WO2003019640A2 - Method of forming a thin layer and a contact outlet - Google Patents

Method of forming a thin layer and a contact outlet Download PDF

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Publication number
WO2003019640A2
WO2003019640A2 PCT/FR2002/002926 FR0202926W WO03019640A2 WO 2003019640 A2 WO2003019640 A2 WO 2003019640A2 FR 0202926 W FR0202926 W FR 0202926W WO 03019640 A2 WO03019640 A2 WO 03019640A2
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WIPO (PCT)
Prior art keywords
layer
thin layer
etching
thin
metal
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PCT/FR2002/002926
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French (fr)
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WO2003019640A3 (en
Inventor
Nicolas Sillon
Philippe Vasseur
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Commissariat A L'energie Atomique
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Publication of WO2003019640A2 publication Critical patent/WO2003019640A2/en
Publication of WO2003019640A3 publication Critical patent/WO2003019640A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Definitions

  • the present invention relates to a process for forming a thin layer and in particular a dielectric passivation layer.
  • Such layers generally equip the integrated semiconductor components to protect them or isolate mutually from the conductive or semiconductor zones.
  • shaping is meant the fact of giving a layer a particular pattern, by etching it locally, in order to eliminate parts thereof. This involves, for example, making openings in a thin layer to allow access to an underlying layer or substrate.
  • the invention can thus be used to advantage, for example, for making contact sockets, or electrical or mechanical interconnections on components.
  • the invention finds applications in the fields of microelectronics and micromechanics. It allows in particular to treat substrates with a strong relief.
  • Thin layers, and in particular thin layers of dielectrics, such as layers of silicon oxide or nitride, are widely used for the production of microsystems mechanical, or integrated electronic components.
  • substrates of the “silicon on insulator” type SOI-Silicon On Insulator
  • SOI-Silicon On Insulator comprise a thin layer of silicon oxide buried under a layer of silicon.
  • Layers of silicon oxide or nitride are also frequently formed on the surface of integrated components or parts of components, to ensure their electrical insulation and passivation.
  • the thin layers can be shaped using different etching techniques which aim to locally eliminate parts of these layers to give them the desired shape. Etching techniques are generally classified into two main categories which include, on the one hand, wet etching techniques and on the other hand, dry etching techniques.
  • Dry etching for example in an HF-based solution, exhibits an isotropic nature in the attack on the material of the layers.
  • Dry etching for example by reactive ions, on the other hand is generally anisotropic.
  • etching masks are commonly used.
  • the parts of the thin layer protected by the mask are preserved, while the parts where the layer is exposed, are eliminated by the effect of the etching agents.
  • the material used for the manufacture of engraving masks is generally a resin photosensitive or the like.
  • the shape of the mask is obtained by exposure of the resin (positive or negative) and then by its development. The exposure of the resin takes place through an exposure mask. This is, for example, a chrome mask on glass.
  • the resin Before exposure, the resin is spread directly on the thin layer that one wishes to shape. This can take place, conventionally, by centrifugation.
  • the substrate carrying the thin layer is placed on a centrifuge, also called a "spinner".
  • a drop of resin deposited on the thin layer spreads out in a film under the effect of rotation. It is fixed by evaporation of a solvent.
  • Document (1) proposes to deposit the resin electrolytically to reduce inhomogeneities.
  • this technique requires the formation of an electrode and involves a significant investment to guarantee satisfactory reproducibility of the process.
  • Another technique is to apply the resin by spraying. A sufficiently fluid resin is deposited on the substrate using nozzles, like paint spray guns. The homogeneity of the deposit is generally improved. However, the problem of the loss of resolution of the patterns at the bottom of the cavities, as well as that of the coverage of the edges is not resolved.
  • the object of the invention is . to propose a process for shaping a thin layer which does not have the difficulties and limitations mentioned above.
  • An object is in particular to propose a simple method making it possible to guarantee a satisfactory resolution for the formation of patterns, independently of the shape and the amplitude of the relief of the substrate supporting the layer to be treated.
  • Another aim is to eliminate the difficulties linked to the use of a resin, and in particular to its uniform spreading.
  • the subject of the invention is more precisely a process for shaping a thin layer comprising the following successive steps:
  • the qualifier "thin” layer does not refer to a particular range of thicknesses but makes it possible to distinguish between layers to be shaped and the substrates or support plates covered therewith.
  • Conformal deposition of the metal from the mask layer on the thin layer can be achieved by spraying. This technique largely avoids the imperfections associated with the deposition of a resin, such as the comets mentioned in the introductory part.
  • electrolysis carried out in full plate on the metal of the mask, can be provided to reinforce the protection of the underlying layer outside the openings.
  • the mask layer is made of a metal capable of being engraved by laser. It is, for example, a layer of gold, aluminum, their alloys or these same layers associated with an adhesion layer for example in Cr, Ti,, ... or their alloys .
  • the thickness of the mask layer is adjusted as a function of the power of the laser beam so that the application of the beam allows the local vaporization of the metal.
  • the mask layer the desired pattern which it is desired to transfer to the underlying layer, it is possible to move the point of impact of the beam on the mask layer.
  • the displacement of the point of impact can be conventional, for example manual, as for the microscope turrets.
  • the directivity of the laser beam prevents deterioration of the patterns when the relief of the treated substrate has depressions.
  • the pattern of these is transferred to the underlying thin layer by etching.
  • the etching of the underlying thin layer takes place through the openings. It is selective for the material of the thin layer, so that the parts still covered with the metal layer are preserved.
  • the invention in a particular application, also relates to a method of forming an electrical contact point on a substrate covered with a thin layer.
  • a method of forming an electrical contact point on a substrate covered with a thin layer According to this method, an opening is made locally in the thin layer and a contact layer is formed. This covers, at least locally, the thin layer and comes into contact with the substrate through the opening.
  • the opening is practiced in accordance with the shaping process described above.
  • the metal layer used as an etching mask, can be removed after the etching, and in particular before the contact layer is put in place.
  • the method can be applied to the formation of a contact on an SOI substrate of silicon on insulator type, comprising a surface layer of silicon, a first buried insulating thin layer and a support layer of silicon.
  • a well is formed through the support layer to locally expose the thin layer insulation.
  • a second layer of insulation is deposited in the well, and a contact is made on the surface layer through the well and the thin layers of insulation, according to the method indicated above.
  • FIG. 1 is a schematic section of a substrate having a thin surface layer to be shaped.
  • Figures 2 and 3 are schematic sections of the substrate of Figure 1 illustrating the formation of an etching mask.
  • FIG. 4 is a schematic section of the substrate illustrating an etching operation of the thin layer.
  • FIG. 5 is a schematic section of the substrate of Figure 4 after etching and elimination of the etching mask.
  • - Figures 6 and 7 are schematic sections of substrates shaped in accordance with the invention and illustrate possibilities of making contact. Detailed description of methods of implementing the invention.
  • Figure 1 shows a substrate having on its surface a thin layer to be shaped.
  • a thin layer of silicon oxide 12 which covers a silicon substrate 10.
  • Such a layer constitutes, for example, an electrical insulation or a passivation protection of any components formed in the substrate.
  • the thin layer 12 can also be made of silicon nitride or any other insulating material.
  • Figure 2 shows the deposition of a gold layer 14 on the thin layer 12 of silicon oxide. It is a layer used to form an etching mask. It is designated by "mask layer”.
  • Gold is deposited, for example, by spraying.
  • This metal deposition technique well known in itself, has the advantage of a uniform covering and not very sensitive to the relief of the substrates.
  • Figure 3 shows the machining of the gold layer
  • the machining takes place, according to the invention by means of a laser beam.
  • This is a beam emitted by an NdtYAG type laser.
  • the beam is symbolically represented in FIG. 3 by arrows 18.
  • the localized impact of the beam has the effect of vaporizing the metal on a circular surface of the order of 30 ⁇ m in diameter.
  • the openings made in the metal are identified by the reference 20. They are surrounded by a metal border 21 formed under the effect of the laser.
  • the displacement of the laser controlled by numerical control, makes it possible to confer on the mask layer the pattern which it is desired to transfer into the underlying thin layer.
  • the shaping of the mask layer thanks to the laser, does not exhibit any degradation in resolution due to the relief of the substrates.
  • the minimum size of the engraved patterns and their resolution is essentially dictated by the laser focus parameters.
  • the displacement of the point of impact of the laser on the metal layer is obtained by a relative movement between the substrate and the laser, or by controlled deflection of the beam.
  • the pattern made in the mask layer 14 corresponds to simple openings intended for the formation of contacts on the substrate.
  • FIG. 4 shows the etching of the thin layer 12 through the openings of the mask layer 14. In the case of the example illustrated, it is a wet etching in an HF-based solution. The etching is selective for the silicon oxide of the thin layer 12, with respect to the metal of the mask layer 14 and with respect to the silicon of the substrate 10. Thus, the mask layer preserves the thin layer of silicon oxide in the regions which it covers, and the etching takes place with stop on the underlying substrate 10. It should be noted that depending on the material of the thin layer, or underlying layers, other etching techniques, such as dry etching techniques, can also be retained. For example, anisotropic etching with reactive ions is an alternative to chemical etching.
  • the mask layer 14 can be removed by selective removal of the gold.
  • the structure shown in FIG. 5 is obtained.
  • a layer of contact metal can then be deposited and shaped to make contact points on the regions of the substrate exposed.
  • the contact metal layer is indicated in broken lines, with the reference 22. It can be used to electrically connect parts of the substrate 10 to one another, or to other components not shown.
  • FIG. 6 shows an application of the method of the invention to the production of a contact by the rear face of an SOI substrate.
  • SOI substrates silicon on insulator, have a thin surface layer of silicon 13, separated from a solid silicon substrate 10 by a buried layer 12 of silicon oxide, silicon nitride or other insulating material.
  • the "back" side is the side
  • the making of a contact includes the formation, in the substrate 10, of an opening which extends to the vicinity of the thin layer of silicon 13. It is indeed in this layer that. components and integrated circuits are generally produced. Thus, a wide opening 30 is first etched in the silicon of the support substrate 10 until reaching the buried layer of silicon oxide 12. The etching, in a KOH solution takes place with stop on the oxide of silicon.
  • a layer of silicon oxide 32 or of an insulating material is then deposited on the rear face of the substrate by lining the inside of the opening 30.
  • the layer 32 provides a electrical insulation of the support.
  • the buried oxide layer 12 is shaped so as to make a contact passage 20 there.
  • the passage 20 is produced in the manner described with reference to FIGS. 1 to 5, using a mask not shown.
  • a layer of contact metal 22 is deposited on the silicon oxide on the rear face and in the opening 30.
  • the metal layer 22 is also in electrical contact with the thin surface layer of silicon 13, on its face. facing the buried oxide layer. As shown in Figure 6, the contact metal layer 22 can also be shaped.
  • Figure 7 shows a variant of the method of making a contact in accordance with the figure

Abstract

The invention relates to a method of forming a thin layer (12) comprising the following successive steps: a layer (14) is deposited on the thin layer, said deposited layer comprising a metal which is different from the material of the thin layer and which can be etched by laser; at least one opening (20) is etched in the metal layer following a pattern that coincides with at least one part of the thin layer that is to be eliminated, said metal layer being locally subjected to a laser beam for the aforementioned etching; the underlying thin layer is etched locally following the pattern and using the metal layer as an etch resist. The invention can be used to produce contact outlets.

Description

PROCEDE DE MISE EN FORME D'UNE COUCHE MINCE ET DE FORMATION D'UNE PRISE DE CONTACT PROCESS FOR SHAPING A THIN FILM AND FORMING A CONTACT FORM
Domaine technique La présente invention concerne un procédé de mise en forme d'une couche mince et en particulier d'une couche diélectrique de passivation. De telles couches équipent généralement les composants intégrés à semi-conducteurs pour les protéger ou en isoler mutuellement des zones conductrices ou semi- conductrices .Technical Field The present invention relates to a process for forming a thin layer and in particular a dielectric passivation layer. Such layers generally equip the integrated semiconductor components to protect them or isolate mutually from the conductive or semiconductor zones.
On entend par "mise en forme" le fait de conférer à une couche un motif particulier, en la gravant localement, pour en éliminer des parties. Il s'agit, par exemple, de pratiquer des ouvertures dans une couche mince pour permettre un accès à une couche ou à un substrat sous-jacents .By "shaping" is meant the fact of giving a layer a particular pattern, by etching it locally, in order to eliminate parts thereof. This involves, for example, making openings in a thin layer to allow access to an underlying layer or substrate.
L'invention peut ainsi être mise à profit, par exemple, pour la réalisation de prises de contact, ou d'interconnexions électriques ou mécaniques sur des composants .The invention can thus be used to advantage, for example, for making contact sockets, or electrical or mechanical interconnections on components.
De façon générale, l'invention trouve des applications dans les domaines de la microélectronique et de la micromécanique. Elle permet notamment de traiter des substrats avec un fort relief.In general, the invention finds applications in the fields of microelectronics and micromechanics. It allows in particular to treat substrates with a strong relief.
Etat de la technique antérieure .State of the prior art.
Les couches minces, et en particulier les couches minces de diélectriques, telles que les couches d'oxyde ou de nitrure de silicium, sont largement utilisées pour la réalisation de micro-systèmes mécaniques, ou de composants électroniques intégrés. A titre d'exemple, les substrats de type "silicium sur isolant" (SOI-Silicon On Insulator) comportent une couche mince d'oxyde de silicium enterrée sous une couche de silicium. Des couches d'oxyde ou de nitrure de silicium sont aussi formées fréquemment à la surface de composants ou de parties de composants intégrés, pour assurer leur isolation électrique et leur passivation. La mise en forme des couches minces peut avoir lieu selon différentes techniques de gravure qui visent à éliminer localement des parties de ces couches pour leur conférer la forme souhaitée. Les techniques de gravure sont généralement classées dans deux catégories principales qui comprennent, d'une part, les techniques de gravure par voie humide et d'autre part, les techniques de gravure par voie sèche .Thin layers, and in particular thin layers of dielectrics, such as layers of silicon oxide or nitride, are widely used for the production of microsystems mechanical, or integrated electronic components. By way of example, substrates of the “silicon on insulator” type (SOI-Silicon On Insulator) comprise a thin layer of silicon oxide buried under a layer of silicon. Layers of silicon oxide or nitride are also frequently formed on the surface of integrated components or parts of components, to ensure their electrical insulation and passivation. The thin layers can be shaped using different etching techniques which aim to locally eliminate parts of these layers to give them the desired shape. Etching techniques are generally classified into two main categories which include, on the one hand, wet etching techniques and on the other hand, dry etching techniques.
La gravure humide, par exemple dans une solution à base de HF, présente un caractère isotrope dans l'attaque du matériau des couches. La gravure sèche, par exemple par ions réactifs, est en revanche généralement anisotrope.Wet etching, for example in an HF-based solution, exhibits an isotropic nature in the attack on the material of the layers. Dry etching, for example by reactive ions, on the other hand is generally anisotropic.
Pour définir les régions dans lesquelles le matériau de la couche mince doit être gravé, et les régions dans lesquelles il doit être préservé, on utilise communément des masques de gravure. Les parties de la couche mince protégée par le masque sont préservées, tandis que les parties où la couche est à nu, sont éliminées par l'effet des agents de gravure. Le matériau utilisé pour la fabrication des masques de gravure est généralement une résine photosensible ou analogue. La forme du masque est obtenue par insolation de la résine (positive ou négative) puis par son développement. L'insolation de la résine a lieu à travers un masque d'insolation. Il s'agit, par exemple, d'un masque de chrome sur verre.To define the regions in which the material of the thin layer must be etched, and the regions in which it must be preserved, etching masks are commonly used. The parts of the thin layer protected by the mask are preserved, while the parts where the layer is exposed, are eliminated by the effect of the etching agents. The material used for the manufacture of engraving masks is generally a resin photosensitive or the like. The shape of the mask is obtained by exposure of the resin (positive or negative) and then by its development. The exposure of the resin takes place through an exposure mask. This is, for example, a chrome mask on glass.
Avant l'insolation, la résine est étalée directement sur la couche mince que l'on souhaite mettre en forme. Ceci peut avoir lieu, de façon classique, par centrifugation. Le substrat portant la couche mince est disposé sur une centrifugeuse, encore appelée « tournette » . Une goutte de résine déposée sur la couche mince s'étale en un film sous l'effet de la rotation. Elle se fixe par évaporation d'un solvant.Before exposure, the resin is spread directly on the thin layer that one wishes to shape. This can take place, conventionally, by centrifugation. The substrate carrying the thin layer is placed on a centrifuge, also called a "spinner". A drop of resin deposited on the thin layer spreads out in a film under the effect of rotation. It is fixed by evaporation of a solvent.
L'étalement de la résine sur les substrats peut présenter un certain nombre de difficultés qui se traduisent essentiellement par des inhomogénéités ou "comètes". Celles-ci nuisent à l'optimisation de l' insolation.Spreading the resin on the substrates can present a certain number of difficulties which essentially result in inhomogeneities or "comets". These affect the optimization of sunshine.
On constate que l'un des facteurs contribuant fortement à la formation d' inhomogénéités est la hauteur du relief des substrats sur lesquels la résine est étalée. En particulier, la présence de protubérances ou d' arêtes se traduit par des défauts de couverture . Par ailleurs, un relief important fait que la résolution des motifs, notamment au fond de cavités, est détériorée. Ceci constitue un problème, par exemple pour la fabrication de composants MEMS, c'est-à-dire de microsystem.es électromécaniques ("Micro Electro Mechanical Systems") . Ces composants peuvent présenter des reliefs de l'ordre de quelques centaines de micromètres .It is found that one of the factors contributing strongly to the formation of inhomogeneities is the height of the relief of the substrates on which the resin is spread. In particular, the presence of protuberances or edges results in coverage defects. Furthermore, significant relief means that the resolution of the patterns, in particular at the bottom of the cavities, is deteriorated. This constitutes a problem, for example for the manufacture of MEMS components, that is to say of electromechanical microsystems ("Micro Electro Mechanical Systems"). These components can present reliefs of the order of a few hundred micrometers.
Le document (1) dont les références sont précisées à la fin de la description, propose de déposer la résine par voie électrolytique pour réduire les inhomogénéités. Cette technique nécessite toutefois la formation d'une électrode et implique un investissement important pour garantir une reproductibilité satisfaisante du procédé. Une autre technique consiste à appliquer la résine par pulvérisation. Une résine suffisamment fluide est déposée sur le substrat en utilisant des buses, à l'instar des pistolets à peinture. L'homogénéité du dépôt s'en trouve globalement améliorée. Toutefois, le problème de la perte de résolution des motifs au fond des cavités, ainsi que celui de la couverture des arêtes ne sont pas résolus .Document (1), the references of which are given at the end of the description, proposes to deposit the resin electrolytically to reduce inhomogeneities. However, this technique requires the formation of an electrode and involves a significant investment to guarantee satisfactory reproducibility of the process. Another technique is to apply the resin by spraying. A sufficiently fluid resin is deposited on the substrate using nozzles, like paint spray guns. The homogeneity of the deposit is generally improved. However, the problem of the loss of resolution of the patterns at the bottom of the cavities, as well as that of the coverage of the edges is not resolved.
Enfin, il est possible de remplacer le masque de résine par un masque sous la forme d'une plaque de silicium ou de métal, percée et collée sur la couche mince à traiter. Ces masques évitent en outre l'étape de photolithographie nécessaire à la mise en forme de la résine. Il s'avère cependant que ces masques sont inadaptés à la gravure des diélectriques par voie humide. De plus, un phénomène d'accumulation de charges électriques dans les couches diélectriques entrave l'utilisation des masques mécaniques pour la gravure par bombardement ionique .Finally, it is possible to replace the resin mask with a mask in the form of a silicon or metal plate, pierced and glued to the thin layer to be treated. These masks also avoid the photolithography step necessary for shaping the resin. However, it turns out that these masks are unsuitable for etching dielectrics by the wet process. In addition, a phenomenon of accumulation of electric charges in the dielectric layers hinders the use of mechanical masks for etching by ion bombardment.
L'état de la technique est également illustré par le document (2) dont les références sont précisées à la fin de la présente description. Exposé de l'inventionThe state of the art is also illustrated by document (2), the references of which are given at the end of this description. Statement of the invention
L'invention a pour but.de proposer un procédé de mise en forme d'une couche mince ne présentant pas les difficultés et limitations évoquées ci-dessus.The object of the invention is . to propose a process for shaping a thin layer which does not have the difficulties and limitations mentioned above.
Un but est en particulier de proposer, un procédé simple permettant de garantir une résolution satisfaisante pour la formation de motifs, indépendamment de la forme et de l'amplitude du relief du substrat supportant la couche à traiter.An object is in particular to propose a simple method making it possible to guarantee a satisfactory resolution for the formation of patterns, independently of the shape and the amplitude of the relief of the substrate supporting the layer to be treated.
Un but est encore d'éliminer les difficultés liées à l'utilisation d'une résine, et en particulier à son étalement uniforme.Another aim is to eliminate the difficulties linked to the use of a resin, and in particular to its uniform spreading.
Pour atteindre ces buts, l'invention a plus précisément pour objet un procédé de mise en forme d'une couche mince comprenant les étapes successives suivantes :To achieve these goals, the subject of the invention is more precisely a process for shaping a thin layer comprising the following successive steps:
- le dépôt sur la couche mince d'une couche en un métal différent du matériau de la couche mince, susceptible d'être gravé par laser,the deposition on the thin layer of a layer of a metal different from the material of the thin layer, capable of being etched by laser,
- la gravure dans la couche de métal d'au moins une ouverture selon un motif coïncidant avec au moins une partie de la couche mince devant être éliminée, la gravure ayant lieu par soumission locale de la couche de métal à un faisceau laser, etthe etching in the metal layer of at least one opening in a pattern coinciding with at least part of the thin layer to be eliminated, the etching taking place by local submission of the metal layer to a laser beam, and
- la gravure localisée de la couche mince sous-jacente, selon le motif, en utilisant la couche de métal comme masque de gravure .- localized etching of the underlying thin layer, depending on the pattern, using the metal layer as an etching mask.
Il convient de préciser que le qualificatif de couche "mince" ne fait pas référence à une gamme d'épaisseurs particulière mais permet de distinguer les couches devant être mises en forme et les substrats ou plaques de support qui en sont garnies.It should be noted that the qualifier "thin" layer does not refer to a particular range of thicknesses but makes it possible to distinguish between layers to be shaped and the substrates or support plates covered therewith.
Le dépôt conforme du métal de la couche de masque sur la couche mince peut être réalisé par pulvérisation. Cette technique permet d'éviter dans une large mesure les imperfections liées au dépôt d'une résine, telles que les comètes mentionnées dans la partie introductive.Conformal deposition of the metal from the mask layer on the thin layer can be achieved by spraying. This technique largely avoids the imperfections associated with the deposition of a resin, such as the comets mentioned in the introductory part.
Eventuellement, une électrolyse, effectuée en pleine plaque sur le métal du masque, peut être prévue pour renforcer la protection de la couche sous-jacente en dehors des ouvertures .Optionally, electrolysis, carried out in full plate on the metal of the mask, can be provided to reinforce the protection of the underlying layer outside the openings.
Comme indiqué ci-dessus, la couche de masque est en un métal susceptible d'être gravé par laser. Il s'agit, par exemple, d'une couche d'or, d'aluminium, de leurs alliages ou de ces mêmes couches associées à une couche d'adhérence par exemple en Cr, Ti, , ... ou de leurs alliages. L'épaisseur de la couche de masque est ajustée en fonction de la puissance du faisceau laser de façon que l'application du faisceau permette la vaporisation locale du métal .As indicated above, the mask layer is made of a metal capable of being engraved by laser. It is, for example, a layer of gold, aluminum, their alloys or these same layers associated with an adhesion layer for example in Cr, Ti,, ... or their alloys . The thickness of the mask layer is adjusted as a function of the power of the laser beam so that the application of the beam allows the local vaporization of the metal.
Pour conférer à la couche de masque le motif désiré que l'on souhaite transférer dans la couche sous-jacente, on peut effectuer un déplacement du point d'impact du faisceau sur la couche de masque. Le déplacement du point d'impact peut être classique, par exemple manuel, comme pour les tourelles de microscope.To give the mask layer the desired pattern which it is desired to transfer to the underlying layer, it is possible to move the point of impact of the beam on the mask layer. The displacement of the point of impact can be conventional, for example manual, as for the microscope turrets.
Il peut aussi être automatique comme pour les machines outils, avec pilotage par ordinateur. La directivité du faisceau laser évite la détérioration des motifs lorsque le relief du substrat traité présente des dépressions.It can also be automatic as for machine tools, with computer control. The directivity of the laser beam prevents deterioration of the patterns when the relief of the treated substrate has depressions.
Après achèvement des ouvertures dans la couche de métal, le motif de celles-ci est transféré dans la couche mince sous-jacente par gravure. La gravure de la couche mince sous-jacente a lieu à travers les ouvertures. Elle est sélective du matériau de la couche mince, de sorte que les parties encore recouvertes de la couche de métal sont préservées.After completion of the openings in the metal layer, the pattern of these is transferred to the underlying thin layer by etching. The etching of the underlying thin layer takes place through the openings. It is selective for the material of the thin layer, so that the parts still covered with the metal layer are preserved.
L'invention, dans une application particulière, concerne également un procédé de formation d'une prise de contact électrique sur un substrat recouvert d'une couche mince. Selon ce procédé, on pratique localement une ouverture dans la couche mince et on forme une couche de contact. Celle-ci recouvre, au moins localement, la couche mince et vient en contact avec le substrat à travers l'ouverture. On pratique l'ouverture conformément au procédé de mise en forme décrit précédemment.The invention, in a particular application, also relates to a method of forming an electrical contact point on a substrate covered with a thin layer. According to this method, an opening is made locally in the thin layer and a contact layer is formed. This covers, at least locally, the thin layer and comes into contact with the substrate through the opening. The opening is practiced in accordance with the shaping process described above.
La couche de métal, utilisée comme masque de gravure peut être retirée après la gravure, et notamment avant la mise en place de la couche, de contact . Le procédé peut être appliqué à la formation d'une prise de contact sur un substrat SOI de type silicium sur isolant, comprenant une couche superficielle de silicium, une première couche mince isolante enterrée et une couche de support en silicium. Dans ce cas, on forme un puits à travers la couche de support pour mettre localement à nu la couche mince d'isolant. Puis, on dépose une deuxième couche d'isolant dans le puits, et on réalise une prise de contact sur la couche superficielle à travers le puits et les couches minces d'isolant, conformément au procédé indiqué ci-dessus.The metal layer, used as an etching mask, can be removed after the etching, and in particular before the contact layer is put in place. The method can be applied to the formation of a contact on an SOI substrate of silicon on insulator type, comprising a surface layer of silicon, a first buried insulating thin layer and a support layer of silicon. In this case, a well is formed through the support layer to locally expose the thin layer insulation. Then, a second layer of insulation is deposited in the well, and a contact is made on the surface layer through the well and the thin layers of insulation, according to the method indicated above.
D'autres caractéristiques et avantages de l'invention ressortiront de la description qui va suivre, en référence aux figures des dessins annexés.Other characteristics and advantages of the invention will emerge from the description which follows, with reference to the figures of the accompanying drawings.
Cette description est donnée à titre purement illustratif et non limitatif.This description is given purely by way of non-limiting illustration.
Brève description des figures.Brief description of the figures.
- La figure 1 est une coupe schématique d'un substrat présentant une couche mince superficielle à mettre en forme .- Figure 1 is a schematic section of a substrate having a thin surface layer to be shaped.
- Les figures 2 et 3 sont des coupes schématiques du substrat de la figure 1 illustrant la formation d'un masque de gravure.- Figures 2 and 3 are schematic sections of the substrate of Figure 1 illustrating the formation of an etching mask.
- La figure 4 est une coupe schématique du substrat illustrant une opération de gravure de la couche mince.- Figure 4 is a schematic section of the substrate illustrating an etching operation of the thin layer.
- La figure 5 est une coupe schématique du substrat de la figure 4 après gravure et élimination du masque de gravure. - Les figures 6 et 7 sont des coupes schématiques de substrats mis en forme conformément à l'invention et illustrent des possibilités de réalisation de prises de contact. Description détaillée de modes de mise en œuyre de 1' invention.- Figure 5 is a schematic section of the substrate of Figure 4 after etching and elimination of the etching mask. - Figures 6 and 7 are schematic sections of substrates shaped in accordance with the invention and illustrate possibilities of making contact. Detailed description of methods of implementing the invention.
Dans la description qui suit, des parties identiques, similaires ou équivalentes des différentes figures sont repérées avec les mêmes références numériques. Par ailleurs, pour des raisons de clarté, les différentes parties des figures ne sont pas représentées selon une échelle homogène.In the following description, identical, similar or equivalent parts of the different figures are identified with the same reference numerals. Furthermore, for reasons of clarity, the different parts of the figures are not represented on a uniform scale.
La figure 1 montre un substrat présentant à sa surface une couche mince devant être mise en forme.Figure 1 shows a substrate having on its surface a thin layer to be shaped.
Il s'agit, par exemple, d'une couche mince d'oxyde de silicium 12 qui recouvre un substrat de silicium 10. Une telle couche constitue, par exemple, une isolation électrique ou une protection de passivation d'éventuels composants formés dans le substrat. La couche mince 12 peut être réalisée aussi en nitrure de silicium ou tout autre matériau isolant.It is, for example, a thin layer of silicon oxide 12 which covers a silicon substrate 10. Such a layer constitutes, for example, an electrical insulation or a passivation protection of any components formed in the substrate. The thin layer 12 can also be made of silicon nitride or any other insulating material.
La figure 2 montre le dépôt d'une couche d'or 14 sur la couche mince 12 d'oxyde de silicium. Il s'agit d'une couche servant à former un masque de gravure. Elle est désignée par "couche de masque".Figure 2 shows the deposition of a gold layer 14 on the thin layer 12 of silicon oxide. It is a layer used to form an etching mask. It is designated by "mask layer".
L'or est déposé, par exemple, par pulvérisation. Cette technique de dépôt des métaux, bien connue en soi, présente l'avantage d'un recouvrement uniforme et peu sensible au relief des substrats.Gold is deposited, for example, by spraying. This metal deposition technique, well known in itself, has the advantage of a uniform covering and not very sensitive to the relief of the substrates.
La figure 3 montre l'usinage de la couche d'orFigure 3 shows the machining of the gold layer
14 pour former le masque de gravure. L'usinage a lieu, conformément à l'invention au moyen d'un faisceau laser. Il s'agit en l'occurrence d'un faisceau émis par un laser de type NdtYAG. Le faisceau est représenté symboliquement sur la figure 3 par des flèches 18.14 to form the etching mask. The machining takes place, according to the invention by means of a laser beam. This is a beam emitted by an NdtYAG type laser. The beam is symbolically represented in FIG. 3 by arrows 18.
L'impact localisé du faisceau a pour effet de vaporiser le métal sur une surface circulaire de l'ordre de 30 μm de diamètre. Les ouvertures pratiquées dans le métal sont repérées par la référence 20. Elles sont entourées d'une bordure de métal 21 formée sous l'effet du laser. Le déplacement du laser, piloté par commande numérique, permet de conférer à la couche de masque le motif que l'on souhaite transférer dans la couche mince sous-jacente. La mise en forme de la couche de masque, grâce au laser, ne présente pas de dégradation de résolution due au relief des substrats. La dimension minimale des motifs gravés et leur résolution est dictée pour l'essentiel par les paramètres de focalisation du laser.The localized impact of the beam has the effect of vaporizing the metal on a circular surface of the order of 30 μm in diameter. The openings made in the metal are identified by the reference 20. They are surrounded by a metal border 21 formed under the effect of the laser. The displacement of the laser, controlled by numerical control, makes it possible to confer on the mask layer the pattern which it is desired to transfer into the underlying thin layer. The shaping of the mask layer, thanks to the laser, does not exhibit any degradation in resolution due to the relief of the substrates. The minimum size of the engraved patterns and their resolution is essentially dictated by the laser focus parameters.
Le déplacement du point d'impact du laser sur la couche de métal est obtenu par un mouvement relatif entre le substrat et le laser, ou par dêflexion contrôlée du faisceau.The displacement of the point of impact of the laser on the metal layer is obtained by a relative movement between the substrate and the laser, or by controlled deflection of the beam.
Dans l'exemple de la figure 3, le motif pratiqué dans la couche de masque 14 correspond à de simples ouvertures destinées à la formation de prises de contact sur le substrat . La figure 4 montre la gravure de la couche mince 12 à travers les ouvertures de la couche de masque 14. Dans le cas de l'exemple illustré, il s'agit d'une gravure humide dans une solution à base de HF. La gravure est sélective pour l'oxyde de silicium de la couche mince 12, par rapport au métal de la couche de masque 14 et par rapport au silicium du substrat 10. Ainsi, la couche de masque préserve la couche mince d'oxyde de silicium dans les régions qu'elle recouvre, et la gravure a lieu avec arrêt sur le substrat sous- jacent 10. II convient de préciser qu'en fonction du matériau de la couche mince, ou des couches sous- jacentes, d'autres techniques de gravure, telles que les techniques de gravure par voie sèche, peuvent être également retenues. Par exemple une gravure anisotrope par ions réactifs est une alternative à la gravure chimique .In the example of FIG. 3, the pattern made in the mask layer 14 corresponds to simple openings intended for the formation of contacts on the substrate. FIG. 4 shows the etching of the thin layer 12 through the openings of the mask layer 14. In the case of the example illustrated, it is a wet etching in an HF-based solution. The etching is selective for the silicon oxide of the thin layer 12, with respect to the metal of the mask layer 14 and with respect to the silicon of the substrate 10. Thus, the mask layer preserves the thin layer of silicon oxide in the regions which it covers, and the etching takes place with stop on the underlying substrate 10. It should be noted that depending on the material of the thin layer, or underlying layers, other etching techniques, such as dry etching techniques, can also be retained. For example, anisotropic etching with reactive ions is an alternative to chemical etching.
Après la gravure, la couche de masque 14 peut être retirée par élimination sélective de l'or. On obtient la structure représentée à la figure 5. Eventuellement, une couche de métal de contact peut ensuite être déposée et mise en forme pour réaliser des prises de contact sur les régions du substrat mises à nu. La couche de métal de contact est indiquée en trait discontinu, avec la référence 22. Elle peut être mise à profit pour relier électriquement des parties du substrat 10 entre-elles, ou à d'autres composants non représentés .After etching, the mask layer 14 can be removed by selective removal of the gold. The structure shown in FIG. 5 is obtained. Optionally, a layer of contact metal can then be deposited and shaped to make contact points on the regions of the substrate exposed. The contact metal layer is indicated in broken lines, with the reference 22. It can be used to electrically connect parts of the substrate 10 to one another, or to other components not shown.
La figure 6 montre une application du procédé de l'invention à la réalisation d'un contact par la face arrière d'un substrat SOI. Les substrats SOI, silicium sur isolant, présentent une couche mince superficielle de silicium 13, séparée d'un substrat massif en silicium 10 par une couche enterrée 12 d'oxyde de silicium, de nitrure de silicium ou d'un autre matériau isolant. La face "arrière" est la faceFIG. 6 shows an application of the method of the invention to the production of a contact by the rear face of an SOI substrate. SOI substrates, silicon on insulator, have a thin surface layer of silicon 13, separated from a solid silicon substrate 10 by a buried layer 12 of silicon oxide, silicon nitride or other insulating material. The "back" side is the side
"libre" du substrat massif de support 10. La réalisation d'une prise de contact comprend la formation, dans le substrat 10, d'une ouverture qui s'étend jusqu'au voisinage de la couche mince de silicium 13. C'est en effet dans cette couche que. sont généralement réalisés les composants et les circuits intégrés. Ainsi, une ouverture large 30 est d'abord gravée dans le silicium du substrat de support 10 jusqu'à atteindre la couche enterrée d'oxyde de silicium 12. La gravure, dans une solution de KOH a lieu avec arrêt sur l'oxyde de silicium."free" from the solid support substrate 10. The making of a contact includes the formation, in the substrate 10, of an opening which extends to the vicinity of the thin layer of silicon 13. It is indeed in this layer that. components and integrated circuits are generally produced. Thus, a wide opening 30 is first etched in the silicon of the support substrate 10 until reaching the buried layer of silicon oxide 12. The etching, in a KOH solution takes place with stop on the oxide of silicon.
Une couche d'oxyde de silicium 32 ou d'un matériau isolant (nitrure, polyamide, ... ou autre) est ensuite déposée sur la face arrière du substrat en tapissant l'intérieur de l'ouverture 30. La couche 32 assure une isolation électrique du support.A layer of silicon oxide 32 or of an insulating material (nitride, polyamide, etc.) is then deposited on the rear face of the substrate by lining the inside of the opening 30. The layer 32 provides a electrical insulation of the support.
Au fond de l'ouverture large 30, on met en forme de la couche de l'oxyde enterrée 12 de façon à y pratiquer un passage de contact 20. Le passage 20 est réalisé de la façon décrite en référence aux figures 1 à 5, à l'aide d'un masque non représenté. Finalement, une couche de métal de contact 22 est déposée sur l'oxyde de silicium de la face arrière et dans l'ouverture 30. La couche de métal 22 est aussi en contact électrique avec la couche mince superficielle de silicium 13, sur sa face tournée vers la couche d'oxyde enterrée. Comme le montre la figure 6, la couche de métal de contact 22 peut également être mise en forme.At the bottom of the wide opening 30, the buried oxide layer 12 is shaped so as to make a contact passage 20 there. The passage 20 is produced in the manner described with reference to FIGS. 1 to 5, using a mask not shown. Finally, a layer of contact metal 22 is deposited on the silicon oxide on the rear face and in the opening 30. The metal layer 22 is also in electrical contact with the thin surface layer of silicon 13, on its face. facing the buried oxide layer. As shown in Figure 6, the contact metal layer 22 can also be shaped.
La figure 7 montre une variante du procédé de réalisation d'une prise de contact conforme à la figureFigure 7 shows a variant of the method of making a contact in accordance with the figure
6 dans lequel l'ouverture 30 dans la couche de silicium massif de support 10 est réalisée par gravure anisotrope sèche, par ions réactifs (DRIE) .6 in which the opening 30 in the silicon layer support mass 10 is produced by dry anisotropic etching, by reactive ions (DRIE).
DOCUMENTS CITES (1)CITED DOCUMENTS (1)
US-A-5 004 672US-A-5,004,672
(2) "A Plated Through-Hole Interconnect Technology in(2) "A Plated Through-Hole Interconnect Technology in
Silicon" de Maha A. S. Jaafar et Denice D. DentonSilicon "by Maha A. S. Jaafar and Denice D. Denton
J. Electrochem. Soc. Vol 144, No7 1997, pages 2491-J. Electrochem. Soc. Vol 144, No7 1997, pages 2491-
2495 2495

Claims

REVENDICATIONS
1. Procédé de mise en forme d'une couche mince (12) comprenant les étapes successives suivantes :1. Method for forming a thin layer (12) comprising the following successive steps:
- le dépôt sur la couche mince d'une couche (14) en un métal différent du matériau de la couche mince, susceptible d'être gravé par laser, • - la gravure dans la couche de métal d' au moins une ouverture (20) selon un motif coïncidant avec au moins une partie de la couche mince devant être éliminée, la gravure ayant lieu par soumission locale de la couche de métal à un faisceau laser (18) , et- the deposition on the thin layer of a layer (14) of a metal different from the material of the thin layer, capable of being etched by laser, • - the etching in the metal layer of at least one opening (20 ) in a pattern coinciding with at least part of the thin layer to be removed, the etching taking place by locally subjecting the metal layer to a laser beam (18), and
- la gravure localisée de la couche mince sous-jacente, selon le motif, en utilisant la couche de métal (14) comme masque de gravure .- localized etching of the underlying thin layer, depending on the pattern, using the metal layer (14) as an etching mask.
2. Procédé selon la revendication 1, - dans lequel la gravure de la couche mince est une gravure humide .2. Method according to claim 1, - in which the etching of the thin layer is a wet etching.
3. Procédé selon la revendication 1, dans lequel la gravure de la couche mince est une gravure sèche.3. Method according to claim 1, in which the etching of the thin layer is a dry etching.
4. Procédé selon la revendication 1, dans lequel la couche de métal (14) est réalisée en un métal choisi parmi Au, Al, ..., leurs alliages et l'Au précédé d'une' couche d'adhérence en Cr ou Ti ou W.4. The method of claim 1, wherein the metal layer (14) is made of a metal chosen from Au, Al, ..., their alloys and Au preceded by an ' adhesion layer in Cr or Ti or W.
5. Procédé selon la revendication 1, dans lequel on effectue un déplacement du faisceau laser sur la couche de métal pour graver continûment au moins un motif.5. Method according to claim 1, in which the laser beam is moved over the metal layer for continuously etching at least one pattern.
6. Procédé de formation d'une prise de contact sur un substrat comprenant une couche mince, dans lequel on pratique localement une ouverture (20) dans la couche mince et dans lequel on forme une couche de contact (22) recouvrant, au moins localement, la couche mince et venant en contact avec ledit substrat à travers l'ouverture, caractérisé en ce que l'on pratique l'ouverture conformément au procédé de la revendication 1.6. A method of forming a contact on a substrate comprising a thin layer, in which an opening (20) is made locally in the thin layer and in which a contact layer (22) is formed covering, at least locally , the thin layer and coming into contact with said substrate through the opening, characterized in that the opening is made in accordance with the method of claim 1.
7. Procédé selon la revendication 6 comprenant en outre une mise en forme de la couche de contact.7. The method of claim 6 further comprising shaping the contact layer.
8. Procédé de formation d'une prise de contact sur un substrat de type silicium sur isolant (SOI) comprenant une couche superficielle de silicium (13) , une première couche mince d'isolant enterrée (12) et une couche de support (10) , dans lequel on forme un puits (30) à travers la couche de support, pour mettre localement à nu la première couche mince d'isolant, dans lequel on dépose dans le puits une deuxième couche d'isolant (32), et dans lequel on forme une prise de contact sur la couche superficielle de silicium à travers les couches minces d'isolant mises à nu, conformément au procédé de la revendication 6. 8. Method for forming a contact on a silicon on insulator (SOI) type substrate comprising a surface layer of silicon (13), a first thin layer of buried insulator (12) and a support layer (10 ), in which a well (30) is formed through the support layer, to locally expose the first thin layer of insulation, in which a second layer of insulation (32) is deposited in the well, and in which forms a contact on the surface layer of silicon through the thin layers of insulation exposed, according to the method of claim 6.
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DE102009057881A1 (en) * 2009-12-11 2011-06-16 Centrothem Photovoltaics Ag Method for laser structuring of silicon oxide layer transparent for laser radiation for producing solar cell, involves etching silicon oxide layer by etching medium while layer is temporarily protected against effect of etching medium

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