluidized bed diamond particle growth |
US4859493A (en) * | 1987-03-31 | 1989-08-22 | Lemelson Jerome H | Methods of forming synthetic diamond coatings on particles using microwaves |
JPH01157497A (en) * | 1987-12-14 | 1989-06-20 | Natl Inst For Res In Inorg Mater | Production of granular diamond |
GB2219578A (en) * | 1988-06-09 | 1989-12-13 | Toshiba Kk | Manufacturing single-crystal diamond particles |
EP0368490A1 (en) * | 1988-10-20 | 1990-05-16 | Sumitomo Electric Industries, Ltd. | A process for the synthesis of granular diamond |
US5087434A (en) * | 1989-04-21 | 1992-02-11 | The Pennsylvania Research Corporation | Synthesis of diamond powders in the gas phase |
EP0407894A2 (en) * | 1989-07-13 | 1991-01-16 | Mitsubishi Denki Kabushiki Kaisha | Electrostatic levitation furnace |
US6238512B1 (en) * | 1998-01-22 | 2001-05-29 | Hitachi Kokusai Electric Inc. | Plasma generation apparatus |
Non-Patent Citations (3)
Title |
---|
ISHIKAWA ET AL: "A diagnostic study of plasma CVD under microgravity and its application to diamond deposition", ADV. SPACE RES., vol. 24, no. 10, 1999, pages 1219 - 1223, XP008003663 * |
KATO K ET AL: "ELECTRON TEMPERATURE CONTROL BY VARYING SIZE OF SLITS MADE IN A GRID", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 76, no. 5, 31 January 2000 (2000-01-31), pages 547 - 549, XP000934646, ISSN: 0003-6951 * |
PATENT ABSTRACTS OF JAPAN vol. 013, no. 419 (C - 637) 18 September 1989 (1989-09-18) * |
Also Published As
Publication number | Publication date |
---|---|
EP1456436B1 (en) | 2007-05-16 |
DE60220183T2 (en) | 2008-02-21 |
AU2002342921A1 (en) | 2003-07-09 |
DE60220183D1 (en) | 2007-06-28 |
EP1321545A1 (en) | 2003-06-25 |
RU2312175C2 (en) | 2007-12-10 |
RU2004122127A (en) | 2005-03-20 |
EP1456436A1 (en) | 2004-09-15 |
US20050147765A1 (en) | 2005-07-07 |
ATE362557T1 (en) | 2007-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5368897A (en) | Method for arc discharge plasma vapor deposition of diamond | |
US20130189446A1 (en) | Low pressure high frequency pulsed plasma reactor for producing nanoparticles | |
KR20030028296A (en) | Plasma enhanced chemical vapor deposition apparatus and method of producing a cabon nanotube using the same | |
WO1996033507A1 (en) | Diamond thin film electron emitter | |
JPH0288497A (en) | Production of single crystal diamond grain | |
US9067797B2 (en) | Methods and systems to produce large particle diamonds | |
EP1456436B1 (en) | Method for producing particles with diamond structure | |
US20060118043A1 (en) | Method for producing coated workpieces, uses and installation for the method | |
KR101717751B1 (en) | Method and apparatus for depositing nanostructured thin layers with controlled morphology and nanostructure | |
US20040250764A1 (en) | Method and apparatus for production of high purity silicon | |
Lee et al. | Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive column | |
RU2032765C1 (en) | Method of diamond coating application from vapor phase and a device for it realization | |
WO1996026306A1 (en) | Process of diamond growth from c¿70? | |
Wang et al. | Carbon fractals grown from carbon nanotips by plasma-enhanced hot filament chemical vapor deposition | |
US20040038409A1 (en) | Breath-alcohol measuring instrument | |
US20220084793A1 (en) | System for growth of one or more crystalline materials | |
US5824368A (en) | Process of diamond growth from C70 | |
McCauley et al. | Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors | |
RU214891U1 (en) | DEVICE FOR GAS-JET DEPOSITION OF DIAMOND COATINGS | |
RU2792526C1 (en) | Diamond coating device | |
US20200354854A1 (en) | Method of producing particle-shaped diamond single-crystal using chemical vapor deposition | |
JPS6330397A (en) | Method for synthesizing diamond | |
JPS63169387A (en) | Formation of thin film | |
JPS63169386A (en) | Formation of thin film | |
Moskovits et al. | Process of diamond growth from C 70 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2002779571 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004122127 Country of ref document: RU |
|
WWP | Wipo information: published in national office |
Ref document number: 2002779571 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10499260 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |
|
WWG | Wipo information: grant in national office |
Ref document number: 2002779571 Country of ref document: EP |