WO2003036766A3 - Appareil laser - Google Patents

Appareil laser Download PDF

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Publication number
WO2003036766A3
WO2003036766A3 PCT/EP2002/011731 EP0211731W WO03036766A3 WO 2003036766 A3 WO2003036766 A3 WO 2003036766A3 EP 0211731 W EP0211731 W EP 0211731W WO 03036766 A3 WO03036766 A3 WO 03036766A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
combined
feedback
laser
lobe
Prior art date
Application number
PCT/EP2002/011731
Other languages
English (en)
Other versions
WO2003036766A2 (fr
Inventor
Christian Pedersen
Peter Tidemand-Lictenberg
Weidong Sheng
Original Assignee
Torsana Laser Technologies As
Christian Pedersen
Peter Tidemand-Lictenberg
Weidong Sheng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Torsana Laser Technologies As, Christian Pedersen, Peter Tidemand-Lictenberg, Weidong Sheng filed Critical Torsana Laser Technologies As
Priority to AU2002350581A priority Critical patent/AU2002350581A1/en
Publication of WO2003036766A2 publication Critical patent/WO2003036766A2/fr
Publication of WO2003036766A3 publication Critical patent/WO2003036766A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H01S3/0805—Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un ensemble (31) laser comprenant une pluralité de dispositifs (30) laser éloignés les uns des autres. Un dispositif de rétroaction (40) de la lumière forme une cavité externe résonnante avec l'ensemble (31) laser. Un dispositif dispersif (36) est placé de manière qu'il reçoivent de la lumière provenant de l'ensemble (31) laser et qu'il transmette ou réfléchisse la lumière au dispositif de rétroaction (40). Un dispositif d'imagerie (32, 35) image des faisceaux (33) primaires provenant des dispositifs (30) laser au niveau du dispositif dispersif (36) pour former un diagramme de distribution d'intensité combiné comportant de multiples lobes (46A, 46B) combinés correspondant au multiples lobes des faisceaux (33) primaires individuels, chacun des faisceaux de lumière primaires contribuant à chacun des lobes de champ lointain combinés du diagramme de distribution d'intensité combiné par la lumière provenant d'un lobe de champ lointain correspondant de ce faisceau de lumière primaire. Chaque dispositif (30) laser émet une lumière laser à une fréquence différente, de sorte que sa lumière soit orientée par le dispositif dispersif (36) selon une orientation préférée du dispositif de rétroaction (40) de la lumière afin d'obtenir un maximum de rétroaction. Les faisceaux primaires sont combinés pour former au moins un faisceau (37) à rétroaction combiné renvoyé à l'ensemble (31) laser et au moins un faisceau de sortie (38) combiné quittant l'appareil, chacun des faisceaux combinés présentant une orientation axiale commune. Ce dispositif de rétroaction (40) de lumière permet d'obtenir un coefficient de réflexion à la lumière d'un lobe hors axe du diagramme de distribution d'intensité combiné différent de celui d'un autre lobe hors axe de ce diagramme.
PCT/EP2002/011731 2001-10-23 2002-10-18 Appareil laser WO2003036766A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002350581A AU2002350581A1 (en) 2001-10-23 2002-10-18 Laser apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33050901P 2001-10-23 2001-10-23
US60/330,509 2001-10-23

Publications (2)

Publication Number Publication Date
WO2003036766A2 WO2003036766A2 (fr) 2003-05-01
WO2003036766A3 true WO2003036766A3 (fr) 2003-10-23

Family

ID=23290076

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/011731 WO2003036766A2 (fr) 2001-10-23 2002-10-18 Appareil laser

Country Status (2)

Country Link
AU (1) AU2002350581A1 (fr)
WO (1) WO2003036766A2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003079058A2 (fr) 2002-03-15 2003-09-25 Pd-Ld, Inc. Appareils a fibres optiques comportant des elements a reseau de bragg de volume
US7528385B2 (en) 2002-03-15 2009-05-05 Pd-Ld, Inc. Fiber optic devices having volume Bragg grating elements
EP1649564A4 (fr) 2003-07-03 2007-09-05 Pd Ld Inc Utilisation de reseaux de bragg epais pour conditionnement des caracteristiques d'emission laser
EP1671163A4 (fr) 2003-09-26 2009-10-21 Pd Ld Inc Procede de fabrication d'elements de volume de reseau de bragg
DE602005008058D1 (de) * 2004-06-16 2008-08-21 Univ Danmarks Tekniske Segmentiertes diodenlasersystem
DE102004040608B4 (de) * 2004-08-21 2006-09-07 Dilas Diodenlaser Gmbh Diodenlaser mit einer optischen Einrichtung zur Erhöhung der Strahldichte eines aus ihm austretenden Ausgangslaserstrahls
WO2006083998A2 (fr) 2005-02-03 2006-08-10 Pd-Ld, Inc. Reseaux laser a phase asservie, haute puissance
TW200644365A (en) * 2005-03-25 2006-12-16 Sumitomo Osaka Cement Co Ltd External resonance type semiconductor laser
EP1961086B1 (fr) * 2005-12-16 2009-07-01 Danmarks Tekniske Universitet Systeme laser a diode laser segmentee
US7583476B2 (en) 2006-08-22 2009-09-01 Intri-Plex Technologies, Inc. Tolerance ring for data storage with cut-out feature for mass control
US7436588B2 (en) 2006-10-05 2008-10-14 Northrop Grumman Corporation Method and system for hybrid coherent and incoherent diffractive beam combining
DE112007002367B9 (de) * 2006-10-05 2013-07-18 Northrop Grumman Corp. Verfahren und System zur diffraktiven Kombination von Strahlen durch einen DOE-Strahlformer mit passiver Phasensteuerung
US7468832B2 (en) * 2006-10-05 2008-12-23 Northrop Grumman Corporation Method and system for coherent beam combining using an integrated diffractive beam combiner and sampler
US8455157B1 (en) 2007-04-26 2013-06-04 Pd-Ld, Inc. Methods for improving performance of holographic glasses
DE102008052475A1 (de) 2008-10-20 2010-04-29 Raab, Volker, Dr. Polarisationskoppler
GB201107948D0 (en) * 2011-05-12 2011-06-22 Powerphotonic Ltd Multi-wavelength diode laser array
US9391713B2 (en) 2013-10-14 2016-07-12 Trumpf Laser Gmbh High brightness dense wavelength multiplexing laser
CN103904557A (zh) * 2014-03-25 2014-07-02 中国科学院半导体研究所 激光器合束装置和方法
CN103996967B (zh) * 2014-06-11 2018-03-06 中国科学院半导体研究所 用于高功率固体激光器提高光束质量的装置
KR20230018524A (ko) 2020-12-29 2023-02-07 모노크롬, 에스.엘. 스펙트럼 스플리터 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056087A1 (fr) * 1997-06-06 1998-12-10 Torsana A/S Systemes laser utilisant une retroaction a conjugaison de phase
US6192062B1 (en) * 1998-09-08 2001-02-20 Massachusetts Institute Of Technology Beam combining of diode laser array elements for high brightness and power

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056087A1 (fr) * 1997-06-06 1998-12-10 Torsana A/S Systemes laser utilisant une retroaction a conjugaison de phase
US6192062B1 (en) * 1998-09-08 2001-02-20 Massachusetts Institute Of Technology Beam combining of diode laser array elements for high brightness and power

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DANEU V ET AL: "SPECTRAL BEAM COMBINING OF A BROAD-STRIPE DIODE LASER ARRAY IN AN EXTERNAL CAVITY", OPTICS LETTERS, OPTICAL SOCIETY OF AMERICA, WASHINGTON, US, vol. 25, no. 6, 15 March 2000 (2000-03-15), pages 405 - 407, XP000947019, ISSN: 0146-9592 *
MACCORMACK S ET AL: "HIGH-BRIGHTNESS OUTPUT FROM A LASER-DIODE ARRAY COUPLED TO A PHASE-CONJUGATING MIRROR", OPTICS LETTERS, OPTICAL SOCIETY OF AMERICA, WASHINGTON, US, vol. 18, no. 3, 1 February 1993 (1993-02-01), pages 211 - 213, XP000336402, ISSN: 0146-9592 *

Also Published As

Publication number Publication date
WO2003036766A2 (fr) 2003-05-01
AU2002350581A1 (en) 2003-05-06

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