WO2002048796A3 - Projection system for euv lithography - Google Patents

Projection system for euv lithography Download PDF

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Publication number
WO2002048796A3
WO2002048796A3 PCT/EP2001/014301 EP0114301W WO0248796A3 WO 2002048796 A3 WO2002048796 A3 WO 2002048796A3 EP 0114301 W EP0114301 W EP 0114301W WO 0248796 A3 WO0248796 A3 WO 0248796A3
Authority
WO
WIPO (PCT)
Prior art keywords
mirror
image
tertiary
projection system
optical
Prior art date
Application number
PCT/EP2001/014301
Other languages
French (fr)
Other versions
WO2002048796A2 (en
Inventor
Hans-Juergen Mann
Russell Hudyma
Original Assignee
Carl Zeiss Semiconductor Mfg
Hans-Juergen Mann
Russell Hudyma
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Semiconductor Mfg, Hans-Juergen Mann, Russell Hudyma filed Critical Carl Zeiss Semiconductor Mfg
Priority to KR10-2003-7007857A priority Critical patent/KR20040024536A/en
Priority to EP01270809A priority patent/EP1342128A2/en
Priority to JP2002550445A priority patent/JP2004516500A/en
Publication of WO2002048796A2 publication Critical patent/WO2002048796A2/en
Publication of WO2002048796A3 publication Critical patent/WO2002048796A3/en
Priority to US10/454,831 priority patent/US6985210B2/en
Priority to US11/243,407 priority patent/US7355678B2/en
Priority to US11/657,420 priority patent/US7375798B2/en
Priority to US11/981,511 priority patent/USRE42118E1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is concave, and the tertiary mirror (M3) is convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°.
PCT/EP2001/014301 1999-02-15 2001-12-06 Projection system for euv lithography WO2002048796A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR10-2003-7007857A KR20040024536A (en) 2000-12-12 2001-12-06 Projection system for euv lithography
EP01270809A EP1342128A2 (en) 2000-12-12 2001-12-06 Projection system for euv lithography
JP2002550445A JP2004516500A (en) 2000-12-12 2001-12-06 Projection system for EUV lithography
US10/454,831 US6985210B2 (en) 1999-02-15 2003-06-04 Projection system for EUV lithography
US11/243,407 US7355678B2 (en) 1999-02-15 2005-10-04 Projection system for EUV lithography
US11/657,420 US7375798B2 (en) 1999-02-15 2007-01-24 Projection system for EUV lithography
US11/981,511 USRE42118E1 (en) 1999-02-15 2007-10-31 Projection system for EUV lithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25516100P 2000-12-12 2000-12-12
US60/255,161 2000-12-12

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US09/503,640 Continuation-In-Part US6353470B1 (en) 1999-02-15 2000-02-14 Microlithography reduction objective and projection exposure apparatus
US10/004,674 Continuation-In-Part US6600552B2 (en) 1999-02-15 2001-12-03 Microlithography reduction objective and projection exposure apparatus

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/454,831 Continuation US6985210B2 (en) 1999-02-15 2003-06-04 Projection system for EUV lithography
US10/454,831 Continuation-In-Part US6985210B2 (en) 1999-02-15 2003-06-04 Projection system for EUV lithography

Publications (2)

Publication Number Publication Date
WO2002048796A2 WO2002048796A2 (en) 2002-06-20
WO2002048796A3 true WO2002048796A3 (en) 2003-01-23

Family

ID=22967108

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/014301 WO2002048796A2 (en) 1999-02-15 2001-12-06 Projection system for euv lithography

Country Status (4)

Country Link
EP (1) EP1342128A2 (en)
JP (1) JP2004516500A (en)
KR (1) KR20040024536A (en)
WO (1) WO2002048796A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9465300B2 (en) 2005-09-13 2016-10-11 Carl Zeiss Smt Gmbh Catoptric objectives and systems using catoptric objectives
US9482961B2 (en) 2006-04-07 2016-11-01 Carl Zeiss Smt Gmbh Microlithography projection optical system, tool and method of production

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7151592B2 (en) 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
EP1615076A1 (en) * 2001-01-09 2006-01-11 Carl Zeiss SMT AG Projection system for EUV lithography
KR100831706B1 (en) * 2001-01-09 2008-05-22 칼 짜이스 에스엠티 에이지 Projection system for euv lithography
JP2004138926A (en) * 2002-10-21 2004-05-13 Nikon Corp Projection optical system and exposure apparatus equipped therewith
JP2004158786A (en) 2002-11-08 2004-06-03 Canon Inc Projection optical system and exposure device
JP2004252358A (en) * 2003-02-21 2004-09-09 Canon Inc Reflective projection optical system and exposing device
JP2004325649A (en) * 2003-04-23 2004-11-18 Canon Inc Reflective projection optical system, exposure device, and method for manufacturing device
EP1513019B1 (en) 2003-09-02 2012-07-25 Canon Kabushiki Kaisha Projection optical system, exposure apparatus and device fabricating method
US7161735B2 (en) 2003-09-02 2007-01-09 Canon Kabushiki Kaisha Projection optical system, exposure apparatus and device fabricating method
US7554649B2 (en) 2003-09-02 2009-06-30 Canon Kabushiki Kaisha Projection optical system, exposure apparatus and device fabricating method
JP2005172988A (en) * 2003-12-09 2005-06-30 Nikon Corp Projection optical system and exposure device equipped with the projection optical system
DE102005042005A1 (en) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Objective lens esp. as micro-lithography projection objective, has objective divided into first part-objective with single mirror and second part-objective with primary and secondary mirror
WO2006069725A1 (en) * 2004-12-23 2006-07-06 Carl Zeiss Smt Ag High aperture lens with an obscured pupil
KR101309880B1 (en) * 2005-05-13 2013-09-17 칼 짜이스 에스엠티 게엠베하 A six-mirror euv projection system with low incidence angles
DE102006014380A1 (en) 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Microlithography projection objective for imaging radiation from object plane to image plane, has mirrored entry pupil in mirrored entry pupil plane obtained by mirroring entry pupil at object plane
DE102006018928A1 (en) 2006-04-24 2007-11-08 Carl Zeiss Smt Ag Projection exposure system and use thereof
EP1950594A1 (en) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Imaging optical system, projection illumination unit for microlithography with such an optical system, method for manufacturing a microstructured component with such a projection illumination unit, microstructured component produced by the manufacturing method and use of such an optical system
US7929114B2 (en) 2007-01-17 2011-04-19 Carl Zeiss Smt Gmbh Projection optics for microlithography
DE102008002377A1 (en) 2007-07-17 2009-01-22 Carl Zeiss Smt Ag Illumination system and projection exposure apparatus for microlithography with such a lighting system
DE102008033341A1 (en) 2007-07-24 2009-01-29 Carl Zeiss Smt Ag projection lens
DE102007045396A1 (en) 2007-09-21 2009-04-23 Carl Zeiss Smt Ag Bundle-guiding optical collector for detecting the emission of a radiation source
DE102013226668A1 (en) * 2013-12-19 2015-06-25 Carl Zeiss Smt Gmbh Method for calibrating a wavefront generator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0779528A2 (en) * 1995-12-12 1997-06-18 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system
WO1999057606A1 (en) * 1998-05-06 1999-11-11 Koninklijke Philips Electronics N.V. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
DE19948240A1 (en) * 1999-02-15 2000-08-24 Zeiss Carl Fa Microlithography reduction objective lens with projection illumination installation, including its use in chip manufacture
EP1178356A2 (en) * 2000-08-01 2002-02-06 Carl Zeiss 6 mirror microlithography projection system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0779528A2 (en) * 1995-12-12 1997-06-18 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system
WO1999057606A1 (en) * 1998-05-06 1999-11-11 Koninklijke Philips Electronics N.V. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
DE19948240A1 (en) * 1999-02-15 2000-08-24 Zeiss Carl Fa Microlithography reduction objective lens with projection illumination installation, including its use in chip manufacture
EP1178356A2 (en) * 2000-08-01 2002-02-06 Carl Zeiss 6 mirror microlithography projection system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9465300B2 (en) 2005-09-13 2016-10-11 Carl Zeiss Smt Gmbh Catoptric objectives and systems using catoptric objectives
US9482961B2 (en) 2006-04-07 2016-11-01 Carl Zeiss Smt Gmbh Microlithography projection optical system, tool and method of production

Also Published As

Publication number Publication date
EP1342128A2 (en) 2003-09-10
KR20040024536A (en) 2004-03-20
WO2002048796A2 (en) 2002-06-20
JP2004516500A (en) 2004-06-03

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