WO2002057508A3 - Method for the production of sputtering targets - Google Patents

Method for the production of sputtering targets Download PDF

Info

Publication number
WO2002057508A3
WO2002057508A3 PCT/EP2002/000378 EP0200378W WO02057508A3 WO 2002057508 A3 WO2002057508 A3 WO 2002057508A3 EP 0200378 W EP0200378 W EP 0200378W WO 02057508 A3 WO02057508 A3 WO 02057508A3
Authority
WO
WIPO (PCT)
Prior art keywords
target base
sputtering targets
invention comprises
titanium dioxide
production
Prior art date
Application number
PCT/EP2002/000378
Other languages
French (fr)
Other versions
WO2002057508A2 (en
Inventor
Klaus Hartig
Annette J Krisko
Original Assignee
Bekaert Sa Nv
Klaus Hartig
Annette J Krisko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bekaert Sa Nv, Klaus Hartig, Annette J Krisko filed Critical Bekaert Sa Nv
Priority to US10/250,687 priority Critical patent/US20040115362A1/en
Priority to EP02719697A priority patent/EP1352105A2/en
Priority to AU2002250831A priority patent/AU2002250831A1/en
Priority to JP2002558558A priority patent/JP2004520484A/en
Publication of WO2002057508A2 publication Critical patent/WO2002057508A2/en
Publication of WO2002057508A3 publication Critical patent/WO2002057508A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Catalysts (AREA)

Abstract

The invention comprises forming sputtering targets from photocatalyst particles that are free of inert particle treatment. The photocatalyst particles are plasma sprayed onto the target base. For example, a preferred embodiment of the invention comprises plasma spraying uncoated titanium dioxide particles onto a target base. The titanium dioxide particles are optionally plasma sprayed under conditions that result in the target base being coated with substoichiometric titanium oxide, TiOx, where x is less than 2.
PCT/EP2002/000378 2001-01-17 2002-01-14 Method for the production of sputtering targets WO2002057508A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/250,687 US20040115362A1 (en) 2002-01-14 2002-01-14 Photocatalytic sputtering targets and methods for the production and use thereof
EP02719697A EP1352105A2 (en) 2001-01-17 2002-01-14 Photocatalytic sputtering targets and methods for the production and use thereof
AU2002250831A AU2002250831A1 (en) 2001-01-17 2002-01-14 Method for the production of sputtering targets
JP2002558558A JP2004520484A (en) 2001-01-17 2002-01-14 Photocatalyst based sputtering target, manufacturing method and use thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26287801P 2001-01-17 2001-01-17
US60/262,878 2001-01-17

Publications (2)

Publication Number Publication Date
WO2002057508A2 WO2002057508A2 (en) 2002-07-25
WO2002057508A3 true WO2002057508A3 (en) 2003-01-03

Family

ID=22999452

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/000378 WO2002057508A2 (en) 2001-01-17 2002-01-14 Method for the production of sputtering targets

Country Status (4)

Country Link
EP (1) EP1352105A2 (en)
JP (1) JP2004520484A (en)
AU (1) AU2002250831A1 (en)
WO (1) WO2002057508A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109364903B (en) * 2018-10-23 2021-05-25 江西科技师范大学 High-specific-surface-area nano titanium dioxide photocatalytic coating and preparation method thereof

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK1597407T3 (en) * 2003-02-24 2011-09-26 Tekna Plasma Systems Inc Process for producing a nebulizer target
JP4022167B2 (en) * 2003-05-06 2007-12-12 株式会社不二機販 Photocatalytic coating method
DE102004032635A1 (en) * 2004-07-06 2006-02-09 Gfe Metalle Und Materialien Gmbh Process for producing a titanium-suboxide-based coating material, correspondingly produced coating material and sputtering target provided therewith
DE102004046390A1 (en) * 2004-09-24 2006-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for vacuum coating with a photo-semiconductive layer and application of the method
US9145601B2 (en) * 2010-10-27 2015-09-29 Instrument Technology Research Center, National Applied Research Laboratories Material for expanding the range of light absorption in an original constitution material
CN112717924B (en) * 2021-01-07 2023-09-26 北京工业大学 Method for rapidly synthesizing monoatomic catalyst by plasma sputtering method and application thereof
CN113275028B (en) * 2021-04-20 2022-12-06 广东石油化工学院 Carbon nitride quantum dot/titanium suboxide nanorod composite photocatalyst and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62161945A (en) * 1985-08-20 1987-07-17 Toyo Soda Mfg Co Ltd Production of ceramic sputtering target
WO1997025451A1 (en) * 1996-01-05 1997-07-17 Bvba Vanderstraeten E Sputtering targets and method for the preparation thereof
EP0852266A1 (en) * 1995-08-23 1998-07-08 Asahi Glass Company Ltd. Target, process for production thereof, and method of forming highly refractive film
JPH1112720A (en) * 1997-06-25 1999-01-19 Asahi Glass Co Ltd Formation of titanium oxide film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62161945A (en) * 1985-08-20 1987-07-17 Toyo Soda Mfg Co Ltd Production of ceramic sputtering target
EP0852266A1 (en) * 1995-08-23 1998-07-08 Asahi Glass Company Ltd. Target, process for production thereof, and method of forming highly refractive film
WO1997025451A1 (en) * 1996-01-05 1997-07-17 Bvba Vanderstraeten E Sputtering targets and method for the preparation thereof
WO1997025450A1 (en) * 1996-01-05 1997-07-17 Bvba Vanderstraeten E Process for coating a substrate with titanium dioxide
JPH1112720A (en) * 1997-06-25 1999-01-19 Asahi Glass Co Ltd Formation of titanium oxide film

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 012, no. 005 (C - 467) 8 January 1988 (1988-01-08) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 04 30 April 1999 (1999-04-30) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109364903B (en) * 2018-10-23 2021-05-25 江西科技师范大学 High-specific-surface-area nano titanium dioxide photocatalytic coating and preparation method thereof

Also Published As

Publication number Publication date
EP1352105A2 (en) 2003-10-15
AU2002250831A1 (en) 2002-07-30
JP2004520484A (en) 2004-07-08
WO2002057508A2 (en) 2002-07-25

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