WO2002103089A3 - Heating of an effusion cell for molecular beam epitaxy - Google Patents

Heating of an effusion cell for molecular beam epitaxy Download PDF

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Publication number
WO2002103089A3
WO2002103089A3 PCT/IB2002/003300 IB0203300W WO02103089A3 WO 2002103089 A3 WO2002103089 A3 WO 2002103089A3 IB 0203300 W IB0203300 W IB 0203300W WO 02103089 A3 WO02103089 A3 WO 02103089A3
Authority
WO
WIPO (PCT)
Prior art keywords
container
cross
molecular beam
heating
effusion cell
Prior art date
Application number
PCT/IB2002/003300
Other languages
French (fr)
Other versions
WO2002103089A2 (en
Inventor
Esa Supponen
Original Assignee
Dca Instr Oy
Esa Supponen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dca Instr Oy, Esa Supponen filed Critical Dca Instr Oy
Priority to PCT/IB2002/003300 priority Critical patent/WO2002103089A2/en
Publication of WO2002103089A2 publication Critical patent/WO2002103089A2/en
Publication of WO2002103089A3 publication Critical patent/WO2002103089A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

An effusion cell for creating a molecular beam of source material to be deposited epitaxially on a substrate. The effusion cell comprises a crucible, which comprises a container for the source material of a first cross-sectional dimension, the container having a closed first end and an open second end, a substantially conical nozzle, which nozzle has its cross-section opening gradually along the direction of the molecular beam from a second cross-sectional dimension at its open first end to a third cross-sectional dimension at its open second end, and a neck part connecting the second end of the container to the first end of the conical nozzle, for conducting the molecular beam from the container to the nozzle, where said first and third cross-sectional dimensions are greater than said second cross-sectional dimension. The effusion cell further comprises at least one first resistive heating filament for heating the container, for vaporizing the source material in the container, and at least one second resistive heating filament for heating the substantially conical nozzle to a substantially uniform temperature along the direction of the molecular beam, said second heating filament being arranged immediate and in conformity with said substantially conical nozzle and to cover substantially the whole length of the conical nozzle from its first end to its second end.
PCT/IB2002/003300 2002-08-16 2002-08-16 Heating of an effusion cell for molecular beam epitaxy WO2002103089A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/IB2002/003300 WO2002103089A2 (en) 2002-08-16 2002-08-16 Heating of an effusion cell for molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2002/003300 WO2002103089A2 (en) 2002-08-16 2002-08-16 Heating of an effusion cell for molecular beam epitaxy

Publications (2)

Publication Number Publication Date
WO2002103089A2 WO2002103089A2 (en) 2002-12-27
WO2002103089A3 true WO2002103089A3 (en) 2003-11-13

Family

ID=11004280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/003300 WO2002103089A2 (en) 2002-08-16 2002-08-16 Heating of an effusion cell for molecular beam epitaxy

Country Status (1)

Country Link
WO (1) WO2002103089A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4442558B2 (en) * 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 Evaporation source heating control method, evaporation source cooling control method, and evaporation source control method
FR2894257B1 (en) * 2005-12-02 2008-02-29 Riber Sa HIGH TEMPERATURE EFFUSION CELL WITH HIGH CAPACITY
JP6657239B2 (en) * 2016-09-22 2020-03-04 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Nozzle for dispensing assembly of material deposition source configuration, material deposition source configuration, vacuum deposition system, and method for depositing material

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5253266A (en) * 1992-07-20 1993-10-12 Intevac, Inc. MBE effusion source with asymmetrical heaters
US5540780A (en) * 1995-06-23 1996-07-30 The United States Of America As Represented By The Secretary Of The Air Force Molecular beam epitaxy effusion cell
WO1998008780A1 (en) * 1996-08-29 1998-03-05 Chorus Corporation Unibody crucible and effusion source employing such a crucible
US6053981A (en) * 1998-09-15 2000-04-25 Coherent, Inc. Effusion cell and method of use in molecular beam epitaxy
US6162300A (en) * 1998-09-25 2000-12-19 Bichrt; Craig E. Effusion cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5253266A (en) * 1992-07-20 1993-10-12 Intevac, Inc. MBE effusion source with asymmetrical heaters
US5540780A (en) * 1995-06-23 1996-07-30 The United States Of America As Represented By The Secretary Of The Air Force Molecular beam epitaxy effusion cell
WO1998008780A1 (en) * 1996-08-29 1998-03-05 Chorus Corporation Unibody crucible and effusion source employing such a crucible
US6053981A (en) * 1998-09-15 2000-04-25 Coherent, Inc. Effusion cell and method of use in molecular beam epitaxy
US6162300A (en) * 1998-09-25 2000-12-19 Bichrt; Craig E. Effusion cell

Also Published As

Publication number Publication date
WO2002103089A2 (en) 2002-12-27

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