WO2003038862A2 - Pads for cmp and polishing substrates - Google Patents
Pads for cmp and polishing substrates Download PDFInfo
- Publication number
- WO2003038862A2 WO2003038862A2 PCT/US2002/034617 US0234617W WO03038862A2 WO 2003038862 A2 WO2003038862 A2 WO 2003038862A2 US 0234617 W US0234617 W US 0234617W WO 03038862 A2 WO03038862 A2 WO 03038862A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pad
- resin
- grams per
- per cubic
- fibers
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
Definitions
- This invention relates to pads for applications such as chemical mechanical planarization (CMP) and polishing of substrates such as semiconductor substrates, wafers, metallurgical samples, memory disk surfaces, optical components, lenses, and wafer masks. More particularly, the present invention relates to CMP pads and pads for polishing and methods of manufacturing pads having improved properties for fabrication of electronic devices.
- CMP chemical mechanical planarization
- Integrated circuits are chemically and physically integrated into a substrate by patterning regions in the substrate and layers on the substrate. To achieve high yields, it is usually necessary to recreate a substantially flat substrate after processing steps that leave topographic features on the surface of the wafer, features such as surface irregularities, bumps, troughs, and trenches.
- polishing pads have been developed in efforts to meet the needs of CMP processes and polishing processes.
- PCT application W096/15887 the specification of which is incorporated herein by reference.
- Other representative examples of polishing pads are described in U.S. patents 4,728,552, 4,841,680, 4,927,432, 4,954,141, 5,020,283, 5,197,999, 5,212,910, 5,297,364, 5,394,655 and 5,489,233, the specifications of which are also each incorporated herein in their entirety by reference.
- polishing pads are in extensive use, a need remains for improved polishing pads which provide effective planarization across electronic device substrates and have improved polishing efficiency, increased removal rates, improved uniformity across the substrate, and longer pad life for lower cost of ownership.
- new pads that can tolerate the higher temperatures that are needed for advanced CMP processes.
- new pads that possess some of the best properties of different types of pads so that the overall performance of the pad is better than that of the standard technology pads.
- This invention pertains to improve pads for applications such as polishing substrates and CMP of substrates and related methods.
- the present invention seeks to overcome one or more of the deficiencies of the standard technologies for polishing and/or planarizing substrates.
- the pad is substantially hard and has a substantially open pore structure.
- the pore structure is sufficient for transporting a fluid such as polishing slurry at a rate that is effective for CMP or polishing.
- the pore structure is substantially homogeneous throughout the pad.
- FIG. 1 is a SEM photograph of a pad according to an embodiment of the present invention.
- FIG. 2 is a SEM photograph of a standard technology hard pad.
- FIG. 3 is a SEM photograph of a standard technology semi soft pad.
- FIG. 4 is a graph showing planarization data for a pad according to an embodiment of the present invention and data for a standard technology pad.
- FIG. 5 is a graph showing copper planarization efficiency for a pad according to an embodiment of the present invention.
- FIG. 6 is a graph showing polishing results using a pad according to an embodiment of the present invention.
- embodiments of the present invention will be discussed below, primarily, in the context of chemical mechanical planarization. However, it is to be understood that embodiments in accordance with the present invention may be used for general applications of substrate polishing such as grinding, lapping, shaping and polishing of semiconductor substrates, wafers, metallurgical samples, memory disk surfaces, optical components, lenses, and wafer masks.
- substrate polishing such as grinding, lapping, shaping and polishing of semiconductor substrates, wafers, metallurgical samples, memory disk surfaces, optical components, lenses, and wafer masks.
- An embodiment of the present invention is an improved polishing pad for removing material from a substantially solid surface. More particularly, one embodiment of the present invention is a polishing pad for applications such as chemical mechanical planarization such as that used as part of integrated circuit manufacturing processes. Another embodiment of the present invention includes methods for performing chemical mechanical planarization. Still another embodiment of the present invention includes methods for fabricating polishing pads.
- Embodiments of the present invention include an improved polishing pad for applications such as chemical mechanical planarization.
- One embodiment of the present invention is a pad for chemical mechanical planarization of substrates for electronic device fabrication; the pad is substantially hard and the pad has a substantially homogeneous pore structure sufficient for transporting amounts of CMP slurry effective for CMP processing.
- the pad includes a multiplicity of fibers and a polymer resin.
- the fibers are arranged so as to form a non-woven mass such as a felt.
- the polymer resin is applied so as to impregnate the fibers and, consequently, form the pad.
- the resulting pad has properties of the standard technology porous pads and properties of the standard technology hard pads.
- embodiments of the present invention are substantially porous and substantially hard so that the pads have one or more of the beneficial CMP characteristics of standard technology porous pads and standard technology hard pads.
- pads according to embodiments of the present invention are harder than the standard technology porous pads and more porous than the standard technology hard pads.
- Some examples of methods that can be used for producing a mass of nonwoven fibers are needle punching methods and hydro-entanglement methods.
- the needle punching methods can be used to produce a needle-punched felt.
- the hydro- entanglement methods can be used to produce a hydro-entangled felt.
- some embodiments of the present invention may include a mass of woven fibers.
- the woven fibers can be produced using any suitable techniques. Some fiber weaving techniques are well known in the art.
- the woven fibers are impregnated with a resin to produce pads according to embodiments of the present invention.
- Some embodiments of the present invention have a Shore D hardness from about 45 to about 65 and all subranges subsumed therein.
- a preferred embodiment has a Shore D hardness from about 47 to about 57 and all subranges subsumed therein.
- a more preferred embodiment has a Shore D hardness from about 51 to about 54.
- Pads according to embodiments of the present invention have porosities that are higher than that for standard technology hard pads and lower than that for standard technology soft pads.
- the porosity of the pad is related to the density of the pad. Generally, a high porosity corresponds to a low-density and vice versa.
- pads according to the present invention have densities equal to or greater than about 0.5 grams per cubic centimeter. In one embodiment, the pads have a density in the range of about 0.5 grams per cubic centimeter to about 0.7 grams per cubic centimeter. For one application, a preferred embodiment of the pad has a density of about 0.58 +/- 0.04 grams per cubic centimeter. In another embodiment of the present invention, the pad has a density of about 1.05 grams per cubic centimeter.
- Embodiments of the present invention may have densities from about 0.5 grams per cubic centimeter to about 1.05 grams per cubic centimeter and all values subsumed therein.
- the high-density is preferable for embodiments of the present invention, provided the porosity of the pad is sufficient for transporting slurry.
- the pad it is preferable for the pad to be capable of transporting amounts of a fluid such as amounts of slurry, amounts of polishing fluid, and amounts of planarization fluid that may be required for a polishing process or a CMP process for which the pad is being used.
- the air permeability of a pad for polishing or CMP can be considered an indication of the porosity and the pore structure. Specifically, air permeability is determined by pad properties such as the pore size, porosity, and amount of open pore structure. Some embodiments of the present invention have air permeabilities greater than or equal to about 20 (cubic centimeters)/((square centimeter)(minute)). One of the preferred embodiments of the present invention has air permeabilities in the range of about 24 to about 34 (cubic centimeters)/((square centimeter)(minute)) and all subranges subsumed therein.
- some embodiments of the present invention have pore sizes in the range from about 5 micrometers to about 150 micrometers, and all ranges subsumed therein.
- the pore structure is substantially homogeneous throughout the pad.
- a wide range of polymer resins may be used in embodiments of the present invention.
- Suitable resins include resins such as, for example, polyvinylchloride, polyvinylfluoride, nylons, fluorocarbons, polycarbonate, polyester, polyacrylate, polyether, polyethylene, polyamide, polyurethane, polystyrene, polypropylene, polymemylmethacrylate,polysulfbne, ethylene copolymer, polyether sulfone, polyether imide, polyethylene imine, polyketone and copolymers and mixtures thereof.
- the selection of the resin will depend upon the desired properties of the pad.
- Preferred embodiments of the present invention include resins that have high hardness values.
- the hardness of the resin is higher than that of resins that are typically used for resin impregnated felt pads according to the standard technology.
- Typical resins are commercially available from a number of vendors.
- the hardness of the resin is related to the modulus of the resin.
- the modulus provides a measure of the tensile strength of the resin.
- One embodiment of the present invention has a modulus of about 300 kg/cm to about 400 kg/cm.
- a preferred embodiment of the present invention uses a polyurethane resin having a modulus of about 350 kg/cm.
- one of the standard technology porous pads uses a polyurethane resin having a modulus of about 200 kg/cm.
- the polishing pad includes non- woven fibers comprising polyester and a polymer resin comprising polyurethane. Desirable properties for polishing pads according to embodiments of the present invention can be produced using polyester fibers having a denier of about 2. Those skilled in the art know that embodiments of the present invention can also be made using other deniers, such as for example, deniers in the range of about 1.5 to about 3.0.
- a variety of fibers can be used in embodiments of the present invention.
- suitable fibers are synthetically manufactured fibers such as fibers that are commonly used in the pads for applications such as polishing and chemical mechanical planarization.
- Specific examples of suitable fibers are polyester fibers, polyurethane fibers, and nylon fibers.
- Embodiments of the present invention may also used naturally occurring fibers such as wool or other natural fibers.
- Desirable properties for polishing pads according to embodiments of the present invention can be incorporated into the polishing pads by increasing the ratio of fiber to polymer resin in the polishing pad.
- the ratio of polyester fiber to polyurethane resin is in the range of from about 50:50 to about 65:35, and all ratios and ratio ranges subsumed therein.
- the polyester makes up from about 50% to about 65% and subranges subsumed therein.
- the polyurethane resin makes up from about 50% to about 35% and subranges subsumed therein.
- the ratio of polyester fiber to polyurethane resin is in the range of from about 35:65 to about 65:35, and all ratios and ratio ranges subsumed therein.
- Preferred embodiments of the present invention for some applications have ratios of polyester to polyurethane of about 55:45. It is to be understood that embodiments of the present invention are not limited to polyester fibers and polyurethane resin. Similarly, the ratios of fiber to resin will applied to other combinations of fibers and resins for some embodiments of the present invention.
- the traditional thinking among those skilled in the art is that pad hardness increases with an increase in the resin content.
- some embodiments of the present invention show higher hardness with an increase in the fiber content.
- the ratio of felt to resin is higher in some embodiments of the present invention than that found in the standard technology pads.
- embodiments of the present invention have higher ratios of polyester fiber to polyurethane than is typically thought desirable for good pad characteristics.
- the pad includes a non- woven felt and a polymer resin.
- the felt is impregnated with the resin so that the pad has a Shore D hardness from about 45 to about 65, a density in the range of about 0.5 grams per cubic centimeter to about 0.7 grams per cubic centimeter, and a compressive modulus greater than about 70%.
- the pad includes a non-woven felt having a density of about 0.29 to about 0.35 grams per cubic centimeter and a polymer resin.
- the felt is impregnated with the resin so that the pad has a Shore D hardness from about 47 to about 57, a density in the range of about 0.5 grams per cubic centimeter to about 0.7 grams per cubic centimeter, and a compressive modulus greater than about 70%.
- Table 1 summarizes several physical properties of some embodiments of polishing pads according to the present invention. TABLE 1
- the performance of pads according to the present invention has been found to be better than that of standard hard pads. Specifically, using pads according to the present invention have been shown to result in defectivities of about 5 to about 10 for wafers of 200 mm diameter for defects >0.2 micrometers measured on a Tencor® 6420. However, the typical performance for a standard hard pad results in a defectivity of about 20 or greater, under substantially the same process conditions.
- Figure 1 a photograph taken by SEM of a pad according to an embodiment of the present invention.
- the pad includes a polyester fiber felt impregnated with a polyurethane resin.
- Figure 1 shows a surface and side section view of the pad at a magnification of about 100X; the open pore structure can be seen in the photograph.
- the pad shown in Figure 1 has a Shore D hardness of about 51 to about 54, a density of about 0.59 grams per cubic centimeter, a compressibility of about 1.8 percent, and a rebound of about 85 percent.
- Figure 2 wherein there is shown a photograph taken by SEM of the standard technology hard pad made of polyurethane.
- Figure 2 shows the surface of the standard technology hard pad at a magnification of about 100X.
- the SEM photograph shows that the standard technology hard pad has less pore structure than the embodiment of the present invention shown in Figure 1.
- the standard technology hard pad shown in Figure 2 has a Shore D hardness of about 52-62, a density of 0.75 grams per cubic centimeter, a compressibility of 2.1 percent, and a rebound of about 73 percent.
- the pad shown in Figure 2 does not include a felt.
- pads according to the present invention have some properties that are intermediate to those of standard technology semi soft pads and standard technology hard pads.
- the hardness of pads according to embodiments of the present invention is intermediate to that for the standard technology semi soft pad and the standard technology hard pad.
- the performance of pads according to the present invention is, in some ways, superior to those of the semi soft standard technology pads and the standard technology hard pads.
- Table 2 shows process conditions and results from CMP processes for tungsten using pads according to embodiments of the present invention.
- the CMP process was performed with a standard commercially available slurry, EKC 3550 W slurry.
- Embodiments of the present invention have another advantage over the standard technology pads in terms of erosion during processes such as CMP of tungsten damascene structures.
- Table 3 shows erosion data for pads according to the present invention and the standard technology pads. In general, pads according to present invention produced less erosion of the oxide during the planarization of tungsten damascene structures.
- Embodiment Of Present 400 420 480 650
- the planarization capabilities of pads according to the present invention have been measured. In addition, similar measurements have been performed for the standard technology pads.
- Some of the experimental results are presented in Figure 4.
- the results in Figure 4 are for an oxide planarization process.
- the x-axis represents the amount, in Angstroms, of oxide removed; the y-axis represents the remaining step height in Angstroms.
- These results are for features of 100 micrometer lines and spaces and were obtained using a down force of 4.5 psi.
- the points resented by diamonds, connected by the solid line are data for a pad according to an embodiment of the present invention.
- the pad according to the present invention had lower remaining step height for the amount of oxide removed. In other words, the pad according to the present invention is more efficient than the standard technology pad in terms of producing a planar surface.
- the pad according to the present invention included a polyester felt impregnated with a polyurethane resin; the pad had a Shore D hardness of about 5 l to about"54, a density of about 0.59 grams per cubic centimeter, a compressibility of about 1.8 percent, and a rebound of about 85 percent. Planarization capabilities of pads according to the present invention were also measured for copper planarization. Fig.
- the pad according to the present invention included a polyester felt impregnated with a polyurethane resin; the pad had a Shore D hardness of about 51 to about 54, a density of about 0.59 grams per cubic centimeter, a compressibility of about 1.8 percent, and a rebound of about 85 percent.
- the process data are for a tungsten CMP process using a commercially available slurry, EKC 3550 W slurry.
- the x-axis represents the wafer number.
- the y-axis represents either removal rate in angstroms per minute, non-uniformity in percent, or defectivity.
- the closed diamonds represent tungsten removal rates, WRR.
- WRR tungsten removal rates
- the triangles represent removal rates for titanium, TiRR.
- the open diamonds represent data points for tungsten removal nonuniformities, WNU.
- the tungsten non-uniformity for this set of experiments have values less than about 10% and in some instances less than or equal to about 5%.
- the measured defectivities, shown as solid ovals, for this set of experiments are in the range of about 5 to about 10 for wafers having diameters of 200 mm.
- the pad according to the present invention included a polyester felt impregnated with a polyurethane resin; the pad had a Shore D hardness of about 51 to about 54, a density of about 0.59 grams per cubic centimeter, a compressibility of about 1.8 percent, and a rebound of about 85 percent.
- Another advantage of embodiments of the present invention is that the pads are particularly suitable for some of the more advanced CMP processes where higher polishing speeds are required. This improvement, seen in some embodiments of the present invention, is believed to result from the greater stability, such as thermal stability, of the pads according to the present invention.
- Pads made according to embodiments of the present invention have been shown to have superior performance compared to that of standard technology pads for several planarization test.
- Pads according to embodiments of the present invention have, in general, 20 to 25% higher removal rates with the exact same process parameters as solid polyurethane pads, i.e., standard technology hard pads.
- Pads according to embodiments of the present invention have, in general, a factor of about 2 times to about 10 times lower detectivity than for the standard technology hard pads.
- Pads according to embodiments of the present invention have, in general, 40% lower slurry use requirement for maintaining a removal rate that is insensitive to slurry flow.
- Pads according to embodiments of the present invention in general, have a long operating life for the pad, typically, about 2 times to about three times that of the standard technology hard pads. Pads according to embodiments of the present invention, in general, require less diamond pad conditioning between each wafer than is required for standard technology hard pads. The required down force is lower for embodiments of the present invention and only one or two sweeps between wafers may be need. Whereas, for standard technology hard pads, the pad conditioners wear out much more quickly than for pads according to embodiments of the present invention. Pads according to embodiments of the present invention, in general, have lower oxide erosion than the standard technology hard pads.
- pads according to the present invention are capable of providing satisfactory polishing characteristics in addition to having substantially longer lifetimes.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
- Nonwoven Fabrics (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002342182A AU2002342182A1 (en) | 2001-10-29 | 2002-10-29 | Pads for cmp and polishing substrates |
EP02776348A EP1465753A2 (en) | 2001-10-29 | 2002-10-29 | Pads for cmp and polishing substrates |
JP2003541020A JP2005518286A (en) | 2001-10-29 | 2002-10-29 | CMP and substrate polishing pad |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34081901P | 2001-10-29 | 2001-10-29 | |
US60/340,819 | 2001-10-29 | ||
US10/020,082 | 2001-12-11 | ||
US10/020,082 US20030100250A1 (en) | 2001-10-29 | 2001-12-11 | Pads for CMP and polishing substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003038862A2 true WO2003038862A2 (en) | 2003-05-08 |
WO2003038862A3 WO2003038862A3 (en) | 2004-03-11 |
Family
ID=26692987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/034617 WO2003038862A2 (en) | 2001-10-29 | 2002-10-29 | Pads for cmp and polishing substrates |
Country Status (6)
Country | Link |
---|---|
US (1) | US20030100250A1 (en) |
EP (1) | EP1465753A2 (en) |
JP (1) | JP2005518286A (en) |
KR (1) | KR20050040838A (en) |
AU (1) | AU2002342182A1 (en) |
WO (1) | WO2003038862A2 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
AU2004225931A1 (en) | 2003-03-25 | 2004-10-14 | Neopad Technologies Corporation | Chip customized polish pads for chemical mechanical planarization (CMP) |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7086932B2 (en) * | 2004-05-11 | 2006-08-08 | Freudenberg Nonwovens | Polishing pad |
US20070087177A1 (en) * | 2003-10-09 | 2007-04-19 | Guangwei Wu | Stacked pad and method of use |
TWI385050B (en) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | Customized polishing pads for cmp and methods of fabrication and use thereof |
US20070049169A1 (en) * | 2005-08-02 | 2007-03-01 | Vaidya Neha P | Nonwoven polishing pads for chemical mechanical polishing |
KR100723959B1 (en) * | 2006-08-29 | 2007-06-04 | 주식회사 디스텍 | Chemical mechanical polishing pad using bast fiber as a major material and method for manufacturing thereof |
WO2008093850A1 (en) * | 2007-02-01 | 2008-08-07 | Kuraray Co., Ltd. | Polishing pad and process for production of polishing pad |
US20110171890A1 (en) | 2008-08-08 | 2011-07-14 | Kuraray Co., Ltd. | Polishing pad and method for manufacturing the polishing pad |
EP2957672B1 (en) | 2013-02-12 | 2018-05-02 | Kuraray Co., Ltd. | Hard sheet and method for producing the same |
KR102129665B1 (en) | 2018-07-26 | 2020-07-02 | 에스케이씨 주식회사 | Polishing pad, preparation method thereof, and polishing method applying of the same |
JP7370342B2 (en) | 2018-12-27 | 2023-10-27 | 株式会社クラレ | polishing pad |
US11628535B2 (en) | 2019-09-26 | 2023-04-18 | Skc Solmics Co., Ltd. | Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4841680A (en) * | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
US4927432A (en) * | 1986-03-25 | 1990-05-22 | Rodel, Inc. | Pad material for grinding, lapping and polishing |
US4954141A (en) * | 1988-01-28 | 1990-09-04 | Showa Denko Kabushiki Kaisha | Polishing pad for semiconductor wafers |
US5197999A (en) * | 1991-09-30 | 1993-03-30 | National Semiconductor Corporation | Polishing pad for planarization |
US5212910A (en) * | 1991-07-09 | 1993-05-25 | Intel Corporation | Composite polishing pad for semiconductor process |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US6095902A (en) * | 1998-09-23 | 2000-08-01 | Rodel Holdings, Inc. | Polyether-polyester polyurethane polishing pads and related methods |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4728552A (en) * | 1984-07-06 | 1988-03-01 | Rodel, Inc. | Substrate containing fibers of predetermined orientation and process of making the same |
US5020283A (en) * | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5232875A (en) * | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5394655A (en) * | 1993-08-31 | 1995-03-07 | Texas Instruments Incorporated | Semiconductor polishing pad |
US6017265A (en) * | 1995-06-07 | 2000-01-25 | Rodel, Inc. | Methods for using polishing pads |
US6099954A (en) * | 1995-04-24 | 2000-08-08 | Rodel Holdings, Inc. | Polishing material and method of polishing a surface |
US6022268A (en) * | 1998-04-03 | 2000-02-08 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
US6126532A (en) * | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
US6712681B1 (en) * | 2000-06-23 | 2004-03-30 | International Business Machines Corporation | Polishing pads with polymer filled fibrous web, and methods for fabricating and using same |
-
2001
- 2001-12-11 US US10/020,082 patent/US20030100250A1/en not_active Abandoned
-
2002
- 2002-10-29 EP EP02776348A patent/EP1465753A2/en not_active Withdrawn
- 2002-10-29 WO PCT/US2002/034617 patent/WO2003038862A2/en not_active Application Discontinuation
- 2002-10-29 JP JP2003541020A patent/JP2005518286A/en active Pending
- 2002-10-29 AU AU2002342182A patent/AU2002342182A1/en not_active Abandoned
- 2002-10-29 KR KR1020047006435A patent/KR20050040838A/en not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4927432A (en) * | 1986-03-25 | 1990-05-22 | Rodel, Inc. | Pad material for grinding, lapping and polishing |
US4841680A (en) * | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
US4954141A (en) * | 1988-01-28 | 1990-09-04 | Showa Denko Kabushiki Kaisha | Polishing pad for semiconductor wafers |
US5212910A (en) * | 1991-07-09 | 1993-05-25 | Intel Corporation | Composite polishing pad for semiconductor process |
US5197999A (en) * | 1991-09-30 | 1993-03-30 | National Semiconductor Corporation | Polishing pad for planarization |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US6095902A (en) * | 1998-09-23 | 2000-08-01 | Rodel Holdings, Inc. | Polyether-polyester polyurethane polishing pads and related methods |
Also Published As
Publication number | Publication date |
---|---|
AU2002342182A1 (en) | 2003-05-12 |
EP1465753A2 (en) | 2004-10-13 |
US20030100250A1 (en) | 2003-05-29 |
KR20050040838A (en) | 2005-05-03 |
WO2003038862A3 (en) | 2004-03-11 |
JP2005518286A (en) | 2005-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW425331B (en) | Polishing pads for a semiconductor substrate | |
WO2003038862A2 (en) | Pads for cmp and polishing substrates | |
EP1011922B1 (en) | Polishing pad for a semiconductor substrate | |
US6117000A (en) | Polishing pad for a semiconductor substrate | |
JP5149243B2 (en) | Microporous polishing pad | |
US7086932B2 (en) | Polishing pad | |
KR101587808B1 (en) | Chemical-Mechanical Planarization pad including patterned structural domains | |
US7118461B2 (en) | Smooth pads for CMP and polishing substrates | |
US20140206268A1 (en) | Polishing pad having polishing surface with continuous protrusions | |
JP2017071053A (en) | Polishing pad having polishing surface with continuous protrusions having tapered sidewalls | |
EP1118432A2 (en) | Substrate polishing pad | |
WO2003002299A2 (en) | Carrier head with porose retainer ring | |
WO2003037565A2 (en) | Polishing pads and manufacturing methods | |
JP2004358588A (en) | Abrasive pad and its manufacturing method | |
JP4356056B2 (en) | Resin impregnated body, polishing pad, polishing apparatus and polishing method using the polishing pad | |
WO2005035194A2 (en) | Stacked pad and method of use | |
JP2024125175A (en) | Polishing pad and wafer polishing method | |
JP2007319981A (en) | Polishing pad |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VC VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003541020 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020047006435 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002776348 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2002776348 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2002776348 Country of ref document: EP |