WO2003026024A3 - Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs - Google Patents

Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs Download PDF

Info

Publication number
WO2003026024A3
WO2003026024A3 PCT/US2002/029607 US0229607W WO03026024A3 WO 2003026024 A3 WO2003026024 A3 WO 2003026024A3 US 0229607 W US0229607 W US 0229607W WO 03026024 A3 WO03026024 A3 WO 03026024A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
compositions
semiconductor
defining
semiconductor structure
Prior art date
Application number
PCT/US2002/029607
Other languages
English (en)
Other versions
WO2003026024A2 (fr
Inventor
Billy J Stanbery
Original Assignee
Heliovolt Corp
Billy J Stanbery
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/957,050 external-priority patent/US6736986B2/en
Priority claimed from US09/957,121 external-priority patent/US6559372B2/en
Priority claimed from US09/957,125 external-priority patent/US6787012B2/en
Priority claimed from US09/957,132 external-priority patent/US6500733B1/en
Priority claimed from US09/957,123 external-priority patent/US6881647B2/en
Priority claimed from US09/957,207 external-priority patent/US6593213B2/en
Application filed by Heliovolt Corp, Billy J Stanbery filed Critical Heliovolt Corp
Priority to AU2002325038A priority Critical patent/AU2002325038B2/en
Priority to EP20020759721 priority patent/EP1470593A2/fr
Publication of WO2003026024A2 publication Critical patent/WO2003026024A2/fr
Publication of WO2003026024A3 publication Critical patent/WO2003026024A3/fr
Priority to ZA2004/04981A priority patent/ZA200404981B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)

Abstract

La présente invention concerne des systèmes et des procédés destinés à des compositions, des appareils et/ou des dispositifs électroniques. Une composition comprend une couche (160, 660, 730) de composition définissant une première surface et une seconde surface. Cette couche de composition (160, 660, 730) comprend une couche de collecte (170, 685) située plus près de la première surface que de la seconde. Un appareil comprend une couche d'absorption semiconductrice (730) définissant une première surface et une seconde surface et une couche d'électrodes (645, 720) couplée à la première surface de la couche d'absorption semiconductrice (160, 660, 730). Cette couche d'absorption semiconductrice (160, 660, 730) comprend une couche de collecte (170, 685) située plus près de la première surface que de la seconde. Un dispositif électronique comprend une structure semiconductrice (160, 660, 730) permettant d'absorber, cette structure (160, 660, 730) définissant une première surface et une seconde surface, et une structure d'électrodes (645, 720) conductrice couplée à la seconde surface de la structure semiconductrice (730). La structure semiconductrice (160, 660, 730) comprend une couche de collecte (170, 695) située plus près de la première surface que de la seconde.
PCT/US2002/029607 2001-09-20 2002-09-19 Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs WO2003026024A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002325038A AU2002325038B2 (en) 2001-09-20 2002-09-19 Photovoltaic devices and compositions for use therein
EP20020759721 EP1470593A2 (fr) 2001-09-20 2002-09-19 Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs
ZA2004/04981A ZA200404981B (en) 2001-09-20 2004-06-23 Photovoltaic devices and compositions for use therein

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US09/957,121 2001-09-20
US09/957,123 2001-09-20
US09/957,050 US6736986B2 (en) 2001-09-20 2001-09-20 Chemical synthesis of layers, coatings or films using surfactants
US09/957,121 US6559372B2 (en) 2001-09-20 2001-09-20 Photovoltaic devices and compositions for use therein
US09/957,125 US6787012B2 (en) 2001-09-20 2001-09-20 Apparatus for the synthesis of layers, coatings or films
US09/957,132 2001-09-20
US09/957,132 US6500733B1 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using precursor layer exerted pressure containment
US09/957,125 2001-09-20
US09/957,207 2001-09-20
US09/957,123 US6881647B2 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using templates
US09/957,207 US6593213B2 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using electrostatic fields
US09/957,050 2001-09-20

Publications (2)

Publication Number Publication Date
WO2003026024A2 WO2003026024A2 (fr) 2003-03-27
WO2003026024A3 true WO2003026024A3 (fr) 2003-12-31

Family

ID=27560353

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/US2002/029529 WO2003026022A2 (fr) 2001-09-20 2002-09-18 Synthese de couches et de revetements a l'aide d'agents tensioactifs
PCT/US2002/029684 WO2003026028A2 (fr) 2001-09-20 2002-09-18 Appareil de synthese de couches, de revetements ou de films
PCT/US2002/029701 WO2003026026A2 (fr) 2001-09-20 2002-09-18 Synthese de couches, de revetements ou de films au moyen de champs electrostatiques
PCT/US2002/029608 WO2003026025A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films au moyen d'une couche de collecte
PCT/US2002/029607 WO2003026024A2 (fr) 2001-09-20 2002-09-19 Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs
PCT/US2002/029605 WO2003026023A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films par limitation de la pression exercee sur une couche de precurseur

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/US2002/029529 WO2003026022A2 (fr) 2001-09-20 2002-09-18 Synthese de couches et de revetements a l'aide d'agents tensioactifs
PCT/US2002/029684 WO2003026028A2 (fr) 2001-09-20 2002-09-18 Appareil de synthese de couches, de revetements ou de films
PCT/US2002/029701 WO2003026026A2 (fr) 2001-09-20 2002-09-18 Synthese de couches, de revetements ou de films au moyen de champs electrostatiques
PCT/US2002/029608 WO2003026025A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films au moyen d'une couche de collecte

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2002/029605 WO2003026023A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films par limitation de la pression exercee sur une couche de precurseur

Country Status (4)

Country Link
EP (3) EP1476906A2 (fr)
AU (3) AU2002334597B2 (fr)
WO (6) WO2003026022A2 (fr)
ZA (2) ZA200404979B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9130084B2 (en) 2010-05-21 2015-09-08 Alliance for Substainable Energy, LLC Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100523290C (zh) * 2003-10-29 2009-08-05 株式会社神户制钢所 表面处理方法及装置
CA2636790C (fr) * 2006-01-12 2014-03-11 Heliovolt Corporation Procedes de fabrication de structures de domaines de phase separes de maniere reglee
US20070160763A1 (en) * 2006-01-12 2007-07-12 Stanbery Billy J Methods of making controlled segregated phase domain structures
US7767904B2 (en) 2006-01-12 2010-08-03 Heliovolt Corporation Compositions including controlled segregated phase domain structures
US8034317B2 (en) 2007-06-18 2011-10-11 Heliovolt Corporation Assemblies of anisotropic nanoparticles
DE102008014824B4 (de) 2008-03-18 2014-07-10 Leonhard Kurz Stiftung & Co. Kg Dotierfolien und deren Verwendung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477088A (en) * 1993-05-12 1995-12-19 Rockett; Angus A. Multi-phase back contacts for CIS solar cells
EP0763859A2 (fr) * 1995-09-13 1997-03-19 Matsushita Electric Industrial Co., Ltd Cellule solaire à couche mince comportant une couche d'absorption en un composé semi-conducteur de type I-III-VI(2) et son procédé de fabrication
US5626688A (en) * 1994-12-01 1997-05-06 Siemens Aktiengesellschaft Solar cell with chalcopyrite absorber layer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156720A (en) * 1989-02-02 1992-10-20 Alcan International Limited Process for producing released vapor deposited films and product produced thereby
US5248621A (en) * 1990-10-23 1993-09-28 Canon Kabushiki Kaisha Method for producing solar cell devices of crystalline material
DE4225385C2 (de) * 1992-07-31 1994-09-29 Siemens Solar Gmbh Verfahren zur kostengünstigen Herstellung einer Schicht eines ternären Verbindungshalbleiters
US5536354A (en) * 1993-04-23 1996-07-16 Canon Kabushiki Kaisha Solid phase bonding method
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
EP0989593A3 (fr) * 1998-09-25 2002-01-02 Canon Kabushiki Kaisha Dispositif et procédé de séparation de substrat, et procédé de fabrication de susbtrat
US6316332B1 (en) * 1998-11-30 2001-11-13 Lo Yu-Hwa Method for joining wafers at a low temperature and low stress
US6190453B1 (en) * 1999-07-14 2001-02-20 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5477088A (en) * 1993-05-12 1995-12-19 Rockett; Angus A. Multi-phase back contacts for CIS solar cells
US5626688A (en) * 1994-12-01 1997-05-06 Siemens Aktiengesellschaft Solar cell with chalcopyrite absorber layer
EP0763859A2 (fr) * 1995-09-13 1997-03-19 Matsushita Electric Industrial Co., Ltd Cellule solaire à couche mince comportant une couche d'absorption en un composé semi-conducteur de type I-III-VI(2) et son procédé de fabrication

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BRAUNGER D ET AL: "Influence of sodium on the growth of polycrystalline Cu(In,Ga)Se2 thin films", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, VOL. 361-362, NR. 1, PAGE(S) 161-166, ISSN: 0040-6090, XP004187463 *
STANBERY B J ET AL: "XPS studies of sodium compound formation and surface segregation in CIGS thin films", CONFERENCE RECORD OF THE 26TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997. PVSC '97. ANAHEIM, CA, SEPT. 29 - OCT. 3, 1997, IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, NEW YORK, NY: IEEE, US, PAGE(S) 499-502, ISBN: 0-7803-3767-0, XP010267834 *
STANBERY ET AL: "Role of sodium in the control of defect structures in CIS solar cells", CONFERENCE RECORD OF THE 28TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2000, 15 September 2000 (2000-09-15) - 22 September 2000 (2000-09-22), Anchorage, AK, USA, pages 440 - 445, XP002253324 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9130084B2 (en) 2010-05-21 2015-09-08 Alliance for Substainable Energy, LLC Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se

Also Published As

Publication number Publication date
WO2003026026A3 (fr) 2003-12-18
WO2003026025A2 (fr) 2003-03-27
ZA200404981B (en) 2005-09-28
EP1470594A2 (fr) 2004-10-27
AU2002325038B2 (en) 2006-03-09
WO2003026023A3 (fr) 2004-04-15
ZA200404979B (en) 2005-07-27
EP1470593A2 (fr) 2004-10-27
AU2002334597B2 (en) 2005-12-22
WO2003026022A2 (fr) 2003-03-27
WO2003026028A3 (fr) 2003-12-18
WO2003026026A2 (fr) 2003-03-27
WO2003026023A2 (fr) 2003-03-27
WO2003026024A2 (fr) 2003-03-27
AU2002326953A1 (en) 2003-04-01
WO2003026028A2 (fr) 2003-03-27
WO2003026022A3 (fr) 2003-11-20
WO2003026025A3 (fr) 2003-12-18
EP1476906A2 (fr) 2004-11-17

Similar Documents

Publication Publication Date Title
TW336348B (en) Integrated circuit having a dummy structure and method of making the same
TW337035B (en) Semiconductor device and method of manufacturing the same
HK1029662A1 (en) Semiconductor device and method for manufacturing the same circuit substrate and electronic device.
TWI268729B (en) Protected organic electronic devices and methods for making the same
EP1351293A3 (fr) Boîtier à réseau de billes pour le montage face en haut des puces à semiconducteur avec deux substrats et son procédé de fabrication
TW200620657A (en) Recessed semiconductor device
HK1095208A1 (en) Semiconductor device and method of fabricating thesame
SG145562A1 (en) Structure and method for fabricating a bond pad structure
WO2001048870A3 (fr) Interconnexion pour structures microelectroniques presentant des caracteristiques de ressort ameliorees
TW332334B (en) The semiconductor substrate and its producing method and semiconductor apparatus
EP1184419A3 (fr) Composition de résine pour sceller un élément semi-conducteur, dispositif utilisant ce semi-conducteur et structure de montage de cet élément semi-conducteur
GB2403593A (en) Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
EP1050905A3 (fr) Dispositif semiconducteur avec couche isolante
TW592386U (en) Mounting structure of semiconductor chip and semiconductor device
WO2003026024A3 (fr) Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs
TW200509390A (en) Varying carrier mobility in semiconductor devices to achieve overall design goals
CA2258731A1 (fr) Pellicule isolante pour dispositif a semiconducteur et dispositif a semiconducteur
EP1777739A3 (fr) Dispositif à semi-conducteurs et son procédé de fabrication
MY122332A (en) Semiconductor device and method of fabricating the same
MX2007003615A (es) Circuito integrado y metodo de fabricacion.
EP1947685A3 (fr) Dispositif à semi-conducteur ayant un film diélectrique en carbone ajouté à la fluorine et son procédé de fabrication
DE50212016D1 (fr)
EP0996188A3 (fr) Dispositif de circuit à micro-ondes-ondes millimétriques et son procédé de fabrication ayant un circulateur où isolateur
WO1999010929A3 (fr) Procede d'interconnexion verticale entre des dispositifs micro-electroniques a couche mince
SG129252A1 (en) Method for producing a semiconductor device and corresponding semiconductor device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BY BZ CA CH CN CO CR CU CZ DE DM DZ EC EE ES FI GB GD GE GH HR HU ID IL IN IS JP KE KG KP KR LC LK LR LS LT LU LV MA MD MG MN MW MX MZ NO NZ OM PH PL PT RU SD SE SG SI SK SL TJ TM TN TR TZ UA UG US UZ VC VN YU ZA ZM

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ UG ZM ZW AM AZ BY KG KZ RU TJ TM AT BE BG CH CY CZ DK EE ES FI FR GB GR IE IT LU MC PT SE SK TR BF BJ CF CG CI GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2002325038

Country of ref document: AU

WWE Wipo information: entry into national phase

Ref document number: 2002759721

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2002759721

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP