WO2003024876A3 - Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication - Google Patents

Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication Download PDF

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Publication number
WO2003024876A3
WO2003024876A3 PCT/US2002/029516 US0229516W WO03024876A3 WO 2003024876 A3 WO2003024876 A3 WO 2003024876A3 US 0229516 W US0229516 W US 0229516W WO 03024876 A3 WO03024876 A3 WO 03024876A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
alloy
boat
tubing
compound
Prior art date
Application number
PCT/US2002/029516
Other languages
French (fr)
Other versions
WO2003024876A2 (en
Inventor
Kiril A Pandelisev
Original Assignee
Phoenix Scient Corp
Kiril A Pandelisev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phoenix Scient Corp, Kiril A Pandelisev filed Critical Phoenix Scient Corp
Priority to AU2002327648A priority Critical patent/AU2002327648A1/en
Priority to CA002460996A priority patent/CA2460996A1/en
Publication of WO2003024876A2 publication Critical patent/WO2003024876A2/en
Publication of WO2003024876A3 publication Critical patent/WO2003024876A3/en
Priority to US10/804,152 priority patent/US20040173948A1/en
Priority to US11/689,685 priority patent/US20070172603A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2303/00—Use of resin-bonded materials as reinforcement
    • B29K2303/04—Inorganic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2503/00—Use of resin-bonded materials as filler
    • B29K2503/04—Inorganic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Process, apparatus and application of silicon/silicon alloy/silicon compound (10) comprising at least one silicon atom boat, silicon/silicon alloy/silicon compound (10) comprising at least one silicon atom made epitaxial chamber and various silicon/silicon alloy/silicon compound comprising at least one silicon atom made tubing and liners is described here. Powder pressing (12-16), plasma and non plasma powder deposition, slurry deposition and slurry casting, silicon/silicon alloy casting and directional solidification are among few methods described here. Silicon/silicon alloy (10) made articles and some of their applications in the wafer processing industry is also described.
PCT/US2002/029516 2001-09-19 2002-09-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication WO2003024876A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2002327648A AU2002327648A1 (en) 2001-09-19 2002-09-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
CA002460996A CA2460996A1 (en) 2001-09-19 2002-09-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
US10/804,152 US20040173948A1 (en) 2002-09-19 2004-03-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
US11/689,685 US20070172603A1 (en) 2001-09-19 2007-03-22 Process and Apparatus for Silicon Boat, Silicon Tubing and Other Silicon Based Member Fabrication

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US32309801P 2001-09-19 2001-09-19
US60/323,098 2001-09-19
US33671201P 2001-12-07 2001-12-07
US60/336,712 2001-12-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/804,152 Continuation US20040173948A1 (en) 2001-09-19 2004-03-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication

Publications (2)

Publication Number Publication Date
WO2003024876A2 WO2003024876A2 (en) 2003-03-27
WO2003024876A3 true WO2003024876A3 (en) 2003-05-22

Family

ID=26983771

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/029516 WO2003024876A2 (en) 2001-09-19 2002-09-19 Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication

Country Status (3)

Country Link
AU (1) AU2002327648A1 (en)
CA (1) CA2460996A1 (en)
WO (1) WO2003024876A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115029786B (en) * 2022-06-24 2024-04-30 云南北方光学科技有限公司 Processing method of infrared thin silicon window

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4707210A (en) * 1983-07-15 1987-11-17 Canon Kabushiki Kaisha Plasma CVD apparatus
US5173121A (en) * 1990-11-09 1992-12-22 The Board Of Trustees Of The University Of Little Rock Apparatus for the deposition and film formation of silicon on substrates
JPH0610080A (en) * 1992-06-25 1994-01-18 Takeshi Masumoto Manufacture of high strength alloy having fine structure
US5340516A (en) * 1989-07-28 1994-08-23 Engelhard Corporation Thermal shock and creep resistant porous mullite articles prepared from topaz and process for manufacture
US6194026B1 (en) * 1998-10-19 2001-02-27 Howmet Research Corporation Superalloy component with abrasive grit-free coating
JP2002053395A (en) * 2000-06-01 2002-02-19 Mitsui Eng & Shipbuild Co Ltd METHOD FOR PRODUCING alpha-SiC WAFER

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4707210A (en) * 1983-07-15 1987-11-17 Canon Kabushiki Kaisha Plasma CVD apparatus
US5340516A (en) * 1989-07-28 1994-08-23 Engelhard Corporation Thermal shock and creep resistant porous mullite articles prepared from topaz and process for manufacture
US5173121A (en) * 1990-11-09 1992-12-22 The Board Of Trustees Of The University Of Little Rock Apparatus for the deposition and film formation of silicon on substrates
JPH0610080A (en) * 1992-06-25 1994-01-18 Takeshi Masumoto Manufacture of high strength alloy having fine structure
US6194026B1 (en) * 1998-10-19 2001-02-27 Howmet Research Corporation Superalloy component with abrasive grit-free coating
JP2002053395A (en) * 2000-06-01 2002-02-19 Mitsui Eng & Shipbuild Co Ltd METHOD FOR PRODUCING alpha-SiC WAFER

Also Published As

Publication number Publication date
CA2460996A1 (en) 2003-03-27
WO2003024876A2 (en) 2003-03-27
AU2002327648A1 (en) 2003-04-01

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