WO2002041365A2 - Single crystalline oxide on a semiconductor substrate - Google Patents
Single crystalline oxide on a semiconductor substrate Download PDFInfo
- Publication number
- WO2002041365A2 WO2002041365A2 PCT/US2001/045570 US0145570W WO0241365A2 WO 2002041365 A2 WO2002041365 A2 WO 2002041365A2 US 0145570 W US0145570 W US 0145570W WO 0241365 A2 WO0241365 A2 WO 0241365A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor substrate
- single crystalline
- introducing
- forming single
- crystalline oxides
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 51
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 32
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 238000002128 reflection high energy electron diffraction Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 38
- 229910052788 barium Inorganic materials 0.000 claims description 19
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 17
- 239000002356 single layer Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 7
- 239000006227 byproduct Substances 0.000 claims description 3
- 230000003993 interaction Effects 0.000 claims description 3
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 claims 3
- 238000012544 monitoring process Methods 0.000 claims 3
- 230000004927 fusion Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052712 strontium Inorganic materials 0.000 abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 150000004679 hydroxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 one of pure H2O Chemical compound 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Definitions
- This invention relates to a method for forming single crystal oxides.
- the present invention relates to apparatus and method for forming single crystal oxides on semiconductor substrates.
- gate oxides are used in field effect transistors (FETs) to separate a gate terminal or contact from the gate area within the transistor.
- FETs field effect transistors
- DRAMs dynamic random access memory
- FeRAMs magnetic RAM
- SOls field effect transistors
- a major problem with using oxygen molecules (O2) to form an oxide directly on a semiconductor substrate is that the oxidation generally proceeds very fast so that some oxidation and other damage of the substrate occurs. Oxidation or any other alterations occurring in the semiconductor substrate will very radically affect any semiconductor devices formed in the substrate.
- single crystalline BaO and (Ba, Sr)0 thin oxide layers have been grown on a cubic BaS.2 or (Ba, Sr) S.2 template on a Si substrate using oxygen molecules (O2) by MBE techniques. While this procedure provides some protection for the semiconductor substrate, it does not result in the oxide being formed directly on the semiconductor substrate.
- FIGS. 1 through 3 are simplified sectional views of sequential steps in a method of forming single crystalline oxide on the surface of a semiconductor substrate in accordance with the present invention.
- FIG. 1 a simplified sectional view of a semiconductor substrate 10 having a surface 11 is illustrated.
- Semiconductor substrate 10 includes any of the well known semiconductor materials, such as silicon, germanium, etc. or any of the compound semiconductor materials.
- substrate 10 is silicon.
- surface 11 is a clean surface with no oxidation or other foreign materials thereon.
- Semiconductor substrate 10 is placed in an epitaxial chamber, such as a molecular beam epitaxy (MBE) chamber at a base pressure generally in a low 10" 10 Torr range.
- a metal from group II of the periodic table (hereinafter a II metal) is chosen for an oxide formation.
- the metal is barium, barium, strontium, or some combination including one of these metals.
- a very thin layer 12 of the II metal is deposited on surface 11 of semiconductor substrate 10, as illustrated in FIG. 2.
- the thickness of layer 12 will be in a range of 1 to 5 monolayers of the II metal.
- barium and strontium beams can be generated from resistively heated effusion cells.
- Layer 12 is formed with a thickness at least sufficient to passivate the material (i.e., terminate all loose bqnds or links) and protect surface 11 from oxygen introduced into the epitaxial chamber.
- the alternative oxidation agent is a material other than molecular oxygen (O2), such as one of pure H2O, NO, and N2O, including activated species, such as a plasma of any of these oxidation agents.
- the alternative oxidation agent is introduced into the epitaxial chamber at a partial vapor pressure and at a temperature high enough to enhance the formation of the II metal in layer 12 into an oxide and to prevent unwanted by- product formation, such as hydroxides of the II metal. Also, the temperature should be low enough to prevent unwanted metal-semiconductor interactions and interdiffusion of the II metal into semiconductor substrate 10.
- a controlled amount of the alternative oxidation agent is introduced into the epitaxial chamber through a leak valve, or other convenient device, at a partial vapor pressure in a range of approximately 10 -8 Torr to 10 -5 Torr and at a temperature in a range of approximately 300°C to 800°C.
- the alternative oxidation agent may be introduced in pulses or continuously.
- additional molecular II metal can be introduced into the epitaxial chamber with the alternative oxidation agent.
- RHEED reflection high energy electron diffraction
- a silicon substrate is provided and introduced into an
- two slightly different embodiments or methods can be used.
- sufficient II metal is initially deposited in the semiconductor surface to passivate the surface, this is generally a sub-monolayer to a monolayer of material.
- additional II metal is deposited to increase the thickness of layer 12 to 1 to 5 monolayers.
- the controlled amount of alternative oxidation agent is then introduced, as described above, to oxidize layer 12.
- additional II metal oxide can be added if desired by simultaneously introducing the II metal and the oxidation agent.
- molecular II metal and the oxidation agent are introduced simultaneously to grow the II metal oxide layer 14 to the desired thickness.
- a new and improved method of growing single crystalline oxide layers lattice-matched on semiconductor substrates is disclosed.
- the new method prevents the formation of unwanted by-products, such as hydroxides of the II metal.
- the new method prevents unwanted metal-semiconductor interactions and interdiffusion of the II metal into a semiconductor substrate.
- the new method is simple and can be used in an MBE chamber during normal processing procedures.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002228719A AU2002228719A1 (en) | 2000-11-16 | 2001-10-24 | Single crystalline oxide on a semiconductor substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71438000A | 2000-11-16 | 2000-11-16 | |
US09/714,380 | 2000-11-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002041365A2 true WO2002041365A2 (en) | 2002-05-23 |
WO2002041365A3 WO2002041365A3 (en) | 2003-01-23 |
Family
ID=24869807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/045570 WO2002041365A2 (en) | 2000-11-16 | 2001-10-24 | Single crystalline oxide on a semiconductor substrate |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2002228719A1 (en) |
WO (1) | WO2002041365A2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227363A (en) * | 1991-02-20 | 1993-07-13 | Sanyo Electric Co., Ltd. | Molecular beam epitaxy process of making superconducting oxide thin films using an oxygen radical beam |
US5556472A (en) * | 1991-12-09 | 1996-09-17 | Sumitomo Electric Industries, Ltd | Film deposition apparatus |
US5830270A (en) * | 1996-08-05 | 1998-11-03 | Lockheed Martin Energy Systems, Inc. | CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3683095B2 (en) * | 1998-03-20 | 2005-08-17 | 雅則 奥山 | Ferroelectric thin film material, manufacturing method of ferroelectric thin film material, manufacturing method of dielectric bolometer using ferroelectric thin film material, dielectric bolometer, and infrared detection element using the same |
-
2001
- 2001-10-24 AU AU2002228719A patent/AU2002228719A1/en not_active Abandoned
- 2001-10-24 WO PCT/US2001/045570 patent/WO2002041365A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227363A (en) * | 1991-02-20 | 1993-07-13 | Sanyo Electric Co., Ltd. | Molecular beam epitaxy process of making superconducting oxide thin films using an oxygen radical beam |
US5556472A (en) * | 1991-12-09 | 1996-09-17 | Sumitomo Electric Industries, Ltd | Film deposition apparatus |
US5830270A (en) * | 1996-08-05 | 1998-11-03 | Lockheed Martin Energy Systems, Inc. | CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 01, 31 January 2000 (2000-01-31) & JP 11 271142 A (OKUYAMA MASANORI;MURATA MFG CO LTD; MATSUSHITA ELECTRIC IND CO LTD), 5 October 1999 (1999-10-05) * |
Also Published As
Publication number | Publication date |
---|---|
AU2002228719A1 (en) | 2002-05-27 |
WO2002041365A3 (en) | 2003-01-23 |
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