WO2002101826A1 - Structure semi-conductrice a voie resistive - Google Patents
Structure semi-conductrice a voie resistive Download PDFInfo
- Publication number
- WO2002101826A1 WO2002101826A1 PCT/US2001/050692 US0150692W WO02101826A1 WO 2002101826 A1 WO2002101826 A1 WO 2002101826A1 US 0150692 W US0150692 W US 0150692W WO 02101826 A1 WO02101826 A1 WO 02101826A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- monocrystalline
- compound semiconductor
- silicon substrate
- overlying
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 300
- 239000000463 material Substances 0.000 claims abstract description 289
- 239000000758 substrate Substances 0.000 claims abstract description 212
- 150000001875 compounds Chemical class 0.000 claims abstract description 141
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000010703 silicon Substances 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims description 83
- 230000008569 process Effects 0.000 claims description 68
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 44
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 40
- 239000004020 conductor Substances 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 230000007547 defect Effects 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 700
- 230000003287 optical effect Effects 0.000 description 46
- 239000013078 crystal Substances 0.000 description 40
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 37
- 229910052712 strontium Inorganic materials 0.000 description 26
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 24
- 239000002131 composite material Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 21
- 238000012545 processing Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 19
- 229910052732 germanium Inorganic materials 0.000 description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 18
- 230000008021 deposition Effects 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000001451 molecular beam epitaxy Methods 0.000 description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 238000004891 communication Methods 0.000 description 16
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 15
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 15
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 14
- 150000001342 alkaline earth metals Chemical class 0.000 description 14
- 229910052785 arsenic Inorganic materials 0.000 description 14
- 230000008901 benefit Effects 0.000 description 14
- 229910052788 barium Inorganic materials 0.000 description 13
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 13
- 239000004094 surface-active agent Substances 0.000 description 13
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 11
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- -1 alkaline earth metal vanadates Chemical class 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 8
- 238000003877 atomic layer epitaxy Methods 0.000 description 8
- 238000000224 chemical solution deposition Methods 0.000 description 8
- 238000004211 migration-enhanced epitaxy Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000004549 pulsed laser deposition Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 229910010252 TiO3 Inorganic materials 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052755 nonmetal Inorganic materials 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910021523 barium zirconate Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- IPCGGVKCDVFDQU-UHFFFAOYSA-N [Zn].[Se]=S Chemical compound [Zn].[Se]=S IPCGGVKCDVFDQU-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002843 nonmetals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- HFQPLMWYFNEKMI-UHFFFAOYSA-N [O].[As].[Sr] Chemical compound [O].[As].[Sr] HFQPLMWYFNEKMI-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 2
- 229940075613 gadolinium oxide Drugs 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- SRQSFQDGRIDVJT-UHFFFAOYSA-N germanium strontium Chemical compound [Ge].[Sr] SRQSFQDGRIDVJT-UHFFFAOYSA-N 0.000 description 2
- ZPPUVHMHXRANPA-UHFFFAOYSA-N germanium titanium Chemical compound [Ti].[Ge] ZPPUVHMHXRANPA-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- ZGYRNAAWPCRERX-UHFFFAOYSA-N lanthanum(3+) oxygen(2-) scandium(3+) Chemical compound [O--].[O--].[O--].[Sc+3].[La+3] ZGYRNAAWPCRERX-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910016034 BaGe2 Inorganic materials 0.000 description 1
- 229910002929 BaSnO3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- XAGCFZRLLKGMKC-UHFFFAOYSA-N [As].[Hf] Chemical compound [As].[Hf] XAGCFZRLLKGMKC-UHFFFAOYSA-N 0.000 description 1
- NADDYNUVLPNTIE-UHFFFAOYSA-N [As].[Ti] Chemical compound [As].[Ti] NADDYNUVLPNTIE-UHFFFAOYSA-N 0.000 description 1
- TUDWSEQKKUSFNR-UHFFFAOYSA-N [Hf]#P Chemical compound [Hf]#P TUDWSEQKKUSFNR-UHFFFAOYSA-N 0.000 description 1
- BYAPSYQBJBTBCL-UHFFFAOYSA-N [O].[As].[Ba] Chemical compound [O].[As].[Ba] BYAPSYQBJBTBCL-UHFFFAOYSA-N 0.000 description 1
- KEQFKZKZXRNGKY-UHFFFAOYSA-N [O].[P].[Ba] Chemical compound [O].[P].[Ba] KEQFKZKZXRNGKY-UHFFFAOYSA-N 0.000 description 1
- YCNQUCKZQNIBOY-UHFFFAOYSA-N [O].[P].[Sr] Chemical compound [O].[P].[Sr] YCNQUCKZQNIBOY-UHFFFAOYSA-N 0.000 description 1
- CEBPHSIWCZRYPV-UHFFFAOYSA-N [O].[Sr].[In] Chemical compound [O].[Sr].[In] CEBPHSIWCZRYPV-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- FIJMPJIZAQHCBA-UHFFFAOYSA-N arsanylidynezirconium Chemical compound [Zr]#[As] FIJMPJIZAQHCBA-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- BOGASOWHESMEKT-UHFFFAOYSA-N barium;oxotin Chemical compound [Ba].[Sn]=O BOGASOWHESMEKT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- VQYKQHDWCVUGBB-UHFFFAOYSA-N phosphanylidynezirconium Chemical compound [Zr]#P VQYKQHDWCVUGBB-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000003362 semiconductor superlattice Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 150000003437 strontium Chemical class 0.000 description 1
- LCGWNWAVPULFIF-UHFFFAOYSA-N strontium barium(2+) oxygen(2-) Chemical compound [O--].[O--].[Sr++].[Ba++] LCGWNWAVPULFIF-UHFFFAOYSA-N 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical class [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910000855 zintl phase Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
Definitions
- This invention relates generally to semiconductor structures and devices and to a method for their fabrication, and more specifically to semiconductor structures and devices and to the fabrication and use of semiconductor structures, devices, and integrated circuits that include a monocrystalline material layer comprised of semiconductor material, compound semiconductor material, and/or other types of material such as metals and non-metals.
- Semiconductor devices often include multiple layers of conductive, insulating, and semiconductive layers. Often, the desirable properties of such layers improve with the crystallinity of the layer. For example, the electron mobility and band gap of semiconductive layers improves as the crystallinity of the layer increases. Similarly, the free electron concentration of conductive layers and the electron charge displacement and electron energy recoverability of insulative or dielectric films improves as the crystallinity of these layers increases.
- a variety of semiconductor devices could advantageously be fabricated in or using that film at a low cost compared to the cost of fabricating such devices beginning with a bulk wafer of semiconductor material or in an epitaxial film of such material on a bulk wafer of semiconductor material.
- a thin film of high quality monocrystalline material could be realized beginning with a bulk wafer such as a silicon wafer, an integrated device structure could be achieved that took advantage of the best properties of both the silicon and the high quality monocrystalline material.
- a monocrystalline substrate that is compliant with a high quality monocrystalline material layer so that true two- dimensional growth can be achieved for the formation of quality semiconductor structures, devices and integrated circuits having grown monocrystalline film the same crystal orientation as an underlying substrate.
- This monocrystalline material layer may be comprised of a semiconductor material, a compound semiconductor material, and other types of material such as metals and non-metals.
- Some monocrystalline semiconductors are not well-suited for forming resistive paths. For example, regions of high resistivity may be difficult or expensive to form in GaAs as compared to Si. A need therefore exists for a structure that forms improved regions of selected resistivity coupled to such semiconductors.
- FIGS. 1 , 2, and 3 illustrate schematically, in cross section, device structures in accordance with various embodiments of the invention
- FIG. 4 illustrates graphically the relationship between maximum attainable film thickness and lattice mismatch between a host crystal and a grown crystalline overlayer
- FIG. 5 illustrates a high resolution Transmission Electron Micrograph of a structure including a monocrystalline accommodating buffer layer
- FIG. 6 illustrates an x-ray diffraction spectrum of a structure including a monocrystalline accommodating buffer layer
- FIG. 7 illustrates a high resolution Transmission Electron Micrograph of a structure including an amorphous oxide layer
- FIG. 8 illustrates an x-ray diffraction spectrum of a structure including an amorphous oxide layer
- FIGS. 9-12 illustrate schematically, in cross-section, the formation of a device structure in accordance with another embodiment of the invention.
- FIGS. 13-16 illustrate a probable molecular bonding structure of the device structures illustrated in FIGS. 9-12;
- FIGS. 17-20 illustrate schematically, in cross-section, the formation of a device structure in accordance with still another embodiment of the invention.
- FIGS. 21-23 illustrate schematically, in cross-section, the formation of yet another embodiment of a device structure in accordance with the invention.
- FIGS. 21-23 illustrate schematically, in cross section, the formation of a yet another embodiment of a device structure in accordance with the invention.
- FIGS. 24, 25 illustrate schematically, in cross section, device structures that can be used in accordance with various embodiments of the invention
- FIGS. 26-30 include illustrations of cross-sectional views of a portion of an integrated circuit that includes a compound semiconductor portion, a bipolar portion, and an MOS portion in accordance with what is shown herein;
- FIGS. 31-37 include illustrations of cross-sectional views of a portion of another integrated circuit that includes a semiconductor laser and a MOS transistor in accordance with what is shown herein;
- FIGS. 38, 39 and 40 illustrate schematically, in cross section, device structures including a resistor in accordance with various embodiments of the invention;
- FIG. 41 illustrates a process for forming the embodiments of FIGS. 38, 39 and 40;
- FIG. 42 illustrates schematically, in cross section, a device including a waveguide component in accordance with an embodiment of the invention
- FIG. 43 is a fragmentary plan view taken along line 43-43 of FIG. 42;
- FIGS. 44 and 45 illustrate schematically, in cross section, devices including a waveguide component in accordance with embodiments of this invention.
- FIG. 46 illustrates a process for forming the embodiments of FIGS. 42- 45.
- FIGS. 1-37 relate to semiconductor structures that include at least one monocrystalline semiconductor layer overlying a monocrystalline semiconductor substrate, wherein the semiconductor layer and the substrate are formed of dissimilar semiconductor materials. These figures also relate to processes for forming such semiconductor structures, and to circuit components overlying or integrated in the semiconductor layer.
- FIGS. 38-46 relate to semiconductor structures of the type shown in FIGS. 1-37, wherein a resistor or resistive region in or on one of two semiconductor materials is electrically coupled to a circuit component in or on the other of the two semiconductor materials.
- FIG. 1 illustrates schematically, in cross section, a portion of a semiconductor structure 20 in accordance with an embodiment of the invention.
- Semiconductor structure 20 includes a monocrystalline substrate 22, accommodating buffer layer 24 comprising a monocrystalline material, and a monocrystalline material layer 26.
- the term "monocrystalline" shall have the meaning commonly used within the semiconductor industry.
- the term shall refer to materials that are a single crystal or that are substantially a single crystal and shall include those materials having a relatively small number of defects such as dislocations and the like as are commonly found in substrates of silicon or germanium or mixtures of silicon and germanium and epitaxial layers of such materials commonly found in the semiconductor industry.
- structure 20 also includes an amorphous intermediate layer 28 positioned between substrate 22 and accommodating buffer layer 24.
- Structure 20 may also include a template layer 30 between the accommodating buffer layer and monocrystalline material layer 26.
- the template layer helps to initiate the growth of the monocrystalline material layer on the accommodating buffer layer.
- the amorphous intermediate layer helps to relieve the strain in the accommodating buffer layer and by doing so, aids in the growth of a high crystalline quality accommodating buffer layer.
- Substrate 22, in accordance with an embodiment of the invention, is a monocrystalline semiconductor or compound semiconductor wafer, preferably of large diameter.
- the wafer can be of, for example, a material from Group IV of the periodic table, and preferably a material from Group IVB, e.g.
- Group IV semiconductor materials include silicon, germanium, mixed silicon and germanium, mixed silicon and carbon, mixed silicon, germanium and carbon, and the like.
- substrate 22 is a wafer containing silicon or germanium, and most preferably is a high quality monocrystalline silicon wafer as used in the semiconductor industry.
- Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material epitaxially grown on the underlying substrate.
- amorphous intermediate layer 28 is grown on substrate 22 at the interface between substrate 22 and the growing accommodating buffer layer by the oxidation of substrate 22 during the growth of layer 24.
- the amorphous intermediate layer serves to relieve strain that might otherwise occur in the monocrystalline accommodating buffer layer as a result of differences in the lattice constants of the substrate and the buffer layer.
- lattice constant refers to the distance between atoms of a cell measured in the plane of the surface. If such strain is not relieved by the amorphous intermediate layer, the strain may cause defects in the crystalline structure of the accommodating buffer layer. Defects in the crystalline structure of the accommodating buffer layer, in turn, would make it difficult to achieve a high quality crystalline structure in monocrystalline material layer 26 which may comprise a semiconductor material, a compound semiconductor material, or another type of material such as a metal or a non- metal.
- Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material selected for its crystalline compatibility with the underlying substrate and with the overlying material layer.
- the material could be an oxide or nitride having a lattice structure closely matched to the substrate and to the subsequently applied monocrystalline material layer.
- Materials that are suitable for the accommodating buffer layer include metal oxides such as the alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide. Additionally, various nitrides such as gallium nitride, aluminum nitride, and boron nitride may also be used for the accommodating buffer layer.
- metal oxides such as the alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin
- Amorphous interface layer 28 is preferably an oxide formed by the oxidation of the surface of substrate 22, and more preferably is composed of a silicon oxide. The thickness of layer 28 is sufficient to relieve strain attributed to mismatches between the lattice constants of substrate 22 and accommodating buffer layer 24. Typically, layer 28 has a thickness in the range of approximately 0.5-5 nm.
- the material for monocrystalline material layer 26 can be selected, as desired, for a particular structure or application.
- the mono- crystalline material of layer 26 may comprise a compound semiconductor which can be selected, as needed for a particular semiconductor structure, from any of the Group IIIA and VA elements (lll-V semiconductor compounds), mixed lll-V compounds, Group ll(A or B) and VIA elements (ll-VI semiconductor compounds), and mixed ll-VI compounds.
- monocrystalline material layer 26 may also comprise other semiconductor materials, metals, or non-metal materials which are used in the formation of semiconductor structures, devices and/or integrated circuits.
- FIG. 2 illustrates, in cross section, a portion of a semiconductor structure 40 in accordance with a further embodiment of the invention. Structure 40 is similar to the previously described semiconductor structure 20, except that an additional buffer layer 32 is positioned between accommodating buffer layer 24 and monocrystalline material layer 26.
- the additional buffer layer is positioned between template layer 30 and the overlying layer of monocrystalline material.
- the additional buffer layer formed of a semiconductor or compound semiconductor material when the monocrystalline material layer 26 comprises a semiconductor or compound semiconductor material, serves to provide a lattice compensation when the lattice constant of the accommodating buffer layer cannot be adequately matched to the overlying monocrystalline semiconductor or compound semiconductor material layer.
- FIG. 3 schematically illustrates, in cross section, a portion of a semiconductor structure 34 in accordance with another exemplary embodiment of the invention.
- Structure 34 is similar to structure 20, except that structure 34 includes an amorphous layer 36, rather than accommodating buffer layer 24 and amorphous interface layer 28, and an additional monocrystalline layer 38.
- amorphous layer 36 may be formed by first forming an accommodating buffer layer and an amorphous interface layer in a similar manner to that described above. Monocrystalline layer 38 is then formed (by epitaxial growth) overlying the monocrystalline accommodating buffer layer. The accommodating buffer layer is then exposed to an anneal process to convert the monocrystalline accommodating buffer layer to an amorphous layer. Amorphous layer 36 formed in this manner comprises materials from both the accommodating buffer and interface layers, which amorphous layers may or may not amalgamate. Thus, layer 36 may comprise one or two amorphous layers. Formation of amorphous layer 36 between substrate 22 and additional monocrystalline layer 26 (subsequent to layer 38 formation) relieves stresses between layers 22 and 38 and provides a true compliant substrate for subsequent processing- -e.gr., monocrystalline material layer 26 formation.
- Additional monocrystalline layer 38 may include any of the materials described throughout this application in connection with either of monocrystalline material layer 26 or additional buffer layer 32.
- layer 38 may include monocrystalline Group IV or monocrystalline compound semiconductor materials.
- additional monocrystalline layer 38 serves as an anneal cap during layer 36 formation and as a template for subsequent monocrystalline layer 26 formation. Accordingly, layer 38 is preferably thick enough to provide a suitable template for layer 26 growth (at least one monolayer) and thin enough to allow layer 38 to form as a substantially defect free monocrystalline material.
- additional monocrystalline layer 38 comprises monocrystalline material (e.g., a material discussed above in connection with monocrystalline layer 26) that is thick enough to form devices within layer 38.
- a semiconductor structure in accordance with the present invention does not include monocrystalline material layer 26. In other words, the semiconductor structure in accordance with this embodiment only includes one monocrystalline layer disposed above amorphous oxide layer 36.
- monocrystalline substrate 22 is a silicon substrate oriented in the (100) direction.
- the silicon substrate can be, for example, a silicon substrate as is commonly used in making complementary metal oxide semiconductor (CMOS) integrated circuits having a diameter of about 200-300 mm.
- accommodating buffer layer 24 is a monocrystalline layer of Sr z Ba ⁇ . z Ti ⁇ 3 where z ranges from 0 to 1 and the amorphous intermediate layer is a layer of silicon oxide (SiO x ) formed at the interface between the silicon substrate and the accommodating buffer layer. The value of z is selected to obtain one or more lattice constants closely matched to corresponding lattice constants of the subsequently formed layer 26.
- the accommodating buffer layer can have a thickness of about 2 to about 100 nanometers (nm) and preferably has a thickness of about 5 nm. In general, it is desired to have an accommodating buffer layer thick enough to isolate the monocrystalline mateal layer 26 from the substrate to obtain the desired electrical and optical properties. Layers thicker than 100 nm usually provide little additional benefit while increasing cost unnecessarily; however, thicker layers may be fabricated if needed.
- the amorphous intermediate layer of silicon oxide can have a thickness of about 0.5-5 nm, and preferably a thickness of about 1 to 2 nm.
- monocrystalline material layer 26 is a compound semiconductor layer of gallium arsenide (GaAs) or aluminum gallium arsenide (AIGaAs) having a thickness of about 1 nm to about 100 micrometers ( ⁇ m) and preferably a thickness of about 0.5 ⁇ m to 10 ⁇ m. The thickness generally depends on the application for which the layer is being prepared.
- a template layer is formed by capping the oxide layer.
- the template layer is preferably 1-10 monolayers of Ti-As, Sr-O-As, Sr-Ga-O, or Sr-AI-O. By way of a preferred example, 1-2 monolayers of Ti-As or Sr-Ga-O have been illustrated to successfully grow GaAs layers.
- monocrystalline substrate 22 is a silicon substrate as described above.
- the accommodating buffer layer is a monocrystalline oxide of strontium or barium zirconate or hafnate in a cubic or orthorhombic phase with an amorphous intermediate layer of silicon oxide formed at the interface between the silicon substrate and the accommodating buffer layer.
- the accommodating buffer layer can have a thickness of about 2-100 nm and preferably has a thickness of at least 5 nm to ensure adequate crystalline and surface quality and is formed of a monocrystalline SrZr ⁇ 3, BaZrO 3 , SrHfO 3 , BaSnO 3 or BaHfO 3 .
- a monocrystalline oxide layer of BaZrO 3 can grow at a temperature of about 700 degrees C.
- the lattice structure of the resulting crystalline oxide exhibits a 45 degree rotation with respect to the substrate silicon lattice structure.
- an accommodating buffer layer formed of these zirconate or hafnate materials is suitable for the growth of a monocrystalline material layer which comprises compound semiconductor materials in the indium phosphide (InP) system.
- the compound semiconductor material can be, for example, indium phosphide (InP), indium gallium arsenide (InGaAs), aluminum indium arsenide, (AllnAs), or aluminum gallium indium arsenic phosphide (AIGalnAsP), having a thickness of about 1.0 nm to 10 ⁇ m.
- a suitable template for this structure is 1-10 monolayers of zirconium-arsenic (Zr-As), zirconium-phosphorus (Zr-P), hafnium-arsenic (Hf-As), hafnium- phosphorus (Hf-P), strontium-oxygen-arsenic (Sr-O-As), strontium-oxygen- phosphorus (Sr-O-P), barium-oxygen-arsenic (Ba-O-As), indium-strontium- oxygen (In-Sr-O), or barium-oxygen-phosphorus (Ba-O-P), and preferably 1-2 monolayers of one of these materials.
- the surface is terminated with 1-2 monolayers of zirconium followed by deposition of 1-2 monolayers of arsenic to form a Zr-As template.
- a monocrystalline layer of the compound semiconductor material from the indium phosphide system is then grown on the template layer.
- the resulting lattice structure of the compound semiconductor material exhibits a 45 degree rotation with respect to the accommodating buffer layer lattice structure and a lattice mismatch to (100) InP of less than 2.5%, and preferably less than about 1.0%.
- a structure is provided that is suitable for the growth of an epitaxial film of a monocrystalline material comprising a ll-VI material overlying a silicon substrate.
- the substrate is preferably a silicon wafer as described above.
- a suitable accommodating buffer layer material is Sr x Ba ⁇ -x TiO 3 , where x ranges from 0 to 1 , having a thickness of about 2-100 nm and preferably a thickness of about 5-15 nm.
- the ll-VI compound semiconductor material can be, for example, zinc selenide (ZnSe) or zinc sulfur selenide (ZnSSe).
- a suitable template for this material system includes 1-10 monolayers of zinc-oxygen (Zn-O) followed by 1-2 monolayers of an excess of zinc followed by the selenidation of zinc on the surface.
- a template can be, for example, 1-10 monolayers of strontium-sulfur (Sr-S) followed by the ZnSeS.
- This embodiment of the invention is an example of structure 40 illustrated in FIG. 2.
- Substrate 22, accommodating buffer layer 24, and monocrystalline material layer 26 can be similar to those described in example 1.
- an additional buffer layer 32 serves to alleviate any strains that might result from a mismatch of the crystal lattice of the accommodating buffer layer and the lattice of the monocrystalline material.
- Buffer layer 32 can be a layer of germanium or a GaAs, an aluminum gallium arsenide (AIGaAs), an indium gallium phosphide (InGaP), an aluminum gallium phosphide (AIGaP), an indium gallium arsenide (InGaAs), an aluminum indium phosphide (AllnP), a gallium arsenide phosphide (GaAsP), or an indium gallium phosphide (InGaP) strain compensated superlattice.
- buffer layer 32 includes a GaAs x Pi -x superlattice, wherein the value of x ranges from 0 to 1.
- buffer layer 32 includes an ln y Ga ⁇ . y P superlattice, wherein the value of y ranges from 0 to 1.
- the lattice constant is varied from bottom to top across the superlattice to create a match between lattice constants of the underlying oxide and the overlying monocrystalline material which in this example is a compound semiconductor material.
- the compositions of other compound semiconductor materials, such as those listed above, may also be similarly varied to manipulate the lattice constant of layer 32 in a like manner.
- the superlattice can have a thickness of about 50-500 nm and preferably has a thickness of about 100-200 nm.
- buffer layer 32 can be a layer of monocrystalline germanium having a thickness of 1-50 nm and preferably having a thickness of about 2-20 nm.
- a template layer of either germanium-strontium (Ge-Sr) or germanium- titanium (Ge-Ti) having a thickness of about one monolayer can be used as a nucleating site for the subsequent growth of the monocrystalline material layer which in this example is a compound semiconductor material.
- the formation of the oxide layer is capped with either a monolayer of strontium or a monolayer of titanium to act as a nucleating site for the subsequent deposition of the monocrystalline germanium.
- the monolayer of strontium or titanium provides a nucleating site to which the first monolayer of germanium can bond.
- Substrate material 22, accommodating buffer layer 24, monocrystalline material layer 26 and template layer 30 can be the same as those described above in example 2.
- additional buffer layer 32 is inserted between the accommodating buffer layer and the overlying monocrystalline material layer.
- the buffer layer a further monocrystalline material which in this instance comprises a semiconductor material, can be, for example, a graded layer of indium gallium arsenide (InGaAs) or indium aluminum arsenide (InAIAs).
- additional buffer layer 32 includes InGaAs, in which the indium composition varies from 0 to about 50%.
- the additional buffer layer 32 preferably has a thickness of about 10-30 nm.
- Varying the composition of the buffer layer from GaAs to InGaAs serves to provide a lattice match between the underlying monocrystalline oxide material and the overlying layer of monocrystalline material which in this example is a compound semiconductor material.
- Such a buffer layer is especially advantageous if there is a lattice mismatch between accommodating buffer layer 24 and monocrystalline material layer 26.
- Substrate material 22, template layer 30, and monocrystalline material layer 26 may be the same as those described above in connection with example 1.
- Amorphous layer 36 is an amorphous oxide layer which is suitably formed of a combination of amorphous intermediate layer materials (e.g., layer 28 materials as described above) and accommodating buffer layer materials (e.g., layer 24 materials as described above).
- amorphous layer 36 may include a combination of SiO x and Sr z Ba ⁇ -z TiO 3 (where z ranges from 0 to 1 ),which combine or mix, at least partially, during an anneal process to form amorphous oxide layer 36.
- amorphous layer 36 may vary from application to application and may depend on such factors as desired insulating properties of layer 36, type of monocrystalline material comprising layer 26, and the like. In accordance with one exemplary aspect of the present embodiment, layer 36 thickness is about 2 nm to about 100 nm, preferably about 2-10 nm, and more preferably about 5-6 nm.
- Layer 38 comprises a monocrystalline material that can be grown epitaxially over a monocrystalline oxide material such as material used to form accommodating buffer layer 24.
- layer 38 includes the same materials as those comprising layer 26.
- layer 38 also includes GaAs.
- layer 38 may include materials different from those used to form layer 26.
- layer 38 is about 1 monolayer to about 100 nm thick.
- substrate 22 is a monocrystalline substrate such as a monocrystalline silicon or gallium arsenide substrate.
- the crystalline structure of the monocrystalline substrate is characterized by a lattice constant and by a lattice orientation.
- accommodating buffer layer 24 is also a monocrystalline material and the lattice of that monocrystalline material is characterized by a lattice constant and a crystal orientation.
- the lattice constants of the accommodating buffer layer and the monocrystalline substrate must be closely matched or, alternatively, must be such that upon rotation of one crystal orientation with respect to the other crystal orientation, a substantial match in lattice constants is achieved.
- FIG. 4 illustrates graphically the relationship of the achievable thickness of a grown crystal layer of high crystalline quality as a function of the mismatch between the lattice constants of the host crystal and the grown crystal.
- Curve 42 illustrates the boundary of high crystalline quality material. The area to the right of curve 42 represents layers that have a large number of defects. With no lattice mismatch, it is theoretically possible to grow an infinitely thick, high quality epitaxial layer on the host crystal.
- substrate 22 is a (100) or (111 ) oriented monocrystalline silicon wafer and accommodating buffer layer 24 is a layer of strontium barium titanate. Substantial matching of lattice constants between these two materials is achieved by rotating the crystal orientation of the titanate material by 45° with respect to the crystal orientation of the silicon substrate wafer.
- a silicon oxide layer in this example serves to reduce strain in the titanate monocrystalline layer that might result from any mismatch in the lattice constants of the host silicon wafer and the grown titanate layer.
- a high quality, thick, monocrystalline titanate layer is achievable.
- layer 26 is a layer of epitaxially grown monocrystalline material and that crystalline material is also characterized by a crystal lattice constant and a crystal orientation.
- the lattice constant of layer 26 differs from the lattice constant of substrate 22.
- the accommodating buffer layer must be of high crystalline quality.
- substantial matching between the crystal lattice constant of the host crystal, in this case, the monocrystalline accommodating buffer layer, and the grown crystal is desired.
- this substantial matching of lattice constants is achieved as a result of rotation of the crystal orientation of the grown crystal with respect to the orientation of the host crystal.
- the grown crystal is gallium arsenide, aluminum gallium arsenide, zinc selenide, or zinc sulfur selenide and the accommodating buffer layer is monocrystalline Sr x Ba ⁇ . x TiO 3 .
- substantial matching of crystal lattice constants of the two materials is achieved, wherein the crystal orientation of the grown layer is rotated by 45° with respect to the orientation of the host monocrystalline oxide.
- the host material is a strontium or barium zirconate or a strontium or barium hafnate or barium tin oxide and the compound semiconductor layer is indium phosphide or gallium indium arsenide or aluminum indium arsenide
- substantial matching of crystal lattice constants can be achieved by rotating the orientation of the grown crystal layer by 45° with respect to the host oxide crystal.
- a crystalline semiconductor buffer layer between the host oxide and the grown monocrystalline material layer can be used to reduce strain in the grown monocrystalline material layer that might result from small differences in lattice constants. Better crystalline quality in the grown monocrystalline material layer can thereby be achieved.
- the following example illustrates a process, in accordance with one embodiment of the invention, for fabricating a semiconductor structure such as the structures depicted in FIGS. 1 - 3.
- the process starts by providing a monocrystalline semiconductor substrate comprising silicon or germanium.
- the semiconductor substrate is a silicon wafer having a (100) orientation.
- the substrate is preferably oriented on axis or, at most, about 4° off axis.
- At least a portion of the semiconductor substrate has a bare surface, although other portions of the substrate, as described below, may encompass other structures.
- the term "bare" in this context means that the surface in the portion of the substrate has been cleaned to remove any oxides, contaminants, or other foreign material.
- bare silicon is highly reactive and readily forms a native oxide.
- the term "bare" is intended to encompass such a native oxide.
- a thin silicon oxide may also be intentionally grown on the semiconductor substrate, although such a grown oxide is not essential to the process in accordance with the invention.
- the native oxide layer In order to epitaxially grow a monocrystalline oxide layer overlying the monocrystalline substrate, the native oxide layer must first be removed to expose the crystalline structure of the underlying substrate. The following process is preferably carried out by molecular beam epitaxy (MBE), although other epitaxial processes may also be used in accordance with the present invention.
- MBE molecular beam epitaxy
- the native oxide can be removed by first thermally depositing a thin layer of strontium, barium, a combination of strontium and barium, or other alkaline earth metals or combinations of alkaline earth metals in an MBE apparatus.
- the substrate is then heated to a temperature of about 850° C to cause the strontium to react with the native silicon oxide layer.
- the strontium serves to reduce the silicon oxide to leave a silicon oxide-free surface.
- the resultant surface which exhibits an ordered 2x1 structure, includes strontium, oxygen, and silicon.
- the ordered 2x1 structure forms a template for the ordered growth of an overlying layer of a monocrystalline oxide.
- the template provides the necessary chemical and physical properties to nucleate the crystalline growth of an overlying layer.
- the native silicon oxide can be converted and the substrate surface can be prepared for the growth of a monocrystalline oxide layer by depositing an alkaline earth metal oxide, such as strontium oxide, strontium barium oxide, or barium oxide, onto the substrate surface by MBE at a low temperature and by subsequently heating the structure to a temperature of about 850°C. At this temperature a solid state reaction takes place between the strontium oxide and the native silicon oxide causing the reduction of the native silicon oxide and leaving an ordered 2x1 structure with strontium, oxygen, and silicon remaining on the substrate surface. Again, this forms a template for the subsequent growth of an ordered monocrystalline oxide layer.
- an alkaline earth metal oxide such as strontium oxide, strontium barium oxide, or barium oxide
- the substrate is cooled to a temperature in the range of about 200-800°C and a layer of strontium titanate is grown on the template layer by molecular beam epitaxy.
- the MBE process is initiated by opening shutters in the MBE apparatus to expose strontium, titanium and oxygen sources.
- the ratio of strontium and titanium is approximately 1 :1.
- the partial pressure of oxygen is initially set at a minimum value to grow stoichiometric strontium titanate at a growth rate of about 0.3-0.5 nm per minute. After initiating growth of the strontium titanate, the partial pressure of oxygen is increased above the initial minimum value.
- the overpressure of oxygen causes the growth of an amorphous silicon oxide layer at the interface between the underlying substrate and the growing strontium titanate layer.
- the growth of the silicon oxide layer results from the diffusion of oxygen through the growing strontium titanate layer to the interface where the oxygen reacts with silicon at the surface of the underlying substrate.
- the strontium titanate grows as an ordered (100) monocrystal with the (100) crystalline orientation rotated by 45° with respect to the underlying substrate. Strain that otherwise might exist in the strontium titanate layer because of the small mismatch in lattice constant between the silicon substrate and the growing crystal is relieved in the amorphous silicon oxide intermediate layer.
- the monocrystalline strontium titanate is capped by a template layer that is conducive to the subsequent growth of an epitaxial layer of a desired monocrystalline material.
- the MBE growth of the strontium titanate monocrystalline layer can be capped by terminating the growth with 1-2 monolayers of titanium, 1-2 monolayers of titanium-oxygen or with 1-2 monolayers of strontium-oxygen.
- arsenic is deposited to form a Ti-As bond, a Ti- O-As bond or a Sr-O-As.
- gallium arsenide monocrystalline layer is subsequently introduced to the reaction with the arsenic and gallium arsenide forms.
- gallium can be deposited on the capping layer to form a Sr-O-Ga bond, and arsenic is subsequently introduced with the gallium to form the GaAs.
- FIG. 5 is a high resolution Transmission Electron Micrograph (TEM) of semiconductor material manufactured in accordance with one embodiment of the present invention.
- Single crystal SrTiO 3 accommodating buffer layer 24 was grown epitaxially on silicon substrate 22. During this growth process, amorphous interfacial layer 28 is formed which relieves strain due to lattice mismatch.
- GaAs compound semiconductor layer 26 was then grown epitaxially using template layer 30.
- FIG. 6 illustrates an x-ray diffraction spectrum taken on a structure including GaAs monocrystalline layer 26 comprising GaAs grown on silicon substrate 22 using accommodating buffer layer 24.
- the peaks in the spectrum indicate that both the accommodating buffer layer 24 and GaAs compound semiconductor layer 26 are single crystal and (100) orientated.
- the structure illustrated in FIG. 2 can be formed by the process discussed above with the addition of an additional buffer layer deposition step.
- the additional buffer layer 32 is formed overlying the template layer before the deposition of the monocrystalline material layer. If the buffer layer is a monocrystalline material comprising a compound semiconductor superlattice, such a superlattice can be deposited, by MBE for example, on the template described above. If instead the buffer layer is a monocrystalline material layer comprising a layer of germanium, the process above is modified to cap the strontium titanate monocrystalline layer with a final layer of either strontium or titanium and then by depositing germanium to react with the strontium or titanium. The germanium buffer layer can then be deposited directly on this template. Structure 34, illustrated in FIG.
- the accommodating buffer layer may be formed by growing an accommodating buffer layer, forming an amorphous oxide layer over substrate 22, and growing semiconductor layer 38 over the accommodating buffer layer, as described above.
- the accommodating buffer layer and the amorphous oxide layer are then exposed to an anneal process sufficient to change the crystalline structure of the accommodating buffer layer from monocrystalline to amorphous, thereby forming an amorphous layer such that the combination of the amorphous oxide layer and the now amorphous accommodating buffer layer form a single amorphous oxide layer 36.
- Layer 26 is then subsequently grown over layer 38.
- the anneal process may be carried out subsequent to growth of layer 26.
- layer 36 is formed by exposing substrate 22, the accommodating buffer layer, the amorphous oxide layer, and monocrystalline layer 38 to a rapid thermal anneal process with a peak temperature of about 700°C to about 1000°C and a process time of about 5 seconds to about 10 minutes.
- suitable anneal processes may be employed to convert the accommodating buffer layer to an amorphous layer in accordance with the present invention.
- laser annealing, electron beam annealing, or "conventional" thermal annealing processes in the proper environment
- an overpressure of one or more constituents of layer 30 may be required to prevent degradation of layer 38 during the anneal process.
- the anneal environment preferably includes an overpressure of arsenic to mitigate degradation of layer 38.
- layer 38 of structure 34 may include any materials suitable for either of layers 32 or 26. Accordingly, any deposition or growth methods described in connection with either layer 32 or 26, may be employed to deposit layer 38.
- FIG. 7 is a high resolution TEM of semiconductor material manufactured in accordance with the embodiment of the invention illustrated in FIG. 3.
- a single crystal SrTiO 3 accommodating buffer layer was grown epitaxially on silicon substrate 22.
- an amorphous interracial layer forms as described above.
- additional monocrystalline layer 38 comprising a compound semiconductor layer of GaAs is formed above the accommodating buffer layer and the accommodating buffer layer is exposed to an anneal process to form amorphous oxide layer 36.
- FIG. 8 illustrates an x-ray diffraction spectrum taken on a structure including additional monocrystalline layer 38 comprising a GaAs compound semiconductor layer and amorphous oxide layer 36 formed on silicon substrate 22.
- the peaks in the spectrum indicate that GaAs compound semiconductor layer 38 is single crystal and (100) orientated and the lack of peaks around 40 to 50 degrees indicates that layer 36 is amorphous.
- the process described above illustrates a process for forming a semiconductor structure including a silicon substrate, an overlying oxide layer, and a monocrystalline material layer comprising a gallium arsenide compound semiconductor layer by the process of molecular beam epitaxy.
- the process can also be carried out by the process of chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), migration enhanced epitaxy (MEE), atomic layer epitaxy (ALE), physical vapor deposition (PVD), chemical solution deposition (CSD), pulsed laser deposition (PLD), or the like.
- CVD chemical vapor deposition
- MOCVD metal organic chemical vapor deposition
- MEE migration enhanced epitaxy
- ALE atomic layer epitaxy
- PVD physical vapor deposition
- CSD chemical solution deposition
- PLD pulsed laser deposition
- other monocrystalline accommodating buffer layers such as alkaline earth metal titanates, zirconates, hafnates, tantalates, vanadates, ruthenates, and niobates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide can also be grown.
- MBE other monocrystalline material layers comprising other
- each of the variations of monocrystalline material layer and monocrystalline oxide accommodating buffer layer uses an appropriate template for initiating the growth of the monocrystalline material layer.
- the accommodating buffer layer is an alkaline earth metal zirconate
- the oxide can be capped by a thin layer of zirconium.
- the deposition of zirconium can be followed by the deposition of arsenic or phosphorus to react with the zirconium as a precursor to depositing indium gallium arsenide, indium aluminum arsenide, or indium phosphide respectively.
- the monocrystalline oxide accommodating buffer layer is an alkaline earth metal hafnate, the oxide layer can be capped by a thin layer of hafnium.
- hafnium is followed by the deposition of arsenic or phosphorous to react with the hafnium as a precursor to the growth of an indium gallium arsenide, indium aluminum arsenide, or indium phosphide layer, respectively.
- strontium titanate can be capped with a layer of strontium or strontium and oxygen and barium titanate can be capped with a layer of barium or barium and oxygen.
- each of these depositions can be followed by the deposition of arsenic or phosphorus to react with the capping material to form a template for the deposition of a monocrystalline material layer comprising compound semiconductors such as indium gallium arsenide, indium aluminum arsenide, or indium phosphide.
- a device structure in accordance with another embodiment of the invention is illustrated schematically in cross-section in FIGS. 9-12.
- this embodiment of the invention involves the process of forming a compliant substrate utilizing the epitaxial growth of single crystal oxides, such as the formation of accommodating buffer layer 24 previously described with reference to FIGS. 1 and 2 and amorphous layer 36 previously described with reference to FIG. 3, and the formation of a template layer 30.
- the embodiment illustrated in FIGS. 9-12 utilizes a template that includes a surfactant to facilitate layer-by-layer monocrystalline material growth.
- an amorphous intermediate layer 58 is grown on substrate 52 at the interface between substrate 52 and a growing accommodating buffer layer 54, which is preferably a monocrystalline crystal oxide layer, by the oxidation of substrate 52 during the growth of layer 54.
- Layer 54 is preferably a monocrystalline oxide material such as a monocrystalline layer of Sr z Ba 1-z TiO 3 where z ranges from 0 to 1.
- layer 54 may also comprise any of those compounds previously described with reference layer 24 in FIGS. 1-2 and any of those compounds previously described with reference to layer 36 in FIG. 3 which is formed from layers 24 and 28 referenced in FIGS. 1 and 2.
- Layer 54 is grown with a strontium (Sr) terminated surface represented in FIG. 9 by hatched line 55 which is followed by the addition of a template layer 60 which includes a surfactant layer 61 and capping layer 63 as illustrated in FIGS. 10 and 11.
- Surfactant layer 61 may comprise, but is not limited to, elements such as Al, In and Ga, but will be dependent upon the composition of layer 54 and the overlying layer of monocrystalline material for optimal results.
- aluminum (Al) is used for surfactant layer 61 and functions to modify the surface and surface energy of layer 54.
- surfactant layer 61 is epitaxially grown, to a thickness of one to two monolayers, over layer 54 as illustrated in FIG.
- MBE molecular beam epitaxy
- CVD chemical vapor deposition
- MOCVD metal organic chemical vapor deposition
- MEE migration enhanced epitaxy
- ALE atomic layer epitaxy
- PVD physical vapor deposition
- CSD chemical solution deposition
- PLD pulsed laser deposition
- Surfactant layer 61 is then exposed to a Group V element such as arsenic, for example, to form capping layer 63 as illustrated in FIG. 11.
- Surfactant layer 61 may be exposed to a number of materials to create capping layer 63 such as elements which include, but are not limited to, As, P, Sb and N.
- Surfactant layer 61 and capping layer 63 combine to form template layer 60.
- Monocrystalline material layer 66 which in this example is a compound semiconductor such as GaAs, is then deposited via MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, and the like to form the final structure illustrated in FIG. 12.
- FIGS. 13-16 illustrate possible molecular bond structures for a specific example of a compound semiconductor structure formed in accordance with the embodiment of the invention illustrated in FIGS. 9-12. More specifically, FIGS. 13-16 illustrate the growth of GaAs (layer 66) on the strontium terminated surface of a strontium titanate monocrystalline oxide (layer 54) using a surfactant containing template (layer 60). The growth of a monocrystalline material layer 66 such as GaAs on an accommodating buffer layer 54 such as a strontium titanium oxide over amorphous interface layer 58 and substrate layer 52, both of which may comprise materials previously described with reference to layers 28 and 22, respectively in FIGS.
- a monocrystalline material layer 66 such as GaAs
- an accommodating buffer layer 54 such as a strontium titanium oxide
- substrate layer 52 both of which may comprise materials previously described with reference to layers 28 and 22, respectively in FIGS.
- FIG. 13 illustrates the molecular bond structure of a strontium terminated surface of a strontium titanate monocrystalline oxide layer.
- An aluminum surfactant layer is deposited on top of the strontium terminated surface and bonds with that surface as illustrated in FIG. 14, which reacts to form a capping layer comprising a monolayer of AI 2 Sr having the molecular bond structure illustrated in FIG. 14 which forms a diamond-like structure with an sp 3 hybrid terminated surface that is compliant with compound semiconductors such as GaAs.
- the structure is then exposed to As to form a layer of AIAs as shown in FIG. 15.
- GaAs is then deposited to complete the molecular bond structure illustrated in FIG. 16 which has been obtained by 2D growth.
- the GaAs can be grown to any thickness for forming other semiconductor structures, devices, or integrated circuits.
- Alkaline earth metals such as those in Group IIA are those elements preferably used to form the capping surface of the monocrystalline oxide layer 54 because they are capable of forming a desired molecular structure with aluminum.
- a surfactant containing template layer aids in the formation of a compliant substrate for the monolithic integration of various material layers including those comprised of Group lll-V compounds to form high quality semiconductor structures, devices and integrated circuits.
- a surfactant containing template may be used for the monolithic integration of a monocrystalline material layer such as a layer comprising Germanium (Ge), for example, to form high efficiency photocells.
- FIGS. 17-20 the formation of a device structure in accordance with still another embodiment of the invention is illustrated in cross-section.
- This embodiment utilizes the formation of a compliant substrate which relies on the epitaxial growth of single crystal oxides on silicon followed by the epitaxial growth of single crystal silicon onto the oxide.
- An accommodating buffer layer 74 such as a monocrystalline oxide layer is first grown on a substrate layer 72, such as silicon, with an amorphous interface layer 78 as illustrated in FIG. 17.
- Monocrystalline oxide layer 74 may be comprised of any of those materials previously discussed with reference to layer 24 in FIGS. 1 and 2, while amorphous interface layer 78 is preferably comprised of any of those materials previously described with reference to the layer 28 illustrated in FIGS. 1 and 2.
- a silicon layer 81 is deposited over monocrystalline oxide layer 74 via MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, and the like as illustrated in FIG. 18 with a thickness of a few hundred Angstroms but preferably with a thickness of about 50 Angstroms.
- Monocrystalline oxide layer 74 preferably has a thickness of about 20 to 100 Angstroms.
- Rapid thermal annealing is then conducted in the presence of a carbon source such as acetylene or methane, for example at a temperature within a range of about 800°C to 1000°C to form capping layer 82 and silicate amorphous layer 86.
- a carbon source such as acetylene or methane
- other suitable carbon sources may be used as long as the rapid thermal annealing step functions to amorphize the monocrystalline oxide layer 74 into a silicate amorphous layer 86 and carbonize the top silicon layer 81 to form capping layer 82 which in this example would be a silicon carbide (SiC) layer as illustrated in FIG. 19.
- SiC silicon carbide
- the formation of amorphous layer 86 is similar to the formation of layer 36 illustrated in FIG. 3 and may comprise any of those materials described with reference to layer 36 in FIG. 3 but the preferable material will be dependent upon the capping layer 82 used for silicon layer 81.
- a compound semiconductor layer 96 such as gallium nitride (GaN) is grown over the SiC surface by way of MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, or the like to form a high quality compound semiconductor material for device formation. More specifically, the deposition of GaN and GaN based systems such as GalnN and AIGaN will result in the formation of dislocation nets confined at the silicon/amorphous region.
- the resulting nitride containing compound semiconductor material may comprise elements from groups III, IV and V of the periodic table and is defect free.
- this embodiment of the invention possesses a one step formation of the compliant substrate containing a SiC top surface and an amorphous layer on a Si surface. More specifically, this embodiment of the invention uses an intermediate single crystal oxide layer that is amorphosized to form a silicate layer which adsorbs the strain between the layers. Moreover, unlike past use of a SiC substrate, this embodiment of the invention is not limited by wafer size which is usually less than 50mm in diameter for prior art SiC substrates.
- the monolithic integration of nitride containing semiconductor compounds containing group lll-V nitrides and silicon devices can be used for high temperature RF applications and optoelectronics.
- FIGS. 21-23 schematically illustrate, in cross-section, the formation of another embodiment of a device structure in accordance with the invention.
- This embodiment includes a compliant layer that functions as a transition layer that uses clathrate or Zintl type bonding. More specifically, this embodiment utilizes an intermetallic template layer to reduce the surface energy of the interface between material layers thereby allowing for two dimensional layer by layer growth.
- the structure illustrated in FIG. 21 includes a monocrystalline substrate 102, an amorphous interface layer 108 and an accommodating buffer layer 104.
- Amorphous interface layer 108 is formed on substrate 102 at the interface between substrate 102 and accommodating buffer layer 104 as previously described with reference to FIGS. 1 and 2.
- Amorphous interface layer 108 may comprise any of those materials previously described with reference to amorphous interface layer 28 in FIGS. 1 and 2.
- Substrate 102 is preferably silicon but may also comprise any of those materials previously described with reference to substrate 22 in FIGS. 1-3.
- a template layer 130 is deposited over accommodating buffer layer 104 as illustrated in FIG. 22 and preferably comprises a thin layer of Zintl type phase material composed of metals and metalloids having a great deal of ionic character.
- template layer 130 is deposited by way of MBE, CVD, MOCVD, MEE, ALE, PVD, CSD, PLD, or the like to achieve a thickness of one monolayer.
- Template layer 130 functions as a "soft" layer with non-directional bonding but high crystallinity which absorbs stress build up between layers having lattice mismatch.
- Materials for template 130 may include, but are not limited to, materials containing Si, Ga, In, and Sb such as, for example, AISr 2 , (MgCaYb)Ga 2 , (Ca,Sr,Eu,Yb)ln 2 , BaGe 2 As, and SrSn 2 As 2
- a monocrystalline material layer 126 is epitaxially grown over template layer 130 to achieve the final structure illustrated in FIG. 23.
- an SrAI 2 layer may be used as template layer 130 and an appropriate monocrystalline material layer 126 such as a compound semiconductor material GaAs is grown over the SrAI 2 .
- the Al-Ti (from the accommodating buffer layer of layer of Sr z Ba ⁇ -z TiO 3 where z ranges from 0 to 1 ) bond is mostly metallic while the Al-As (from the GaAs layer) bond is weakly covalent.
- the Sr participates in two distinct types of bonding with part of its electric charge going to the oxygen atoms in the lower accommodating buffer layer 104 comprising Sr z Ba-i -z TiO 3 to participate in ionic bonding and the other part of its valence charge being donated to Al in a way that is typically carried out with Zintl phase materials.
- the amount of the charge transfer depends on the relative electronegativity of elements comprising the template layer 130 as well as on the interatomic distance.
- Al assumes an sp 3 hybridization and can readily form bonds with monocrystalline material layer 126, which in this example, comprises compound semiconductor material GaAs.
- the compliant substrate produced by use of the Zintl type template layer used in this embodiment can absorb a large strain without a significant energy cost.
- the bond strength of the Al is adjusted by changing the volume of the SrAI 2 layer thereby making the device tunable for specific applications which include the monolithic integration of lll-V and Si devices and the monolithic integration of high-k dielectric materials for CMOS technology.
- the present invention includes structures and methods for fabricating material layers which form semiconductor structures, devices and integrated circuits including other layers such as metal and non-metal layers. More specifically, the invention includes structures and methods for forming a compliant substrate which is used in the fabrication of semiconductor structures, devices and integrated circuits and the material layers suitable for fabricating those structures, devices, and integrated circuits.
- a monocrystalline semiconductor or compound semiconductor wafer can be used in forming monocrystalline material layers over the wafer.
- the wafer is essentially a "handle" wafer used during the fabrication of semiconductor electrical components within a monocrystalline layer overlying the wafer. Therefore, electrical components can be formed within semiconductor materials over a wafer of at least approximately 200 millimeters in diameter and possibly at least approximately 300 millimeters.
- a relatively inexpensive "handle" wafer overcomes the fragile nature of compound semiconductor or other monocrystalline material wafers by placing them over a relatively more durable and easy to fabricate base material. Therefore, an integrated circuit can be formed such that all electrical components, and particularly all active electronic devices, can be formed within or using the monocrystalline material layer even though the substrate itself may include a monocrystalline semiconductor material. Fabrication costs for compound semiconductor devices and other devices employing non-silicon monocrystalline materials should decrease because larger substrates can be processed more economically and more readily compared to the relatively smaller and more fragile substrates (e.g. conventional compound semiconductor wafers).
- FIG. 24 illustrates schematically, in cross section, a device structure 50 in accordance with a further embodiment.
- Device structure 50 includes a monocrystalline semiconductor substrate 52, preferably a monocrystalline silicon wafer.
- Monocrystalline semiconductor substrate 52 includes two regions, 53 and 57.
- An electrical semiconductor component generally indicated by the dashed line 56 is formed, at least partially, in region 53.
- Electrical component 56 can be a resistor, a capacitor, an active semiconductor component such as a diode or a transistor or an integrated circuit such as a CMOS integrated circuit.
- electrical semiconductor component 56 can be a CMOS integrated circuit configured to perform digital signal processing or another function for which silicon integrated circuits are well suited.
- the electrical semiconductor component in region 53 can be formed by conventional semiconductor processing as well known and widely practiced in the semiconductor industry.
- a layer of insulating material 59 such as a layer of silicon dioxide or the like may overlie electrical semiconductor component 56. Insulating material 59 and any other layers that may have been formed or deposited during the processing of semiconductor component 56 in region 53 are removed from the surface of region 57 to provide a bare silicon surface in that region. As is well known, bare silicon surfaces are highly reactive and a native silicon oxide layer can quickly form on the bare surface. A layer of barium or barium and oxygen is deposited onto the native oxide layer on the surface of region 57 and is reacted with the oxidized surface to form a first template layer (not shown). In accordance with one embodiment, a monocrystalline oxide layer is formed overlying the template layer by a process of molecular beam epitaxy.
- Reactants including barium, titanium and oxygen are deposited onto the template layer to form the monocrystalline oxide layer.
- the partial pressure of oxygen is kept near the minimum necessary to fully react with the barium and titanium to form monocrystalline barium titanate layer.
- the partial pressure of oxygen is then increased to provide an overpressure of oxygen and to allow oxygen to diffuse through the growing monocrystalline oxide layer.
- the oxygen diffusing through the barium titanate reacts with silicon at the surface of region 57 to form an amorphous layer of silicon oxide 62 on second region 57 and at the interface between silicon substrate 52 and the monocrystalline oxide layer 65.
- Layers 65 and 62 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer.
- the step of depositing the monocrystalline oxide layer 65 is terminated by depositing a second template layer 64, which can be 1-10 monolayers of titanium, barium, barium and oxygen, or titanium and oxygen.
- a layer 66 of a monocrystalline compound semiconductor material is then deposited overlying second template layer 64 by a process of molecular beam epitaxy.
- the deposition of layer 66 is initiated by depositing a layer of arsenic onto template 64. This initial step is followed by depositing gallium and arsenic to form monocrystalline gallium arsenide 66.
- strontium can be substituted for barium in the above example.
- a semiconductor component is formed in compound semiconductor layer 66.
- Semiconductor component 68 can be formed by processing steps conventionally used in the fabrication of gallium arsenide or other lll-V compound semiconductor material devices.
- Semiconductor component 68 can be any active or passive component, and preferably is a semiconductor laser, light emitting diode, photodetector, heterojunction bipolar transistor (HBT), high frequency MESFET, or other component that utilizes and takes advantage of the physical properties of compound semiconductor materials.
- HBT heterojunction bipolar transistor
- a metallic conductor schematically indicated by the line 70 can be formed to electrically couple device 68 and device 56, thus implementing an integrated device that includes at least one component formed in silicon substrate 52 and one device formed in monocrystalline compound semiconductor material layer 66.
- illustrative structure 50 has been described as a structure formed on a silicon substrate 52 and having a barium (or strontium) titanate layer 65 and a gallium arsenide layer 66, similar devices can be fabricated using other substrates, monocrystalline oxide layers and other compound semiconductor layers as described elsewhere in this disclosure.
- FIG. 25 illustrates a semiconductor structure 71 in accordance with a further embodiment.
- Structure 71 includes a monocrystalline semiconductor substrate 74 such as a monocrystalline silicon wafer that includes a region 75 and a region 76.
- An electrical component schematically illustrated by the dashed line 79 is formed in region 75 using conventional silicon device processing techniques commonly used in the semiconductor industry.
- a monocrystalline oxide layer 80 and an intermediate amorphous silicon oxide layer 83 are formed overlying region 76 of substrate 73.
- a template layer 84 and subsequently a monocrystalline semiconductor layer 87 are formed overlying monocrystalline oxide layer 80.
- an additional monocrystalline oxide layer 88 is formed overlying layer 87 by process steps similar to those used to form layer 80, and an additional monocrystalline semiconductor layer 90 is formed overlying monocrystalline oxide layer 88 by process steps similar to those used to form layer 87.
- at least one of layers 87 and 90 are formed from a compound semiconductor material.
- Layers 80 and 83 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer.
- a semiconductor component generally indicated by a dashed line 92 is formed at least partially in monocrystalline semiconductor layer 87.
- semiconductor component 92 may include a field effect transistor having a gate dielectric formed, in part, by monocrystalline oxide layer 88.
- monocrystalline semiconductor layer 90 can be used to implement the gate electrode of that field effect transistor.
- monocrystalline semiconductor layer 87 is formed from a group lll-V compound and semiconductor component 92 is a radio frequency amplifier that takes advantage of the high mobility characteristic of group lll-V component materials.
- an electrical interconnection schematically illustrated by the line 94 electrically interconnects component 79 and component 92. Structure 71 thus integrates components that take advantage of the unique properties of the two monocrystalline semiconductor materials.
- the illustrative composite semiconductor structure or integrated circuit 103 shown in FIGs. 26-30 includes a compound semiconductor portion 1022, a bipolar portion 1024, and a MOS portion 1026.
- a p-type doped, monocrystalline silicon substrate 110 is provided having a compound semiconductor portion 1022, a bipolar portion 1024, and an MOS portion 1026.
- the monocrystalline silicon substrate 110 is doped to form an N + buried region 1102.
- a lightly p- type doped epitaxial monocrystalline silicon layer 1104 is then formed over the buried region 1102 and the substrate 110.
- a doping step is then performed to create a lightly n-type doped drift region 1117 above the N + buried region 1102.
- the doping step converts the dopant type of the lightly p-type epitaxial layer within a section of the bipolar region 1024 to a lightly n-type monocrystalline silicon region.
- a field isolation region 1106 is then formed between the bipolar portion 1024 and the MOS portion 1026.
- a gate dielectric layer 1110 is formed over a portion of the epitaxial layer 1104 within MOS portion 1026, and the gate electrode 1112 is then formed over the gate dielectric layer 1110.
- Sidewall spacers 1115 are formed along vertical sides of the gate electrode 1112 and gate dielectric layer 1110.
- a p-type dopant is introduced into the drift region 1117 to form an active or intrinsic base region 1114.
- An n-type, deep collector region 1108 is then formed within the bipolar portion 1024 to allow electrical connection to the buried region 1102.
- Selective n-type doping is performed to form N + doped regions 1116 and the emitter region 1120.
- N + doped regions 1116 are formed within layer 1104 along adjacent sides of the gate electrode 1112 and are source, drain, or source/drain regions for the MOS transistor.
- the N + doped regions 1116 and emitter region 1120 have a doping concentration of at least 1 E19 atoms per cubic centimeter to allow ohmic contacts to be formed.
- a p-type doped region is formed to create the inactive or extrinsic base region 1118 which is a P + doped region (doping concentration of at least 1 E19 atoms per cubic centimeter).
- processing steps have been performed but are not illustrated or further described, such as the formation of well regions, threshold adjusting implants, channel punch through prevention implants, field punch through prevention implants, as well as a variety of masking layers.
- the formation of the device up to this point in the process is performed using conventional steps. As illustrated, a standard N-channel MOS transistor has been formed within the MOS region 1026, and a vertical NPN bipolar transistor has been formed within the bipolar portion 1024. As of this point, no circuitry has been formed within the compound semiconductor portion 1022.
- the accommodating buffer layer 124 is then formed over the substrate 110 as illustrated in FIG. 27.
- the accommodating buffer layer will form as a monocrystalline layer over the properly prepared (i.e., having the appropriate template layer) bare silicon surface in portion 1022.
- the portion of layer 124 that forms over portions 1024 and 1026 may be polycrystalline or amorphous because it is formed over a material that is not monocrystalline, and therefore, does not nucleate monocrystalline growth.
- the accommodating buffer layer 124 typically is a monocrystalline metal oxide or nitride layer and typically has a thickness in a range of approximately 2-100 nanometers. In one particular embodiment, the accommodating buffer layer is approximately 5-15 nm thick.
- an amorphous intermediate layer 122 is formed along the uppermost silicon surfaces of the integrated circuit 103.
- This amorphous intermediate layer 122 typically includes an oxide of silicon and has a thickness and range of approximately 1-5 nm. In one particular embodiment, the thickness is approximately 2 nm.
- a template layer 125 is then formed and has a thickness in a range of approximately one to ten monolayers of a material.
- the material includes titanium-arsenic, strontium-oxygen-arsenic, or other similar materials as previously described with respect to FIGS. 1-5.
- Layers 122 and 124 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer.
- a monocrystalline compound semiconductor layer 132 is then epitaxially grown overlying the monocrystalline portion of accommodating buffer layer 124 (or over the amorphous accommodating layer if the annealing process described above has been carried out) as shown in FIG. 28.
- the portion of layer 132 that is grown over portions of layer 124 that are not monocrystalline may be polycrystalline or amorphous.
- the monocrystalline compound semiconductor layer can be formed by a number of methods and typically includes a material such as gallium arsenide, aluminum gallium arsenide, indium phosphide, or other compound semiconductor materials as previously mentioned.
- the thickness of the layer is in a range of approximately 1-5,000 nm, and more preferably 100-500 nm.
- each of the elements within the template layer are also present in the accommodating buffer layer 124, the monocrystalline compound semiconductor material 132, or both. Therefore, the delineation between the template layer 125 and its two immediately adjacent layers disappears during processing. Therefore, when a transmission electron microscopy (TEM) photograph is taken, an interface between the accommodating buffer layer 124 and the monocrystalline compound semiconductor layer 132 is seen.
- TEM transmission electron microscopy
- sections of the compound semiconductor layer 132 and the accommodating buffer layer 124 are removed from portions overlying the bipolar portion 1024 and the MOS portion 1026 as shown in FIG. 29.
- an insulating layer 142 is then formed over the substrate 110.
- the insulating layer 142 can include a number of materials such as oxides, nitrides, oxynitrides, low-k dielectrics, or the like. As used herein, low-k is a material having a dielectric constant no higher than approximately 3.5.
- a transistor 144 is then formed within the monocrystalline compound semiconductor portion 1022.
- a gate electrode 148 is then formed on the monocrystalline compound semiconductor layer 132.
- Doped regions 146 are then formed within the monocrystalline compound semiconductor layer 132.
- the transistor 144 is a metal-semiconductor field-effect transistor (MESFET). If the MESFET is an n-type MESFET, the doped regions 146 and monocrystalline compound semiconductor layer 132 are also n-type doped. If a p-type MESFET were to be formed, then the doped regions 146 and monocrystalline compound semiconductor layer 132 would have just the opposite doping type. The heavier doped (N + ) regions 146 allow ohmic contacts to be made to the monocrystalline compound semiconductor layer 132.
- MESFET metal-semiconductor field-effect transistor
- This particular embodiment includes an n-type MESFET, a vertical NPN bipolar transistor, and a planar n-channel MOS transistor.
- transistors including P-channel MOS transistors, p-type vertical bipolar transistors, p-type MESFETs, and combinations of vertical and planar transistors, can be used.
- other electrical components such as resistors, capacitors, diodes, and the like, may be formed in one or more of the portions 1022, 1024, and 1026.
- An insulating layer 152 is formed over the substrate 110.
- the insulating layer 152 may include an etch-stop or polish- stop region that is not illustrated in FIG. 30.
- a second insulating layer 154 is then formed over the first insulating layer 152. Portions of layers 154, 152, 142, 124, and 122 are removed to define contact openings where the devices are to be interconnected. Interconnect trenches are formed within insulating layer 154 to provide the lateral connections between the contacts.
- interconnect 1562 connects a source or drain region of the n-type MESFET within portion 1022 to the deep collector region 1108 of the NPN transistor within the bipolar portion 1024.
- the emitter region 1120 of the NPN transistor is connected to one of the doped regions 1116 of the n- channel MOS transistor within the MOS portion 1026.
- the other doped region 1116 is electrically connected to other portions of the integrated circuit that are not shown.
- a passivation layer 156 is formed over the interconnects 1562, 1564, and 1566 and insulating layer 154. Other electrical connections are made to the transistors as illustrated as well as to other electrical or electronic components within the integrated circuit 103 but are not illustrated in the FIGs. Further, additional insulating layers and interconnects may be formed as necessary to form the proper interconnections between the various components within the integrated circuit 103.
- active devices for both compound semiconductor and Group IV semiconductor materials can be integrated into a single integrated circuit. Because there is some difficulty in incorporating both bipolar transistors and MOS transistors within a same integrated circuit, it may be possible to move some of the components within bipolar portion into the compound semiconductor portion 1022 or the MOS portion 1024. Therefore, the requirement of special fabricating steps solely used for making a bipolar transistor can be eliminated. Therefore, there would only be a compound semiconductor portion and a MOS portion to the integrated circuit.
- an integrated circuit can be formed such that it includes an optical laser in a compound semiconductor portion and an optical interconnect (waveguide) to a MOS transistor within a Group IV semiconductor region of the same integrated circuit.
- FIGs. 31-37 include illustrations of one embodiment.
- FIG. 31 includes an illustration of a cross-section view of a portion of an integrated circuit 160 that includes a monocrystalline silicon wafer 161.
- An amorphous intermediate layer 162 and an accommodating buffer layer 164 similar to those previously described, have been formed over wafer 161.
- Layers 162 and 164 may be subject to an annealing process as described above in connection with FIG. 3 to form a single amorphous accommodating layer.
- the layers needed to form the optical laser will be formed first, followed by the layers needed for the MOS transistor.
- the lower mirror layer 166 includes alternating layers of compound semiconductor materials.
- the first, third, and fifth films within the optical laser may include a material such as gallium arsenide, and the second, fourth, and sixth films within the lower mirror layer 166 may include aluminum gallium arsenide or vice versa.
- Layer 168 includes the active region that will be used for photon generation.
- Upper mirror layer 170 is formed in a similar manner to the lower mirror layer 166 and includes alternating films of compound semiconductor materials.
- the upper mirror layer 170 may be p-type doped compound semiconductor materials
- the lower mirror layer 166 may be n-type doped compound semiconductor materials.
- Another accommodating buffer layer 172 similar to the accommodating buffer layer 164, is formed over the upper mirror layer 170.
- the accommodating buffer layers 164 and 172 may include different materials.
- Layer 172 may be subject to an annealing process as described above in connection with FIG. 3 to form an amorphous accommodating layer.
- a monocrystalline Group IV semiconductor layer 174 is formed over the accommodating buffer layer 172.
- the monocrystalline Group IV semiconductor layer 174 includes germanium, silicon germanium, silicon germanium carbide, or the like.
- the MOS portion is processed to form electrical components within this upper monocrystalline Group IV semiconductor layer 174.
- a field isolation region 171 is formed from a portion of layer 174.
- a gate dielectric layer 173 is formed over the layer 174, and a gate electrode 175 is formed over the gate dielectric layer 173.
- Doped regions 177 are source, drain, or source/drain regions for the transistor 181 , as shown.
- Sidewall spacers 179 are formed adjacent to the vertical sides of the gate electrode 175.
- Other components can be made within at least a part of layer 174. These other components include other transistors (n-channel or p- channel), capacitors, transistors, diodes, and the like.
- a monocrystalline Group IV semiconductor layer is epitaxially grown over one of the doped regions 177.
- An upper portion 184 is P+ doped, and a lower portion 182 remains substantially intrinsic (undoped) as illustrated in FIG. 32.
- the layer can be formed using a selective epitaxial process.
- an insulating layer (not shown) is formed over the transistor 181 and the field isolation region 171.
- the insulating layer is patterned to define an opening that exposes one of the doped regions 177.
- the selective epitaxial layer is formed without dopants.
- the entire selective epitaxial layer may be intrinsic, or a p-type dopant can be added near the end of the formation of the selective epitaxial layer.
- a doping step may be formed by implantation or by furnace doping. Regardless how the P+ upper portion 184 is formed, the insulating layer is then removed to form the resulting structure shown in FIG. 32.
- the next set of steps is performed to define the optical laser 180 as illustrated in FIG. 33.
- the field isolation region 171 and the accommodating buffer layer 172 are removed over the compound semiconductor portion of the integrated circuit. Additional steps are performed to define the upper mirror layer 170 and active layer 168 of the optical laser 180.
- the sides of the upper mirror layer 170 and active layer 168 are substantially coterminous.
- Contacts 186 and 188 are formed for making electrical contact to the upper mirror layer 170 and the lower mirror layer 166, respectively, as shown in FIG. 33.
- Contact 186 has an annular shape to allow light (photons) to pass out of the upper mirror layer 170 into a subsequently formed optical waveguide.
- An insulating layer 190 is then formed and patterned to define optical openings extending to the contact layer 186 and one of the doped regions 177 as shown in FIG. 34.
- the insulating material can be any number of different materials, including an oxide, nitride, oxynitride, low-k dielectric, or any combination thereof.
- a higher refractive index material 202 is then formed within the openings to fill them and to deposit the layer over the insulating layer 190 as illustrated in FIG. 35. With respect to the higher refractive index material 202, "higher" is in relation to the material of the insulating layer 190 (i.e., material 202 has a higher refractive index compared to the insulating layer 190).
- a relatively thin lower refractive index film (not shown) could be formed before forming the higher refractive index material 202.
- a hard mask layer 204 is then formed over the high refractive index layer 202. Portions of the hard mask layer 204, and high refractive index layer 202 are removed from portions overlying the opening and to areas closer to the sides of FIG. 35.
- a deposition procedure (possibly a dep-etch process) is performed to effectively create sidewalls sections 212.
- the sidewall sections 212 are made of the same material as material 202.
- the hard mask layer 204 is then removed, and a low refractive index layer 214 (low relative to material 202 and layer 212) is formed over the higher refractive index material 212 and 202 and exposed portions of the insulating layer 190.
- the dash lines in FIG. 36 illustrate the border between the high refractive index materials 202 and 212. This designation is used to identify that both are made of the same material but are formed at different times.
- a passivation layer 220 is then formed over the optical laser 180 and MOSFET transistor 181.
- interconnects can include other optical waveguides or may include metallic interconnects.
- other types of lasers can be formed.
- another type of laser can emit light (photons) horizontally instead of vertically. If light is emitted horizontally, the MOSFET transistor could be formed within the substrate 161 , and the optical waveguide would be reconfigured, so that the laser is properly coupled (optically connected) to the transistor.
- the optical waveguide can include at least a portion of the accommodating buffer layer. Other configurations are possible.
- the compound semiconductor portion may include light emitting diodes, photodetectors, diodes, or the like
- the Group IV semiconductor can include digital logic, memory arrays, and most structures that can be formed in conventional MOS integrated circuits.
- a monocrystalline Group IV wafer can be used in forming only compound semiconductor electrical components over the wafer.
- the wafer is essentially a "handle" wafer used during the fabrication of the compound semiconductor electrical components within a monocrystalline compound semiconductor layer overlying the wafer. Therefore, electrical components can be formed within lll-V or ll-VI semiconductor materials over a wafer of at least approximately 200 millimeters in diameter and possibly at least approximately 300 millimeters.
- a relatively inexpensive "handle" wafer overcomes the fragile nature of the compound semiconductor wafers by placing them over a relatively more durable and easy to fabricate base material.
- an integrated circuit can be formed such that all electrical components, and particularly all active electronic devices, can be formed within the compound semiconductor material even though the substrate itself may include a Group IV semiconductor material. Fabrication costs for compound semiconductor devices should decrease because larger substrates can be processed more economically and more readjly, compared to the relatively smaller and more fragile, conventional compound semiconductor wafers.
- a composite integrated circuit may include components that provide electrical isolation when electrical signals are applied to the composite integrated circuit.
- the composite integrated circuit may include a pair of optical components, such as an optical source component and an optical detector component.
- An optical source component may be a light generating semiconductor device, such as an optical laser (e.g., the optical laser illustrated in FIG. 33), a photo emitter, a diode, etc.
- An optical detector component may be a light-sensitive semiconductor junction device, such as a photodetector, a photodiode, a bipolar junction, a transistor, etc.
- a composite integrated circuit may include processing circuitry that is formed at least partly in the Group IV semiconductor portion of the composite integrated circuit.
- the processing circuitry is configured to communicate with circuitry external to the composite integrated circuit.
- the processing circuitry may be electronic circuitry, such as a microprocessor, RAM, logic device, decoder, etc.
- the composite integrated circuit may be provided with electrical signal connections with the external electronic circuitry.
- the composite integrated circuit may have internal optical communications connections for connecting the processing circuitry in the composite integrated circuit to the electrical connections with the external circuitry.
- Optical components in the composite integrated circuit may provide the optical communications connections which may electrically isolate the electrical signals in the communications connections from the processing circuitry. Together, the electrical and optical communications connections may be for communicating information, such as data, control, timing, etc.
- a pair of optical components (an optical source component and an optical detector component) in the composite integrated circuit may be configured to pass information.
- Information that is received or transmitted between the optical pair may be from or for the electrical communications connection between the external circuitry and the composite integrated circuit.
- the optical components and the electrical communications connection may form a communications connection between the processing circuitry and the external circuitry while providing electrical isolation for the processing circuitry.
- a plurality of optical component pairs may be included in the composite integrated circuit for providing a plurality of communications connections and for providing isolation.
- a composite integrated circuit receiving a plurality of data bits may include a pair of optical components for communication of each data bit.
- an optical source component in a pair of components may be configured to generate light (e.g., photons) based on receiving electrical signals from an electrical signal connection with the external circuitry.
- An optical detector component in the pair of components may be optically connected to the source component to generate electrical signals based on detecting light generated by the optical source component.
- Information that is communicated between the source and detector components may be digital or analog.
- An optical source component that is responsive to the on-board processing circuitry may be coupled to an optical detector component to have the optical source component generate an electrical signal for use in communications with external circuitry.
- a plurality of such optical component pair structures may be used for providing two-way connections.
- a first pair of optical components may be coupled to provide data communications and a second pair may be coupled for communicating synchronization information.
- optical detector components that are discussed below are discussed primarily in the context of optical detector components that have been formed in a compound semiconductor portion of a composite integrated circuit.
- the optical detector component may be formed in many suitable ways (e.g., formed from silicon, etc.).
- a composite integrated circuit will typically have an electric connection for a power supply and a ground connection.
- the power and ground connections are in addition to the communications connections that are discussed above.
- Processing circuitry in a composite integrated circuit may include electrically isolated communications connections and include electrical connections for power and ground. In most known applications, power supply and ground connections are usually well-protected by circuitry to prevent harmful external signals from reaching the composite integrated circuit.
- a communications ground may be isolated from the ground signal in communications connections that use a ground communications signal.
- the semiconductor structures described above include a monocrystalline semiconductor substrate and at least one monocrystalline semiconductor layer overlying the substrate.
- the monocrystalline semiconductor layer is formed of a dissimilar semiconductor material than that of the substrate, and in some cases the monocrystalline semiconductor layer is not well-suited to the formation of resistors or resistive regions.
- the embodiments of FIGS. 38-46 electrically couple a resistor or a resistive region in or on one of the semiconductor materials with one or more electrical components in or on the other semiconductor material.
- FIG. 38 illustrates a semiconductor structure 300 that includes a monocrystalline silicon substrate 302.
- the substrate 302 supports a set of layers including a perovskite oxide material layer 304, an amorphous oxide material layer 306, and a compound semiconductor material layer 308.
- the compound semiconductor material layer 308 is formed of a compound semiconductor material such as GaAs or InP.
- the lattice constant of the monocrystalline compound semiconductor material layer 308 is different from that of the monocrystalline silicon substrate 302, and the perovskite material layer 304 and the amorphous oxide material layer 306 accommodate this difference in lattice constant.
- a resistor 310 is formed in the silicon substrate 302, and this resistor 310 is electrically coupled with the compound silicon material layer 308 by first and second electrical conductors 312, 314.
- the electrical conductors 312, 314 take the form of conventional vias.
- the compound semiconductor material layer 308 carries first and second circuit components 316, 318, and these circuit components 316, 318 are electrically coupled with respective ones of the conductors 312, 314.
- electrical circuitry formed on or integrated into the compound semiconductor material layer 308 is electrically coupled by the conductors 312, 314 with the resistor 310 formed in the silicon substrate 302.
- the resistor 310 may be formed in many ways. For example, when the silicon substrate 302 is initially nonconductive, the silicon substrate 302 may be selectively doped in the region of the resistor 310 to provide the desired resistance between the conductors 312, 314. The resistance of the resistor 310 can be selected by adjusting the width, length, depth, and doping characteristics in the region of the resistor 310.
- the silicon substrate 302 is initially conductive, well-known implantation techniques can be used to make the silicon substrate less conductive in the region of the resistor 310. In this case, it may be preferable to form an insulating barrier around the resistor 310 and the conductors 312, 314 at their interface with the conductive silicon substrate 302.
- the substrate 302 can be formed as described above in conjunction with any of the substrate examples, including the monocrystalline substrates 22, 52, 72, and 102.
- the perovskite oxide material layer 304 can be replaced with materials such as any of those discussed above in the description of the accommodating buffer layers 24, 54, 74, and 104.
- the amorphous oxide material layer 306 can be formed in any of the ways described above in conjunction with the amorphous intermediate layers 28, 58, 78, 108.
- the compound semiconductor material layer 308 may be formed using any of the materials described above in conjunction with the monocrystalline material layers 26, 66, 96, 126.
- the circuit components 316, 318 are shown in FIG.
- FIG. 39 shows another semiconductor structure 320 that is similar to the structure 300 of FIG. 38 with respect to elements 302-312 and 316.
- the second circuit component 324 is formed as a trace or a ground plane on the side of the silicon substrate 302 opposite the first circuit component 316.
- the resistor 310 is electrically coupled to the second circuit component 324 by a second electrical conductor 322, which again may take the form of a via.
- FIG. 40 The embodiment of FIG. 40 is similar to that of FIG. 38 with respect to elements 302-308, 312 and 316.
- a resistor 332 is formed in the silicon substrate 302 in direct electrical contact with a second circuit component 334.
- the second circuit component 334 takes the form of a ground plane.
- the resistivity characteristics of the silicon substrate 302 are used to form a resistor that is electrically coupled with at least one circuit component overlying or integrated into the compound semiconductor material layer 308.
- the advantages of the silicon substrate with respect to the formation of resistors are combined with the advantages of the compound semiconductor material layer 308 with respect to the formation of circuit components.
- the silicon substrate 302 may be made highly resistive, the resistor 310, 332 may be made particularly small. This provides cost advantages to the overall circuit. Additionally, since the resistor 310, 332 has been moved off of the compound semiconductor layer 308, more area of the layer 308 is available for other circuit components. This provides a major cost saving.
- FIG. 41 provides a flowchart of a process for forming one of the embodiments of FIGS. 38-40.
- a monocrystalline silicon substrate is provided.
- a monocrystalline oxide film is deposited overlying the substrate in block 342.
- This monocrystalline oxide film can take many forms, but in this embodiment takes the form of a perovskite oxide film.
- an amorphous oxide interface layer is formed at an interface between the substrate and the perovskite oxide film. As taught earlier, this oxide layer begins to form even as the oxide film is being deposited.
- a monocrystalline compound semiconductor layer is epitaxially formed overlying the perovskite oxide film.
- a resistor is provided in the substrate. As discussed above, this can be accomplished by selectively doping or implanting the silicon substrate. Alternately, the resistor may be provided by the silicon substrate without any selective doping or implantation. Selective doping or implantation of the silicone substrate, when used, can be performed before the perovskite oxide film is formed in block 344.
- selective doping or implantation is performed after block 344; for example, the perovskite oxide film can be selectively removed in regions that are to be selectively doped or implanted.
- one or more conductors are formed extending between the resistor and the compound semiconductor layer. As shown in FIGS. 38-40, this conductor passes through the amorphous oxide material and the monocrystalline perovskite oxide material.
- the electrical conductors can pass completely through the layers 306, 304, 308 and partially through the substrate 302, as illustrated in the drawings.
- the conductors 312, 314 can pass completely through the silicon substrate 302; they may reach only the surface of the silicon substrate 302; or they may reach only the surface of the compound semiconductor material layer 308.
- the electrical conductors 312, 314 may be formed of any electrically conductive material. For example, gold, copper and ohmic metal can be used.
- FIGS. 42-46 relate to embodiments of this invention that include wave guide components.
- a semiconductor structure 400 includes a monocrystalline silicon substrate 402 that carries a set of overlying layers, including a perovskite oxide material layer 404, an amorphous oxide material layer 406, and a compound semiconductor material layer 408.
- the substrate 402 and the layers 406, 404, 408 can be formed of any of the materials discussed above in conjunction with the substrate 302 and the layers 306, 304, 308, respectively.
- the compound semiconductor material layer 408 carries a first waveguide component 410.
- FIG. 43 provides a plan view, and it can be seen there that the first waveguide component 410 includes a conductive metal strip. This conductive metal strip includes a conductive layer 422 in a region 420 in which the layers 404, 406, 408 have been removed, thereby exposing the upper surface of the silicon substrate 402 (FIG. 42).
- the compound semiconductor material layer 408 also supports at least one (and in this case two) second waveguide components 412, 414. Each of the waveguide components 410, 412, 414 extends along a length dimension 428, with the first waveguide component 410 disposed between the second waveguide components 412, 414.
- the first waveguide component 410 includes a first portion 424 and a second portion 426.
- the first and second portions 424, 426 are spaced along the length dimension 428.
- the term "spaced along” is intended broadly to denote axial separation, whether the first and second portions 424, 426 abut one another or not.
- the first portion 424 in this example overlies the compound semiconductor material layer 408, while the second portion 426 in this example directly overlies the silicon substrate 402. For this reason, the second portion 426 is positioned closer than the first portion 424 to the silicon substrate 402 and is more closely electrically coupled to the silicon substrate 402.
- the silicon substrate 402 is a lossy medium, and the close electrical coupling between the second portion 426 and the silicon substrate 402 increases the series resistance of the first waveguide component 410 selectively in the region of the second portion 426.
- FIG. 44 shows a semiconductor structure 440 that can be identical to that of FIG. 42 with respect to elements 402 through 408 and the first waveguide component 410. However, in the example of FIG. 44 at least one second waveguide component 442 is positioned on the opposite side of the silicon substrate 402 from the first waveguide component 410. As before, the semiconductor structure 440 provides increased series resistance for the first waveguide component 410 in the region of the second portion 426 as compared with the first portion 424.
- the semiconductor structure 450 of FIG. 45 is also similar to that of FIG. 42 with respect to the substrate 402 and the elements 404 through 410.
- an additional layer such as a dielectric layer 454 covers the first waveguide component 410, and at least one second waveguide component 452 overlies the dielectric layer 454.
- FIG. 46 describes one method for forming one of the semiconductor structures 400, 440, 450.
- Blocks 460, 462, 464, and 466 are identical to corresponding blocks 340, 342, 344, and 466, described above.
- a waveguide component is formed at least partially overlying the compound semiconductor layer, including a first portion and a second portion, wherein the second portion is more closely coupled with substrate than is the first portion.
- the second portion of the waveguide component is more closely coupled to the silicon substrate than the first portion by virtue of being physically closer to the silicon substrate.
- the thickness and/or width of a waveguide component, and/or the separation between adjacent waveguide components can all be modified between the first and second portions 424, 426 to alter the electrical coupling between a given portion of a waveguide component and the silicon substrate.
- the electrical coupling between the substrate 402 and the first and second portions 424, 426 can be adjusted as desired by properly controlling the conductivity of the substrate 402.
- the substrate 402 under the first portion 424 may be selectively doped differently than the substrate 402 under the second portion 426 (or vice-versa) to make the substrates 402 under the first and second portions 424, 426 differ in conductivity.
- initial silicon substrates of differing conductivities can be used under the first and second portions 424, 426.
- the electrical coupling between the waveguide component 410 and the substrate 402 can be made to differ between the first and second portions 424, 426 of the waveguide component 410 such that the second portion 426 is more closely electrically coupled to the substrate 402 (i.e. coupled with higher resistance) than is the first portion 424.
- the waveguide components shown in FIGS. 42-45 are only examples, and the present invention can be adapted for use with the widest variety of waveguides, including many variations of the conventional coplanar waveguide, stripline, microstrip, and other waveguide structures.
- This invention is also adapted for use with semiconductor structures in which backside metal is provided on the substrate, as well as embodiments in which no backside metal is provided.
- This invention is also for use in applications in which a ground plane is deposited on the opposite side of the waveguide from the substrate.
- a wide variety of materials can be used for the various conductors described above, including gold, copper, ohmic metal, and other metals and metal alloys. Any suitable metallic trace or other conductive trace can be used for the waveguide components.
- not all of these layers may be required to provide a monocrystalline semiconductor material layer overlying a monocrystalline semiconductor substrate, wherein the monocrystalline semiconductor layer and the monocrystalline substrate are formed of dissimilar semiconductor materials.
- additional layers may be provided if desired, such as the additional buffer layer 32, the template layers 30, 60, 130, the amorphous layers 36, 86 or the additional monocrystalline layer 38 described above.
- any of the semiconductor structures and processes described herein can be used to form the desired monocrystalline semiconductor substrate and overlying monocrystalline semiconductor layer, wherein the substrate and the layer comprise dissimilar semiconductor materials.
- the term "overlie” is intended broadly to refer to one layer that is generally parallel to another layer or substrate, whether or not there are intervening layers between the two.
- the monocrystalline compound semiconductor layer 408 is said to overlie the monocrystalline silicon substrate 402, even though the layers 404, 406 are interposed between the layer 408 and the substrate 402.
- a layer is said to directly overlie an adjacent layer or substrate when there are no intervening layers between the two.
- layer is intended broadly to include layers of varying thicknesses, including films.
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Abstract
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Citations (2)
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GB2335792A (en) * | 1998-03-26 | 1999-09-29 | Murata Manufacturing Co | Opto-electronic integrated circuit |
US6103008A (en) * | 1998-07-30 | 2000-08-15 | Ut-Battelle, Llc | Silicon-integrated thin-film structure for electro-optic applications |
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Publication number | Priority date | Publication date | Assignee | Title |
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GB2335792A (en) * | 1998-03-26 | 1999-09-29 | Murata Manufacturing Co | Opto-electronic integrated circuit |
US6103008A (en) * | 1998-07-30 | 2000-08-15 | Ut-Battelle, Llc | Silicon-integrated thin-film structure for electro-optic applications |
Non-Patent Citations (1)
Title |
---|
YU Z ET AL: "Epitaxial oxide thin films on Si(001)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 18, no. 4, July 2000 (2000-07-01), pages 2139 - 2145, XP002172595, ISSN: 0734-211X * |
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