WO2002023598A3 - A method to reduce post-development defects without sacrificing throughput - Google Patents

A method to reduce post-development defects without sacrificing throughput Download PDF

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Publication number
WO2002023598A3
WO2002023598A3 PCT/US2001/042148 US0142148W WO0223598A3 WO 2002023598 A3 WO2002023598 A3 WO 2002023598A3 US 0142148 W US0142148 W US 0142148W WO 0223598 A3 WO0223598 A3 WO 0223598A3
Authority
WO
WIPO (PCT)
Prior art keywords
development defects
resist
reduce post
sacrificing throughput
defects
Prior art date
Application number
PCT/US2001/042148
Other languages
French (fr)
Other versions
WO2002023598A2 (en
Inventor
Zhijian Lu
Wayne Moreau
Kuang Jung Chen
George Mack
Original Assignee
Infineon Technologies Corp
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Corp, Ibm filed Critical Infineon Technologies Corp
Publication of WO2002023598A2 publication Critical patent/WO2002023598A2/en
Publication of WO2002023598A3 publication Critical patent/WO2002023598A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
    • C11D1/146—Sulfuric acid esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Post-development defects in the manufacture of semiconductor devices through the use of surfactants, suchas ammonium lauryl sulfate, incorporated in the rinse water or the developer for the resist. The surfactants effectively remove resist defects in or around the resist pattern without attacking the resist itself.
PCT/US2001/042148 2000-09-15 2001-09-14 A method to reduce post-development defects without sacrificing throughput WO2002023598A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66268400A 2000-09-15 2000-09-15
US09/662,684 2000-09-15

Publications (2)

Publication Number Publication Date
WO2002023598A2 WO2002023598A2 (en) 2002-03-21
WO2002023598A3 true WO2002023598A3 (en) 2002-06-13

Family

ID=24658747

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/042148 WO2002023598A2 (en) 2000-09-15 2001-09-14 A method to reduce post-development defects without sacrificing throughput

Country Status (1)

Country Link
WO (1) WO2002023598A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521405B2 (en) 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7348300B2 (en) 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
JP5624753B2 (en) * 2009-03-31 2014-11-12 東京応化工業株式会社 Lithographic cleaning liquid and resist pattern forming method using the same
KR101957875B1 (en) * 2018-06-14 2019-03-13 영창케미칼 주식회사 Process liquid composition for extreme ultraviolet lithography and the method for forming pattern using the same

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613561A (en) * 1984-10-17 1986-09-23 James Marvin Lewis Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution
US4824769A (en) * 1984-10-15 1989-04-25 Allied Corporation High contrast photoresist developer
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level
US5543268A (en) * 1992-05-14 1996-08-06 Tokyo Ohka Kogyo Co., Ltd. Developer solution for actinic ray-sensitive resist
US5731132A (en) * 1994-06-01 1998-03-24 Clariant Gmbh Metal-ion free, aqueous developer for photoresist layers
US5741628A (en) * 1994-07-05 1998-04-21 Matsushita Electric Industrial Co., Ltd. Method of forming micropatterns by having a resist film absorb water
WO1999053381A1 (en) * 1998-04-15 1999-10-21 Etec Systems, Inc. Photoresist developer and method of development
US5977041A (en) * 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
EP0852743B1 (en) * 1995-09-26 1999-11-17 Clariant Finance (BVI) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
WO2001063365A1 (en) * 2000-02-26 2001-08-30 Shipley Company, L.L.C. Method of reducing defects

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824769A (en) * 1984-10-15 1989-04-25 Allied Corporation High contrast photoresist developer
US4613561A (en) * 1984-10-17 1986-09-23 James Marvin Lewis Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
US5543268A (en) * 1992-05-14 1996-08-06 Tokyo Ohka Kogyo Co., Ltd. Developer solution for actinic ray-sensitive resist
US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level
US5731132A (en) * 1994-06-01 1998-03-24 Clariant Gmbh Metal-ion free, aqueous developer for photoresist layers
US5741628A (en) * 1994-07-05 1998-04-21 Matsushita Electric Industrial Co., Ltd. Method of forming micropatterns by having a resist film absorb water
EP0852743B1 (en) * 1995-09-26 1999-11-17 Clariant Finance (BVI) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5977041A (en) * 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
WO1999053381A1 (en) * 1998-04-15 1999-10-21 Etec Systems, Inc. Photoresist developer and method of development
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
WO2001063365A1 (en) * 2000-02-26 2001-08-30 Shipley Company, L.L.C. Method of reducing defects

Also Published As

Publication number Publication date
WO2002023598A2 (en) 2002-03-21

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