WO2002009200A1 - Enhanced light-emitting diode - Google Patents

Enhanced light-emitting diode Download PDF

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Publication number
WO2002009200A1
WO2002009200A1 PCT/US2001/023359 US0123359W WO0209200A1 WO 2002009200 A1 WO2002009200 A1 WO 2002009200A1 US 0123359 W US0123359 W US 0123359W WO 0209200 A1 WO0209200 A1 WO 0209200A1
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WO
WIPO (PCT)
Prior art keywords
layer
window
algalnp
doped
comprised
Prior art date
Application number
PCT/US2001/023359
Other languages
French (fr)
Inventor
John Chen
Bingwen Liang
Robert Shih
Original Assignee
American Xtal Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Xtal Technology, Inc. filed Critical American Xtal Technology, Inc.
Priority to ES01954944.3T priority Critical patent/ES2524298T3/en
Priority to EP01954944.3A priority patent/EP1320899B1/en
Priority to AU2001277158A priority patent/AU2001277158A1/en
Priority to CA002412421A priority patent/CA2412421C/en
Publication of WO2002009200A1 publication Critical patent/WO2002009200A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system

Definitions

  • This invention relates to light-emitting diodes formed of AlGalnP compounds.
  • a semiconductor light-emitting diode comprises: a substrate; a light emitting structure; and a pair of electrical contacts for powering the diode, i.e., a substrate contact and a window contact.
  • the substrate may be transparent or opaque; and the "substrate" contact, is formed on a surface thereof.
  • the window contact is formed on a window surface.
  • LED structures composed of AlGalnP compounds can be designed to emit any selected one of a range of colors by tailoring the amount of Al in the compound.
  • the substrate and lower cladding layer are of n type AlGalnP compounds, it is difficult to achieve a low resistance p type AlGalnP compound for the upper cladding layer.
  • a relatively high resistance upper cladding layer does not provide full use of the surface of the light emitting structure. That is, current flowing between the window and substrate -contacts tends to concentrate in a narrow "favored" path, which lies directly under the window contact. Thus, only that portion of the light emitting surface which lies in the favored path is activated.
  • a number of prior art arrangements provide a "window" which is interposed between the light emitting structure and the window contact to more fully utilize the light emitting surface.
  • the prior art windows range from a single thick layer of compounds other than AlGalnP to a variety of multi layer structures which "spread" the energizing current across the face of the light emitting surfaces.
  • Light generated by an LED exits directly from the outer face of the light emitting surface or via the window.
  • the “window” contact is formed on the outer blocks emission of light generated directly thereunder. For example, in the case of an LED having a 10 mil by 10 mil square window, a four mil round metal contact will obscure about 12.2 % of the window surface.
  • the window contact cannot be measurably reduced in diameter, since the contact must be large enough to insure its adhesion to the window surface.
  • Our semiconductor light-emitting diodes comprise: a substrate; a substrate electrical contact; a light emitting structure; and an improved window.
  • Our window interfaces directly with the light emitting structure; and, in the following stated order comprises: a lightly doped p GaP layer; a low resistance p GaAs layer; a transparent, amorphous conducting window layer, and a metal window contact.
  • the conducting layer may be formed of: Indium Tin Oxide (ITO); Tin Oxide (TO) or Zinc Oxide (ZnO). Layers of other amorphous, conductive and transparent oxide compounds also may be suitable for construction of the window layer.
  • the metal contact passes through both the conducting layer and the GaAs layer to: (a) form an ohmic contact with those layers and (b) contact the GaP layer and form a Shottky diode connection therewith.
  • the metal contact passes only through the conducting layer and it contacts an insulator which is formed in the GaAs layer to isolate the metal contact from the GaP layer.
  • the metal window contact forms an ohmic contact with the conducting layer and the GaAs layer.
  • the current path lying directly under the metal contact is eliminated and the current is widely spread over the face of the light emitting structure.
  • all of the diode, other than: the metal contacts, and the conducting layer is grown in a continuous process.
  • FIGS. 1 A and IB are top and side views of a prior art LED
  • FIGS. 2 A and 2B are top and side views of a first embodiment of an LED in accordance with the present invention.
  • Fig. 3 is a side view of a second embodiment of an LED in accordance with the present invention. DETAILED DESCRIPTION
  • the top view representations of Figs. 1A and 2 A are drawn to scale; however the side view representations of Figs. IB and 2B are not to scale.
  • the top view of Figure 1A represents an LED having a 10 mil by 10 mil square window 105 with a 4 mil circular metal contact 105.
  • the window contact is gold.
  • the prior art LED of Fig. IB comprises a metal substrate contact 101, an "n" GaAs substrate 102, an "n" cladding layer 103; an active region 104; a p cladding layer 105; and a metal window contact 106.
  • current which flows between the window contact 106 and the substrate contact 101 concentrates in a "favored" path directly under the window contact 101.
  • FIG. 2A represents an LED having a 10 mil by 10 mil square amorphous transparent layer 209 surrounding a 5 mil circular metal contact 210.
  • elements 201 through 206 form a light emitting diode; and the first embodiment of our improved window comprises elements 207 through 210.
  • the elements 203 through 208 are grown in sequence upon substrate 202 which is a single crystal n doped GaAs wafer.
  • Element 203 is an optional Distributed Bragg Reflector (DBR); layer 204 is an n AlGalnP lower cladding layer; element 205 is an active region; layer 206 is a p AlGalnP upper cladding layer; 207 is a lightly doped p GaP first window layer; 5 208 is a low resistance p GaAs second window layer; 209 is an amorphous, transparent conducting layer; and 210 is a metal window contact.
  • DBR Distributed Bragg Reflector
  • layers 207 through 209, and contact 210 form our improved window.
  • First window layer 207 is formed of p doped GaP.
  • Second window 0 layer 208 is formed of p doped GaAs.
  • Layer 209 is formed of an amorphous conducting material having a thickness of 100 to 1,000 nm; and window contact 210 is formed of gold or of a gold compound.
  • the conducting layer may be formed of: Indium Tin Oxide (ITO); Tin Oxide (TO) or Zinc Oxide (ZnO).
  • Contact 210 may be formed of Ti ⁇ Au. 5 Layers 203 through 208 are grown in a continuous MOCND process.
  • the reactor temperature is then reduced to a value below the growth temperature and the flow of the growth gases is stopped.
  • the remaining cool down of the reactor to room 0 temperature includes a period of annealing of the GaAs layer 208 at a temperature of about 600 degrees C. This avoids passivation of the p dopant in layer 208.
  • the completed wafer, as formed above, is removed from the MOCND reactor and completion of the remainder of the LED of Fig. 2b is implemented as follows.
  • the amorphous conducting layer e.g. ITO, is installed by sputtering on 5 top of the second layer 208.
  • a hole is etched through layers 209 and 208 to reach layer 207.
  • a titanium ⁇ gold compound is then evaporated into the resulting void and over layer 209 as illustrated in Fig. 2B.
  • the interface between contact 210 and the lightly doper GaP layer 207 forms a Shottky diode.
  • the Shottky 0 diode inhibits flow of energizing current directly from contact 210 to layer 207.
  • Our enhanced window structure of Fig. 2B eliminates the favored current path through the LED directly under the window contact 210; and widely distributes the energizing current quite evenly over a substantial portion of the face of the active layer. Accordingly, the light emitted through the window is increased without increasing either the surface area of the active layer; or the energizing current requirements.
  • Fig. 3 illustrates schematically the second embodiment of our improved window. Those elements of Fig. 3 which are unchanged from Fig. 2B retain the numbers of Fig. 2.
  • Our window of Fig. 3 further includes insulator 311 which is formed in layer 208 after a hole has been etched in the amorphous layer 209 and in the GaAs layer 208. Insulator 211 is formed by evaporation of Silicon Oxide. The thickness of the insulator may be equal to, or slightly greater than, the thickness of layer 208.
  • a titanium ⁇ gold metal contact 210 is evaporated in the unfilled portion hole and on top of amorphous layer 209.
  • the metal window contact 210 forms an ohmic connection with amorphous layer 209 and is insulated from the first layer 207.
  • This second embodiment serves to eliminate the favorite current path under the window contact 210 and widely spreads the energizing current across the surface of active layer 205.
  • Our window structures can be used with any LED composed of AlGalnP compounds without limitation of the form of the light emitting structure; and with or without the optional Distributed Bragg Reflector.

Abstract

A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer (207) formed of p doped GaP; a low impedance second layer (208) formed of p GaAs; an amorphous conducting layer (209) formed of Indium Tin Oxide (ITO), and a titanium/gold contact (210). In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer, and is insulated from direct contact with the first layer.

Description

TITLE
Enhanced Light-emitting diode
TECHNICAL FIELD This invention relates to light-emitting diodes formed of AlGalnP compounds.
BACKGROUND OF THE INVENTION
A semiconductor light-emitting diode comprises: a substrate; a light emitting structure; and a pair of electrical contacts for powering the diode, i.e., a substrate contact and a window contact. The substrate may be transparent or opaque; and the "substrate" contact, is formed on a surface thereof. The window contact is formed on a window surface.
LED structures composed of AlGalnP compounds can be designed to emit any selected one of a range of colors by tailoring the amount of Al in the compound. However, where the substrate and lower cladding layer are of n type AlGalnP compounds, it is difficult to achieve a low resistance p type AlGalnP compound for the upper cladding layer. Unfortunately, a relatively high resistance upper cladding layer does not provide full use of the surface of the light emitting structure. That is, current flowing between the window and substrate -contacts tends to concentrate in a narrow "favored" path, which lies directly under the window contact. Thus, only that portion of the light emitting surface which lies in the favored path is activated.
A number of prior art arrangements provide a "window" which is interposed between the light emitting structure and the window contact to more fully utilize the light emitting surface. The prior art windows range from a single thick layer of compounds other than AlGalnP to a variety of multi layer structures which "spread" the energizing current across the face of the light emitting surfaces. Light generated by an LED exits directly from the outer face of the light emitting surface or via the window. The "window" contact is formed on the outer blocks emission of light generated directly thereunder. For example, in the case of an LED having a 10 mil by 10 mil square window, a four mil round metal contact will obscure about 12.2 % of the window surface. However, the window contact cannot be measurably reduced in diameter, since the contact must be large enough to insure its adhesion to the window surface.
DISCLOSURE OF THE INVENTION Our semiconductor light-emitting diodes comprise: a substrate; a substrate electrical contact; a light emitting structure; and an improved window. Our window interfaces directly with the light emitting structure; and, in the following stated order comprises: a lightly doped p GaP layer; a low resistance p GaAs layer; a transparent, amorphous conducting window layer, and a metal window contact. The conducting layer, by way of example, may be formed of: Indium Tin Oxide (ITO); Tin Oxide (TO) or Zinc Oxide (ZnO). Layers of other amorphous, conductive and transparent oxide compounds also may be suitable for construction of the window layer.
In a first embodiment of our invention, the metal contact passes through both the conducting layer and the GaAs layer to: (a) form an ohmic contact with those layers and (b) contact the GaP layer and form a Shottky diode connection therewith. In a second embodiment of our invention, the metal contact passes only through the conducting layer and it contacts an insulator which is formed in the GaAs layer to isolate the metal contact from the GaP layer. As in our first embodiment, the metal window contact forms an ohmic contact with the conducting layer and the GaAs layer. Advantageously, in both embodiments, the current path lying directly under the metal contact is eliminated and the current is widely spread over the face of the light emitting structure.
With elimination of the "favored" path, less light is generated from the portion of the diode interface which is directly under the window contact; and more light is generated from the remaining surface of that interface. The net result being an increase in the total light emitted through the window layer. Advantageously, in accordance with this invention, all of the diode, other than: the metal contacts, and the conducting layer, is grown in a continuous process.
BRIEF DESCRIPTION OF THE DRAWING FIGS. 1 A and IB are top and side views of a prior art LED;
FIGS. 2 A and 2B are top and side views of a first embodiment of an LED in accordance with the present invention;
Fig. 3 is a side view of a second embodiment of an LED in accordance with the present invention; DETAILED DESCRIPTION
The top view representations of Figs. 1A and 2 A are drawn to scale; however the side view representations of Figs. IB and 2B are not to scale. The top view of Figure 1A represents an LED having a 10 mil by 10 mil square window 105 with a 4 mil circular metal contact 105. Typically, the window contact is gold. The prior art LED of Fig. IB comprises a metal substrate contact 101, an "n" GaAs substrate 102, an "n" cladding layer 103; an active region 104; a p cladding layer 105; and a metal window contact 106. As explained earlier herein, current which flows between the window contact 106 and the substrate contact 101 concentrates in a "favored" path directly under the window contact 101. Since, only a small area of the active layer lies in that current path, much of the light emitting potential of the LED is dormant. Additionally, most of the light emitted through layer 105 is intercepted by the opaque contact 106. It has been observed that, under the stated conditions, the light which is emitted by the LED appears as a thin halo surrounding contact 106. A first embodiment of our improved LED is illustrated schematically in
Figs. 2A and 2B. The top view of Figure 2A represents an LED having a 10 mil by 10 mil square amorphous transparent layer 209 surrounding a 5 mil circular metal contact 210.
In Fig. 2B, elements 201 through 206 form a light emitting diode; and the first embodiment of our improved window comprises elements 207 through 210. In the example of Fig. 2B, the elements 203 through 208 are grown in sequence upon substrate 202 which is a single crystal n doped GaAs wafer. Element 203 is an optional Distributed Bragg Reflector (DBR); layer 204 is an n AlGalnP lower cladding layer; element 205 is an active region; layer 206 is a p AlGalnP upper cladding layer; 207 is a lightly doped p GaP first window layer; 5 208 is a low resistance p GaAs second window layer; 209 is an amorphous, transparent conducting layer; and 210 is a metal window contact.
In this first embodiment of our invention, layers 207 through 209, and contact 210 form our improved window.
First window layer 207 is formed of p doped GaP. Second window 0 layer 208 is formed of p doped GaAs. Layer 209 is formed of an amorphous conducting material having a thickness of 100 to 1,000 nm; and window contact 210 is formed of gold or of a gold compound. The conducting layer may be formed of: Indium Tin Oxide (ITO); Tin Oxide (TO) or Zinc Oxide (ZnO). Contact 210 may be formed of Ti\Au. 5 Layers 203 through 208 are grown in a continuous MOCND process.
After such growth is completed, hydrogen carrier gas flow is terminated, and flowing molecular nitrogen gas is introduced into the reactor. The reactor temperature is then reduced to a value below the growth temperature and the flow of the growth gases is stopped. The remaining cool down of the reactor to room 0 temperature includes a period of annealing of the GaAs layer 208 at a temperature of about 600 degrees C. This avoids passivation of the p dopant in layer 208. The completed wafer, as formed above, is removed from the MOCND reactor and completion of the remainder of the LED of Fig. 2b is implemented as follows. The amorphous conducting layer, e.g. ITO, is installed by sputtering on 5 top of the second layer 208. A hole is etched through layers 209 and 208 to reach layer 207. A titaniumλgold compound is then evaporated into the resulting void and over layer 209 as illustrated in Fig. 2B. In this first embodiment, the interface between contact 210 and the lightly doper GaP layer 207 forms a Shottky diode. Thus, with the low operating voltage applied to contacts 201 and 210, the Shottky 0 diode inhibits flow of energizing current directly from contact 210 to layer 207. Our enhanced window structure of Fig. 2B, eliminates the favored current path through the LED directly under the window contact 210; and widely distributes the energizing current quite evenly over a substantial portion of the face of the active layer. Accordingly, the light emitted through the window is increased without increasing either the surface area of the active layer; or the energizing current requirements.
Fig. 3 illustrates schematically the second embodiment of our improved window. Those elements of Fig. 3 which are unchanged from Fig. 2B retain the numbers of Fig. 2. Our window of Fig. 3 further includes insulator 311 which is formed in layer 208 after a hole has been etched in the amorphous layer 209 and in the GaAs layer 208. Insulator 211 is formed by evaporation of Silicon Oxide. The thickness of the insulator may be equal to, or slightly greater than, the thickness of layer 208. As in the production of our window of Figs. 2a and 2b, a titanium\gold metal contact 210 is evaporated in the unfilled portion hole and on top of amorphous layer 209. In this second embodiment, the metal window contact 210 forms an ohmic connection with amorphous layer 209 and is insulated from the first layer 207. This second embodiment serves to eliminate the favorite current path under the window contact 210 and widely spreads the energizing current across the surface of active layer 205.
Our window structures can be used with any LED composed of AlGalnP compounds without limitation of the form of the light emitting structure; and with or without the optional Distributed Bragg Reflector.
The invention has been described with particular attention to its preferred embodiment; however, it should be understood that variations and modifications within the spirit and scope of the invention may occur to those skilled in the art to which the invention pertains.

Claims

What is claimed is:
(1) An AlGalnP semiconductor light-emitting diode (LED) assembly comprising: a substrate; a first input terminal electrically coupled to said substrate; a plurality of layers formed on said substrate to form a light-emitting structure; a window structure formed on said light-emitting structure; and a second input terminal; wherein: said window structure comprises: a first layer comprised of lightly doped p semi conductor material other than AlGalnP; a low resistance second layer formed on said first window layer and comprised of p doped semi conductor material other than AlGalnP and different from the material of said first layer; a third layer formed on said second layer and comprised of an amorphous conductive material; and said second input terminal comprises a metal contact which passes through an opening in said second and third ; forms ohmic connections with said layers; and forms a Shottky diode connection with said first layer.
(2) An AlGalnP semiconductor light-emitting diode (LED) assembly in accordance with claim 1 wherein: said first layer is a p doped GaP layer; said second layer is a p doped GaAs layer; said third layer is a layer of Indium Tin Oxide, Tin Oxide, or Zinc Oxide; and said metal window contact is formed of a gold compound.
(3) An AlGalnP semiconductor light-emitting diode (LED) assembly comprising: a substrate; a first input terminal electrically coupled to said substrate; a plurality of layers formed on said substrate to form a light-emitting structure; a window formed on said light-emitting structure; and a second input terminal; wherein: said window comprises: a first layer comprised of lightly doped p semi conductor material other than AlGalnP; a low resistance second layer formed on said first layer and comprised of p doped semi conductor material other than AlGalnP and different from the material of said first layer; a third layer formed on said second layer and comprised of an amorphous conductive material; an insulator formed on said first layer in a void etched in said second layer; and said second input terminal comprises a metal contact which passes through an opening in said third layer to said insulator; and forms an ohmic connection with said third layer.
(4) An AlGalnP semiconductor light-emitting diode (LED) assembly in accordance with claim 3 wherein: said first layer is a p doped GaP layer; said second layer is a p doped GaAs layer; said third layer is a layer of Indium Tin Oxide, Tin Oxide, or Zinc Oxide; and said metal window contact is formed of a gold compound.
(5) A transparent window for an AlGalnP semiconductor light-emitting diode (LED) assembly comprising: a first layer comprised of lightly doped p semi conductor material other than AlGalnP; a low resistance second layer formed on said first layer and comprised of p doped semi conductor material other than AlGalnP and different from the material of said first layer; a third layer formed on said second layer and comprised of an amorphous conductive material; and a metal contact which passes through an opening in said second and third layers to said first layer to form ohmic comiections with said second and third layers and a Shottky diode connection with said first layer.
(6) A transparent window for an AlGalnP semiconductor light-emitting diode (LED) assembly in accordance with claim 5 wherein: said first layer is a p doped GaP layer; said second layer is a p doped GaAs layer; said third layer is a layer of Indium Tin Oxide, Tin Oxide, or Zinc Oxide; and said metal window contact is formed of a gold compound.
(7) A transparent window for an AlGalnP semiconductor light-emitting diode (LED) assembly comprising: a first layer comprised of lightly doped p semi conductor material other than AlGalnP; a low resistance second layer formed on said first layer and comprised of p doped semi conductor material other than AlGalnP and different from the material of said first layer; a third layer formed on said second layer and comprised of an amorphous conductive material; an insulator formed on said first layer in a void etched in said second layer; and a metal contact which passes through an opening in said third window layer to said insulator; and forms an ohmic connection with said third layer.
(8) A transparent window for an AlGalnP semiconductor light-emitting diode (LED) assembly in accordance with claim 7 wherein: said first layer is a p doped GaP layer; said second layer is a p doped GaAs layer; said third layer is a layer of Indium Tin Oxide, Tin Oxide, or Zinc Oxide; and said metal window contact is formed of a gold compound.
PCT/US2001/023359 2000-07-26 2001-07-25 Enhanced light-emitting diode WO2002009200A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ES01954944.3T ES2524298T3 (en) 2000-07-26 2001-07-25 Enhanced Light Emitting Diode
EP01954944.3A EP1320899B1 (en) 2000-07-26 2001-07-25 Enhanced light-emitting diode
AU2001277158A AU2001277158A1 (en) 2000-07-26 2001-07-25 Enhanced light-emitting diode
CA002412421A CA2412421C (en) 2000-07-26 2001-07-25 Enhanced light-emitting diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/626,441 US6459098B1 (en) 2000-07-26 2000-07-26 Window for light emitting diode
US09/626,441 2000-07-26

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US (2) US6459098B1 (en)
EP (1) EP1320899B1 (en)
AU (1) AU2001277158A1 (en)
CA (1) CA2412421C (en)
ES (1) ES2524298T3 (en)
WO (1) WO2002009200A1 (en)

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US6580096B2 (en) 2003-06-17
US6459098B1 (en) 2002-10-01
EP1320899A4 (en) 2007-02-21
CA2412421A1 (en) 2002-01-31
US20020154496A1 (en) 2002-10-24
EP1320899A1 (en) 2003-06-25
ES2524298T3 (en) 2014-12-05
CA2412421C (en) 2006-05-16
AU2001277158A1 (en) 2002-02-05
EP1320899B1 (en) 2014-09-10

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