WO2002021594A3 - Improved chip crack stop design for semiconductor chips - Google Patents

Improved chip crack stop design for semiconductor chips Download PDF

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Publication number
WO2002021594A3
WO2002021594A3 PCT/US2001/027135 US0127135W WO0221594A3 WO 2002021594 A3 WO2002021594 A3 WO 2002021594A3 US 0127135 W US0127135 W US 0127135W WO 0221594 A3 WO0221594 A3 WO 0221594A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive line
semiconductor chips
crack stop
stop design
contacts
Prior art date
Application number
PCT/US2001/027135
Other languages
French (fr)
Other versions
WO2002021594A2 (en
Inventor
Axel Brintzinger
Original Assignee
Infineon Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24628978&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2002021594(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Infineon Technologies Corp filed Critical Infineon Technologies Corp
Priority to KR10-2003-7003218A priority Critical patent/KR100479298B1/en
Priority to EP01968327A priority patent/EP1316112B1/en
Priority to DE60126960T priority patent/DE60126960T2/en
Publication of WO2002021594A2 publication Critical patent/WO2002021594A2/en
Publication of WO2002021594A3 publication Critical patent/WO2002021594A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

A semiconductor chip (100), in accordance with the present invention, includes a substrate (102) and a crack stop structure (300). The crack structure includes a first conductive line (108) disposed over the substrate and at least two first contacts (104) connected to the substrate and to the first conductive line. The at least two first contacts are spaced apart from each other and extend longitudinally along a length of the first conductive line. A second conductive line (112) is disposed over a portion of the first conductive line, and at least two second contacts (116) are connected to the first conductive line and the second conductive line. The at least two second contacts are spaced apart from each other and extend longitudinally along a length of the second conductive line.
PCT/US2001/027135 2000-09-05 2001-08-30 Improved chip crack stop design for semiconductor chips WO2002021594A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2003-7003218A KR100479298B1 (en) 2000-09-05 2001-08-30 Improved chip crack stop design for semiconductor chips
EP01968327A EP1316112B1 (en) 2000-09-05 2001-08-30 Improved chip crack stop design for semiconductor chips
DE60126960T DE60126960T2 (en) 2000-09-05 2001-08-30 IMPROVED RIP INTERRUPTER FOR SEMICONDUCTOR CHIPS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/655,461 US6495918B1 (en) 2000-09-05 2000-09-05 Chip crack stop design for semiconductor chips
US09/655,461 2000-09-05

Publications (2)

Publication Number Publication Date
WO2002021594A2 WO2002021594A2 (en) 2002-03-14
WO2002021594A3 true WO2002021594A3 (en) 2002-05-16

Family

ID=24628978

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/027135 WO2002021594A2 (en) 2000-09-05 2001-08-30 Improved chip crack stop design for semiconductor chips

Country Status (5)

Country Link
US (1) US6495918B1 (en)
EP (1) EP1316112B1 (en)
KR (1) KR100479298B1 (en)
DE (1) DE60126960T2 (en)
WO (1) WO2002021594A2 (en)

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US6774039B1 (en) * 2002-08-08 2004-08-10 Novellus Systems, Inc. Process scheme for improving electroplating performance in integrated circuit manufacture
US6621167B1 (en) * 2002-09-23 2003-09-16 United Microelectronics Corp. Metal interconnect structure
US6919639B2 (en) * 2002-10-15 2005-07-19 The Board Of Regents, The University Of Texas System Multiple copper vias for integrated circuit metallization and methods of fabricating same
US7372153B2 (en) * 2003-10-07 2008-05-13 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit package bond pad having plurality of conductive members
US7038280B2 (en) * 2003-10-28 2006-05-02 Analog Devices, Inc. Integrated circuit bond pad structures and methods of making
TWI227936B (en) * 2004-01-14 2005-02-11 Taiwan Semiconductor Mfg Sealed ring for IC protection
US7071575B2 (en) * 2004-11-10 2006-07-04 United Microelectronics Corp. Semiconductor chip capable of implementing wire bonding over active circuits
US20060103023A1 (en) * 2004-11-12 2006-05-18 International Business Machines Corporation Methods for incorporating high k dielectric materials for enhanced SRAM operation and structures produced thereby
US7274108B2 (en) * 2004-11-15 2007-09-25 United Microelectronics Corp. Semiconductor chip capable of implementing wire bonding over active circuits
US7741715B2 (en) * 2005-03-14 2010-06-22 Infineon Technologies Ag Crack stop and moisture barrier
US7479447B2 (en) * 2005-04-04 2009-01-20 International Business Machines Corporation Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
US7572738B2 (en) * 2005-05-23 2009-08-11 Sony Corporation Crack stop trenches in multi-layered low-k semiconductor devices
KR100781850B1 (en) * 2005-07-20 2007-12-03 주식회사 하이닉스반도체 Semiconductor device and method for manufacturing the same
US8624346B2 (en) 2005-10-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Exclusion zone for stress-sensitive circuit design
US20070102792A1 (en) * 2005-11-07 2007-05-10 Ping-Chang Wu Multi-layer crack stop structure
KR100771378B1 (en) * 2006-12-22 2007-10-30 동부일렉트로닉스 주식회사 Semiconductor device and method for fabricating the same
US7692274B2 (en) * 2007-01-04 2010-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reinforced semiconductor structures
US7952167B2 (en) * 2007-04-27 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line layout design
DE102007063839B9 (en) * 2007-04-30 2016-06-30 Infineon Technologies Ag Verkrallungsstruktur
US9076821B2 (en) 2007-04-30 2015-07-07 Infineon Technologies Ag Anchoring structure and intermeshing structure
US8125052B2 (en) * 2007-05-14 2012-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure with improved cracking protection
US8643147B2 (en) * 2007-11-01 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Seal ring structure with improved cracking protection and reduced problems
US7704804B2 (en) 2007-12-10 2010-04-27 International Business Machines Corporation Method of forming a crack stop laser fuse with fixed passivation layer coverage
US8008750B2 (en) * 2008-02-01 2011-08-30 Infineon Technologies Ag Crack stops for semiconductor devices
US7871902B2 (en) * 2008-02-13 2011-01-18 Infineon Technologies Ag Crack stop trenches
US8334582B2 (en) * 2008-06-26 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protective seal ring for preventing die-saw induced stress
US8576537B2 (en) * 2008-10-17 2013-11-05 Kemet Electronics Corporation Capacitor comprising flex crack mitigation voids
US7906836B2 (en) 2008-11-14 2011-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Heat spreader structures in scribe lines
US8581423B2 (en) * 2008-11-17 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Double solid metal pad with reduced area
US20100127937A1 (en) 2008-11-25 2010-05-27 Qualcomm Incorporated Antenna Integrated in a Semiconductor Chip
KR20100064602A (en) * 2008-12-05 2010-06-15 삼성전자주식회사 Semiconductor have labyrinthine crack stopper layer structure and method for manufacturing the same
US8048761B2 (en) * 2009-02-17 2011-11-01 Globalfoundries Singapore Pte. Ltd. Fabricating method for crack stop structure enhancement of integrated circuit seal ring
US8368180B2 (en) * 2009-02-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line metal structure
US7892926B2 (en) * 2009-07-24 2011-02-22 International Business Machines Corporation Fuse link structures using film stress for programming and methods of manufacture
US8592941B2 (en) 2010-07-19 2013-11-26 International Business Machines Corporation Fuse structure having crack stop void, method for forming and programming same, and design structure
US9093411B2 (en) * 2010-10-19 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure having contact bars extending into substrate and wafer having the pad structure
US8604618B2 (en) 2011-09-22 2013-12-10 International Business Machines Corporation Structure and method for reducing vertical crack propagation
US8742594B2 (en) 2012-09-14 2014-06-03 International Business Machines Corporation Structure and method of making an offset-trench crackstop that forms an air gap adjacent to a passivated metal crackstop
US8970008B2 (en) 2013-03-14 2015-03-03 Infineon Technologies Ag Wafer and integrated circuit chip having a crack stop structure
KR102276546B1 (en) * 2014-12-16 2021-07-13 삼성전자주식회사 Moisture blocking structure and/or guard ring, semiconductor device including the same, and method of manufacturing the same
US10153232B2 (en) 2017-04-26 2018-12-11 Globalfoundries Inc. Crack stop with overlapping vias
US10090258B1 (en) 2017-09-25 2018-10-02 Globalfoundries Inc. Crack-stop structure for an IC product and methods of making such a crack-stop structure
KR102546684B1 (en) 2017-11-29 2023-06-23 삼성전자주식회사 Semiconductor device and semiconductor wafer including the same, and semiconductor package
US11049820B2 (en) * 2018-07-30 2021-06-29 Texas Instruments Incorporated Crack suppression structure for HV isolation component
US10636750B1 (en) 2018-10-15 2020-04-28 International Business Machines Corporation Step pyramid shaped structure to reduce dicing defects
US11037873B2 (en) 2019-06-03 2021-06-15 Marvell Government Solutions, Llc. Hermetic barrier for semiconductor device
CN112530982B (en) * 2019-09-19 2022-11-22 中芯国际集成电路制造(北京)有限公司 CMOS image sensor, edge sealing ring structure and forming method thereof
JP7428051B2 (en) * 2020-03-31 2024-02-06 住友大阪セメント株式会社 Optical waveguide device and optical modulation device and optical transmitter using the same
US11308257B1 (en) 2020-12-15 2022-04-19 International Business Machines Corporation Stacked via rivets in chip hotspots

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EP0538619A1 (en) * 1991-10-22 1993-04-28 Mitsubishi Denki Kabushiki Kaisha Multilayer conductive wire for semiconductor device and manufacturing method thereof
EP0605806A2 (en) * 1992-12-29 1994-07-13 International Business Machines Corporation Process for producing crackstops on semiconductor devices and devices containing the crackstops
EP0828288A2 (en) * 1996-09-05 1998-03-11 International Business Machines Corporation Energy relieving crack stop
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US6261945B1 (en) * 2000-02-10 2001-07-17 International Business Machines Corporation Crackstop and oxygen barrier for low-K dielectric integrated circuits

Also Published As

Publication number Publication date
DE60126960D1 (en) 2007-04-12
KR20030038728A (en) 2003-05-16
DE60126960T2 (en) 2007-11-22
WO2002021594A2 (en) 2002-03-14
EP1316112A2 (en) 2003-06-04
US6495918B1 (en) 2002-12-17
EP1316112B1 (en) 2007-02-28
KR100479298B1 (en) 2005-03-29

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