WO2002027811A1 - Image sensor with a cell structure of organic semiconductors - Google Patents

Image sensor with a cell structure of organic semiconductors Download PDF

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Publication number
WO2002027811A1
WO2002027811A1 PCT/DE2000/003429 DE0003429W WO0227811A1 WO 2002027811 A1 WO2002027811 A1 WO 2002027811A1 DE 0003429 W DE0003429 W DE 0003429W WO 0227811 A1 WO0227811 A1 WO 0227811A1
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Prior art keywords
image
image sensor
oled
cell structure
light
Prior art date
Application number
PCT/DE2000/003429
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German (de)
French (fr)
Inventor
Marco Werner
Original Assignee
Siemens Aktiengesellschaft
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Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to PCT/DE2000/003429 priority Critical patent/WO2002027811A1/en
Publication of WO2002027811A1 publication Critical patent/WO2002027811A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to a light sensor or an image sensor according to the preamble of claim 1 or 2, and an image recording and reproducing device.
  • Image capture devices and in particular mobile image capture devices have a camera for recording the image and a display device or a display for checking the recorded or stored image.
  • Such cameras usually have a semiconductor chip, for example a so-called CMOS chip, as an image sensor for converting an optical image into image data.
  • CMOS chip CMOS chip
  • Both the camera and display require a corresponding mounting volume, which prevents extensive miniaturization.
  • these elements are cost drivers in consumer products. If the display or the display device is designed as a microdisplay, both elements require their own optical lens system.
  • the invention has for its object to provide a light or image sensor, through which both costs and the construction volume can be saved in the above devices.
  • Such an image sensor enables an image recording and reproduction unit as a single electro-optical component.
  • the invention is described below with reference to an exemplary embodiment shown in the drawing. Show
  • FIG. 2 shows the OLED display as a light sensor
  • FIG. 3 the OLED display for optional use as an image recording and reproduction unit
  • FIG. 4 and 5 the display in different applications.
  • the invention is based on organic LED elements as used in so-called OLED displays.
  • OLED displays The construction technology or the cell structure of these elements and their technology is described in detail on the Kodak website, for example.
  • OLED displays or active and passive matrix OLED displays are generally known for emitting light and thus for displaying image content.
  • the matrix displays are two-dimensional arrangements of organic LED elements.
  • TFT thin-film transistors
  • image display the individual diodes of the matrix displays are supplied with a supply voltage that is modulated in accordance with the image content.
  • the invention consists in utilizing the photosensitivity of organic semiconductors, as are used in the form of these OLED displays or matrix displays.
  • image display the individual diodes of the matrix displays are supplied with a supply voltage that is modulated in accordance with the image content.
  • electrical image signals are picked up using appropriately adapted thin film transistors (TFT).
  • FIG. 1 shows the structure of an OLED display element OD known per se.
  • the element OD consists of two electrodes, an anode A and a cathode K. Between them are a transport layer TE for electrons (shown with “-“) adjacent to the cathode K and a transport layer TL for holes (with “+ “is shown.
  • a recombination layer RK lies between the layer TE and the layer TL.
  • These transport layers TL and TE (transport layer) and the recombination layer RK (recombination layer) for electrical charge carriers, electrons and holes are generally semiconductor materials which are formed by doping organic substances, in particular plastics.
  • a voltage for example from a battery B
  • an electrical field is formed between the two electrodes A and K. Free electrons emerge from the cathode K and migrate in the direction of the anode A.
  • the A-node A in turn emits so-called holes, that is, defects for electrons that migrate in the direction of the cathode K.
  • the electrons and the holes recombine, emitting light guants.
  • the higher the applied voltage the greater the electrical current and the more light is emitted. If these elements OD are arranged in a two-dimensional array, each element can be controlled individually in terms of its brightness, and this matrix-like arrangement can be used to display images.
  • FIG. 2 shows the use of the OLED display element according to the invention as a light sensor LR.
  • the supply voltage battery B
  • the light sensor LR or the semiconductor material is struck by light quanta, these are absorbed, with free electrical rons and holes are created.
  • the electrons migrate to the cathode K and charge it negatively, and the holes migrate to the anode A and charge it positively.
  • a voltage V arises between the electrodes K and A, which is dependent on the intensity of the incident light and also on the properties of the semiconductor materials used.
  • the optoelectric effect is used in these organic semiconductor elements.
  • detecting and evaluating the voltage of an OLED element OD from FIG. 1
  • incident light can be detected.
  • This arrangement can be used as a light sensor LR (see FIG. 2).
  • the OLED display element OD is connected on the one hand to control electronics AS and on the other hand to evaluation electronics AW.
  • the control electronics AS is connected to a first image memory BS1 and the evaluation electronics AW is connected to a second image memory BS2.
  • Circuit is provided for alternative control of the display element OD as a display or recording element (image sensor BR).
  • the image sensor (BR) that is to say the matrix-shaped arrangement of the elements OD for realizing this sensor, serves on the one hand to reproduce the images stored in the first image memory BS1.
  • the elements OD serve to convert an optical image into image data, which are then stored in the second image memory BS2.
  • an OLED-based image sensor can be used wherever image sensors based on metallic semiconductors are used, such as cameras, camcorders, videophones and scanners. The advantages of OLED sensors are the low manufacturing and manufacturing costs.
  • FIG. 4 shows an arrangement of a miniaturized image recording / reproduction device in a housing GH.
  • the housing GH has an input opening with an objective OT, the "light incident from an object OB falling on the image sensor BR according to the invention with an OLED cell structure.
  • the OLED display used as the image sensor functions as a conventional display device AE, the light emitted by the display device AE emerges from the housing GH via the lens OT and can be perceived by a viewer BT
  • the control and readout unit provided in such a device is not shown in detail here.
  • FIG. 5 shows a similar arrangement, in which the OLED array OD is arranged as a direct view display on the device surface of the housing GH.
  • the image acquisition process is analogous to the case shown in FIG. 4.
  • the OLED array OD is arranged as an image sensor BR on the surface of the housing GH, it can be covered with a flap KP during the recording process.
  • the viewer BT looks directly at the OLED array OD, which then works as a display device AE.

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  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)

Abstract

The invention relates to a light sensor (LR) for the conversion of light into an electrical signal. According to the invention, an OLED cell structure is provided for said conversion.

Description

Beschreibungdescription
Bildsensor mit einer Zellenstruktur aus organischen HalbleiternImage sensor with a cell structure made of organic semiconductors
Die Erfindung betrifft einen Lichtsensor beziehungsweise einen Bildsensor gemäß dem Oberbegriff des Patentanspruchs 1 beziehungsweise 2, sowie ein Bildaufnahme- und - wiedergabegerät .The invention relates to a light sensor or an image sensor according to the preamble of claim 1 or 2, and an image recording and reproducing device.
Bilderfassungsgeräte und insbesondere mobile Bilderfassungs- geräte, wie beispielsweise elektronische Kameras und Videorekorder, besitzen zur Aufnahme des Bildes eine Kamera und zur Kontrolle des aufgenommenen oder gespeicherten Bildes eine Anzeigeeinrichtung beziehungsweise ein Display. Solche Kameras weisen meist als Bildsensor zur Umwandlung eines optischen Bildes in Bilddaten einen Halbleiter-Chip, beispielsweise einen sogenannten CMOS-Chip auf. Sowohl Kamera als auch Display benötigen ein entsprechendes A fbauvolumen, was einer weitgehenden Miniaturisierung entgegensteht. Ausserdem sind diese Elemente Kostentreiber in Consumerprodukten. Wenn das Display beziehungsweise die Anzeigeeinrichtung als Mikrodis- play ausgeführt wird, so benötigen beide Elemente ein eigenes optisches Linsensystem.Image capture devices and in particular mobile image capture devices, such as electronic cameras and video recorders, have a camera for recording the image and a display device or a display for checking the recorded or stored image. Such cameras usually have a semiconductor chip, for example a so-called CMOS chip, as an image sensor for converting an optical image into image data. Both the camera and display require a corresponding mounting volume, which prevents extensive miniaturization. In addition, these elements are cost drivers in consumer products. If the display or the display device is designed as a microdisplay, both elements require their own optical lens system.
Der Erfindung liegt die Aufgabe zugrunde, einen Licht- beziehungsweise Bildsensor anzugeben, durch den sowohl Kosten als auch das Aufbauvolumen bei den oben genannten Geräten eingespart werden kann.The invention has for its object to provide a light or image sensor, through which both costs and the construction volume can be saved in the above devices.
Diese Aufgabe wird erfindungsgemäß für einen Lichtsensor durch die im Patentanspruch 1 und für einen Bildsensor durch die im Patentanspruch 2 angegebenen Merkmale gelöst.This object is achieved for a light sensor by the features specified in claim 1 and for an image sensor by the features specified in claim 2.
Ein solcher Bildsensor ermöglicht eine Bildaufnahme- und - Wiedergabeeinheit gemäß Patentanspruch 3 als eine einzige e- lektro-optische Komponente. Im Folgenden wird die Erfindung anhand eines in der Zeichnung dargestellten AusführungsbeiSpieles beschrieben. Dabei zeigenSuch an image sensor enables an image recording and reproduction unit as a single electro-optical component. The invention is described below with reference to an exemplary embodiment shown in the drawing. Show
Figur 1 ein OLED-Display zur Bildwiedergabe gemäß dem Stand der Technik,1 shows an OLED display for image reproduction according to the prior art,
Figur 2 das OLED-Display als Lichtsensor,FIG. 2 shows the OLED display as a light sensor,
Figur 3 das OLED-Display zur wahlweisen Verwendung als Bildaufnahme- und -Wiedergabeeinheit,FIG. 3 the OLED display for optional use as an image recording and reproduction unit,
Figur 4 und 5 das Display in verschiedenen Anwendungen.Figure 4 and 5 the display in different applications.
Die Erfindung geht aus von organischen LED-Elementen, wie sie in sogenannten OLED-Displays verwendet werden. Die Aufbau- technik beziehungsweise die Zellenstruktur dieser Elemente sowie deren Technologie ist beispielsweise auf den Internetseiten der Firma Kodak ausführlich beschrieben.The invention is based on organic LED elements as used in so-called OLED displays. The construction technology or the cell structure of these elements and their technology is described in detail on the Kodak website, for example.
Diese OLED-Displays beziehungsweise aktive und passive Matrix OLED-Displays sind zum Aussenden von Licht und damit zur Anzeige von Bildinhalten allgemein bekannt. Die Matrixdisplays sind zweidimensionale Anordnungen von organischen LED- Elementen. Bei den aktiven OLED-Matrixdisplays sind beispielsweise in Spalten und Reihen sogenannte Thin-Film- Transistoren (TFT) zur Ansteuerung vorgesehen. Bei der Bildwiedergabe werden die einzelnen Dioden der Matrixdisplays mit einer dem Bildinhalt entsprechend modulierten Versorgungs- Spannung gespeist.These OLED displays or active and passive matrix OLED displays are generally known for emitting light and thus for displaying image content. The matrix displays are two-dimensional arrangements of organic LED elements. In the active OLED matrix displays, so-called thin-film transistors (TFT) are provided for control, for example in columns and rows. During image display, the individual diodes of the matrix displays are supplied with a supply voltage that is modulated in accordance with the image content.
Die Erfindung besteht in der Ausnutzung der Lichtempfindlichkeit von organischen Halbleitern, wie sie in Form von diesen OLED-Displays beziehungsweise -Matrixdisplays eingesetzt wer- den. Bei der Bildwiedergabe werden die einzelnen Dioden der Matrixdisplays mit einer dem Bildinhalt entsprechend modulierten VersorgungsSpannung gespeist. Bei der erfindungsgemä- ßen Verwendung werden über entsprechend angepasste Thin-Film- Transistoren (TFT) die elektrischen Bildsignale abgenommen.The invention consists in utilizing the photosensitivity of organic semiconductors, as are used in the form of these OLED displays or matrix displays. During image display, the individual diodes of the matrix displays are supplied with a supply voltage that is modulated in accordance with the image content. In the case of the When used, the electrical image signals are picked up using appropriately adapted thin film transistors (TFT).
In Figur 1 ist der Aufbau eines an sich bekannten OLED- Displayelements OD dargestellt. Das Element OD besteht aus zwei Elektroden, einer Anode A und einer Katode K. Dazwischen sind benachbart zur Katode K eine Transportschicht TE für E- lektronen (mit „-„ dargestellt) und benachbart zur Anode A eine Transportschicht TL für Löcher (mit „+" dargestellt) an- geordnet. Zwischen der Schicht TE und der Schicht TL liegt eine Rekobinationsschicht RK.FIG. 1 shows the structure of an OLED display element OD known per se. The element OD consists of two electrodes, an anode A and a cathode K. Between them are a transport layer TE for electrons (shown with “-“) adjacent to the cathode K and a transport layer TL for holes (with “+ "is shown. A recombination layer RK lies between the layer TE and the layer TL.
Diese Transportschichten TL und TE (Transportlayer) und die Rekombinationsschicht RK (Rekombinationslayer) für elektri- sehe Ladungsträger, Elektronen und Löcher, sind im Allgemeinen Halbleiterwerkstoffe, die durch Dotierung von organischen Stoffen, insbesondere von Kunststoffen, entstehen. Bei Anlegen einer Spannung, beispielsweise von einer Batterie B, an ein solches Element OD bildet sich zwischen den beiden Elekt- roden A und K ein elektrisches Feld. Aus der Katode K treten freie Elektronen aus und wandern in Richtung Anode A. Die A- node A ihrerseits emittiert sogenannte Löcher, das heisst, Fehlstellen für Elektronen, die in Richtung Katode K wandern. In der Rekombinationsschicht RK rekombinieren die Elektronen und die Löcher unter Aussendung von Lichtguanten. Je höher die angelegte Spannung ist, desto größer ist der elektrische Strom und desto mehr Licht wird emittiert. Werden diese Elemente OD in einem zweidimensionalen Array angeordnet, so ist jedes Element einzeln in seiner Helligkeit ansteuerbar, und diese matrixartige Anordnung kann zur Anzeige von Bildern verwendet werden.These transport layers TL and TE (transport layer) and the recombination layer RK (recombination layer) for electrical charge carriers, electrons and holes are generally semiconductor materials which are formed by doping organic substances, in particular plastics. When a voltage, for example from a battery B, is applied to such an element OD, an electrical field is formed between the two electrodes A and K. Free electrons emerge from the cathode K and migrate in the direction of the anode A. The A-node A in turn emits so-called holes, that is, defects for electrons that migrate in the direction of the cathode K. In the recombination layer RK, the electrons and the holes recombine, emitting light guants. The higher the applied voltage, the greater the electrical current and the more light is emitted. If these elements OD are arranged in a two-dimensional array, each element can be controlled individually in terms of its brightness, and this matrix-like arrangement can be used to display images.
In Figur 2 ist die erfindungsgemäße Verwendung des OLED- Displayelements als Lichtsensor LR dargestellt. Hierbei fehlt die VersorgungsSpannung (Batterie B) . Wenn der Lichtsensor LR beziehungsweise der Halbleiterwerkstoff von Lichtquanten getroffen wird, so werden diese absorbiert, wobei freie Elekt- ronen und Löcher erzeugt werden. Die Elektronen wandern zur Katode K und laden diese negativ auf, und die Löcher wandern zur Anode A und laden diese positiv auf. Es entsteht zwischen den Elektroden K und A eine Spannung V, die von der Intensi- tat des einfallenden Lichtes und auch von den Eigenschaften der verwendeten Halbleitermaterialien abhängig ist.FIG. 2 shows the use of the OLED display element according to the invention as a light sensor LR. The supply voltage (battery B) is missing. If the light sensor LR or the semiconductor material is struck by light quanta, these are absorbed, with free electrical rons and holes are created. The electrons migrate to the cathode K and charge it negatively, and the holes migrate to the anode A and charge it positively. A voltage V arises between the electrodes K and A, which is dependent on the intensity of the incident light and also on the properties of the semiconductor materials used.
Bei der Erfindung wird der optoelektrische Effekt bei diesen organischen Halbleiterelementen ausgenutzt. Durch die Erfas- sung und Auswertung der Spannung eines OLED Elementes OD (aus Figur 1) kann einfallendes Licht detektiert werden. Diese Anordnung kann als Lichtsensor LR (siehe Figur 2) verwendet werden.In the invention, the optoelectric effect is used in these organic semiconductor elements. By detecting and evaluating the voltage of an OLED element OD (from FIG. 1), incident light can be detected. This arrangement can be used as a light sensor LR (see FIG. 2).
Durch die Erfassung und Auswertung der Spannungen der einzelnen Elemente OD im Array beziehungsweise Matrixarray erhält man ein zweidimensionales Abbild des einfallenden Lichtes. Diese Anordnung kann in Kameras als Bildsensor eingesetzt werden.By recording and evaluating the voltages of the individual elements OD in the array or matrix array, a two-dimensional image of the incident light is obtained. This arrangement can be used in cameras as an image sensor.
In Figur 3 ist das OLED-Displayelement OD einerseits mit einer Ansteuerelektronik AS und andererseits mit einer Auswerteelektronik AW verbunden. Die Ansteuerelektronik AS ist mit einem ersten Bildspeicher BS1 und die Auswerteelektronik AW ist mit einem zweiten Bildspeicher BS2 verbunden. DieseIn FIG. 3, the OLED display element OD is connected on the one hand to control electronics AS and on the other hand to evaluation electronics AW. The control electronics AS is connected to a first image memory BS1 and the evaluation electronics AW is connected to a second image memory BS2. This
Schaltung ist zur alternativen Ansteuerung des Displayelements OD als Anzeige- oder Aufnähmeelement (Bildsensor BR) vorgesehen.Circuit is provided for alternative control of the display element OD as a display or recording element (image sensor BR).
Der erfindungsgemäße Bildsensor (BR) , das heisst die matrix- förmige Anordnung der Elemente OD zur Realisierung dieses Sensors, dient zum Einen zur Wiedergabe der im ersten Bildspeicher BS1 gespeicherten Bilder. Zum Anderen dienen die E- lement OD zur Umwandlung eines optischen Bildes in Bilddaten, die dann im zweiten Bildspeicher BS2 abgelegt werden. Ein Bildsensor auf OLED-Basis kann prinzipiell überall dort eingesetzt werden, wo Bildsensoren auf metallischer Halbleiterbasis eingesetzt werden, wie beispielsweise Fotoapparaten, Camcordern, Videophonen und Scannern. Die Vorteile von OLED- Sensoren liegen in den günstigen Fertigungs- und Herstellkosten.The image sensor (BR) according to the invention, that is to say the matrix-shaped arrangement of the elements OD for realizing this sensor, serves on the one hand to reproduce the images stored in the first image memory BS1. On the other hand, the elements OD serve to convert an optical image into image data, which are then stored in the second image memory BS2. In principle, an OLED-based image sensor can be used wherever image sensors based on metallic semiconductors are used, such as cameras, camcorders, videophones and scanners. The advantages of OLED sensors are the low manufacturing and manufacturing costs.
In Figur 4 ist eine Anordnung eines miniaturisierten Bildaufnahme-Wiedergabegerätes in einem Gehäuse GH dargestellt. Das Gehäuse GH weist eine Eingangsöffnung mit einem Objektiv OT auf, wobei das von einem Objekt OB einfallende" Licht auf den erfindungsgemäßen Bildsensor BR mit einer OLED-Zellenstruktur fällt. Bei der in Figur 4 ebenfalls dargestellten zweiten Variante fungiert das als Bildsensor verwendete OLED-Display als herkömmliche Anzeigeeinrichtung AE. Das von der Anzeigeeinrichtung AE abgegebene Licht tritt über das Objektiv OT aus dem Gehäuse GH aus und kann von einem Betrachter BT wahrgenommen werden. Die in einem solchen Gerät vorgesehene Ansteuer- und Ausleseeinheit ist hierbei nicht detailliert eingezeichnet.FIG. 4 shows an arrangement of a miniaturized image recording / reproduction device in a housing GH. The housing GH has an input opening with an objective OT, the "light incident from an object OB falling on the image sensor BR according to the invention with an OLED cell structure. In the second variant, likewise shown in FIG. 4, the OLED display used as the image sensor functions As a conventional display device AE, the light emitted by the display device AE emerges from the housing GH via the lens OT and can be perceived by a viewer BT The control and readout unit provided in such a device is not shown in detail here.
Figur 5 zeigt eine ähnliche Anordnung, bei der das OLED-Array OD als Direktsicht-Display an der Geräteoberfläche des Gehäuses GH angeordnet ist. Der Bildaufnahmevorgang ist hier ana- log zu dem in Figur 4 dargestellten Fall. Da das OLED-Array OD als Bildsensor BR aber an der Oberfläche des Gehäuses GH angeordnet ist, ist er während des AufnähmeVorgangs mit einer Klappe KP abdeckbar. Bei der Bildwiedergabe blickt der Betrachter BT direkt auf OLED-Array OD, der dann als Anzeigeein- richtung AE arbeitet. BezugszeichenlisteFIG. 5 shows a similar arrangement, in which the OLED array OD is arranged as a direct view display on the device surface of the housing GH. The image acquisition process is analogous to the case shown in FIG. 4. However, since the OLED array OD is arranged as an image sensor BR on the surface of the housing GH, it can be covered with a flap KP during the recording process. When viewing the image, the viewer BT looks directly at the OLED array OD, which then works as a display device AE. LIST OF REFERENCE NUMBERS
OD OLED-DisplayelementOD OLED display element
LR Lichtsensor B BatterieLR light sensor B battery
K KathodeK cathode
A AnodeA anode
TE Transportschicht für ElektronenTE transport layer for electrons
TL TransportSchicht für "Löcher" RK RekombinationsschichtTL transport layer for "holes" RK recombination layer
BSl, BS2 BildspeicherBSl, BS2 image memory
AS AnsteuerelektronikAS control electronics
AW AuswerteelektronikAW evaluation electronics
OB Obj ekt GH GehäuseOB Obj ekt GH housing
OT ObjektivOT lens
BR BildsensorBR image sensor
AE AnzeigeeinrichtungAE display device
BT Betrachter KP Klappe BT viewer KP flap

Claims

Patentansprüche claims
1. Lichtsensor (LR) zur Umwandlung von Licht in ein elektrisches Signal g e k e n n z e i c h n e t durch eine OLED-Zellenstruktur zur Umwandlung.1. Light sensor (LR) for converting light into an electrical signal g e k e n n e e c h e n t by an OLED cell structure for conversion.
2. Bildsensor (BR) zur Umwandlung eines optischen Bildes in Bilddaten, g e k e n n z e i c h n e t durch eine OLED-Zellenstruktur zur Umwandlung.2. Image sensor (BR) for converting an optical image into image data, obtained from an OLED cell structure for conversion.
3. Bildaufnahme- und -wiedergabegerät g e k e n n z e i c h n e t durch einen Bildsensor (BR) gemäß Anspruch 2, zur Aufnahme von Bildern.3. Image recording and reproducing device g e k e n n e e c h n e t by an image sensor (BR) according to claim 2, for recording images.
4. Bildaufnahme- und -wiedergabegerät nach Anspruch 3, g e k e n n z e i c h n e t durch einen Bildsensor (BR) zur alternativen Aufnahme und Wiedergabe von Bildern. 4. image recording and playback device according to claim 3, g e k e n n z e i c h n e t by an image sensor (BR) for alternative recording and playback of images.
PCT/DE2000/003429 2000-09-28 2000-09-28 Image sensor with a cell structure of organic semiconductors WO2002027811A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10359881A1 (en) * 2003-12-12 2005-07-14 Samsung SDI Co., Ltd., Suwon Organic light emitting diode (OLED) component e.g. for surface display, has current flow through OLED-component measured

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504323A (en) * 1993-12-07 1996-04-02 The Regents Of The University Of California Dual function conducting polymer diodes
WO1999039395A1 (en) * 1998-02-02 1999-08-05 Uniax Corporation Organic diodes with switchable photosensitivity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504323A (en) * 1993-12-07 1996-04-02 The Regents Of The University Of California Dual function conducting polymer diodes
WO1999039395A1 (en) * 1998-02-02 1999-08-05 Uniax Corporation Organic diodes with switchable photosensitivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10359881A1 (en) * 2003-12-12 2005-07-14 Samsung SDI Co., Ltd., Suwon Organic light emitting diode (OLED) component e.g. for surface display, has current flow through OLED-component measured

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