WO2002082593A3 - Laser apparatus - Google Patents

Laser apparatus Download PDF

Info

Publication number
WO2002082593A3
WO2002082593A3 PCT/EP2002/003756 EP0203756W WO02082593A3 WO 2002082593 A3 WO2002082593 A3 WO 2002082593A3 EP 0203756 W EP0203756 W EP 0203756W WO 02082593 A3 WO02082593 A3 WO 02082593A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
laser assembly
reflective surface
laser
lobe
Prior art date
Application number
PCT/EP2002/003756
Other languages
French (fr)
Other versions
WO2002082593A2 (en
Inventor
Christian Pedersen
Weidong Sheng
Original Assignee
Torsana Laser Technologies As
Christian Pedersen
Weidong Sheng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Torsana Laser Technologies As, Christian Pedersen, Weidong Sheng filed Critical Torsana Laser Technologies As
Priority to AU2002254975A priority Critical patent/AU2002254975A1/en
Publication of WO2002082593A2 publication Critical patent/WO2002082593A2/en
Publication of WO2002082593A3 publication Critical patent/WO2002082593A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4062Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08018Mode suppression
    • H01S3/0804Transverse or lateral modes
    • H01S3/0805Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/148External cavity lasers using a Talbot cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

Laser apparatus comprises a laser assembly (30) for producing light having multiple lobes in its far field intensity pattern. A light feedback element (37) forms a resonant external cavity with the laser assembly (30) for returning to the laser assembly light (34) derived from a first lobe of the light produced by the laser assembly, an output beam (35) being derived from a second lobe. The light feedback element has a reflective surface (38) for reflecting back to the laser assembly light incident on the reflective surface. A spatial filter restricts the transverse modes of the feedback light to one or more selected transverse modes, and includes a masking element (41) positioned between the reflective surface and the laser assembly. The spatial filter is formed by a pair of opposed edges (39, 40) comprising an edge (39) of the reflective surface and an edge (40) of the masking element (41).
PCT/EP2002/003756 2001-04-09 2002-04-04 Laser apparatus WO2002082593A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002254975A AU2002254975A1 (en) 2001-04-09 2002-04-04 Laser apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28218601P 2001-04-09 2001-04-09
US60/282,186 2001-04-09

Publications (2)

Publication Number Publication Date
WO2002082593A2 WO2002082593A2 (en) 2002-10-17
WO2002082593A3 true WO2002082593A3 (en) 2002-12-19

Family

ID=23080438

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/003756 WO2002082593A2 (en) 2001-04-09 2002-04-04 Laser apparatus

Country Status (2)

Country Link
AU (1) AU2002254975A1 (en)
WO (1) WO2002082593A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004021524A2 (en) * 2002-09-02 2004-03-11 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg Semiconductor laser device
DE102004053136B4 (en) * 2004-10-29 2008-04-03 Raab, Volker, Dr. Laser resonator with internal beam splitter
JP2007300015A (en) * 2006-05-02 2007-11-15 Sony Corp Optical unit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430748A (en) * 1994-01-21 1995-07-04 Maccormack; Stuart Laser system with phase-conjugator-enhanced output
WO1998015994A1 (en) * 1996-10-09 1998-04-16 Pillai Ramadas M R External cavity micro laser apparatus
WO1998056087A1 (en) * 1997-06-06 1998-12-10 Torsana A/S Laser systems using phase conjugate feedback

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430748A (en) * 1994-01-21 1995-07-04 Maccormack; Stuart Laser system with phase-conjugator-enhanced output
WO1998015994A1 (en) * 1996-10-09 1998-04-16 Pillai Ramadas M R External cavity micro laser apparatus
WO1998056087A1 (en) * 1997-06-06 1998-12-10 Torsana A/S Laser systems using phase conjugate feedback

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PILLAI R M R ET AL: "PARAXIAL-MISALIGNMENT INSENSITIVE EXTERNAL-CAVITY SEMICONDUCTOR- LASER ARRAY EMITTING NEAR-DIFFRACTION LIMITED SINGLE-LOBED BEAM", IEEE JOURNAL OF QUANTUM ELECTRONICS,IEEE INC. NEW YORK,US, vol. 32, no. 6, 1 June 1996 (1996-06-01), pages 996 - 1008, XP000590108, ISSN: 0018-9197 *
YAELI J ET AL: "ARRAY MODE SELECTION UTILIZING AN EXTERNAL CAVITY CONFIGURATION", APPLIED PHYSICS LETTERS,AMERICAN INSTITUTE OF PHYSICS. NEW YORK,US, vol. 47, no. 2, 15 July 1985 (1985-07-15), pages 89 - 91, XP000706628, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
AU2002254975A1 (en) 2002-10-21
WO2002082593A2 (en) 2002-10-17

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