WO2003034493A3 - High frequency power amplifier having an integrated passive adapter - Google Patents

High frequency power amplifier having an integrated passive adapter Download PDF

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Publication number
WO2003034493A3
WO2003034493A3 PCT/EP2002/011083 EP0211083W WO03034493A3 WO 2003034493 A3 WO2003034493 A3 WO 2003034493A3 EP 0211083 W EP0211083 W EP 0211083W WO 03034493 A3 WO03034493 A3 WO 03034493A3
Authority
WO
WIPO (PCT)
Prior art keywords
power amplifier
integrated passive
high frequency
frequency power
amplifier circuit
Prior art date
Application number
PCT/EP2002/011083
Other languages
German (de)
French (fr)
Other versions
WO2003034493A2 (en
Inventor
Andreas Weisgerber
Original Assignee
Infineon Technologies Ag
Andreas Weisgerber
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Andreas Weisgerber filed Critical Infineon Technologies Ag
Publication of WO2003034493A2 publication Critical patent/WO2003034493A2/en
Publication of WO2003034493A3 publication Critical patent/WO2003034493A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/1901—Structure
    • H01L2924/19011—Structure including integrated passive components
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    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)

Abstract

The invention concerns a high frequency power amplifier comprising a chip (23) wherein is implanted a power amplifier circuit (22), a semiconductor substrate (24) provided with integrated passive components (26), and connection lines (28) connecting the power amplifier circuit (22) to the integrated passive components (26). The integrated passive components (26) are connected to the power amplifier circuit (22) so as to adapt input side and/or output side. The chip (23) wherein is installed the power amplifier circuit (22), and the semiconductor (24) provided with integrated passive components (26) are arranged in a standard housing (30).
PCT/EP2002/011083 2001-10-16 2002-10-02 High frequency power amplifier having an integrated passive adapter WO2003034493A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10152652.0 2001-10-16
DE10152652A DE10152652A1 (en) 2001-10-16 2001-10-16 High frequency power amplifier with integrated passive matching circuit

Publications (2)

Publication Number Publication Date
WO2003034493A2 WO2003034493A2 (en) 2003-04-24
WO2003034493A3 true WO2003034493A3 (en) 2003-09-18

Family

ID=7703666

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/011083 WO2003034493A2 (en) 2001-10-16 2002-10-02 High frequency power amplifier having an integrated passive adapter

Country Status (3)

Country Link
DE (1) DE10152652A1 (en)
TW (1) TW571512B (en)
WO (1) WO2003034493A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4083142B2 (en) * 2004-06-02 2008-04-30 富士通株式会社 Semiconductor device
JP4904601B2 (en) 2005-04-28 2012-03-28 エスティー‐エリクソン、ソシエテ、アノニム Integrated circuit assembly having a passive integrated substrate for power and ground line routing on an integrated circuit chip
US7288995B2 (en) 2005-06-15 2007-10-30 Nokia Corporation Power amplifier of a transmitter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677570A (en) * 1995-02-17 1997-10-14 Hitachi, Ltd. Semiconductor integrated circuit devices for high-speed or high frequency
EP1014443A1 (en) * 1996-09-20 2000-06-28 TDK Corporation Passive electronic parts, ic parts, and wafer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888523A (en) * 1994-09-16 1996-04-02 Hitachi Ltd Distributed constant line power amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677570A (en) * 1995-02-17 1997-10-14 Hitachi, Ltd. Semiconductor integrated circuit devices for high-speed or high frequency
EP1014443A1 (en) * 1996-09-20 2000-06-28 TDK Corporation Passive electronic parts, ic parts, and wafer

Also Published As

Publication number Publication date
DE10152652A1 (en) 2003-04-30
WO2003034493A2 (en) 2003-04-24
TW571512B (en) 2004-01-11

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