WO2002059948A3 - Ferroelectric capacitor, method for the production thereof and use of the same - Google Patents

Ferroelectric capacitor, method for the production thereof and use of the same Download PDF

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Publication number
WO2002059948A3
WO2002059948A3 PCT/DE2002/000123 DE0200123W WO02059948A3 WO 2002059948 A3 WO2002059948 A3 WO 2002059948A3 DE 0200123 W DE0200123 W DE 0200123W WO 02059948 A3 WO02059948 A3 WO 02059948A3
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
trench
electrode layers
ferroelectric
production
Prior art date
Application number
PCT/DE2002/000123
Other languages
German (de)
French (fr)
Other versions
WO2002059948A2 (en
Inventor
Dana Pitzer
Robert Primig
Matthias Schreiter
Rainer Bruchhaus
Original Assignee
Siemens Ag
Dana Pitzer
Robert Primig
Matthias Schreiter
Rainer Bruchhaus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Dana Pitzer, Robert Primig, Matthias Schreiter, Rainer Bruchhaus filed Critical Siemens Ag
Publication of WO2002059948A2 publication Critical patent/WO2002059948A2/en
Publication of WO2002059948A3 publication Critical patent/WO2002059948A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only

Abstract

The invention relates to a capacitor comprising a layered structure having at least two electrode layers (3, 4) and a ferroelectric layer (2) consisting of a ferroelectric material and arranged between said electrode layers. At least one of the electrode layers (4) comprises at least one trench (5) for the electrical isolation of at least two partial areas (6, 7) of the electrode layer which are arranged next to each other and define the trench, and the trench comprises an electrical isolating material (11) which is different from the ferroelectric material. The inventive capacitor is characterised in that the trench is defined by the ferroelectric layer. The trench and the isolation material thereof enable the electrode layers to be electrically isolated in a simple and reliable manner. The production of the capacitor can also be simplified in that the isolating material does not need to be arranged on a lateral surface of the capacitor in order to electrically isolate the electrode layers. The capacitor is used as a detector element (20) of a detector array (21) for detecting infrared radiation (22).
PCT/DE2002/000123 2001-01-26 2002-01-17 Ferroelectric capacitor, method for the production thereof and use of the same WO2002059948A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001103529 DE10103529B4 (en) 2001-01-26 2001-01-26 Ferroelectric capacitor, method of manufacturing and using the capacitor
DE10103529.2 2001-01-26

Publications (2)

Publication Number Publication Date
WO2002059948A2 WO2002059948A2 (en) 2002-08-01
WO2002059948A3 true WO2002059948A3 (en) 2003-06-26

Family

ID=7671847

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000123 WO2002059948A2 (en) 2001-01-26 2002-01-17 Ferroelectric capacitor, method for the production thereof and use of the same

Country Status (2)

Country Link
DE (1) DE10103529B4 (en)
WO (1) WO2002059948A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007062053B4 (en) * 2007-12-21 2012-01-19 Pyreos Ltd. Method for producing a device for detecting heat radiation
DE102013108280B3 (en) * 2013-08-01 2014-10-09 Pyreos Ltd. Method for producing a microsystem with pixels

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5717236A (en) * 1995-05-15 1998-02-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory including stacked capacitor having a flat surface
US5939722A (en) * 1996-10-31 1999-08-17 Siemens Aktiengesellschaft Semiconductor detector for infrared radiation and method for manufacturing same
US6001660A (en) * 1997-04-17 1999-12-14 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors using metal reflow techniques

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413667A (en) * 1992-11-04 1995-05-09 Matsushita Electric Industrial Co., Ltd. Pyroelectric infrared detector fabricating method
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5717236A (en) * 1995-05-15 1998-02-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory including stacked capacitor having a flat surface
US5939722A (en) * 1996-10-31 1999-08-17 Siemens Aktiengesellschaft Semiconductor detector for infrared radiation and method for manufacturing same
US6001660A (en) * 1997-04-17 1999-12-14 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors using metal reflow techniques

Also Published As

Publication number Publication date
DE10103529B4 (en) 2004-01-15
WO2002059948A2 (en) 2002-08-01
DE10103529A1 (en) 2002-08-22

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