WO2002073756A3 - Optical devices - Google Patents

Optical devices Download PDF

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Publication number
WO2002073756A3
WO2002073756A3 PCT/GB2002/001145 GB0201145W WO02073756A3 WO 2002073756 A3 WO2002073756 A3 WO 2002073756A3 GB 0201145 W GB0201145 W GB 0201145W WO 02073756 A3 WO02073756 A3 WO 02073756A3
Authority
WO
WIPO (PCT)
Prior art keywords
signal
modulating
optical devices
bias
fist
Prior art date
Application number
PCT/GB2002/001145
Other languages
French (fr)
Other versions
WO2002073756A2 (en
Inventor
Richard Vincent Penty
Ian Hugh White
Laurence John Sargent
Aeneas Benedict Massara
Original Assignee
Univ Bristol
Richard Vincent Penty
Ian Hugh White
Laurence John Sargent
Aeneas Benedict Massara
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Bristol, Richard Vincent Penty, Ian Hugh White, Laurence John Sargent, Aeneas Benedict Massara filed Critical Univ Bristol
Publication of WO2002073756A2 publication Critical patent/WO2002073756A2/en
Publication of WO2002073756A3 publication Critical patent/WO2002073756A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A laser diode device comprises a layered structure, and defines two upper contact regions to which bias current signals can be applied. A first contact region receives a fist bias signal and a modulating signal. Such a device can produce a light output signal which can be modulated at high frequency using a low modulating current swing and can operated in uncooled conditions, whilst giving satisfactory output characteristics compared with single contact devices.
PCT/GB2002/001145 2001-03-12 2002-03-12 Optical devices WO2002073756A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0106075A GB2373369A (en) 2001-03-12 2001-03-12 Laser diodes
GB0106075.5 2001-03-12

Publications (2)

Publication Number Publication Date
WO2002073756A2 WO2002073756A2 (en) 2002-09-19
WO2002073756A3 true WO2002073756A3 (en) 2003-08-28

Family

ID=9910501

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2002/001145 WO2002073756A2 (en) 2001-03-12 2002-03-12 Optical devices

Country Status (2)

Country Link
GB (1) GB2373369A (en)
WO (1) WO2002073756A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999146A (en) * 1974-08-23 1976-12-21 Nippon Electric Company, Ltd. Semiconductor laser device
EP0128297A2 (en) * 1983-04-11 1984-12-19 Nec Corporation Frequency-stabilized semiconductor laser oscillator
EP0189252A2 (en) * 1985-01-14 1986-07-30 Nec Corporation Semiconductor laser direct frequency modulation system
EP0354141A2 (en) * 1988-08-05 1990-02-07 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot
EP0488417A2 (en) * 1990-11-30 1992-06-03 Fujitsu Limited Driver circuit of a tunable laser diode
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
JPH07249832A (en) * 1994-03-10 1995-09-26 Canon Inc Optical transmitter-receiver, its driving method, and optical communication system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6390883A (en) * 1986-10-03 1988-04-21 Nec Corp Semiconductor laser device
US4972352A (en) * 1988-08-10 1990-11-20 Shildon Limited Semiconductors lasers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999146A (en) * 1974-08-23 1976-12-21 Nippon Electric Company, Ltd. Semiconductor laser device
EP0128297A2 (en) * 1983-04-11 1984-12-19 Nec Corporation Frequency-stabilized semiconductor laser oscillator
EP0189252A2 (en) * 1985-01-14 1986-07-30 Nec Corporation Semiconductor laser direct frequency modulation system
EP0354141A2 (en) * 1988-08-05 1990-02-07 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
EP0488417A2 (en) * 1990-11-30 1992-06-03 Fujitsu Limited Driver circuit of a tunable laser diode
JPH07249832A (en) * 1994-03-10 1995-09-26 Canon Inc Optical transmitter-receiver, its driving method, and optical communication system

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
K. KIKUCHI, ET AL.: "Performance Analysis of Separated-Electrode DFB Laser Diode", ELECTRONICS LETTERS, vol. 25, no. 2, 19 January 1989 (1989-01-19), pages 162 - 163, XP001153161 *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 01 31 January 1996 (1996-01-31) *
SHATALOV M S ET AL: "Output pulse waveform correction by dual modulation of three-terminal Fabry-Perot diode laser", MICROWAVE PHOTONICS, 1996. MWP '96. TECHNICAL DIGEST., 1996 INTERNATONAL TOPICAL MEETING ON KYOTO, JAPAN 3-5 DEC. 1996, NEW YORK, NY, USA,IEEE, US, 3 December 1996 (1996-12-03), pages 129 - 132, XP010270512, ISBN: 0-7803-3129-X *

Also Published As

Publication number Publication date
WO2002073756A2 (en) 2002-09-19
GB0106075D0 (en) 2001-05-02
GB2373369A (en) 2002-09-18

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