WO2003005415A3 - Super gto-based power blocks - Google Patents

Super gto-based power blocks Download PDF

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Publication number
WO2003005415A3
WO2003005415A3 PCT/US2002/021140 US0221140W WO03005415A3 WO 2003005415 A3 WO2003005415 A3 WO 2003005415A3 US 0221140 W US0221140 W US 0221140W WO 03005415 A3 WO03005415 A3 WO 03005415A3
Authority
WO
WIPO (PCT)
Prior art keywords
base region
conductive contacts
insulator
metal stripes
conductivity type
Prior art date
Application number
PCT/US2002/021140
Other languages
French (fr)
Other versions
WO2003005415A2 (en
Inventor
Victor Temple
Forrest Holroyd
Sabih Al-Marayati
Deva Pattanayak
Original Assignee
Silicon Power Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Power Corp filed Critical Silicon Power Corp
Priority to AU2002316543A priority Critical patent/AU2002316543A1/en
Publication of WO2003005415A2 publication Critical patent/WO2003005415A2/en
Publication of WO2003005415A3 publication Critical patent/WO2003005415A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)

Abstract

A gate turn-off thyristor (GTO) device has a lower portion, an upper portion and a lid. The lower portion has a lower base region of a first conductivity type, and a lower emitter region of a second conductivity type disposed at or from a lower surface of the lower base region. A lower junction is formed between the lower base region and the lower emitter region. The upper portion has an upper base region (641) of the second conductivity type, and upper emitter regions (643) of the first conductivity type disposed at or from an upper surface of the upper base region. An upper-lower junction is formed between the lower base region and the upper base region (641), and upper junctions are formed between the upper base region (641) and the upper emitter regions (643). The upper base region (641) and upper emitter regions (643) form an upper base surface with first conductive contacts to the upper base region (641) alternating with second conductive contacts to the upper emitter regions (643). The lid has a layer of insulator (647) with upper and lower surfaces. Upper metal stripes (627), (629) extend along the upper surface of the insulator (647), and lower metal stripes (645) extend along the lower surface of the insulator (647). The upper and lower metal stripes are connected together by vias that extend through the insulator (647). One set of the lower metal stripes (645) contacts the first conductive contacts, but not the second conductive contacts. Another set of the lower metal stripes (645) contacts the second conductive contacts, but not the first conductive contacts.
PCT/US2002/021140 2001-07-03 2002-07-03 Super gto-based power blocks WO2003005415A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002316543A AU2002316543A1 (en) 2001-07-03 2002-07-03 Super gto-based power blocks

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US30238601P 2001-07-03 2001-07-03
US60/302,386 2001-07-03
US09/968,615 US7692211B1 (en) 2001-07-03 2001-10-02 Super GTO-based power blocks
US09/968,615 2001-10-02

Publications (2)

Publication Number Publication Date
WO2003005415A2 WO2003005415A2 (en) 2003-01-16
WO2003005415A3 true WO2003005415A3 (en) 2003-04-10

Family

ID=26972906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/021140 WO2003005415A2 (en) 2001-07-03 2002-07-03 Super gto-based power blocks

Country Status (3)

Country Link
US (2) US7692211B1 (en)
AU (1) AU2002316543A1 (en)
WO (1) WO2003005415A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8130008B2 (en) * 2010-03-01 2012-03-06 Infineon Technologies Ag Integrated circuit with a radiation-sensitive thyristor structure
TWI424550B (en) 2010-12-30 2014-01-21 Ind Tech Res Inst Power device package structure
US20130229777A1 (en) * 2012-03-01 2013-09-05 Infineon Technologies Ag Chip arrangements and methods for forming a chip arrangement
CN103325750B (en) * 2013-05-24 2015-07-08 苏州英能电子科技有限公司 High-power whole wafer flat plate pressure welding type encapsulating structure and method thereof
US9159790B2 (en) 2014-02-18 2015-10-13 Silicon Power Corporation Device and method for controlling the turn-off of a solid state switch (SGTO)
US10193324B2 (en) 2015-11-13 2019-01-29 Silicon Power Corporation Low-loss and fast acting solid-state breaker
US10193322B2 (en) 2015-11-13 2019-01-29 Silicon Power Corporation Low-loss and fast acting solid-state breaker

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491351A (en) * 1993-10-30 1996-02-13 Abb Management Ag Gate turn-off thyristor
US5521436A (en) * 1992-01-27 1996-05-28 Harris Corporation Semiconductor device with a foil-sealed lid

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US4648174A (en) 1985-02-05 1987-03-10 General Electric Company Method of making high breakdown voltage semiconductor device
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Publication number Priority date Publication date Assignee Title
US5521436A (en) * 1992-01-27 1996-05-28 Harris Corporation Semiconductor device with a foil-sealed lid
US5491351A (en) * 1993-10-30 1996-02-13 Abb Management Ag Gate turn-off thyristor

Also Published As

Publication number Publication date
AU2002316543A1 (en) 2003-01-21
US7692211B1 (en) 2010-04-06
US20100200893A1 (en) 2010-08-12
WO2003005415A2 (en) 2003-01-16

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