WO2002084684A3 - Tunable planar capacitor - Google Patents

Tunable planar capacitor Download PDF

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Publication number
WO2002084684A3
WO2002084684A3 PCT/IB2002/001097 IB0201097W WO02084684A3 WO 2002084684 A3 WO2002084684 A3 WO 2002084684A3 IB 0201097 W IB0201097 W IB 0201097W WO 02084684 A3 WO02084684 A3 WO 02084684A3
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
bias electrode
capacitor electrodes
planar capacitor
variable
Prior art date
Application number
PCT/IB2002/001097
Other languages
French (fr)
Other versions
WO2002084684A2 (en
Inventor
Stanley S Toncich
Original Assignee
Kyocera Wireless Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/904,631 external-priority patent/US6690251B2/en
Application filed by Kyocera Wireless Corp filed Critical Kyocera Wireless Corp
Priority to AU2002249507A priority Critical patent/AU2002249507A1/en
Publication of WO2002084684A2 publication Critical patent/WO2002084684A2/en
Publication of WO2002084684A3 publication Critical patent/WO2002084684A3/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/30—Circuits for homodyne or synchrodyne receivers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2688—Measuring quality factor or dielectric loss, e.g. loss angle, or power factor
    • G01R27/2694—Measuring dielectric loss, e.g. loss angle, loss factor or power factor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/362—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
    • H03J5/24—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
    • H03J5/246—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection using electronic means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
    • H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
    • H03L1/022—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only by indirect stabilisation, i.e. by generating an electrical correction signal which is a function of the temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
    • H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/004—Capacitive coupling circuits not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A tunable capacitor that introduces significantly less loss, if any, costs less and is smaller than previously available. A bias electrode (14) is coupled to a FE material (16). The capacitor electrodes (21, 24) are electro-magnetically coupled to the FE material, such that the capacitor electrodes and the bias electrode are not touching. Only non-conductive material is in the gap defined by the capacitor electrodes. The bias electrode (14) is used to apply a variable DC voltage to the FE material (16). A capacitor electrode (21, 24) serves as a DC ground for producing a variable DC field between the bias electrode (14) and the capacitor electrodes (21, 24).
PCT/IB2002/001097 2001-04-11 2002-04-05 Tunable planar capacitor WO2002084684A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002249507A AU2002249507A1 (en) 2001-04-11 2002-04-05 Tunable planar capacitor

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US28309301P 2001-04-11 2001-04-11
US60/283,093 2001-04-11
US09/904,631 2001-07-13
US09/904,631 US6690251B2 (en) 2001-04-11 2001-07-13 Tunable ferro-electric filter
US09/912,753 2001-07-24
US09/912,753 US6639491B2 (en) 2001-04-11 2001-07-24 Tunable ferro-electric multiplexer
US09/927,732 2001-08-08
US09/927,732 US6690176B2 (en) 2001-04-11 2001-08-08 Low-loss tunable ferro-electric device and method of characterization
US09/927,136 2001-08-10
US09/927,136 US6825818B2 (en) 2001-04-11 2001-08-10 Tunable matching circuit
US10/044,522 US6737930B2 (en) 2001-04-11 2002-01-11 Tunable planar capacitor
US10/044,522 2002-01-11

Publications (2)

Publication Number Publication Date
WO2002084684A2 WO2002084684A2 (en) 2002-10-24
WO2002084684A3 true WO2002084684A3 (en) 2004-05-27

Family

ID=27556473

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/001097 WO2002084684A2 (en) 2001-04-11 2002-04-05 Tunable planar capacitor

Country Status (2)

Country Link
AU (1) AU2002249507A1 (en)
WO (1) WO2002084684A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7579644B2 (en) 2006-05-18 2009-08-25 International Business Machines Corporation Adjustable on-chip sub-capacitor design
US8467169B2 (en) * 2007-03-22 2013-06-18 Research In Motion Rf, Inc. Capacitors adapted for acoustic resonance cancellation
US10332687B2 (en) 2017-10-23 2019-06-25 Blackberry Limited Tunable coplanar capacitor with vertical tuning and lateral RF path and methods for manufacturing thereof
US10497774B2 (en) 2017-10-23 2019-12-03 Blackberry Limited Small-gap coplanar tunable capacitors and methods for manufacturing thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640042A (en) * 1995-12-14 1997-06-17 The United States Of America As Represented By The Secretary Of The Army Thin film ferroelectric varactor
US5777839A (en) * 1991-11-08 1998-07-07 Rohm Co., Ltd. Capacitor using dielectric film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777839A (en) * 1991-11-08 1998-07-07 Rohm Co., Ltd. Capacitor using dielectric film
US5640042A (en) * 1995-12-14 1997-06-17 The United States Of America As Represented By The Secretary Of The Army Thin film ferroelectric varactor

Also Published As

Publication number Publication date
WO2002084684A2 (en) 2002-10-24
AU2002249507A1 (en) 2002-10-28

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